CN107634017A - Wafer annealing device - Google Patents
Wafer annealing device Download PDFInfo
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- CN107634017A CN107634017A CN201710734279.XA CN201710734279A CN107634017A CN 107634017 A CN107634017 A CN 107634017A CN 201710734279 A CN201710734279 A CN 201710734279A CN 107634017 A CN107634017 A CN 107634017A
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Abstract
A kind of wafer annealing device, including：Preheating chamber and processing chamber；Transmission platform, the preheating chamber, processing chamber are arranged at the transmission platform along the circumferentially fixed of the transmission platform；First transmission mechanism, the transmission platform is fixedly installed on, suitable for wafer is sent into the processing chamber from the preheating chamber.Wafer by preheating has of a relatively high temperature, when the higher wafer of relative temperature is positioned over further heated in processing chamber when, range of temperature of the wafer in processing chamber is relatively small, so that the range of temperature that bulb is heated in processing chamber is smaller, the probability of heating bulb-damage is reduced, improves the service life of heating bulb.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, and in particular to a kind of wafer annealing device.
Background technology
Ion implanting can cause to damage to the surface of wafer, silicon atom is left lattice position and cause lattice disorder.Cause
This using quick high-temp annealing process (Rapid thermal Process, RTP) to the wafer after ion implanting, it is necessary to be carried out
Repair.
In the prior art, quick high-temp annealing process generally is carried out to wafer using annealing device.Specifically, annealing device
With processing chamber, heating bulb is provided with processing chamber.When carrying out annealing process, wafer is arranged in processing chamber, added
Thermolamp is soaked light irradiation wafer, and wafer is heated；By controlling the watt level of heating bulb, heating bulb can be changed
The temperature distributed, so as to realize being rapidly heated and cool to wafer, annealing process is completed, lattice position is arranged in order
Row, so that wafer has preferable quality.
Due in annealing process, it is necessary in large temperature range change wafer temperature, thus need in larger temperature
In the range of change the temperature that is distributed of heating bulb, when the range of temperature for heating bulb is larger, easily cause heating lamp
Bubble damage, reduce the service life of heating bulb.
The content of the invention
The present invention solves the problems, such as be prior art annealing device processing chamber in heating bulb range of temperature
It is larger, it is easily damaged, reduces service life.
To solve the above problems, the present invention provides a kind of wafer annealing device, including：Preheating chamber and processing chamber；Pass
Defeated platform, the preheating chamber, processing chamber are arranged at the transmission platform along the circumferentially fixed of the transmission platform；First passes
Transfer mechanism, the transmission platform is fixedly installed on, suitable for wafer is sent into the processing chamber from the preheating chamber.
Optionally, the preheating chamber is corresponded with the processing chamber and set；Or, multiple preheating chambers correspond to
One processing chamber；Or, a preheating chamber corresponds to multiple processing chambers.
Optionally, the preheating chamber includes at least one-level preheating chamber, two level preheating chamber, first transmission mechanism
Suitable for wafer is sequentially delivered into two level preheating chamber, processing chamber from one-level preheating chamber.
Optionally, the wafer annealing device also includes cooling chamber, the preheating chamber, processing chamber and cooling chamber
Circumferentially fixed the transmission platform is arranged at along described.
Optionally, the wafer annealing device also includes wafer storeroom and the second transmission mechanism, second conveyer
Structure is arranged between wafer storeroom and cooling chamber.
Optionally, first transmission mechanism is mechanical arm or is arranged at the preheating chamber, processing chamber and cooling
Guide rail between chamber；And/or second transmission mechanism is mechanical arm or is arranged at the wafer storeroom and cooling chamber
Guide rail between room.
Optionally, the wafer storeroom at least two；And/or the cooling chamber at least two.
Optionally, heating bulb or furnace tubing are fixed with the preheating chamber, and/or, in the processing chamber
It is fixed with heating bulb or furnace tubing.
Optionally, the preheating chamber includes top cover, and the heating bulb is fixedly installed on the top cover.
Optionally, the preheating chamber also includes gas channel, suitable for the protective gas that circulates.
