CN107576629A - A kind of method of testing of mercury cadmium telluride thin film component - Google Patents
A kind of method of testing of mercury cadmium telluride thin film component Download PDFInfo
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- CN107576629A CN107576629A CN201710647279.6A CN201710647279A CN107576629A CN 107576629 A CN107576629 A CN 107576629A CN 201710647279 A CN201710647279 A CN 201710647279A CN 107576629 A CN107576629 A CN 107576629A
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Abstract
The invention provides a kind of method of testing of mercury cadmium telluride thin film component, including：Pending mercury cadmium telluride thin film is fixed on sample stage, and sample stage is put into the sample chamber of infrared spectrometer；Sample chamber and infrared spectrometer are vacuumized respectively, then sample chamber temperature is down to predetermined temperature；Start infrared spectrometer, according to the predefined parameter of predetermined adjustment range regulation infrared spectrometer, and luminescence generated by light is carried out to pending mercury cadmium telluride thin film according to the predefined parameter after regulation and tests to obtain spectrogram, and pending mercury cadmium telluride thin film component is analyzed according to spectrogram.This method carries out luminescence generated by light to mercury cadmium telluride thin film using infrared spectrometer and tests to obtain spectrogram, and mercury cadmium telluride thin film component is analyzed according to spectrogram, calculating is fitted to mercury cadmium telluride thin film component compared to using optical thin film analysis software, mercury cadmium telluride thin film component can be more quickly and accurately obtained, solves problem of the prior art.
Description
Technical field
The present invention relates to laser technology field, more particularly to a kind of method of testing of mercury cadmium telluride thin film component.
Background technology
With the continuous development of laser technology, advanced infrared detector stares face battle array, with more to ultra-large
Strong detection recognition capability, possess two waveband or multiband while the direction of detectivity is developed, wherein, there is two waveband or more
Wave band while detectivity are the main direction of development of infrared focal plane detector.Mercury cadmium telluride is due to quantum efficiency
The advantages that high, operating temperature height, response wave length are with change of component continuously adjustabe, turns into the main of infrared focal plane detector use
Material.
Two waveband mercury cadmium telluride can be handled Dual Spectral Radiation information, significantly improve the anti-interference and target of detector
Recognition capability, applied to various fields such as space remote sensing, infrared reconnaissances.The mercury cadmium telluride thin film material for preparing high quality is to obtain height
The key of the two waveband mercury-cadmium tellurid detector of performance, and the component of mercury cadmium telluride thin film material is the key parameter of thin-film material, it is accurate
Rational evaluation can not only be made to epitaxy technique by really obtaining the component of mercury cadmium telluride thin film, but also can be to epitaxy technique
Process parameter optimizing provide reference, to reduce production cost, improve the quality of the tellurium cadmium mercury epitaxial film ultimately generated, enter
And improve the performance of two waveband mercury cadmium telluride thin film detector.
The method of existing component test, is tested mercury cadmium telluride thin film using Fourier infrared spectrograph and obtains light
Spectrum, is fitted calculating, so as to obtain the component of each layer of mercury cadmium telluride thin film by optical thin film analysis software to the spectrum of acquisition.
Due to needing to carry out approximation processing to some parameters during the Fitting Calculation, each layer of mercury cadmium telluride thin film for making to finally give
Component accuracy is not high, have impact on the raising of tellurium cadmium mercury epitaxial thin-film material quality, also can not be epitaxy technique optimization and change
Enter to provide help.
The content of the invention
The present invention provides a kind of method of testing of mercury cadmium telluride thin film component, to solve the following problem of prior art：It is existing
Some component method of testings, calculating is fitted to spectrum corresponding to mercury cadmium telluride thin film using software, due in calculating process
Need, to some parameter approximations processing, to cause the component accuracy of each layer of mercury cadmium telluride thin film that finally gives not high.
