CN107731934A - A kind of optical-electrical converter and its conversion method - Google Patents
A kind of optical-electrical converter and its conversion method Download PDFInfo
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- CN107731934A CN107731934A CN201711173495.8A CN201711173495A CN107731934A CN 107731934 A CN107731934 A CN 107731934A CN 201711173495 A CN201711173495 A CN 201711173495A CN 107731934 A CN107731934 A CN 107731934A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
Abstract
The embodiment of the invention discloses a kind of optical-electrical converter and its conversion method, wherein, the optical-electrical converter includes：Cathode base, anode grid substrate and Aligned carbon nanotubes film；Wherein, parallel arrangement between each CNT on the Aligned carbon nanotubes film and the cathode base vertical connection and each CNT；Aligned carbon nanotubes film, the energy of the incident beam for absorbing different wave length, negative electrical charge is inspired in the presence of the incident beam；The anode grid substrate, the negative electrical charge inspired for receiving the Aligned carbon nanotubes film, negative potential is formed on the surface relative with the cathode base；The cathode base, the positive charge left after the negative electrical charge is inspired for receiving the Aligned carbon nanotubes film, positive potential is formed on the surface relative with the anode grid substrate.Technical scheme provided in an embodiment of the present invention can improve the efficiency of opto-electronic conversion.
Description
Technical field
The present embodiments relate to photoelectric energy transformation technology field, more particularly to a kind of optical-electrical converter and its conversion side
Method.
Background technology
With the development of society, the mankind constantly increase to the needs of the energy, and the environment of the exhaustion of traditional resource and initiation
Problem getting worse so that it is the developing major issue of Present Global to seek sustainable clean energy resource.And nature
Solar energy be solve current mankind development in face one of effective way of energy problem.
In the prior art, the photoelectric conversion technology of solar energy is mainly had following two：
Scheme one, mainly using the photovoltaic effect of interface by luminous energy direct transformation during photovoltaic generation
It is built-in reverse in the presence of one in the intersection in P areas and N areas when semiconductor PN is in poised state for a kind of technology of electric energy
Electric field, when the energy of incident sunshine is more than the energy bandgaps of battery material so that the valence-band electrons in battery material absorb energy
Transition occurs for amount so that occurs hole in valence band, light induced electron and hole are in the presence of built in field respectively to N areas and P
Do counter motion in area so that electrical potential difference is caused at both ends, thus produces electron-hole pair, but in a short period of time electronics and
Hole easily occurs compound, therefore constrains the efficiency that luminous energy changes into electric energy significantly.
Scheme two, in photo-thermal power generation technology, the heat catalysis mainly using condenser system by solar energy collecting to inside
It is interior, generated electricity using high-temperature steam driving steam turbine group or obtain electric energy using thermoelectromotive force effect.Due to needing solar energy
It is delivered in heat catalysis, causes to reduce part luminous energy, and then reduce the efficiency that luminous energy changes into electric energy.
But prior art has the following disadvantages：
(1), there is light induced electron and the Complex Problem in hole in PN junction prepared by scheme one in power generation process, reduce photoelectricity
The efficiency of conversion.
(2), need to transmit heat to heat catalysis during the photo-thermal power generation of scheme two, reduce the efficiency of opto-electronic conversion.
The content of the invention
The embodiment of the present invention provides a kind of optical-electrical converter and its conversion method, it is possible to increase photoelectric transformation efficiency.
In a first aspect, the embodiments of the invention provide a kind of optical-electrical converter, the optical-electrical converter includes：Negative electrode base
Plate, anode grid substrate and Aligned carbon nanotubes film；Wherein, each CNT on the Aligned carbon nanotubes film with it is described
Parallel arrangement between cathode base vertical connection and each CNT；
Aligned carbon nanotubes film, the energy of the incident beam for absorbing different wave length, in the work of the incident beam
Negative electrical charge is inspired under；
The anode grid substrate, the negative electrical charge inspired for receiving the Aligned carbon nanotubes film, with it is described
The relative surface of cathode base forms negative potential；
The cathode base, the positive electricity left after the negative electrical charge is inspired for receiving the Aligned carbon nanotubes film
Lotus, positive potential is formed on the surface relative with the anode grid substrate.
