CN107622941A - A kind of doping method of wide bandgap semiconductor - Google Patents
A kind of doping method of wide bandgap semiconductor Download PDFInfo
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- CN107622941A CN107622941A CN201610569556.1A CN201610569556A CN107622941A CN 107622941 A CN107622941 A CN 107622941A CN 201610569556 A CN201610569556 A CN 201610569556A CN 107622941 A CN107622941 A CN 107622941A
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Abstract
The present invention relates to a kind of broad-band gap (or broad stopband) doping method of semiconductor, including following characteristics：The region that wide band gap semiconducter wafer workpiece needs to adulterate is exposed first, including plane or groove, Doped ions are injected with PIC method in plasma immersion ion injection technique to the region being exposed, the Doped ions of injection are mainly on surface, depth is less than 3000A, finally, uses annealing heat-treats, activation injection ion, forms doped region.
Description
Technical field
The present invention relates to a kind of broad-band gap (or broad stopband) doping method of semiconductor, more particularly to one kind
Such as carborundum or gallium nitride semiconductor device PIC method in plasma immersion ion injection technique form the manufacture method of doping.
Background technology
Mostly can only operate in less than 250 DEG C using the traditional integrated circuit of silicon device, it is impossible to meet high temperature, high power and
The requirement such as high frequency.Central, the wide band gap semiconducter such as novel semiconductor material such as carborundum or gallium nitride is most gazed at and studied by people,
In order to just what is stated, the present invention is stated with exemplified by carborundum below.
Manufacturing silicon carbide semiconductor material has broad-band gap, high saturation drift velocity, high heat conductance, high critical breakdown electric field etc. prominent
Go out advantage, be particularly suitable for making high-power, high pressure, high temperature, Flouride-resistani acid phesphatase electronic device.
Wide (210eV≤the E of carborundum energy gapg≤ 710eV), leakage current several orders of magnitude smaller than silicon.Moreover, carborundum
Heat endurance is fabulous, and for intrinsic temperature up to more than 800 DEG C, it ensure that the long-term reliability in hot operation.Pass through analysis
The figure of merit, such as the Johnson figures of merit, (JFOM- reflects the height of corresponding device by the breakdown electric field of material, saturated electron drift velocity
Power, high-frequency performance), (KFOM- is anti-by the thermal conductivity, saturated electron drift velocity and dielectric constant of material for the Keyes figures of merit
The switching speed and heat for reflecting corresponding device limit) and the hot figure of merit (breakdown electric field, breakdown electric field and thermal conductivity that QFOM- passes through material
Rate reflects the heat dispersion of corresponding device), it is found that these figures of merit of carborundum SiC are all higher than existing frequently-used semi-conducting material
Go out a lot, is to realize a kind of ideal material with reference to high temperature and high-frequency high-power.
Carborundum breakdown electric field is higher, is 8 times of silicon materials, this is very key to power device.Conducting resistance is with hitting
Cube being inversely proportional for electric field is worn, so the conducting resistance of carborundum SiC power devices only has the hundred to 21 percent of silicon device,
The significant energy consumption for reducing electronic equipment.Therefore, carborundum SiC power devices are also described as driving " the green of " new energy revolution "
The energy " device.Power device manufactured by carborundum SiC out has low than conducting resistance, senior engineer's working frequency and high temperature work
The advantages of making stability, possess very wide application prospect.
With the successive commercialization of 6H, 4H-SiC body material, carborundum SiC device technique, such as oxidation, doping, etching and
Metal, semiconductor contact, all increasingly ripe, these lay a good foundation for the development and application of carborundum SiC device.
Wherein, doping is to make the indispensable process of power device.Bond strength based on carborundum SiC is high, and impurity expands
Dissipate required temperature (1800 DEG C of ＞).Substantially exceed the condition of normal component technique, inter-level dielectric and grid oxic horizon
(SiO2, Si3N4) etc. can not bear so high temperature, so the doping in device making technics can not use diffusion technique, only
Extension control doping and high temperature tension doping can be utilized.
