CN107577098A - 一种阵列基板、液晶显示面板及显示装置 - Google Patents

一种阵列基板、液晶显示面板及显示装置 Download PDF

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CN107577098A
CN107577098A CN201710867409.7A CN201710867409A CN107577098A CN 107577098 A CN107577098 A CN 107577098A CN 201710867409 A CN201710867409 A CN 201710867409A CN 107577098 A CN107577098 A CN 107577098A
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electrode
base palte
array base
tft
film transistor
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韩屹湛
吴忠厚
周留刚
栗首
孙建伟
熊玉龙
李涛
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BOE Technology Group Co Ltd
Hefei BOE Display Lighting Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Display Lighting Co Ltd
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Priority to US16/019,985 priority patent/US20190094640A1/en
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
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    • G02—OPTICS
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    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09G2320/00—Control of display operating conditions
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    • G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

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Abstract

本发明提供了一种阵列基板、液晶显示面板及显示装置，用以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质，本发明提供的阵列基板，包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压。

Description

一种阵列基板、液晶显示面板及显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种阵列基板、液晶显示面板及显示装置。
背景技术
液晶显示面板是液晶显示器(Liquid Crystal Display，LCD)中的重要部件，一般包括对盒设置的阵列基板和彩膜基板，以及填充在阵列基板和彩膜基板之间的液晶分子。液晶显示面板通过电场控制液晶分子的取向使液晶显示面板的透射率发生变化，从而实现显示功能。在液晶显示面板中，控制液晶分子的电场是由像素电极和公共电极之间的电压差(称为像素电压)来决定的，但是由于寄生电容的存在，栅极信号在关闭时会导致像素电极的电压在发生跳变前后存在ΔVp(称为馈通电压)的偏差(feed-through效应)。
像素馈通电压ΔVp可以通过以下方程式(1)来表达：
其中，ΔVp为馈通电压，Cgd为栅极和漏极之间的耦合电容、Clc为液晶电容，Cst为存储电容，Vgh为栅极线高电压(也称为开启电压)，Vgl为栅极线低电压(也称为关闭电压)。
众所周知，该馈通电压ΔVp将造成像素电压极性反转时的不平衡，使得各像素的灰阶电压基准有若干误差，因而使人眼观察到显示画面产生闪烁的现象，降低了液晶显示面板的显示品质。
基于此，如何改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质，是本领域技术人员亟待解决的技术问题。
发明内容
本发明实施例提供了一种阵列基板、液晶显示面板及显示装置，用以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
本发明实施例提供的一种阵列基板，包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压。
