CN107706086B - Silicon carbide substrate vertical structure film electronic device and manufacturing method thereof - Google Patents
Silicon carbide substrate vertical structure film electronic device and manufacturing method thereof Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 135
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 135
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 28
- 238000005468 ion implantation Methods 0.000 claims abstract description 20
- 238000001020 plasma etching Methods 0.000 claims abstract description 8
- -1 aluminum ions Chemical class 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 238000005520 cutting process Methods 0.000 abstract description 7
- 238000000926 separation method Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 176
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention relates to a method for manufacturing a vertical-structure thin-film electronic device with a silicon carbide substrate, which comprises the following steps: s1, performing ion implantation on a silicon carbide substrate, and dividing the silicon carbide substrate into a substrate main body layer, an ion damage layer and a silicon carbide thin film layer positioned on the upper surface of the ion damage layer from bottom to top; s2, manufacturing an electronic device layer on the silicon carbide film layer; s3, removing the residual ion damage layer on the surface of the separated silicon carbide film layer by using an ion reduction method or a plasma etching method; and S4, manufacturing an electrode on the surface of the separated device. The invention relates to a method for manufacturing a vertical-structure thin-film electronic device with a silicon carbide substrate, which mainly solves the problem of resistivity increase caused by an ion damage layer remained on the surface of the silicon carbide substrate after ion cutting and separation, and avoids the defects that thin-film machining is difficult and the atom mobility of some semiconductor materials is not strong at high temperature.
Description
Technical Field
The invention relates to the field of electronic devices, in particular to a thin film electronic device with a vertical structure of a silicon carbide substrate and a manufacturing method thereof.
Background
Silicon carbide is a wide bandgap semiconductor material, and compared with the semiconductor material silicon with the widest application range, the silicon carbide has the advantages of good heat conduction, high working temperature, high current density, high breakdown electric field strength, high working frequency, low power consumption under large current and the like. However, the high price of silicon carbide substrates over other semiconductor materials limits the widespread use of silicon carbide materials. At present, electronic devices made of silicon carbide materials are mainly based on silicon carbide substrates with a thickness of 0.43mm, and the price of the substrates can be as high as 1/3 of device manufacturing cost. If the thickness of the silicon carbide substrate can be reduced, the cost of the device can be reduced.
One of the methods for reducing the cost of silicon carbide substrates in device fabrication is to reduce the amount of silicon carbide used, and ion-cut thin film transfer technology is used for fabricating silicon carbide transfer films, which has been developed in the last 90 th century for fabricating thin film substrates, and the most successful application of the ion-cut thin film transfer technology is to fabricate soi (silicon on insulator) substrates. The main steps of manufacturing the SOI substrate are 1, manufacturing a silicon dioxide layer with the thickness of a micron on a donor silicon carbide substrate, and 2, implanting hydrogen ions from the surface of the donor substrate on which the silicon dioxide layer is manufactured, wherein according to the energy of ion implantation, the hydrogen ions generate an ion damage layer in the silicon substrate with a certain depth below the surface of the silicon dioxide. 3. Bonding the donor substrate and the receiver substrate on the surface of the silicon dioxide, 4, annealing the bonded substrate at a certain temperature, and 5, separating the donor substrate at the ion damage layer. The separated acceptor substrate has a silicon film of the donor substrate on the upper surface, and a silicon dioxide insulating layer and an acceptor substrate are arranged below the film, namely the SOI substrate. There remain lattice damage caused by ion implantation on the surface of the just separated silicon thin film, and two methods are generally used to remove the ion damage, one is to polish the thin film on the separated SOI substrate, and the other is to remove the ion damage by heating the SOI substrate to a temperature of 1000 ℃ or higher to redistribute the atoms by utilizing the high mobility of silicon atoms at high temperature. In the ion cutting thin film transfer technology, the bonding quality of a donor substrate and a receiver substrate is the key of success of the ion cutting thin film transfer.
Because the hardness of the silicon carbide material is high, the flatness of the surface of the substrate is extremely difficult to meet the requirement of bonding the donor substrate and the acceptor substrate. Therefore, the ion cutting film transfer technology cannot be widely applied to the manufacturing of the silicon carbide substrate, and a part of ion damage layer is still left on the surface of the silicon carbide film with the device after separation. The lattice distortion in the ion damage layer has great influence on the resistivity of the silicon carbide, and the silicon carbide must be removed in a vertical structure device, a commonly used mechanical polishing method is not easy to operate on a thin film material, and a method for moving atoms by adding high temperature is not suitable for a silicon carbide material.
