CN107611541A - Terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof - Google Patents
Terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof, belongs to Terahertz communication and technical field of imaging.Terahertz waveguide duplexer is hollow cavity structure, is prepared using bulk silicon MEMS technique, including first wave guide bandpass filter, second waveguide bandpass filter and hybrid-T knot.First output port of first wave guide bandpass filter and the second output port of second waveguide bandpass filter connect the input port of two horizontal minor matters of hybrid-T knot respectively.It is of the invention can works fine in Terahertz frequency range, there is compact-sized and high performance feature, suitable for Terahertz communication system or terahertz imaging system.
Description
Technical field
The present invention relates to a kind of terahertz waveguide duplexer based on bulk silicon MEMS technique and preparation method thereof, belong to terahertz
Hereby communication and technical field of imaging.
Background technology
Terahertz duplexer is the key components of Terahertz communication system and imaging system.Duplexer is divided into double with frequency
Work device and the class of frequency-selecting duplexer two.It is different using two working frequencies when two branch road working frequency differences of duplexer
The frequency-selecting duplexer designed based on bandpass filter will be especially suitable for Terahertz communication and imaging system.
In millimeter wave frequency band, because electromagnetic wavelength is near 1cm, duplexer can use precision machined method
Process.But in millimeter magnitude, material property and the limitation of preparation technology generally are limited in Terahertz frequency range, wavelength,
The design requirement of fine structure can not have been met using traditional machining processes.Resonance structure is included for this inside of duplexer
Function element for, the influence of the precision of processing technology to device performance is even more very significant, and the error of processing dimension will
Good and bad produce of duplexer performance can directly be influenceed.At present, the machining accuracy of bulk silicon MEMS technique can reach micron amount
Level, and because it uses silicon chip to be especially suitable for the processing of Terahertz function element as substrate and integrate.
The content of the invention
The purpose of the present invention is to be combined bulk silicon MEMS technique with frequency-selecting duplexer, proposes that one kind is based on bulk silicon MEMS work
Terahertz waveguide duplexer of skill and preparation method thereof, can works fine in Terahertz frequency range, there is compact-sized and high-performance
The characteristics of, suitable for Terahertz communication system or terahertz imaging system.
Realize that technical scheme is as follows：
The terahertz waveguide duplexer of the present invention is integrally prepared using bulk silicon MEMS technique, including first wave guide bandpass filtering
Device, second waveguide bandpass filter and hybrid-T knot.First wave guide bandpass filter, second waveguide bandpass filter respectively with T
Shape waveguide junction is connected, and integrated composition has three ports (first input port, the second input port, the 3rd output port)
Hollow cavity structure.
First wave guide bandpass filter, second waveguide bandpass filter structures are identical, and size dimension is different.First wave guide band
Bandpass filter, second waveguide bandpass filter are operated in different frequency, and the high filter size of passband central frequency is less than passband
The low wave filter of centre frequency, and the passband of the first wave guide bandpass filter not passband weight with second waveguide bandpass filter
It is folded.
Multilayer rectangle hollow waveguide cavity level is respectively adopted in first wave guide bandpass filter and second waveguide bandpass filter
The structure of connection.Every layer of rectangular hollow waveguide cavity is hollow cuboid, and the hollow cuboid is dug on two surfaces respectively up and down
Rectangular through-hole, electromagnetism wave energy is inputted from the top of hollow cuboid, export from below, and filter will not be leaked out from four sides
Ripple device.Every layer of rectangular hollow waveguide cavity is formed on silicon chip, and the hollow parts thickness of every layer of rectangular hollow waveguide cavity is homogeneous
Together, but size differs.Every layer of rectangular hollow waveguide cavity is in cascade, its lower surface and next layer of rectangular hollow waveguide chamber
The upper surface of body is connected, the rectangle coupling window of one connection of through hole formation in two faces, the electromagnetic wave in hollow waveguide cavity
It is transmitted to by coupling window mouth in next layer, ensures input port of the electromagnetic wave along waveguide bandpass filter towards output port
One way propagation.In order to improve the aligning accuracy of every layer of rectangular hollow waveguide cavity, duplexer is being made using bulk silicon MEMS technique
When, on every layer of silicon chip, in addition to the position that rectangular hollow waveguide cavity is formed except reserving, it is also necessary to not with rectangle hollow
Positioning slot structure is etched on the position that the physical arrangement of wave-guide cavity wave clashes.The first of first wave guide bandpass filter is defeated
Inbound port and the first output port, and the second input port of second waveguide bandpass filter and the second output port are mark
The rectangular waveguide of object staff cun.
