CN107746271B - AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof - Google Patents
AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof Download PDFInfo
- Publication number
- CN107746271B CN107746271B CN201711013960.1A CN201711013960A CN107746271B CN 107746271 B CN107746271 B CN 107746271B CN 201711013960 A CN201711013960 A CN 201711013960A CN 107746271 B CN107746271 B CN 107746271B
- Authority
- CN
- China
- Prior art keywords
- ceramic material
- low
- dielectric loss
- agta
- titanium dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3289—Noble metal oxides
- C04B2235/3291—Silver oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Abstract
The invention discloses an AgTa co-doped titanium dioxide based dielectric ceramic material with low frequency and low dielectric loss and a preparation method thereof, wherein the general formula of the ceramic material is (Ag)1/4Ta3/4)xTi1‑xO2Wherein x represents a mole fraction, and the value of x is 0.005-0.01. The preparation method of the ceramic material is simple, good in repeatability and high in yield, and the metal element Ag is introduced into the Ta single-doped titanium dioxide-based ceramic material, so that the frequency of the ceramic material is 40-106Has a high dielectric constant (> 10) in the Hz range4) And the low dielectric loss (less than 0.14) especially remarkably reduces the low-frequency dielectric loss of the ceramic material, and is 40-103The dielectric loss in the Hz frequency range is always kept below 0.07, and the high-frequency high-temperature-resistant ceramic capacitor has excellent frequency and temperature stability, is kept between 15 percent below zero and 15 percent above zero, meets the parameter requirements of ceramic capacitors, and has great application value.
Description
Technical Field
The invention belongs to the technical field of ceramic materials, and particularly relates to a titanium dioxide-based dielectric ceramic material with high dielectric constant, low frequency and low dielectric loss and a preparation method thereof.
Background
Dielectric materials are highly functional materials with high technical performance in international competition, and are an important basis for further development of high performance and size miniaturization of important electronic devices such as capacitors, memories, resonators, filters and the like. Due to the application requirements of device miniaturization and high energy density storage, the exploration of high dielectric materials is a hot spot in the research field of new materials at home and abroad in recent years, and the research and development of the high-performance dielectric materials determine the future development potential of electronic components. The invention of the multilayer ceramic capacitor, which occupies half a river mountain in the capacitor market as a main electronic ceramic capacitor, greatly improves the charge storage capacity of the capacitor, and is widely applied to military electronic equipment such as civil electronic equipment, aerospace electronic equipment, military mobile communication equipment, military signal monitoring and the like.
The dielectric constant commonly used at presentMany of the dielectric materials are perovskite ferroelectric ceramic materials, such as barium titanate, lead zirconate titanate, etc. However, they all have some disadvantages such as phase transition, lead-containing, and the like, are not favorable for production and application, and are not environment-friendly. Some mature dielectric materials have been unable to meet the development requirements of the current technology, so that there is an urgent need for a new dielectric material to meet the needs of people in real life. Titanium dioxide-based ceramics have attracted extensive attention from researchers because of their excellent properties such as relatively high dielectric constant, low dielectric loss, and the like among simple compounds. In recent years, no research layer is available on titanium dioxide-based ceramic materials doped with either single-valence or di-pentavalent or tri-pentavalent co-doping, but most of the materials cannot simultaneously satisfy the requirements of high dielectric constant and low dielectric loss, especially the single-doped titanium dioxide-based ceramic materials. Titanium dioxide-based ceramics, for example tantalum mono-doped, have relatively high dielectric constants (> 10)4) However, the low frequency dielectric loss is large (> 0.5), and the requirement of low dielectric loss cannot be satisfied.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an AgTa co-doped titanium dioxide-based dielectric ceramic material which has high dielectric constant, low dielectric loss (especially low frequency low dielectric loss), good frequency temperature stability, strong practicability and easy production, and provide a preparation method for the ceramic material.
The ceramic material adopted for solving the technical problems has the general formula of (Ag)1/4Ta3/4)xTi1-xO2Wherein x represents a mole fraction, and the value of x is 0.005-0.01.
The preparation method of the AgTa co-doped titanium dioxide-based dielectric ceramic material comprises the following steps:
1. According to (Ag)1/4Ta3/4)xTi1-xO2Respectively weighing raw material Ag with the purity of more than 99.5 percent according to the stoichiometric proportion2O、Ta2O5And TiO2And fully mixing and ball-milling for 16-24 hours, and drying for 12-24 hours at 80-100 ℃ to obtain a raw material mixture.
2. and pre-sintering the raw material mixture at 1000-1200 ℃ for 2-4 hours to obtain pre-sintered powder.