In order to solve the above technical problems, the present invention provides a kind of method of testing of mercury cadmium telluride thin film component, including：It will wait to locate
The mercury cadmium telluride thin film of reason is fixed on sample stage, and the sample stage is put into the sample chamber of infrared spectrometer；To the sample
Product chamber is evacuated to the first preset pressure, is evacuated to the second preset pressure to the infrared spectrometer, then by the sample
Chamber temp is down to predetermined temperature；Start the infrared spectrometer, according to infrared spectrometer described in predetermined adjustment range regulation
Predefined parameter, and luminescence generated by light test is carried out to the pending mercury cadmium telluride thin film according to the predefined parameter after regulation, with
To spectrogram, to be analyzed according to the spectrogram the pending mercury cadmium telluride thin film component.
Optionally, before pending mercury cadmium telluride thin film is fixed on sample stage, in addition to：By the tellurium of predetermined area
Cadmium mercury film, which is put into the bromine methanol solution of predetermined concentration, to be corroded to predetermined thickness, using the mercury cadmium telluride thin film after corrosion as institute
State pending mercury cadmium telluride thin film.
Optionally, the predetermined concentration is 0.5%.
Optionally, the scope of the predetermined area is 12mm × 12mm to 25mm × 30mm.
Optionally, the mercury cadmium telluride thin film of predetermined area is put into the bromine methanol solution of predetermined concentration and corroded to predetermined thickness
After degree, in addition to：The mercury cadmium telluride thin film surface is cleaned with predetermined washing lotion.
Optionally, after cleaning the mercury cadmium telluride thin film surface with predetermined washing lotion, in addition to：According to predetermined angular with high-purity
Nitrogen gun is blown along the mercury cadmium telluride thin film edge, wherein, the predetermined angular is the High Purity Nitrogen air gun outgassing direction and institute
Mercury cadmium telluride thin film surface is stated into 30 degree to 45 degree of angle.
Optionally, the pending mercury cadmium telluride thin film component is analyzed according to the spectrogram, including：Parsing institute
Spectrogram is stated, obtains multiple peak values；All peak values are substituted into the first predetermined formula successively and obtain taboo corresponding to each peak value
Bandwidth Eg values；Multiple Eg values are substituted into the second predetermined formula respectively to be calculated, to obtain the mercury cadmium telluride thin film
Component.
Optionally, first predetermined formula is Eg=hc/ λ；Second predetermined formula is Eg=-0.302+1.93x+
5.35×10-4T(1-2x)-0.81x2+0.832x3, wherein, T is the predetermined temperature, and λ is the peak value, and h is that Planck is normal
Number, x is component to be measured, and c is the light velocity.
Optionally, the predetermined temperature is 77K.
Optionally, according to the predefined parameter of infrared spectrometer described in predetermined adjustment range regulation, including：Laser power is adjusted
Any value in 80mW to 100mW；Diaphragm button is adjusted to gear 3, gear 5 or gear 6；When measurement pattern is arranged to
Between differentiate step-scan, wherein, the temporal resolution of the time resolution step-scan is set to 50ms；Timeslice number is adjusted to 10
Any value into 30；The cumulative number of single pass is adjusted to any value in 100 times to 300 times；By point of spectrum wave number
Resolution is arranged to 16cm-1Or 32cm-1。
The method of testing of mercury cadmium telluride thin film component provided by the invention, pending mercury cadmium telluride thin film is fixed on sample stage
On, and sample stage is put into the sample chamber of infrared spectrometer；Sample chamber and infrared spectrometer are vacuumized respectively, then will
Sample chamber temperature is down to predetermined temperature；Start infrared spectrometer, according to the predetermined of predetermined adjustment range regulation infrared spectrometer
Parameter, and luminescence generated by light test is carried out to pending mercury cadmium telluride thin film according to the predefined parameter after regulation, to obtain spectrogram,
And pending mercury cadmium telluride thin film component is analyzed according to spectrogram.This method is to thin to mercury cadmium telluride using infrared spectrometer
Film carries out luminescence generated by light test, obtains spectrogram, mercury cadmium telluride thin film component is analyzed according to spectrogram, compared to using light
Learn film analysis software and calculating is fitted to mercury cadmium telluride thin film component, can more quickly and accurately obtain mercury cadmium telluride thin film group
Divide, solve the following problem of prior art：Calculating is fitted to spectrum corresponding to mercury cadmium telluride thin film using software, due to
Need, to some parameter approximations processing, to cause the component accuracy of each layer of mercury cadmium telluride thin film finally given not in calculating process
It is high.
