CN107733324B - The sub- management method of full spectrum light and system in photovoltaic-coupled thermomechanics system - Google Patents
The sub- management method of full spectrum light and system in photovoltaic-coupled thermomechanics system Download PDFInfo
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- CN107733324B CN107733324B CN201710845252.8A CN201710845252A CN107733324B CN 107733324 B CN107733324 B CN 107733324B CN 201710845252 A CN201710845252 A CN 201710845252A CN 107733324 B CN107733324 B CN 107733324B
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- 238000001228 spectrum Methods 0.000 title claims abstract description 56
- 238000007726 management method Methods 0.000 title description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011148 porous material Substances 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 230000010287 polarization Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000002110 nanocone Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000011358 absorbing material Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 239000000571 coke Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the sub- management systems of full spectrum light in photovoltaic-coupled thermomechanics system, belong to semiconductor devices energy management field.The management system successively includes full spectrum anti-reflection subsystem, photovoltaic cell, lower energy photon transmission subsystem along the control path of light or absorbs subsystem and thermo-electric device；Above-mentioned full spectrum anti-reflection subsystem is by several period hollow Nano columns (2) and is distributed in the random nano-pore (3) on period hollow Nano column (2) periphery and forms；Above-mentioned photovoltaic cell is monocrystalline silicon battery；Above-mentioned lower energy photon transmission subsystem is by TiO2Anti-reflection film (4) and SiO2Anti-reflection film (5) composition.The present invention, which improves photovoltaic cell, to lose the defect that can not be utilized using portions incident photon energy and internal thermalization, realize efficient utilization of the photovoltaic-coupled thermomechanics system to the full spectrum of solar energy.
Description
Technical field
The invention belongs to semiconductor devices energy management fields, and in particular to the full spectrum in photovoltaic-coupled thermomechanics system
Photon manages method and system.
Background technique
As the mankind are increasingly becoming the coke of international concern to a large amount of exploitations of fossil energy and consumption, energy crisis
Point.As the renewable and clean energy resource with huge reserves, solar energy undoubtedly most has one of the energy of Utilization prospects.Now such as
The present, photovoltaic cell have become one of the main method using solar energy, but since the forbidden bandwidth of semiconductor material limits,
Traditional semi-conductor cell can only be higher than the luminous energy of forbidden bandwidth part using energy, greatly limit the efficiency of solar energy utilization
It is promoted.In recent years, the proposition of photovoltaic-thermoelectricity (PV-TE) coupled system breaches the limitation of conventional photovoltaic battery, so that wide spectrum
Solar energy highly effective is using possibility is become, by the way that thermo-electric device to be placed on to the bottom of photovoltaic cell, using photovoltaic cell as heat
The hot end of electric material uses, and makes full use of the waste heat lower than the solar photon energy of forbidden band value and photovoltaic cell itself, therefore,
The reasonable step distribution for how realizing the sub- energy of internal system full spectrum light, makes the photon energy of different-waveband by different components
It makes full use of, is a critical issue for realizing full spectrum Solar use by the system.
Summary of the invention
It can only be lacked using what portions incident photon energy and internal thermalization loss can not be utilized to improve photovoltaic cell
It falls into, realizes efficient utilization of the photovoltaic-coupled thermomechanics system to the full spectrum of solar energy, the present invention provides a kind of photovoltaic-coupled thermomechanics
The sub- management system of full spectrum light in system.