本发明实施例提供的阵列基板，包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压，由于至少一条扫描线上连接有用于调节公共电极电压的电容，在薄膜晶体管开启至关闭时，feed-through效应使得像素电极电压随着栅极电压的升降而升降，用于调节公共电极电压的电容使得公共电极电压随着与该电容连接的扫描线上的栅极电压的升降而升降，这样，在显示扫描线上连接有该电容的像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
较佳地，每一条所述扫描线均连接有所述电容。
由于每一条扫描线均连接有用于调节公共电极电压的电容，这样在显示液晶显示面板上的任意像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以尽量消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
较佳地，所述电容设置在所述阵列基板的边沿区域。
由于用于调节公共电极电压的电容设置在阵列基板的边沿区域，这样就不会影响液晶显示面板的开口率。
较佳地，所述电容包括第一电极和第二电极；所述第一电极作为所述电容与所述扫描线连接的一端，所述第二电极作为所述电容与所述公共电极电压连接的一端，所述第一电极和所述第二电极在所述衬底基板上的投影重叠。
较佳地，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极；所述第一电极与所述薄膜晶体管的栅极、所述薄膜晶体管的漏极或所述像素电极同层设置。
由于第一电极与薄膜晶体管的栅极、薄膜晶体管的漏极或像素电极同层设置，这样可以简化工艺。
较佳地，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极；所述第二电极与所述薄膜晶体管的栅极、所述薄膜晶体管的漏极或所述像素电极同层设置。
由于第二电极与薄膜晶体管的栅极、薄膜晶体管的漏极或像素电极同层设置，这样可以简化工艺。
较佳地，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极，与所述像素电极对应的公共电极，与所述公共电极电压连接的公共电极线；所述第二电极复用所述公共电极和/所述公共电极线。
由于第二电极复用公共电极和/公共电极线，这样可以简化工艺。
较佳地，所述公共电极设于所述薄膜晶体管的栅极与所述衬底基板之间，所述公共电极线与所述薄膜晶体管的栅极同层设置，所述第一电极与所述薄膜晶体管的漏极或所述像素电极同层设置。
本发明实施例还提供了一种液晶显示面板，其特征在于，包括本发明任意实施例提供的阵列基板。
由于本发明实施例提供的液晶显示面板采用了上述阵列基板，而上述阵列基板包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压，由于至少一条扫描线上连接有用于调节公共电极电压的电容，在薄膜晶体管开启至关闭时，feed-through效应使得像素电极电压随着栅极电压的升降而升降，用于调节公共电极电压的电容使得公共电极电压随着与该电容连接的扫描线上的栅极电压的升降而升降，这样，在显示扫描线上连接有该电容的像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
本发明实施例还提供了一种显示装置，其特征在于，包括本发明任意实施例提供的液晶显示面板。
由于本发明实施例提供的显示装置采用了上述液晶显示面板，液晶显示面板又采用了上述阵列基板，而上述阵列基板包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压，由于至少一条扫描线上连接有用于调节公共电极电压的电容，在薄膜晶体管开启至关闭时，feed-through效应使得像素电极电压随着栅极电压的升降而升降，用于调节公共电极电压的电容使得公共电极电压随着与该电容连接的扫描线上的栅极电压的升降而升降，这样，在显示扫描线上连接有该电容的像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
附图说明
图1为本发明实施例提供的液晶显示面板的等效线路图；
图2为本发明实施例提供的液晶显示面板中像素在充电阶段和保持阶段液晶两端的电压变化图；
图3为本发明实施例一提供的阵列基板的结构示意图；
图4为本发明实施例二提供的阵列基板的结构示意图；
图5为本发明实施例三提供的阵列基板的结构示意图；
图6为本发明实施例四提供的阵列基板的结构示意图；
图7为本发明实施例五提供的阵列基板的结构示意图；
图8为本发明实施例六提供的阵列基板的结构示意图；
图9(a)～图9(e)为本发明实施例提供的阵列基板的制备工艺流程示意图。
具体实施方式
本发明实施例提供了一种阵列基板、液晶显示面板及显示装置，用以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明的是，本发明附图中各层的厚度和形状不反映真实比例，目的只是示意说明本发明内容。
参见图1-图8，本发明实施例提供的阵列基板，包括：衬底基板11，在衬底基板11上交叉布置的多条扫描线12和多条数据线13，至少一条扫描线12连接有用于调节公共电极电压Vcom的电容14，该电容14的一端连接一条扫描线12，另一端连接至公共电极电压Vcom。
在一较佳实施方式中，电容14设置在阵列基板的边沿区域，例如，电容14设置在阵列基板的左侧边沿区域或右侧边沿区域。