Brief description of the drawings
Fig. 1 is the flow chart of the method for testing of mercury cadmium telluride thin film component in first embodiment of the invention；
Fig. 2 is the flow chart of the method for testing of mercury cadmium telluride thin film component in second embodiment of the invention.
Embodiment
In order to solve the problems, such as that prior art is as follows：Existing mercury cadmium telluride thin film component method of testing, using software to tellurium
Spectrum corresponding to cadmium mercury film is fitted calculating, due to needing, to some parameter approximations processing, to cause in calculating process
The component accuracy of each layer of mercury cadmium telluride thin film finally given is not high；First embodiment of the invention provides a kind of mercury cadmium telluride thin film
The method of testing of component, the flow chart of this method is as shown in figure 1, including step S102 to S106：
S102, pending mercury cadmium telluride thin film is fixed on sample stage, sample stage is put into the sample of infrared spectrometer
In chamber；
S104, the first preset pressure is evacuated to sample chamber, the second preset pressure is evacuated to infrared spectrometer,
Sample chamber temperature is down to predetermined temperature again；
S106, start infrared spectrometer, according to the predefined parameter of predetermined adjustment range regulation infrared spectrometer, and according to tune
Predefined parameter after section carries out luminescence generated by light test to pending mercury cadmium telluride thin film, spectrogram is obtained, with according to spectrogram pair
Pending mercury cadmium telluride thin film component is analyzed.
The mercury cadmium telluride thin film component method of testing that the present embodiment provides, mercury cadmium telluride thin film is put into infrared spectrometer, right
After othermohygrometer environment is defined, luminescence generated by light test is carried out to mercury cadmium telluride thin film, spectrogram is obtained, according to spectrogram to tellurium
Cadmium mercury film composition is analyzed, and calculating is fitted to mercury cadmium telluride thin film component compared to using optical thin film analysis software,
Mercury cadmium telluride thin film component can be more quickly and accurately obtained, the following problem for solving prior art：Existing component test side
Method, calculating is fitted to spectrum corresponding to mercury cadmium telluride thin film using software, due to being needed in calculating process to some parameters
Approximation processing is done, the component accuracy of each layer of mercury cadmium telluride thin film for causing to obtain is not high.
In order to remove the oxide-film on mercury cadmium telluride surface, before mercury cadmium telluride is fixed on sample stage, it is necessary to
Certain processing is carried out to mercury cadmium telluride, concrete mode is：The mercury cadmium telluride thin film that certain surface accumulates is put into certain density
Corrosion is to certain thickness in bromine methanol solution, using the mercury cadmium telluride thin film after corrosion as pending mercury cadmium telluride thin film.
When using bromine methanol solution processing mercury cadmium telluride, the concentration of bromine methanol solution can be defined, at this
In embodiment, bromine concentration of methanol solution can be arranged to 0.5%.The bromine methanol solution of various concentrations corresponds to the corruption of various concentrations
Speed is lost, in specific implementation, the bromine methanol solution of various concentrations according to actual conditions, can be selected.
In order to facilitate operation, the surface area of mercury cadmium telluride thin film material can necessarily be limited, implemented
When, the scope of the surface area of mercury cadmium telluride thin film material can be 12mm × 12mm to 25mm × 30mm any value.