Epi dopant can utilize silicon carbide source gas flow to change, and make doping concentration control from being lightly doped (1014/cm3)
(＞ 10 is adulterated to degeneracy19/cm3) scope.Silane, propane are the typical epitaxial gas sources of carborundum SiC.6H-SiC is in silicon
(Si) the typical growth rate of homoepitaxy is 3um/ hours in the n-type substrate of face.In growth response room, by adjusting gas source
Ratio come carry out position competition extension, impurity is located at lattice position.Growth on the substrate of carbon (C) face is then different but right
Its growth mechanism there is no deep understanding.
Because diffusion technique can not be used to adulterate, ion implantation technology is extremely important in element manufacturing.Carborundum is come
Say, n-type doping mainly injection nitrogen (N) ion.Aluminium (Al) and boron (B) are typical p-type doped chemical, produce it is relatively deep by
Main energy level (being respectively 211meV and 300meV), Al ionization energy are less than B ionization energy, and the activationary temperature of Al requirements is lower than B；And
B atomic ratio Al atoms are light, and damage is less caused by injection, and injection scope is deeper, should select to note according to device technology requirement
Enter element；For gallium nitride, n-type doping mainly injection silicon (Si) ion, p-type doping then mainly injection manganese (Mg) from
Son.
But if being injected with traditional ion implantation apparatus, when ion implantation dosage is excessive, lattice damage can be led to,
Decrystallized structure is formed, substantially reduces original performance.For carborundum, the decrystallized implantation dosage threshold of document report
Value, N is about 4 × 1015/cm2, Al is about 1 × 1015/cm2, B is about 5 × 1015/cm2.Meanwhile also need to add high temperature to substrate,
About 650 DEG C are needed when typically being injected to N, about 700~800 DEG C are needed when being injected to Al, it is caused when injecting ion to reduce
Decrystallized structure occur.Existing many ion implantation apparatuses applied to silicon technology cannot all reach so high temperature.Moreover,
In order to ensure the temperature equalization on substrate, each substrate quantity and size into ion implantation apparatus is also by limitation, and these are all
Cost is made to increase.
Injection higher doses or substrate can cause more lattice damages, make lattice structure when being not reaching to required temperature
Heavy damage, decrystallized layer thicken.Even if using high annealing heat treatment (1500 DEG C of ＞) after injection, it has been found that a large amount of lattice damages
Wound, the lattice of no all damages of decree restore completely.Some lattices that can be restored can also produce stress during recrystallization,
After reaching some thickness, material is made to produce slight crack.
The content of the invention
It is an object of the invention to propose a kind of to be avoided that above-mentioned deficiency and one kind of practical is applied to broad-band gap half
The processing technology of the doping of conductor device, method are that the processing of doping is formed with PIC method in plasma immersion ion injection technique
Technique.PIC method in plasma immersion ion injects, and English is referred to as Plasma Immersion Ion Implantation (PIII).
Plasma immersion ion injection technique is a kind of new ion implantation technique, turns into hot research field at present, its is main
Handled applied to material surface to improve its polishing machine.Plasma refers under the electric field action of some strength, gas
Middle internal band point particle occurs to accelerate mutual collision rift, ionic discharge and a kind of material for being formed.And plasma injects,
It is exactly plasma by injecting external Doped ions to matrix to reach the purpose of doping.
The equipment of plasma immersion and ion implantation is as shown in figure 1, by plasma source, the pulse power, vacuum chamber, sample
Heat the departments such as platform, perforating mesh and vavuum pump composition.In a plasma immersion ion implantation system.Doped ions
Circulation is controlled mainly by the power of electromagnetic coupled, and the energy of ion is mainly determined by the RF power biased.
Cation capacitation under electric field action, impinges perpendicularly on sample surfaces, has reached the mesh of sample surfaces injection Doped ions
's.Compared with traditional ion implantation technique, rotary sample is not needed in experimentation, because formed in vacuum chamber etc.
