CN107644924B - A kind of silicon thin film single side minimizing technology - Google Patents
A kind of silicon thin film single side minimizing technology Download PDFInfo
- Publication number
- CN107644924B CN107644924B CN201710841474.2A CN201710841474A CN107644924B CN 107644924 B CN107644924 B CN 107644924B CN 201710841474 A CN201710841474 A CN 201710841474A CN 107644924 B CN107644924 B CN 107644924B
- Authority
- CN
- China
- Prior art keywords
- thin film
- silicon
- single side
- silicon wafer
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemically Coating (AREA)
- Formation Of Insulating Films (AREA)
Abstract
This application discloses a kind of silicon thin film single side minimizing technologies, comprising: carries out cleaning and surface wool manufacturing to silicon wafer；In the backside deposition film of the silicon wafer in a manner of face-to-face；In the backside deposition protective layer of the silicon wafer；By the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；It is etched using acid corrosion liquid, removes the oxide layer and the protective layer.Above-mentioned silicon thin film single side minimizing technology, being capable of not damaged and no pollution single side removal silicon thin film.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of silicon thin film single side minimizing technology.
Background technique
The single crystal silicon solar cell that first piece of transfer efficiency is 6% in the world is prepared from AT&T Labs, the U.S. in 1954
Since, the development of solar battery is to advance by leaps and bounds, and the production of crystal silicon solar batteries uses throughout world various regions.
Scientific research personnel be continually striving to exploration under, the efficiency of crystal silicon battery is also constantly making a breakthrough, and highest transfer efficiency has reached
To 26.33%, very close theoretical boundary 29%, the cost that battery efficiency is promoted constantly increases, and develops new silicon thin film
Technology battery is imperative, such as amorphous silicon and polysilicon membrane technology.
Silicon thin film generallys use the preparation of CVD (chemical vapor deposition) method, but when due to CVD method deposition film often
Single sided deposition can be cannot achieve around another side is plated to.Existing two methods are capable of forming single side silicon thin film, including exposure mask protection list
Face etching method and laser etching method, wherein exposure mask guard method, which refers to, plates one layer in silicon film surface after silicon deposited film
The protective layer of alkali resistant corrosion, the silicon thin film of another side is then got rid of with aqueous slkali, finally gets rid of surface with etchant solution
Protective layer, this method are very high to the consistency requirements of protective layer, and otherwise aqueous slkali can penetrate into front silicon from protective film layer
Film surface causes etching injury to silicon thin film, and the basic ion on the other hand infiltrated into protective film layer is difficult to be cleaned,
Battery can be polluted in post-order process process, and laser etching method refers to the silicon of the energy removal another side using laser
Film, but silicon chip back side can be damaged after removing, surface recombination is very high, need it is additional go damage technique, go to damage
Cheng Keneng also can cause to damage to positive silicon thin film.
Summary of the invention
To solve the above problems, the present invention provides a kind of silicon thin film single side minimizing technology, it being capable of not damaged and no pollution
Single side remove silicon thin film.
A kind of silicon thin film single side minimizing technology provided by the invention, comprising:
Cleaning and surface wool manufacturing are carried out to silicon wafer；
In the backside deposition film of the silicon wafer in a manner of face-to-face；
In the backside deposition protective layer of the silicon wafer；
By the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；
It is etched using acid corrosion liquid, removes the oxide layer and the protective layer.
Preferably, in above-mentioned silicon thin film single side minimizing technology, the backside deposition protective layer in the silicon wafer be
The backside deposition silicon oxide protective layer or silicon nitride protective layer of the silicon wafer.
Preferably, described to be etched using acid corrosion liquid in above-mentioned silicon thin film single side minimizing technology, remove the oxide layer
With the protective layer are as follows:
Using hf etching, the oxide layer and the protective layer are removed.
Preferably, in above-mentioned silicon thin film single side minimizing technology, the thickness range of the protective layer is 80nm to 120nm.