Second aspect, the embodiment of the present invention additionally provide a kind of opto-electronic conversion method, and methods described includes：
The energy of the incident beam of Aligned carbon nanotubes film absorption different wave length, swash in the presence of the incident beam
Send negative electrical charge；
Anode grid substrate receives the negative electrical charge that the Aligned carbon nanotubes film inspires, relative with cathode base
Surface forms negative potential；
The cathode base receives the Aligned carbon nanotubes film and inspires the positive charge left after the negative electrical charge,
The surface relative with the anode grid substrate forms positive potential；Wherein, each CNT on the Aligned carbon nanotubes film
The parallel arrangement between the cathode base vertical connection and each CNT.
The embodiment of the present invention can carry out efficient absorption by using Aligned carbon nanotubes film to incident beam, by
It is higher in the carbon nanotube density of preparation, it is easier to be heated to high temperature emissive negative electrical charge, after anode grid substrate receives negative electrical charge
Electrical potential difference is produced between cathode base, so as to which driving load works, realizes the transfer process of photoelectric energy；Wherein electron excitation
During relate only to the transmitting of negative electrical charge, positive charge is delivered to cathode base, will not be produced in negative electrical charge emission process just,
Negative electrical charge is compound and the problems such as carrier balance, and in photoelectric conversion process, avoids Light energy transfer to thermal medium so that
Improve the efficiency of opto-electronic conversion.
Brief description of the drawings
Fig. 1 is the first structure schematic diagram for the optical-electrical converter that the embodiment of the present invention one provides；
Fig. 2 is the CNT and cathode base structural representation connected vertically that the embodiment of the present invention one provides；
Fig. 3 is the second structural representation of the optical-electrical converter that the embodiment of the present invention two provides；
Fig. 4 is the 3rd structural representation of the optical-electrical converter that the embodiment of the present invention three provides；
Fig. 5 is the 4th structural representation of the optical-electrical converter that the embodiment of the present invention four provides；
Fig. 6 is the flow chart for the opto-electronic conversion method that the embodiment of the present invention five provides.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrate only in description, accompanying drawing.
Embodiment one
Fig. 1 is the first structure schematic diagram for the optical-electrical converter that the embodiment of the present invention one provides, and the embodiment of the present invention can fit
For the situation of opto-electronic conversion in vacuum environment or non-vacuum environment, vacuum environment includes vacuum chamber and the outer space, wherein working as sun
In the case that the distance between electrode substrate and CNT be not short-circuit less than 100nm, vacuum chamber (antivacuum) can be not provided with.
Wherein opto-electronic conversion can be natural light (sunshine) energy, the laser beam of high-energy-density can also be changed.
As shown in figure 1, the concrete structure of the optical-electrical converter is including as follows：Cathode base 1, anode grid substrate 3 and upright carbon
Nano-tube film；Wherein, each CNT 2 on Aligned carbon nanotubes film and the vertical connection of cathode base 1 and each carbon
Parallel arrangement between nanotube 2；Aligned carbon nanotubes film, the energy of the incident beam for absorbing different wave length, in incidence
Inspire negative electrical charge 4 in the presence of light beam, CNT 2 has the optical absorption characteristics of Proximate blackbody, be current absorptivity most
High material；Prepared on cathode base 1 densification CNT 2 be easy to absorb heat be warming up to 1000 DEG C, realize negative electricity
Lotus 4 (electronics) excites, and on the surface of CNT 2 or is internally formed positive charge (hole)；Anode grid substrate 3, it is upright for receiving
The negative electrical charge 4 that carbon nano-tube film inspires, negative potential is formed on the surface relative with cathode base 1；Cathode base 1, is used for
Receive Aligned carbon nanotubes film and inspire the positive charge left after negative electrical charge, formed just on the surface relative with anode grid substrate 3
Potential so that form the electrical potential difference of positive potential and negative potential between cathode base 1 and anode grid substrate 3, the electrical potential difference of formation can be with
Driving load 5 works.