First wave guide bandpass filter and second waveguide bandpass filter are excellent using the design method based on coupling matrix
Change its appearance and size.The design method based on coupling matrix is centre frequency, the relative bandwidth in given filter passband
After the technical indicator such as insertion loss, the coefficient of coup and external sort factor of bandpass filter are adjusted, so as to obtain first wave
The specific appearance and size of conduction band bandpass filter and second waveguide bandpass filter.Specific method is：
Step 1, influence of the bandpass filter centre frequency to every layer of hollow waveguide cavity size size is considered, by formula
(1) size of every layer of hollow waveguide cavity size is drawn.
Wherein, fmnlFor the centre frequency of bandpass filter, c is the light velocity in vacuum, μrFor relative permeability, εrFor electricity relatively
Conductance, m, n, l represent the half cycle of length direction change of the field amplitude of electromagnetic wave in wave-guide cavity wave along hollow waveguide cavity
Issue, a, b, d are respectively the size of the length and width and height, i.e. hollow waveguide cavity of hollow waveguide cavity.Due to every layer it is hollow
Intercoupled between wave-guide cavity wave, the working frequency of simulation result can be caused to shift.For the skew of work for correction frequency,
Also need to simulation optimization and adjust the length of every layer of hollow waveguide cavity and wide size.The every layer of hollow waveguide cavity ultimately formed
Size differs.
Step 2, the hollow waveguide cavity coupling window that the external sort factor of bandpass filter is connected with input port is considered
The relation of mouth size, external sort factor is obtained by formula (2).
Qe=g0g1/FBW (2)
Wherein, QeFor the external sort factor of bandpass filter, g0For the original paper value of 0 rank Chebyshev's low-pass prototype, g1For 1 rank
The original paper value of Chebyshev's low-pass prototype, FBW are the relative bandwidth of wave filter.According to the external sort factor being calculated, lead to
The mode of simulation optimization is crossed, often changes the size for once coupling window, the simulation result of an external sort factor is obtained, with public affairs
The result of calculation that formula (2) obtains compares, until it is consistent with result of calculation that coupling window is adjusted into simulation result.Finally, obtain
The hollow waveguide cavity coupling window size being connected with bandpass filter input port.Obtained by the method and first input end
The connected hollow waveguide cavity coupling window size of mouth and the hollow waveguide cavity coupling window being connected with the second input port are big
It is small.
Step 3, consider the different bandpass filter coefficients of coup to the coupling window chi between every layer of hollow waveguide cavity
The influence of very little size, to wherein any one layer of hollow waveguide cavity, the coefficient of coup is obtained by formula (3).
Wherein, Mi,i+1For the bandpass filter coefficient of coup, giFor the original paper value of i rank Chebyshev's low-pass prototypes, gi+1For i+
The original paper value of 1 rank Chebyshev's low-pass prototype.By way of simulation optimization, often change the size for once coupling window, obtain
One insertion loss simulation result in operating frequency range, according to formula (4),
Wherein, M is the coefficient of coup obtained by simulation result, fhIt is the peak that frequency is higher in insertion loss simulation result
Corresponding frequency, flIt is frequency corresponding to frequency is relatively low in insertion loss simulation result peak.The coefficient of coup that will be calculated
As a result it is compared with emulating obtained coefficient of coup result, the size of adjustment coupling window, until result of calculation is tied with emulation
Fruit is consistent, so as to obtain the coupling window size between this layer of hollow waveguide cavity.According to the method for step 3, all phases are obtained
Coupling window size between adjacent two layers of hollow waveguide cavity.
By step 1- steps 3, the specific profile of first wave guide bandpass filter and second waveguide bandpass filter is obtained
Size.
First output port of first wave guide bandpass filter and the second output port of second waveguide bandpass filter point
Not Lian Jie hybrid-T knot two horizontal minor matters input port.The size and first of two minor matters input ports of hybrid-T knot
Waveguide bandpass filter, the output port size of second waveguide bandpass filter are identical, input port and output port without
Seam connection.Bit errors during in order to reduce connection, the position that can not contacted in actual processing on silicon chip with hybrid-T knot
Etch locating slot, position and the first wave guide bandpass filter and the locating slot of each layer of second waveguide bandpass filter of the locating slot
Position correspondence is identical, by making positioning slot structure overlapping by the position alignment of input port and output port and overlapping.
The hybrid-T knot is a T-shaped hollow cavity structure, and the structure using the cascade of multilayer waveguide cavity.