Disclosure of Invention
The invention aims to solve the technical problem that in the prior art, an ion damage layer remained on a silicon carbide film after a stress layer is separated by ion cutting cannot be mechanically polished or is difficult to remove by high-temperature annealing. It is a practical method for the fabrication of vertical structure thin film devices using silicon carbide substrates.
The technical scheme for solving the technical problems is as follows:
the invention provides a method for manufacturing a vertical-structure thin-film electronic device with a silicon carbide substrate, which comprises the following steps:
s1, performing ion implantation on a silicon carbide substrate, and dividing the silicon carbide substrate into a substrate main body layer, an ion damage layer and a silicon carbide thin film layer positioned on the upper surface of the ion damage layer from bottom to top;
s2, manufacturing an electronic device layer on the silicon carbide film layer;
s3, removing an ion damage layer remained on the surface of the separated silicon carbide film by using an ion thinning or plasma etching method;
and S4, manufacturing an electrode on the surface of the device with the ion damage layer removed.
The invention has the beneficial effects that: the method mainly solves the problem of resistivity increase caused by a stress damage layer remained on the surface of the silicon carbide substrate after ion cutting and separation. The method is used for manufacturing the vertical-structure thin-film electronic device. The defects that the thin film is difficult to machine and the atoms of some semiconductor materials are not strong in mobility at high temperature are avoided. The invention adopts the ion reduction or plasma etching method to remove the ion damage layer remained on the silicon carbide film after separation, and the film substrate after removing the ion damage layer can be used for manufacturing the electrode material on the surface. The invention is also applicable to electronic devices, such as LEDs, with vertical, or non-vertical structures but with the need to lift off the silicon carbide substrate.
Preferably, the ion implantation energy in step S1 is 10KeV to 10 MeV; the ion implantation dose is 1E14-1E22Ion/cm2(ii) a The ions are elements H, He, Ne, Ar, or gas ions composed thereof.
Preferably, the step S2 includes the following steps:
epitaxially growing an n-type silicon carbide epitaxial layer with lower conductivity than the substrate on the silicon carbide film layer,
injecting aluminum ions or boron ions on the surface of the n-type silicon carbide epitaxial layer to form p-type conductive points,
heating the silicon carbide substrate to over 1200 ℃ to activate aluminum ions or boron ions,
and manufacturing a stress leading-in layer on the n-type silicon carbide epitaxial layer, and separating the film from the epitaxial layer.
Preferably, the step S2 includes:
epitaxially growing an n-type silicon carbide epitaxial layer with lower conductivity than the substrate on the silicon carbide film layer,
epitaxially growing a p-type silicon carbide epitaxial layer on the n-type silicon carbide epitaxial layer,
and manufacturing a stress leading-in layer on the p-type silicon carbide epitaxial layer, and separating the film from the epitaxial layer.
Preferably, in step S2, the method for forming the stress introducing layer includes: the metal required for making the stress-inducing layer by sputtering, electroplating, evaporation or combination of at least two of the above is at least one of Ni, Ti, Pd, Zn, Al, Au, Cu, Fe, Sn, Pt, Ir, Mn, Mg, Co, W, Mo and Zr
Preferably, the step 2 further comprises preparing a semiconductor electronic device on the semiconductor epitaxial layer.
Preferably, the epitaxial method of the n-type silicon carbide epitaxial layer is chemical vapor deposition.
Preferably, the epitaxial methods of the n-type silicon carbide epitaxial layer and the p-type silicon carbide epitaxial layer are chemical vapor deposition.
A vertical-structure thin-film electronic device of a silicon carbide substrate, made by the method of any one of claims 1-7, comprising the following structure in order from bottom to top: an electrode layer, a thin film layer of silicon carbide on the electrode layer, and an electronic device layer on the thin film layer of silicon carbide.
Preferably, the electronic device layer sequentially includes, from bottom to top: the n-type silicon carbide epitaxial layer extending on the silicon carbide thin film layer is formed into a p-type conductive point on the surface of the n-type silicon carbide epitaxial layer by injecting aluminum ions or boron ions, a Schottky barrier layer is formed on the n-type silicon carbide epitaxial layer by sputtering, electroplating, evaporation or a combination of the sputtering, the electroplating and the evaporation, and the stress introduction layer can be used as the Schottky barrier layer.
