CN107731597A - A kind of method for improving electrical contact material surface contact conditions - Google Patents
A kind of method for improving electrical contact material surface contact conditions Download PDFInfo
- Publication number
- CN107731597A CN107731597A CN201711023709.3A CN201711023709A CN107731597A CN 107731597 A CN107731597 A CN 107731597A CN 201711023709 A CN201711023709 A CN 201711023709A CN 107731597 A CN107731597 A CN 107731597A
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- China
- Prior art keywords
- contact material
- electrical contact
- material surface
- plasma
- gas
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
- H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture Of Switches (AREA)
Abstract
The invention discloses a kind of method for improving electrical contact material surface contact conditions, high-energy low-temperature plasma body is acted on into contact material surface, changes the chemistry and physical state on its surface, so as to effectively reduce contact material contact resistance.At the same time, this method does not consume water resource, environment-friendly without using chemical reagent such as ethanol.
Description
Technical field
The present invention relates to electrical contact material field, in particular to a kind of side for improving electrical contact material surface contact conditions
Method.
Background technology
Contact material requires very high because of the particularity of its application scenarios to surface contacted resistance.Generally, contact material
Expect surface contacted resistance one to two orders of magnitude higher than bulk resistor, be to influence electrical installation heating, or even the key of contact melting welding
Factor.The contact resistance on contact material surface is mainly made up of two parts：The film resistance of metal surface and by rough surface band
The contraction protein come.The factor for influenceing contact material surface contacted resistance has a lot, such as：Contact material Superficial Foreign Body and metal
Oxide layer can increase film resistance；The lifting of contact material surface roughness can increase contraction protein during contact；Material surface hardness
Higher, under uniform pressure, effective contact area diminishes between contact, and contact resistance can also increase.
Generally, to reduce contact material surface contacted resistance, a series of post-processing operation can be implemented to material, including it is logical
Over cleaning removes surface and oil contaminant, and surface oxide layer is removed by pickling, and material surface roughness etc. is reduced by grinding.But
It is, on the one hand, the dirt-removing power routinely cleaned is limited, and the drying course after pickling can form thin oxidation again in material surface
Film；On the other hand, it is micro- for surface although conventional grinding process can reduce material surface roughness to a certain extent
Rice, the peak valley of submicron order are but difficult to play a role.To sum up, conventional contact material process of surface treatment is due to technique itself
Defect, great bottleneck is encountered on material surface contact resistance is reduced.
The content of the invention
The invention aims to overcome shortcoming and defect existing for prior art, and electric touch can be reduced by providing one kind
A kind of method of improvement electrical contact material surface contact conditions of head material surface contacted resistance.
To achieve the above object, the technical scheme is that comprising the following steps：
(1) pending electrical contact material is placed in the container with plasma producing apparatus；
(2) plasma source of the gas is filled with a reservoir, is opened plasma producing apparatus, is immersed in electrical contact material surface
In ion atmosphere；
（3）Plasma atmosphere is kept, electrical contact material surface is bombarded by low temperature plasma, removes electrical contact material surface
Foreign matter and oxide-film, while cause electrical contact material top layer conducting metal fusing recrystallization；
（4）During plasma treatment, electrical contact material is moved or rotated in container；
（5）Plasma producing apparatus is closed, takes out electrical contact material product.
Further set is plasma atmosphere for the one or more in oxygen, nitrogen, hydrogen, argon gas.
It is that plasma producing apparatus is produced by gas glow discharge or dielectric barrier discharge mode further to set
Ionized gas.
The present invention's has the advantages that：
This method breaches the bottleneck of original contact material surface treatment, further significantly reduces the surface contact electricity of material
Resistance：
1) first, high energy plasma gas has larger kinetic energy and ionization energy, acts on contact material surface, can will be by preceding
The thin oxide layer of the foreign matters such as the greasy dirt, the filament that are covered in contact surface that sequence process bands are come and metal decomposes or bombardment is fallen, from
And contact material contact film resistance is greatly reduced；
2) secondly, high energy plasma gas bombardment contact material surface, higher temperature can be produced in material surface, makes contact material
Expect top layer（Depth is no more than 1um）Conducting metal fusing recrystallization, so as to it is floating by preamble process bands Lai material surface it is micro-
The peak and valley in area, microcell roughness is greatly reduced, increases effective contact area, reduce contraction protein；
3) again, contact surface conducting metal fusing recrystallization process in, by preamble process bands come material internal processing answer
Power is effectively discharged, while the manufacturing deficiency such as dislocation inside the region material, micropore obtains repairing largely, from
And contact top layer conducting metal hardness is effectively reduced, effective contact area when adding switch closure between contact, reduction connects
Get an electric shock and hinder, while have substantially no effect on matrix material hardness；
4) finally, this method does not consume water resource, environment-friendly without using chemical reagent such as ethanol, degreasers.
The present invention is described further with reference to embodiment.
Brief description of the drawings
The compares figure before and after the processing of Fig. 1 the present embodiment 1（In Fig. 1, after left figure is processing, right figure is before processing）；
The variation relation figure of the contact surface contact resistance before and after the processing of Fig. 2 the present embodiment 1.
Embodiment
The present invention is specifically described below by embodiment, is served only for that the present invention is further described, no
It is understood that for limiting the scope of the present invention, the technician in the field can be according to the content of foregoing invention to the present invention
Make some nonessential modifications and adaptations.
