CN107611237A - 发光二极管芯片的制造方法和发光二极管芯片 - Google Patents

发光二极管芯片的制造方法和发光二极管芯片 Download PDF

Info

Publication number: CN107611237A
Authority: CN; China
Prior art keywords: chip; light; emitting diode; transparency carrier; backlight unit
Prior art date: 2016-07-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CN201710541151.1A

Other languages

English (en)

Chinese (zh)

Inventor

冈村卓

北村宏

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Disco Corp

Original Assignee

Disco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-07-11

Filing date

2017-07-05

Publication date

2018-01-19

2017-07-05 Application filed by Disco Corp filed Critical Disco Corp

2018-01-19 Publication of CN107611237A publication Critical patent/CN107611237A/zh

Status Pending legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 38
238000004519 manufacturing process Methods 0.000 title claims abstract description 27
230000011218 segmentation Effects 0.000 claims abstract description 24
239000004065 semiconductor Substances 0.000 claims abstract description 8
239000013078 crystal Substances 0.000 claims abstract description 6
229910052594 sapphire Inorganic materials 0.000 claims description 11
239000010980 sapphire Substances 0.000 claims description 11
239000005304 optical glass Substances 0.000 claims description 4
239000011347 resin Substances 0.000 claims description 4
229920005989 resin Polymers 0.000 claims description 4
239000011222 crystalline ceramic Substances 0.000 claims description 3
229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
230000010354 integration Effects 0.000 claims description 3
239000000463 material Substances 0.000 claims description 3
239000000853 adhesive Substances 0.000 claims description 2
230000001070 adhesive effect Effects 0.000 claims description 2
230000005611 electricity Effects 0.000 claims 1
238000005530 etching Methods 0.000 claims 1
238000005488 sandblasting Methods 0.000 claims 1
239000000758 substrate Substances 0.000 description 20
230000003287 optical effect Effects 0.000 description 10
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
229910002601 GaN Inorganic materials 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
238000002679 ablation Methods 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000001816 cooling Methods 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000009738 saturating Methods 0.000 description 2
239000007787 solid Substances 0.000 description 2
239000000126 substance Substances 0.000 description 2
239000004425 Makrolon Substances 0.000 description 1
239000006061 abrasive grain Substances 0.000 description 1
239000007767 bonding agent Substances 0.000 description 1
239000002173 cutting fluid Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000005323 electroforming Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000003292 glue Substances 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
230000035699 permeability Effects 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
229920000515 polycarbonate Polymers 0.000 description 1
QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)

CN201710541151.1A 2016-07-11 2017-07-05 发光二极管芯片的制造方法和发光二极管芯片 Pending CN107611237A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2016-137016		2016-07-11
JP2016137016A JP2018010898A (ja)	2016-07-11	2016-07-11	発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (1)

Publication Number	Publication Date
CN107611237A true CN107611237A (zh)	2018-01-19

Family

ID=60995724

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201710541151.1A Pending CN107611237A (zh)	2016-07-11	2017-07-05	发光二极管芯片的制造方法和发光二极管芯片

Country Status (4)

Country	Link
JP (1)	JP2018010898A (ja)
KR (1)	KR20180006848A (ja)
CN (1)	CN107611237A (ja)
TW (1)	TW201813127A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN108445694A (zh) *	2018-03-19	2018-08-24	京东方科技集团股份有限公司	一种led芯片以及制作方法、具有补光拍照功能的装置

Citations (4)

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CN102623615A (zh) *	2012-03-30	2012-08-01	东南大学	可自对准的发光二极管的圆片级封装方法
CN103855268A (zh) *	2012-11-30	2014-06-11	展晶科技(深圳)有限公司	发光二极管发光装置制作方法
JP2014517544A (ja) *	2011-06-15	2014-07-17	センサーエレクトロニックテクノロジーインコーポレイテッド	大型の逆さ光取り出し構造付の装置
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

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JP4305102B2 (ja) *	2003-09-03	2009-07-29	豊田合成株式会社	半導体発光素子用複合基板及びその製造方法、並びに半導体発光素子の製造方法
TW200807760A (en) *	2006-05-23	2008-02-01	Alps Electric Co Ltd	Method for manufacturing semiconductor light emitting element
JP5198142B2 (ja) *	2008-05-14	2013-05-15	シャープ株式会社	電子素子モジュールの製造方法
JP5379434B2 (ja) *	2008-09-22	2013-12-25	学校法人名城大学	発光素子用サファイア基板の製造方法
JP2011009305A (ja) *	2009-06-23	2011-01-13	Koito Mfg Co Ltd	発光モジュール
JP2012038889A (ja) *	2010-08-06	2012-02-23	Koito Mfg Co Ltd	蛍光部材および発光モジュール
CN102157654B (zh) *	2011-03-30	2013-09-25	重庆大学	基于双面凹孔衬底及组分渐变缓冲层的倒装led芯片
JP5953198B2 (ja) *	2011-09-28	2016-07-20	株式会社リプス・ワークス	極短パルスレーザによる多次元パターン形成装置及び形成方法
CN104160520A (zh) *	2012-02-01	2014-11-19	松下电器产业株式会社	半导体发光元件、其制造方法和光源装置
KR102345751B1 (ko) *	2015-01-05	2022-01-03	삼성전자주식회사	반도체 발광소자 패키지 및 그 제조 방법

2016
- 2016-07-11 JP JP2016137016A patent/JP2018010898A/ja active Pending
2017
- 2017-06-02 TW TW106118230A patent/TW201813127A/zh unknown
- 2017-06-30 KR KR1020170083296A patent/KR20180006848A/ko not_active Application Discontinuation
- 2017-07-05 CN CN201710541151.1A patent/CN107611237A/zh active Pending

Patent Citations (4)

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JP2014517544A (ja) *	2011-06-15	2014-07-17	センサーエレクトロニックテクノロジーインコーポレイテッド	大型の逆さ光取り出し構造付の装置
CN102623615A (zh) *	2012-03-30	2012-08-01	东南大学	可自对准的发光二极管的圆片级封装方法
CN103855268A (zh) *	2012-11-30	2014-06-11	展晶科技(深圳)有限公司	发光二极管发光装置制作方法
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN108445694A (zh) *	2018-03-19	2018-08-24	京东方科技集团股份有限公司	一种led芯片以及制作方法、具有补光拍照功能的装置
CN108445694B (zh) *	2018-03-19	2019-09-03	京东方科技集团股份有限公司	一种led芯片以及制作方法、具有补光拍照功能的装置
WO2019179086A1 (zh) *	2018-03-19	2019-09-26	京东方科技集团股份有限公司	发光二极管芯片、其制作方法、背光模组及显示装置
US11522110B2 (en)	2018-03-19	2022-12-06	Beijing Boe Optoelectronics Technology Co., Ltd.	Light-emitting diode chip, method for fabricating the same, backlight module, and display device

Also Published As

Publication number	Publication date
JP2018010898A (ja)	2018-01-18
KR20180006848A (ko)	2018-01-19
TW201813127A (zh)	2018-04-01

Legal Events

Date	Code	Title	Description
2018-01-19	PB01	Publication
2018-01-19	PB01	Publication
2019-07-05	SE01	Entry into force of request for substantive examination
2019-07-05	SE01	Entry into force of request for substantive examination
2021-10-29	WD01	Invention patent application deemed withdrawn after publication	Application publication date: 20180119
2021-10-29	WD01	Invention patent application deemed withdrawn after publication

Publication	Publication Date	Title
CN107919432A (zh)	2018-04-17	发光二极管芯片的制造方法和发光二极管芯片
CN107611237A (zh)	2018-01-19	发光二极管芯片的制造方法和发光二极管芯片
CN107768486A (zh)	2018-03-06	发光二极管芯片的制造方法和发光二极管芯片
CN107706292A (zh)	2018-02-16	发光二极管芯片的制造方法和发光二极管芯片
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CN108400226A (zh)	2018-08-14	发光二极管芯片的制造方法和发光二极管芯片
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