CN107731956B - 一种薄膜太阳能电池吸收层制备工艺控制方法 - Google Patents
一种薄膜太阳能电池吸收层制备工艺控制方法 Download PDFInfo
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- CN107731956B CN107731956B CN201710800854.1A CN201710800854A CN107731956B CN 107731956 B CN107731956 B CN 107731956B CN 201710800854 A CN201710800854 A CN 201710800854A CN 107731956 B CN107731956 B CN 107731956B
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 72
- 238000004886 process control Methods 0.000 claims abstract description 5
- 229910052755 nonmetal Inorganic materials 0.000 claims description 53
- 238000009826 distribution Methods 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 5
- 238000001883 metal evaporation Methods 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710800854.1A CN107731956B (zh) | 2017-09-07 | 2017-09-07 | 一种薄膜太阳能电池吸收层制备工艺控制方法 |
Applications Claiming Priority (1)
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CN201710800854.1A CN107731956B (zh) | 2017-09-07 | 2017-09-07 | 一种薄膜太阳能电池吸收层制备工艺控制方法 |
Publications (2)
Publication Number | Publication Date |
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CN107731956A CN107731956A (zh) | 2018-02-23 |
CN107731956B true CN107731956B (zh) | 2022-07-05 |
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CN201710800854.1A Active CN107731956B (zh) | 2017-09-07 | 2017-09-07 | 一种薄膜太阳能电池吸收层制备工艺控制方法 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000171840A (ja) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | 積層型薄膜光素子およびそれを用いる光制御方法および光制御装置 |
CN105514218A (zh) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | 一种制备铜铟镓硒吸收层的在线监测方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2188406B1 (en) * | 2007-09-12 | 2018-03-07 | Flisom AG | Method for manufacturing a compound film |
US20110089348A1 (en) * | 2008-07-14 | 2011-04-21 | Moshe Finarov | Method and apparatus for thin film quality control |
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2017
- 2017-09-07 CN CN201710800854.1A patent/CN107731956B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000171840A (ja) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | 積層型薄膜光素子およびそれを用いる光制御方法および光制御装置 |
CN105514218A (zh) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | 一种制备铜铟镓硒吸收层的在线监测方法 |
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Effective date of registration: 20201223 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Beijing Huihong Technology Co., Ltd Address before: 517000 High-tech Five Road of Heyuan High-tech Development Zone, Guangdong Province Applicant before: GUANGDONG HANERGY THIN-FILM SOLAR Co.,Ltd. |
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Effective date of registration: 20211026 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Dongjun new energy Co.,Ltd. Address before: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant before: Beijing Huihong Technology Co., Ltd |
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