Embodiment one：
5Kg electrical contact material product is laid in quartz glass ware, is placed in the cavity with plasma producing apparatus
It is interior；Cavity is sealed, is evacuated to intracavitary air pressure<1Pa；Keep vavuum pump to open, be passed through air to intracavitary, pass through proton flow
Meter controls total gas flow rate in 60sccm, while by controlling vavuum pump, ensures intracavitary stable gas pressure in 200 ~ 300Pa；Open
The radio frequency generator of plasma producing apparatus is opened, applies the rf electric field that frequency is 13.56MHz, radio frequency electrical to annular seal space
Power setting be 200w, produces stable plasma gas in cavity, after duration 10min, closing rf electric field；Stop
Gas is passed through, slowly releases vacuum, takes out product.
Embodiment two：
By 10Kg 5 parts of electrical contact material production sharing, it is laid in 5 quartz glass wares, is placed in plasma respectively
In the cavity of body generating means；Cavity is sealed, is evacuated to intracavitary air pressure<1Pa；Keep vavuum pump to open, be passed through to intracavitary
The mixed gas of argon gas and hydrogen, argon gas flow is controlled by proton flowmeter and existed in 60sccm, hydrogen flowing quantity control
20sccm, while by controlling vavuum pump, ensure intracavitary stable gas pressure in 300 ~ 350Pa；Radio frequency generator is opened, to sealing
Chamber applies the rf electric field that frequency is 13.56MHz, and rf electric field power setting is 300w, and stable plasma is produced in cavity
Gas, after duration 25min, close rf electric field；Stopping is passed through gas, slowly releases vacuum, takes out product.
Claims (3)
- A kind of 1. method for improving electrical contact material surface contact conditions, it is characterised in that comprise the following steps：(1) pending electrical contact material is placed in the container with plasma producing apparatus；(2) be filled with plasma source of the gas in a reservoir, open plasma producing apparatus, make electrical contact material surface be immersed in etc. from In sub- atmosphere；（3）Plasma atmosphere is kept, electrical contact material surface is bombarded by low temperature plasma, removes electrical contact material surface Foreign matter and oxide-film, while cause electrical contact material top layer conducting metal fusing recrystallization；（4）During plasma treatment, electrical contact material is moved or rotated in container；（5）Plasma producing apparatus is closed, takes out electrical contact material product.
- A kind of 2. method for improving electrical contact material surface contact conditions according to claim 1, it is characterised in that：Deng from Sub- source of the gas is the one or more in air, oxygen, nitrogen, hydrogen, argon gas.
- A kind of 3. method for improving electrical contact material surface contact conditions according to claim 1, it is characterised in that：Deng from Daughter generating means produces plasma gas by gas glow discharge or dielectric barrier discharge mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023709.3A CN107731597A (en) | 2017-10-27 | 2017-10-27 | A kind of method for improving electrical contact material surface contact conditions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711023709.3A CN107731597A (en) | 2017-10-27 | 2017-10-27 | A kind of method for improving electrical contact material surface contact conditions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107731597A true CN107731597A (en) | 2018-02-23 |
Family
ID=61203096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711023709.3A Pending CN107731597A (en) | 2017-10-27 | 2017-10-27 | A kind of method for improving electrical contact material surface contact conditions |
Country Status (1)
| Country | Link |
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| CN (1) | CN107731597A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111185590A (en) * | 2020-01-10 | 2020-05-22 | 烟台南山学院 | Method for preparing highly ordered silver nanochain structure based on low-temperature plasma |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4723589A (en) * | 1986-05-19 | 1988-02-09 | Westinghouse Electric Corp. | Method for making vacuum interrupter contacts by spray deposition |
| JPH05282956A (en) * | 1992-03-31 | 1993-10-29 | Shinano Polymer Kk | Manufacture of rubber switch cover member |
| CN101083204A (en) * | 2006-05-30 | 2007-12-05 | 诺信公司 | Methods for removing extraneous amounts of molding material from a substrate |
| CN102191471A (en) * | 2010-03-11 | 2011-09-21 | 秦旷宇 | Novel production method of contact surface of electric appliance through plasma magnetron sputtering |
| CN104894515A (en) * | 2015-05-27 | 2015-09-09 | 陕西斯瑞工业有限责任公司 | Electric-arc ion plating method for forming CuCr coating on surface of CuCr contact |
-
2017
- 2017-10-27 CN CN201711023709.3A patent/CN107731597A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4723589A (en) * | 1986-05-19 | 1988-02-09 | Westinghouse Electric Corp. | Method for making vacuum interrupter contacts by spray deposition |
| JPH05282956A (en) * | 1992-03-31 | 1993-10-29 | Shinano Polymer Kk | Manufacture of rubber switch cover member |
| CN101083204A (en) * | 2006-05-30 | 2007-12-05 | 诺信公司 | Methods for removing extraneous amounts of molding material from a substrate |
| CN102191471A (en) * | 2010-03-11 | 2011-09-21 | 秦旷宇 | Novel production method of contact surface of electric appliance through plasma magnetron sputtering |
| CN104894515A (en) * | 2015-05-27 | 2015-09-09 | 陕西斯瑞工业有限责任公司 | Electric-arc ion plating method for forming CuCr coating on surface of CuCr contact |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111185590A (en) * | 2020-01-10 | 2020-05-22 | 烟台南山学院 | Method for preparing highly ordered silver nanochain structure based on low-temperature plasma |
| CN111185590B (en) * | 2020-01-10 | 2022-02-01 | 烟台南山学院 | Method for preparing highly ordered silver nanochain structure based on low-temperature plasma |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180223 |
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| RJ01 | Rejection of invention patent application after publication |