CN107731524A - Thin film capacitor and preparation method thereof - Google Patents
Thin film capacitor and preparation method thereof Download PDFInfo
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- CN107731524A CN107731524A CN201610651520.8A CN201610651520A CN107731524A CN 107731524 A CN107731524 A CN 107731524A CN 201610651520 A CN201610651520 A CN 201610651520A CN 107731524 A CN107731524 A CN 107731524A
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- metal level
- insulating barrier
- coated
- processing module
- machining area
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- 239000003990 capacitor Substances 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 131
- 230000004888 barrier function Effects 0.000 claims abstract description 122
- 238000003754 machining Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 32
- 239000000084 colloidal system Substances 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Abstract
The present invention discloses a kind of thin film capacitor and preparation method thereof.The preparation method of thin film capacitor includes：First, a bearing substrate is placed on a machine table, wherein machine table has multiple machining areas along a plane formula production line sequential；Then, formed and be alternately stacked multiple metal levels and multiple insulating barriers on bearing substrate, to complete the making of a multiple field stacked structure；Then, two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of multiple field stacked structure.Therefore, the present invention passes through the processing of machine table so that multiple metal levels and multiple insulating barriers can be alternately stacked on bearing substrate, whereby to complete the making of the multiple field stacked structure of thin film capacitor.
Description
Technical field
The present invention relates to a kind of capacitor and preparation method thereof, more particularly to a kind of thin film capacitor and its making side
Method.
Background technology
Capacitor has been widely used for consumer electrical home appliances, computer motherboard and its periphery, power supply unit, led to
The basic module of product and automobile etc. is interrogated, its main effect includes：Filtering, bypass, rectification, coupling, decoupling, phase inversion etc..It is
One of indispensable component in electronic product.Capacitor has different kenels according to different material and purposes.Including aluminum
Electrochemical capacitor, tantalum matter electrochemical capacitor, laminated ceramic electric capacity, thin-film capacitor etc..In the prior art, for making thin-film capacitor
Production method is excessively complicated and needs to improve, and according to the thin-film capacitor made by prior art out overall structure also excessively
It is complicated and need to improve.
The content of the invention
The technical problems to be solved by the invention are, provide in view of the shortcomings of the prior art a kind of thin film capacitor and its
Preparation method.
In order to solve above-mentioned technical problem, a wherein technical scheme of the present invention is to provide a kind of thin-film electro
The preparation method of container, it includes：First, a bearing substrate is placed on a machine table, wherein, the machine table tool
There are multiple machining areas along a plane formula production line sequential, and in each described machining area of the machine table
Including a metal level processing module and an insulating barrier processing module；Then, the institute in the 1st machining area is passed through
Metal level processing module is stated, to be coated with one the 1st metal level on the bearing substrate；Then, by adding positioned at described in the 1st
The insulating barrier processing module in the domain of work area, to be coated with one the 1st insulating barrier in the 1st institute of covering on the bearing substrate
State metal level；Next, n times repeat step is sequentially performed, to complete the making of a multiple field stacked structure；Finally, two are formed
Individual end-electrode structure, tossed about end with being respectively coated by the two-phase of the multiple field stacked structure.For further, described in n times
The order of repeat step is the 1st, 2,3 ..., n times, and each described repeat step includes：First, by positioned at N+1
The metal level processing module in the machining area, to be coated with the N+1 metal level on the n-th insulating barrier
Cover the n-th metal level；Then, by the insulating barrier processing module in N+1 machining areas, with
The N+1 insulating barrier is coated with N+1 metal levels of covering on the n-th insulating barrier.
Further, each described metal level processing module includes metal level coating module and one first baking
Module, and each described insulating barrier processing module includes insulating barrier coating module and one second baking module.
Further, by the metal level processing module in the 1st machining area, to be coated with
1 metal level still further comprises in the step on the bearing substrate：First, by positioned at the 1st processing
Metal level coating module in region, to be coated with the 1st metal level on the bearing substrate；Then, position is passed through
First baking module in the 1st machining area, to toast the 1st metal level.
