CN107591314A - It is a kind of to form oxide layer and the method for epitaxial layer - Google Patents
It is a kind of to form oxide layer and the method for epitaxial layer Download PDFInfo
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- CN107591314A CN107591314A CN201610537121.9A CN201610537121A CN107591314A CN 107591314 A CN107591314 A CN 107591314A CN 201610537121 A CN201610537121 A CN 201610537121A CN 107591314 A CN107591314 A CN 107591314A
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Abstract
The present invention provides a kind of formation oxide layer and the method for epitaxial layer; substrate surface is radiated at by UV and forms sacrificial oxide layer; then hydrogen source gas is recycled to be surface-treated the substrate with sacrificial oxide layer; then the growth of epitaxial layer is carried out in same chamber, can also continue to oxidation after epitaxial growth forms protective layer.The surface preparation and epitaxial growth of the inventive method can be completed in same reaction chamber situ, extension efficiency high, and resources of production consumption is smaller.Irradiated as a result of UV, epitaxial surface preprocessing process can use and be surface-treated lower temperature than conventional high-temperature, caused by so as to avoid high-temperature process the problems such as warpage deformation of diamond wafer.
Description
Technical field
The present invention relates to microelectronics technology, and oxide layer and the method for epitaxial layer are formed more particularly to a kind of.
Background technology
In semiconductor fabrication process, in order to obtain the epitaxial layer of high quality, the surface treatment of wafer is extremely important.Traditional table
Face processing method is to use wet-treating, relatively thin chemical oxide layer is formed by chemical reagent such as SC-1 etc., so as to protect
Wafer, avoid it in follow-up storage, transport etc. during be contaminated.But the storage of long-term can cause this chemical oxygen
Change the degeneration of layer, crystal column surface is polluted by materials such as such as carbon, oxide heterogeneous, metals.Therefore, given birth in extension
Need to use in-situ hydrogen or HCl/H before length2Carry out high temperature pretreatment.
But the temperature of this high temperature pretreatment is typically up to 900-1200 DEG C, easily causes warpage, slip of diameter wafers etc.
Deformation, such as a diameter of 300mm, 450mm wafer, can also have an impact even for the 200mm of thinner thickness wafer.
In addition, this high-temperature process is also not suitable for being applied in some advanced device structures, for example, FinFET, FDSOI, strain SD
Deng.
U.S. Patent number：US8317921B2 patent document discloses a kind of grown in chemical vapor deposition chamber situ and aoxidized
The method of thing and silicon layer, this method are initially formed one layer of sacrificial oxide layer before epitaxial silicon, and then adding hydrogen high-temperature baking makes oxidation
Thing volatilizees to obtain the substrate of cleaning, so as to continue the epitaxial growth in situ for carrying out silicon on the clean substrate.But it is this
The method of growth oxidation sacrifice layer in conventional epitaxial chamber, controllability is poor if using low-temperature oxidation, and adds hydrogen baking
More than 900 DEG C of high temperature is also required to when removing sacrificial oxide layer.
Therefore, it is necessary to seek a kind of relatively low epitaxial growth surface treatment method for the treatment of temperature in fact, to overcome high-temperature process
Wafer and caused by variety of problems.
The content of the invention
Prior art in view of the above, oxide layer and the method for epitaxial layer are formed it is an object of the invention to provide a kind of, is used for
Variety of problems caused by solving the surface high-temp processing before epitaxial growth in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of method for forming oxide layer, comprises the following steps：
Substrate is put into the chamber；
Oxygen source gas is introduced in the cavity, and is irradiated by ultraviolet, the surface oxidation of the substrate is formed oxide layer.
Preferably, when forming the oxide layer, it is 700-800 DEG C to control the temperature in the chamber.
Preferably, the oxygen source gas is O2、O3、N2O, the one or more in NO.
Preferably, when forming the oxide layer, the time that is passed through of the oxygen source gas is 0.5-3min, the stream of the oxygen source gas
Measure as 50-500sccm, pressure is 50-600Torr in the cavity.
Preferably, when ultraviolet irradiates, the ultraviolet wavelength used is 400-10nm, irradiation power 30-200W/cm2, spoke
It is 1msec-3min according to the time.
In order to achieve the above objects and other related objects, the present invention also provides a kind of formation oxide layer and the method for epitaxial layer, including
Following steps：
Substrate is put into the chamber；
Oxygen source gas is introduced in the cavity, and is irradiated by ultraviolet, is formed the surface oxidation of the substrate and is sacrificed oxidation
Layer；
Stop introducing the oxygen source gas, and introduce hydrogen source gas in the cavity to the substrate formed with the sacrificial oxide layer
It is surface-treated, the sacrificial oxide layer is reacted with the hydrogen source gas and is generated volatile matter, the lining after being surface-treated
Bottom；
Continuation carries out epitaxial growth in the cavity, and epitaxial layer is formed on substrate after surface treatment.
Preferably, when forming the sacrificial oxide layer, it is 700-800 DEG C to control the temperature in the chamber.
Preferably, when forming the sacrificial oxide layer, the oxygen source gas is O2、O3、N2O, the one or more in NO.
Preferably, when forming the sacrificial oxide layer, the time that is passed through of the oxygen source gas is 0.5-3min, the oxygen source gas
Flow be 50-500sccm, pressure is 50-600Torr in the cavity.
Preferably, when forming the sacrificial oxide layer, for 400-10nm, irradiation power is the ultraviolet wavelength used
30-200W/cm2, exposure time 1msec-3min.
Preferably, when introducing hydrogen source gas is surface-treated to the substrate formed with the sacrificial oxide layer, the chamber is controlled
Interior temperature is 700-800 DEG C.
Preferably, when introducing hydrogen source gas is surface-treated to the substrate formed with the sacrificial oxide layer, in the chamber
Carry out ultraviolet irradiation.The substrate formed with the sacrificial oxide layer is carried out at surface it is further preferred that introducing hydrogen source gas
During reason, the ultraviolet wavelength that ultraviolet irradiation uses is 400-10nm, irradiation power 30-200W/cm2, exposure time is
1msec-3min。
Preferably, the hydrogen source gas is H2Gas, HF and H2Mixed gas or HCl and H2Mixed gas.
Preferably, when introducing hydrogen source gas is surface-treated to the substrate formed with the sacrificial oxide layer, the hydrogen source gas
The time that is passed through be 0.5-3min, pressure is 50-600Torr in the cavity.
Preferably, the hydrogen source gas is H2During gas, H2Flow be 10-30slm；The hydrogen source gas is HF and H2's
During mixed gas, H2Flow be 10-30slm, HF flow is 50-500sccm；The hydrogen source gas is HCl and H2
Mixed gas when, H2Flow be 10-30slm, HCl flow is 50-500sccm.
Preferably, when carrying out the epitaxial growth, infrared radiation is carried out in the chamber.It is further preferred that infrared ray
During irradiation, the infrared wave a length of 100um-750nm, irradiation power 50-150W/cm of use2, exposure time 0.5-3min.
Preferably, the oxide layer and the method for epitaxial layer of the present invention of being formed also includes, and is formed in the epi-layer surface of formation
Protect oxide layer.
Preferably, when forming the protection oxide layer, oxygen source gas is introduced in the cavity, and purple is carried out in the chamber
Outside line is irradiated.
It is further preferred that when forming the protection oxide layer, the oxygen source gas of introducing is O2、O3、N2O, one in NO
Kind or it is a variety of, the time that is passed through of oxygen source gas is 0.5-3min, and the flow of oxygen source gas is 50-500sccm, the cavity internal pressure
Strong is 50-600Torr.
It is further preferred that irradiated by ultraviolet to be formed it is described protection oxide layer when, the ultraviolet wavelength used for 400-10nm,
Irradiation power is 30-200W/cm2, exposure time 1msec-3min.
Preferably, when forming the protection oxide layer, it is 700-800 DEG C to control the temperature in the chamber.
As described above, the method for the formation oxide layer and epitaxial layer of the present invention, has the advantages that：
The formation oxide layer of the present invention and the method for epitaxial layer, substrate surface is radiated at by UV and forms sacrificial oxide layer, then
Hydrogen source gas is recycled to be surface-treated the substrate with sacrificial oxide layer, so as to obtain pure being suitable to epitaxial growth
Surface, after being surface-treated, the growth in situ for carrying out epitaxial layer, epitaxial growth it can also continue to afterwards in same chamber
Oxidation forms protective layer.The surface preparation and epitaxial growth of the inventive method can be completed in same reaction chamber situ, outside
Prolong efficiency high, resources of production consumption is smaller.Irradiated as a result of UV, under the activation of UV ray, epitaxial surface
Preprocessing process can use and be surface-treated lower temperature than conventional high-temperature, such as 700-800 DEG C, be made so as to avoid high-temperature process
Into warpage deformation of diamond wafer the problems such as.Relatively low treatment temperature, which makes the present invention can be additionally used in some, to be needed to avoid high-temperature process, such as
In the manufacturing process of the advanced device structure such as FinFET, FDSOI.
Brief description of the drawings
Fig. 1 is shown as the schematic diagram provided by the invention for forming oxidation layer method.
Fig. 2 is shown as the schematic diagram of formation oxide layer provided by the invention and the method for epitaxial layer.
Component label instructions
S101~S102 steps
S201~S204 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand easily the present invention other advantages and effect.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
God is lower to carry out various modifications or alterations.It should be noted that in the case where not conflicting, the feature in following examples and embodiment
It can be mutually combined.
It should be noted that the diagram provided in following examples only illustrates the basic conception of the present invention in a schematic way, scheme then
Component count, shape and size drafting when the component relevant with the present invention is only shown in formula rather than being implemented according to reality, in fact
Kenel, quantity and the ratio of each component can be a kind of random change when border is implemented, and its assembly layout kenel may also be answered more
It is miscellaneous.
Referring to Fig. 1, the present invention provides a kind of method for forming oxide layer, comprise the following steps：
S101 is put into substrate in the chamber；
S102 introduces oxygen source gas in the cavity, and is irradiated by ultraviolet, the surface oxidation of the substrate is formed oxidation
Layer.
Specifically, the chamber can be the various vacuum reaction chambers for preparing film, or other are applied to prepare the anti-of oxide layer
Answer chamber.The substrate can be common Semiconductor substrate, such as silicon substrate, germanium substrate, or other need to prepare Surface Oxygen
Change the substrate of the various materials of layer.
In step s 102, when forming the oxide layer, it is preferable that it is 700-800 DEG C to control the temperature in the chamber.Institute
It is preferably O to state oxygen source gas2、O3、N2O, the one or more in NO, or other be suitable as oxygen source introducing gas.
When forming the oxide layer, pressure is preferably 50-600Torr in the cavity, and the flow of the oxygen source gas can be
50-500sccm.The time that is passed through of the oxygen source gas is preferably 0.5-3min.When ultraviolet irradiates, the ultraviolet wavelength of use
Preferably 400-10nm, irradiation power are preferably 30-200W/cm2, exposure time is preferably 1msec-3min.
The method that the present invention irradiates enhancing as a result of ultraviolet, when substrate surface aoxidizes to form the oxide layer, it can incite somebody to action
Temperature control in the chamber avoids or reduced harmful effect of the high temperature to substrate at 700-800 DEG C, and traditional high temperature oxygen
The oxide layer forming method for changing surface usually requires more than 900 DEG C of high temperature.
Referring to Fig. 2, the present invention also provides a kind of formation oxide layer and the method for epitaxial layer, comprise the following steps：
S201 is put into substrate in the chamber；
S202 introduces oxygen source gas in the cavity, and is irradiated by ultraviolet, forms the surface oxidation of the substrate and sacrifices
Oxide layer；
S203 stops introducing the oxygen source gas, and introduces hydrogen source gas in the cavity to formed with the sacrificial oxide layer
Substrate is surface-treated, and the sacrificial oxide layer is reacted with the hydrogen source gas and is generated volatile matter, after obtaining surface treatment
Substrate；
S204 continues to carry out epitaxial growth in the cavity, and epitaxial layer is formed on substrate after surface treatment.
This method can be used for the surface preparation of epitaxial growth, and in same chamber growth in situ epitaxial layer.Specifically, the chamber
Room can be the vacuum reaction chamber for being suitable for epitaxial growth, such as the reaction chamber of chemical vapor deposition (CVD) equipment.
The substrate can be common Semiconductor substrate, such as silicon substrate, germanium substrate, or the other materials available for epitaxial growth
Substrate.
In step S202, when forming the sacrificial oxide layer, it is preferable that it is 700-800 DEG C to control the temperature in the chamber.
The oxygen source gas is preferably O2、O3、N2O, the one or more in NO, or other be suitable as oxygen source introducing
Gas.When forming the sacrificial oxide layer, pressure is preferably 50-600Torr in the cavity, the flow of the oxygen source gas
Can be 50-500sccm.The time that is passed through of the oxygen source gas is preferably 0.5-3min.Ultraviolet irradiate when, use it is ultraviolet
Line wavelength is preferably 400-10nm, and irradiation power is preferably 30-200W/cm2, exposure time is preferably 1msec-3min.By
The sacrificial oxide layer formed in this step can be fallen in subsequent step by reactive ion etching, therefore, the thickness of the sacrificial oxide layer
Can be 1-3nm according to actual conditions.
In step S203, when being surface-treated to the substrate formed with the sacrificial oxide layer, it is preferable that control the chamber
Indoor temperature is 700-800 DEG C.
, can also be in the chamber when being surface-treated to the substrate formed with the sacrificial oxide layer in step S203
It is irradiated using ultraviolet, under the humidification of ultraviolet irradiation, is advantageous to the hydrogen source gas and the sacrificial oxide layer
Abundant reaction.The ultraviolet wavelength used is 400-10nm, irradiation power 30-200W/cm2, exposure time is
1msec-3min。
Specifically, the hydrogen source gas can be H2Gas, HF and H2Mixed gas or be HCl and H2Gaseous mixture
Body.When being surface-treated to the substrate formed with the sacrificial oxide layer, pressure is preferably 50-600Torr in the cavity,
The time that is passed through of the hydrogen source gas can be 0.5-3min.The hydrogen source gas is H2During gas, H2Flow can be
10-30slm；The hydrogen source gas is HF and H2Mixed gas when, H2Flow can be 10-30slm, HF flow
Can be 50-500sccm；The hydrogen source gas is HCl and H2Mixed gas when, H2Flow can be 10-30slm,
HCl flow can be 50-500sccm.
The time that step S203 is surface-treated can be according to actual conditions such as the sacrificial oxide layer thickness that substrate surface is formed
Depending on, after the completion of surface treatment, the original pollutant of substrate surface, such as carbon, oxide heterogeneous, metal material can be with
The removal of sacrificial oxide layer and remove in the lump, substrate surface is become pure, be adapted for epitaxial growth.Step S204 continues
Before carrying out epitaxial growth in the cavity, the unwanted gas such as volatile matter caused by step S203 reactions can be detached described
Chamber, it is easy to obtain high-quality epitaxial layer.
In step S204, when carrying out epitaxial growth, the source of the gas of needs, example can be introduced in the cavity according to actual conditions
Such as, H can be introduced by carrying out growing epitaxial silicon2、HCl、SiH2Cl2Or SiHCl3、SiCl4、Si2H6、SiH4Deng as that need to mix
It is miscellaneous, the dopant of needs is may be incorporated into, this is the known technology of those skilled in the art, and and therefore not to repeat here.
As the preferred scheme of the present invention, when carrying out the epitaxial growth, can also be carried out using infrared ray in the chamber
Irradiation, so as to heat the chamber to suitable temperature.During infrared radiation, the IR wavelength of use is preferably
100um-750nm, irradiation power 50-150W/cm2, exposure time 0.5-3min.
After step S204 forms the epitaxial layer, the epi-layer surface that can also continue in formation forms protection oxidation
Layer, to protect formed epi-layer surface.Preferably, when forming the protection oxide layer, oxygen source is introduced in the cavity
Gas, and ultraviolet irradiation is carried out in the chamber.The oxygen source gas of introducing can be O2、O3、N2O, one in NO
Kind is a variety of；The time that is passed through of oxygen source gas is preferably 0.5-3min, and the flow of oxygen source gas can be 50-500sccm, described
Pressure is preferably 50-600Torr in cavity.When irradiating to form the protection oxide layer by ultraviolet, the ultraviolet wavelength of use
Preferably 400-10nm, irradiation power are preferably 30-200W/cm2, exposure time is preferably 1msec-3min.Form protection
During oxide layer, the temperature in the chamber may be controlled to 700-800 DEG C.
Technical scheme is described in detail below by specific example.
Embodiment one
The present embodiment offer is a kind of to be formed in situ oxide layer and the method for epitaxial layer, comprises the following steps：
First, it is put into silicon substrate in CVD reaction chambers.
Then, oxygen source gas, e.g., O are introduced in the cavity2、O3、N2O, the one or more in NO, the chamber is made
Internal pressure is 50-600Torr.Oxygen source gas flow is 50-500sccm, and it is 0.5-3min to be passed through the time.Simultaneously using ultraviolet
Ultraviolet of the lamp using wavelength as 400-10nm is irradiated, irradiation power 30-200W/cm2, exposure time 1msec-3min.
And by the temperature control in chamber at 700-800 DEG C, so that the surface oxidation of silicon substrate forms sacrificial oxide layer.Obtained sacrifice
Oxidated layer thickness is about 2nm.
Next, stopping introducing the oxygen source gas, and hydrogen source gas is introduced in the cavity to being aoxidized formed with described sacrifice
The silicon substrate of layer is surface-treated, and the sacrificial oxide layer is reacted with the hydrogen source gas and is generated volatile matter, is obtained surface
Silicon substrate after processing.In the present embodiment, the hydrogen source gas of introducing is pure H2, flow 10-30slm, pressure is in cavity
50-600Torr, the time that is passed through of hydrogen source gas is 0.5-3min.By the temperature control in chamber at 700-800 DEG C during reaction.It is raw
Into volatile matter in H2Chamber is discharged under air-flow impetus, after surface treatment, surface of silicon becomes pure, suitable for follow-up
Growing epitaxial silicon.
Then, the source of the gas that silicon epitaxy needs, such as H are introduced2、HCl、SiH2Cl2Or SiHCl3、SiCl4、Si2H6、SiH4Deng,
Continuation carries out epitaxial growth in the cavity, and silicon epitaxy layer is formed on silicon substrate after surface treatment.During epitaxial growth, adopt
It is irradiated with infrared ray in the chamber, a length of 100um-750nm of infrared wave of use, irradiation power is
50-150W/cm2, exposure time 0.5-3min.
Embodiment two
The present embodiment offer is a kind of to be formed in situ oxide layer and the method for epitaxial layer, using the technical side essentially identical with embodiment one
Method, it is with the difference of embodiment one, when being surface-treated to the silicon substrate formed with the sacrificial oxide layer, in institute
State in chamber and be irradiated using uviol lamp, under the humidification of ultraviolet irradiation, be advantageous to H2With the sacrificial oxide layer
Fully reaction.The ultraviolet wavelength used is 400-10nm, irradiation power 30-200W/cm2, exposure time 1msec-3min.
Embodiment three
The present embodiment provide it is a kind of is formed in situ oxide layer and the method for epitaxial layer, using with the basic identical technical side of embodiment two
Method, it is with the difference of embodiment two, when being surface-treated to the silicon substrate formed with the sacrificial oxide layer, uses
HF and H2Mixed gas as hydrogen source gas, H2Flow be 10-30slm, HF flow is 50-500sccm, described
The time that is passed through of hydrogen source gas is 0.5-3min, and pressure is 50-600Torr in the cavity.
HF gases are introduced to be surface-treated, can be with more efficiently by original pollutant on substrate, such as carbon, heterogeneous
The materials such as oxide, metal remove in the lump.
Example IV
The present embodiment offer is a kind of to be formed in situ oxide layer and the method for epitaxial layer, using the technical side essentially identical with embodiment three
Method, it is with the difference of embodiment three, when being surface-treated to the silicon substrate formed with the sacrificial oxide layer, uses
HCl and H2Mixed gas as hydrogen source gas, H2Flow be 10-30slm, HCl flow is 50-500sccm, chamber
Internal pressure is 50-600Torr, and the time that is passed through of hydrogen source gas is 0.5-3min.Introduce same when HCl gases are surface-treated
Sample can be removed original pollutant on substrate, such as carbon, oxide heterogeneous, metal material in the lump with more efficiently.
Embodiment five
The present embodiment provide it is a kind of is formed in situ oxide layer and the method for epitaxial layer, embodiment one into example IV any one
Method is prepared after epitaxial layer, and continuation is passed through oxygen source gas and aoxidizes the epi-layer surface in the cavity, forms protection
Oxide layer, to protect formed epi-layer surface, avoid polluting or damaging in follow-up processing step.
The oxygen source gas being passed through can be O2、O3、N2O, the one or more in NO, during oxidation reaction, in the cavity
Pressure is 50-600Torr, oxygen source gas flow 50-500sccm, and it is 0.5-3min to be passed through the time.It can also use simultaneously ultraviolet
Lamp is that ultraviolet of the wavelength as 400-10nm is irradiated using frequency, irradiation power 30-200W/cm2, exposure time is
1msec-3min.And by the temperature control in chamber at 700-800 DEG C.Obtained protection oxidated layer thickness is about 1-3nm.
In summary, formation oxide layer of the invention and the method for epitaxial layer, it is radiated at substrate surface by UV and is formed and sacrifice oxygen
Change layer, then recycle hydrogen source gas to be surface-treated the substrate with sacrificial oxide layer, so as to obtain pure be suitable to
The surface of epitaxial growth, after being surface-treated, can the in situ growth for carrying out epitaxial layer in same chamber, after epitaxial growth
It can also continue to form oxide protective layer.The surface preparation and epitaxial growth of the present invention can be complete in same reaction chamber situ
Into extension efficiency high, the resources of production consume smaller.Irradiated as a result of UV, under UV humidifications, epitaxial surface
Preprocessing process can use and be surface-treated lower temperature than conventional high-temperature, such as 700-800 DEG C, so as to avoid or reduce high temperature
Caused by processing the problems such as warpage deformation of diamond wafer.Relatively low treatment temperature, which makes the present invention can be additionally used in some, to be needed to avoid high-temperature process
, in such as manufacturing process of FinFET, FDSOI advanced device structure.So the present invention effectively overcomes in the prior art
Various shortcoming and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art without departing from disclosed spirit with completed under technological thought all etc.
Modifications and changes are imitated, should be covered by the claim of the present invention.
Claims (23)
- A kind of 1. method for forming oxide layer, it is characterised in that comprise the following steps：Substrate is put into the chamber；Oxygen source gas is introduced in the cavity, and is irradiated by ultraviolet, the surface oxidation of the substrate is formed oxidation Layer.
- 2. the method according to claim 1 for forming oxide layer, it is characterised in that：When forming the oxide layer, the chamber is controlled Indoor temperature is 700-800 DEG C.
- 3. the method according to claim 1 for forming oxide layer, it is characterised in that：The oxygen source gas is O2、O3、N2O、 One or more in NO.
- 4. the method according to claim 1 for forming oxide layer, it is characterised in that：When forming the oxide layer, the oxygen source gas The time that is passed through of body is 0.5-3min, and the flow of the oxygen source gas is 50-500sccm, and pressure is in the cavity 50-600Torr。
- 5. the method according to claim 1 for forming oxide layer, it is characterised in that：When ultraviolet irradiates, the ultraviolet ripple of use A length of 400-10nm, irradiation power 30-200W/cm2, exposure time 1msec-3min.
- 6. a kind of form oxide layer and the method for epitaxial layer, it is characterised in that the described method comprises the following steps：Substrate is put into the chamber；Oxygen source gas is introduced in the cavity, and is irradiated by ultraviolet, is formed the surface oxidation of the substrate and is sacrificed Oxide layer；Stop introducing the oxygen source gas, and introduce hydrogen source gas in the cavity to formed with the sacrificial oxide layer Substrate is surface-treated, and the sacrificial oxide layer is reacted with the hydrogen source gas and is generated volatile matter, is surface-treated Substrate afterwards；Continuation carries out epitaxial growth in the cavity, and epitaxial layer is formed on substrate after surface treatment.
- 7. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：When forming the sacrificial oxide layer, It is 700-800 DEG C to control the temperature in the chamber.
- 8. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：When forming the sacrificial oxide layer, The oxygen source gas is O2、O3、N2O, the one or more in NO.
- 9. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：When forming the sacrificial oxide layer, The time that is passed through of the oxygen source gas is 0.5-3min, and the flow of the oxygen source gas is 50-500sccm, the cavity internal pressure Strong is 50-600Torr.
- 10. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Described sacrifice is formed to aoxidize During layer, the ultraviolet wavelength used is 400-10nm, irradiation power 30-200W/cm2, exposure time 1msec-3min.
- 11. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Hydrogen source gas is introduced to shape When being surface-treated into the substrate for having the sacrificial oxide layer, it is 700-800 DEG C to control the temperature in the chamber.
- 12. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Hydrogen source gas is introduced to shape When being surface-treated into the substrate for having the sacrificial oxide layer, ultraviolet irradiation is carried out in the chamber.
- 13. according to claim 12 form oxide layer and the method for epitaxial layer, it is characterised in that：Introduce hydrogen source gas pair When substrate formed with the sacrificial oxide layer is surface-treated, the ultraviolet wavelength that ultraviolet irradiation uses is 400-10 Nm, irradiation power 30-200W/cm2, exposure time 1msec-3min.
- 14. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：The hydrogen source gas is H2Gas, HF and H2Mixed gas or HCl and H2Mixed gas.
- 15. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Hydrogen source gas is introduced to shape When being surface-treated into the substrate for having the sacrificial oxide layer, the time that is passed through of the hydrogen source gas is 0.5-3min, described Pressure is 50-600Torr in cavity.
- 16. according to claim 14 form oxide layer and the method for epitaxial layer, it is characterised in that：The hydrogen source gas is H2During gas, H2Flow be 10-30slm；The hydrogen source gas is HF and H2Mixed gas when, H2Flow be 10-30slm, HF flow are 50-500sccm；The hydrogen source gas is HCl and H2Mixed gas when, H2Stream Measure as 10-30slm, HCl flow is 50-500sccm.
- 17. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Carry out the epitaxial growth When, infrared radiation is carried out in the chamber.
- 18. according to claim 16 form oxide layer and the method for epitaxial layer, it is characterised in that：During infrared radiation, The infrared wave a length of 100um-750nm, irradiation power 50-150W/cm of use2, exposure time 0.5-3min.
- 19. according to claim 6 form oxide layer and the method for epitaxial layer, it is characterised in that：Also include, in formation The epi-layer surface forms protection oxide layer.
- 20. according to claim 19 form oxide layer and the method for epitaxial layer, it is characterised in that：Form the protection oxygen When changing layer, oxygen source gas is introduced in the cavity, and ultraviolet irradiation is carried out in the chamber.
- 21. according to claim 20 form oxide layer and the method for epitaxial layer, it is characterised in that：Form the protection oxygen When changing layer, the oxygen source gas of introducing is O2、O3、N2O, the one or more in NO, the time that is passed through of oxygen source gas is 0.5-3min, the flow of oxygen source gas are 50-500sccm, and pressure is 50-600Torr in the cavity.
- 22. according to claim 20 form oxide layer and the method for epitaxial layer, it is characterised in that：Irradiated by ultraviolet When forming the protection oxide layer, the ultraviolet wavelength used is 400-10nm, irradiation power 30-200W/cm2, spoke It is 1msec-3min according to the time.
- 23. according to claim 19 form oxide layer and the method for epitaxial layer, it is characterised in that：Form the protection oxygen When changing layer, it is 700-800 DEG C to control the temperature in the chamber.
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| CN201610537121.9A CN107591314A (en) | 2016-07-08 | 2016-07-08 | It is a kind of to form oxide layer and the method for epitaxial layer |
| TW105140000A TWI608133B (en) | 2016-07-08 | 2016-12-02 | A method of forming oxide layer and epitaxy layer |
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| CN201610537121.9A Pending CN107591314A (en) | 2016-07-08 | 2016-07-08 | It is a kind of to form oxide layer and the method for epitaxial layer |
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| WO2022186775A1 (en) * | 2021-03-02 | 2022-09-09 | Agency For Science, Technology And Research | A preparation chamber for cleaning and repair sapphire surface for the epitaxial growth of compound materials |
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| CN1302454A (en) * | 1998-05-21 | 2001-07-04 | Memc电子材料有限公司 | Process for preparation of epitaxial wafers for resistivity measurements |
| US7030038B1 (en) * | 1997-07-31 | 2006-04-18 | Texas Instruments Incorporated | Low temperature method for forming a thin, uniform oxide |
| CN101765900A (en) * | 2007-07-26 | 2010-06-30 | 应用材料股份有限公司 | Method and apparatus for cleaning a substrate surface |
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| TW201448044A (en) * | 2013-06-13 | 2014-12-16 | Arbl Co Ltd | Oxide layer generating method of semiconductor |
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| US7030038B1 (en) * | 1997-07-31 | 2006-04-18 | Texas Instruments Incorporated | Low temperature method for forming a thin, uniform oxide |
| CN1302454A (en) * | 1998-05-21 | 2001-07-04 | Memc电子材料有限公司 | Process for preparation of epitaxial wafers for resistivity measurements |
| CN101765900A (en) * | 2007-07-26 | 2010-06-30 | 应用材料股份有限公司 | Method and apparatus for cleaning a substrate surface |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022186775A1 (en) * | 2021-03-02 | 2022-09-09 | Agency For Science, Technology And Research | A preparation chamber for cleaning and repair sapphire surface for the epitaxial growth of compound materials |
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| TW201809378A (en) | 2018-03-16 |
| TWI608133B (en) | 2017-12-11 |
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