In order to ensure that the electromagnetic wave of two minor matters of left and right will not be revealed mutually, hybrid-T bears water the left and right ends branch of flat minor matters
It is different to save length.Left minor matters are connected with first wave guide bandpass filter, and right minor matters are connected with second waveguide bandpass filter, Zuo Zhi
Section is different from the working frequency of right minor matters.The length of left and right minor matters is calculated by formula (5).
Wherein, l1And l2The length of left minor matters and right minor matters, λ are represented respectively1And λ2First wave guide bandpass filtering is represented respectively
Operation wavelength corresponding to the working frequency of device and second waveguide bandpass filter.And left and right minor matters are finally determined by simulation optimization
Length.
It is main feeder perpendicular to the part of horizontal minor matters, the effect of main feeder is by left and right minor matters in hybrid-T knot
Energy hybrid and be transmitted.3rd output port of main feeder and the input port of left and right minor matters are rectangular waveguide, and
The size all same of port.
The first input port and the second input port are connected with the Terahertz antenna of similar frequency bands respectively, and antenna receives
The THz wave of different frequency, the THz wave of two different frequencies are entered by first input port and the second input port respectively
Enter to inside terahertz waveguide duplexer.The hybrid circuit structure entered from two input ports inside duplexer is defeated by the 3rd
Exit port is passed in next stage circuit.
The terahertz waveguide duplexer inside cavity is air or vacuum.
The terahertz waveguide duplexer cavity inner wall sputtering gold processing.
The terahertz waveguide duplexer of the present invention is prepared using bulk silicon MEMS technique, is comprised the following steps that：
Step 1, using electromagnetic simulation software, according to above-mentioned terahertz waveguide diplexer structure, establish and meet given technology
The simulation model of the waveguide duplexer of index request, including first wave guide bandpass filter, second waveguide bandpass filter and T-shaped
Waveguide junction.
Step 2, thickness value t (t is the thickness that bulk silicon MEMS technique often uses silicon chip) is chosen, in the Terahertz that step 1 obtains
With thickness t in the simulation model of waveguide duplexer, along the plane perpendicular to terahertz waveguide duplexer Electromagnetic Wave Propagation direction
On, continuous several times interception can on one layer of silicon chip dual surface lithography graphical window, obtaining multilayer has dual surface lithography graphical window
Domain.In order to improve aligning accuracy when each layer rectangular hollow waveguide cavity stacks in actual fabrication, devised on domain
Slot structure is positioned, positioning slot structure is not in contact with the figure of waveguide duplexer.When stacking hollow waveguide cavity, every layer is directed at
The locating slot of hollow waveguide cavity is it is ensured that aligning accuracy.
Step 3, a twin polishing soi wafer, the version with dual surface lithography graphical window obtained using step 2 are chosen
Figure, using bulk silicon MEMS technique in the two-sided formation feed waveguide of twin polishing soi wafer and duplexer with rectangular cavities
Structure, and locating slot, so as to obtain single rectangular hollow waveguide cavity.
Step 4, multiple twin polishing soi wafers are chosen, are utilized respectively and identical technology mode in step 3, etching shape
Into feed waveguide and the diplexer structure with rectangular cavities, polylith single rectangular hollow waveguide cavity is obtained.
Step 5, using sputtering gold process, the silicon for the polylith single rectangular hollow waveguide cavity that step 3 and step 4 are obtained
Groove side and bottom metalization.
Step 6, using Jin-golden thermocompression bonding technology, by the individual layer for being etched with rectangular cavities metallized in step 5
The silicon chip component of waveguide duplexer is bonded together two-by-two.
Step 7, using slot structure is positioned, if the silicon chip component of dried layer waveguide duplexer in step 6 is used into what is be mechanically fixed
Mode is assembled, and obtains waveguide duplexer processed finished products.
Beneficial effect
The terahertz waveguide duplexer of the present invention breaches the key technology of Terahertz system application, can be used for Terahertz
Wave radar system, the reception of communication system or front end of emission.The waveguide duplexer is using the operation principle of frequency-selecting duplexer as base
Plinth, realize that two are operated in the different wave filter of passband in the form of the cascade of multilayer rectangle cavity；Between each layer rectangular cavities
Using the design method of coupling matrix, the insertion loss and standing-wave ratio of wave filter can be reduced；The output port of two wave filters
The unequal hybrid-T knot of a minor matters length is connected, the isolation of two input ports is effectively raised, reduces two
Interference phenomenon between branch road.
The waveguide filter physical characteristic made using bulk silicon MEMS technique meets the processing of Terahertz frequency range function element
It is required that and machining accuracy it is higher, comparison of coherence is good.Meanwhile with the precision machined two-dimensional metallic duplexer of tradition
Compare, the terahertz waveguide duplexer made using bulk silicon MEMS technique have three-dimensional cramped construction, be easy to system its
The characteristics of his function element is integrated.
