CN107658362B - 基于黑磷的p-n光电检测器 - Google Patents
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Abstract
本发明公开了一种基于黑磷的p‑n光电检测器,包括衬底,位于衬底上的掩埋氧化物层及位于掩埋氧化物层上的有源区结构,有源区结构包括:源极、漏极以及黑磷(BP)和聚二甲基硅氧烷(PDMS)组成的栅极。衬底是P型衬底,掩模氧化物层所用材料是SiO2材料,厚度为50nm。应用拉伸或压缩聚二甲基硅氧烷(PDMS),分别沿着锯齿形和扶手椅方向向黑磷(BP)引入不同的应变,放置在掩模氧化物层的顶部。黑磷(BP)层是五层的。源极和漏极接触,利用聚甲基丙烯酸甲酯(PMMA)来进行电子束光刻定义。电极材料所选为Ti和Au。可给衬底施加电压调节器件。本发明设计并模拟了基于BP的p‑n光电检测器,对不同应变方向的黑磷和能量结构进行分析,考虑了暗电流效应,***的优化了吸收系数和响应度,响应度高达66.29A/W。
Description
技术领域
本发明涉及一种光电子器件技术领域,特别是基于黑磷(BP)所制备的光电探测器器件。
背景技术
这些年来,与光电子技术相关的光电探测器发展很快,越来越多的材料被应用到探测器的研究中。众所周知,近红外光谱中常用的光电探测材料主要是具有较高吸收系数的Ge。然而,Ge不能覆盖整个L波段(1565-1625nm),甚至引入面内拉伸应变。GeSn合金作为另一组替代物,通过调整Sn的含量或引入应变来调节带隙,可以将光通信波段扩展到U波段(1625-1675nm),甚至在2000nm处也有好的响应度。然而,它们只能应用在近红外范围,都不能在整个中红外(MIR)范围内进一步延长截止波长。
近年来,包括石墨烯,过渡金属,二硫化物和黑磷(BP)在内的二维材料已被视为未来新型电子和光电器件的材料。这些材料作为二维材料,可以在中红外波段发挥出作用。对于BP,它拥有直接的带隙,有助于在超宽带频谱上实现光检测。所以在实际的实验过程中,为了进一步将带隙定制到更小的值,就需要应用到应变工程。对于BP而言,由于其超柔软性能使杨氏模量小一个数量级,因此理论上可以承受高达30%的拉伸应变,这比其他二维材料更大。通过应用水平或垂直应变,可以连续调节带隙,这将伴随着半导体-金属转变(SMT)和有效质量的相当大的变化,使得黑磷备受关注。因此,在中红外波段探测器的研究中,二维材料特别是黑磷将是研究的热点。
发明内容
现在的研究还没有给出将光学吸收边缘扩展到MIR范围的专门研究,所以,本发明的目的是提供一种基于黑磷(BP)的p-n光电检测器,通过引入应变,可连续调节带隙,提高了中红外光波段的吸收系数,提高了中红外探测器的检测性能,使得光电检测器的光谱窗可以扩展到MIR范围。
本发明的技术方案是这样实现的:一种基于黑磷(BP)的p-n光电检测器,包括硅衬底(1),位于硅衬底(1)上的掩埋氧化物层(2)及位于掩埋氧化物层(2)上的有源区结构,有源区结构包括:源极(3)、漏极(4)以及黑磷(BP)层和聚二甲基硅氧烷(PDMS)层组成的层叠结构栅极(5),其特征在于,硅衬底(1)是P型掺杂,栅极(5)中黑磷(BP)的层数为五层,分别沿着锯齿形和扶手椅方向放置在掩埋氧化物层(2)的上面,掩模氧化物层所用材料是SiO2材料,源极(3)和漏极(4)接触,利用聚甲基丙烯酸甲酯(PMMA)来进行电子束光刻定义,电极材料所选为Ti和Au,给衬底施加电压,可以控制检测器内部电流,红外光的吸收可显著提高10%,响应度高达66.29A/W。
根据结构的特性表明,黑磷是二维材料,且本发明中所用到黑磷的层数为五层,其柔软性特别良好,可以承受30%的拉伸应变,可以对其进行不同方向的应变的引入,来观察带隙调节的效果。与单层BP层相比,五层黑磷光电探测器红外光的吸收可显着提高10%。同时,可以有效调制通道电导,实现低关断状态的可行性。所以,五层是相对合适的厚度,极大地提高了光学吸收。
制作上述本发明器件的方法,包括如下步骤:
1、利用离子注入工艺,对衬底进行P型重掺杂,然后利用热氧化工艺,在P型衬底上氧化生长一层SiO2氧化物层,作为氧化物层。
2、采用物理气相淀积的方法淀积黑磷,黑磷(BP)是五层结构,分别沿着锯齿形和扶手椅方向淀积在掩埋氧化物层的上面。聚二甲基硅氧烷(PDMS)做在黑磷的上面。
3、使用聚甲基丙烯酸甲酯(PMMA)用电子束光刻定义源极和漏极接触,并且在100℃下使用电子束蒸发沉积5nm Ti/50nm Au。
4、将电压(Vg)施加到p+掺杂的硅作为背栅,其可以通过控制电压调制器件。
本发明具有如下优点:
本发明中基于黑磷(BP)的光电探测器中的黑磷是五层结构,这种结构被验证为可通过应用水平或垂直应变,可以连续调节带隙。与单层BP层相比,五层红外光的吸收可显着提高10%。同时,可以有效调制通道电导,实现低关断状态的可行性。因此,在这种设计中,五层是相对合适的厚度,极大地提高了光学吸收。并且分别验证了从扶手椅和锯齿形方向引入应变最后的光吸收。