Compared with prior art, technical scheme has advantages below：
Described wafer annealing device, by setting preheating chamber, preheating chamber can preheat to wafer.By pre-
The wafer of heat has of a relatively high temperature, is further added when the higher wafer of relative temperature is positioned in processing chamber
When hot, range of temperature of the wafer in processing chamber is relatively small, so that heating the temperature of bulb in processing chamber
Excursion is smaller, reduces the probability of heating bulb-damage, improves the service life of heating bulb.
Further, by setting multiple preheating chambers, the corresponding processing chamber of multiple preheating chambers is made.When preheating institute
When the time of cost is more than annealing the spent time, by preheating polylith wafer in multiple preheating chambers simultaneously, then will
Wafer after preheating is successively sent in corresponding processing chamber, then can make full use of processing chamber, is improved annealing efficiency, is carried
Rise rhythm of production.
Further, by setting multiple processing chambers, a preheating chamber is made to correspond to multiple processing chambers.When preheating institute
When the time of cost is less than annealing the spent time, polylith wafer is preheated in multiple preheating chambers by priority, then will
Different wafers after preheating are sent in different processing chambers, then can make full use of preheating chamber, improve annealing efficiency,
Lift rhythm of production.
Further, by setting multistage preheating chamber, when wafer needs repeatedly to be preheated before the anneal, successively
Wafer is preheated in the preheating chamber of different stage.The quantity of preheating chamber can be according to wafer in different stage in different stage
Under preheating time be configured, so as to improve annealing efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of first embodiment of the invention annealing device；
Fig. 2 is transmission platform in annealing device shown in Fig. 1, the three-dimensional structure diagram of cooling chamber；
Fig. 3 is the structural representation of the preheating cavity in first embodiment of the invention annealing device；
Fig. 4 is distribution map of heating bulb shown in Fig. 3 on top cover；
Fig. 5 is the structural representation of second embodiment of the invention annealing device；
Fig. 6 is the structural representation of third embodiment of the invention annealing device；
Fig. 7 is the structural representation of fourth embodiment of the invention annealing device；
Fig. 8 is the heating curves figure of spike formula annealing process in quick high-temp annealing process of the present invention；
Fig. 9 is the heating curves figure of immersion annealing process in quick high-temp annealing process of the present invention.
Embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First embodiment
Reference picture 1, Fig. 2, a kind of wafer annealing device, including transmission platform M, preheating chamber A, processing chamber B and cooling
Cavity C (does not show preheating chamber A and processing chamber B) in Fig. 2, the preheating chamber A, processing chamber B and cooling chamber C are along institute
State the circumferentially fixed of transmission platform M and be arranged at the transmission platform M.Wherein, wafer annealing device include three preheating chamber A,
Three processing chamber B and Liang Ge cooling chamber C, respectively preheating chamber A1, preheating chamber A2, preheating chamber A3, processing chamber
B1, processing chamber B2, processing chamber B3 and cooling chamber C1, cooling chamber C2.
Wafer annealing device also includes three wafer storeroom D and two transmission mechanisms, respectively wafer storeroom D1, crystalline substance
Circle storeroom D2, wafer storeroom D3 and the first transmission mechanism J1, the second transmission mechanism J2.Wherein, the first transmission mechanism J1 consolidates
Surely the transmission platform M is arranged at, for wafer to be circulated between cooling chamber C, preheating chamber A and processing chamber B successively
Transmit.Second transmission mechanism J2 is fixedly installed between cooling chamber C and wafer the storeroom D, for by wafer storeroom D
In wafer be transferred to cooling chamber C, or the wafer in cooling chamber C is transferred to wafer storeroom D.
As shown in Fig. 2 wafer annealing device also includes support frame N, support frame N is used for the fixed support transmission platform M.
In the present embodiment, the preheating chamber A and processing chamber B, which are corresponded, to be set.
Specifically, preheating chamber A1 corresponds to processing chamber B1, the process that the first transmission mechanism J1 transmits wafer is followed successively by：It is cold
But cavity C, preheating chamber A1, processing chamber B1, finally pass cooling chamber C back.