The sub- management system of full spectrum light in photovoltaic-coupled thermomechanics system, it is characterised in that: tune of the management system along light
Control path successively includes transmiting subsystem for reducing the full spectrum anti-reflection subsystem, photovoltaic cell, lower energy photon of full spectral reflectance
System absorbs subsystem and thermo-electric device；Light reduces all band reflection by full spectrum anti-reflection subsystem, makes the light of full spectrum
Sub- energy enters photovoltaic cell, and the high-energy photon higher than forbidden band value is absorbed and utilized by photovoltaic cell；Lower than the low energy light of forbidden band value
Son absorbs subsystem by lower energy photon transmission subsystem or lower energy photon, and then is converted to heat and is utilized by thermo-electric device；On
Full spectrum anti-reflection subsystem is stated by several period hollow Nano columns and the random nanometer for being distributed in period hollow Nano column periphery
Hole composition；Above-mentioned photovoltaic cell is monocrystalline silicon battery；Above-mentioned lower energy photon transmission subsystem is by TiO2Anti-reflection film and SiO2Anti-reflection film
Composition.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that: above-mentioned lower energy photon
Transmission subsystem absorbs subsystem, and full spectrum anti-reflection subsystem all has wide-angle and polarization insensitive characteristic, that is, enters
Firing angle be in 0 ° -50 ° with different polarization state under be able to maintain the adjusting function of above-mentioned management system.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that: above-mentioned full spectrum subtracts
Anti- subsystem is combined by a kind of following structure composition or several structure groups: moth ocular structure, nanocone structures, nano pyramid knot
Structure, nanometer rod structure, nano-pore structure, phasmon structure.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that: above-mentioned lower energy photon
Transmission subsystem is combined by a kind of following structure composition or several structure groups: moth ocular structure, nanocone structures, nano pyramid
Structure, nanometer rod structure, nano-pore structure, phasmon structure.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that: above-mentioned lower energy photon
Absorb the structure composition that subsystem is formed by infrared heat absorbing material.
Wide-angle possessed by the sub- management system of full spectrum light and system that above-mentioned various structures are formed and polarization are not
Sensitivity characteristic is rolled over by the principle of light-matter interaction using the different effect between micro-structure and photon, such as gradient
Rate, scattering, microcavity effect, phasmon etc. are penetrated, realizes the regulation to full spectral characteristic (absorption and transmission).For high energy and low
The different regulation demands of energy photon realize required photon tube by adjusted and controlled size, arrangement mode, combination etc.
Manage effect.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that: above-mentioned photovoltaic cell
Including monocrystalline silicon battery, polycrystal silicon cell, amorphous silicon battery, gallium arsenide cells, perovskite battery, copper indium gallium selenide cell, dyestuff
Sensitized cells, organic battery, HIT battery.
Different types of battery has different forbidden bandwidths, wave band locating for corresponding high-energy photon and lower energy photon
Difference, therefore size, arrangement mode, combination for also needing design structure etc. copes with the full spectrum of variety classes battery
Photon regulatory requirement.
The sub- management system of full spectrum light in the photovoltaic-coupled thermomechanics system, it is characterised in that specific structure is as follows:
The period of above-mentioned period hollow Nano column is 600nm, and for outer diameter in 380nm, internal diameter is highly 2000nm between 50-250nm.
The combination of period hollow Nano column and random nano-pore enhances scattering of the photon in structure, realizes all band
(300-2500nm) anti-reflection, bottom TiO2And SiO2The transmission that the graded index that film layer is formed realizes lower energy photon is transmitted, so that
The absorption that monocrystalline silicon is higher than the high-energy photon of its forbidden band value (300-1100nm) can be transmissive to of about 97%, about 55% lower energy photon
To thermo-electric device, and have both wide-angle and polarization insensitive characteristic.
Detailed description of the invention
Fig. 1 schematic structural view of the invention；
Figure label title: 1, semiconductor base, 2, period hollow Nano column, 3, the random nano-pore in periphery, 4, TiO2
Anti-reflection film, 5, SiO2Anti-reflection film, P are the period of period hollow Nano column, D1For the outer diameter of period hollow Nano column, D2For the period
The internal diameter of hollow Nano column, H are the height of period hollow Nano column.
Specific embodiment
The sub- management method of full spectrum light in above-mentioned photovoltaic-coupled thermomechanics system are as follows: higher than the height of photovoltaic cell forbidden band value
Energy photon is absorbed and utilized by photovoltaic cell, lower than the heat that the lower energy photon energy of photovoltaic cell forbidden band value can reach thermo-electric device
End makes to be utilized together with the thermalization off-energy of itself and battery itself by the thermo-electric device of bottom, realize to the sub- energy of full spectrum light
Step regulation and utilize.