After mercury cadmium telluride thin film material is corroded with bromine methanol solution, certain processing is also carried out to material, so that it is accorded with
Close test condition, in particular to：The mercury cadmium telluride thin film surface is cleaned with predetermined washing lotion.Washing lotion can be methanol or
Other organic or inorganic solution.
After said process, mercury cadmium telluride thin film material is also dried up, its surface is not had residual moisture, detailed process
It is：Blown according to predetermined angular with High Purity Nitrogen air gun along mercury cadmium telluride thin film edge, wherein, predetermined angular is High Purity Nitrogen air gun outlet
Direction and mercury cadmium telluride thin film surface are into 30 degree to 45 degree of angle.Mercury cadmium telluride is dried up using the high pure nitrogen of High Purity Nitrogen air gun blowout
Thin-film material, mercury cadmium telluride thin film material surface can be avoided to be aoxidized once again, and use 30 degree to 45 degree of angle air blowing, can be with
Avoid air blowing angle from crossing ambassador's mercury cadmium telluride thin film material and produce rupture, using aforesaid way, mercury cadmium telluride thin film material can be made to exist
Complete premise is kept to be issued to the requirement of luminescence generated by light test.
The mercury cadmium telluride thin film for carrying out above-mentioned processing is put into infrared spectrometer progress luminescence generated by light test and obtains spectrogram
Afterwards, in order to which the component result of mercury cadmium telluride thin film is calculated, following steps should also be carried out：Spectrogram is parsed, obtains multiple peaks
Value；All peak values are substituted into the first predetermined formula successively and obtain energy gap Eg values corresponding to each peak value；By multiple Eg values point
Do not substitute into the second predetermined formula to be calculated, to obtain the component of mercury cadmium telluride thin film.
When specifically being calculated, the peak value λ that analysis spectrogram obtains is substituted into the first predetermined formula Eg=hc/ λ first
In, wherein, h is Planck's constant, and c is the light velocity, so as to obtain energy gap Eg values corresponding to each peak value；Secondly, will be each
Energy gap Eg values corresponding to peak value substitute into the second predetermined formula Eg=-0.302+1.93x+5.35 × 10-4T(1-2x)-
0.81x2+0.832x3In, T is the predetermined temperature that sample chamber is down to when carrying out luminescence generated by light test, and x is that mercury cadmium telluride to be measured is thin
The component of film, different Eg values correspond to different components.
In order that spectrogram preferably reflects the component of mercury cadmium telluride thin film, luminescence generated by light survey is being carried out using infrared spectrometer
During examination, the temperature of sample chamber can be down to 77K, i.e., the T values in above-mentioned second predetermined formula.
, can be according to predetermined quick and precisely to obtain spectrogram when carrying out luminescence generated by light test using infrared spectrometer
Adjustable range adjusts the predefined parameter of infrared spectrometer, specifically includes：Laser power is adjusted to any in 80mW to 100mW
Value；Diaphragm button is adjusted to gear 3, gear 5 or gear 6；Measurement pattern is arranged to time resolution step-scan, wherein,
The temporal resolution of time resolution step-scan is set to 50ms；Any value timeslice number being adjusted in 10 to 30；To once it sweep
The cumulative number retouched is adjusted to any value in 100 times to 300 times；The resolution ratio of spectrum wave number is arranged to 16cm-1Or 32cm-1。
For example, after infrared spectrometer is started, the laser power of infrared spectrometer can be arranged to 90mW, by diaphragm
Button is adjusted to 5 grades, and measurement pattern is arranged into time resolution stepping surface sweeping, and its temporal resolution is arranged into 50ms, by when
Between piece number be arranged to 20, the cumulative number of single pass is arranged to 180 times, the resolution ratio of spectrum wave number is arranged to 16cm-1。
Above-mentioned setting can quick and precisely obtain the spectrogram of mercury cadmium telluride thin film, accurate so as to the component that ensures to be calculated.