3. And carrying out secondary ball milling, granulation, tabletting and binder removal on the pre-sintered powder, and sintering at 1400-1450 ℃ for 5-10 hours to obtain the AgTa co-doped titanium dioxide-based dielectric ceramic material.
In the above step 2, the raw material mixture is preferably calcined at 1100 ℃ for 3 hours.
In the step 3, the pre-sintered powder is preferably sintered for 10 hours at 1450 ℃ after secondary ball milling, granulation, tabletting and binder removal.
according to the invention, the metal element Ag is introduced into the Ta single-doped titanium dioxide-based ceramic material, so that the low-frequency dielectric loss of the ceramic material is remarkably reduced within 40-10 under the condition that the ceramic material has a high dielectric constant3The dielectric loss in the Hz frequency range is always kept below 0.07, and meanwhile, the frequency and temperature stability are excellent and kept between-15% and 15%.
The ceramic material has the advantages of simple preparation method, good repeatability, high yield, strong practicability and easy production.
Drawings
FIG. 1 is an XRD pattern of the ceramic material prepared in examples 1 to 2.
FIG. 2 is a graph showing the dielectric constant of the ceramic materials prepared in examples 1 to 6 as a function of the test frequency.
FIG. 3 is a graph of dielectric loss as a function of test frequency for ceramic materials prepared in examples 1-6.
FIG. 4 is a graph showing the relationship between the change of dielectric constant with test temperature and the temperature stability of the ceramic material prepared in example 1.
FIG. 5 is a graph showing the relationship between the change of dielectric constant with test temperature and the temperature stability of the ceramic material prepared in example 2.
Detailed Description
The invention will be further described in detail with reference to the following figures and examples, but the scope of the invention is not limited to these examples.
Example 1
1. According to (Ag)1/4Ta3/4)0.005Ti0.995O2Respectively weighing raw material Ag according to the stoichiometric ratio20.0359g of O (purity 99.7%) and Ta2O5(purity 99.99%) 0.2049g, TiO2(purity 99.5%) 19.7591g, and the mixture was charged into a nylon pot, and ball-milled for 24 hours with a ball mill 401 rpm using zirconium balls as milling balls and absolute ethyl alcohol as a ball-milling medium in a mass ratio of absolute ethyl alcohol to the raw material mixture of 1:1.2, and the zirconium balls were separated, and the raw material mixture was dried for 24 hours at 80 ℃ and ground for 30 minutes with a mortar to obtain a raw material mixture.
2. Placing the raw material mixture in an alumina crucible, covering, heating to 1100 ℃ at the heating rate of 3 ℃/min, preserving heat for 3 hours, naturally cooling to room temperature, discharging, and grinding for 5 minutes by using a mortar to obtain the pre-sintered powder.
3. Putting the pre-sintered powder into a nylon tank, taking zirconium balls as grinding balls and absolute ethyl alcohol as a ball milling medium, wherein the mass ratio of the absolute ethyl alcohol to the pre-sintered powder is 1:1.2, fully mixing and ball milling for 20 hours, separating the zirconium balls, drying the pre-sintered powder at 80 ℃ for 24 hours, and grinding the pre-sintered powder by using a mortar to obtain secondary ball-milled pre-sintered powder; adding a polyvinyl alcohol aqueous solution with the mass fraction of 5 percent into the powder, wherein the adding amount of the polyvinyl alcohol aqueous solution is 50 percent of the mass of the pre-sintered powder after the secondary ball milling, granulating, sieving by a 120-mesh sieve to prepare spherical particles, putting the spherical particles into a stainless steel die with the diameter of 11.5mm, and pressing the spherical particles into a cylindrical blank with the thickness of 1.5mm by a powder tablet press under the pressure of 6 MPa; putting the cylindrical blank on a zirconia flat plate, putting the zirconia flat plate in an alumina porcelain boat, heating to 500 ℃ in a muffle furnace for 380 minutes, preserving heat for 2 hours, naturally cooling to room temperature along with the furnace, heating to 1000 ℃ in a tubular furnace for 100 minutes, heating to 1450 ℃ at the heating rate of 2 ℃/minute, preserving heat for 10 hours, and naturally cooling to room temperature along with the furnace to obtain the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss.
Example 2
In this example, the following formula (Ag)1/4Ta3/4)0.01Ti0.99O2Respectively weighing raw material Ag according to the stoichiometric ratio2O(99.7％)0.0713g、Ta2O5(99.99％)0.4069g、TiO2(99.5%) 19.5217g, and the other steps were the same as in example 1, to obtain a low-frequency low-dielectric-loss AgTa co-doped titania-based dielectric ceramic material.
