CN107611548A - A kind of microwave power divider and preparation method based on flexible substrate - Google Patents
A kind of microwave power divider and preparation method based on flexible substrate Download PDFInfo
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- CN107611548A CN107611548A CN201710838018.2A CN201710838018A CN107611548A CN 107611548 A CN107611548 A CN 107611548A CN 201710838018 A CN201710838018 A CN 201710838018A CN 107611548 A CN107611548 A CN 107611548A
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- power divider
- microwave power
- microstrip line
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Abstract
A kind of microwave power divider and preparation method based on flexible substrate, including flexible PET substrate and the dielectric layer of high dielectric constant that is arranged on flexible PET substrate upper surface, microwave power divider metal level is provided with the upper surface of dielectric layer of high dielectric constant.A floor height dielectric constant barium titanate dielectric layer is coated as microstrip line dielectric layer using the method for magnetron sputtering on flexible PET substrate.The design and emulation for certain dielectric constant and power divider structure are realized followed by ADS simulation softwares, generates power divider structure mask plate, and complete to make a plate.The mask plate photoetching prepared then carries out evaporation of metal and worked so as to realize under a upper frequency and the preparation of the RF power divider of flexible work in the flexible PET substrate for completing magnetron sputtering dielectric layer of high dielectric constant.The present invention prepares high performance flexible radio frequency power divider structure on flexible substrates, realizes the normal work of the circuit under differently curved state.
Description
Technical field
The present invention relates to a kind of microwave power divider.Distributed more particularly to a kind of microwave power based on flexible substrate
Device and preparation method.
Background technology
Flexible electronic be by organic and inorganic material electronicses element manufacturing on flexible, Drawability plastics or thin metal matrix plate
New electronic science and technology, all there is extensive use in fields such as information, the energy, medical treatment, national defence.Such as print RFID, electronics table
Face stickup, Organic Light Emitting Diode OLED, flexible electronic displays etc..
The content of the invention
The technical problem to be solved by the invention is to provide one kind can realize the normal work of circuit under differently curved state
The microwave power divider and preparation method based on flexible substrate made.
The technical solution adopted in the present invention is：A kind of microwave power divider in flexible substrate, including, flexible PET
Substrate and the dielectric layer of high dielectric constant being arranged on the flexible PET substrate upper surface, the dielectric layer of high dielectric constant
Microwave power divider metal level is provided with upper surface.
The working frequency of the microwave power divider is 0.8-1.2Ghz.
Described microwave power divider metal level includes what is be made up of microstrip line：The power divider input of linear
Unit, input be connected to the output end of the power divider input block first shape supply unit and second
Shape supply unit, the first two-fold bending output that input is correspondingly connected to the output end of first shape supply unit are single
Member, input are correspondingly connected to the second two-fold bending output unit of the output end of second shape supply unit, and described
The output end of one output unit forms the output end of microwave power divider first, the output end of the second double-bending output unit
Form the output end of microwave power divider second.
Described first shape supply unit and second shape supply unit is symmetrical arranged and collectively forms rectangular configuration；It is described
First two-fold bending output unit and the second two-fold bending output unit are symmetrical arranged.
Described first shape supply unit, second shape supply unit, the first two-fold bending output unit and second pair
The bending part of bending shape output unit is arc fold bending.
The electrical conductivity of the microstrip line is 5.88E+7.
A kind of preparation method of microwave power divider in flexible substrate, comprises the following steps：
1) the general principle figure of power divider is designed in ADS simulation softwares, is made using microstrip line in microstrip circuit
For the basic microstrip line unit of power splitter, the line and design between each basic microstrip line unit are completed, initializes microstrip line
Basic length and width parameter, designs symmetrical network structure；
2) relevant parameter of microstrip line is provided；
3) simulation and optimization that S parameter is target is carried out to microstrip circuitry figure, addition optimization control, 0.8Ghz- is set
1.2Ghz is target operating frequency section and S parameter in the numerical requirements of the frequency separation, is completed to each microstrip line list
The optimal design-aside of member；
4) emulated, obtain the curve of S parameter, and contrasted with target, obtained after more than 15 times optimization
Optimal result；
5) domain of power divider is generated, carries out diagram optimizing post-simulation, obtains simulation curve, preserves domain；
6) mask plate is prepared according to the domain of generation, magnetron sputtering produces 97.2 high-ks on PET substrate
Dielectric layer；
7) PET substrate is cleaned in ultrasound using acetone and isopropanol, 1813 is then being carried out on substrate after cleaning just
Property photoresist spin coating, the spin coating speed is 4K rotating speeds, carries out the 30s times, and PET substrate is carried out 3 minutes after spin coating
The front baking of 115 ° of temperature；
8) alignment photoetching is carried out to PET substrate according to the mask plate of preparation, forms the pattern of power divider；
9) in the enterprising row metal evaporation of power divider pattern of formation, the gold electrode metal level that thickness is 500nm is formed,
The microwave power divider in flexible substrate is obtained after being removed photoresist to PET substrate.
Microstrip line described in step 1) is Coupled Miccrostrip Lines or arc-shaped micro-strip line or general microstrip line.
The relevant parameter of microstrip line described in step 2), including：Substrate thickness is arranged to 0.5mm, relative Jie of microstrip line
Electric constant is 97.2, and the electrical conductivity of microstrip line is 5.88E+7, and the packaging height of microstrip circuit is 1.0e+33mm, the gold of microstrip line
It is 500nm to belong to thickness degree, and the characteristic impedance of input port is 50 Europe, and the characteristic impedance of output port is 70 Europe, micro- so as to obtain
Length with line and wide respectively 998.784um and 8.7451um.
A kind of microwave power divider and preparation method based on flexible substrate of the present invention, emulate to obtain by ADS soft
The layout design of property power divider, using magnetron sputtering dielectric layer of high dielectric constant, evaporation of metal growing technology after photoetching,
High performance flexible radio frequency power divider structure is prepared in flexible substrate, realizes the normal work of the circuit under differently curved state
Make.The present invention has preferable performance and higher working frequency, is expected in the future in wearable electronic, extensive flexible integration
Circuit etc. obtains extensive use.
Brief description of the drawings
Fig. 1 is the side view of the microwave power divider of the invention based on flexible substrate；
Fig. 2 is the top view of the microwave power divider of the invention based on flexible substrate；
Fig. 3 is the simulation parameter result figure of the microwave power divider S11 parameters of the invention based on flexible substrate；
Fig. 4 is the simulation parameter result figure of the microwave power divider S21 parameters of the invention based on flexible substrate.
In figure
1：Flexible PET substrate 2：Dielectric layer of high dielectric constant
3：Microwave power divider metal level 3.1：Power divider input block
3.2：First shape supply unit 3.3：Second shape supply unit
3.4：First two-fold bending output unit 3.5：Second two-fold output unit
3.6：Dielectric layer of high dielectric constant
Embodiment
With reference to embodiment and accompanying drawing to a kind of microwave power divider and preparation based on flexible substrate of the invention
Method is described in detail.
As shown in figure 1, the microwave power divider in a kind of flexible substrate of the present invention, including, the flexible He of PET substrate 1
The dielectric layer of high dielectric constant 2 being arranged on the upper surface of flexible PET substrate 1, the upper end of the dielectric layer of high dielectric constant 2
Microwave power divider metal level 3 is provided with face.The working frequency of the microwave power divider is 0.8-1.2Ghz.
As shown in Fig. 2 described microwave power divider metal level 3 includes what is be made up of microstrip line：The work(of linear
Rate distributor input block 3.1, input are connected to first of the output end of the power divider input block 3.1
Shape supply unit 3.2 and second shape supply unit 3.3, input are correspondingly connected to first shape supply unit 3.2
First two-fold bending output unit 3.4 of output end, input are correspondingly connected to the output of second shape supply unit 3.3
The second two-fold bending output unit 3.5 at end, the output end of first output unit 3.4 form microwave power divider first
Output end, the output end of the second two-fold output unit 3.5 form the output end of microwave power divider second.Described first
3.2, second shape supply units 3.3 of door shape supply unit, the first two-fold 3.4 and second two-fold bending of bending output unit output
The bending part of unit 3.5 is arc fold bending.The electrical conductivity of the microstrip line is 5.88E+7.
Described first shape supply unit 3.2 and second shape supply unit 3.3 is symmetrical arranged and collectively forms rectangle knot
Structure；The first two-fold 3.4 and second two-fold bending output unit 3.5 of bending output unit is symmetrical arranged.
Microwave power divider main operational principle in a kind of flexible substrate of the present invention, passes through microwave power divider
Input port be attached the signal of upper frequency, high integration is realized using the dielectric layer of high dielectric constant of symmetrical structure
Design, the basic theories based on microstrip line, design are completed high-frequency energy signal and are divided into two, and the function of being divided into two deciles is realized.
The present invention completes the design of power divider on flexible PET substrate first, is realizing under differently curved state circuit just
Often work, the large-scale integrated for flexible radio frequency circuit provide possibility.
Fig. 3 is the simulation parameter result figure of the microwave power divider S11 parameters of the invention based on flexible substrate, and S11 joins
Number represents the return losses of circuit, as shown in figure 3, in 0.8Ghz-1.2Ghz frequency range circuit return loss compared with
It is low, indicate the better performances of the circuit in this frequency；
Fig. 4 is the simulation parameter result figure of the microwave power divider S21 parameters of the invention based on flexible substrate, and S21 joins
Number represents the insertion loss of circuit, as shown in figure 4, the insertion loss of circuit is stable simultaneously in 0.8Ghz-1.2Ghz frequency ranges
It is higher, indicate the better performances of circuit in this frequency.
The preparation method of microwave power divider in the flexible substrate of the present invention, comprises the following steps：
1) the general principle figure of power divider is designed in ADS simulation softwares, is made using microstrip line in microstrip circuit
For the basic microstrip line unit of power splitter, the line and design between each basic microstrip line unit are completed, initializes microstrip line
Basic length and width parameter, designs symmetrical network structure, described microstrip line is Coupled Miccrostrip Lines or arc-shaped micro-strip line or one
As microstrip line；
2) relevant parameter of microstrip line is provided；
The relevant parameter of described microstrip line, including：Substrate thickness is arranged to 0.5mm, the relative dielectric constant of microstrip line
For 97.2, the electrical conductivity of microstrip line is 5.88E+7, and the packaging height of microstrip circuit is 1.0e+33mm, the metal thickness of microstrip line
Spend for 500nm, the characteristic impedance of input port is 50 Europe, and the characteristic impedance of output port is 70 Europe, so as to obtain microstrip line
Long and wide respectively 998.784um and 8.7451um.
3) simulation and optimization that S parameter is target is carried out to microstrip circuitry figure, addition optimization control, 0.8Ghz- is set
1.2Ghz is target operating frequency section and S parameter in the numerical requirements of the frequency separation, is completed to each microstrip line list
The optimal design-aside of member；
4) emulated, obtain the curve of S parameter, and contrasted with target, obtained after more than 15 times optimization
Optimal result；
5) domain of power divider is generated, carries out diagram optimizing post-simulation, obtains simulation curve, preserves domain；
6) mask plate is prepared according to the domain of generation, magnetic control splashes in PET (PET) plastic supporting base
Penetrate the dielectric layer for producing 97.2 high-ks；
7) PET substrate is cleaned in ultrasound using acetone and isopropanol, 1813 is then being carried out on substrate after cleaning just
Property photoresist spin coating, the spin coating speed is 4K rotating speeds, carries out the 30s times, and PET substrate is carried out 3 minutes after spin coating
The front baking of 115 ° of temperature；
8) alignment photoetching is carried out to PET substrate according to the mask plate of preparation, forms the pattern of power divider；
9) in the enterprising row metal evaporation of power divider pattern of formation, the gold electrode metal level that thickness is 500nm is formed,
The microwave power divider in flexible substrate is obtained after being removed photoresist to PET substrate.
Claims (9)
1. the microwave power divider in a kind of flexible substrate, it is characterised in that including, flexible PET substrate (1) and be arranged on institute
State the dielectric layer of high dielectric constant (2) on flexible PET substrate (1) upper surface, the upper surface of the dielectric layer of high dielectric constant (2)
On be provided with microwave power divider metal level (3).
2. the microwave power divider in a kind of flexible substrate according to claim 1, it is characterised in that the microwave work(
The working frequency of rate distributor is 0.8-1.2Ghz.
3. the microwave power divider in a kind of flexible substrate according to claim 1, it is characterised in that described microwave
Power divider metal level (3) includes what is be made up of microstrip line：The power divider input block (3.1) of linear, input
End is connected to first shape supply unit (3.2) and second of the output end of the power divider input block (3.1)
It is first two-fold to be correspondingly connected to the output end of first shape supply unit (3.2) for door shape supply unit (3.3), input
It is second two-fold to be correspondingly connected to the output end of second shape supply unit (3.3) for bending output unit (3.4), input
Bending output unit (3.5), the output end of first output unit (3.4) form the output end of microwave power divider first,
The output end of the second double-bending output unit (3.5) forms the output end of microwave power divider second.
4. the microwave power divider in a kind of flexible substrate according to claim 3, it is characterised in that described first
Door shape supply unit (3.2) and second shape supply unit (3.3) are symmetrical arranged and collectively form rectangular configuration；Described first is two-fold
Bending output unit (3.4) and the second two-fold bending output unit (3.5) are symmetrical arranged.
5. the microwave power divider in a kind of flexible substrate according to claim 3, it is characterised in that described first
Door shape supply unit (3.2), second shape supply unit (3.3), the first two-fold bending output unit (3.4) and the second double-bending
The bending part of shape output unit (3.5) is arc fold bending.
6. the microwave power divider in a kind of flexible substrate according to claim 3, it is characterised in that the microstrip line
Electrical conductivity be 5.88E+7.
A kind of 7. preparation method of the microwave power divider in flexible substrate described in claim 1, it is characterised in that including
Following steps：
1) the general principle figure of power divider is designed in ADS simulation softwares, using microstrip line in microstrip circuit as work(
Divide the basic microstrip line unit of device, complete line and design between each basic microstrip line unit, initialize the basic of microstrip line
Length and width parameter, design symmetrical network structure；
2) relevant parameter of microstrip line is provided；
3) simulation and optimization that S parameter is target is carried out to microstrip circuitry figure, addition optimization control, 0.8Ghz- is set
1.2Ghz is target operating frequency section and S parameter in the numerical requirements of the frequency separation, is completed to each microstrip line list
The optimal design-aside of member；
4) emulated, obtain the curve of S parameter, and contrasted with target, obtained after more than 15 times optimization of progress optimal
As a result；
5) domain of power divider is generated, carries out diagram optimizing post-simulation, obtains simulation curve, preserves domain；
6) mask plate is prepared according to the domain of generation, magnetron sputtering produces Jie of 97.2 high-ks on PET substrate
Matter layer；
7) PET substrate is cleaned in ultrasound using acetone and isopropanol, 1813 positivity light is then carried out on substrate after cleaning
The spin coating of photoresist, the spin coating speed are 4K rotating speeds, carry out the 30s times, carry out 115 ° of 3 minutes to PET substrate after spin coating
The front baking of temperature；
8) alignment photoetching is carried out to PET substrate according to the mask plate of preparation, forms the pattern of power divider；
9) in the enterprising row metal evaporation of power divider pattern of formation, the gold electrode metal level that thickness is 500nm is formed, it is right
PET substrate obtains the microwave power divider in flexible substrate after removing photoresist.
8. the preparation method of the microwave power divider in flexible substrate according to claim 7, it is characterised in that step
1) microstrip line described in is Coupled Miccrostrip Lines or arc-shaped micro-strip line or general microstrip line.
9. the preparation method of the microwave power divider in flexible substrate according to claim 7, it is characterised in that step
2) relevant parameter of the microstrip line described in, including：Substrate thickness is arranged to 0.5mm, and the relative dielectric constant of microstrip line is 97.2,
The electrical conductivity of microstrip line is 5.88E+7, and the packaging height of microstrip circuit is 1.0e+33mm, and the metal layer thickness of microstrip line is
500nm, the characteristic impedance of input port is 50 Europe, and the characteristic impedance of output port is 70 Europe, so as to obtain the length of microstrip line and
Width is respectively 998.784um and 8.7451um.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108399292A (en) * | 2018-02-12 | 2018-08-14 | 中天宽带技术有限公司 | A kind of wide frequency shifter power distributing circuit construction design method |
| CN110854488A (en) * | 2019-11-25 | 2020-02-28 | 天津大学 | Band-pass filter based on flexible substrate and manufacturing method |
| CN110890609A (en) * | 2019-11-25 | 2020-03-17 | 天津大学 | Coplanar waveguide based on flexible substrate and manufacturing method |
| CN110971260A (en) * | 2019-11-28 | 2020-04-07 | 天津大学 | Flexible pi-type radio frequency matching circuit and manufacturing method thereof |
| CN111211801A (en) * | 2019-11-28 | 2020-05-29 | 天津大学 | Flexible T-shaped radio frequency matching circuit and manufacturing method thereof |
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| CN110971260A (en) * | 2019-11-28 | 2020-04-07 | 天津大学 | Flexible pi-type radio frequency matching circuit and manufacturing method thereof |
| CN111211801A (en) * | 2019-11-28 | 2020-05-29 | 天津大学 | Flexible T-shaped radio frequency matching circuit and manufacturing method thereof |
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