This method illustrates that silion cell is the most wide battery of current business application by taking the structure designed on silion cell as an example, and
And use the absorption that structure is used to improve the high-energy photon higher than forbidden band value.Based on single crystal battery, on the surface of silicon wafer
Diversified forms, the structure of size and arrangement combining form are designed, can obtain that can be applied to photovoltaic-coupled thermomechanics system complete
Spectrum photon management effect.On this basis, the sub- management method of full spectrum light and structure in this photovoltaic-coupled thermomechanics system
It can be applicable to other kinds of photovoltaic cell, this to specifically include:
Specific example 1:
The sub- management method of full spectrum light and structure in photovoltaic-coupled thermomechanics system, specific embodiment are as follows:
Selection monocrystalline silicon is photovoltaic cell material, full SPECTRUM MANAGEMENT method are as follows: so that being higher than monocrystalline silicon forbidden band value (300-
High-energy photon 1100nm) is absorbed by single crystal silicon material, is reached lower than monocrystalline silicon forbidden band value (1100-2500nm) through monocrystalline silicon
Thermo-electric device hot end.Structure in embodiment are as follows: in silicon base, hollow Nano column is six side's periodic arrangements, each hollow to receive
Distance is 600nm between the center line of meter Zhu, and it is highly 2000nm that hollow Nano column outer diameter, which is 380nm, internal diameter 250nm,.
Bottom surface transmits film layer, and the material of first layer film layer is titanium dioxide, with a thickness of 50nm.
Ground transmits film layer, and the material of second layer film layer is silica, with a thickness of 50nm.
It is compound that this example implements upper surface composite construction and lower surface film layer structure in the photovoltaic-coupled thermomechanics system obtained
Full spectrum light manage structure, be higher than monocrystalline silicon forbidden band value (300-1100nm) wave band in, monocrystalline silicon average absorption ratio
It is 97%, in the wave band lower than monocrystalline silicon forbidden band value (1100-2500nm), monocrystalline silicon average transmission is 55%, and in incidence angle
The sub- management effect of full spectrum light under (0-50 °) and different polarization situation (TE ripple and TM ripple) varies less.
Specific example 2:
The sub- management method of full spectrum light and structure in photovoltaic-coupled thermomechanics system, specific embodiment are as follows:
Selection monocrystalline silicon is photovoltaic cell material, full SPECTRUM MANAGEMENT method are as follows: so that being higher than monocrystalline silicon forbidden band value (300-
High-energy photon 1100nm) is absorbed by monocrystalline silicon, reaches thermoelectricity through monocrystalline silicon lower than monocrystalline silicon forbidden band value (1100-2500nm)
Device hot end.Structure in embodiment are as follows: in silicon base, hollow Nano column is six side's periodic arrangements, each hollow Nano column
Center line between distance be 600nm, hollow Nano column outer diameter be 380nm, internal diameter 150nm, be highly 2000nm.
Bottom surface transmits film layer, and the material of first layer film layer is titanium dioxide, with a thickness of 50nm.
Ground transmits film layer, and the material of second layer film layer is silica, with a thickness of 50nm.
It is compound that this example implements upper surface composite construction and lower surface film layer structure in the photovoltaic-coupled thermomechanics system obtained
Full spectrum light manage structure, be higher than monocrystalline silicon forbidden band value (300-1100nm) wave band in, monocrystalline silicon average absorption ratio
It is 97.2%, in the wave band lower than monocrystalline silicon forbidden band value (1100-2500nm), monocrystalline silicon average transmission is 55%, and in incidence
The sub- management effect of full spectrum light under angle (0-50 °) and different polarization situation (TE ripple and TM ripple) varies less.
Specific example 3:
The sub- management method of full spectrum light and structure in photovoltaic-coupled thermomechanics system, specific embodiment are as follows:
Selection monocrystalline silicon is photovoltaic cell material, full SPECTRUM MANAGEMENT method are as follows: so that being higher than monocrystalline silicon forbidden band value (300-
High-energy photon 1100nm) is absorbed by monocrystalline silicon, reaches thermoelectricity through silicon materials lower than monocrystalline silicon forbidden band value (1100-2500nm)
Device hot end.Structure in embodiment are as follows: in silicon base, hollow Nano column is six side's periodic arrangements, each hollow Nano column
Center line between distance be 600nm, hollow Nano column outer diameter be 380nm, internal diameter 50nm, be highly 2000nm.