Technical scheme provided in an embodiment of the present invention, the optical absorption characteristics by using CNT close to black matrix can be with
Efficient absorption is carried out to incident light, because the Aligned carbon nanotubes density of film of preparation is higher, is easily heated to high temperature
Realize that the transmitting of electronics, anode grid substrate produce electrical potential difference formation electric current after receiving negative electrical charge between cathode base, so as to drive
Dynamic load works, and realizes the conversion of photoelectric energy；Negative electrical charge is wherein related only to during electron excitation and is transmitted into anode base
Plate, no positive charge participate in, and can solve the problems such as positive and negative charge recombination and carrier balance during traditional PN junction cell power generation；
And in photoelectric conversion process, avoiding luminous energy from transmitting heat to heat catalysis, said process improves the effect of opto-electronic conversion
Rate；Optical-electrical converter and conversion method have higher environmental suitability simultaneously.
Wherein, the process of opto-electronic conversion occurs in vacuum environment, and required vacuum environment is to exclude in air
Gas molecule stops that, to negative electrical charge (electronics) emission process, vacuum environment includes setting vacuum cavity and outer space environment.Vacuum
Cavity can be the compound encapsulation structure of glass-encapsulated, Metal Packaging, ceramic package or above-mentioned material, and wherein vacuum cavity is suitable
When position offers the optical window of high penetration, it is ensured that the low-loss transmission of incident beam, optical window material can select
Glass, quartz, sapphire and diamond etc. are taken, while vacuum cavity is appropriate in order to keep internal condition of high vacuum degree to increase
Getter etc..
Fig. 2 is CNT and the cathode base structural representation connected vertically that the embodiment of the present invention one provides, such as Fig. 2
Shown, CNT 2 can use the technologies such as chemical vapour deposition technique, arc discharge method or microwave plasma method to prepare.Wherein
The shape of CNT 2 of growth includes the patterns such as rectangle, circle, ellipse or array.Alternatively, carbon nanometer is used as using metal molybdenum
The growth substrate of pipe 2, wherein growth substrate can be as the cathode bases 1 of optical-electrical converter, and molybdenum sheet is pre-processed, and use
Electron beam evaporation technique is passing through chemical vapour deposition technique (MOCVD) to molybdenum sheet surface deposition of carbon nanotubes growth catalyst
The CNT 2 of growing upright.It is logical first after the growth substrate that deposition has appropriate carbon nanotube growth catalysts is put into growth apparatus
Enter 200-700sccm hydrogen as reducibility gas, then growth apparatus is rapidly heated to 500-750 DEG C, is being passed through 20-
10-30min growth time is kept after 100sccm acetylene gas, is obtained after growth apparatus is cooled in metal molybdenum base
A diameter of 0.1-50nm of the CNT 2 of basal surface vertical growth, wherein CNT 2.
Alternatively, anode grid substrate includes：Planar transparent anode substrate, perforate transparent anode substrate, the opaque anode of planar
Substrate or the opaque anode grid substrate of perforate；Cathode base includes：Planar transparent cathode substrate or the opaque negative electrode base of planar
Plate.
Wherein, the anode grid substrate of selection is respectively provided with good electric conductivity with cathode base, according to the device architecture need of making
Will, anode grid substrate and cathode base can be made into transparency carrier (material can be ITO, graphene or metal grill etc.), also may be used
To be opaque metal substrate (material can be copper, silver, molybdenum, carbon cloth and stainless steel etc.) or opaque heavy doping silicon substrate
Bottom etc..Cathode base is shaped as planar structure, and anode grid substrate shape can be for planar structure or in order to meet beam Propagation
Need, face open interior is carried out to planar anode grid substrate, forms perforate anode grid substrate.Finally so that anode grid substrate includes：Planar is saturating
Bright anode grid substrate, perforate transparent anode substrate, the opaque anode grid substrate of planar or the opaque anode grid substrate of perforate；Cathode base
Including：Planar transparent cathode substrate or the opaque cathode base of planar.