在一较佳实施方式中，如图1所示，每一条扫描线12均连接有电容14(记为Cgc，如图1中虚线框所示)，这样在显示液晶显示面板上的任意像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以尽量消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。包含该阵列基板的液晶显示面板的等效线路图如图1所示，图1中存储电容Cst一端连接公共电极电压Vcom，但本发明实施例并不限于此，存储电容Cst一端例如还可以连接下一根扫描线，存储电容Cst属于现有技术，在此不再赘述。
在一较佳实施方式中，各个电容14的尺寸和形状完全相同，这样便于制作。
阵列基板上设置有电容14后，包含该阵列基板的液晶显示面板中像素在充电阶段和保持阶段液晶两端的电压变化如图2所示。图2表明在薄膜晶体管开启至关闭时，feed-through效应使得像素电极电压随着栅极电压的升降而升降，用于调节公共电极电压的电容使得公共电极电压随着与该电容连接的扫描线上的栅极电压的升降而升降，在显示液晶显示面板上的像素时，该像素的像素电极和公共电极之间的电压差基本维持不变，即ΔV1＝ΔV2＝ΔV3＝ΔV4＝ΔV5，因此，可以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
在一较佳实施方式中，如图3-图8所示，电容14包括第一电极141和第二电极142；第一电极141作为电容14与扫描线12连接的一端，第二电极142作为电容14与公共电极电压Vcom连接的一端，第一电极141和第二电极142在衬底基板11上的投影重叠，这样就能形成垂直电容，从而调节公共电极电压Vcom，使得像素电极和公共电极之间的电压差基本维持不变，因此，可以改善馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。其中，第一电极141和第二电极142之间的重叠面积可根据实际需要进行设定，与馈通电压ΔVp，以及第一电极141与第二电极142之间的距离等因素有关。
如图3-图8所示，通常阵列基板还包括：连接到多条扫描线12和多条数据线13的薄膜晶体管15(如图中虚线框所示)阵列，连接到薄膜晶体管漏极151的像素电极16。
参见图8若制作ADS模式的液晶显示面板，阵列基板一般还包括：与像素电极16对应的公共电极17，与公共电极电压Vcom连接的公共电极线18。
上述电容14中第一电极141和第二电极142的设置可以有多种实现方式，下面结合附图对其进行举例说明。
实施例一：
参见图3，本发明实施例一提供的阵列基板中，第一电极141与像素电极16同层设置，第二电极142与薄膜晶体管15的栅极152同层设置。第一电极141例如可以通过过孔与扫描线12连接，各个电容14的第二电极142可以先连接到一根线上，然后再由该线连接公共电极电压Vcom，该线与数据线13在衬底基板11上的投影例如可以平行。当然，各个电容14的第二电极142也可以各自与公共电极电压Vcom连接，本发明实施例对此并不进行限定。
实施例二：
参见图4，本发明实施例二提供的阵列基板中，第一电极141与像素电极16同层设置，第二电极142与薄膜晶体管15的漏极151同层设置。第一电极141例如可以通过过孔与扫描线12连接，各个电容14的第二电极142可以先连接到一根线上，然后再由该线连接公共电极电压Vcom，该线与数据线13在衬底基板11上的投影例如可以平行。当然，各个电容14的第二电极142也可以各自与公共电极电压Vcom连接，本发明实施例对此并不进行限定。
实施例三：
参见图5，本发明实施例三提供的阵列基板中，第一电极141与薄膜晶体管15的漏极151同层设置，第二电极142与像素电极16同层设置。第一电极141例如可以通过过孔与扫描线12连接，各个电容14的第二电极142可以先连接到一根线上，然后再由该线连接公共电极电压Vcom，该线与数据线13在衬底基板11上的投影例如可以平行。当然，各个电容14的第二电极142也可以各自与公共电极电压Vcom连接，本发明实施例对此并不进行限定。
实施例四：
参见图6，本发明实施例四提供的阵列基板中，第一电极141与薄膜晶体管15的栅极152同层设置，第二电极142与像素电极16同层设置。第一电极141例如可以复用扫描线12或设置在扫描线12上，各个电容14的第二电极142可以先连接到一根线上，然后再由该线连接公共电极电压Vcom，该线与数据线13在衬底基板11上的投影例如可以平行。当然，各个电容14的第二电极142也可以各自与公共电极电压Vcom连接，本发明实施例对此并不进行限定。
实施例五：
参见图7，本发明实施例五提供的阵列基板中，第一电极141与薄膜晶体管15的栅极152同层设置，第二电极142与薄膜晶体管15的漏极151同层设置。第一电极141例如可以复用扫描线12或设置在扫描线12上，各个电容14的第二电极142可以先连接到一根线上，然后再由该线连接公共电极电压Vcom，该线与数据线13在衬底基板11上的投影例如可以平行。当然，各个电容14的第二电极142也可以各自与公共电极电压Vcom连接，本发明实施例对此并不进行限定。
实施例六：
参见图8，本发明实施例六提供的阵列基板，用于ADS模式的液晶显示面板，该阵列基板包括：与像素电极16对应的公共电极17，与公共电极电压Vcom连接的公共电极线18，第二电极142复用公共电极17。
当然，第二电极142并不限于复用公共电极17，第二电极142还可以复用公共电极线18，或者第二电极142还可以复用公共电极17和公共电极线18，本发明实施例对此并不进行限定。
