CN107611189A - Thin film solar cell sheet and preparation method thereof - Google Patents
Thin film solar cell sheet and preparation method thereof Download PDFInfo
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- CN107611189A CN107611189A CN201710806075.2A CN201710806075A CN107611189A CN 107611189 A CN107611189 A CN 107611189A CN 201710806075 A CN201710806075 A CN 201710806075A CN 107611189 A CN107611189 A CN 107611189A
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- solar cell
- thin film
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- cell sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of preparation method of thin film solar cell sheet, comprise the following steps：With red laser scoring on ITO electro-conductive glass electricity pieces, sub- battery is manufactured；PIN battery film layers are prepared on ITO electro-conductive glass electricity pieces after groove；The chemical vapor deposition graphene film layer in PIN battery film layers；Second of groove is carried out in graphene film layer；Aluminium, cupro-nickel film are sequentially depositing in graphene film layer after groove；Then EVA diaphragms are covered in cupro-nickel film layer；Using laser marking, the EVA diaphragms in mark region are removed, and add tin to draw both positive and negative polarity solder joint in mark region, cleaved and test, are produced.Currently used ZnO layer is replaced using graphene in thin film solar cell sheet prepared by the present invention, there is the advantages of light transmittance and high reflectivity, and safety non-pollution.And bring up to 8~9% compared to current noncrystal membrane solar battery sheet, conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically, is related to a kind of thin film solar cell sheet and its system
Preparation Method.
Background technology
Because the energy crisis occurred in recent years and the people are to the pay attention to day by day of environmental protection, various countries implement, promoted one after another
Wind energy, solar energy, water can etc. green energy resource, wherein the solar energy energy inexhaustible, nexhaustible as the mankind and enjoy pass
Note, some countries implement government and subsidy to solar power generation, so as to promote the large-scale development of solar energy generation technology and answer
With.Amorphous silicon thin-film solar cell is because its cost is low, energy return period is short, large area automated production, high temperatures good etc. excellent
Point, got more and more people's extensive concerning in application of solar energy field.
However, due to amorphous silicon thin-film solar cell piece relative to crystal silicon solar batteries piece have conversion efficiency it is low,
The shortcomings that attenuation degree is high, hinder its large-scale promotion application.Therefore, high conversion efficiency is produced, attenuation degree is low, price is low
Honest and clean novel amorphous silicon thin film cell piece is current study hotspot.
A kind of amorphous silicon thin-film solar cell, including substrate, preceding electrode are disclosed in patent document CN104600148A
Figure, PIN photoelectric conversion layers, back electrode, the preceding electrode of PIN photoelectric conversion layers comprise at least ITO, ZnO, graphene electrically conducting transparent
One kind in film.The problems such as transmissivity is low, reflectivity is high be present in amorphous silicon thin-film solar cell made from this method.
The content of the invention
For current noncrystal membrane cell piece conversion efficiency it is low the shortcomings that, the present invention provides a kind of novel thin film solar energy
Cell piece and preparation method thereof.Solar battery efficiency is influenceed by factors such as material, device architecture, techniques, particularly material and
Technique.The present invention is by replacing zinc oxide, and optimized production process from this new material of graphene, improving non-crystalline silicon
Thin-film solar cells efficiency is to 8~9%.
The purpose of the present invention is achieved through the following technical solutions：
The invention provides a kind of preparation method of thin film solar cell sheet, comprise the following steps：
A, sub- battery is manufactured with red laser scoring on ITO electro-conductive glass electricity pieces；
B, PIN battery film layers are prepared on the ITO electro-conductive glass electricity pieces after groove；
C, the chemical vapor deposition graphene film layer in PIN battery film layers；
D, second of groove is carried out in graphene film layer；
E, aluminium, cupro-nickel film are sequentially depositing in the graphene film layer after groove；
F, and then in cupro-nickel film layer EVA diaphragms are covered；
G, using laser marking, the EVA diaphragms in mark region are removed, and add tin to draw both positive and negative polarity weldering in mark region
Point, cleaved and test, produces the thin film solar cell sheet.