Embodiment two
Fig. 3 is the second structural representation of the optical-electrical converter that the embodiment of the present invention two provides, on the basis of embodiment one
On optimize, the optical-electrical converter of the specifically embodiment of the present invention also includes：Aligned carbon nanotubes film absorption passes through light
The incident beam formed after collecting system convergence, inspires negative electrical charge in the presence of incident beam；Wherein, incident beam is from face
Shape transparent cathode substrate passes through.
The natural light that the embodiment of the present invention converges by the vacuum chamber of ground environment, by light collection system can be from
Planar transparent cathode substrate passes through and is irradiated to the surface or inside of CNT, and CNT can send stable negative electrical charge quilt
Anode grid substrate receives so that carbon nano tube surface is internally formed positive charge and is delivered to cathode base, avoids positive and negative electric charge
It is compound so that electric current is formed between anode grid substrate and cathode base, improves the efficiency of opto-electronic conversion, while can also be used to collect
Ground solar energy.
As shown in figure 3, optical-electrical converter provided in an embodiment of the present invention is applicable to surface collection solar energy, the device
Worked in vacuum chamber that can be at the earth's surface, the higher CNT 2 of density mainly prepared on the surface of cathode base 1,
Incident beam 9 is formed by light collection system 7 by the light beam for radiating radiation source 8 (sun), incident beam 9 passes through transparent
Cathode base 1 is irradiated to the surface of the CNT 2 of growing upright, the surface of CNT 2 or inside localized regions of elevated temperature area is occurred,
Wherein localized regions of elevated temperature area can be located at center or the marginal position of CNT 2, and the temperature in localized regions of elevated temperature area is more than 600
After DEG C, stable negative electrical charge 4 (electronics) transmitting occurs in CNT 2 so that anode grid substrate 3 receives the negative electrical charge (electricity of transmitting
Son) electrical potential difference is produced between cathode base 1 afterwards, worked so as to driving load 5, realize the process of opto-electronic conversion.
Embodiment three
Fig. 4 is the 3rd structural representation of the optical-electrical converter that the embodiment of the present invention three provides, and photoelectricity turns in the present embodiment
Change for natural light (sunshine).Optimized on the basis of embodiment one, specifically the opto-electronic conversion of the embodiment of the present invention
Device also includes：The incident beam that Aligned carbon nanotubes film absorption is formed after being converged by light collection system, in incident beam
In the presence of inspire negative electrical charge；Wherein, incident beam passes through from the tapping of the opaque anode grid substrate of perforate.
For the embodiment of the present invention in the environment of the outer space, the sunshine converged by light collection system is opaque from perforate
Anode grid substrate passes through the surface or inside for being irradiated to CNT, and CNT can send stable negative electrical charge and be connect by anode grid substrate
Receive so that carbon nano tube surface is internally formed positive charge and is delivered to cathode base, avoids the compound of positive and negative electric charge so that sun
Electric current is formed between electrode substrate and cathode base, improves the efficiency of opto-electronic conversion.
As shown in figure 4, optical-electrical converter provided in an embodiment of the present invention is applicable to the outer space to sunshine or other spokes
Penetrate the absorption and conversion of source energy.In the present embodiment, the radius in autoradiolysis in future source 8 (sunshine) is through light collection system
The incident beam 9 formed after 7 convergences, can pass through from the tapping of the opaque anode grid substrate 3 of perforate, focus on CNT 2
Regional area forms localized regions of elevated temperature area, and wherein localized regions of elevated temperature area can be located at center or the margin location of multiple CNTs 2
Put, so that CNT 2 receives luminous energy regional area is heated up, after more than 600 DEG C, CNT 2 can be sent surely
Fixed negative electrical charge 4 (electronics) is received by anode grid substrate 3 so that the surface of CNT 2 is internally formed positive charge and is delivered to negative electrode
Substrate 1 so that electrical potential difference is produced between anode grid substrate 3 and cathode base 1, and then opto-electronic conversion is verified by driving load 5
Process.