Preferably, described by the front of the silicon wafer and around the thin-films Oxygen of plating in above-mentioned silicon thin film single side minimizing technology
Change, form oxide layer are as follows:
850 DEG C to 900 DEG C at a temperature of, in the way of wet-oxygen oxidation, by the front of the silicon wafer and around the thin of plating
Film oxidation, forms oxide layer.
Preferably, in above-mentioned silicon thin film single side minimizing technology, the thickness range of the film is 100nm to 150nm.
As can be seen from the above description, above-mentioned silicon thin film single side minimizing technology provided by the invention, due to include to silicon wafer into
Row cleaning and surface wool manufacturing；In the backside deposition film of the silicon wafer in a manner of face-to-face；In the backside deposition of the silicon wafer
Protective layer；By the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；It is etched using acid corrosion liquid, described in removal
Oxide layer and the protective layer, therefore being capable of not damaged and no pollution single side removal silicon thin film.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the first silicon thin film single side minimizing technology provided by the embodiments of the present application.
Specific embodiment
Core of the invention thought is to provide a kind of silicon thin film single side minimizing technology, being capable of not damaged and no pollution list
Face removes silicon thin film.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in FIG. 1, FIG. 1 is the embodiment of the present application for the first silicon thin film single side minimizing technology provided by the embodiments of the present application
The schematic diagram of the first the silicon thin film single side minimizing technology provided, this method comprises the following steps:
S1: cleaning and surface wool manufacturing are carried out to silicon wafer；
Specifically, can first clean to silicon wafer, the golden word on surface is then prepared by the way of wet chemical etching technique
Tower flannelette can be 45 degree of positive pyramid flannelette.
S2: in the backside deposition film of the silicon wafer in a manner of face-to-face；
Specifically, CVD method deposition film can be used, silicon wafer modes of emplacement is face-to-face, the complete silicon of backside deposition
Film, a front surface and a side surface are all inevitably formed around plating film, this needs removes.
S3: in the backside deposition protective layer of the silicon wafer；
Specifically, this protective layer can be silicon oxide or silicon nitride, both substances can be acidproof, effective protection silicon
The film at the piece back side is not corroded.
S4: by the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；
Specifically, front and back is formed oxide layer around the film oxidation of plating using the method for wet oxygen thermal oxide.
S5: it is etched using acid corrosion liquid, removes the oxide layer and the protective layer.
It should be noted that this acid corrosion liquid will not both bring metallic pollution as aqueous slkali, it will not be as laser
Mode brings damage to film like that.
As can be seen from the above description, the first silicon thin film single side minimizing technology provided by the embodiments of the present application, due to including
Cleaning and surface wool manufacturing are carried out to silicon wafer；In the backside deposition film of the silicon wafer in a manner of face-to-face；In the silicon wafer
Backside deposition protective layer；By the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；It is etched using acid corrosion liquid,
The oxide layer and the protective layer are removed, therefore being capable of not damaged and no pollution single side removal silicon thin film.
Second of silicon thin film single side minimizing technology provided by the embodiments of the present application is gone in the first above-mentioned silicon thin film single side
Further include following technical characteristic on the basis of method:
The backside deposition protective layer in the silicon wafer is the backside deposition silicon oxide protective layer or nitrogen in the silicon wafer
SiClx protective layer.
It should be noted that silica and silicon nitride can guarantee that the film of its underpart will not be oxidized, and in subsequent acid
It is easily removed under solution environmental, does not have residual, impurity will not be brought to pollute.
The third silicon thin film single side minimizing technology provided by the embodiments of the present application is gone in the first above-mentioned silicon thin film single side
Further include following technical characteristic on the basis of method:
It is described to be etched using acid corrosion liquid, remove the oxide layer and the protective layer are as follows:
Using hf etching, the oxide layer and the protective layer are removed.
Specifically, the removal ability of this hydrofluoric acid is stronger, and pollution-free, damage not will cause, therefore, be preferably here
Hydrofluoric acid removal.