Preheating chamber A2 corresponds to processing chamber B2, and the process that the first transmission mechanism J1 transmits wafer is followed successively by：Cooling chamber
C, preheating chamber A2, processing chamber B2, finally pass cooling chamber C back.
Preheating chamber A3 corresponds to processing chamber B3, and the process that the first transmission mechanism J1 transmits wafer is followed successively by：Cooling chamber
C, preheating chamber A3, processing chamber B3, finally pass cooling chamber C back.
In annealing process flow is carried out to wafer, wafer to be annealed is placed in any one wafer storeroom D, and second
Transmission mechanism J2 first takes out wafer from wafer storeroom D, and is placed in cooling chamber C；First transmission mechanism J1 is by crystalline substance
Circle takes out from cooling chamber C, and is placed in preheating chamber A, is preheated；Afterwards the first transmission mechanism J1 again by wafer from
Take out, and be placed in corresponding processing chamber B in preheating chamber A, annealed.After the completion for the treatment of wafer annealing, the first transmission
Mechanism J1 takes out wafer from processing chamber B, and is reapposed in cooling chamber C, is cooled down；Finally, the second transmission
Mechanism J2 takes out the wafer after cooling from cooling chamber C, reapposes in wafer storeroom D.Complete whole lehr attendant
Skill flow.
In technical field of semiconductors, quick high-temp annealing process (RTP) generally comprises：Spike formula annealing process (Spiking
Annealing) and immersion annealing process (Soak Annealing), selected according to different wafers and different technological requirements
Select different annealing way.
The heating curves figure of spike formula annealing process in reference picture 8, specially high-temperature annealing process.Wherein, annealing process
Including first stage and second stage.In the first stage, the temperature of wafer is heated to T1 from T0, and one is kept at a temperature of T1
The section time；In second stage, the temperature of wafer is heated to T2 from T1, and cooled after T2 temperature is reached, completes annealing.
The heating curves figure of immersion annealing process in reference picture 9, specially high-temperature annealing process.Wherein, annealing process
Including first stage and second stage.In the first stage, the temperature of wafer is heated to T1 from T0, and one is kept at a temperature of T1
The section time；In second stage, the temperature of wafer is heated to T2 from T1, and a period of time is kept at a temperature of T2, is then cooled,
Complete annealing.
In the prior art, the temperature of wafer is heated to T1 from T0, T2 process is heated to from T1, in processing chamber
Carry out, that is to say, that the range of temperature of bulb is heated in processing chamber to be needed between T0-T2, and heats the temperature of bulb
Degree excursion is bigger, then more easily causes the damage for heating bulb, reduce its service life.
In the present embodiment, wafer annealing device includes preheating chamber A, carries out annealing it wafer is put into processing chamber B
Before, the temperature of wafer can be heated to T1 by preheating chamber A from T0；When the temperature of wafer is heated into T1, first is recycled
Transmission mechanism J1 takes out the wafer in preheating chamber A, and corresponding to being positioned in processing chamber B, and processing chamber B is by wafer
Temperature is heated to T2 from T1.That is, the first stage is carried out in preheating chamber A, and second stage is carried out in processing chamber B.
That is, in processing chamber B heating bulb range of temperature between T1-T2, compared to existing skill
Art, the range of temperature of the heating bulb in processing chamber B is smaller, thus is less likely to be damaged, it is possible to increase heats bulb
Service life.
In a kind of specific spike formula annealing process, T0 is the temperature (about 20 DEG C) under normal temperature, and T1 is about 550 DEG C, T2
About 1100 DEG C.In the prior art in processing chamber the range of temperature of heating bulb need about 20 DEG C -1100 DEG C it
Between.Using the annealing device in the present embodiment, in its processing chamber B the range of temperature of heating bulb about 550 DEG C-
Between 1100 DEG C, can largely reduce heating bulb range of temperature it is smaller, improve service life.