Example 3
In the embodiment, the temperature is raised to 1000 ℃ in a tube furnace within 100 minutes, then raised to 1410 ℃ at the temperature raising rate of 2 ℃/minute, and kept for 10 hours, and other steps are the same as the step in the embodiment 1, so that the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss is obtained.
Example 4
In the embodiment, the temperature is raised to 1000 ℃ in a tube furnace within 100 minutes, then raised to 1410 ℃ at the temperature raising rate of 2 ℃/minute, and kept for 10 hours, and other steps are the same as the step in the embodiment 2, so that the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss is obtained.
Example 5
In the embodiment, the temperature is raised to 1000 ℃ in a tubular furnace within 100 minutes, then raised to 1450 ℃ at the temperature raising rate of 2 ℃/minute, and kept for 5 hours, and other steps are the same as the steps in the embodiment 1, so that the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss is obtained.
example 6
in the embodiment, the temperature is raised to 1000 ℃ in a tubular furnace within 100 minutes, then raised to 1450 ℃ at the temperature raising rate of 2 ℃/minute, and kept for 5 hours, and other steps are the same as the steps in the embodiment 2, so that the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss is obtained.
The ceramic materials prepared in the above examples 1 and 2 were respectively subjected to XRD test using a D/max-2200X-ray diffractometer (manufactured by Japan chemical Co., Ltd.), and the results are shown in FIG. 1. As can be seen from FIG. 1, the ceramic materials prepared in examples 1 and 2 are both pure perovskite-like structures, and no second phase is formed.
Polishing the surface of the ceramic material prepared in the embodiment 1-6 to 0.5-0.6 mm thick by using 320-mesh, 800-mesh and 1500-mesh sandpaper in sequence, then coating silver paste with the thickness of 0.01-0.03 mm on the upper and lower surfaces of the ceramic, and placing the ceramic in a resistance furnace for heat preservation at 840 ℃ for 30 minutes. The Agilient4294 model 4294A is adoptedThe precise impedance analyzer and the E4980A LCR tester are used for testing the dielectric property of the ceramic respectively, and the results are shown in figures 2-5. As can be seen from FIGS. 2 and 3, the relative dielectric constants of the ceramic materials prepared in examples 1 to 6 were 9831, 17248, 10897, 14730, 10465 and 16467, the dielectric losses were 0.041, 0.042, 0.059, 0.069, 0.051 and 0.067, respectively, and the frequencies were 40 to 10 at 1kHz3The dielectric loss in the Hz range is always kept below 0.07. As can be seen from FIG. 4, the dielectric constant of the ceramic material prepared in example 1 is generally centered around 9000 at different frequencies within the range of-55 to 150 ℃, and the temperature change rate is-1.7% to 9%. As can be seen from FIG. 5, the dielectric constant of the ceramic material prepared in example 2 is mainly concentrated between 10000 and 17000 at-55 to 150 ℃ under different frequencies, and the temperature change rate is-15 to 15 percent. Therefore, the ceramic material has high dielectric constant and low dielectric loss, and the temperature stability is always kept between-15% and 15%, so that the application requirement of the material is met.
Claims (3)
1. The AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss is characterized in that: the ceramic material has the general formula of (Ag)1/4Ta3/4)xTi1-xO2Wherein the value of x is 0.005-0.01; the ceramic material is prepared by the following method:
(1) According to (Ag)1/4Ta3/4)xTi1-xO2Respectively weighing raw material Ag with the purity of more than 99.5 percent according to the stoichiometric proportion2O、Ta2O5And TiO2Fully mixing and ball-milling for 16-24 hours, and drying at 80-100 ℃ for 12-24 hours to obtain a raw material mixture;
(2) Pre-sintering the raw material mixture at 1000-1200 ℃ for 2-4 hours to obtain pre-sintered powder;
(3) And (3) carrying out secondary ball milling, granulation, tabletting and binder removal on the pre-sintered powder, and sintering at 1400-1450 ℃ for 5-10 hours to obtain the AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss.
2. The low frequency low dielectric loss AgTa co-doped titania-based dielectric ceramic material of claim 1, wherein: in step (2), the raw material mixture was prefired at 1100 ℃ for 3 hours.
