CN107665813B - Processing method of lithium tantalate crystal substrate - Google Patents
Processing method of lithium tantalate crystal substrate Download PDFInfo
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- CN107665813B CN107665813B CN201710880538.XA CN201710880538A CN107665813B CN 107665813 B CN107665813 B CN 107665813B CN 201710880538 A CN201710880538 A CN 201710880538A CN 107665813 B CN107665813 B CN 107665813B
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 title claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 76
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 38
- 239000010432 diamond Substances 0.000 claims abstract description 38
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 28
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 14
- ZXVOCOLRQJZVBW-UHFFFAOYSA-N azane;ethanol Chemical compound N.CCO ZXVOCOLRQJZVBW-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012797 qualification Methods 0.000 abstract description 2
- 235000011187 glycerol Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a processing method of a lithium tantalate crystal substrate, which comprises the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, wherein diamond polishing liquid is adopted in the rough polishing step and the fine polishing step, the diamond polishing liquid is composed of diamond micro powder, glycol, glycerol, ethanol ammonia and deionized water, the pH value of the diamond polishing liquid is 9-11, the content of the diamond micro powder is 20-25%, the content of the glycol is 8-15%, the content of the glycerol is 3-5%, the content of the ethanol ammonia is 0.1-0.3%, and the content of the deionized water is 60-65%. The invention can greatly improve the surface smoothness of the lithium tantalate wafer, reduce the surface roughness of the lithium tantalate wafer, eliminate stress and achieve the mirror polishing effect, thereby reducing the production cost and improving the qualification rate of products.
Description
Technical Field
The invention relates to the field of processing methods of semiconductor devices, in particular to a processing method of a lithium tantalate crystal substrate.
Background
Lithium tantalate is a typical multifunctional single crystal material with a melting point of 1670 deg.C, a hardness of 5.5 Mohs, and a density of 7.459 g/cm3. Its dielectric constant ε11/ε0Is 51.7,. epsilon33/ε044.5, piezoelectric strain constant d22Is 2.4X 10-11C／N、d33Is 0.8X 10-11C/N, coefficient of thermal expansion (a) 16.1X 10-5／℃、(c)4．1×10-8Typical directions are X, Z, Y36, Y42. It has excellent piezoelectric, electrooptical and thermoelectric performances, such as large electromechanical coupling coefficient, low loss, high-temperature stability, good high-frequency performance and the like. With the rapid development of mobile communication and information industries, lithium tantalate wafers are increasingly widely used to manufacture surface acoustic wave and bulk wave devices such as surface acoustic wave filters, resonators, etc., which have high frequency, medium frequency bandwidth, low insertion loss, high frequency stability, and miniaturization.
In order to obtain high-performance electronic components, the lithium tantalate wafer is required to have a complete surface lattice, an extremely high flatness, a damage-free ultra-smooth surface and no crystal orientation deviation. Even if the polished surface has tiny defects, the surface performance of the crystal material is damaged, and even the crystal structure is changed, so that the frequency precision and the frequency stability of the element are influenced. The lithium tantalate single crystal material belongs to a typical hard and brittle material, has mechanical properties such as cleavage property, anisotropy and the like, is difficult to obtain the surface of a wafer with high plane precision and no damage by grinding and polishing, and the polishing solution used in the polishing process is common nano-scale polishing solution, so that the processing time is long, and the obtained lithium tantalate has poor surface flatness (generally more than 50 nanometers) and poor smoothness and cannot achieve the mirror surface effect. The yield of the client is low, and the production cost of the client is increased.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a method for processing a lithium tantalate crystal substrate, which can greatly improve the surface smoothness of a lithium tantalate wafer, reduce the surface roughness of the lithium tantalate wafer, eliminate stress and achieve the mirror polishing effect, thereby reducing the production cost and improving the qualification rate of products.
