CN107591397B - High alignment precision thin film circuit production method and thin film circuit on ltcc substrate - Google Patents
High alignment precision thin film circuit production method and thin film circuit on ltcc substrate Download PDFInfo
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- CN107591397B CN107591397B CN201710736291.4A CN201710736291A CN107591397B CN 107591397 B CN107591397 B CN 107591397B CN 201710736291 A CN201710736291 A CN 201710736291A CN 107591397 B CN107591397 B CN 107591397B
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- thin film
- ltcc substrate
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Abstract
The invention discloses alignment precision thin film circuit production method high on a kind of ltcc substrate and thin film circuits, pass through polishing, the surface of cleaning ltcc substrate thin film circuit to be produced；The position in surface metalation hole is measured using the alignment mark on ltcc substrate polishing surface as basic point；Multiple layer metal film is sputtered on ltcc substrate polishing surface；By in the position input thin film circuit domain of plated through-hole, the lead location connecting in thin film circuit domain with plated through-hole is finely adjusted, is directed at conducting wire with plated through-hole；Photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine tuning；Thin film circuit domain after fine tuning directly inputs laser direct-writing instrument and is exposed to the photoresist on multiple layer metal film, does not need to make muti-piece mask plate according to the actual size of ltcc substrate, has saved manufacturing cost.
Description
Technical field
The present invention relates to alignment precision thin film circuit production method high on a kind of ltcc substrate and thin film circuits.
Background technique
The advantages of ltcc substrate is that thermal expansion coefficient is small, thermal conductivity is high, and shortcoming is that conductor uses screen printing technique,
Line width/line spacing is larger, generally 100 μm, is unfavorable for high-density wiring；Film wiring technique energy is used on ltcc substrate surface
Enough realize high-density wiring, line width/line spacing is up to 20 μm, and therefore, manufacturing thin film circuit technique on ltcc substrate can be real
Existing high-performance, high-density packages.
It include: that manufacture ltcc substrate, substrate surface first passes through grinding in the step of manufacturing thin film circuit on ltcc substrate
Sputter multiple layer metal film after polishing, then carry out photoetching, plating, when photoetching generally use mask plate to photoresist into
Row exposure, the LTCC shrinkage production of the circuitous pattern of mask plate according to expectation.
It can be shunk when ltcc substrate cofiring in X, Y, Z-direction, such as the receipts of Dupont951 series material X, Y-direction
Shrinkage is 12.7 ± 0.3%, and the shrinking percentage of Z-direction is 15 ± 0.5%.The variation of material composition, etc. the variation of hydrostatic pressure conditions, altogether
Variation and the distribution of silk-screen conductor of burning condition etc. can all influence the shrinking percentage of material, after firing the actual size of circuit with set
Evaluation has deviation.For example, certain ltcc substrate is made using Dupont951PT material, there are 2 plated through-holes on surface, hole center it
Between be that (shrinking percentage calculates 50.00mm according to 12.7% when circuit design, Kong Zhongxin when corresponding circuit fabrication apart from design value
Distance be 57.27mm).Due to the variation of material, circuit design or technological parameter, 2 gold are tested after ltcc substrate cofiring
The distance in categoryization hole is 49.83mm, i.e. shrinking percentage becomes 13%.Test another ltcc substrate find 2 plated through-holes away from
From 50.17mm is become, shrinking percentage becomes 12.4%.
Since the size of ltcc substrate can change, and the mask plate patterns size that while making thin film circuit uses is once
Determination just immobilizes, and when substrate size changes greatly, it is larger that the position of plated through-hole also offsets from design position, on mask plate
The conducting wire that is connected with plated through-hole of some scripts breaking phenomena will occur.In order to avoid breaking phenomena occurs, generally in gold
The biggish undertaking pad of design size on categoryization hole, to guarantee that the conducting wire of thin film circuit can be connect with plated through-hole.But it is big
The undertaking pad of size reduces wiring density, loses the meaning of manufacture thin film circuit.
Therefore, it improves alignment precision when making thin film circuit on ltcc substrate and realizes that high-density packages must solve
Problem.
Summary of the invention
The present invention to solve the above-mentioned problems, proposes high alignment precision thin film circuit production method on a kind of ltcc substrate
And thin film circuit, the present invention can be improved the alignment precision of thin film circuit and plated through-hole on ltcc substrate, realize ltcc substrate
Upper high alignment precision thin film circuit production.