In a kind of specific immersion annealing process, T0 is the temperature (about 20 DEG C) under normal temperature, and T1 is about 500 DEG C, T2
About 1050 DEG C.In the prior art in processing chamber the range of temperature of heating bulb need about 20 DEG C -1050 DEG C it
Between.Using the annealing device in the present embodiment, in its processing chamber B the range of temperature of heating bulb about 500 DEG C-
Between 1050 DEG C, can largely reduce heating bulb range of temperature it is smaller, improve service life.
It should be noted that for different wafers and different purposes, in spike formula annealing process, or immersion
In annealing process, T0, T1, T2 actual temp numerical value can change, but not influence the implementation of the technical program.
In the present embodiment, by the way that three preheating chamber A and three processing chamber B are fixedly installed in the transmission platform M, because
And three pieces of wafers can be made annealing treatment respectively simultaneously in same transmission platform M, increase transmission platform M utilization rate.
In other embodiment, preheating chamber A and processing chamber B quantity can be configured according to specific demand, the technical program
Restriction is not made to preheating chamber A and processing chamber B particular number.
In addition, by setting Liang Ge cooling chamber C, so as to be cooled down to two pieces of wafers simultaneously, lifted to wafer
Cooling effectiveness.But in other variations, cooling chamber C quantity can also be configured according to specific demand, no
Restriction is made to cooling chamber C particular number.
By setting three wafer storeroom D so that wafer storeroom D can store more wafers.Second conveyer
Structure J2 can extract wafer from any one in wafer storeroom D1, wafer storeroom D2 and wafer storeroom D3, be advantageous to
Automatically control, save human cost.But in other variations, wafer storeroom D quantity can also be according to specific need
Ask and be configured, restriction is not made to wafer storeroom D particular number.
In the present embodiment, the first transmission mechanism J1 effect is：Wafer is sequentially delivered to preheating cavity from cooling chamber C
Room A, processing chamber B and cooling chamber C.First transmission mechanism J1 can be specifically mechanical arm, be transmitted using mechanical arm brilliant
Circle；The guide rail that can also be provided between preheating chamber A, processing chamber B and cooling chamber C, wafer is transmitted using guide rail.
Likewise, the second transmission mechanism J2 can be specifically mechanical arm, wafer is transmitted using mechanical arm；Can also be
The guide rail being arranged between cooling chamber C and wafer storeroom D, wafer is transmitted using guide rail.
Reference picture 3, the preheating chamber A have pallet 10 and top cover 20, and pallet 10 is suitable to place wafer aa.Top cover 20 is set
There is heating bulb 21, heating bulb 21 is oppositely arranged with pallet 10, and can light wafer aa of the irradiation on pallet 10, with right
Wafer aa is heated.
That is, in preheating chamber A, wafer is preheated also by heating bulb, in the process, heating lamp
The range of temperature of bubble between T0-T1, compared with the prior art in processing chamber heating bulb range of temperature
It is small, equally it is less likely to be damaged.
Specifically, as shown in figure 4, heating bulb 21 is uniformly distributed in top cover 20, so as to uniformly shine to be multiple
Wafer is penetrated, wafer is uniformly heated up.
It should be noted that in other variations, can also furnace tubing be set in preheating chamber A to enter to wafer
Row heating, can also set furnace tubing to be heated to wafer in processing chamber B.The reality of the technical program is not influenceed
Apply.
With continued reference to Fig. 3, as shown by arrows, the preheating chamber A also includes gas channel 30, and gas is protected suitable for circulation
Body, protective gas are used to protect wafer aa, avoid in heating process, reacted between wafer aa and other gases.Wherein,
Protective gas can use nitrogen, argon gas or other inert gases.
With continued reference to Fig. 1, by taking preheating chamber A1, processing chamber B1, cooling chamber C1 and wafer storeroom D1 as an example, explanation
The working method of wafer annealing device：
Polylith wafer is positioned in wafer storeroom D1.Wafer annealing device is opened, the second transmission mechanism J2 is by wafer
One piece of wafer to be annealed in storeroom D1 is sent in cooling chamber C1；Afterwards, the first transmission mechanism J1 is by cooling chamber
Wafer in C1 is sent in preheating chamber A1, and wafer is heated in preheating chamber A1.When wafer is heated to T1 temperature,
Wafer is sent in processing chamber B1 by the first transmission mechanism J1, is made annealing treatment；After wafer completes annealing process, first
Transmission mechanism J1 takes out wafer from processing chamber B1, and sends back cooling chamber C1.