The technical scheme adopted by the invention for solving the technical problem is as follows: a processing method of a lithium tantalate crystal substrate comprises the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, wherein diamond polishing liquid is adopted in the rough polishing step and the fine polishing step, the diamond polishing liquid is composed of diamond micro powder, glycol, glycerol, ethanol ammonia and deionized water, the pH value of the diamond polishing liquid is 9-11, the content of the diamond micro powder is 10%, the content of the glycol is 13%, the content of the glycerol is 4%, the content of the ethanol ammonia is 0.2%, the content of the deionized water is 72.8% or the content of the diamond micro powder is 13%, the content of the glycol is 10%, the content of the glycerol is 3.5%, the content of the ethanol ammonia is 0.3%, and the content of the deionized water is 73.2%, and the specific steps are as follows:
1) slicing: cutting a lithium tantalite crystal bar into wafers with the thickness of 270-280 microns by a slicing machine under the conditions that the linear speed of a steel wire is 400-1000 m/min and the temperature is 22 +/-2 ℃;
2) chamfering: under the conditions that the rotation speed of a grinding wheel is 600-800 rpm/min and the temperature is 22 +/-2 ℃, chamfering the right angle of the lithium tantalate wafer into a fillet of about R0.1 by using a chamfering machine;
3) blackening: reducing the lithium tantalate wafer by using an annealing furnace under the conditions that the nitrogen flow is 6-10L/min and the temperature is 450 +/-2 ℃;
4) grinding: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, the thickness of the lithium tantalate wafer is reduced to 220-230 microns from 270-280 microns by a grinder, the roughness is about 0.2 micron, and the thickness uniformity is within 3 microns;
5) rough polishing: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, a rough polisher and diamond polishing liquid are used for polishing the lithium tantalate wafer, the roughness reaches 0.05 micron, and the thickness uniformity is within 1 micron;
6) fine polishing: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, a lithium tantalate wafer is polished by a fine polisher and diamond polishing liquid, the roughness is below 1 nanometer, and the lithium tantalate wafer has a mirror surface effect and is free of stress.
The method has the advantages that when the diamond polishing solution is adopted in the rough polishing step and the fine polishing step for matching use, the surface smoothness of the lithium tantalate wafer can be greatly improved, the surface roughness of the lithium tantalate wafer can be reduced, the stress can be eliminated, and the mirror polishing effect can be achieved, so that the production cost can be reduced, and the product yield can be improved. In addition, compared with the common nano-grade polishing solution, the diamond polishing solution can greatly shorten the polishing period, thereby achieving the purpose of improving the labor productivity.
Drawings
FIG. 1 is a graph showing the relationship between the surface roughness of lithium tantalate and the polishing time in the example of the present invention.
The invention is further described below with reference to the accompanying drawings.
Detailed Description
Example 1: a processing method of a lithium tantalate crystal substrate comprises the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, wherein diamond polishing liquid is adopted in the rough polishing step and the fine polishing step, and diamond micro powder content in the diamond polishing liquid is 10%, ethylene glycol content is 13%, glycerin content is 4%, ethanol ammonia content is 0.2%, and deionized water content is 72.8%; the method comprises the following specific steps:
1) slicing: cutting a lithium tantalite crystal bar into wafers with the thickness of 270-280 microns by a slicer under the conditions that the linear speed of a steel wire is 600m/min and the temperature is 22 +/-2 ℃;
2) chamfering: under the conditions that the rotation speed of a grinding wheel is 600rpm/min and the temperature is 22 +/-2 ℃, chamfering the right angle of the lithium tantalate wafer into a fillet of about R0.1 by using a chamfering machine;
3) blackening: under the conditions that the nitrogen flow is 6L/min and the temperature is 450 +/-2 ℃, reducing the lithium tantalate wafer by using an annealing furnace;
4) grinding: under the conditions that the pressure is 40KG and the temperature is 22 +/-2 ℃, the thickness of the lithium tantalate wafer is reduced to 220-230 microns from 270-280 microns by a grinder, the roughness is about 0.2 micron, and the thickness uniformity is within 3 microns;
5) rough polishing: under the conditions that the pressure is 40KG and the temperature is 22 +/-2 ℃, a rough polisher and diamond polishing liquid are used for polishing the lithium tantalate wafer, the roughness reaches 0.05 micron, and the thickness uniformity is within 1 micron;
6) fine polishing: under the conditions of 40KG pressure and 22 +/-2 ℃ temperature, the lithium tantalate wafer is polished by a fine polisher and diamond polishing liquid, so that the roughness is below 1 nanometer, and the lithium tantalate wafer has a mirror surface effect and is free of stress.
It should be noted that the diamond slurry must be subjected to a rigorous filtration process after it is prepared.
Example 2: a processing method of a lithium tantalate crystal substrate comprises the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, wherein diamond polishing liquid is adopted in the rough polishing step and the fine polishing step, and diamond micro powder content in the diamond polishing liquid is 13%, ethylene glycol content is 10%, glycerin content is 3.5%, ethanol ammonia content is 0.3%, and deionized water content is 73.2%; the method comprises the following specific steps:
1) slicing: cutting a lithium tantalite crystal bar into wafers with the thickness of 270-280 microns by a slicer under the conditions that the linear speed of a steel wire is 1000m/min and the temperature is 22 +/-2 ℃;
2) chamfering: under the conditions that the rotation speed of a grinding wheel is 800rpm/min and the temperature is 22 +/-2 ℃, chamfering the right angle of the lithium tantalate wafer into a fillet of about R0.1 by using a chamfering machine;
3) blackening: reducing the lithium tantalate wafer by using an annealing furnace under the conditions that the nitrogen flow is 10L/min and the temperature is 450 +/-2 ℃;
4) grinding: under the conditions that the pressure is 60KG and the temperature is 22 +/-2 ℃, the thickness of the lithium tantalate wafer is reduced to 220-230 microns from 270-280 microns by a grinder, the roughness is about 0.2 micron, and the thickness uniformity is within 3 microns;
5) rough polishing: under the conditions that the pressure is 60KG and the temperature is 22 +/-2 ℃, a rough polisher and diamond polishing liquid are used for polishing the lithium tantalate wafer, the roughness reaches 0.05 micron, and the thickness uniformity is within 1 micron;
6) fine polishing: under the conditions of pressure of 60KG and temperature of 22 +/-2 ℃, a fine polisher and diamond polishing liquid are used for polishing the lithium tantalate wafer, the roughness is enabled to be below 1 nanometer, and the lithium tantalate wafer is mirror-finished and stress-free.
When the diamond polishing solution with the two formulas is matched with the processing steps under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, the roughness of the lithium tantalate wafer obtained when the diamond polishing solution is matched with the common nano-grade polishing solution and the conventional polishing technology is shown in the following table:
unit: nano meter
| Sample numbering | 1 | 2 | 3 | 4 | 5 |
| General of | 0.67 | 0.70 | 0.68 | 0.75 | 0.73 |
| Formulation 1 | 0.32 | 0.30 | 0.28 | 0.30 | 0.26 |
| Formulation 2 | 0.29 | 0.25 | 0.30 | 0.31 | 0.28 |
It can be seen from the above table that, when the processing method of the lithium tantalate crystal substrate of the present invention is used in combination with the diamond polishing solution, the surface roughness of the lithium tantalate wafer can be significantly reduced, so as to achieve the technical effects of mirror surface effect and no stress.
The present invention is not limited to the above embodiments. The above-described embodiments are illustrative examples, and any embodiments having the technical means recited in the claims of the present invention and substantially the same effects are included in the technical scope of the present invention.
FIG. 1 shows the relationship between the surface roughness of lithium tantalate and the polishing time under different polishing conditions, and it can be seen from the relationship that the time required for using diamond polishing solution is significantly shorter than that of the conventional nano-scale polishing solution to achieve the same surface roughness, thereby greatly improving the labor productivity.
Claims (1)
1. A processing method of a lithium tantalate crystal substrate comprises the steps of slicing, chamfering, blackening, grinding, rough polishing and fine polishing, and is characterized in that diamond polishing liquid is adopted in the rough polishing step and the fine polishing step, the diamond polishing liquid is composed of diamond micro powder, glycol, glycerol, ethanol ammonia and deionized water, the pH value of the diamond polishing liquid is 9-11, the content of the diamond micro powder is 10%, the content of the glycol is 13%, the content of the glycerol is 4%, the content of the ethanol ammonia is 0.2%, the content of the deionized water is 72.8% or the content of the diamond micro powder is 13%, the content of the glycol is 10%, the content of the glycerol is 3.5%, the content of the ethanol ammonia is 0.3%, and the content of the deionized water is 73.2%, and the specific steps are as follows:
1) slicing: cutting a lithium tantalite crystal bar into wafers with the thickness of 270-280 microns by a slicing machine under the conditions that the linear speed of a steel wire is 400-1000 m/min and the temperature is 22 +/-2 ℃;
2) chamfering: under the conditions that the rotation speed of a grinding wheel is 600-800 rpm/min and the temperature is 22 +/-2 ℃, chamfering the right angle of the lithium tantalate wafer into a rounded corner of R0.1 by using a chamfering machine;
3) blackening: reducing the lithium tantalate wafer by using an annealing furnace under the conditions that the nitrogen flow is 6-10L/min and the temperature is 450 +/-2 ℃;
4) grinding: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, the thickness of the lithium tantalate wafer is reduced to 220-230 microns from 270-280 microns by a grinder, the roughness is 0.2 micron, and the thickness uniformity is within 3 microns;
5) rough polishing: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, a rough polisher and diamond polishing liquid are used for polishing the lithium tantalate wafer, the roughness reaches 0.05 micron, and the thickness uniformity is within 1 micron;
6) fine polishing: under the conditions that the pressure is 20-60 KG and the temperature is 22 +/-2 ℃, a lithium tantalate wafer is polished by a fine polisher and diamond polishing liquid, the roughness is below 1 nanometer, and the lithium tantalate wafer has a mirror surface effect and is free of stress.
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| CN112152588B (en) * | 2020-09-25 | 2024-01-30 | 福建晶安光电有限公司 | Surface acoustic wave filter and method for processing wafer for surface acoustic wave filter |
| CN112621392B (en) * | 2020-12-08 | 2021-10-29 | 天通控股股份有限公司 | Processing method of large-size ultrathin high-precision lithium niobate wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469459A (en) * | 2003-04-30 | 2004-01-21 | 东莞市福地电子材料有限公司 | Processing method of nano level saphire substrate and its special polishing liquid |
| CN1569396A (en) * | 2003-07-16 | 2005-01-26 | 上海新华霞实业有限公司 | Grind process for optical sapphire crystal substrate |
| CN103921205A (en) * | 2014-04-04 | 2014-07-16 | 德清晶辉光电科技有限公司 | Production process of 6-inch lithium niobate or lithium tantalite chips |
| JP2014241530A (en) * | 2013-06-12 | 2014-12-25 | 信越化学工業株式会社 | Method for lithium tantalate crystalline wafer recovery, and recovered wafer thereby |
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- 2017-09-26 CN CN201710880538.XA patent/CN107665813B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469459A (en) * | 2003-04-30 | 2004-01-21 | 东莞市福地电子材料有限公司 | Processing method of nano level saphire substrate and its special polishing liquid |
| CN1569396A (en) * | 2003-07-16 | 2005-01-26 | 上海新华霞实业有限公司 | Grind process for optical sapphire crystal substrate |
| JP2014241530A (en) * | 2013-06-12 | 2014-12-25 | 信越化学工業株式会社 | Method for lithium tantalate crystalline wafer recovery, and recovered wafer thereby |
| CN103921205A (en) * | 2014-04-04 | 2014-07-16 | 德清晶辉光电科技有限公司 | Production process of 6-inch lithium niobate or lithium tantalite chips |
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Inventor after: Shen Hao Inventor after: Gu Xinyi Inventor after: Xu Qiufeng Inventor after: Gui Huanhuan Inventor after: Ding Sunjie Inventor before: Shen Hao Inventor before: Gu Xiaowei Inventor before: Fan Yong |
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