In order to solve following technical problem：Calculating is fitted to spectrum corresponding to mercury cadmium telluride thin film using software, due to
Need, to some parameter approximations processing, to cause the component accuracy of each layer of mercury cadmium telluride thin film finally given in calculating process
It is not high；Second embodiment of the invention provides a kind of method of testing of mercury cadmium telluride thin film component, this method flow chart such as Fig. 2 institutes
Show, including step S202 to S208：
S202, mercury cadmium telluride thin film material is corroded to certain thickness with certain density bromine methanol solution, then to tellurium cadmium
Mercury film carries out cleaning drying, the mercury cadmium telluride thin film after being corroded；
In the present embodiment, mercury cadmium telluride thin film material bromine methanol solution is corroded to certain thickness, the process is specific
Including：Choose mercury cadmium telluride thin film material of one piece of surface area in 12mm × 12mm to 25mm × 30mm；Putting it into concentration is
Corrode 80 to 110 seconds in 0.5% bromine methanol solution；The mercury cadmium telluride thin film is taken out after corrosion, is cleaned with specific washing lotion whole
Individual film surface；Mercury cadmium telluride thin film material is dried up with High Purity Nitrogen air gun after the completion of cleaning, wherein, air blowing should be along mercury cadmium telluride thin film side
Edge and high pure nitrogen outgassing direction and film surface are into 30 to 45 degree angles.
S204, the mercury cadmium telluride thin film after corrosion is fixed on sample stage, sample stage is put into the sample of infrared spectrometer
In chamber, sample chamber and infrared spectrometer are vacuumized respectively, are cooled to sample chamber after default vacuum to be achieved
Predetermined temperature；
In specific implementation, said process specifically includes：The material of mercury cadmium telluride thin film is lain on sample stage up,
It is fixed with screw, then sample stage is put into the sample chamber of infrared spectrometer；By infrared spectrometer and sample chamber
It is evacuated to after reaching predetermined vacuum level, refrigerating plant is accessed into sample chamber, is 77K by refrigerating plant temperature setting, so
Refrigerating plant is opened afterwards to cool to sample chamber.
S206, infrared spectrometer is opened, the predefined parameter of infrared spectrometer is adjusted by predetermined adjustable range, to mercury cadmium telluride
Film carries out luminescence generated by light test, obtains spectrogram；
In the present embodiment, by predetermined adjustable range adjust infrared spectrometer predefined parameter, in particular to：By laser
Power is adjusted to 80mW to 100mW any values；Diaphragm gear selection 3 or 5 or 6；Using time resolution step-scan mode, at that time
Between resolution ratio be arranged to 50ms；Any value during timeslice number is arranged to 10 to 30；Cumulative frequency is any in being arranged to 100 to 300
Value；The resolution ratio of spectrum wave number is set to 16cm-1Or 32cm-1。
S208, analysis spectrogram obtain multiple peak values, and peak value is substituted into formula obtains Eg values corresponding to each peak value, will be each
Individual Eg values substitute into fixed empirical equation, obtain the component of mercury cadmium telluride thin film material.
In the present embodiment, the peak value obtained according to analysis spectrogram obtains the component of mercury cadmium telluride thin film material, specific mistake
Cheng Shi：Obtain peak value corresponding to each peak on spectrogram, the Eg according to corresponding to formula Eg=hc/ λ calculate each peak value respectively
Value, wherein, h is Planck's constant, and c is the light velocity, and λ is peak value；Then each Eg values point obtained will be calculated according to above-mentioned formula
Dai Ru not empirical equation Eg=-0.302+1.93x+5.35 × 10-4T (1-2x) -0.81x2+0.832x3, calculate successively double-colored
The component x of each layer of mercury cadmium telluride thin film, wherein, T is the temperature that sample chamber is down to, and T takes 77K in the present embodiment.
Below by way of example, the present embodiment is specifically described.