在一较佳实施方式中，公共电极17设于薄膜晶体管15的栅极152与衬底基板11之间，公共电极线18与薄膜晶体管15的栅极152同层设置，第一电极141可以与像素电极16同层设置，如图8所示；第一电极141也可以与薄膜晶体管15的漏极151同层设置，本发明实施例对此并不进行限定。
在另一较佳实施方式中，公共电极17设于像素电极16之上，第二电极142复用公共电极17，第一电极141可以与像素电极16同层设置，或者第一电极141可以与薄膜晶体管15的栅极152同层设置，或者第一电极141可以与薄膜晶体管15的漏极151同层设置，本发明实施例对此并不进行限定。
下面以本发明实施例六提供的阵列基板为例，结合附图9(a)～9(e)来具体说明本发明实施例提供的阵列基板的制备工艺流程。
步骤一、参见图9(a)，通过第一次构图工艺在衬底基板11上形成公共电极17；
其中，公共电极17同时作为第二电极142。
步骤二、参见图9(b)，通过第二次构图工艺形成薄膜晶体管的栅极152、扫描线12和公共电极线18；
其中，公共电极线18与公共电极17连接，薄膜晶体管的栅极152与公共电极17不接触，栅极152、扫描线12和公共电极线18的材料例如可以采用Mo/Al/Mo。
步骤三、参见图9(c)，在栅极152、扫描线12和公共电极线18上形成栅绝缘层，在栅绝缘层上通过第三次构图工艺形成有源层、源极、漏极151和数据线13；
其中，源极和数据线13连接，源极、漏极151和数据线13的材料例如可以采用Mo/Al/Mo。
步骤四、参见图9(d)，在源极、漏极151和数据线13上形成钝化层，并通过第四次构图工艺形成第一过孔191和第二过孔192；
步骤五、参见图9(e)，在形成有第一过孔191和第二过孔192的钝化层上，通过第五次构图工艺形成像素电极16和第一电极141；
其中，像素电极16通过第一过孔191与薄膜晶体管的漏极151连接，第一电极141通过第二过孔192与扫描线12连接，第一电极141和第二电极142在衬底基板11上的投影重叠(如图9(e)中虚线框所示)，构成用于调节公共电极电压的电容14。
基于同一发明构思，本发明实施例还提供了一种液晶显示面板，包括本发明任意实施例提供的阵列基板。
基于同一发明构思，本发明实施例提供了一种显示装置，包括：本发明任意实施例提供的液晶显示面板。该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
综上所述，本发明实施例提供的技术方案中，阵列基板包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压，由于至少一条扫描线上连接有用于调节公共电极电压的电容，在薄膜晶体管开启至关闭时，feed-through效应使得像素电极电压随着栅极电压的升降而升降，用于调节公共电极电压的电容使得公共电极电压随着与该电容连接的扫描线上的栅极电压的升降而升降，这样，在显示扫描线上连接有该电容的像素时，像素电极和公共电极之间的电压差将基本维持不变，因此，可以改善或消除馈通电压的影响，从而改善显示画面闪烁问题，提升液晶显示面板的显示品质。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种阵列基板，其特征在于，包括：衬底基板，在所述衬底基板上交叉布置的多条扫描线和多条数据线，至少一条所述扫描线连接有用于调节公共电极电压的电容，所述电容的一端连接一条所述扫描线，另一端连接至所述公共电极电压。
2.根据权利要求1所述的阵列基板，其特征在于，每一条所述扫描线均连接有所述电容。
3.根据权利要求1所述的阵列基板，其特征在于，所述电容设置在所述阵列基板的边沿区域。
4.根据权利要求1-3任一项所述的阵列基板，其特征在于，所述电容包括第一电极和第二电极；所述第一电极作为所述电容与所述扫描线连接的一端，所述第二电极作为所述电容与所述公共电极电压连接的一端，所述第一电极和所述第二电极在所述衬底基板上的投影重叠。
5.根据权利要求4所述的阵列基板，其特征在于，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极；所述第一电极与所述薄膜晶体管的栅极、所述薄膜晶体管的漏极或所述像素电极同层设置。
6.根据权利要求4所述的阵列基板，其特征在于，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极；所述第二电极与所述薄膜晶体管的栅极、所述薄膜晶体管的漏极或所述像素电极同层设置。
7.根据权利要求4所述的阵列基板，其特征在于，所述阵列基板还包括：连接到所述多条扫描线和多条数据线的薄膜晶体管阵列，连接到所述薄膜晶体管漏极的像素电极，与所述像素电极对应的公共电极，与所述公共电极电压连接的公共电极线；所述第二电极复用所述公共电极和/所述公共电极线。
8.根据权利要求7所述的阵列基板，其特征在于，所述公共电极设于所述薄膜晶体管的栅极与所述衬底基板之间，所述公共电极线与所述薄膜晶体管的栅极同层设置，所述第一电极与所述薄膜晶体管的漏极或所述像素电极同层设置。
9.一种液晶显示面板，其特征在于，包括权利要求1～8任一项所述的阵列基板。
10.一种显示装置，其特征在于，包括权利要求9所述的液晶显示面板。
CN201710867409.7A 2017-09-22 2017-09-22 一种阵列基板、液晶显示面板及显示装置 Pending CN107577098A (zh)

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