CN107640972A - A kind of graphene carbonization composition - Google Patents
A kind of graphene carbonization composition Download PDFInfo
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- CN107640972A CN107640972A CN201710992588.7A CN201710992588A CN107640972A CN 107640972 A CN107640972 A CN 107640972A CN 201710992588 A CN201710992588 A CN 201710992588A CN 107640972 A CN107640972 A CN 107640972A
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- aluminum oxide
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Abstract
The invention discloses the invention discloses a kind of graphene carbonization composition, it is characterised in that including following weight proportion：Graphene crystal grain 24% 50%, silicon carbide wafer 2% 10%, carborundum grain 30% 45%, boron carbide particles 1% 10%, aluminum oxide embedded particles 4% 11%, the aluminum oxide embedded particles are sheet aluminum oxide embedded particles and rod-like aluminum oxide embedded particles, and the ratio of the rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 15:1, increase the performances such as intensity, hardness and the electric conductivity of silicon and its derivative, add its application, toughness reinforcing is combined to carborundum using aluminum oxide embedded particles, silicon carbide wafer and graphene, the aluminum oxide embedded particles are easy to uniformly mix with other materials, being distributed in silicon and its derivative for graphene uniform can be made, the application for enabling the performance of graphene good comes out, and reaches the purpose for changing silicon and its derivative property.
Description
Technical field
The present invention relates to technical field of graphene, specially a kind of graphene carbonization composition.
Background technology
Carborundum (SiC) is used as grinding agent due to hardness height and heat resistance and excellent in abrasion resistance, further, since just
Property high and thermal conductivity it is high, therefore in energetic domains and aerospace field, as the material for replacing metal etc., such as bearing and
Mechanical seal, member for use in semiconductor use.Carborundum further has the property as semiconductor, its monocrystalline quilt
It is the material being concerned by people for power device etc..
Graphene is that the two dimension for the only one layer atomic thickness for being stripped out from graphite material, being made up of carbon atom is brilliant
Body.Graphene has preferable electric conductivity and thermal conductivity, has very strong wilfulness and intensity, has in production and application very big
Prospect, the maximum characteristic of graphene is that the movement velocity of wherein electronics has reached the 1/300 of the light velocity, considerably beyond electronics one
As movement velocity in conductor.
Due to the superiority of graphene, for its performance considerably beyond silicon and its derivative, graphene is most potential at present should
With being substitute as silicon, add graphene in the derivative that silicon thinks silicon and can change silicon to a certain extent and spread out together
The performance of biological product, to improve the use range of silicon, increase the property such as intensity, hardness and the electric conductivity of silicon and its derivative
Energy.
The content of the invention
It is an object of the invention to provide a kind of graphene carbonization composition, asked with solve to propose in above-mentioned background technology
Topic.
To achieve the above object, the present invention provides following technical scheme：The invention discloses a kind of carbonization of graphene to combine
Thing, it is characterised in that including following weight proportion：
Graphene crystal grain 24%-50%
Silicon carbide wafer 2%-10%
Carborundum grain 30%-45%
Boron carbide particles 1%-10%
Aluminum oxide embedded particles 4%-11%.
Preferably, the aluminum oxide embedded particles are sheet aluminum oxide embedded particles and rod-like aluminum oxide embedded particles, institute
The ratio for stating rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 1-5:1.
Preferably, the graphene crystal has Hummers chemical methods to be made.
Preferably, the aluminum oxide embedded particles plate is between 0.4 micron to 0.7 micron, the aluminum oxide insertion
The ratio between particle plate width and thickness are between 4 to 11.
Compared with prior art, the beneficial effects of the invention are as follows：Graphene carbonization composition, increases silicon and its derivative
The performance such as intensity, hardness and electric conductivity, add its application, using aluminum oxide embedded particles, silicon carbide wafer and
Graphene is combined toughness reinforcing to carborundum, and the aluminum oxide embedded particles are easy to uniformly mix with other materials, can make graphite
Alkene is evenly distributed in silicon and its derivative, and the application for enabling the performance of graphene good comes out, and reach change silicon and
The purpose of its derivative property.
Embodiment
It is clearly and completely described below in conjunction with the technical scheme in the embodiment of the present invention, it is clear that described reality
It is only part of the embodiment of the present invention to apply example, rather than whole embodiments.It is general based on the embodiment in the present invention, this area
The every other embodiment that logical technical staff is obtained under the premise of creative work is not made, belong to what the present invention protected
Scope.
The present invention provides a kind of technical scheme：The invention discloses a kind of graphene carbonization composition, it is characterised in that bag
Include following weight proportion：
Graphene crystal grain 24%-50%
Silicon carbide wafer 2%-10%
Carborundum grain 30%-45%
Boron carbide particles 1%-10%
Aluminum oxide embedded particles 4%-11%.
Preferably, the aluminum oxide embedded particles are sheet aluminum oxide embedded particles and rod-like aluminum oxide embedded particles, institute
The ratio for stating rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 1-5:1.
Preferably, the graphene crystal has Hummers chemical methods to be made.
Preferably, the aluminum oxide embedded particles plate is between 0.4 micron to 0.7 micron, the aluminum oxide insertion
The ratio between particle plate width and thickness are between 4 to 11.