3. The low frequency low dielectric loss AgTa co-doped titania-based dielectric ceramic material of claim 1, wherein: in the step (3), the pre-sintered powder is sintered for 10 hours at 1450 ℃ after secondary ball milling, granulation, tabletting and binder removal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711013960.1A CN107746271B (en) | 2017-10-26 | 2017-10-26 | AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711013960.1A CN107746271B (en) | 2017-10-26 | 2017-10-26 | AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107746271A CN107746271A (en) | 2018-03-02 |
| CN107746271B true CN107746271B (en) | 2019-12-17 |
Family
ID=61254169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711013960.1A Active CN107746271B (en) | 2017-10-26 | 2017-10-26 | AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107746271B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109133914B (en) * | 2018-11-23 | 2021-07-06 | 陕西师范大学 | Titanium dioxide-based ceramic material with high thermal stability and preparation method thereof |
| CN110407575A (en) * | 2019-06-28 | 2019-11-05 | 天津大学 | A kind of preparation method applied acceptor and be co-doped with titania-based dielectric ceramic material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078494A (en) * | 1997-08-28 | 2000-06-20 | U.S. Philips Corporation | Multilayer capacitor comprising barium-titanate doped with silver and rare earth metal |
| CN101186496A (en) * | 2007-11-27 | 2008-05-28 | 西安交通大学 | Low-temperature sintering Ti-base microwave medium ceramic material and preparation thereof |
| CN104478431A (en) * | 2014-11-26 | 2015-04-01 | 四川大学 | Ion modified titanium dioxide ceramic material with high dielectric constant and preparation method thereof |
-
2017
- 2017-10-26 CN CN201711013960.1A patent/CN107746271B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078494A (en) * | 1997-08-28 | 2000-06-20 | U.S. Philips Corporation | Multilayer capacitor comprising barium-titanate doped with silver and rare earth metal |
| CN101186496A (en) * | 2007-11-27 | 2008-05-28 | 西安交通大学 | Low-temperature sintering Ti-base microwave medium ceramic material and preparation thereof |
| CN104478431A (en) * | 2014-11-26 | 2015-04-01 | 四川大学 | Ion modified titanium dioxide ceramic material with high dielectric constant and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107746271A (en) | 2018-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102417726B1 (en) | Multilayer ceramic capacitor and manufacturing method of multilayer ceramic capacitor | |
| CN104446468B (en) | A kind of X9R type ceramic capacitor dielectric material and preparation method thereof | |
| CN106587987A (en) | C0G microwave dielectric material, preparation method thereof, and preparation method of ceramic material | |
| CN105732025B (en) | A kind of bismuth-sodium titanate base X9R type multi-layer ceramic capacitor material and its device preparation method | |
| CN101549997A (en) | Dielectric ceramic composition and an electronic component | |
| CN101560094A (en) | High-temperature stable medium material for multilayer ceramic capacitors and preparation method thereof | |
| CN107746271B (en) | AgTa co-doped titanium dioxide-based dielectric ceramic material with low frequency and low dielectric loss and preparation method thereof | |
| CN107640970B (en) | The AgNb of low frequency low-dielectric loss is co-doped with titania-based dielectric ceramic material and preparation method thereof | |
| CN113061025A (en) | Lead-free bismuth sodium titanate-based X9R type ceramic capacitor material and preparation method thereof | |
| JPS61275164A (en) | Dielectric ceramic composition having high permittivity and flat tc properties | |
| CN111410530A (en) | Anti-reduction BaTiO3Base medium ceramic and preparation method thereof | |
| CN108218423A (en) | A kind of X8R types ceramic capacitor dielectric material and preparation method thereof | |
| CN108395243B (en) | XnR BaTiO with wide temperature range and high stability3Base medium ceramic and preparation method thereof | |
| CN106631002A (en) | Dielectric material for Mg-Zn-Ti-based radio-frequency MLCC (multi-layer ceramic capacitor) and preparation method of dielectric material | |
| CN105399405A (en) | Low dielectric microwave ferroelectric ceramics and preparation method thereof | |
| CN109133914B (en) | Titanium dioxide-based ceramic material with high thermal stability and preparation method thereof | |
| CN103113100A (en) | High-temperature stabilization ceramic capacitor dielectric | |
| CN102963928A (en) | Barium zirconate titanate based Y5V powder material and preparation method thereof | |
| CN108863349A (en) | A kind of barium titanate-based lead-free height Jie temperature-stable ceramic material and preparation method thereof | |
| CN112408977A (en) | High-quality ceramic dielectric material and preparation method thereof | |
| CN110423116B (en) | X7R type ceramic capacitor dielectric material and preparation method thereof | |
| CN103864416A (en) | Method for preparing barium titanate ceramic capacitor medium at low sintering temperature | |
| CN109437896B (en) | Positive temperature coefficient X7R ceramic dielectric material and preparation method thereof | |
| CN101333105B (en) | X7RMLCC medium porcelain of thin medium | |
| CN107573060B (en) | Ceramic dielectric material for high-voltage-resistant MLCC and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |