CN1075886C - Room temp. gas-sensitive device of nm. tin dioxide and its mfg. method - Google Patents
Room temp. gas-sensitive device of nm. tin dioxide and its mfg. method Download PDFInfo
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- CN1075886C CN1075886C CN97114210A CN97114210A CN1075886C CN 1075886 C CN1075886 C CN 1075886C CN 97114210 A CN97114210 A CN 97114210A CN 97114210 A CN97114210 A CN 97114210A CN 1075886 C CN1075886 C CN 1075886C
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- China
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- sensitive device
- sno
- gas sensitive
- nano sno
- solution
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Abstract
The present invention relates to a room-temperature gas sensitive device and a manufacturing method thereof. Firstly, Sn(OH)2 particulates are manufactured by a sol-gel method and a hydrolysis method, and precipitates are oscillated and pulverized by ultrasonic waves in the manufacturing process. Then, SnO particulates are obtained by decomposing and dewatering at the low temperature of lower than 100 DEG C. Nanometer SnO2 particulates are manufactured by oxidation. A room-temperature gas sensitive device of nanometer SnO2 is manufactured by pressing and silverly soldering top electrodes. The gas sensitive device has higher sensitivity to oxygen and oxidizing atmosphere at room temperature. The device has the advantages of simple structure, convenient and reliable use, low requirements to production technology and use conditions, and low production cost.
Description
The present invention relates to a kind of room temperature gas sensitive device and manufacture method thereof.
Semi-conductor type SnO2 stupalith is present most widely used gas sensitive, but must working in, it just has the air-sensitive feature more than 150 ℃, therefore when the oxygen content of using the gas sensitive device monitoring of environmental changes, must use special power supply and circuit that element is heated to more than 150 ℃ and could works effectively, use very inconvenient.And the resistance value of the type element is very high, and manufacturing condition is required height, and the product discreteness is bigger, and the entire device cost is also higher.Had in recent years and made SnO
2The report of air-sensitive film, though have higher sensitivity, still more than 100 ℃, technological requirement is higher than stupalith for its working temperature.
The objective of the invention is to develop a kind of gas sensitive device and manufacture method thereof that at room temperature has oxygen and oxidizing atmosphere susceptibility, this device architecture is simple, and is easy to use, and low to production technology and service condition requirement, production cost is low.
In order to achieve the above object, nano SnO of the present invention
2The room temperature gas sensitive device is by SnO
2Thin slice and be plated on the thin slice 2 or 4 silver electrodes and form, and draw by the ductile metal silk, it is characterized in that SnO
2Thin slice is 8 to 15nm nano SnO by granularity
2Particulate is stamped to form.
Nano SnO
2The manufacture method of room temperature gas sensitive device: a) with SnCl
22H
2O: H
2O: HCl is by weight: mix at 1: 15: 0.15, earlier with SnCl
22H
2O adds in the entry, slowly adds HCl and fully stirring, solution is filtered again, and filtrate is put in the mixture of ice and water to refrigerate then; B) treat that solution fully cools off the back and drips 1: 3 ammoniacal liquor to filtrate, detect the pH value of solution simultaneously while stirring, being added to pH value is 6 to 7 o'clock, stops dropping ammonia, and places under 0 ℃ of temperature and cool off, and filters repeatedly three times with filter paper; C) solution is placed 0 ℃ environment sonic oscillation 0.5 to 3 hour, and filter; D) lead to oxygen 3 to 5 hours under in 180 to 200 ℃ of temperature of the white depositions that filtration is obtained, obtain nano SnO
2Material; E) with nano SnO
2, rectangle, ellipse, circle or square sheets are made in the material punching press, and two or four electrodes in the silver soldering, draw with the ductile metal silk.Will device heats during use etc., as long as four electrical leads on the device are inserted an arm of balanced bridge by four terminal potential methods, utilize electrical bridge principle and nano SnO
2What of oxygen content the resistance value of device and the linear relationship of partial pressure of oxygen predict; Also can directly measure nano SnO
2The resistance value of two electrodes of device utilizes the linear relationship of its resistance value and partial pressure of oxygen to predict what of oxygen content equally, uses quite convenient and reliable.
The SnO that employing is made by said method
2The material gas sensitive device at room temperature just has higher susceptibility to oxygen and oxygen voltinism atmosphere, and resistance value becomes the sexual intercourse of line spare with partial pressure of oxygen, makes things convenient for scale to make greatly; In addition, its manufacture craft is simple, only needs general device, needn't sintering, and product is easy to control, low production cost.
The present invention is further illustrated below in conjunction with implementing to go through.
A) with SnCl
22H
2O 200 gram adds in 3000 ml waters, slowly adds 30 milliliters of HCl and fully stirs, solution is filtered, after filtrate be put in the mixture of ice and water refrigerate; B) treat that filtrate fully cools off the ammoniacal liquor that the back dripped to filtrate 1: 3, monitor simultaneously the pH value of solution while stirring, be added to pH value and be 6,6.5 or at 7 o'clock, (the best is 6.5) stops dropping ammonia, and place fully cooling (about 1 hour) under 0 ℃ of temperature, filter repeatedly three times with filter paper; C) filtrate is placed 0 ℃ environment sonic oscillation 0.5,1,1.5,2,2.5 or 3 hour, use double-deck filter paper filtering then, obtain white depositions; D) white depositions that filtration is obtained was led to oxygen 3 to 5 hours under 180 or 200 ℃ of temperature, obtained nano SnO
2Material; E) with nano SnO
2After material fully grinds, put into mould and be pressed into thin slice (disk, elliptical piece, rectangular pieces or square sheets), pressure is 0.2GPa, keeps this pressure more than 1 minute; Two or four electrodes in silver soldering on the thin slice at last.Distance between electrodes can be 2～3mm; The size of thin slice long for 10mm, wide be 4～6mm, the thick 1mm that is about.
Claims (3)
1, a kind of nano SnO
2The room temperature gas sensitive device is by SnO
2Thin slice and be plated on the thin slice 2 or 4 silver electrodes and form, and draw by the ductile metal silk, it is characterized in that SnO
2Thin slice is 8 to 15nm nano SnO by granularity
2Particulate is stamped to form.
2, the described nano SnO of a kind of manufacturing claim 1
2The method of room temperature gas sensitive device is characterized in that processing step comprises: a) with SnCl
22H
2O: H
2O: HCl mixes at 1: 15: 0.15, earlier with SnCl
22H
2O adds in the entry, slowly adds HCl and fully stirring, solution is filtered again, and filtrate is put in the mixture of ice and water to refrigerate then; B) treat that solution fully cools off the back and drips 1: 3 ammoniacal liquor to filtrate, detect the pH value of solution simultaneously while stirring, being added to pH value is 6 to 7 o'clock, stops dropping ammonia, and places under 0 ℃ of temperature and cool off, and filters repeatedly three times with filter paper; C) solution is placed 0 ℃ environment sonic oscillation 0.5 to 3 hour, and filter; D) lead to oxygen 3 to 5 hours under in 180 to 200 ℃ of temperature of the white depositions that filtration is obtained, obtain nano SnO 2 materials; E) with nano SnO
2Rectangle, ellipse, circle or square sheets are made in the material punching press, and two or four electrodes in the silver soldering, draw with the ductile metal silk.
3, a kind of nano SnO of manufacturing claim 1 as claimed in claim 2
2The method of room temperature gas sensitive device is characterized in that processing step b) in adjust filtrate the pH value optimum value be 6.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97114210A CN1075886C (en) | 1997-08-05 | 1997-08-05 | Room temp. gas-sensitive device of nm. tin dioxide and its mfg. method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97114210A CN1075886C (en) | 1997-08-05 | 1997-08-05 | Room temp. gas-sensitive device of nm. tin dioxide and its mfg. method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1175692A CN1175692A (en) | 1998-03-11 |
| CN1075886C true CN1075886C (en) | 2001-12-05 |
Family
ID=5172787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97114210A Expired - Fee Related CN1075886C (en) | 1997-08-05 | 1997-08-05 | Room temp. gas-sensitive device of nm. tin dioxide and its mfg. method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1075886C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100410655C (en) * | 2005-07-05 | 2008-08-13 | 广州大学 | Tin-dioxide-base composite nano air-sensitive material and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100383518C (en) * | 2004-11-05 | 2008-04-23 | 广州大学 | Tin dioxide based nano gas sensitive material and preparation method thereof |
| CN100427943C (en) * | 2006-06-22 | 2008-10-22 | 上海交通大学 | Production of tubing network-structured nano-stannic oxide gas-sensing material |
| CN102788819A (en) * | 2012-07-19 | 2012-11-21 | 华中科技大学 | Tin oxide room-temperature gas-sensitive element and its preparation method |
-
1997
- 1997-08-05 CN CN97114210A patent/CN1075886C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100410655C (en) * | 2005-07-05 | 2008-08-13 | 广州大学 | Tin-dioxide-base composite nano air-sensitive material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1175692A (en) | 1998-03-11 |
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