Embodiment one
A kind of graphene carbonization composition, comprises the following steps：
（1）The ratio of rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 2 in the aluminum oxide embedded particles:1；
（2）By 0.5%-3.0% C-B sintering aids, the polyvinyl alcohol with 1.0%-5.0%（PVA）, the 4%-11% aluminum oxide
Embedded particle, the 24%-50% graphene crystal grain, the 2.0%-10.0% silicon carbide wafer, boron carbide described in 1%-10%
Particle, dry ball milling mixing is carried out, compression molding, rare gas is filled with and forms non-oxygen environment, under conditions of non-oxygen, 90 DEG C-
300 DEG C of temperature range solidifications, then sinter 0.5-3.0 hours in 1600 DEG C of -2000 DEG C of temperature ranges, form silicon carbide ceramics production
Product composition.
Embodiment two
A kind of graphene carbonization composition, comprises the following steps：
（1）The ratio of rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 3 in the aluminum oxide embedded particles:1；
（2）By 0.5%-3.0% C-B sintering aids, the polyvinyl alcohol with 1.0%-5.0%（PVA）, the 4%-11% aluminum oxide
Embedded particle, the 24%-50% graphene crystal grain, the 2.0%-10.0% silicon carbide wafer, boron carbide described in 1%-10%
Particle, dry ball milling mixing is carried out, compression molding, rare gas is filled with and forms non-oxygen environment, under conditions of non-oxygen, 90 DEG C-
300 DEG C of temperature range solidifications, then sinter 0.5-3.0 hours in 1600 DEG C of -2000 DEG C of temperature ranges, form silicon carbide ceramics production
Product composition.
Embodiment three
A kind of graphene carbonization composition, comprises the following steps：
（1）The ratio of rod-like aluminum oxide embedded particles and sheet aluminum oxide embedded particles is 4 in the aluminum oxide embedded particles:1；
（2）By 0.5%-3.0% C-B sintering aids, the polyvinyl alcohol with 1.0%-5.0%（PVA）, the 4%-11% aluminum oxide
Embedded particle, the 24%-50% graphene crystal grain, the 2.0%-10.0% silicon carbide wafer, boron carbide described in 1%-10%
Particle, dry ball milling mixing is carried out, compression molding, rare gas is filled with and forms non-oxygen environment, under conditions of non-oxygen, 90 DEG C-
300 DEG C of temperature range solidifications, then sinter 0.5-3.0 hours in 1600 DEG C of -2000 DEG C of temperature ranges, form silicon carbide ceramics production
Product composition.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. the invention discloses a kind of graphene carbonization composition, it is characterised in that including following weight proportion：
Graphene crystal grain 24%-50%
Silicon carbide wafer 2%-10%
Carborundum grain 30%-45%
Boron carbide particles 1%-10%
Aluminum oxide embedded particles 4%-11%.
A kind of 2. graphene carbonization composition according to claim 1, it is characterised in that：The aluminum oxide embedded particles are
Sheet aluminum oxide embedded particles and rod-like aluminum oxide embedded particles, the rod-like aluminum oxide embedded particles are embedded in tabular alumina
The ratio of particle is 1-5:1.
A kind of 3. graphene carbonization composition according to claim 1, it is characterised in that：The graphene crystal has
Hummers chemical methods are made.
A kind of 4. graphene carbonization composition according to claim 2, it is characterised in that：The aluminum oxide embedded particles
Plate is between 0.4 micron to 0.7 micron, and the ratio between described aluminum oxide embedded particles plate width and thickness are between 4 to 11.
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| CN201710992588.7A CN107640972A (en) | 2017-10-23 | 2017-10-23 | A kind of graphene carbonization composition |
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| CN201710992588.7A CN107640972A (en) | 2017-10-23 | 2017-10-23 | A kind of graphene carbonization composition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110511001A (en) * | 2019-08-12 | 2019-11-29 | 上海利物盛企业集团有限公司 | A kind of preparation method of graphene conductive aluminium oxide ceramics |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101164978A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic composition containing silicon carbide whisker |
| CN101164972A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic composition containing silicon carbide wafer |
| CN101164980A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic containing silicon carbide wafer and rod-like aluminum oxide embedded particles |
| CN105110799A (en) * | 2015-07-09 | 2015-12-02 | 浙江长兴银兴窑业有限公司 | Toughened silicon carbide deck and making method thereof |
-
2017
- 2017-10-23 CN CN201710992588.7A patent/CN107640972A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101164978A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic composition containing silicon carbide whisker |
| CN101164972A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic composition containing silicon carbide wafer |
| CN101164980A (en) * | 2006-10-16 | 2008-04-23 | 宁波大学 | Silicon carbide ceramic containing silicon carbide wafer and rod-like aluminum oxide embedded particles |
| CN105110799A (en) * | 2015-07-09 | 2015-12-02 | 浙江长兴银兴窑业有限公司 | Toughened silicon carbide deck and making method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110511001A (en) * | 2019-08-12 | 2019-11-29 | 上海利物盛企业集团有限公司 | A kind of preparation method of graphene conductive aluminium oxide ceramics |
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Application publication date: 20180130 |
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