After wafer cools down in cooling chamber C1, the second transmission mechanism J2 retransfers back wafer wafer storeroom D1
Or other are suitable to the pallet of placement wafer.Now, another piece in wafer storeroom D1 can be waited to move back by the second transmission mechanism J2
The wafer of fire is sent in cooling chamber C1, is made annealing treatment.Reciprocation cycle, to realize to the polylith in wafer storeroom D1
Wafer is made annealing treatment.
Second embodiment
The difference of reference picture 5, the present embodiment and first embodiment is that wafer annealing device includes four preheating cavities
Room A, two processing chamber B, respectively preheating chamber A1, preheating chamber A2, preheating chamber A3, preheating chamber A4, processing chamber
B1 and processing chamber B2.
Wherein, preheating chamber A1, preheating chamber A3 correspond to the mistake of processing chamber B1, the first transmission mechanism J1 transmission wafer
Journey is followed successively by：Cooling chamber C, preheating chamber A1 or preheating chamber A3, processing chamber B1, finally pass cooling chamber C back.
Preheating chamber A2, preheating chamber A4 correspond to processing chamber B2.First transmission mechanism J1 transmit wafer process according to
It is secondary to be：Cooling chamber C, preheating chamber A2 or preheating chamber A4, processing chamber B2, finally pass cooling chamber C back.
Reference picture 8, in the first stage, the temperature of wafer is heated to T1 process from T0 to be needed to spend spike formula annealing process
The time taken is t1；In second stage, the time that the temperature of wafer is heated into T2 process from T1 needs to spend is t2.And
T1 ＞ t2.
In the prior art, the temperature of wafer is heated to T1 from T0, T2 process is heated to from T1, in processing chamber
Carry out.In such cases, the temperature of wafer is heated into the time that T1 (first stage) spent from T0 to be more than the temperature of wafer
The time for being heated to T2 (second stage) from T1 and being spent is spent, causes annealing efficiency not high, influences rhythm of production.
In the present embodiment, because preheating chamber A1, preheating chamber A3 correspond to processing chamber B1, thus can be in preheating chamber
Two pieces of wafers are preheated in A1, preheating chamber A3 respectively, when the temperature of wafer is heated to T1, two pieces of wafers are successively sent to work
In skill chamber B1.
Because the time spent needed for the first stage is relatively long, the time spent needed for second stage is relatively short, will
Two pieces of preheated wafers are alternately sent to processing chamber B1, so as to make full use of processing chamber B1, improve annealing efficiency,
Lift rhythm of production.
Likewise, because preheating chamber A2, preheating chamber A4 correspond to processing chamber B2, thus can preheating chamber A2,
Two pieces of wafers are preheated in preheating chamber A4 respectively, when the temperature of wafer is heated to T1, two pieces of wafers are successively sent to technique
In chamber B2.So as to make full use of processing chamber B2, annealing efficiency is improved, lifts rhythm of production.
In a kind of specific spike formula annealing process, the time t1 of first stage is about between 40s-70s, second-order
The time t2 of section is about between 10s-15s.
Using the annealing device in the present embodiment, wafer is heated respectively in preheating chamber A1, preheating chamber A3, waits to preheat
When wafer in chamber A1 is heated to temperature T1, the wafer is sent to processing chamber B1 and made annealing treatment.Meanwhile will be new
Wafer is sent to preheating chamber A1 and preheated；Taken out after the wafer in processing chamber B1 completes annealing, and will preheating
Preheated wafer is sent to processing chamber B1 in chamber A2.Meanwhile new wafer is sent to preheating chamber A2 and preheated.
Reciprocation cycle, it can largely lift wafer annealing efficiency.
It should be noted that for different wafers and different purposes, in spike formula annealing process, t1, t2's
Specific time numerical value can change, but not influence the implementation of the technical program.
In addition, according to t1, t2 concrete numerical value, the corresponding relation between preheating chamber and processing chamber can also be adjusted.