Example 1
The mercury cadmium telluride thin film material that one piece of surface area is 12mm × 12mm is chosen, the material then is put into concentration is
Corrode 80 seconds in 0.5% bromine methanol solution；The mercury cadmium telluride thin film is taken out after corrosion, whole film table is cleaned with methanol
Face；Blown after the completion of cleaning with High Purity Nitrogen air gun along film edge, outgassing direction and film surface are into 30 degree of angles, after corrosion
Mercury cadmium telluride thin film material dries up.
The material of mercury cadmium telluride thin film after drying is lain on sample stage up, is fixed with screw, then will
Sample stage is put into the sample chamber of infrared spectrometer；Default vacuum is evacuated to respectively to infrared spectrometer and sample chamber
After degree, refrigerating plant is linked into sample chamber, predetermined temperature is arranged to 77K, is then turned on refrigerating plant to sample cavity
Room is cooled.
Sample chamber temperature stabilization starts infrared spectrometer, laser power is adjusted into 100mW, diaphragm gear after 77K
Selection 3, scan mode selection time differentiate step-scan, the temporal resolution of time resolution step-scan be arranged to 50ms, when
Between piece number be arranged to 10, cumulative frequency and be set to the 300, resolution ratio of spectrum wave number to be set to 16cm-1, after above-mentioned be provided with, adopt
Luminescence generated by light test is carried out to mercury cadmium telluride thin film with infrared spectrometer.
The result that above-mentioned test obtains is spectrogram, and spectrogram is analyzed, and obtains multiple peak values on spectrogram, peak value
For wavelength corresponding to laser energy maximum, the Eg values according to corresponding to formula Eg=hc/ λ calculate each peak value respectively, at this
In example, Eg unit is electron-volt eV；Each Eg values of acquisition are substituted into empirical equation Eg=-0.302+1.93x+ respectively
5.35×10-4T(1-2x)-0.81x2+0.832x3, then T=77K is substituted into, the group of each layer of two-color HgCdTe film is calculated successively
Divide x.
Example 2
The mercury cadmium telluride thin film material that one piece of surface area is 21mm × 25mm is chosen, it is 0.5% that the material is put into concentration
Corrode 108 seconds in bromine methanol solution；The mercury cadmium telluride thin film is taken out after corrosion, whole film surface is cleaned with methanol；Cleaning
After the completion of mercury cadmium telluride thin film is dried up along mercury cadmium telluride thin film edge with High Purity Nitrogen air gun, wherein, High Purity Nitrogen air gun outgassing direction with
Film surface is into 40 degree of angles.
The material of mercury cadmium telluride thin film after drying is lain on sample stage up, is put into sample stage after being fixed
The sample chamber of infrared spectrometer；Infrared spectrometer and sample chamber are vacuumized respectively, it is predetermined true to treat that vacuum is extracted into satisfaction
After reciprocal of duty cycle, refrigerating plant is linked into sample chamber, refrigerating plant is opened, the temperature of sample chamber is down to 77K.
The temperature stabilization of sample chamber opens infrared spectrometer after 77K, and the parameter setting of infrared spectrometer is as follows：Swash
Luminous power is arranged to 90mW, diaphragm gear selection 6, is arranged to using time resolution step-scan mode, its temporal resolution
50ms, timeslice number are arranged to 25, and cumulative frequency is arranged to 215, and the resolution ratio of spectrum wave number is arranged to 32cm-1, set above-mentioned
After the completion of putting, luminescence generated by light test is carried out to mercury cadmium telluride thin film using infrared spectrometer.
In the present embodiment, mercury cadmium telluride thin film luminescence generated by light is tested to obtain is spectrogram, and the spectrogram is divided
Analysis, obtains spectrally several peak values, is the wavelength of the laser energy maximum laser corresponding to peak value, according to formula Eg=
Hc/ λ calculate Eg values corresponding to each peak value respectively, and in this example, Eg unit is electron-volt eV；Then by acquisition
Each Eg values substitute into empirical equation Eg=-0.302+1.93x+5.35 × 10-4T (1-2x) -0.81x respectively2+0.832x3, then generation
Enter T=77K, calculate the component x of each layer of two-color HgCdTe film successively.