Ion is to belong to diffuse type, can reach the effect of 360 ° of submergences and injection.Whole ion implant systems equipment is relatively simple, easily
What device increased temperature to sample when injecting pays oil (gas) filling device.Plasma immersion and ion implantation is the system of a low energy
Journey, its ion energy are typically less than 1keV, fewer than the Implantation Energy of traditional ion implantation apparatus a lot, are less susceptible to sample table
Face lattice makes injury, and implementing the present invention has kinds of schemes, is the key step for implementing some of schemes below.
Scheme one：
1. required Doped ions are injected in the region that pair broad-band gap wafer workpiece need to adulterate with plasma immersion ion method,
There is dielectric layer protection on the surface of doped region, and thickness is less than 500A, dielectric layer can be silicon nitride or silica etc., it is necessary to
The region of doping can be plane, can be groove or part be plane and part be groove, injecting
When, underlayer temperature does not specially require, and can be less than room temperature, can be room temperature, can also be higher than room temperature；
2. just carrying out annealing heat-treats after completing above-mentioned steps 1, lattice damage is removed；
3. it is last, using annealing heat-treats, activation injection ion, form high-concentration dopant area.
In step (2), between described annealing heat-treats temperature is 600 to 1200 DEG C, the time is 10 minutes to 500 points
Between clock, lattice damage is repaiied again.
In step (3), including following steps：
1. remove the dielectric layer on surface；
2. original original on surface is prevented as protective layer Come in top surface depositing silicon silicon (SiC) or graphite (C) layer
Son evaporation；
3. carrying out the annealing heat-treats described in step (3), between temperature is 1200 to 1800 DEG C, the time is 10 minutes
To between 500 minutes, the Doped ions having been injected into are activated；
4. remove sealer.
Scheme two：
1. required Doped ions are injected in the region that pair broad-band gap wafer workpiece need to adulterate with plasma immersion ion method,
There is dielectric layer protection on the surface of doped region, and thickness is less than 500A, dielectric layer can be silicon nitride or silica etc., it is necessary to
The region of doping can be plane, can be groove or part be plane and part be groove, injecting
When, underlayer temperature is maintained at 300C between 800C, and the lattice damage caused by ion implanting is removed immediately；
2. it is last, using annealing heat-treats, activation injection ion, form doped region.
In step (2), including following steps：
A. the dielectric layer on surface is removed；
B. original original on surface is prevented as protective layer Come in top surface depositing silicon silicon (SiC) or graphite (C) layer
Son evaporation；
C. the annealing heat-treats described in step (2) are carried out, between temperature is 1200 to 1800 DEG C, the time is 10 minutes
To between 500 minutes, the Doped ions having been injected into are activated；
D. sealer is removed.
Scheme three：
It is similar with scheme one before and scheme two, it is mainly using the same of heat treatment activation injection ion step respectively
When, with the surface of the ionic bombardment sample of appropriate energy, depth is the Doped ions depth of injection, the ionic species as shock
It is not particularly limited, energy is generally less than 50KeV, is primarily used to help the ion for activating injection so that required activation
Annealing temperature is less than 1200C, and especially deprotection surface Come is not just had to when so activating to be prevented original vaporised atom on surface and draw
Play roughening.
Compared with prior art, the beneficial effects of the invention are as follows：
Use the present invention to prepare highly doped surface with relatively easy, and the doping concentration on surface than it is existing with from
The concentration that sub- implanter is formed is higher, and to the side wall of groove, doping can be more uniform, there is no dead angle, and is fabricated to
This can greatly reduce；Shortcoming is to be not suitable for being used for preparing deeper doping, as doping depth is more than 0.5 micron of just this unavailable hair
It is bright.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, is used to explain the present invention together with embodiments of the present invention,
It is not construed as limiting the invention：
The schematic diagram of Fig. 1 plasma immersion ion method injected systems；
The silicon nitride on Fig. 2 surfaces exposes the schematic diagram in the region for needing n-type high-concentration dopant；
Fig. 3 injects the schematic diagram of required Doped ions with plasma immersion ion method；
The silicon nitride on Fig. 4 surfaces exposes the schematic diagram in the region for needing p-type high-concentration dopant；
Fig. 5 injects the schematic diagram of required Doped ions with plasma immersion ion method；
Ion-activated schematic diagrames of the Fig. 6 through Overheating Treatment injection.
Reference symbol table：
1 silicon carbide substrates
2 silicon carbide epitaxial layers
The P bases of 3 devices
4 silica films
5 thick-layer silicon nitrides
The N+ areas of 6 devices
The P+ contact zones of 7 devices
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein preferred real
Example is applied, by taking carborundum as an example, for instruction and explanation of the present invention, is not intended to limit the present invention.
The present invention relates to a kind of the doping system of wide band gap semiconducter is formed with PIC method in plasma immersion ion injection technique
Method is made, is comprised the following steps：
The region that wide band gap semiconducter wafer workpiece needs to adulterate is exposed first.The region being exposed is used etc.
Gas ions plasma immersion ion implantation technology injects Doped ions.And then annealing heat-treats are utilized, lattice damage is removed.Most
Afterwards, with the annealing heat-treats of higher temperature, activation injection ion, doped region is formed.
Embodiment：
As shown in Fig. 2 silicon carbide epitaxial layers 2 are placed in the top of substrate, p-type doped region 3 is built on epitaxial layer 2, then
One layer of thin silica (thickness is less than 100A) and one layer of thicker silicon nitride (thickness is more than 1000A) are formed on surface, it
Accumulation lithography coating afterwards, certain media is exposed using mask, dry corrosion then is carried out to the certain media exposed, until exposure
Go out silica, then remove the lithography coating on surface.
As shown in figure 3, with the Doped ions of plasma immersion and ion implantation method implant n-type, underlayer temperature is maintained at
300C immediately removes the lattice damage caused by ion implanting between 800C, the Doped ions of injection mainly on surface,
Depth is less than 1000A.
As shown in figure 4, then one layer of thicker silicon nitride of accumulation (thickness is more than 1000A) and lithography coating, utilize mask
Certain media is exposed, dry corrosion then is carried out to the certain media exposed, until the upper surface of silicon carbide epitaxial layers is exposed,
Then carve and touch silicon carbide, form ditch grain, the width of groove is more than 0.2um, and depth is more than 0.3um, can be strip, side
Shape opening, circular open or other any geometries.
As shown in figure 5, the lithography coating on surface is removed, with plasma immersion and ion implantation method implanted with p-type Doped ions,
Underlayer temperature is maintained at 300C between 800C, and the lattice damage caused by ion implanting is removed immediately, the doping of injection from
Son is mainly on surface, and p-type doping is mainly injected to aluminium (A1) or boron (B) ion, depth are less than 1000A.
Shown in Fig. 6, the dielectric layer on surface is removed, is made afterwards in top surface depositing silicon silicon (SiC) or graphite (C) layer
Original vaporised atom on surface is prevented for protection Come, carries out annealing heat-treats, between temperature is 1200 to 1800 DEG C, the time 10
Between minute to 500 minutes, the Doped ions having been injected into are activated, then remove carborundum (SiC) of the surface as protection
Or graphite (C) layer.
Finally it should be noted that：Embodiments of the invention are these are only, are not intended to limit the invention, the present invention can
For being related to the process for forming doping in manufacture wide bandgap semiconductor device technique with ion implanting, wherein device includes insulation
Gate transistor (MOS), igbt (IGBT) or diode or Schottky diode.Although with reference to embodiment pair
The present invention is described in detail, and for those skilled in the art, it can still be remembered to foregoing embodiments
The technical scheme of load is modified, or equivalent substitution is carried out to which part technical characteristic, but all spirit in the present invention
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (6)
1. a kind of doping method of wide bandgap semiconductor, it is characterised in that at least comprise the following steps：
1. need the region adulterated to be exposed wide band gap semiconducter wafer workpiece first, including plane or groove
, Doped ions are injected with PIC method in plasma immersion ion injection technique to the region being exposed, in injection, underlayer temperature
Mei You Te Do requirements, can be less than room temperature, can be room temperature, can also be higher than room temperature, the Doped ions of injection are mainly in table
Face, depth are less than 3000A；
2. just carrying out annealing heat-treats after completing above-mentioned steps 1, lattice damage is removed, described annealing heat-treats temperature is
Between 600 to 1200 DEG C, the time is between 10 minutes to 500 minutes；
3. then, using annealing heat-treats, between temperature is 1200 to 1800 DEG C, the time is between 10 minutes to 500 minutes,
The Doped ions activation having been injected into, forms doped region.
2. the doping method of a kind of wide bandgap semiconductor according to claim 1, it is characterised in that in the step (3)
Annealing heat-treats, if wide band gap semiconducter is carborundum, when carrying out high-temperature heat treatment, it is necessary to top surface deposit
Carborundum (SiC) or graphite (C) layer prevent original vaporised atom on surface as protection Come.
3. a kind of doping method of wide bandgap semiconductor, it is characterised in that at least comprise the following steps：
1. need the region adulterated to be exposed wide band gap semiconducter wafer workpiece first, including plane or groove
, Doped ions are injected with PIC method in plasma immersion ion injection technique to the region being exposed, in injection, underlayer temperature
It is maintained between 300 DEG C to 800 DEG C, the lattice damage caused by ion implanting is removed immediately, the Doped ions of injection is main
It is in surface, the few 3000A of depth；
2. then, using annealing heat-treats, between temperature is 1200 to 1800 DEG C, the time is between 10 minutes to 500 minutes,
The Doped ions activation having been injected into, forms high-concentration dopant area.
4. the doping method of a kind of wide bandgap semiconductor according to claim 3, it is characterised in that in the step (2)
Annealing heat-treats, if wide band gap semiconducter is carborundum, when carrying out high-temperature heat treatment, it is necessary to top surface deposit
Carborundum (SiC) or graphite (C) layer prevent original vaporised atom on surface as protection Come.
5. a kind of doping method of wide bandgap semiconductor, it is characterised in that at least comprise the following steps：
1. need the region adulterated to be exposed wide band gap semiconducter wafer workpiece first, including plane or groove
, Doped ions are injected with PIC method in plasma immersion ion injection technique to the region being exposed, in injection, underlayer temperature
Do not specially require, room temperature can be less than, can be room temperature, room temperature can also be higher than, the Doped ions of injection are mainly in table
Face, the few 3000A of depth；
2. just carrying out annealing heat-treats after completing above-mentioned steps 1, lattice damage is removed, described annealing heat-treats temperature is
Between 600 to 1200 DEG C, the time is between 10 minutes to 500 minutes；
3. then, activating injection ion using annealing heat-treats Come, high-concentration dopant area is formed, heat treatment temperature is less than 1200
DEG C, the time is between 10 minutes to 500 minutes, while injection ion step is activated with annealing heat-treats, with appropriate energy
Ionic bombardment sample surface, depth is the Doped ions depth of injection, and the ionic species as shock is not particularly limited,
Energy is generally less than 50KeV, is primarily used to help the ion for activating injection so that required activation annealing temperature is less than
1200℃。
6. a kind of doping method of wide bandgap semiconductor, it is characterised in that at least comprise the following steps：
1. need the region adulterated to be exposed wide band gap semiconducter wafer workpiece first, including plane or groove
, Doped ions are injected with PIC method in plasma immersion ion injection technique to the region being exposed, in injection, underlayer temperature
It is maintained between 300 DEG C to 800 DEG C, the lattice damage caused by ion implanting is removed immediately, the Doped ions of injection is main
It is in surface, the few 3000A of depth；
2. then, activating injection ion using annealing heat-treats Come, high-concentration dopant area is formed, heat treatment temperature is less than 1200
DEG C, the time is between 10 minutes to 500 minutes, while injection ion step is activated with annealing heat-treats, with appropriate energy
Ionic bombardment sample surface, depth is the Doped ions depth of injection, and the ionic species as shock is not particularly limited,
Energy is generally less than 50KeV, is primarily used to help the ion for activating injection so that required activation annealing temperature is less than
1200℃。
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| CN109473347A (en) * | 2018-12-06 | 2019-03-15 | 北京大学 | A method of introducing impurity into silicon and by impurity activation |
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