Further, by the insulating barrier processing module in the 1st machining area, to be coated with
1 insulating barrier still further comprises in the step of covering the 1st metal level on the bearing substrate：First,
Module is coated with by the insulating barrier in the 1st machining area, held with being coated with the 1st insulating barrier in described
The 1st metal level is covered on carried base board；Then, second baking in the 1st machining area is passed through
Module, to toast the 1st insulating barrier.
Further, by the metal level processing module in N+1 machining areas, with coating
The N+1 metal levels also further wrap in the step of covering the n-th metal level on the n-th insulating barrier
Include：First, module is coated with by the metal level in the N+1 machining areas, to be coated with the N+1 gold
Category layer on the n-th insulating barrier in covering the n-th metal level；Then, by positioned at the N+1 machining areas
Interior first baking module, to toast the N+1 metal levels.
Further, by the insulating barrier processing module in N+1 machining areas, with coating
The N+1 insulating barriers are also further in the step of covering the N+1 metal levels on the n-th insulating barrier
Including：First, module is coated with by the insulating barrier in the N+1 machining areas, it is described to be coated with N+1
Insulating barrier on the n-th insulating barrier in covering the N+1 metal level；Then, by positioned at the N+1 processing
Second baking module in region, to toast the N+1 insulating barriers.
In order to solve above-mentioned technical problem, an other technical scheme of the present invention is to provide a kind of thin-film electro
The preparation method of container, it includes：First, a bearing substrate is placed on a machine table, wherein, the machine table tool
There is an at least machining area, include sequentially arranging along a plane formula production line at least one machining area of the machine table
A metal level processing module and an insulating barrier processing module for row；Then, the institute at least one machining area is passed through
The metal level processing module of machine table is stated, to form multiple metal levels, and by least one machining area
The machine table the insulating barrier processing module, to form multiple insulating barriers, the plurality of metal level and more
The individual insulating barrier is alternately stacked on the bearing substrate, to complete the making of a multiple field stacked structure；Then, formed
Two end-electrode structures, tossed about end with being respectively coated by the two-phase of the multiple field stacked structure.
Further, the machine table includes one and is used to point-blank drive the bearing substrate by least described in one
The transmission mechanism of machining area, and a room temperature environment is provided at least one machining area, wherein, the metal level processing mould
Block includes metal level coating module and first baking for toasting the metal level for being used to form the metal level
Module, and the insulating barrier processing module includes an insulating barrier coating module and one for being used to form the insulating barrier for drying
The second baking module of the insulating barrier is baked, wherein, each described end-electrode structure includes one and is used to coat the multiple field
First clad of the side end of stacked structure, one are used for the second clad for coating first clad and a use
In the 3rd clad for coating second clad, wherein, the plane formula production line is a flat annular line.
In order to solve above-mentioned technical problem, yet another aspect in addition of the present invention is to provide a kind of film
Capacitor, it includes：Pass through the multiple field stacked structure and two end-electrode structures produced by a machine table.It is described
Multiple field stacked structure includes a bearing substrate, multiple metal levels and multiple insulating barriers, and multiple metal levels and more
The individual insulating barrier is alternately stacked on the bearing substrate.Two end-electrode structures are respectively coated by the multiple field heap
The two-phase of stack structure is tossed about end.Wherein, the machine table has multiple processing along a plane formula production line sequential
Region, and include a gold for being used to form the corresponding metal level in each described machining area of the machine table
Category layer processing module and an insulating barrier processing module for forming the corresponding insulating barrier.
Further, each described end-electrode structure includes one for coating the described of the multiple field stacked structure
The second clad and one that first clad of side end, one are used to coat first clad is for coating described second
3rd clad of clad, wherein, the multiple field stacked structure and two end-electrode structures are all by a packaging plastic
Body is coated, and two conductive pins distinguish two end-electrode structures in electrical contact and it is exposed from the packing colloid and
Go out.