Brief description of the drawings
Fig. 1 is the topology diagram of duplexer of the embodiment of the present invention；
Fig. 2 is the wave filter tomograph of duplexer of the embodiment of the present invention, wherein (1) is first wave guide bandpass filter
Tomograph, (2) be second waveguide bandpass filter tomograph；
Fig. 3 is the hybrid-T knot tomograph of duplexer of the embodiment of the present invention；
Fig. 4 is the tomograph of duplexer of the embodiment of the present invention；
Fig. 5 is that the bulk silicon MEMS technique of duplexer of the embodiment of the present invention is layered schematic diagram；
Fig. 6 is that the bulk silicon MEMS technique of duplexer of the embodiment of the present invention prepares schematic diagram；
Fig. 7 is the insertion loss simulation result of duplexer of the embodiment of the present invention；
Fig. 8 is the 3rd output port standing-wave ratio simulation result of duplexer of the embodiment of the present invention；
Fig. 9 is the first input port and the second input port standing-wave ratio simulation result of duplexer of the embodiment of the present invention；
Figure 10 is the first input port and the second input port isolation simulation result of duplexer of the embodiment of the present invention；
Label declaration：1- first wave guide bandpass filters, 2- second waveguide bandpass filters, 3- first input ports, 4-
First output port, the input ports of 5- second, the output ports of 6- second, 7- main feeders, the output ports of 8- the 3rd, 9-T shape waveguides
Knot.
Embodiment
The present invention will now be described in detail with reference to the accompanying drawings and examples.
Embodiment
The invention provides a kind of terahertz waveguide duplexer, its topological structure is as shown in figure 1, first wave guide bandpass filtering
The passband central frequency of device is f1, with a width of △ f1, and the passband central frequency of second waveguide bandpass filter is f2, with a width of △
F2, f1 are higher than f2.The structure of its filter segment is as shown in Fig. 2 hybrid-T knot divides the three-dimensional structure as shown in figure 3, overall
As shown in figure 4, the duplexer is designed and optimized based on the operation principle of frequency-selecting duplexer：Feeding classification is
WR2.8 (0.712mm × 0.356mm) waveguide direct feed, the input port one of feed share two, i.e. first input port
It is identical with WR2.8 with the second input port, the size of the two input ports；First input port and the second input port difference
Three layers of different cavity waveguide bandpass filter of two working frequencies are connected, every layer of cavity of waveguide bandpass filter is according to coupling
The design principle of matrix, is connected by the way of cascade；A left side is connect below the output port of two waveguide bandpass filters
The different hybrid-T knot of right minor matters length, the output port of T-shaped knot main feeder are the 3rd output port, the 3rd output port
Size is identical with WR2.8.
The design objective requirement of the terahertz waveguide duplexer：The centre frequency of first wave guide bandpass filter is
345GHz, pass band width 8.6GHz, the centre frequency of second waveguide bandpass filter are 330GHz, pass band width 8GHz,
Insertion loss in passband is less than 1.5dB, and Out-of-band rejection is less than -25dB.According to the design method of coupling matrix, filtered by designing
Each layer rectangular cavities size of ripple device, relative position relation and hybrid-T knot or so minor matters length obtain meeting design objective will
Duplexer working frequency, insertion loss and Out-of-band rejection for asking etc..
For first wave guide bandpass filter, the centre frequency of its passband is 345GHz, by formula (1), wherein, fmnl=
345GHz, c=3 × 108M/s, μr=1, εr=1, m, n, l are respectively 1,1,0.It can be calculated, the long a=of hollow waveguide cavity
712um, wide b=549um, high d=400um.The pass band width of first wave guide bandpass filter is 8.6GHz, and relative bandwidth is
2.5%, by formula (2), wherein, g0=1, g1=0.6291, FBW=2.5%, therefore Q can be calculatede=25.164.The
The coefficient of coup of one waveguide bandpass filter is obtained by formula (3), wherein g1=0.6291, g2=0.9702, g3=0.6291,
FBW=2.5%, M is calculated1,2=M2,3=0.032.By simulation optimization, the size of first wave guide bandpass filter is obtained
For：
a11=a21=a31=712um, b11=b31=584um, b21=540um, dx21=450um, dy11=dy31=
230um.Wherein, a11And b11The respectively length and width of first wave guide bandpass filter first layer, a21And b21Respectively first wave guide
The length and width of the bandpass filter second layer, a31And b31The respectively length and width of first wave guide bandpass filter third layer, dx21For
The distance that first wave guide bandpass filter first layer staggers with the second layer along long side, dy11For first wave guide bandpass filter
One layer of distance to stagger with input port along broadside, dy31For first wave guide bandpass filter third layer and output port along
The distance that broadside staggers.