Bottom surface transmits film layer, and the material of first layer film layer is titanium dioxide, with a thickness of 50nm.
Ground transmits film layer, and the material of second layer film layer is silica, with a thickness of 50nm.
It is compound that this example implements upper surface composite construction and lower surface film layer structure in the photovoltaic-coupled thermomechanics system obtained
Full spectrum light manage structure, be higher than monocrystalline silicon forbidden band value (300-1100nm) wave band in, monocrystalline silicon average absorption ratio
It is 97.5%, in the wave band lower than silicon materials forbidden band value (1100-2500nm), monocrystalline silicon average transmission is 55%, and in incidence
The sub- management effect of full spectrum light under angle (0-50 °) and different polarization situation (TE ripple and TM ripple) varies less.
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
1. the sub- management system of full spectrum light in photovoltaic-coupled thermomechanics system, it is characterised in that:
The management system successively includes full spectrum anti-reflection subsystem, photovoltaic cell, lower energy photon transmission along the control path of light
System absorbs subsystem and thermo-electric device；Light reduces all band reflection by full spectrum anti-reflection subsystem, makes full spectrum
Photon energy enters photovoltaic cell, and the high-energy photon higher than forbidden band value is absorbed and utilized by photovoltaic cell；Lower than the low energy of forbidden band value
Photon absorbs subsystem by lower energy photon transmission subsystem or lower energy photon, and then is converted to heat and is utilized by thermo-electric device；
Above-mentioned full spectrum anti-reflection subsystem is by several period hollow Nano columns (2) and is distributed in period hollow Nano column (2) periphery
Random nano-pore (3) composition；
Above-mentioned photovoltaic cell is monocrystalline silicon battery；
Above-mentioned lower energy photon transmission subsystem is by TiO2Anti-reflection film (4) and SiO2Anti-reflection film (5) composition.
2. the sub- management system of full spectrum light in photovoltaic described in claim 1-coupled thermomechanics system, it is characterised in that: above-mentioned
Lower energy photon transmission subsystem absorbs subsystem, and full spectrum anti-reflection subsystem all has wide-angle and polarization insensitive is special
Property.
3. the sub- management system of full spectrum light in photovoltaic according to claim 1-coupled thermomechanics system, it is characterised in that:
Above-mentioned full spectrum anti-reflection subsystem is combined by a kind of following structure composition or several structure groups: moth ocular structure, nanocone structures,
Nano pyramid structure, nanometer rod structure, nano-pore structure, phasmon structure.
4. the sub- management system of full spectrum light in photovoltaic according to claim 1-coupled thermomechanics system, it is characterised in that:
Above-mentioned lower energy photon transmission subsystem is combined by a kind of following structure composition or several structure groups: moth ocular structure, nanocone knot
Structure, nano pyramid structure, nanometer rod structure, nano-pore structure, phasmon structure.
5. the sub- management system of full spectrum light in photovoltaic according to claim 1-coupled thermomechanics system, it is characterised in that:
Above-mentioned lower energy photon absorbs the structure composition that subsystem is formed by infrared heat absorbing material.
6. the sub- management system of full spectrum light in photovoltaic according to claim 1-coupled thermomechanics system, it is characterised in that:
Above-mentioned photovoltaic cell includes monocrystalline silicon battery, polycrystal silicon cell, amorphous silicon battery, gallium arsenide cells, perovskite battery, copper and indium gallium
Selenium cell, dye-sensitized cell, organic battery, HIT battery.
7. the sub- management system of full spectrum light in photovoltaic according to claim 1-coupled thermomechanics system, it is characterised in that tool
Body structure is as follows:
The period of above-mentioned period hollow Nano column (2) is 600nm, and in 380nm, internal diameter is highly outer diameter between 50-250nm
2000nm。
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