The beneficial effects of the present invention are, thin film capacitor that technical solution of the present invention is provided and preparation method thereof, its
" machine table has multiple machining areas along a plane formula production line sequential " and " processing machine can be passed through
Including a metal level processing module and an insulating barrier processing module in each machining area of platform " technical characteristic so that
Multiple metal levels and multiple insulating barriers can be alternately stacked on the bearing substrate, whereby to complete film
The making of the multiple field stacked structure of capacitor.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, however the accompanying drawing provided be merely provided for refer to explanation, not be used for the present invention is any limitation as.
Brief description of the drawings
Fig. 1 is the flow chart of a portion of the preparation method of thin film capacitor of the present invention.
Fig. 2 is the flow chart of the another part of the preparation method of thin film capacitor of the present invention.
Fig. 3 is the functional block diagram of machine table of the present invention.
Fig. 4 is the schematic diagram of machine table of the present invention.
Fig. 5 is metal level processing module and insulating barrier processing module in the 1st machining area of machine table of the present invention
Schematic diagram.
Fig. 6 is metal level processing module and insulating barrier processing module in the 2nd machining area of machine table of the present invention
Schematic diagram.
Fig. 7 is metal level processing module and insulating barrier processing module in the 3rd machining area of machine table of the present invention
Schematic diagram.
Fig. 8 is the diagrammatic cross-section of thin film capacitor of the present invention.
Fig. 9 is the diagrammatic cross-section that thin film capacitor of the present invention is applied to the first thin film capacitor encapsulating structure.
Figure 10 is the diagrammatic cross-section that thin film capacitor of the present invention is applied to second of thin film capacitor encapsulating structure.
Embodiment
It is to illustrate presently disclosed relevant " thin film capacitor and its making side by particular specific embodiment below
The embodiment of method ", those skilled in the art can understand advantages of the present invention and effect by content disclosed in this specification.This
Invention can be implemented or applied by other different specific embodiments, and the various details in this specification may be based on difference
Viewpoint and application, in the lower various modifications of progress without departing from the spirit and change.In addition, the accompanying drawing of the present invention is only simple
It is schematically illustrate, not according to the description of actual size, stated.Following embodiment will be explained in further detail the present invention's
Correlation technique content, but disclosure of that and the technical scope for being not used to the limitation present invention.
Refer to shown in Fig. 1 to Fig. 8, the present invention provides a kind of thin film capacitor Z preparation method, and it includes：First, match somebody with somebody
Close shown in Fig. 1 to Fig. 5, a bearing substrate 10 is placed on a machine table M, wherein machine table M has multiple flat along one
The machining area R of face formula production line sequential, and add in machine table M each machining area R including a metal level
A work module X and insulating barrier processing module Y (S100)；Then, coordinate shown in Fig. 1, Fig. 2, Fig. 3 and Fig. 5, by positioned at the
Metal level processing module X in 1 machining area R (R1), to be coated with one the 1st metal level 11 on bearing substrate 10
(S102)；Then, coordinate shown in Fig. 1, Fig. 2, Fig. 3 and Fig. 5, added by the insulating barrier in the 1st machining area R (R1)
Work module Y, to be coated with one the 1st insulating barrier 12 in the 1st metal level 11 (S104) of covering on bearing substrate 10；Then, match somebody with somebody
Close shown in Fig. 1 to Fig. 4 and Fig. 6 to Fig. 8, sequentially perform n times repeat step, to complete the making of a multiple field stacked structure 1,
Wherein the order of n times repeat step be the 1st, 2,3 ..., n times.It is worth noting that, coating used in above-mentioned steps
(coating) can also be replaced using spraying (spraying) or printing (printing).