For second waveguide bandpass filter, the centre frequency of its passband is 330GHz, by formula (1), wherein fmnl=
330GHz, c=3 × 108M/s, μr=1, εr=1, m, n, l are respectively 1,1,0.It can be calculated, the long a=of hollow waveguide cavity
712um, wide b=590um, high d=400um.The pass band width of second waveguide bandpass filter is 8GHz, and relative bandwidth is
2.4%, by formula (2), wherein g0=1, g1=0.6291, FBW=2.4%, therefore Q can be calculatede=26.213.The
The coefficient of coup of one waveguide bandpass filter can be obtained by formula (3), wherein g1=0.6291, g2=0.9702, g3=
0.6291, FBW=2.4%, therefore M can be calculated1,2=M2,3=0.031.By simulation optimization, second waveguide band is obtained
The size of bandpass filter is：
a12=a22=a32=712um, b12=b32=624um, b22=578um, dx22=435um, dy12=dy32=
255um.Wherein, a12And b12The respectively length and width of second waveguide bandpass filter first layer, a22And b22Respectively second waveguide
The length and width of the bandpass filter second layer, a32And b32The respectively length and width of second waveguide bandpass filter third layer, dx22For
The distance that second waveguide bandpass filter first layer staggers with the second layer along long side, dy12For second waveguide bandpass filter
One layer of distance to stagger with input port along broadside, dy32For second waveguide bandpass filter third layer and output port along
The distance that broadside staggers.
The minor matters size of left and right two of hybrid-T knot is respectively：L1=600um, L2=588um.
In the present embodiment, terahertz waveguide duplexer is as follows using bulk silicon MEMS technique preparation flow：
Step 1, the simulation model for the waveguide duplexer for meeting technical requirement is designed.
Step 2, t=400um is chosen, t is the twin polishing soi wafer thickness of bulk silicon MEMS technique actual use, in step
With thickness t in the simulation model of rapid 1 waveguide duplexer, along the plane perpendicular to waveguide duplexer Electromagnetic Wave Propagation direction
On, continuous several times interception can on one layer of silicon chip dual surface lithography graphical window, obtaining multilayer has dual surface lithography graphical window
Domain, such as Fig. 5.In order to improve silicon chip after processing respectively stacking put when aligning accuracy, in the domain of individual layer waveguide duplexer
On have also been devised positioning slot structure.
Step 3, a twin polishing soi wafer is chosen, the domain obtained using step 2, is existed using bulk silicon MEMS technique
The two-sided formation feed waveguide of twin polishing soi wafer and the diplexer structure with rectangular cavities, and locating slot, obtain list
The silicon chip component of layer waveguide duplexer.As shown in Figure 6.
Step 4, multiple twin polishing soi wafers are chosen, are utilized respectively and identical technology mode in step 3, etching shape
Into feed waveguide and the diplexer structure with rectangular cavities, polylith single rectangular hollow waveguide cavity is obtained.As shown in Figure 6.
Step 5, using gold process is sputtered, the silicon groove side for the rectangular hollow waveguide cavity that step 3 and step 4 obtain is completed
And the metallization of bottom, prepare bonding.
Step 6, using Jin-golden thermocompression bonding technology, by two in the step 5 metallized rectangular cavities that are etched with
The silicon chip component of individual layer waveguide duplexer is bonded together, and the silicon chip component of other layer of waveguide duplexer is also by this method key
Close.Such as Fig. 6.
Step 7, using slot structure is positioned, if the silicon chip component of dried layer waveguide duplexer in step 6 is used into what is be mechanically fixed
Mode is assembled, and obtains waveguide duplexer processed finished products.As shown in Figure 6.
The design result of waveguide duplexer is obtained, includes the insertion loss of two branch roads, standing-wave ratio, isolation etc., respectively
It is plotted in Fig. 7-Figure 10.
It can be obtained by design result, two passband central frequencies of embodiment duplexer are respectively 330GHz (5-8 in the present invention
The working frequency of branch road) and 345GHz (working frequency of 3-8 branch roads).It is operated in 330GHz 5-8 branch roads：Insertion loss
1.5dB bandwidth of operation is 8GHz, and the standing-wave ratio of the second input port 5 is less than 2.2, and the standing-wave ratio of the 3rd output port 8 is less than
2.1,340GHz Out-of-band rejection is less than -28dB.It is operated in 345GHz 3-8 branch roads：Insertion loss 1.5dB bandwidth of operation is
8.6GHz, the standing-wave ratio of first input port 3 are less than 2.1, and the standing-wave ratio of port 8 is small less than 2.1,332GHz Out-of-band rejection
In -32dB.In addition, the isolation of the input port 5 of first input port 3 and second of the duplexer is less than -27dB.
It the foregoing is only presently preferred embodiments of the present invention, every impartial change made within the scope of the invention as claimed
Change and modify, the covering scope of the claims in the present invention all should be belonged to.
Claims (4)
1. the terahertz waveguide duplexer based on bulk silicon MEMS technique, it is characterised in that：Including first wave guide bandpass filter,
Two waveguide bandpass filters and hybrid-T knot；First wave guide bandpass filter, second waveguide bandpass filter respectively with T-wave
Lead knot to be connected, integrated hollow cavity structure of the composition with three ports；
First wave guide bandpass filter, second waveguide bandpass filter structures are identical, and size dimension is different；First wave guide band logical is filtered
Ripple device, second waveguide bandpass filter are operated in different frequency, and the high filter size of passband central frequency is less than bandpass center
The low wave filter of frequency, and the passband of first wave guide bandpass filter is not overlapping with the passband of second waveguide bandpass filter；
The cascade of multilayer rectangle hollow waveguide cavity is respectively adopted in first wave guide bandpass filter and second waveguide bandpass filter
Structure；Every layer of rectangular hollow waveguide cavity is hollow cuboid, and the hollow cuboid digs rectangle in two surfaces respectively up and down
Through hole, electromagnetism wave energy is inputted from the top of hollow cuboid, export from below, and filtering will not be leaked out from four sides
Device；Every layer of rectangular hollow waveguide cavity is formed on silicon chip, the hollow parts thickness all same of every layer of rectangular hollow waveguide cavity,
But size differs；Every layer of rectangular hollow waveguide cavity is in cascade, its lower surface and next layer of rectangular hollow waveguide cavity
Upper surface be connected, the through hole in two faces forms the rectangle coupling window of a connection, and the electromagnetic wave in hollow waveguide cavity leads to
Overcoupling window is transmitted in next layer, and input port of the electromagnetic wave along waveguide bandpass filter unidirectionally passes towards output port
Broadcast；
Locating slot knot is etched on the position not clashed with the physical arrangement of rectangular hollow waveguide cavity on every layer of silicon chip,
Structure；
The first input port of first wave guide bandpass filter and the first output port, and the of second waveguide bandpass filter
Two input ports and the second output port are standard-sized rectangular waveguide；
First wave guide bandpass filter and second waveguide bandpass filter optimize it using the design method based on coupling matrix
Appearance and size；
First output port of first wave guide bandpass filter and the second output port of second waveguide bandpass filter connect respectively
Connect the input port of two horizontal minor matters of hybrid-T knot；The size and first wave guide of two minor matters input ports of hybrid-T knot
Bandpass filter, the output port size of second waveguide bandpass filter are identical, input port and the seamless company of output port
Connect；Bit errors during in order to reduce connection, the position etching that can not contacted in actual processing on silicon chip with hybrid-T knot
Locating slot, position and the first wave guide bandpass filter and the positioning groove location of each layer of second waveguide bandpass filter of the locating slot
It is corresponding identical, by making positioning slot structure overlapping by the position alignment of input port and output port and overlapping；
The hybrid-T knot is a T-shaped hollow cavity structure, the structure cascaded using multilayer waveguide cavity；
The left and right ends minor matters length that hybrid-T bears water flat minor matters is different；Left minor matters are connected with first wave guide bandpass filter, right
Minor matters are connected with second waveguide bandpass filter, and left minor matters are different from the working frequency of right minor matters；Left and right branch is calculated by formula (5)
The length of section；
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Be main feeder perpendicular to the part of horizontal minor matters in hybrid-T knot, main feeder by the energy hybrid of left and right minor matters simultaneously
It is transmitted；3rd output port of main feeder and the input port of left and right minor matters are rectangular waveguide, and the size of port is equal
It is identical；
The terahertz waveguide duplexer inside cavity is air or vacuum；
The terahertz waveguide duplexer cavity inner wall sputtering gold processing.
2. the terahertz waveguide duplexer according to claim 1 based on bulk silicon MEMS technique, it is characterised in that：The base
It is to give the technical indicators such as centre frequency, relative bandwidth and the insertion loss of filter passband in the design method of coupling matrix
Afterwards, the coefficient of coup and external sort factor of bandpass filter are adjusted, so as to obtain first wave guide bandpass filter and the second ripple
The specific appearance and size of conduction band bandpass filter；Specific method is：
Step 1, consider influence of the bandpass filter centre frequency to every layer of hollow waveguide cavity size size, obtained by formula (1)
Go out the size of every layer of hollow waveguide cavity size；
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<mrow>
<mi>m</mi>
<mi>&pi;</mi>
</mrow>
<mi>a</mi>
</mfrac>
<mo>)</mo>
</mrow>
<mn>2</mn>
</msup>
<mo>+</mo>
<msup>
<mrow>
<mo>(</mo>
<mfrac>
<mrow>
<mi>n</mi>
<mi>&pi;</mi>
</mrow>
<mi>b</mi>
</mfrac>
<mo>)</mo>
</mrow>
<mn>2</mn>
</msup>
<mo>+</mo>
<msup>
<mrow>
<mo>(</mo>
<mfrac>
<mrow>
<mi>l</mi>
<mi>&pi;</mi>
</mrow>
<mi>d</mi>
</mfrac>
<mo>)</mo>
</mrow>
<mn>2</mn>
</msup>
</mrow>
</msqrt>
<mo>-</mo>
<mo>-</mo>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>1</mn>
<mo>)</mo>
</mrow>
</mrow>
Wherein, fmnlFor the centre frequency of bandpass filter, c is the light velocity in vacuum, μrFor relative permeability, εrFor Relative electro-conductivity
Rate, m, n, l represent the half period of length direction change of the field amplitude of electromagnetic wave in wave-guide cavity wave along hollow waveguide cavity
Number, a, b, d are respectively the size of the length and width and height, i.e. hollow waveguide cavity of hollow waveguide cavity；But in design process
In, due to being intercoupled between every layer of hollow waveguide cavity, the working frequency of simulation result can be caused to shift；In order to correct
The skew of working frequency, it is also necessary to which simulation optimization adjusts the length of every layer of hollow waveguide cavity and wide size；What is ultimately formed is every
The size of layer hollow waveguide cavity differs；
Step 2, the hollow waveguide cavity coupling window chi that the external sort factor of bandpass filter is connected with input port is considered
The relation of very little size, external sort factor is obtained by formula (2)；
Qe=g0g1/FBW (2)
Wherein, QeFor the external sort factor of bandpass filter, g0For the original paper value of 0 rank Chebyshev's low-pass prototype, g1For 1 rank
The original paper value of Chebyshev's low-pass prototype, FBW are the relative bandwidth of wave filter；According to the external sort factor being calculated, lead to
The mode of simulation optimization is crossed, often changes the size for once coupling window, the simulation result of an external sort factor is obtained, with public affairs
The result of calculation that formula (2) obtains compares, until it is consistent with result of calculation that coupling window is adjusted into simulation result；Finally, obtain
The hollow waveguide cavity coupling window size being connected with bandpass filter input port；Obtained by the method and first input end
The connected hollow waveguide cavity coupling window size of mouth and the hollow waveguide cavity coupling window being connected with the second input port are big
It is small；
Step 3, consider that the different bandpass filter coefficients of coup is big to the coupling window size between every layer of hollow waveguide cavity
Small influence, to wherein any one layer of hollow waveguide cavity, the coefficient of coup is obtained by formula (3)；
<mrow>
<msub>
<mi>M</mi>
<mrow>
<mi>i</mi>
<mo>,</mo>
<mi>i</mi>
<mo>+</mo>
<mn>1</mn>
</mrow>
</msub>
<mo>=</mo>
<mi>F</mi>
<mi>B</mi>
<mi>W</mi>
<mo>/</mo>
<msqrt>
<mrow>
<msub>
<mi>g</mi>
<mi>i</mi>
</msub>
<msub>
<mi>g</mi>
<mrow>
<mi>i</mi>
<mo>+</mo>
<mn>1</mn>
</mrow>
</msub>
</mrow>
</msqrt>
<mo>,</mo>
<mrow>
<mo>(</mo>
<mi>i</mi>
<mo>=</mo>
<mn>1</mn>
<mo>,</mo>
<mn>2</mn>
<mo>)</mo>
</mrow>
<mo>-</mo>
<mo>-</mo>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>3</mn>
<mo>)</mo>
</mrow>
</mrow>
Wherein, Mi,i+1For the bandpass filter coefficient of coup, giFor the original paper value of i rank Chebyshev's low-pass prototypes, gi+1For i+1 ranks
The original paper value of Chebyshev's low-pass prototype；By way of simulation optimization, often change the size for once coupling window, obtain one
Insertion loss simulation result in operating frequency range, according to formula (4),
<mrow>
<mi>M</mi>
<mo>=</mo>
<mfrac>
<mrow>
<msup>
<msub>
<mi>f</mi>
<mi>h</mi>
</msub>
<mn>2</mn>
</msup>
<mo>-</mo>
<msup>
<msub>
<mi>f</mi>
<mi>l</mi>
</msub>
<mn>2</mn>
</msup>
</mrow>
<mrow>
<msup>
<msub>
<mi>f</mi>
<mi>h</mi>
</msub>
<mn>2</mn>
</msup>
<mo>+</mo>
<msup>
<msub>
<mi>f</mi>
<mi>l</mi>
</msub>
<mn>2</mn>
</msup>
</mrow>
</mfrac>
<mo>-</mo>
<mo>-</mo>
<mo>-</mo>
<mrow>
<mo>(</mo>
<mn>4</mn>
<mo>)</mo>
</mrow>
</mrow>
Wherein, M is the coefficient of coup obtained by simulation result, fhIt is that the peak that frequency is higher in insertion loss simulation result is corresponding
Frequency, flIt is frequency corresponding to frequency is relatively low in insertion loss simulation result peak；The coefficient of coup result that will be calculated
It is compared with emulating obtained coefficient of coup result, the size of adjustment coupling window, until result of calculation and simulation result one
Cause, so as to obtain the coupling window size between this layer of hollow waveguide cavity；According to the method for step 3, all adjacent two are obtained
Coupling window size between layer hollow waveguide cavity；
By step 1- steps 3, the specific appearance and size of first wave guide bandpass filter and second waveguide bandpass filter is obtained.
3. the terahertz waveguide duplexer according to claim 1 based on bulk silicon MEMS technique, it is characterised in that：Described
One input port and the second input port are connected with the Terahertz antenna of similar frequency bands respectively, and antenna receives the terahertz of different frequency
Hereby ripple, the THz wave of two different frequencies enter terahertz waveguide by first input port and the second input port respectively
Inside duplexer；Passed to from the hybrid circuit structure that two input ports are entered inside duplexer by the 3rd output port next
In level circuit.
4. the preparation method of the terahertz waveguide duplexer based on bulk silicon MEMS technique, it is characterised in that：Using bulk silicon MEMS work
Prepared by skill, comprise the following steps that：
Step 1, using electromagnetic simulation software, according to above-mentioned terahertz waveguide diplexer structure, establish and meet given technical indicator
It is required that waveguide duplexer simulation model, including first wave guide bandpass filter, second waveguide bandpass filter and hybrid-T
Knot；
Step 2, it is the thickness that bulk silicon MEMS technique often uses silicon chip to choose thickness value t, t.It is double in the terahertz waveguide that step 1 obtains
With thickness t in the simulation model of work device, along in the plane perpendicular to terahertz waveguide duplexer Electromagnetic Wave Propagation direction, continuously
Repeatedly interception can on one layer of silicon chip dual surface lithography graphical window, obtaining multilayer has the domain of dual surface lithography graphical window；
Positioning slot structure is devised on domain, positioning slot structure is not in contact with the figure of waveguide duplexer；Stacking hollow waveguide
During cavity, the locating slot of every layer of hollow waveguide cavity is directed to ensure aligning accuracy；
Step 3, one twin polishing soi wafer of selection, the domain with dual surface lithography graphical window obtained using step 2,
Using bulk silicon MEMS technique in the two-sided formation feed waveguide of twin polishing soi wafer and duplexer knot with rectangular cavities
Structure, and locating slot, so as to obtain single rectangular hollow waveguide cavity；
Step 4, multiple twin polishing soi wafers are chosen, is utilized respectively and forms feedback with identical technology mode in step 3, etching
Electric waveguide and the diplexer structure with rectangular cavities, obtain polylith single rectangular hollow waveguide cavity；
Step 5, using sputtering gold process, the silicon groove side for the polylith single rectangular hollow waveguide cavity that step 3 and step 4 are obtained
Face and bottom metalization；
Step 6, using Jin-golden thermocompression bonding technology, by the individual layer waveguide for being etched with rectangular cavities metallized in step 5
The silicon chip component of duplexer is bonded together two-by-two；
Step 7, using slot structure is positioned, if the silicon chip component of dried layer waveguide duplexer in step 6 to be used to the mode being mechanically fixed
Assembled, obtain waveguide duplexer processed finished products.
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| CN110518320A (en) * | 2019-07-08 | 2019-11-29 | 南京航空航天大学 | The box-like Terahertz coat of metal hollow rectangular waveguide manufacturing method of group |
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| CN114725643B (en) * | 2022-06-10 | 2022-09-02 | 四川太赫兹通信有限公司 | Terahertz dual-mode folding multiplexer |
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