4th kind of silicon thin film single side minimizing technology provided by the embodiments of the present application is gone in the first above-mentioned silicon thin film single side
Further include following technical characteristic on the basis of method:
The thickness range of the protective layer is 80nm to 120nm.
The protective layer of this thickness is capable of forming the ability of being effectively protected, and low manufacture cost, subsequent also to easily remove.
Certainly this sets as the case may be, can variation according to the actual situation and adjust.
5th kind of silicon thin film single side minimizing technology provided by the embodiments of the present application is gone in the first above-mentioned silicon thin film single side
Further include following technical characteristic on the basis of method:
It is described by the front of the silicon wafer and around the film oxidation of plating, form oxide layer are as follows:
850 DEG C to 900 DEG C at a temperature of, in the way of wet-oxygen oxidation, by the front of the silicon wafer and around the thin of plating
Film oxidation, forms oxide layer.
In addition, it is desirable to explanation, the duration of this wet-oxygen oxidation can be preferably 1 hour to 2 hours, guarantee institute
Some is exposed to external front and is all oxidized around the film of plating, consequently facilitating being thoroughly removed in follow-up process, only stays
The film at the lower back side.
6th kind of silicon thin film single side minimizing technology provided by the embodiments of the present application is that the first is thin to the 5th kind of silicon above-mentioned
In film single side minimizing technology it is any on the basis of, further include following technical characteristic:
The thickness range of the film is 100nm to 150nm.
It should be noted that the thickness of this film can be set according to actual needs, and this film will not be by
Acid solution corrosion, so as to be not removed during acid solution removes protective film.
In conclusion avoiding alkali above example implements not damaged and no pollution removal front and around the film of plating
The generation of carrier surface recombination problem caused by solution or laser ablation, and can directly be set with existing producing line PECVD and hot oxygen
It is standby, it does not need to increase additional increase large scale equipment, it can be compatible with existing producing line.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (6)
1. a kind of silicon thin film single side minimizing technology characterized by comprising
Cleaning and surface wool manufacturing are carried out to silicon wafer；
In the backside deposition film of the silicon wafer in a manner of face-to-face；
In the backside deposition protective layer of the silicon wafer；
By the front of the silicon wafer and around the film oxidation of plating, oxide layer is formed；
It is etched using acid corrosion liquid, removes the oxide layer and the protective layer.
2. silicon thin film single side minimizing technology according to claim 1, which is characterized in that the back side in the silicon wafer is heavy
Product protective layer is the backside deposition silicon oxide protective layer or silicon nitride protective layer in the silicon wafer.
3. silicon thin film single side minimizing technology according to claim 1, which is characterized in that it is described to be etched using acid corrosion liquid,
Remove the oxide layer and the protective layer are as follows:
Using hf etching, the oxide layer and the protective layer are removed.
4. silicon thin film single side minimizing technology according to claim 1, which is characterized in that the thickness range of the protective layer is
80nm to 120nm.
5. silicon thin film single side minimizing technology according to claim 1, which is characterized in that it is described by the silicon wafer front and
Around the film oxidation of plating, oxide layer is formed are as follows:
850 DEG C to 900 DEG C at a temperature of, in the way of wet-oxygen oxidation, by the front of the silicon wafer and around the thin-films Oxygen of plating
Change, forms oxide layer.