Preferably, in step A, the red laser scoring specifically uses following steps：ITO electro-conductive glass electricity piece is cleaned
Afterwards, electro-conductive glass electricity a moment is divided into sub- battery independent mutually with 65~120nm of wavelength laser.
Preferably, the line thickness between each sub- battery is 95-110um, the linear velocity 500-700mm/s of delineation.
Preferably, in step B, the PIN batteries film layer is prepared by PE-CVD methods, is comprised the following steps that：
Load preheats：Baker will be pushed into after the electro-conductive glass electricity piece delineated after processing of step A and deposition clamp assembling
In, 180-185 DEG C preheats 3 hours；
Prepare P layers：Use B (CH3)3、SiH4、CH4, Ar gases, 190~195 DEG C of depositing temperature, power density 0.4~
1mW/cm2, silane is 10 with methane flow ratio：1.4~1.55, deposition pressure 0.9torr, discharge time 750s；
Prepare I layers：Use SiH4, Ar gases, 190~195 DEG C of depositing temperature, power density 0.4mw/cm2, deposition pressure
For 0.9torr, discharge time 1000s；
Prepare N layers：Use PH3、SiH4, Ar gases, 190~195 DEG C of depositing temperature, 0.4~1W/cm of power density2, sink
Overstock power 0.9torr, discharge time 400s.
Preferably, in step C, the chemical vapor deposition graphene film layer comprises the following steps that：
S1, PIN films are risen to 800-980 DEG C in 40-55min, be passed through the hydrogen of 900SCCm flows afterwards, keep setting
Standby interior pressure is 0.1-90Torr 15 minutes；
S2, it is passed through hydrogen and methane, the ratio of hydrogen and methane is 1：1-1：10, it is continually fed into ventilation 50-70 minutes, hydrogen
Gas and methane gas hydrogen reduction reaction at high temperature；
After S3, hydrogen reduction reaction terminate, it is 0.1-90Torr to keep the pressure in equipment, and the temperature of PIN films is in 200-
450-500 DEG C is cooled in 380min, and is passed through hydrogen and helium, the flow-rate ratio of hydrogen and helium is 1:1-I:10, in 40-
After 100min, stopping is passed through hydrogen, continues to be passed through the helium that flow is 100-650sccm.It is in order that deposition to be passed through hydrogen
Methane gas reaction in tower is complete, treats that stopping is passed through hydrogen, continues to be passed through helium, graphene film is in an inert environment
Under the conditions of formed.
Preferably, in step E, using PVD deposition aluminium, cupro-nickel film, and background vacuum is less than 2.5 × 10 during deposition-7Pa,
Sputter vacuum and be less than 2 × 10-4Pa。
Preferably, in step E, the thickness of aluminium film and the cupro-nickel film is 100-500nm, and surfacing is fine and close.It is described
Aluminium film and the performance of cupro-nickel film need to meet：400 DEG C of flatirons slidably reciprocate 20mm 5 times, and film layer is not damaged；Solder joint bears pulling force 45N
More than.
After step E processing, the sub- battery sheet resistance resistance being made up of electro-conductive glass, graphene, aluminium, cupro-nickel film is less than 0.5
Ω。
Present invention also offers a kind of thin film solar cell sheet prepared according to preceding method, includes ITO electro-conductive glass electricity
Piece, and set gradually on ITO electro-conductive glass electricity pieces PIN batteries film layer, graphene film layer, aluminum membranous layer, cupro-nickel film layer and
EVA diaphragms.
Preferably, some sub- batteries being uniformly arranged are included on the ITO electro-conductive glass electricity piece.
Present invention also offers a kind of thin film solar cell sheet of preceding method preparation in solar cell is prepared
Using.
Compared with prior art, the present invention has following beneficial effect：
1st, currently used ZnO layer is replaced using graphene in novel thin film solar battery sheet of the present invention, there is printing opacity
The advantages of rate and high reflectivity, and safety non-pollution.
2nd, novel thin film solar battery sheet of the present invention is compared to current noncrystal membrane solar battery sheet, conversion efficiency
Bring up to 8~9%.
Embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the technology of this area
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection domain.
Embodiment 1
A kind of thin film solar cell sheet and preparation method thereof is present embodiments provided, the film solar cell piece includes
ITO electro-conductive glass electricity pieces, and PIN batteries film layer, graphene film layer, the aluminium film set gradually on ITO electro-conductive glass electricity pieces
Layer, cupro-nickel film layer and EVA diaphragms；Include some sub- batteries being uniformly arranged on ITO electro-conductive glass electricity pieces.
Prepared by methods described comprises the following steps：
A, sub- battery is manufactured with red laser scoring on ITO electro-conductive glass electricity pieces；
B, PIN battery film layers are prepared on the ITO electro-conductive glass electricity pieces after groove；
C, the chemical vapor deposition graphene film layer in PIN battery film layers；
D, second of groove is carried out in graphene film layer；
E, aluminium, cupro-nickel film are sequentially depositing in the graphene film layer after groove；
F, and then in cupro-nickel film layer EVA diaphragms are covered；
G, using laser marking, the EVA diaphragms in mark region are removed, and add tin to draw both positive and negative polarity weldering in mark region
Point, cleaved and test, produces the thin film solar cell sheet.
The red laser scoring：Electro-conductive glass is delineated into mutual with wavelength 65-120nm laser after the cleaning of electro-conductive glass electricity piece
Phase independent sector, line thickness 95-110um, linear velocity 500-700mm/s, and cleaned；
The individual layer PIN that the PIN battery layers are prepared by PE-CVD methods, preparation method are specific as follows：
Load preheats：It will be pushed into after the electro-conductive glass piece delineated and deposition clamp assembling in baker, 180-185 DEG C of preheating
3 hours.
Prepare P layers：Use B (CH3)3、SiH4、CH4, Ar gases, 190~195 DEG C of depositing temperature, power density 0.4~
1mW/cm2, silane is 10 with methane flow ratio：1.4~1.55, deposition pressure 0.9torr, discharge time 750s；
Prepare I layers：Use SiH4, Ar gases, 190~195 DEG C of depositing temperature, power density 0.4mw/cm2, deposition pressure
For 0.9torr, discharge time 1000s；
Prepare N layers：Use PH3、SiH4, Ar gases, 190~195 DEG C of depositing temperature, 0.4~1W/cm of power density2, sink
Overstock power 0.9torr, discharge time 400s.
The chemical vapor deposition graphene film layer comprises the following steps that：
S1, PIN films are risen to 800-980 DEG C in 40-55min, be passed through the hydrogen of 900SCCm flows afterwards, keep setting
Standby interior pressure is 0.1-90Torr 15 minutes；
S2, it is passed through hydrogen and methane, the ratio of hydrogen and methane is 1：1-1：10, it is continually fed into ventilation 50-70 minutes, hydrogen
Gas and methane gas hydrogen reduction reaction at high temperature；
After S3, hydrogen reduction reaction terminate, it is 0.1-90Torr to keep the pressure in equipment, and the temperature of PIN films is in 200-
450-500 DEG C is cooled in 380min, and is passed through hydrogen and helium, the flow-rate ratio of hydrogen and helium is 1:1-I:10, in 40-
After 100min, stopping is passed through hydrogen, and the flow for continuing to be passed through helium is 100-650sccm；It is in order that deposition to be passed through hydrogen
Methane gas reaction in tower is complete, treats that stopping is passed through hydrogen, continues to be passed through helium, graphene film is in an inert environment
Under the conditions of formed.
In step E, during the PVD deposition, background vacuum is less than 2.5 × 10-7Pa, sputtering vacuum are less than 2 × 10-4。
Coating performance in step E meets：400 DEG C of flatirons slidably reciprocate 20mm5 times, and film layer is not damaged；Solder joint bears to draw
More than power 45N.
The baby battery sheet resistance resistance completed in step E is less than 0.5 Ω.
Cut in step G：Multitool cutting is carried out by specifications parameter size ± 100 μm of battery, is split after cutting
Piece；
Detected in step G：According to battery size and customer requirement, divide at intensity of illumination 260Lux ± 10,25 DEG C of temperature
The other zero load to product is detected with the electric current of cell piece, voltage under load condition, dispensed, and is finally packed.