Example IV
Fig. 5 is the 4th structural representation of the optical-electrical converter that the embodiment of the present invention four provides；On the basis of embodiment one
On optimize, the optical-electrical converter of the specifically embodiment of the present invention also includes：Aligned carbon nanotubes film receives luminescent device
Caused incident beam, inspires negative electrical charge in the presence of incident beam；Wherein, incident beam is from the opaque anode base of perforate
The tapping of plate passes through.
Incident beam caused by the embodiment of the present invention from luminescent device, worn by the tapping of the impermeable photo-anode substrate of perforate
Overshoot is in the surface of CNT and inside so that CNT inspires negative electrical charge to anode grid substrate so that CNT
Surface is internally formed positive charge and is delivered to cathode base, avoids the compound of positive and negative electric charge so that anode grid substrate and cathode base
Between form electric current, improve the efficiency of opto-electronic conversion, while this structure can be also used for photodetection field.
As shown in figure 5, optical-electrical converter provided in an embodiment of the present invention be applied to conversion high-energy-density laser beam or
The particle beams, the tapping of the incident beam 9 that need not be converged from the impermeable photo-anode substrate 3 of perforate is mainly radiated CNT
2 surface is internally formed localized regions of elevated temperature area, and wherein localized regions of elevated temperature area can be located at the center or side of multiple CNTs 2
Edge position, due to the optical absorption characteristics of the Proximate blackbody of CNT 2, easily by conducting self-heating to high temperature, have high
Photo-thermal conversion efficiency, so as to excite negative electrical charge 4 (electronics), received by anode grid substrate 3, improve photoelectric transformation efficiency.Selection
The opaque anode grid substrate 3 of perforate can allow incident beam 9 to pass through while ensureing and collecting electronics, in addition, this
Structure laser signal transmission and swashs except for realizing opto-electronic conversion to high energy laser beam, applying also for Laser energy transmission
The photoelectric fields such as optical detection.
Vacuum cavity need not be wherein set to include following two situations：First, when between anode grid substrate and CNT
Distance not short-circuit situation less than 100nm；Second, when optical-electrical converter works in outer space vacuum environment, can not
With setting vacuum cavity.
Embodiment five
Fig. 6 is the flow chart for the opto-electronic conversion method that the embodiment of the present invention five provides.The embodiment of the present invention additionally provides one
Kind opto-electronic conversion method, specific steps include：
S610, Aligned carbon nanotubes film absorption different wave length incident beam energy, in the presence of incident beam
Inspire negative electrical charge.
First choice needs to prepare in growth substrate and growth substrate erect type CNT connected vertically, wherein growing base
Bottom can be the cathode base of optical-electrical converter, and the high density Aligned carbon nanotubes of preparation are close with abundant nano gap, quality
Spend it is extremely low, absorb incident beam after be easily heated to more than 1000 DEG C, excite negative electrical charge (electronics) and generate transmission positive charge
(hole).Wherein incident beam can be sunshine or high energy laser beam of convergence etc..
S620, anode grid substrate receive the negative electrical charge that Aligned carbon nanotubes film inspires, in the table relative with cathode base
Face forms negative potential.
Anode grid substrate can receive the negative electrical charge (electronics) that each CNT inspires, in the table relative with cathode base
Face forms negative potential, it is produced electrical potential difference between cathode base.
Wherein anode grid substrate can be planar transparent anode substrate, perforate transparent anode substrate, the opaque anode of planar
Substrate or the opaque anode grid substrate of perforate, the shape of anode grid substrate is different, and then role also differs translucency difference.
S630, cathode base receive Aligned carbon nanotubes film inspire the positive charge left after negative electrical charge, with anode
The relative surface of substrate forms positive potential；Wherein, each CNT on Aligned carbon nanotubes film is vertical with cathode base
Parallel arrangement between connection and each CNT.
