CN107689262A - A kind of crystal silicon solar battery back field aluminium paste - Google Patents
A kind of crystal silicon solar battery back field aluminium paste Download PDFInfo
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- CN107689262A CN107689262A CN201610645652.XA CN201610645652A CN107689262A CN 107689262 A CN107689262 A CN 107689262A CN 201610645652 A CN201610645652 A CN 201610645652A CN 107689262 A CN107689262 A CN 107689262A
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 51
- 239000004411 aluminium Substances 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 239000013078 crystal Substances 0.000 title claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 42
- 239000011521 glass Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 20
- 239000000654 additive Substances 0.000 claims abstract description 14
- 230000000996 additive effect Effects 0.000 claims abstract description 14
- 239000001856 Ethyl cellulose Substances 0.000 claims abstract description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims abstract description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims abstract description 7
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 6
- IJCWFDPJFXGQBN-RYNSOKOISA-N [(2R)-2-[(2R,3R,4S)-4-hydroxy-3-octadecanoyloxyoxolan-2-yl]-2-octadecanoyloxyethyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCCCCCCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCCCCCCCCCCCC IJCWFDPJFXGQBN-RYNSOKOISA-N 0.000 claims abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical group O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 6
- 239000001589 sorbitan tristearate Substances 0.000 claims abstract description 6
- 235000011078 sorbitan tristearate Nutrition 0.000 claims abstract description 6
- 229960004129 sorbitan tristearate Drugs 0.000 claims abstract description 6
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 6
- -1 BiF3:3 parts Chemical group 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- 150000002148 esters Chemical class 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000009835 boiling Methods 0.000 abstract description 7
- 230000032683 aging Effects 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 abstract description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 description 10
- 239000002002 slurry Substances 0.000 description 10
- 238000007654 immersion Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 239000006187 pill Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000011297 pine tar Substances 0.000 description 1
- 229940068124 pine tar Drugs 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The present invention relates to a kind of crystal silicon solar battery back field aluminium paste, raw material weight group component is 0.1~2 part of 74 parts of aluminium powder, 20~25 parts of organic bond, 1~4 part of lead-free glass powder and additive；The raw material weight component of organic bond is 40~70 parts of terpinol, 1 part of 5~10 parts of butyl carbitol, 5~10 parts of butyl carbitol acetate, 3~10 parts of ethyl cellulose, 5~15 parts of dibatyl phithalate of neck and sorbitan tristearate；The raw material weight component of lead-free glass powder is Bi2O3：30~60 parts, B2O3：5~15 parts, BiF3：3 parts, SiO2：10~20 parts, ZnO：5~10 parts, TiO2：1~5 part, Al2O3：10~20 parts, P2O5：1~3 part；Additive is purity ＞ 99% and fineness is the spherical copper powder of 20000 mesh；Fineness≤10 μm are rolled to three-roll grinder after aluminium powder, organic bond, lead-free glass powder and additive are well mixed, viscosity is 30~60Pa.s.The crystal silicon solar battery back field aluminium paste, electricity conversion is high, and adhesive force is high, and the decay of adhesive force transformation efficiency is small after high temperature ageing, and water boiling resistance performance is good.
Description
Technical field
The present invention relates to a kind of crystal silicon solar energy battery electric slurry, and in particular to a kind of crystalline silicon sun
Energy cell back surface field aluminium paste, further relates to a kind of preparation method of crystal silicon solar battery back field aluminium paste, belongs to too
Positive energy cell art.
Background technology
With the development of photovoltaic technology, the thickness of solar battery sheet raw material crystal silicon chip starts gradually to reduce,
And the transformation efficiency more and more higher of photovoltaic.To meet the technology needs of cell piece, to the back surface field of one of raw material
Aluminium paste proposes higher requirement.Existing market existing product upgrades to unleaded production by the products containing lead of early stage
Product, the caused influence on human body and environment is small, but with the development of technology, these lead-free aluminum slurries are thinner
Silicon chip on can not meet the adhesive force requirement small greatly with angularity simultaneously, while can not also provide higher turn
Change efficiency, in addition the requirement of the performance such as the aging reliability to slurry and water boiling resistance also more and more higher.
Publication No. CN101345263A Chinese invention patent, it relate to a kind of solar silicon photovoltaic cell nothing
Lead electric slurry forms and preparation method, slurry by mass percent 70~75% aluminium powder, 20~25% organic
Adhesive, 1~5% unorganic glass powder, 1~5% additive obtain after preparation；The aluminium powder be purity >=
99.9%th, average grain diameter is the ball aluminum powder of 2~6MM and surface covered with aluminium nitride protective layer；Add simultaneously
Organic bond：Ethyl cellulose, resin, hexadecanol, diethylene glycol dimethyl ether, butyl, pine tar
Alcohol, n-butanol composition；Unorganic glass powder is silica, boric acid, aluminum oxide, antimony oxide, zirconium oxide composition.
Publication No. CN101582462A Chinese invention patent, it, which is invented, is related to a kind of crystal silicon solar electricity
Pond lead-free Al-back-surface-field (BSF) paste and preparation method thereof, slurry is by the aluminium powder of 72-82 parts, 0.1-2 part zirconium oxides
Powder, the inorganic binder of 0.1-5 parts, the organic bond of 15-25 parts and the auxiliary agent of 1-3 parts are made.
Crystal silicon solar energy battery in currently available technology is primarily present following shortcoming with back field aluminum paste：
1. the aluminium powder in slurry is easily oxidised in high temperature sintering, it is not easy to form conductive layer, causes crystalline silicon too
Positive energy cell piece series electrical resistive is big, makes its cell conversion efficiency low.
2. glass dust network structure used is unstable in slurry, adhesive force reduces after slurry high temperature ageing, causes electricity
Pond piece service life is reduced.
3. the requirement of water boiling resistance performance can not be met.
The content of the invention
The primary and foremost purpose of the present invention is, overcomes problems of the prior art, there is provided a kind of superior performance
Crystal silicon solar battery back field aluminium paste.
To solve above technical problem, a kind of crystal silicon solar battery back field aluminium provided by the present invention
Slurry, the raw material components and weight content of the aluminium paste are as follows：74 parts of aluminium powder, organic bond 20~25
0.1~2 part of part, 1~4 part of lead-free glass powder and additive；Raw material components of the organic bond and again
It is as follows to measure content：40~70 parts of terpinol, 5~10 parts of butyl carbitol, butyl carbitol acetate 5~10
Part, 3~10 parts of ethyl cellulose, 5~15 parts of dibatyl phithalate of neck and sorbitan tristearate 1
Part；The raw material components and weight content of the lead-free glass powder are as follows, Bi2O3：30~60 parts, B2O3：
5~15 parts, BiF3：3 parts, SiO2：10~20 parts, ZnO：5~10 parts, TiO2：1~5 part,
Al2O3：10~20 parts, P2O5：1~3 part；The additive is purity ＞ 99% and fineness is 20000
Purpose spherical copper powder.
It is an advantage of the current invention that overcome problems of the prior art, there is provided a kind of crystal silicon solar
The preparation method of cell back surface field aluminium paste, manufactured aluminium paste electricity conversion is high, and adhesive force is high, and high temperature is old
The decay of adhesive force transformation efficiency is small after change, and water boiling resistance performance is good.
Embodiment
Embodiment one
The preparation method of crystal silicon solar battery back field aluminium paste, in turn includes the following steps：(1) by following
Component and weight content prepare raw material, 74 parts of aluminium powder, 20 parts of organic bond, 1 part of lead-free glass powder and
0.1 part of additive；The aluminium powder is purity ＞ 99%, and average grain diameter is 2 μm, tap density 1g/cm3,
Pattern is spherical；The raw material components and weight content of the organic bond are as follows：40 parts of terpinol, butyl
5 parts of carbitol, 5 parts of butyl carbitol acetate, 3 parts of ethyl cellulose, neck dibatyl phithalate 5
1 part of part and sorbitan tristearate；The raw material components and weight content of the lead-free glass powder are as follows,
Bi2O3：30 parts, B2O3：5 parts, BiF3：3 parts, SiO2：10 parts, ZnO：5 parts, TiO2：1
Part, Al2O3：10 parts, P2O5：1 part；
(2) organic bond is produced：After said components are weighed in proportion, it is placed in reactor and heats
To 80 DEG C, heat while stirring, until obtaining the organic bond of homogeneous transparent；Produce lead-free glass powder：
Said components are weighed in proportion, after being well mixed with batch mixer, are fitted into silica crucible, in 150 DEG C of baking ovens
Middle drying 1h, then silica crucible is taken out and is placed in Muffle furnace the melting 0.5h at a temperature of 1000 DEG C, so
Afterwards using ball milling 12h after deionized water quenching, then dry to obtain the lead-free glass powder below 10 μm of particle diameter；
(3) ground after being well mixed the aluminium powder, organic bond, lead-free glass powder and additive with three rollers
Grinding machine is rolled to fineness≤10 μm, viscosity 30Pa.s.
By above-mentioned aluminium paste with 280 mesh silk-screen printings on 156m*156m monocrystalline silicon pieces, after drying sintering,
Sintered membrane surfacing is fine and close, non-microcracked, no aluminium pill aluminium bag, the following form of other performances：
| Transformation efficiency | Fill factor, curve factor | Open-circuit voltage | Short circuit current | Angularity | Peel strength |
| 18.55% | 78.94 | 0.637V | 5.75A | 1.3mm | 23N |
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out boiling examination by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 70 DEG C of water and soaks 30min, observes the situation of underwater bubble, electricity is carried out after immersion
Performance test.After tested, bubble-free produces in cell piece immersion process, and cell piece photoelectric conversion after immersion
Efficiency is 18.52%.
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out aging intensity by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 85 DEG C of baking ovens, taken out after placing 48h, peel strength is tested, is as a result 22N,
Electricity conversion is 18.55%.
Embodiment two
The preparation method of crystal silicon solar battery back field aluminium paste, in turn includes the following steps：(1) by following
Component and weight content prepare raw material, 74 parts of aluminium powder, 22 parts of organic bond, 2 parts of lead-free glass powder and
1 part of additive；The aluminium powder is purity ＞ 99%, and average grain diameter is 4 μm, tap density 1.5g/cm3,
Pattern is spherical；The raw material components and weight content of the organic bond are as follows：55 parts of terpinol, butyl
8 parts of carbitol, 7 parts of butyl carbitol acetate, 6 parts of ethyl cellulose, neck dibatyl phithalate 10
1 part of part and sorbitan tristearate；The raw material components and weight content of the lead-free glass powder are as follows,
Bi2O3：45 parts, B2O3：10 parts, BiF3：3 parts, SiO2：15 parts, ZnO：8 parts, TiO2：3
Part, Al2O3：15 parts, P2O5：2 parts；
(2) organic bond is produced：After said components are weighed in proportion, it is placed in reactor and heats
To 90 DEG C, heat while stirring, until obtaining the organic bond of homogeneous transparent；Produce lead-free glass powder：
Said components are weighed in proportion, after being well mixed with batch mixer, are fitted into silica crucible, in 150 DEG C of baking ovens
Middle drying 1.5h, then silica crucible is taken out and is placed in Muffle furnace the melting 0.8h at a temperature of 1200 DEG C, so
Afterwards using ball milling 18h after deionized water quenching, then dry to obtain the lead-free glass powder below 10 μm of particle diameter；
(3) ground after being well mixed the aluminium powder, organic bond, lead-free glass powder and additive with three rollers
Grinding machine is rolled to fineness≤10 μm, viscosity 45Pa.s.
By above-mentioned aluminium paste with 280 mesh silk-screen printings on 156m*156m monocrystalline silicon pieces, after drying sintering,
Sintered membrane surfacing is fine and close, non-microcracked, no aluminium pill aluminium bag, the following form of other performances：
| Transformation efficiency | Fill factor, curve factor | Open-circuit voltage | Short circuit current | Angularity | Peel strength |
| 18.52% | 78.89 | 0.638V | 5.77A | 1.4mm | 35N |
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out boiling examination by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 70 DEG C of water and soaks 30min, observes the situation of underwater bubble, electricity is carried out after immersion
Performance test.After tested, bubble-free produces in cell piece immersion process, and cell piece photoelectric conversion after immersion
Efficiency is 18.50%.
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out aging intensity by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 85 DEG C of baking ovens, taken out after placing 48h, peel strength is tested, is as a result 33N,
Electricity conversion is 18.50%.
Embodiment three
The preparation method of crystal silicon solar battery back field aluminium paste, in turn includes the following steps：(1) by following
Component and weight content prepare raw material, 74 parts of aluminium powder, 25 parts of organic bond, 4 parts of lead-free glass powder and
2 parts of additive；The aluminium powder is purity ＞ 99%, and average grain diameter is 6 μm, tap density 2g/cm3,
Pattern is spherical；The raw material components and weight content of the organic bond are as follows：70 parts of terpinol, butyl
10 parts of carbitol, 10 parts of butyl carbitol acetate, 10 parts of ethyl cellulose, neck dibatyl phithalate
15 parts and 1 part of sorbitan tristearate；The raw material components and weight content of the lead-free glass powder are as follows,
Bi2O3：60 parts, B2O3：15 parts, BiF3：3 parts, SiO2：20 parts, ZnO：10 parts, TiO2：
5 parts, Al2O3：20 parts, P2O5：3 parts；
(2) organic bond is produced：After said components are weighed in proportion, it is placed in reactor and heats
To 100 DEG C, heat while stirring, until obtaining the organic bond of homogeneous transparent；Produce lead-free glass powder：
Said components are weighed in proportion, after being well mixed with batch mixer, are fitted into silica crucible, in 150 DEG C of baking ovens
Middle drying 2h, then silica crucible is taken out and is placed in Muffle furnace the melting 1h at a temperature of 1300 DEG C, then
Ball milling 24h after being quenched using deionized water, then dry to obtain the lead-free glass powder below 10 μm of particle diameter；
(3) ground after being well mixed the aluminium powder, organic bond, lead-free glass powder and additive with three rollers
Grinding machine is rolled to fineness≤10 μm, viscosity 60Pa.s.
By above-mentioned aluminium paste with 280 mesh silk-screen printings on 156m*156m monocrystalline silicon pieces, after drying sintering,
Sintered membrane surfacing is fine and close, non-microcracked, no aluminium pill aluminium bag, the following form of other performances：
| Transformation efficiency | Fill factor, curve factor | Open-circuit voltage | Short circuit current | Angularity | Peel strength |
| 18.60% | 78.96 | 0.642V | 5.73A | 1.3mm | 20N |
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out boiling examination by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 70 DEG C of water and soaks 30min, observes the situation of underwater bubble, electricity is carried out after immersion
Performance test.After tested, bubble-free produces in cell piece immersion process, and cell piece photoelectric conversion after immersion
Efficiency is 18.50%.
The Monocrystalline silicon cell piece of unleaded back field aluminum paste carries out aging intensity by the following method by above-mentioned printing-sintering
Test：Cell piece is put into 85 DEG C of baking ovens, taken out after placing 48h, peel strength is tested, is as a result 33N,
Electricity conversion is 18.50%.
Outside above-described embodiment, the present invention can also have other embodiment, all to use equivalent substitution or equivalent change
The technical scheme to be formed is changed, is all fallen within the protection domain of application claims.
Claims (1)
- A kind of 1. crystal silicon solar battery back field aluminium paste, it is characterised in that：The raw material components of the aluminium paste and Weight content is as follows：74 parts of aluminium powder, 20~25 parts of organic bond, 1~4 part of lead-free glass powder and additive 0.1~2 part；The raw material components and weight content of the organic bond are as follows：40~70 parts of terpinol, butyl 5~10 parts of carbitol, 5~10 parts of butyl carbitol acetate, 3~10 parts of ethyl cellulose, neck phthalic acid 1 part of 5~15 parts of dibutyl ester and sorbitan tristearate；The raw material components and weight of the lead-free glass powder contain Measure as follows, Bi2O3：30~60 parts, B2O3：5~15 parts, BiF3：3 parts, SiO2：10~20 parts, ZnO：5~10 parts, TiO2：1~5 part, Al2O3：10~20 parts, P2O5：1~3 part；The additive For the spherical copper powder that purity ＞ 99% and fineness are 20000 mesh.
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| CN201610645652.XA CN107689262A (en) | 2016-08-04 | 2016-08-04 | A kind of crystal silicon solar battery back field aluminium paste |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610645652.XA CN107689262A (en) | 2016-08-04 | 2016-08-04 | A kind of crystal silicon solar battery back field aluminium paste |
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| CN107689262A true CN107689262A (en) | 2018-02-13 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012044142A (en) * | 2010-08-12 | 2012-03-01 | Cheil Industries Inc | Aluminum paste and solar cell using the same |
| CN103208321A (en) * | 2013-04-16 | 2013-07-17 | 江苏太阳新材料科技有限公司 | Crystalline silicon solar cell back surface field aluminum paste and preparation method thereof |
| CN106158066A (en) * | 2015-04-22 | 2016-11-23 | 江苏正能电子科技有限公司 | A kind of crystal silicon solar battery back field aluminium paste |
-
2016
- 2016-08-04 CN CN201610645652.XA patent/CN107689262A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012044142A (en) * | 2010-08-12 | 2012-03-01 | Cheil Industries Inc | Aluminum paste and solar cell using the same |
| CN103208321A (en) * | 2013-04-16 | 2013-07-17 | 江苏太阳新材料科技有限公司 | Crystalline silicon solar cell back surface field aluminum paste and preparation method thereof |
| CN106158066A (en) * | 2015-04-22 | 2016-11-23 | 江苏正能电子科技有限公司 | A kind of crystal silicon solar battery back field aluminium paste |
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