The thin film solar cell sheet prepared using the above method, includes ITO electro-conductive glass electricity pieces, and in ITO conduction glass
PIN batteries film layer, graphene film layer, aluminum membranous layer, cupro-nickel film layer and the EVA diaphragms set gradually on glass electricity piece；The ITO is led
Include some sub- batteries being uniformly arranged on electric vitreous electricity piece.
The light transmittance of solar battery sheet made from the present embodiment is 40%, reflectivity 2%, transformation efficiency 8-9%.
Comparative example 1
This comparative example provides a kind of thin film solar cell sheet and preparation method thereof, and the film solar cell piece includes
ITO electro-conductive glass electricity pieces, and set gradually on ITO electro-conductive glass electricity pieces PIN batteries film layer, ZnO film layer, aluminum membranous layer,
Cupro-nickel film layer and EVA diaphragms；Include some sub- batteries being uniformly arranged on ITO electro-conductive glass electricity pieces.The preparation method with
Embodiment 1 is essentially identical, the difference is that only：Step C is the chemical vapor deposition ZnO film layer in PIN battery film layers.
The light transmittance of solar battery sheet made from this comparative example is 30%, reflectivity 40%, transformation efficiency 6%.
Concrete application approach of the present invention is a lot, and described above is only the preferred embodiment of the present invention.More than it should be pointed out that
Embodiment is merely to illustrate the present invention, and the protection domain being not intended to limit the invention.For the common skill of the art
For art personnel, under the premise without departing from the principles of the invention, some improvement can also be made, these improvement also should be regarded as this hair
Bright protection domain.
Claims (9)
1. a kind of preparation method of thin film solar cell sheet, it is characterised in that comprise the following steps：
A, sub- battery is manufactured with red laser scoring on ITO electro-conductive glass electricity pieces；
B, PIN battery film layers are prepared on the ITO electro-conductive glass electricity pieces after groove；
C, the chemical vapor deposition graphene film layer in PIN battery film layers；
D, second of groove is carried out in graphene film layer；
E, aluminium, cupro-nickel film are sequentially depositing in the graphene film layer after groove；
F, and then in cupro-nickel film layer EVA diaphragms are covered；
G, using laser marking, the EVA diaphragms in mark region are removed, and add tin to draw both positive and negative polarity solder joint, warp in mark region
Cutting and test, produce the thin film solar cell sheet.
2. the preparation method of thin film solar cell sheet according to claim 1, it is characterised in that described red in step A
Laser scoring specifically uses following steps：After ITO electro-conductive glass electricity piece is cleaned, with 65~120nm of wavelength laser by conduction
Vitreous electricity a moment is divided into sub- battery independent mutually.
3. the preparation method of thin film solar cell sheet according to claim 1 or 2, it is characterised in that each son electricity
Line thickness between pond is 95-110um, the linear velocity 500-700mm/s of delineation.
4. the preparation method of thin film solar cell sheet according to claim 1, it is characterised in that described in step B
PIN batteries film layer is prepared by PE-CVD methods, is comprised the following steps that：
Load preheats：It will be pushed into after the electro-conductive glass electricity piece delineated after processing of step A and deposition clamp assembling in baker,
180-185 DEG C preheats 3 hours；
Prepare P layers：Use B (CH3)3、SiH4、CH4, Ar gases, 190~195 DEG C of depositing temperature, 0.4~1mW/ of power density
cm2, silane is 10 with methane flow ratio：1.4~1.55, deposition pressure 0.9torr, discharge time 750s；
Prepare I layers：Use SiH4, Ar gases, 190~195 DEG C of depositing temperature, power density 0.4mw/cm2, deposition pressure is
0.9torr, discharge time 1000s；
Prepare N layers：Use PH3、SiH4, Ar gases, 190~195 DEG C of depositing temperature, 0.4~1W/cm of power density2, deposition pressure
Power 0.9torr, discharge time 400s.
5. the preparation method of thin film solar cell sheet according to claim 1, it is characterised in that in step C, describedization
Learn comprising the following steps that for vapor phase method deposited graphite alkene film layer：
S1, PIN films are risen to 800-980 DEG C in 40-55min, be passed through the hydrogen of 900SCCm flows afterwards, kept in equipment
Pressure be 0.1-90Torr 15 minutes；
S2, it is passed through hydrogen and methane, the ratio of hydrogen and methane is 1：1-1：10, be continually fed into ventilation 50-70 minutes, hydrogen and
Methane gas hydrogen reduction reaction at high temperature；
After S3, hydrogen reduction reaction terminate, it is 0.1-90Torr to keep the pressure in equipment, and the temperature of PIN films is in 200-380min
450-500 DEG C is inside cooled to, and is passed through hydrogen and helium, the flow-rate ratio of hydrogen and helium is 1:1-I:10, in 40-100min
Afterwards, stop being passed through hydrogen, continue to be passed through the helium that flow is 100-650sccm.
6. the preparation method of thin film solar cell sheet according to claim 1, it is characterised in that in step E, use
PVD deposition aluminium, cupro-nickel film, and background vacuum is less than 2.5 × 10 during deposition-7Pa, sputtering vacuum are less than 2 × 10-4Pa。
7. thin film solar cell sheet prepared by a kind of method according to claim 1, it is characterised in that conductive including ITO
Vitreous electricity piece, and PIN batteries film layer, graphene film layer, aluminum membranous layer, the cupro-nickel set gradually on ITO electro-conductive glass electricity pieces
Film layer and EVA diaphragms.
8. thin film solar cell sheet according to claim 8, it is characterised in that wrapped on the ITO electro-conductive glass electricity piece
Include some sub- batteries being uniformly arranged.
A kind of 9. thin film solar cell sheet prepared by method according to claim 1 answering in solar cell is prepared
With.
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| CN201710806075.2A CN107611189A (en) | 2017-09-08 | 2017-09-08 | Thin film solar cell sheet and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710806075.2A CN107611189A (en) | 2017-09-08 | 2017-09-08 | Thin film solar cell sheet and preparation method thereof |
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ID=61063299
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| CN102522437A (en) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | CIGS solar cell device and manufacturing method thereof |
| CN102656702A (en) * | 2009-08-07 | 2012-09-05 | 格尔德殿工业公司 | Electronic device including graphene-based layer(s), and/or method of making the same |
| CN102891074A (en) * | 2012-10-22 | 2013-01-23 | 西安电子科技大学 | SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method and manufactured device |
| CN102982861A (en) * | 2012-11-27 | 2013-03-20 | 无锡力合光电石墨烯应用研发中心有限公司 | Transparent conductive film layer for capacitive touch screen |
| CN103915529A (en) * | 2014-04-16 | 2014-07-09 | 沙嫣 | Production method of tiny amorphous silicon thin film solar cell |
| CN104386680A (en) * | 2014-11-14 | 2015-03-04 | 沙嫣 | Method for large-scale preparation of bulky graphene |
-
2017
- 2017-09-08 CN CN201710806075.2A patent/CN107611189A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102656702A (en) * | 2009-08-07 | 2012-09-05 | 格尔德殿工业公司 | Electronic device including graphene-based layer(s), and/or method of making the same |
| CN102522437A (en) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | CIGS solar cell device and manufacturing method thereof |
| CN102891074A (en) * | 2012-10-22 | 2013-01-23 | 西安电子科技大学 | SiC substrate-based graphene CVD (Chemical Vapor Deposition) direct epitaxial growth method and manufactured device |
| CN102982861A (en) * | 2012-11-27 | 2013-03-20 | 无锡力合光电石墨烯应用研发中心有限公司 | Transparent conductive film layer for capacitive touch screen |
| CN103915529A (en) * | 2014-04-16 | 2014-07-09 | 沙嫣 | Production method of tiny amorphous silicon thin film solar cell |
| CN104386680A (en) * | 2014-11-14 | 2015-03-04 | 沙嫣 | Method for large-scale preparation of bulky graphene |
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Application publication date: 20180119 |