附图说明
图1是本发明基于黑磷(BP)光电检测器的结构示意图。
图2是本发明基于黑磷(BP)光电检测器中黑磷(BP)的五层晶体结构。
具体实施方式
为了使本发明的目的及优点更加清楚明白,以下结合附图和实施例对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本发明,并不用于限定本发明。
参照图1,本发明中基于黑磷(BP)光电检测器包括:硅衬底1,氧化物掩膜层2,源极3,漏极4以及黑磷(BP)和聚二甲基硅氧烷(PDMS)组成的栅极5。其中,硅衬底1是P型掺杂,氧化物掩膜层是SiO2,厚度为50nm。源极3和漏极4使用聚甲基丙烯酸甲酯(PMMA)用电子束光刻定义。并且将电压(Vg)施加到p+掺杂的硅作为背栅,可以通过控制电压调制器件。
参照图2,本发明中基于黑磷(BP)光电检测器中的黑磷(BP)的五层结构,以及将黑磷淀积在氧化物掩膜层上的两种不同方向,分别为扶手椅方向和锯齿形方向。两种方向分别验证器件的性能。
参照图1和图2,本发明制作基于黑磷(BP)光电检测器的方法,给出如下实施例。
实施例:制作基于黑磷(BP)光电检测器以及分析。
参照图1,本实例的实现步骤如下:
步骤1:衬底掺杂,做掩埋层。
首先利用离子注入工艺对衬底进行掺杂。硅衬底1温度控制在室温,避免高温扩散引起的热缺陷,进行硼掺杂,得到P型硅衬底1。然后利用热氧化工艺,干湿氧结合的方法,在温度为900度的条件下生长SiO2氧化物掩膜层2,厚度控制在50nm。
步骤2:淀积黑磷
利用物理气相淀积中的磁控溅射的方法在氧化物掩膜层上淀积一层黑磷,气压为两个毫托,淀积温度为110度,时长80分钟。值得注意的是黑磷的结构是五层的。聚二甲基硅氧烷(PDMS)做在黑磷的上面。
步骤3:光刻源漏,做电极
使用聚甲基丙烯酸甲酯(PMMA)用电子束光刻定义源极3和漏极4接触,并且在100℃下使用电子束蒸发沉积5nm Ti和50nm Au。
参照图2,本实例的分析步骤如下:
本发明中基于黑磷(BP)光电检测器中的黑磷(BP)的五层结构,以及将黑磷淀积在氧化物掩膜层上的两种不同方向,分别是扶手椅方向和锯齿形方向。为方便起见,我们将扶手椅方向定义为x方向,将锯齿形方向定义为y方向。在x或y方向施加高达20%的拉伸或压缩应变,以探索整个结构中的变形过程。对于扶手椅方向,原子距离和磷原子之间的带角缩短为εx=-20%,反之亦然。对于锯齿形方向,磷原子之间的距离是具有相同不变的定律的。
本发明研究了五层黑磷光电探测器的应变效应,模拟了不同应变下五层BP沿不同方向的带结构。基于黑磷晶体管的高灵敏度MIR光电探测器已经证明了此光电探测器结构在中红外波段具有良好的响应。
以上所述仅是本发明的几个优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (5)
1.基于黑磷的p-n光电检测器,包括硅衬底(1),位于硅衬底(1)上的掩埋氧化物层(2)及位于掩埋氧化物层(2)上的有源区结构,有源区结构包括:源极(3)、漏极(4)以及黑磷(BP)层和聚二甲基硅氧烷(PDMS)层组成的层叠结构栅极(5),其特征在于,硅衬底(1)是P型掺杂,栅极(5)中黑磷(BP)的层数为五层,分别沿着锯齿形和扶手椅方向放置在掩埋氧化物层(2)的上面,掩模氧化物层所用材料是SiO2材料,源极(3)和漏极(4)接触,利用聚甲基丙烯酸甲酯(PMMA)来进行电子束光刻定义,电极材料所选为Ti和Au,给衬底施加电压,可以控制检测器内部电流,红外光的吸收可显著提高10%,响应度高达66.29A/W。
2.根据权利要求1所述的基于黑磷的p-n光电检测器,其特征在于,所述光电检测器的制造方法,包括以下步骤:
第一步,在硅衬底(1)上热氧化生长一层SiO2掩模氧化物层(2);
第二步,应用拉伸或压缩聚二甲基硅氧烷(PDMS),向黑磷(BP)引入不同的应变,将其放置在SiO2掩模氧化物层的顶部;
第三步,使用聚甲基丙烯酸甲酯(PMMA)用电子束光刻定义源极和漏极接触,并且使用物理气相淀积法来沉积Ti和Au;
第四步,将电压施加到p+掺杂的硅作为背栅,其可以电调制器件。
3.根据权利要求2所述的基于黑磷的p-n光电检测器,其特征在于,所述第一步中的SiO2掩模氧化物层(2)的厚度是50nm。
4.根据权利要求2所述的基于黑磷的p-n光电检测器,其特征在于,所述第二步中的向黑磷引入不同的应变是有两个方向的,分别为锯齿形方向和扶手椅方向。
5.根据权利要求2所述的基于黑磷的p-n光电检测器,其特征在于,所述第三步中的使用物理气相淀积法来沉积Ti和Au,是在100℃条件下使用电子束蒸发沉积5nm Ti和50nmAu。
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