First, especially to illustrate that, for example, as shown in figure 4, multiple machining area R can give birth to along a plane formula
Producing line sequential, that is to say, that this plane formula production line does not have too big high low head.In addition, this plane formula produces
Line can be straight line or non-rectilinear production line or the production line for encompassing a circle.Furthermore machine table M includes one
For point-blank drive bearing substrate 10 sequentially by multiple machining area R transmission mechanism T (such as using transmission belt coordinate it is more
Individual roller bearing drives), and can provide a room temperature environment in each machining area R, that is to say, that in each machining area R
A vacuum environment need not be additionally provided, as long as but providing about 25 DEG C of normal temperature working environment.
Furthermore, for example, coordinate shown in Fig. 3 and Fig. 5, each metal level processing module X includes one and is used to be formed
The metal level coating modules A of metal level 11 and a first baking module B for toasting formed metal level 11, and often
One insulating barrier processing module Y includes an insulating barrier coating module C and one for being used to be formed insulating barrier 12 and is used to toast institute's shape
Into insulating barrier 12 the second baking module D.
For further, coordinate shown in Fig. 1 to Fig. 5, passing through the metal level in the 1st machining area R (R1)
Processing module X, to be coated with the 1st metal level 11 in the step S102 on bearing substrate 10, still further comprise：First, lead to
The metal level coating modules A crossed in the 1st machining area R (R1), to be coated with the 1st metal level 11 on bearing substrate 10
(S102a)；Then, by the first baking module B in the 1st machining area R (R1), to toast the 1st metal level 11
(S102b), whereby to cause metal level 11 to be hardened.
From the above, coordinate shown in Fig. 1 to Fig. 5, processed by the insulating barrier in the 1st machining area R (R1)
Module Y, to be coated with the 1st insulating barrier 12 in the step S104 on the 1st metal level 11, still further comprise：First, pass through
Insulating barrier coating module C in the 1st machining area R (R1), to be coated with the 1st insulating barrier 12 on bearing substrate 10
Cover the 1st metal level 11 (S104a)；Then, by the second baking module D in the 1st machining area R (R1), with
The 1st insulating barrier 12 (S104b) is toasted, whereby to cause insulating barrier 12 to be hardened.
For further, coordinate shown in Fig. 1 to Fig. 7, in sequentially n times repeat step is performed, each repeat step
Including：First, by the metal level processing module X in the N+1 machining area R, to be coated with the N+1 metal level 11
In covering n-th metal level 11 (S106) on n-th insulating barrier 12；Then, by the N+1 machining area R
Insulating barrier processing module Y, to be coated with the N+1 insulating barrier 12 in the N+1 metal level 11 of covering on n-th insulating barrier 12
(S108)。
For further, coordinate shown in Fig. 1 to Fig. 7, add by the metal level in the N+1 machining area R
Work module X, to be coated with the N+1 metal level 11 in the step of covering n-th metal level 11 on n-th insulating barrier 12, also
Further comprise：First, modules A is coated with by the metal level in the N+1 machining area R, to be coated with the N+1 metal
Layer 11 on n-th insulating barrier 12 in covering n-th metal level 11 (S106a)；Then, by positioned at the N+1 machining area R
The first interior baking module B, to toast the N+1 metal level 11 (S106b), whereby to cause the N+1 metal level 11 hard
Change.Furthermore by the insulating barrier processing module Y in the N+1 machining area R, be coated with the N+1 insulating barrier 12 in
In the step of covering the N+1 metal level 11 on n-th insulating barrier 12, still further comprise：First, by positioned at N+1
Insulating barrier coating module C in individual machining area R, to be coated with the N+1 insulating barrier 12 in covering the on n-th insulating barrier 12
N+1 metal level 11 (S108a)；Then, by the second baking module D in the N+1 machining area R, to toast N
+ 1 insulating barrier 12 (S108b), whereby to cause the N+1 insulating barrier 12 to be hardened.