Preferably, the device further comprises an n-type silicon carbide epitaxial layer which is epitaxially grown on the silicon carbide thin film layer and has lower conductivity than the substrate, a p-type silicon carbide epitaxial layer is further epitaxially grown on the n-type silicon carbide epitaxial layer, and an electrode is manufactured on the p-type silicon carbide epitaxial layer through sputtering, electroplating, evaporation or a combination of the sputtering, the electroplating and the evaporation for manufacturing the Pin type diode, wherein the stress introduction layer can be used as the electrode.
The invention has the beneficial effects that: after ion cutting, the ion damage layer remained on the silicon carbide film after the stress layer separation can not be removed by mechanical polishing or high-temperature annealing. It is a practical method for the fabrication of vertical structure thin film devices using silicon carbide substrates.
Drawings
FIG. 1 is a schematic view of the structure of a silicon carbide substrate of the present invention;
FIG. 2 is a schematic structural view of an ion implanted silicon carbide substrate of the present invention;
FIG. 3 is a schematic structural view of an ion implanted silicon carbide substrate of the present invention;
FIG. 4 is a schematic diagram of an intermediate structure of the electronic device after step S2-1;
FIG. 5 is a schematic diagram of an intermediate structure of the electronic device after step S2-2 of the present invention;
FIG. 6 is a schematic diagram of an intermediate structure of the electronic device after step S5 according to the present invention;
fig. 7 is a schematic structural diagram of an epitaxial layer according to the present invention.
Description of the reference numerals
1. The silicon carbide substrate comprises a silicon carbide substrate, 2, a substrate main body layer, 3, an ion damage layer, 4, a silicon carbide thin film layer, 5, an epitaxial layer, 6, a stress introduction layer and 7, electrodes.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
The technical scheme for solving the technical problems is as follows:
the invention provides a method for manufacturing a vertical-structure thin-film electronic device with a silicon carbide substrate, which comprises the following steps:
s1, performing ion implantation on a silicon carbide substrate, and dividing the silicon carbide substrate into a substrate main body layer, an ion damage layer and a silicon carbide thin film layer positioned on the upper surface of the ion damage layer from bottom to top;
s2, manufacturing an electronic device layer on the silicon carbide film layer;
s3, removing an ion damage layer remained on the surface of the separated silicon carbide film by using an ion thinning or plasma etching method;
and S4, manufacturing an electrode on the surface of the device with the ion damage layer removed.
Preferably, the ion implantation energy in step S1 is 10KeV to 10 MeV; the ion implantation dose is 1E14-1E22Ion/cm2(ii) a The ions are elements H, He, Ne, Ar, or gas ions composed thereof.
Preferably, the step S2 includes the following steps:
epitaxially growing an n-type silicon carbide epitaxial layer with lower conductivity than the substrate on the silicon carbide film layer,
injecting aluminum ions or boron ions on the surface of the n-type silicon carbide epitaxial layer to form p-type conductive points,
heating the silicon carbide substrate to over 1200 ℃ to activate aluminum ions or boron ions,
the upper electrode of the epitaxial layer is plated with nickel to be used as a Schottky barrier layer and a stress leading-in layer.
Preferably, the step S2 includes the following steps: the epitaxial growth method comprises the steps that a semiconductor epitaxial layer is epitaxially grown on the upper surface of a silicon carbide substrate and comprises a first epitaxial layer 51, a second epitaxial layer 52, a third epitaxial layer 53 and a fourth epitaxial layer 54 from bottom to top, wherein the first epitaxial layer is AlN, the second epitaxial layer is N-type GaN, the third epitaxial layer is a multilayer quantum well InxGa (1-x) N and barrier GaN, the fourth epitaxial layer is p-type GaN, and x is larger than or equal to 0 and smaller than or equal to 1.
Preferably, the step 2 further comprises preparing a semiconductor electronic device on the semiconductor epitaxial layer.
Preferably, the method of epitaxy of the semiconductor epitaxial layer 5 is Metal Organic Chemical Vapor Deposition (MOCVD).
A vertical structure thin-film electronic device of a silicon carbide substrate is manufactured by the method and comprises the following structures from bottom to top in sequence: an electrode layer, a silicon carbide film layer on the electrode layer, and an electronic device layer on the silicon carbide film layer.
Preferably, the electronic device layer sequentially includes, from bottom to top: the Schottky barrier layer comprises an n-type silicon carbide epitaxial layer extending on the silicon carbide thin film layer, p-type conductive points formed on the surface of the n-type silicon carbide epitaxial layer by injecting aluminum ions, and a Schottky barrier layer electroplated on the n-type silicon carbide epitaxial layer.
Preferably, the silicon carbide thin film layer is provided with a semiconductor epitaxial layer, the semiconductor epitaxial layer comprises a first epitaxial layer 51, a second epitaxial layer 52, a third epitaxial layer 53 and a fourth epitaxial layer 54 from bottom to top, the first epitaxial layer is AlN, the second epitaxial layer is N-type GaN, the third epitaxial layer is a multilayer quantum well InxGa (1-x) N and barrier GaN, the fourth epitaxial layer is p-type GaN, and x is greater than or equal to 0 and less than or equal to 1.
Example 1
As shown in fig. 1 to 5, ion implantation is performed on the upper surface of the n-type conductive silicon carbide semiconductor substrate layer 1, preferably 5 μm, 10 μm; after ion implantation, generating an ion damage layer 3 below the surface of the semiconductor substrate layer 1, so that the n-type conductive silicon carbide semiconductor substrate layer 1 is divided into a substrate main body layer 2, the ion damage layer 3 and a silicon carbide thin film layer 4 positioned on the upper surface of the ion damage layer 3 from bottom to top; then, an n-type silicon carbide epitaxial layer 5 with lower conductivity than the substrate can be epitaxially grown on the silicon carbide thin film layer 4, aluminum ions are implanted into the surface of the epitaxial layer to form p-type conductive points, and nickel is plated on the epitaxial layer to serve as a Schottky barrier layer 6 (stress leading-in layer). The epitaxial layer and the silicon carbide thin film layer under the epitaxial layer are separated from the silicon carbide substrate, and plasma etching is used to remove the surface of the thin film by about 1 μm so as to ensure the removal of the ion damage layer. An electrode 7 is deposited on the surface of the silicon carbide thin film from which the ion damage layer is removed, as shown in fig. 6.
The application can be used for manufacturing the silicon carbide-based Schottky diode.
Example 2
Performing ion implantation on the upper surface of the silicon carbide substrate layer 1, wherein the ion implantation depth is 0.5-20 μm, preferably 5 μm, 10 μm and 15 μm; after ion implantation, an ion damage layer 3 is generated below the surface of the silicon carbide substrate layer 1, so that the n-type conductive silicon carbide semiconductor substrate layer 1 is divided into a substrate main body layer 2, the ion damage layer 3 and a silicon carbide thin film layer 4 positioned on the upper surface of the ion damage layer 3 from bottom to top; a functional layer (electronic device layer) is prepared on the ion implantation surface of the silicon carbide thin film layer 4, and the electronic device of the present embodiment is a semiconductor epitaxial layer 5 epitaxially grown on the upper surface of the silicon carbide substrate 1, and may also be a semiconductor epitaxial layer 5 epitaxially grown on the upper surface of the semiconductor substrate layer 1 and a semiconductor electronic device prepared on the semiconductor epitaxial layer 5. The epitaxial method of the semiconductor epitaxial layer 5 is Metal Organic Chemical Vapor Deposition (MOCVD).
The semiconductor epitaxial layer 5 in this embodiment is an epitaxial structure with more than one layer, and the epitaxial layer can change conductivity and conductivity type, such as p-type and n-type, through doping. As shown in fig. 7, the semiconductor epitaxial layer 5 may include a first epitaxial layer 51, a second epitaxial layer 52, a third epitaxial layer 53, and a fourth epitaxial layer 54. The first epitaxial layer is AlN, the second epitaxial layer is n-type GaN, and the third epitaxial layer is a multilayer quantum well InxGa(1-x) N and a barrier GaN, the fourth epitaxial layer being p-type GaN, where 0. ltoreq. x.ltoreq.1, this example only given one application of electronic devices, but not limited thereto.
For example, the semiconductor epitaxial layer 5 may further include a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a fourth epitaxial layer and a fifth epitaxial layer from bottom to top. The first epitaxial layer is AlN, the second epitaxial layer comprises non-doped u-GaN, the third epitaxial layer is N-GaN, the fourth layer is a multilayer quantum well InxGa (1-x) N and barrier GaN, the fifth epitaxial layer is p-type GaN, and x is larger than or equal to 0 and smaller than or equal to 1.
As shown in fig. 6, a stress introducing layer 6 is formed on the semiconductor epitaxial layer 5, and Ni is used as the metal material for the stress introducing layer 6, and the stress introducing layer also serves as an ohmic electrode. And (3) removing the silicon carbide substrate by using selective plasma etching on the separated epitaxial layer and the silicon carbide film, removing AlN by using plasma etching or ion thinning, and manufacturing an electrode on the n-type GaN to form the LED with the vertical structure.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A method for manufacturing a vertical structure thin film electronic device of a silicon carbide substrate is characterized by comprising the following steps: s1, carrying out ion implantation on a silicon carbide substrate or providing the silicon carbide substrate with the ion implantation, wherein the silicon carbide substrate is divided into a substrate main body layer, an ion damage layer and a silicon carbide thin film layer positioned on the upper surface of the ion damage layer from bottom to top through the ion implantation; s2, manufacturing an electronic device layer on the silicon carbide film layer; s3, removing an ion damage layer remained on the surface of the separated silicon carbide film by using an ion thinning or plasma etching method; s4, manufacturing an electrode on the surface of the device with the ion damage layer removed; the step S2 includes the following steps: epitaxially growing an n-type silicon carbide epitaxial layer with lower conductivity than the substrate on the silicon carbide thin film layer, injecting aluminum ions or boron ions on the surface of the n-type silicon carbide epitaxial layer to form p-type conductive points, heating the silicon carbide substrate to more than 1200 ℃ to activate the aluminum ions or the boron ions, manufacturing a stress introduction layer on the n-type silicon carbide epitaxial layer, and separating the thin film from the epitaxial layer.
2. The method for manufacturing a vertical structure thin film electronic device on a silicon carbide substrate as claimed in claim 1, wherein the ion implantation energy in step S1 is 10KeV to 10 MeV; the ion implantation dosage is 1E14-1E22 ions/cm 2; the ions are elements H, He, Ne, Ar, or gas ions composed thereof.
3. The method of fabricating a vertical structure thin film electronic device on a silicon carbide substrate as claimed in claim 1, wherein the method of fabricating the stress inducing layer in step S2 comprises: one or the combination of at least two of sputtering, electroplating and evaporation plating; the metal required for forming the stress-inducing layer is at least one of Ni, Ti, Pd, Zn, Al, Au, Cu, Fe, Sn, Pt, Ir, Mn, Mg, Co, W, Mo and Zr.
4. A method for fabricating vertical structure thin film electronic devices on silicon carbide substrates according to any of claims 1-3, wherein said step 2 further comprises fabricating semiconductor electronic devices on the semiconductor epitaxial layers.
5. The method as claimed in claim 3, wherein the epitaxial process of the n-type silicon carbide epitaxial layer is chemical vapor deposition.
6. A vertical-structure thin-film electronic device of a silicon carbide substrate, which is manufactured by the method of any one of claims 1 to 5 and comprises the following structures in sequence from bottom to top: an electrode layer, a silicon carbide film layer on the electrode layer, an electronic device layer on the silicon carbide film layer, and a stress-inducing layer as or not as a Schottky barrier layer; or the stress-inducing layer may or may not be used as an electrode.
7. The silicon carbide substrate vertical structure thin film electronic device according to claim 6, wherein the electronic device layer comprises, from bottom to top: the Schottky barrier layer is formed on the n-type silicon carbide epitaxial layer through sputtering, electroplating, evaporation or a combination of the sputtering, the electroplating, the evaporation and the evaporation.
8. The silicon carbide substrate vertical structure thin film electronic device according to claim 6, further comprising an n-type silicon carbide epitaxial layer with lower conductivity than the substrate epitaxially grown on the silicon carbide thin film layer, a p-type silicon carbide epitaxial layer further epitaxially grown on the n-type silicon carbide epitaxial layer, and electrodes fabricated on the p-type silicon carbide epitaxial layer by sputtering, electroplating, evaporation or a combination thereof for fabricating a PiN-type diode.
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