The mercury cadmium telluride thin film component method of testing that second embodiment of the invention provides, the mercury cadmium telluride thin film that certain surface is accumulated
Material is corroded, and drying is cleaned after corroding to certain thickness；Mercury cadmium telluride thin film after corrosion is fixed on sample stage,
And sample stage is put into the sample chamber of infrared spectrometer；Sample chamber and infrared spectrometer are vacuumized respectively, then by sample
Product chamber temp is down to predetermined temperature；Start infrared spectrometer, according to the predetermined ginseng of predetermined adjustment range regulation infrared spectrometer
Number, and luminescence generated by light test is carried out to pending mercury cadmium telluride thin film according to the predefined parameter after regulation, to obtain spectrogram, and
Pending mercury cadmium telluride thin film component is analyzed according to spectrogram.This method is to using infrared spectrometer to mercury cadmium telluride thin film
Luminescence generated by light test is carried out, spectrogram is obtained, mercury cadmium telluride thin film component is analyzed according to spectrogram, compared to using optics
Film analysis software is fitted calculating to mercury cadmium telluride thin film component, can more quickly and accurately obtain mercury cadmium telluride thin film component,
Solves the following problem of prior art：Calculating is fitted to spectrum corresponding to mercury cadmium telluride thin film using software, due to counting
Need, to some parameter approximations processing, to cause the component accuracy of each layer of mercury cadmium telluride thin film finally given not during calculation
It is high.
The method of testing of mercury cadmium telluride thin film material component provided in an embodiment of the present invention, it can rapidly and accurately obtain tellurium cadmium
Mercury thin-film material component is formed, and provides reference for the optimization of the epitaxial growth technology of mercury cadmium telluride thin film material, and then make tellurium cadmium
The quality of mercury thin-film material has obtained effective control and raising.
Although being example purpose, the preferred embodiments of the present invention are had been disclosed for, those skilled in the art will recognize
Various improvement, increase and substitution are also possible, and therefore, the scope of the present invention should be not limited to above-described embodiment.
Claims (10)
- A kind of 1. method of testing of mercury cadmium telluride thin film component, it is characterised in that including：Pending mercury cadmium telluride thin film is fixed on sample stage, the sample stage is put into the sample chamber of infrared spectrometer In；First preset pressure is evacuated to the sample chamber, the second preset pressure is evacuated to the infrared spectrometer, The sample chamber temperature is down to predetermined temperature again；Start the infrared spectrometer, according to the predefined parameter of infrared spectrometer described in predetermined adjustment range regulation, and according to tune Predefined parameter after section carries out luminescence generated by light test to the pending mercury cadmium telluride thin film, spectrogram is obtained, with according to Spectrogram is analyzed the pending mercury cadmium telluride thin film component.
- 2. method of testing as claimed in claim 1, it is characterised in that pending mercury cadmium telluride thin film is fixed on sample stage Before, in addition to：The mercury cadmium telluride thin film of predetermined area is put into corrosion in the bromine methanol solution of predetermined concentration, will corrosion to predetermined thickness Mercury cadmium telluride thin film afterwards is as the pending mercury cadmium telluride thin film.
- 3. method of testing as claimed in claim 2, it is characterised in that the predetermined concentration is 0.5%.
- 4. method of testing as claimed in claim 2, it is characterised in that the scope of the predetermined area be 12mm × 12mm extremely 25mm×30mm。
- 5. method of testing as claimed in claim 2, it is characterised in that be put into the mercury cadmium telluride thin film of predetermined area predetermined dense In the bromine methanol solution of degree after corrosion to predetermined thickness, in addition to：The mercury cadmium telluride thin film surface is cleaned with predetermined washing lotion.