For example, coordinate shown in Fig. 2, Fig. 4 and Fig. 6, (the 1st repeat step is namely performed) as N=1, it is first
First, modules A is coated with by the metal level in the 2nd machining area R (R2), it is exhausted in the 1st to be coated with the 2nd metal level 11
The 1st metal level 11 is covered in edge layer 12；Then, by the first baking module B in the 2nd machining area R (R2),
To toast the 2nd metal level 11；Then, module C is coated with by the insulating barrier in the 2nd machining area R (R2), with coating
2nd insulating barrier 12 is in the 2nd metal level 11 of covering on the 1st insulating barrier 12；Then, by positioned at the 2nd machining area R
(R2) the second baking module D in, to toast the 2nd insulating barrier 12, whereby to cause the 2nd insulating barrier 12 to be hardened.
From the above, coordinate shown in Fig. 2, Fig. 4 and Fig. 7, (the 2nd repeat step is namely performed) as N=2, it is first
First, modules A is coated with by the metal level in the 3rd machining area R (R3), it is exhausted in the 2nd to be coated with the 3rd metal level 11
The 2nd metal level 11 is covered in edge layer 12；Then, by the first baking module B in the 3rd machining area R (R3),
To toast the 3rd metal level 11；Then, module C is coated with by the insulating barrier in the 3rd machining area R (R3), with coating
3rd insulating barrier 12 is in the 3rd metal level 11 of covering on the 2nd insulating barrier 12；Then, by positioned at the 3rd machining area R
(R3) the second baking module D in, to toast the 3rd insulating barrier 12, whereby to cause the 3rd insulating barrier 12 to be hardened.
Furthermore coordinate shown in Fig. 1, Fig. 2 and Fig. 8, after sequentially n times repeat step is performed, still further comprise：Shape
Into two end-electrode structures 2, tossed about end 20P (S110) with being respectively coated by the two-phase of multiple field stacked structure 1, to complete film
Capacitor Z making.For example, each end-electrode structure 2 includes a side end for being used to coat multiple field stacked structure 1
The second clad 22 and one that 20P the first clad 21, one is used to coat the first clad 21 is used to coat the second cladding
3rd clad 23 of layer 22.In addition, the first clad 21, the second clad 22 and the 3rd clad 23 can be respectively silver
Layer, nickel dam and tin layers, but the present invention is not illustrated with this and is limited.
In summary, coordinate shown in Fig. 1 to Fig. 8, the present invention provides a kind of thin film capacitor Z preparation method, and it includes：
First, a bearing substrate 10 is placed on a machine table M, wherein machine table M has multiple along a plane formula production line
It is exhausted to include a metal level processing module X and one in the machining area R of sequential, machine table M each machining area R
Edge layer processing module Y；Then, by machine table M multiple metal level processing module X, to form multiple metal levels 11 respectively,
And by machine table M multiple insulating barrier processing module Y, to form multiple insulating barriers 12, plurality of metal level 11 respectively
And multiple insulating barriers 12 are alternately stacked on bearing substrate 10, to complete the making of a multiple field stacked structure 1；Then,
Two end-electrode structures 2 are formed, are tossed about end 20P with being respectively coated by the two-phase of multiple field stacked structure 1.Whereby, such as Fig. 8 institutes
Show, the present invention provides a kind of thin film capacitor Z, and it includes：One multiple field stacked structure 1 and two end-electrode structures 2.Multilayer
Formula stacked structure 1 includes a bearing substrate 10, multiple metal levels 11 and multiple insulating barriers 12, and multiple metal levels 11 and
Multiple insulating barriers 12 are alternately stacked on bearing substrate 10.In addition, two end-electrode structures 2, which are respectively coated by multiple field, stacks knot
The two-phase of structure 1 is tossed about end 20P.
It is worth noting that, in the other possible embodiments of the present invention, machine table M can be with least one processing
Include processing along a metal level of a plane formula production line sequential in region R, machine table M an at least machining area R
A module X and insulating barrier processing module Y, and plane formula production line can be a flat annular line.