To achieve the goals above, the present invention adopts the following technical scheme:
High alignment precision thin film circuit production method on a kind of ltcc substrate, comprising the following steps:
(1) polishing, clean ltcc substrate thin film circuit to be produced surface；
(2) position in surface metalation hole is measured using the alignment mark on ltcc substrate polishing surface as basic point；
(3) multiple layer metal film is sputtered on ltcc substrate polishing surface；
(4) it by the position input thin film circuit domain of plated through-hole, is connect in thin film circuit domain with plated through-hole
Lead location be finely adjusted, be directed at conducting wire with plated through-hole；
(5) photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine tuning.
In the step (1), ltcc substrate is ground using corundum powder, then uses the smaller cerium oxide of partial size
Micro mist polishes the ltcc substrate after grinding, and the roughness on ltcc substrate surface is less than 20nm after polishing.
In the step (1), alcohol washes ltcc substrate is used.
In the step (2), the position in image measurer measurement surface metalation hole is used.
In the step (2), alignment mark is hole or printed pattern.
In the step (2), alignment mark is several index apertures that ltcc substrate edge is arranged in.
In the step (3), multiple layer metal film is TiW-Au metallization structure, and TiW layers of thickness is less than Au layers of thickness
Degree.
In the step (5), when photoetching, is exposed the photoresist on multiple layer metal film using laser direct-writing instrument.
In the step (5), the ultraviolet laser operation wavelength of laser direct-writing instrument is 400-410nm.
High alignment precision thin film circuit on a kind of ltcc substrate, is prepared by the above method.
Compared with prior art, the invention has the benefit that
(1) present invention measures the position in each ltcc substrate surface metalation hole and inputs in thin film circuit domain, micro-
The position with the thin film circuit conducting wire of plated through-hole interconnection is adjusted, improves thin film circuit conducting wire and plated through-hole alignment precision, no
It needs to make large-sized undertaking pad on plated through-hole, the wiring density of circuit can be improved；
(2) the thin film circuit domain after finely tuning directly inputs laser direct-writing instrument and carries out to the photoresist on multiple layer metal film
Exposure does not need to make muti-piece mask plate according to the actual size of ltcc substrate, has saved manufacturing cost.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.
Fig. 1 is for schematic diagram before and after ltcc substrate surface film the regulation of electrical circuit of the invention；
Wherein, 1-LTCC substrate；2- alignment mark；3- plated through-hole 1；4- plated through-hole 2 (design position)；5- metallization
Hole 2 (physical location)；6- thin film circuit (design position)；7- thin film circuit (after fine tuning).
Specific embodiment:
The invention will be further described with embodiment with reference to the accompanying drawing.
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
In the present invention, term for example "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", " side ",
The orientation or positional relationship of the instructions such as "bottom" is to be based on the orientation or positional relationship shown in the drawings, only to facilitate describing this hair
Bright each component or component structure relationship and the relative of determination, not refer in particular to either component or element in the present invention, cannot understand
For limitation of the present invention.
In the present invention, term such as " affixed ", " connected ", " connection " be shall be understood in a broad sense, and indicate may be a fixed connection,
It is also possible to be integrally connected or is detachably connected；It can be directly connected, it can also be indirectly connected through an intermediary.For
The related scientific research of this field or technical staff can determine the concrete meaning of above-mentioned term in the present invention as the case may be,
It is not considered as limiting the invention.
As background technique is introduced, exist in the prior art after ltcc substrate cofiring since shrinking percentage fluctuates, surface
Also with variation, plated through-hole when causing to make thin film circuit on mask plate patterns and ltcc substrate is difficult for the position of plated through-hole
With the deficiency of alignment, in order to solve technical problem as above, present applicant proposes alignment precision films high on a kind of ltcc substrate
Circuit fabrication method.
In a kind of typical embodiment of the application, as shown in Figure 1, the step of this method includes:
A, the surface of the thin film circuit to be produced of ltcc substrate 1 is subjected to polishing, cleaning,
Ltcc substrate 1 is ground using the corundum powder that partial size is 14 μm first in the present embodiment, improves substrate table
Surface evenness then polishes the ltcc substrate 1 after grinding using the cerium oxide micro mist that partial size is 0.75 μm, after polishing
The roughness on 1 surface of ltcc substrate is less than 20nm, is adapted for thin film circuit production, finally uses alcohol washes LTCC base
Plate 1.
It b, is that basic point measures surface metalation hole 3 and plated through-hole 5 with the alignment mark 2 on 1 polishing surface of ltcc substrate
Position,
Using the relative position of image measurer test alignment mark point 2 and plated through-hole 3 and plated through-hole 5, and with drawing
Figure software autoCAD draws alignment mark point 2 and plated through-hole 3, plated through-hole 5.
Image measurer has higher measurement accuracy, such as the survey of certain model image measurer in biggish measurement range
Amount range is 200mm × 200mm, and the measurement accuracy in X, Y plane is (2.2+L/200) μm, and wherein L indicates measurement length, with
Millimeter is unit.