Such as：More preheating chambers are set, make the corresponding processing chamber of multiple preheating chambers, further to lift wafer annealing effect
Rate.
With continued reference to Fig. 5, with preheating chamber A1, preheating chamber A2, processing chamber B1, cooling chamber C1 and wafer storeroom
Exemplified by D1, illustrate the working method of wafer annealing device：
Polylith wafer is positioned in wafer storeroom D1.Wafer annealing device is opened, the second transmission mechanism J2 is by wafer
First piece of wafer to be annealed is sent in cooling chamber C1 in storeroom D1.Afterwards, the first transmission mechanism J1 is by described first
Block wafer is sent in preheating chamber A1, and wafer is heated in preheating chamber A1；Meanwhile second transmission mechanism J2 wafer is stored up
Second piece of wafer to be annealed in the D1 of room is hidden to be sent in cooling chamber C1.Afterwards, the first transmission mechanism J1 is by described second piece
Wafer is sent in preheating chamber A2, and wafer is heated in preheating chamber A2.
When first piece of wafer is heated to T1 temperature, first piece of wafer is sent to processing chamber by the first transmission mechanism J1
In B1, made annealing treatment；Meanwhile second transmission mechanism J2 the 3rd piece of wafer to be annealed in wafer storeroom D1 is sent to
In cooling chamber C1, the 3rd piece of wafer is sent in preheating chamber A1 by the first transmission mechanism J1, and wafer is in preheating chamber
It is heated in A1.
After first piece of wafer completes annealing process, the first transmission mechanism J1 takes wafer from processing chamber B1
Go out, and send back in cooling chamber C1.Afterwards, when second piece of wafer is heated to T1 temperature, the first transmission mechanism J1 is by
Two pieces of wafers are sent in processing chamber B1, are made annealing treatment.
After wafer cools down in cooling chamber C1, the second transmission mechanism J2 retransfers back wafer wafer storeroom D1
Or other are suitable to the pallet of placement wafer.Afterwards, the second transmission mechanism J2 is by the 4th piece of crystalline substance to be annealed in wafer storeroom D1
Circle is sent in cooling chamber C1, and the 4th piece of wafer is sent in preheating chamber A2 by the first transmission mechanism J1, and wafer exists
It is heated in preheating chamber A2.
After resuming waiting for second piece of wafer completion annealing process, and taken out from processing chamber B1, be sent to cooling chamber
In C1, cooled down.Reciprocation cycle.
3rd embodiment
The difference of reference picture 6, the present embodiment and first embodiment is that wafer annealing device includes two preheating cavities
Room A, four processing chamber B, respectively preheating chamber A1, preheating chamber A2, processing chamber B1, processing chamber B2, processing chamber
B3 and processing chamber B4.
Wherein, preheating chamber A1 corresponds to processing chamber B1, processing chamber B3, the first transmission mechanism J1 transmit the mistake of wafer
Journey is followed successively by：Cooling chamber C, preheating chamber A1, processing chamber B1 or processing chamber B3, finally pass cooling chamber C back.
Preheating chamber A2 corresponds to processing chamber B2, processing chamber B4.First transmission mechanism J1 transmit wafer process according to
It is secondary to be：Cooling chamber C, preheating chamber A2, processing chamber B2 or processing chamber B4, finally pass cooling chamber C back.
Reference picture 9, in the first stage, the temperature of wafer is heated to T1 process from T0 to be needed to spend immersion annealing process
The time taken is t1；In second stage, the time that the temperature of wafer is heated into T2 process from T1 needs to spend is t2.And
T1 ＜ t2.
In the prior art, the temperature of wafer is heated to T1 from T0, T2 process is heated to from T1, in processing chamber
Carry out.In such cases, the temperature of wafer is heated into the time that T1 (first stage) spent from T0 to be less than the temperature of wafer
The time for being heated to T2 (second stage) from T1 and being spent is spent, causes annealing efficiency not high, influences rhythm of production.