What deserves to be explained is lifting for wherein one, coordinate shown in Fig. 8 and Fig. 9, thin film capacitor Z can first allow one
Packing colloid P (can be as made by insulating materials) is packaged, and then will be electrically connected at thin film capacitor Z two conductions again
Pin L extends to packing colloid P outside from thin film capacitor Z, whereby to complete one of which thin film capacitor encapsulating structure
Making.In addition, lift it is other coordinate shown in Fig. 8 and Figure 10 for one, thin film capacitor Z can first allow a packing colloid P
It is packaged, then the thin film capacitor Z packaged by packed colloid P is contained in a metal shell H (such as aluminum hull) again,
Two conductive pin L for being electrically connected at thin film capacitor Z are finally extended into the outer of metal shell H from thin film capacitor Z again
Portion, whereby to complete the making of another thin film capacitor encapsulating structure.That is, multiple field stacked structure 1 and two
End-electrode structure 2 can all be coated by a packing colloid P, and two conductive pin L can distinguish two termination electrode knots in electrical contact
Structure 2 and exposed from packing colloid P and go out.However, the present invention thin film capacitor encapsulating structure not using above-mentioned institute's illustrated example as
Limit.
In summary, the beneficial effects of the present invention are the thin film capacitor Z and its system that technical solution of the present invention is provided
Make method, it can be by the way that " machine table M has multiple machining area R " along a plane formula production line sequential and " added
The technology including an a metal level processing module X and insulating barrier processing module Y " is special in work board M each machining area R
Sign so that multiple metal levels 11 and multiple insulating barriers 12 can be alternately stacked on bearing substrate 10, thin to complete whereby
The making of membrane capacitance Z multiple field stacked structure 1.
Content disclosed above is only the preferred possible embodiments of the present invention, and the right for not thereby limiting to the present invention will
The protection domain asked, so every equivalence techniques change done with description of the invention and accompanying drawing content, is both contained in this
In the scope of the claims of invention.
Claims (10)
1. a kind of preparation method of thin film capacitor, it is characterised in that the preparation method of the thin film capacitor includes：
One bearing substrate is placed on a machine table, wherein, the machine table has multiple along a plane formula production line
The machining area of sequential, and the machine table each described machining area in include a metal level processing module with
An and insulating barrier processing module；
By the metal level processing module in the 1st machining area, to be coated with one the 1st metal level in described
On bearing substrate；
By the insulating barrier processing module in the 1st machining area, to be coated with one the 1st insulating barrier in described
The 1st metal level is covered on bearing substrate；
Sequentially perform n times repeat step, with complete a multiple field stacked structure making, wherein, repeat step described in n times it is suitable
Sequence is the 1st, 2,3 ..., n times, and each described repeat step includes：
By the metal level processing module in N+1 machining areas, be coated with the N+1 metal level in
N-th metal level is covered on n-th insulating barrier；And
By the insulating barrier processing module in N+1 machining areas, be coated with the N+1 insulating barrier in
The N+1 metal level is covered on the n-th insulating barrier；And
Two end-electrode structures are formed, to be respectively coated by two opposite side ends of the multiple field stacked structure.
2. the preparation method of thin film capacitor according to claim 1, it is characterised in that the machine table includes one and used
In the transmission mechanism for point-blank driving the bearing substrate sequentially to pass through multiple machining areas, and each described processing district
One room temperature environment is provided in domain, wherein, each described metal level processing module includes metal level coating module and one the
One baking module, and each described insulating barrier processing module includes insulating barrier coating module and one second baking module,
Wherein, each described end-electrode structure includes first bag for being used to coat the side end of the multiple field stacked structure
Coating, one are used for the second clad for coating first clad and the three guarantees for coating second clad
Coating.
3. the preparation method of thin film capacitor according to claim 2, it is characterised in that by positioned at described in the 1st
The metal level processing module in machining area, to be coated with the 1st metal level in the step on the bearing substrate,
Still further comprise：
Module is coated with by the metal level in the 1st machining area, to be coated with the 1st metal level in institute
State on bearing substrate；And
By first baking module in the 1st machining area, to toast the 1st metal level.
