CN107688250B - 一种基于液晶电光波导的光学交叉互连器件 - Google Patents

一种基于液晶电光波导的光学交叉互连器件 Download PDF

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CN107688250B
CN107688250B CN201710855251.1A CN201710855251A CN107688250B CN 107688250 B CN107688250 B CN 107688250B CN 201710855251 A CN201710855251 A CN 201710855251A CN 107688250 B CN107688250 B CN 107688250B
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张需明
李腾浩
陈庆明
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Shenzhen Research Institute HKPU
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Abstract

本发明公开了一种基于液晶电光波导的光学交叉互连器件,包括光学交叉互连器件本体,所述光学交叉互连器件本体由基于液晶电光波导的光开关阵列组成,各个所述光开关通过驱动电压控制液晶电光波导的形成和消失,切换光束传播路径,实现N x N多端口光信号的交换。本发明在保证实现与MEMS器件相当的光学损耗、端口扩展性和切换速度的基础上,具有更小的器件尺寸、低驱动电压和能耗、良好的单片集成,以及更强的鲁棒性等优势,可以实现高性能的多端口光交换,以及良好的单片集成,适用于数据中心的交换应用,从而具有推广应用价值。

Description

一种基于液晶电光波导的光学交叉互连器件
技术领域
本发明涉及光开关技术领域,具体为一种基于液晶电光波导的光学交叉互连器件。
背景技术
近几年,面向移动网络、高清视频、云计算等应用的大数据服务正推动光通讯网络和数据中心的发展。目前,商用的多端口(例如8x 8)光交叉互连器件以MEMS微镜阵列或LCoS为主流。该两种器件皆采用自由空间光传播的方式,对光学对准和环境因素有严苛的要求,且器件体积较大,不适用于单片集成。面向数据中心的交换应用,已有研究提出和验证采用MEMS器件实现光电混合交换的可行性和有效性。
在研究方面,一系列基于平面光波导的光交叉互连器件得到提出,例如基于马赫-陈德尔干涉术(MZI)的光开关,基于热光效应的硅基光开关阵列,基于半导体光放大的光开关阵列,基于MEMS可控光波导的光交换器件等等。但是,现有的这些光交叉互连器件仍未能完整地实现光学损耗、端口扩展性、切换速度、尺寸、能耗、单片集成,以及鲁棒性等综合性能的平衡,尚未能在数据中心中得到应用。
发明内容
本发明要解决的技术问题是克服现有技术的缺陷,提供一种基于液晶电光波导的光学交叉互连器件。
为了解决上述技术问题,本发明提供了如下的技术方案:
本发明一种基于液晶电光波导的光学交叉互连器件,包括光学交叉互连器件本体,所述光学交叉互连器件本体由基于液晶电光波导的光开关阵列组成,每个所述光开关可配置连接一个输入端口和一个输出端口,所述光学交叉互连器件本体的表层设为上层SiO2层,所述上层SiO2层的下方设有共地层,所述共地层的下方设有上层取向膜层,所述上层取向膜层的下方设有液晶层,所述液晶层的下方设有下层取向膜层,所述下层取向膜层的下方设有绝缘层,所述绝缘层的内部设有驱动电极层、金属防护层和CMOS电开关阵列层,所述驱动电极层与CMOS电开关阵列层平行间隔设置,所述驱动电极层与CMOS电开关阵列层之间设有金属防护层,所述CMOS电开关阵列层设置在硅基底的上表面上。
优选的,所述光开关阵列集成于同一具有CMOS电路的硅基底。
优选的,每个所述光开关均由液晶电光波导和液晶芯波导两部分级联构成,所述液晶电光波导和液晶芯波导平行间隔设置在多聚物包层的内部。
优选的,所述液晶电光波导部分设为一层连续的液晶层,且液晶电光波导的结构和路径由驱动电极的形状和路径进行定义。
优选的,所述液晶芯波导的结构为在低折射率多聚物包层中填充液晶,所述多聚物包层包括多聚物包层本体,所述多聚物包层本体的内部设有与液晶芯波导相对应的液晶流道、与液晶电光波导相对应的液晶空腔,以及上一级电开关的液晶芯波导。
优选的,所述驱动电极层的绝缘部分内设有直波导驱动电极,相邻两个所述直波导驱动电极之间两个分支波导驱动电极连接。
本发明所达到的有益效果是:本发明在保证实现与MEMS器件相当的光学损耗、端口扩展性和切换速度的基础上,具有更小的器件尺寸、低驱动电压和能耗、良好的单片集成,以及更强的鲁棒性等优势,可以实现高性能的多端口光交换,以及良好的单片集成,适用于数据中心的交换应用,从而具有推广应用价值。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。在附图中:
图1是本发明的光开关阵列排布图;
图2是本发明的横截面示意图;
图3是本发明的光开关组成示意图;
图4是本发明的驱动电极层的结构示意图;
图5是本发明的多聚物包层的结构示意图。
图中:1-光开关,101-多聚物包层,1011-多聚物包层本体,1012-液晶流道,1013-液晶空腔,1014-上一级电开关的液晶芯波导,102-液晶芯波导,103-液晶电光波导,2-输入端口,3-输出端口,4-上层SiO2层,5-共地层,6-上层取向膜层,7-液晶层,8-下层取向膜层,9-驱动电极层,901-绝缘部分,902-直波导驱动电极,903-分支波导驱动电极,10-金属防护层,11-绝缘层,12-CMOS电开关阵列层,13-硅基底。
具体实施方式
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。
实施例
如图1至图5所示,本发明提供一种基于液晶电光波导的光学交叉互连器件技术方案:一种基于液晶电光波导的光学交叉互连器件,包括光学交叉互连器件本体,所述光学交叉互连器件本体由基于液晶电光波导103的光开关1阵列组成,每个所述光开关1可配置连接一个输入端口2和一个输出端口3,各个光开关1通过驱动电压控制液晶电光波导103的形成和消失,切换光束传播路径,从而实现N x N多端口光信号的交换,所述光学交叉互连器件本体的表层设为上层SiO2层4,所述上层SiO2层4的下方设有共地层5,所述共地层5的下方设有上层取向膜层6,所述上层取向膜层6的下方设有液晶层7,所述液晶层7的下方设有下层取向膜层8,所述下层取向膜层8的下方设有绝缘层11,所述绝缘层11的内部设有驱动电极层9、金属防护层10和CMOS电开关阵列层12,所述驱动电极层9与CMOS电开关阵列层12平行间隔设置,所述驱动电极层9与CMOS电开关阵列层12之间设有金属防护层10,所述CMOS电开关阵列层12设置在硅基底13的上表面上。
进一步,所述光开关1阵列集成于同一具有CMOS电路的硅基底13。
进一步,每个所述光开关1均由液晶电光波导103和液晶芯波导102两部分级联构成,所述液晶电光波导103和液晶芯波导102平行间隔设置在多聚物包层101的内部。
进一步,所述液晶电光波导103部分设为一层连续的液晶层7,且液晶电光波导103的结构和路径由驱动电极的形状和路径进行定义。
进一步,所述液晶芯波导102的结构为在低折射率多聚物包层101中填充液晶,该液晶芯波导102通过取向层预先控制液晶分子取向,并和驱动电压共同作用形成液晶电光波导103,所述多聚物包层101包括多聚物包层101本体1011,所述多聚物包层101本体1011的内部设有与液晶芯波导102相对应的液晶流道1012、与液晶电光波导103相对应的液晶空腔1013,以及上一级电开关的液晶芯波导1014。
进一步,所述驱动电极层9的绝缘部分901内设有直波导驱动电极902,相邻两个所述直波导驱动电极902之间两个分支波导驱动电极903连接。
该驱动电极的特殊形状以及施加相应的中间驱动信号可以提高光开关1切换速度。
工作原理:本发明中每个光开关1具有两种工作状态:在工作状态1中,光开关1引导输入光束向横向传输;在工作状态2中,光开关1引导输入光束转弯进入纵向传输;在使用时,以从输入端口n到输出端口m的光传输为例,输入光束由输入端口n进入该器件后,首先沿着横向历经m-1个光开关1(处于工作状态1),然后在第m个光开关1(处于工作状态2)发生转向进入纵向,再历经n-1个光开关1(处于工作状态1或2),最终到达输出端口m进行输出,实现了多端口的交叉互连,具有更小的器件尺寸、低驱动电压和能耗、良好的单片集成,以及更强的鲁棒性等优势,可以实现高性能的多端口光交换,以及良好的单片集成,适用于数据中心的交换应用,从而具有推广应用价值。
最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (6)

1.一种基于液晶电光波导的光学交叉互连器件,包括光学交叉互连器件本体,其特征在于:所述光学交叉互连器件本体由基于液晶电光波导(103)的光开关(1)阵列组成,每个所述光开关(1)配置连接一个输入端口(2)和一个输出端口(3),所述光学交叉互连器件本体的表层设为上层SiO2层(4),所述上层SiO2层(4)的下方设有共地层(5),所述共地层(5)的下方设有上层取向膜层(6),所述上层取向膜层(6)的下方设有液晶层(7),所述液晶层(7)的下方设有下层取向膜层(8),所述下层取向膜层(8)的下方设有绝缘层(11),所述绝缘层(11)的内部设有驱动电极层(9)、金属防护层(10)和CMOS电开关阵列层(12),所述驱动电极层(9)与CMOS电开关阵列层(12)平行间隔设置,所述驱动电极层(9)与CMOS电开关阵列层(12)之间设有金属防护层(10),所述CMOS电开关阵列层(12)设置在硅基底(13)的上表面上。
2.根据权利要求1所述的一种基于液晶电光波导的光学交叉互连器件,其特征在于:所述光开关(1)阵列集成于同一具有CMOS电路的硅基底(13)。
3.根据权利要求1所述的一种基于液晶电光波导的光学交叉互连器件,其特征在于:每个所述光开关(1)均由液晶电光波导(103)和液晶芯波导(102)两部分级联构成,所述液晶电光波导(103)和液晶芯波导(102)平行间隔设置在多聚物包层(101)的内部。
4.根据权利要求3所述的一种基于液晶电光波导的光学交叉互连器件,其特征在于:所述液晶电光波导(103)部分设为一层连续的液晶层(7),且液晶电光波导(103)的结构和路径由驱动电极的形状和路径进行定义。
5.根据权利要求3所述的一种基于液晶电光波导的光学交叉互连器件,其特征在于:所述液晶芯波导(102)的结构为在低折射率多聚物包层(101)中填充液晶,所述多聚物包层(101)包括多聚物包层本体(1011),所述多聚物包层(101)本体的内部设有与液晶芯波导(102)相对应的液晶流道(1012)、与液晶电光波导(103)相对应的液晶空腔(1013),以及上一级电开关的液晶芯波导(1014)。
6.根据权利要求1所述的一种基于液晶电光波导的光学交叉互连器件,其特征在于:所述驱动电极层(9)的绝缘部分(901)内设有直波导驱动电极(902),相邻两个所述直波导驱动电极(902)之间两个分支波导驱动电极(903)连接。
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