After CNT inspires negative electrical charge (electronics), positive charge (hole) can be formed and be transferred to the moon along CNT
Electrode substrate, it is that the relative surface of anode grid substrate forms positive potential, electrical potential difference is formed between such anode grid substrate and cathode base,
Worked so as to driving load, verify photoelectric conversion process.Wherein photoelectric conversion mode is typically a kind of based under high temperature
Material transmitting hot-electron processes (including solar cell), when the energy of incident photon is more than the work function of CNT (about
4.5eV) cause electron emission.To make carbon nano tube surface or inside localized regions of elevated temperature area occur, it is necessary to irradiate incident beam so that
Local temperature ensures the stable electronics of carbon nanotube emission more than 600 DEG C.
Wherein, cathode base includes planar transparent cathode substrate or the opaque cathode base of planar.Carbon nano-tube film
Including multiple CNTs, each CNT and cathode base vertical connection, and parallel arrangement between each CNT, this
Sample can be shown that the CNT for upright parallel arrangement of preparation.CNT is a kind of excellent electronic emission material, simultaneously
Also the material of black matrix is closest to, there is excellent wide spectrum absorption characteristic, there is extensive use in photoelectric field.
Technical scheme provided in an embodiment of the present invention, the optical absorption characteristics by using CNT close to black matrix can be with
Efficient absorption is carried out to light, because the Aligned carbon nanotubes mass density of preparation is extremely low, is easier to be heated to high temperature reality
The transmitting of existing negative electrical charge, anode grid substrate produces electrical potential difference formation electric current after receiving negative electrical charge between cathode base, so as to drive
Dynamic load works, and realizes the transfer process of photoelectric energy；The transmitting of negative electrical charge, nothing are wherein related only to during electron excitation
Positive charge participates in, and can solve the problems such as positive and negative charge recombination and carrier balance during traditional PN junction cell power generation, Er Qie
In photoelectric conversion process, luminous energy is avoided to transmit heat to heat catalysis, said process is beneficial to the efficiency for improving opto-electronic conversion.
Alternatively, the incident beam that Aligned carbon nanotubes film absorption is formed after being converged by light collection system, is entering
Negative electrical charge is inspired in the presence of irradiating light beam；Wherein, incident beam passes through from planar transparent cathode substrate.
Exemplarily with continued reference to Fig. 3, the sunshine that is converged by light collection system 7 forms incident beam 9, and from face
For shape transparent cathode substrate 1 through the surface or inside for being irradiated to CNT 2, CNT 2 can send stable negative electrical charge 4
(electronics) is received by anode grid substrate 3 so that the surface of CNT 2 is internally formed positive charge and is delivered to cathode base 1, avoids
Positive and negative electric charge it is compound so that form electric current between anode grid substrate 3 and cathode base 1, improve the efficiency of opto-electronic conversion, together
When can be additionally used in collect ground solar energy.
Alternatively, the incident beam that Aligned carbon nanotubes film absorption is formed after being converged by light collection system, is entering
Negative electrical charge is inspired in the presence of irradiating light beam；Wherein, incident beam passes through from the tapping of the opaque anode grid substrate of perforate.
Exemplarily with continued reference to Fig. 4, the sunshine that is converged by light collection system 7 forms incident beam 9, and from opening
The opaque anode grid substrate 3 in hole passes through the surface or inside for being irradiated to CNT 2, and CNT 2 can send stable negative electrical charge 4
(electronics) is received by anode grid substrate 3 so that the surface of CNT 2 is internally formed positive charge and is delivered to cathode base 1, avoids
Positive and negative electric charge it is compound so that form electric current between anode grid substrate 3 and cathode base 1, improve the efficiency of opto-electronic conversion.
Alternatively, Aligned carbon nanotubes film receives incident beam caused by luminescent device, in the presence of incident beam
Inspire negative electrical charge；Wherein, incident beam passes through from the tapping of the opaque anode grid substrate of perforate.