- 6. method of testing as claimed in claim 5, it is characterised in that with predetermined washing lotion clean the mercury cadmium telluride thin film surface it Afterwards, in addition to：Blown according to predetermined angular with High Purity Nitrogen air gun along the mercury cadmium telluride thin film edge, wherein, the predetermined angular is described High Purity Nitrogen air gun outgassing direction and the mercury cadmium telluride thin film surface are into 30 degree to 45 degree of angle.
- 7. method of testing as claimed in claim 1, it is characterised in that according to the spectrogram to the pending mercury cadmium telluride Film composition is analyzed, including：The spectrogram is parsed, obtains multiple peak values；All peak values are substituted into the first predetermined formula successively and obtain energy gap Eg values corresponding to each peak value；Multiple Eg values are substituted into the second predetermined formula respectively to be calculated, to obtain the component of the mercury cadmium telluride thin film.
- 8. method of testing as claimed in claim 7, it is characterised in thatFirst predetermined formula is Eg=hc/ λ；Second predetermined formula is Eg=-0.302+1.93x+5.35 × 10-4T(1-2x)-0.81x2+0.832x3, wherein, T For the predetermined temperature, λ is the peak value, and h is Planck's constant, and x is component to be measured, and c is the light velocity.
- 9. the method for testing as any one of claim 1 to 8, it is characterised in that the predetermined temperature is 77K.
- 10. the method for testing as any one of claim 1 to 8, it is characterised in that according to predetermined adjustment range regulation institute The predefined parameter of infrared spectrometer is stated, including：Laser power is adjusted to any value in 80mW to 100mW；Diaphragm button is adjusted to gear 3, gear 5 or gear 6；Measurement pattern is arranged to time resolution step-scan, wherein, the temporal resolution of the time resolution step-scan is set For 50ms；Any value timeslice number being adjusted in 10 to 30；The cumulative number of single pass is adjusted to any value in 100 times to 300 times；The resolution ratio of spectrum wave number is arranged to 16cm-1Or 32cm-1。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108872104A (en) * | 2018-06-12 | 2018-11-23 | 中国科学院上海技术物理研究所 | A kind of test method of mercury cadmium telluride thin film component gradient distribution |
| CN110243779A (en) * | 2019-05-17 | 2019-09-17 | 中国科学院上海技术物理研究所 | A kind of calculation method of HgCdTe infrared focal plane detector response spectrum |
| CN112014359A (en) * | 2020-08-27 | 2020-12-01 | 中国电子科技集团公司第十一研究所 | Indium-arsenic-antimony component determination method and device |
| CN113702322A (en) * | 2021-08-04 | 2021-11-26 | 中国电子科技集团公司第十一研究所 | Method and device for calculating impurity energy level of tellurium-zinc-cadmium-based tellurium-cadmium-mercury material |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108872104A (en) * | 2018-06-12 | 2018-11-23 | 中国科学院上海技术物理研究所 | A kind of test method of mercury cadmium telluride thin film component gradient distribution |
| CN110243779A (en) * | 2019-05-17 | 2019-09-17 | 中国科学院上海技术物理研究所 | A kind of calculation method of HgCdTe infrared focal plane detector response spectrum |
| CN110243779B (en) * | 2019-05-17 | 2021-08-06 | 中国科学院上海技术物理研究所 | Method for calculating response spectrum of mercury cadmium telluride infrared focal plane detector |
| CN112014359A (en) * | 2020-08-27 | 2020-12-01 | 中国电子科技集团公司第十一研究所 | Indium-arsenic-antimony component determination method and device |
| CN112014359B (en) * | 2020-08-27 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | Method and device for determining indium, arsenic and antimony components |
| CN113702322A (en) * | 2021-08-04 | 2021-11-26 | 中国电子科技集团公司第十一研究所 | Method and device for calculating impurity energy level of tellurium-zinc-cadmium-based tellurium-cadmium-mercury material |
| CN113702322B (en) * | 2021-08-04 | 2023-10-24 | 中国电子科技集团公司第十一研究所 | Method and equipment for calculating impurity energy level of tellurium-zinc-cadmium-based tellurium-cadmium-mercury material |
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