4. the preparation method of thin film capacitor according to claim 2, it is characterised in that by positioned at described in the 1st
The insulating barrier processing module in machining area, to be coated with the 1st insulating barrier in covering institute on the bearing substrate
In the step of stating the 1st metal level, still further comprise：
Module is coated with by the insulating barrier in the 1st machining area, to be coated with the 1st insulating barrier in institute
State on bearing substrate and cover the 1st metal level；And
By second baking module in the 1st machining area, to toast the 1st insulating barrier.
5. the preparation method of thin film capacitor according to claim 2, it is characterised in that by positioned at the N+1 institute
State the metal level processing module in machining area, to be coated with the N+1 metal level on the n-th insulating barrier and
In the step of covering the n-th metal level, still further comprise：
Module is coated with by the metal level in the N+1 machining areas, to be coated with the N+1 metal level
In covering the n-th metal level on the n-th insulating barrier；And
By first baking module in the N+1 machining areas, to toast the N+1 metal level.
6. the preparation method of thin film capacitor according to claim 2, it is characterised in that by positioned at the N+1 institute
State the insulating barrier processing module in machining area, to be coated with the N+1 insulating barrier on the n-th insulating barrier and
In the step of covering the N+1 metal level, still further comprise：
Module is coated with by the insulating barrier in the N+1 machining areas, to be coated with the N+1 insulating barrier
In covering the N+1 metal level on the n-th insulating barrier；And
By second baking module in the N+1 machining areas, to toast the N+1 insulating barrier.
7. a kind of preparation method of thin film capacitor, it is characterised in that the preparation method of described thin film capacitor includes：
One bearing substrate is placed on a machine table, wherein, the machine table has an at least machining area, described to add
Include at least one machining area of work board along a metal level processing module of a plane formula production line sequential with
An and insulating barrier processing module；
By the metal level processing module of the machine table at least one machining area, to form multiple gold
Belong to layer, and by the insulating barrier processing module of the machine table at least one machining area, it is more to be formed
Individual insulating barrier, the plurality of metal level and multiple insulating barriers are alternately stacked on the bearing substrate, with complete
Into the making of a multiple field stacked structure；And
Two end-electrode structures are formed, to be respectively coated by two opposite side ends of the multiple field stacked structure.
8. the preparation method of thin film capacitor according to claim 7, it is characterised in that the machine table includes one and used
In point-blank driving the transmission mechanism of the bearing substrate by least one machining area, and at least one machining area
One room temperature environment of interior offer, wherein, the metal level processing module includes a metal level coating for being used to form the metal level
Module and first baking module for toasting the metal level, and the insulating barrier processing module includes one and is used to be formed
The insulating barrier coating module of the insulating barrier and second baking module for toasting the insulating barrier, wherein, each
First clad of the end-electrode structure including a side end for coating the multiple field stacked structure, one are used for
The second clad and the 3rd clad for coating second clad of first clad are coated, wherein,
The plane formula production line is a flat annular line.
9. a kind of thin film capacitor, it is characterised in that described thin film capacitor includes：
Pass through the multiple field stacked structure produced by a machine table；And
Two end-electrode structures, two end-electrode structures are respectively coated by two opposite sides of the multiple field stacked structure
Portion；
Wherein, the multiple field stacked structure includes a bearing substrate, multiple metal levels and multiple insulating barriers, and multiple described
Metal level and multiple insulating barriers are alternately stacked on the bearing substrate；
Wherein, the machine table has multiple machining areas along a plane formula production line sequential, and the processing machine
Include in each of platform machining area a metal level processing module for being used to forming the corresponding metal level and
The one insulating barrier processing module for forming the corresponding insulating barrier.
10. thin film capacitor according to claim 9, it is characterised in that each described end-electrode structure includes one and used
The first clad in the side end for coating the multiple field stacked structure, one are used to coating the of first clad
Two clads and one be used to coat the 3rd clad of second clad, wherein, the multiple field stacked structure and
Two end-electrode structures are all coated by a packing colloid, and two two in electrical contact of conductive pin difference end electricity
Pole structure and exposed from the packing colloid and go out.
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Application publication date: 20180223 |