Exemplarily with continued reference to Fig. 5, incident beam 9 caused by luminescent device, pass through the impermeable photo-anode substrate 3 of perforate
Tapping is through radiation in the surface of CNT 2 and inside so that CNT 2 inspires negative electrical charge 4 (electronics) and arrives anode
Substrate 3 so that the surface of CNT 2 is internally formed positive charge and is delivered to cathode base 1, avoids the compound of positive and negative electric charge, makes
Obtain and form electric current between anode grid substrate 3 and cathode base 1, improve the efficiency of opto-electronic conversion, while this structure can be also used for
Photodetection field.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
- A kind of 1. optical-electrical converter, it is characterised in that including：Cathode base, anode grid substrate and Aligned carbon nanotubes film；Its In, each CNT on the Aligned carbon nanotubes film and the cathode base vertical connection and each CNT it Between parallel arrangement；Aligned carbon nanotubes film, the energy of the incident beam for absorbing different wave length, in the presence of the incident beam Inspire negative electrical charge；The anode grid substrate, the negative electrical charge inspired for receiving the Aligned carbon nanotubes film, with the negative electrode The relative surface of substrate forms negative potential；The cathode base, the positive charge left after the negative electrical charge is inspired for receiving the Aligned carbon nanotubes film, Positive potential is formed on the surface relative with the anode grid substrate.
- 2. optical-electrical converter according to claim 1, it is characterised in that the anode grid substrate includes：Planar transparent anode Substrate, perforate transparent anode substrate, the opaque anode grid substrate of planar or the opaque anode grid substrate of perforate；The cathode base bag Include：Planar transparent cathode substrate or the opaque cathode base of planar.
- 3. optical-electrical converter according to claim 2, it is characterised in that the Aligned carbon nanotubes film absorption passes through light The incident beam formed after the convergence of line collecting system, inspires the negative electrical charge in the presence of the incident beam；Its In, the incident beam passes through from the planar transparent cathode substrate.
- 4. optical-electrical converter according to claim 2, it is characterised in that the Aligned carbon nanotubes film absorption passes through light The incident beam formed after the convergence of line collecting system, inspires the negative electrical charge in the presence of the incident beam；Its In, the incident beam passes through from the tapping of the opaque anode grid substrate of the perforate.
- 5. optical-electrical converter according to claim 2, it is characterised in that the Aligned carbon nanotubes film receives photophore The incident beam caused by part, inspires the negative electrical charge in the presence of the incident beam；Wherein, the incident beam Passed through from the tapping of the opaque anode grid substrate of the perforate.
- A kind of 6. opto-electronic conversion method, it is characterised in that including：The energy of the incident beam of Aligned carbon nanotubes film absorption different wave length, is inspired in the presence of the incident beam Negative electrical charge；Anode grid substrate receives the negative electrical charge that the Aligned carbon nanotubes film inspires, on the surface relative with cathode base Form negative potential；The cathode base receives the Aligned carbon nanotubes film and inspires the positive charge left after the negative electrical charge, with institute State the relative surface of anode grid substrate and form positive potential；Wherein, each CNT on the Aligned carbon nanotubes film and institute State parallel arrangement between cathode base vertical connection and each CNT.
- 7. according to the method for claim 6, it is characterised in that the anode grid substrate includes：Planar transparent anode substrate, open Hole transparent anode substrate, the opaque anode grid substrate of planar or the opaque anode grid substrate of perforate；The cathode base includes：Planar Transparent cathode substrate or the opaque cathode base of planar.
- 8. according to the method for claim 7, it is characterised in that the Aligned carbon nanotubes film absorption passes through light collection The incident beam formed after system convergence, inspires the negative electrical charge in the presence of the incident beam；Wherein, it is described Incident beam passes through from the planar transparent cathode substrate.
- 9. according to the method for claim 7, it is characterised in that the Aligned carbon nanotubes film absorption passes through light collection The incident beam formed after system convergence, inspires the negative electrical charge in the presence of the incident beam；Wherein, it is described Incident beam passes through from the tapping of the opaque anode grid substrate of the perforate.
- 10. according to the method for claim 7, it is characterised in that the Aligned carbon nanotubes film receives luminescent device production The raw incident beam, inspires the negative electrical charge in the presence of the incident beam；Wherein, the incident beam is from institute The tapping for stating the opaque anode grid substrate of perforate passes through.
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