C, multiple layer metal film is sputtered on 1 polishing surface of ltcc substrate,
Multiple layer metal film is TiW/Au in the present embodiment, TiW layers with a thickness of 50nm, Au layers with a thickness of 200nm.
D, by the position of plated through-hole 3, plated through-hole 5 input thin film circuit domain, in thin film circuit domain with gold
The lead location 6 of categoryization hole connection is finely adjusted, and is adjusted to position 7, is directed at conducting wire with plated through-hole,
E, photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine tuning.
The ultraviolet laser direct writing instrument for being 405nm by the thin film circuit domain input service wavelength after fine tuning in the present embodiment,
The photoresist of TiW/Au layer surface is exposed.Alignment precision of the laser direct-writing instrument within the scope of 100mm × 100mm is 0.5 μ
m。
On ltcc substrate within the scope of 50mm × 50mm, the precision that image measurer measures plated through-hole position is 2.45
μm, the alignment precision of laser direct-writing instrument is 0.5 μm, and the alignment precision that can extrapolate thin film circuit and plated through-hole is 2.95 μm.
And use conventional method within the scope of 50mm × 50mm the alignment precision of thin film circuit and plated through-hole for 170 μm.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Above-mentioned, although the foregoing specific embodiments of the present invention is described with reference to the accompanying drawings, not protects model to the present invention
The limitation enclosed, those skilled in the art should understand that, based on the technical solutions of the present invention, those skilled in the art are not
Need to make the creative labor the various modifications or changes that can be made still within protection scope of the present invention.
Claims (10)
1. high alignment precision thin film circuit production method on a kind of ltcc substrate, it is characterized in that: the following steps are included:
(1) polishing, clean ltcc substrate thin film circuit to be produced surface；
(2) position in surface metalation hole is measured using the alignment mark on ltcc substrate polishing surface as basic point；
(3) multiple layer metal film is sputtered on ltcc substrate polishing surface；
(4) by the position of plated through-hole input thin film circuit domain, in thin film circuit domain with gold
The lead location of categoryization hole connection is finely adjusted, and is directed at conducting wire with plated through-hole；
(5) photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine tuning.
2. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: ltcc substrate is ground using corundum powder in the step (1), it is then smaller using partial size
Cerium oxide micro mist polishes the ltcc substrate after grinding, and the roughness on ltcc substrate surface is less than 20nm after polishing.
3. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: using alcohol washes ltcc substrate in the step (1).
4. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: using the position in image measurer measurement surface metalation hole in the step (2).
5. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: alignment mark is hole or printed pattern in the step (2).
6. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1, it is characterized in that: described
In step (2), alignment mark is several index apertures that ltcc substrate edge is arranged in.
7. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: multiple layer metal film is TiW-Au metallization structure in the step (3), TiW layers of thickness is less than Au layers
Thickness.
8. high alignment precision thin film circuit production method on a kind of ltcc substrate as described in claim 1,
It is characterized in that: in the step (5), when photoetching, exposes the photoresist on multiple layer metal film using laser direct-writing instrument
Light.
9. high alignment precision thin film circuit production method on a kind of ltcc substrate as claimed in claim 8,
It is characterized in that: the ultraviolet laser operation wavelength of the laser direct-writing instrument is 400-410nm.
10. high alignment precision thin film circuit on a kind of ltcc substrate, it is characterized in that: using such as any one of claim 1-9 institute
The method stated is prepared.
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| CN201710736291.4A CN107591397B (en) | 2017-08-24 | 2017-08-24 | High alignment precision thin film circuit production method and thin film circuit on ltcc substrate |
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|---|---|---|---|
| CN201710736291.4A CN107591397B (en) | 2017-08-24 | 2017-08-24 | High alignment precision thin film circuit production method and thin film circuit on ltcc substrate |
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| CN107591397A CN107591397A (en) | 2018-01-16 |
| CN107591397B true CN107591397B (en) | 2019-10-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111683459A (en) * | 2020-05-22 | 2020-09-18 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441843B (en) * | 2018-03-13 | 2020-02-18 | 北京科技大学 | Laser direct-writing preformed photocatalytic plating preparation method for metal patterns on surface of material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW200507279A (en) * | 2003-07-16 | 2005-02-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same; |
| CN102856213B (en) * | 2012-08-24 | 2014-12-10 | 中国兵器工业集团第二一四研究所苏州研发中心 | Thin film multilayer wiring manufacturing method based on LTCC (Low Temperature Co-Fired Ceramic) base plate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111683459A (en) * | 2020-05-22 | 2020-09-18 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
| CN111683459B (en) * | 2020-05-22 | 2022-03-08 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
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