6. silicon thin film single side minimizing technology according to claim 1-5, which is characterized in that
The thickness range of the film is 100nm to 150nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710841474.2A CN107644924B (en) | 2017-09-18 | 2017-09-18 | A kind of silicon thin film single side minimizing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710841474.2A CN107644924B (en) | 2017-09-18 | 2017-09-18 | A kind of silicon thin film single side minimizing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107644924A CN107644924A (en) | 2018-01-30 |
| CN107644924B true CN107644924B (en) | 2019-06-11 |
Family
ID=61111905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710841474.2A Active CN107644924B (en) | 2017-09-18 | 2017-09-18 | A kind of silicon thin film single side minimizing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107644924B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599459B (en) * | 2018-11-14 | 2020-10-16 | 晶澳（扬州）太阳能科技有限公司 | Processing method of solar cell |
| CN110828619B (en) * | 2020-01-09 | 2020-04-10 | 浙江爱旭太阳能科技有限公司 | Manufacturing method of P-type solar cell with laser optimized winding plating |
| CN115274936A (en) * | 2022-08-29 | 2022-11-01 | 通威太阳能(金堂)有限公司 | Solar cell and method for manufacturing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037720A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JP2004253473A (en) * | 2003-02-18 | 2004-09-09 | Sharp Corp | Process for fabricating thin film solar cell, thin film solar cell, and thin film solar cell module |
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3326343B2 (en) * | 1996-12-10 | 2002-09-24 | シャープ株式会社 | Method and jig for manufacturing solar cell |
| CN101930912B (en) * | 2010-07-20 | 2012-03-14 | 晶澳太阳能有限公司 | Process of realizing p plus and n plus diffusion on both sides of silicon chip by utilizing mask |
| JP5379767B2 (en) * | 2010-09-02 | 2013-12-25 | ＰＶＧ Ｓｏｌｕｔｉｏｎｓ株式会社 | Solar cell and manufacturing method thereof |
-
2017
- 2017-09-18 CN CN201710841474.2A patent/CN107644924B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037720A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JP2004253473A (en) * | 2003-02-18 | 2004-09-09 | Sharp Corp | Process for fabricating thin film solar cell, thin film solar cell, and thin film solar cell module |
| CN106328769A (en) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | Method for processing mono-crystalline silicon piece surface |
Non-Patent Citations (1)
| Title |
|---|
| Novel selective emitter process using non-acidic etch-back for inline-diffused silicon wafer solar cells;Prabir Kanti Basu等;《Renewable Energy》;20131220;全文 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107644924A (en) | 2018-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101777603B (en) | Method for manufacturing back contact solar energy batteries | |
| CN107644924B (en) | A kind of silicon thin film single side minimizing technology | |
| CN104992990B (en) | A kind of method for reducing surface light reflectivity of silicon chip | |
| CN109962126B (en) | Manufacturing system and method of N-type passivation contact battery | |
| JP6553731B2 (en) | N-type double-sided battery wet etching method | |
| CN102064232A (en) | Process applied to single-surface corroded p-n junction or suede structure of crystalline silicon solar cell | |
| JP6246744B2 (en) | Method for manufacturing solar battery cell | |
| CN201681950U (en) | Back-contact solar cell for high power to-weight ratio application | |
| TW201129680A (en) | Acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates | |
| JP6692797B2 (en) | Solar cell and manufacturing method thereof | |
| CN104051564A (en) | Wet etching process and equipment, and solar cell and manufacturing method thereof | |
| CN109686816A (en) | The preparation method of passivation contact N-type solar cell | |
| CN104934500A (en) | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter | |
| CN107644925B (en) | A kind of preparation method of P-type crystal silicon solar battery | |
| CN107863420A (en) | The preparation technology of solar cell without etching processing | |
| CN104956495A (en) | Solar cell and method for producing same | |
| CN102737981A (en) | Method for realizing silicon wafer singleside polishing | |
| CN104009118B (en) | A kind of preparation method of high-efficiency N-type crystalline silicon grooving and grid burying battery | |
| WO2023213088A1 (en) | Solar cell and preparation method therefor, and photovoltaic system | |
| CN103361738A (en) | Polycrystalline silicon solar battery and solar battery polycrystalline silicon slice flocking method | |
| CN112599616A (en) | Solar cell and manufacturing method thereof | |
| CN107293606A (en) | P-type IBC battery structures and preparation method thereof | |
| CN210866196U (en) | Photovoltaic cell local tunneling oxide layer passivation contact structure and photovoltaic module | |
| JP5756352B2 (en) | Manufacturing method of back electrode type solar cell | |
| CN103222064A (en) | Back electrode type solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |