CN107731758B - Die bonding method of semiconductor element and semiconductor element - Google Patents
Die bonding method of semiconductor element and semiconductor element Download PDFInfo
- Publication number
- CN107731758B CN107731758B CN201710823265.5A CN201710823265A CN107731758B CN 107731758 B CN107731758 B CN 107731758B CN 201710823265 A CN201710823265 A CN 201710823265A CN 107731758 B CN107731758 B CN 107731758B
- Authority
- CN
- China
- Prior art keywords
- die bonding
- semiconductor element
- semiconductor device
- electrode
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 16
- 231100000719 pollutant Toxicity 0.000 claims abstract description 16
- 238000001179 sorption measurement Methods 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 125000000962 organic group Chemical group 0.000 claims abstract description 7
- 239000007772 electrode material Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000356 contaminant Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 230000000274 adsorptive effect Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83022—Cleaning the bonding area, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83051—Forming additional members, e.g. dam structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Abstract
The invention discloses a die bonding method of a semiconductor element and the semiconductor element, the die bonding method of the semiconductor element provides a protection component with stronger adsorption force to gaseous pollutants or granular pollutants than an electrode material of the semiconductor element, and the component comprises active carbon, porous ceramic or organic groups, so that the electrode is prevented from being polluted in the die bonding process, and the die bonding yield is improved.
Description
Technical Field
The invention relates to a die bonding method of a semiconductor element and a structure of the semiconductor element, belonging to the field of die bonding of semiconductor elements.
Background
With the development of semiconductor device performance, the fabrication of semiconductor devices has become one of the most important fields in recent years. In the manufacturing process of the semiconductor element, the Au gold material becomes the first choice of the last layer in the electrode structure of the semiconductor chip due to its soft texture, stable property and good current spreading effect, and is always the electrode structure commonly used in the industry. However, the weak interaction between Au-Au bonds leads the surface to adsorb a layer of cyclic high nuclear cluster compound, so that the Au provides a medium in the environment where organic matter exists, epoxy silane organic matter is condensed and solidified on the Au surface, the PAD (electrode) surface is polluted during die bonding, and the chip is easy to generate abnormalities such as bonding wires, co-gold and the like in the die bonding link, and the product quality is affected.
Disclosure of Invention
Based on the phenomenon, the invention provides a scheme for solving the problem that suspended pollutants including aerosol pollutants or dust pollutants are attached to the electrode during crystal solidification by using a strong-adsorbability component.
The technical scheme of the invention is as follows: a die bonding method for a semiconductor device having an electrode structure in which a floating contaminant is present in a die bonding region is provided, and a protective member having a stronger adsorption capability to the floating contaminant than an electrode material is provided in the die bonding region in a die bonding process.
Preferably, in the die bonding process, the semiconductor element is fixed by using die bonding glue, and the die bonding glue is heated.
Preferably, the heating temperature is 100-200 ℃, and aerosol-state pollutants can be generated at the temperature.
Preferably, the suspended contaminant comprises a die bond paste or other suspended contaminant particles used for die bonding of semiconductor components.
Preferably, the protective assembly is disposed on the substrate.
Preferably, the semiconductor element has a sidewall, and the protective member is disposed on the sidewall of the semiconductor element.
Preferably, the distance of the protective component from the electrode is less than 300 mm.
Preferably, the electrode material includes Au, Al, Ag, or Ti.
Preferably, the protective component comprises activated carbon, porous ceramic and organic groups.
Preferably, the cutting surface of the semiconductor element is provided with a protective material, and the adsorption capacity of the protective material to the solid crystal glue gas or other suspended pollution particles is stronger than that of the electrode to the solid crystal glue gas.
The invention also provides a semiconductor element, wherein the cutting surface of the semiconductor element is provided with a protective material, and the adsorption capacity of the protective material on solid crystal glue gas or other suspended pollution particles is stronger than that of the electrode on the solid crystal glue gas.
Preferably, the protective material comprises adsorptive materials such as activated carbon, porous ceramics and organic groups.
Preferably, the semiconductor element comprises a light emitting diode, a solar cell or an integrated circuit device.
Preferably, when the semiconductor element is a light emitting diode, the protection component is not located on the light emitting surface of the light emitting diode.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
Fig. 1 is a schematic structural diagram of a semiconductor device according to a first embodiment of the present invention. .
Fig. 2 is a schematic structural diagram of a semiconductor device according to a second embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a semiconductor device according to a third embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a semiconductor device according to a fourth embodiment of the present invention.
In the figure: 100. a semiconductor element; 111/112, electrodes; 120. a substrate; 130. a P-type epitaxial layer; 140. a light emitting layer; 150. an N-type epitaxial layer; 200. a protection component; 300. die bonding glue; 400. and packaging the substrate.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
Example 1
Referring to fig. 1, a die bonding method for a semiconductor device is provided, wherein the semiconductor device 100 comprises a light emitting diode, a solar cell or an integrated circuit device, the semiconductor device 100 has an electrode 111/112, the electrode 111/112 is made of Au, Al, Ag, Ti, or the like, the electrode 111 is a first electrode on a main working surface of the semiconductor device, the electrode 112 is a second electrode disposed on a step surface, suspended pollutants are easy to exist in the atmosphere of the die bonding area, in the die bonding process, the protection assembly 200 with the adsorption capacity stronger than that of the electrode material 111/112 on the suspended pollutants is provided in the die bonding area, the protection assembly 200 is composed of an adsorption material, and the suspended pollutants in the die bonding area are adsorbed by utilizing the good adsorption capacity of the protection assembly 200, so that the influence of the suspended pollutants on the electrode 111/112 is reduced.
Because the die attach process uses the die attach adhesive 300 to fix the semiconductor element 100, the die attach adhesive 300 is heated to remove the solvent in the die attach adhesive 300 and leave the solid solute, so that the solid solute can fix the semiconductor element 100, the heating temperature is 100-. In order to achieve the purification function of the protection assembly 200 for removing suspended pollutants, the adsorptive material of the protection assembly 200 may be selected from materials including activated carbon, porous ceramic, organic group, and the like.
The protective member 200 may be provided on the package substrate 400 to which the semiconductor element 100 is fixed or directly on the semiconductor element 100, or the protective member 200 may be provided in an area less than 300mm from the electrode 111/112 because if it is more than this distance, the protective effect is reduced and the function of the protective member 200 is significantly impaired.
Example 2
Referring to fig. 2, the present embodiment discloses a semiconductor device 100, wherein the semiconductor device 100 includes a light emitting diode, a solar cell or an integrated circuit device. The side far from the chip substrate 120 in the figure is defined as an upper side, the semiconductor element of the embodiment is a front-mounted structure, the electrode is located above the semiconductor element, the semiconductor element 100 is provided with a protective component 200 on the side wall of the step surface, and the protective component 200 comprises a fiber material, activated carbon, porous ceramic and an organic group.
Taking the application of the technical scheme of the invention to the light-emitting diode as an example, the light-emitting diode comprises a P-type epitaxial layer 130, a light-emitting layer 140 and an N-type epitaxial layer 150, wherein a step side wall is arranged between the P-type layer 130 and the N-type layer 150, non-conductive porous ceramics (or other nano-structure electrically-insulating oxides with large specific surface area and adsorbability) are arranged on the step side wall, and the porous ceramics can be selected from materials such as silicate, so that the short-circuit abnormality of the epitaxial layer caused by the leakage of conductive substances can be prevented, and suspended pollutants such as crystal-fixing glue gas and the like generated by crystal fixing during the encapsulation of the light-emitting diode can be adsorbed.
Example 3
Referring to fig. 3, the difference between the present embodiment and embodiment 2 is that the protection device 200 is disposed on the scribe line sidewall of the semiconductor device 100, and the die attach adhesive 300 is disposed below the semiconductor device 100, and the scribe line sidewall is disposed at the middle position between the die attach adhesive 300 and the upper electrode, compared with the embodiment 2, the present embodiment can better avoid the influence of the suspended contaminants such as the die attach adhesive gas on the upper electrode, and greatly reduce the abnormality of the bonding wires or the common electrodes.
Example 4
Referring to fig. 4, in this embodiment, the design of embodiments 2 and 3 is combined, and the protection component 200 is fabricated on both the side wall of the scribe line and the side wall of the step surface, so as to improve the adsorption effect on suspended pollutants and ensure the reliability of the die after die bonding. In addition, in the present embodiment, the protection component 200 having the insulating adsorption material is disposed on the side wall of the cutting street and the side wall of the step surface to perform the insulating protection function.
It is clear that the description of the invention is not to be understood as being limited to the embodiments described above, but to include all possible embodiments utilizing the inventive concept.
Claims (13)
1. A die bonding method for a semiconductor device having an electrode structure with a floating contaminant in a die bonding region, comprising: in the die bonding process, a protection assembly with adsorption capacity stronger than that of an electrode material to suspended pollutants is provided in a die bonding area, the distance between the protection assembly and an electrode is less than 300mm, the protection assembly is made of an adsorption material, and the protection assembly has the function of reducing the adsorption of the suspended pollutants by the electrode in die bonding.
2. The die bonding method of a semiconductor device according to claim 1, wherein: and in the die bonding process, the semiconductor element is fixed by using die bonding glue, and the die bonding glue is heated.
3. The die bonding method of a semiconductor device according to claim 2, wherein: the heating temperature is 100-200 ℃.
4. The die bonding method of a semiconductor device according to claim 1, wherein: the suspended pollutant comprises die bond glue or dust used for die bonding of the semiconductor element.
5. The die bonding method of a semiconductor device according to claim 1, wherein: the semiconductor element has a package substrate, and the protection component is disposed on the package substrate.
6. The die bonding method of a semiconductor device according to claim 1, wherein: the semiconductor element has a sidewall, and the protective member is disposed on the sidewall of the semiconductor element.
7. The die bonding method of a semiconductor device according to claim 1, wherein: the electrode material includes Au, Al, Ag or Ti.
8. The die bonding method of a semiconductor device according to claim 1, wherein: the protective component comprises activated carbon, porous ceramic and organic groups.
9. The die bonding method of a semiconductor device according to claim 1, wherein: the semiconductor element includes a light emitting diode, a solar cell, or an integrated circuit device.
10. A semiconductor device having an electrode structure, characterized in that: the semiconductor element is provided with a protection assembly, the protection assembly is made of adsorptive materials, the adsorption capacity of the protection assembly on the gas of the solid crystal glue is stronger than that of the electrode on the gas of the solid crystal glue, the protection assembly is made of the adsorptive materials, and the protection assembly has the function of reducing the gas of the electrode adsorption glue during solid crystal.
11. A semiconductor component according to claim 10, characterized in that: the protective component comprises activated carbon, porous ceramic and organic groups.
12. A semiconductor component according to claim 10, characterized in that: the semiconductor element includes a light emitting diode, a solar cell, or an integrated circuit device.
13. A semiconductor component according to claim 12, characterized in that: when the semiconductor element is a light emitting diode, the protection component is not positioned on the light emitting surface of the light emitting diode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823265.5A CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
| PCT/CN2018/085130 WO2019052194A1 (en) | 2017-09-13 | 2018-04-28 | Method for die-bonding semiconductor element and semiconductor element |
| US16/816,108 US20200211861A1 (en) | 2017-09-13 | 2020-03-11 | Die bonding process for manufacturing semiconductor device and semiconductor device manufactured thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823265.5A CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107731758A CN107731758A (en) | 2018-02-23 |
| CN107731758B true CN107731758B (en) | 2019-12-06 |
Family
ID=61206087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710823265.5A Active CN107731758B (en) | 2017-09-13 | 2017-09-13 | Die bonding method of semiconductor element and semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107731758B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019052194A1 (en) * | 2017-09-13 | 2019-03-21 | 厦门三安光电有限公司 | Method for die-bonding semiconductor element and semiconductor element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668140A (en) * | 2009-12-18 | 2012-09-12 | 欧司朗光电半导体有限公司 | Optoelectronic component and method for producing an opto-electronic component |
| CN103026512A (en) * | 2010-07-07 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Component and method for producing a component |
| CN105431952A (en) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN206388722U (en) * | 2016-10-11 | 2017-08-08 | 惠州比亚迪实业有限公司 | A kind of light emitting diode |
-
2017
- 2017-09-13 CN CN201710823265.5A patent/CN107731758B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668140A (en) * | 2009-12-18 | 2012-09-12 | 欧司朗光电半导体有限公司 | Optoelectronic component and method for producing an opto-electronic component |
| CN103026512A (en) * | 2010-07-07 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Component and method for producing a component |
| CN105431952A (en) * | 2013-08-08 | 2016-03-23 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for the production thereof |
| CN206388722U (en) * | 2016-10-11 | 2017-08-08 | 惠州比亚迪实业有限公司 | A kind of light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107731758A (en) | 2018-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080178922A1 (en) | Method and system for manufacturing solar panels using an integrated solar cell using a plurality of photovoltaic regions | |
| CN106684227B (en) | A kind of ultraviolet LED method for packing | |
| CN107731758B (en) | Die bonding method of semiconductor element and semiconductor element | |
| CN104465533A (en) | Self-adhesive die | |
| JP2004172160A (en) | Light emitting element | |
| CN102655134A (en) | Power semiconductor device package and fabrication method | |
| CN102255034B (en) | Light emitting diode (LED) packaging structure | |
| JPS62132371A (en) | Solar cell module | |
| CN111106221A (en) | Wafer-level deep ultraviolet LED packaging mode | |
| CN110211885A (en) | Power chip is pre-packaged, packaging method and its structure, wafer pre-package structure | |
| CN214625041U (en) | LED packaging structure | |
| WO2019052194A1 (en) | Method for die-bonding semiconductor element and semiconductor element | |
| CN101704497A (en) | Structure of single-etch tank hermetically packaged by MEMS in wafer level and method thereof | |
| CN2691057Y (en) | Package structure of photosensitive chip | |
| CN220106551U (en) | Photoelectric coupler packaging structure | |
| CN102769004A (en) | Electronic component packaging structure | |
| KR100400028B1 (en) | Power semiconductor device having a chip-on-chip structure | |
| KR101305682B1 (en) | Solar cell apparatus and method of fabricating the same | |
| CN220963364U (en) | Packaging structure of photovoltaic device | |
| CN110277321B (en) | Power chip pre-packaging method, power chip pre-packaging structure, power chip pre-packaging method, power chip pre-packaging structure and wafer pre-packaging structure | |
| CN110246814B (en) | Power chip pre-packaging method, power chip pre-packaging structure, power chip pre-packaging method, power chip pre-packaging structure and wafer pre-packaging structure | |
| CN102468402A (en) | Light-emitting diode packaging structure, and manufacturing method thereof | |
| CN204946933U (en) | With the integrated form COB encapsulating structure of purple light UV wave band LED wafer | |
| CN116364798A (en) | Battery packaging structure and packaging method | |
| CN202153539U (en) | Semiconductor light emitting diode secondary packaging member connected by bonding filamentary silver |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231017 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |