CN107611237A - 发光二极管芯片的制造方法和发光二极管芯片 - Google Patents
发光二极管芯片的制造方法和发光二极管芯片 Download PDFInfo
- Publication number
- CN107611237A CN107611237A CN201710541151.1A CN201710541151A CN107611237A CN 107611237 A CN107611237 A CN 107611237A CN 201710541151 A CN201710541151 A CN 201710541151A CN 107611237 A CN107611237 A CN 107611237A
- Authority
- CN
- China
- Prior art keywords
- chip
- light
- emitting diode
- transparency carrier
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000011218 segmentation Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000005488 sandblasting Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-137016 | 2016-07-11 | ||
JP2016137016A JP2018010898A (ja) | 2016-07-11 | 2016-07-11 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107611237A true CN107611237A (zh) | 2018-01-19 |
Family
ID=60995724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710541151.1A Pending CN107611237A (zh) | 2016-07-11 | 2017-07-05 | 发光二极管芯片的制造方法和发光二极管芯片 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2018010898A (ja) |
KR (1) | KR20180006848A (ja) |
CN (1) | CN107611237A (ja) |
TW (1) | TW201813127A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108445694A (zh) * | 2018-03-19 | 2018-08-24 | 京东方科技集团股份有限公司 | 一种led芯片以及制作方法、具有补光拍照功能的装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623615A (zh) * | 2012-03-30 | 2012-08-01 | 东南大学 | 可自对准的发光二极管的圆片级封装方法 |
CN103855268A (zh) * | 2012-11-30 | 2014-06-11 | 展晶科技(深圳)有限公司 | 发光二极管发光装置制作方法 |
JP2014517544A (ja) * | 2011-06-15 | 2014-07-17 | センサー エレクトロニック テクノロジー インコーポレイテッド | 大型の逆さ光取り出し構造付の装置 |
JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4305102B2 (ja) * | 2003-09-03 | 2009-07-29 | 豊田合成株式会社 | 半導体発光素子用複合基板及びその製造方法、並びに半導体発光素子の製造方法 |
TW200807760A (en) * | 2006-05-23 | 2008-02-01 | Alps Electric Co Ltd | Method for manufacturing semiconductor light emitting element |
JP5198142B2 (ja) * | 2008-05-14 | 2013-05-15 | シャープ株式会社 | 電子素子モジュールの製造方法 |
JP5379434B2 (ja) * | 2008-09-22 | 2013-12-25 | 学校法人 名城大学 | 発光素子用サファイア基板の製造方法 |
JP2011009305A (ja) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | 発光モジュール |
JP2012038889A (ja) * | 2010-08-06 | 2012-02-23 | Koito Mfg Co Ltd | 蛍光部材および発光モジュール |
CN102157654B (zh) * | 2011-03-30 | 2013-09-25 | 重庆大学 | 基于双面凹孔衬底及组分渐变缓冲层的倒装led芯片 |
JP5953198B2 (ja) * | 2011-09-28 | 2016-07-20 | 株式会社リプス・ワークス | 極短パルスレーザによる多次元パターン形成装置及び形成方法 |
CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
KR102345751B1 (ko) * | 2015-01-05 | 2022-01-03 | 삼성전자주식회사 | 반도체 발광소자 패키지 및 그 제조 방법 |
-
2016
- 2016-07-11 JP JP2016137016A patent/JP2018010898A/ja active Pending
-
2017
- 2017-06-02 TW TW106118230A patent/TW201813127A/zh unknown
- 2017-06-30 KR KR1020170083296A patent/KR20180006848A/ko not_active Application Discontinuation
- 2017-07-05 CN CN201710541151.1A patent/CN107611237A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014517544A (ja) * | 2011-06-15 | 2014-07-17 | センサー エレクトロニック テクノロジー インコーポレイテッド | 大型の逆さ光取り出し構造付の装置 |
CN102623615A (zh) * | 2012-03-30 | 2012-08-01 | 东南大学 | 可自对准的发光二极管的圆片级封装方法 |
CN103855268A (zh) * | 2012-11-30 | 2014-06-11 | 展晶科技(深圳)有限公司 | 发光二极管发光装置制作方法 |
JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108445694A (zh) * | 2018-03-19 | 2018-08-24 | 京东方科技集团股份有限公司 | 一种led芯片以及制作方法、具有补光拍照功能的装置 |
CN108445694B (zh) * | 2018-03-19 | 2019-09-03 | 京东方科技集团股份有限公司 | 一种led芯片以及制作方法、具有补光拍照功能的装置 |
WO2019179086A1 (zh) * | 2018-03-19 | 2019-09-26 | 京东方科技集团股份有限公司 | 发光二极管芯片、其制作方法、背光模组及显示装置 |
US11522110B2 (en) | 2018-03-19 | 2022-12-06 | Beijing Boe Optoelectronics Technology Co., Ltd. | Light-emitting diode chip, method for fabricating the same, backlight module, and display device |
Also Published As
Publication number | Publication date |
---|---|
JP2018010898A (ja) | 2018-01-18 |
KR20180006848A (ko) | 2018-01-19 |
TW201813127A (zh) | 2018-04-01 |
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