In the present embodiment, because preheating chamber A1 corresponds to processing chamber B1, processing chamber B3, thus can be in preheating chamber
Two pieces of wafers are successively preheated in A1, when the temperature of wafer is heated to T1, two pieces of wafers are sent to processing chamber B1, work respectively
In skill chamber B3.
Because the time spent needed for the first stage is relatively short, the time spent needed for second stage is relatively long, will
Two pieces of wafers are alternately sent to processing chamber B1, processing chamber B3, so as to make full use of preheating chamber A1, improve annealing effect
Rate, lift rhythm of production.
Likewise, because preheating chamber A2 corresponds to processing chamber B2, processing chamber B4, thus can be in preheating chamber A2
Two pieces of wafers are successively preheated, when the temperature of wafer is heated to T1, two pieces of wafers are sent to processing chamber B2, process cavity respectively
In the B4 of room.So as to make full use of preheating chamber A2, annealing efficiency is improved, lifts rhythm of production.
In a kind of specific immersion annealing process, the time t1 of first stage is about between 15s-20s, second-order
The time t2 of section is about between 30s-50s.
Using the annealing device in the present embodiment, two pieces of wafers are successively heated in preheating chamber A1, treat preheating chamber A1
In first piece of wafer when being heated to temperature T1, the wafer is sent in processing chamber B1 and made annealing treatment.Meanwhile by
Two pieces of wafers are sent to preheating chamber A1 and preheated；, will when second piece of wafer in preheating chamber A1 is heated to temperature T1
The wafer is sent in processing chamber B2 and made annealing treatment.Meanwhile the 3rd piece of wafer is sent to preheating chamber A1 and carried out in advance
Heat.Taken out after the wafer in processing chamber B1 completes annealing, and by the 3rd piece of wafer preheated in preheating chamber A1
It is sent to processing chamber B1.Meanwhile the 4th piece of wafer is sent to preheating chamber A1 and preheated.Reciprocation cycle, can be larger
Wafer annealing efficiency is lifted in degree.
It should be noted that for different wafers and different purposes, in immersion annealing process, t1, t2's
Specific time numerical value can change, but not influence the implementation of the technical program.
In addition, according to t1, t2 concrete numerical value, the corresponding relation between preheating chamber and processing chamber can also be adjusted.
Such as：More processing chambers are set, a preheating chamber is corresponded to multiple processing chambers, further to lift wafer annealing effect
Rate.
Fourth embodiment
The difference of reference picture 7, the present embodiment and first embodiment is that wafer annealing device includes four preheating cavities
Room A, two processing chamber B, respectively preheating chamber A11, preheating chamber A21, preheating chamber A12, preheating chamber A22, technique
Chamber B1 and processing chamber B2.
Wherein, preheating chamber A11, preheating chamber A12 are one-level preheating chamber；Preheating chamber A21, preheating chamber A22 are
Two level preheating chamber.That is, the wafer annealing device of the present embodiment has the function of dual preheating.
Specifically, preheating chamber A11, preheating chamber A21, which correspond to processing chamber B1, the first transmission mechanism J1, transmits wafer
Process be followed successively by：Cooling chamber C, preheating chamber A11, preheating chamber A21, processing chamber B1, finally pass cooling chamber C back.
Preheating chamber A12, preheating chamber A22 correspond to processing chamber B2, the first transmission mechanism J1 and transmit the process of wafer
It is followed successively by：Cooling chamber C, preheating chamber A12, preheating chamber A22, processing chamber B2, finally pass cooling chamber C back.
Preheating time of the wafer under different stage is simultaneously different, therefore, can be according to the preheating time under different stage
Length, the specific quantity that preheating chamber in different stage is set, so as to improve annealing efficiency, lift rhythm of production.
The present embodiment needs the situation that two-stage preheats suitable for wafer annealing process.
As shown in fig. 7, with preheating chamber A11, preheating chamber A21, processing chamber B1, cooling chamber C1 and wafer storeroom
Exemplified by D1, illustrate the working method of wafer annealing device：
Polylith wafer is positioned in wafer storeroom D1.Wafer annealing device is opened, the second transmission mechanism J2 is by wafer
One piece of wafer to be annealed in storeroom D1 is sent in cooling chamber C1；Afterwards, the first transmission mechanism J1 is by cooling chamber
Wafer in C1 is sent in preheating chamber A11, and wafer is heated for the first time in preheating chamber A11；Afterwards, the first conveyer
Wafer in preheating chamber A11 is sent in preheating chamber A21 by structure J1, and wafer is heated for the second time in preheating chamber A21.
When wafer is heated to design temperature, wafer is sent in processing chamber B1 by the first transmission mechanism J1, is carried out
Annealing；After wafer completes annealing process, the first transmission mechanism J1 takes out wafer from processing chamber B1, and sends back
Cooling chamber C1.
After wafer cools down in cooling chamber C1, the second transmission mechanism J2 retransfers back wafer wafer storeroom D1
Or other are suitable to the pallet of placement wafer.Now, another piece in wafer storeroom D1 can be waited to move back by the second transmission mechanism J2
The wafer of fire is sent in cooling chamber C1, is made annealing treatment.Reciprocation cycle, to realize to the polylith in wafer storeroom D1
Wafer is made annealing treatment.
It should be noted that in other embodiments, the preheating chamber of more levels can also be set, to be carried out to wafer
The pre-heat treatment of more numbers.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. wafer annealing device, it is characterised in that including：Preheating chamber and processing chamber；Transmission platform, the preheating chamber, processing chamber are arranged at the transmission platform along the circumferentially fixed of the transmission platform；First transmission mechanism, the transmission platform is fixedly installed on, suitable for wafer is sent into the work from the preheating chamber Skill chamber.
- 2. wafer annealing device as claimed in claim 1, it is characterised in that the preheating chamber and the processing chamber are one by one It is correspondingly arranged；Or, multiple corresponding processing chambers of the preheating chamber；Or, a preheating chamber correspond to it is multiple The processing chamber.
- 3. wafer annealing device as claimed in claim 1, it is characterised in that the preheating chamber includes at least one-level preheating cavity Room, two level preheating chamber, first transmission mechanism are suitable to wafer being sequentially delivered to two level preheating cavity from one-level preheating chamber Room, processing chamber.
- 4. the wafer annealing device as described in claim any one of 1-3, it is characterised in that described pre- also including cooling chamber Hot chamber, processing chamber and cooling chamber circumferentially fixed are arranged at the transmission platform along described.
- 5. wafer annealing device as claimed in claim 4, it is characterised in that also including wafer storeroom and the second conveyer Structure, second transmission mechanism are arranged between wafer storeroom and cooling chamber.
- 6. wafer annealing device as claimed in claim 5, it is characterised in that first transmission mechanism is mechanical arm or set The guide rail being placed between the preheating chamber, processing chamber and cooling chamber；And/or second transmission mechanism is mechanical arm or is arranged at leading between the wafer storeroom and cooling chamber Rail.
- 7. wafer annealing device as claimed in claim 5, it is characterised in that the wafer storeroom at least two；With/ Or, the cooling chamber at least two.
- 8. wafer annealing device as claimed in claim 1, it is characterised in that heating bulb is fixed with the preheating chamber Or furnace tubing, and/or, heating bulb or furnace tubing are fixed with the processing chamber.
- 9. wafer annealing device as claimed in claim 8, it is characterised in that the preheating chamber includes top cover, the heating Bulb is fixedly installed on the top cover.
- 10. wafer annealing device as claimed in claim 1, it is characterised in that the preheating chamber also includes gas channel, fits In circulation protective gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710734279.XA CN107634017A (en) | 2017-08-24 | 2017-08-24 | Wafer annealing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710734279.XA CN107634017A (en) | 2017-08-24 | 2017-08-24 | Wafer annealing device |
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| CN107634017A true CN107634017A (en) | 2018-01-26 |
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| CN201710734279.XA Pending CN107634017A (en) | 2017-08-24 | 2017-08-24 | Wafer annealing device |
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Cited By (1)
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| CN117238815A (en) * | 2023-11-15 | 2023-12-15 | 上海谙邦半导体设备有限公司 | Wafer preheating and cooling device and wafer conveying method |
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