CN107562175A - It is a kind of to reduce the method and device that MOSFET is lost in warm connection function module - Google Patents
It is a kind of to reduce the method and device that MOSFET is lost in warm connection function module Download PDFInfo
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- CN107562175A CN107562175A CN201710797139.7A CN201710797139A CN107562175A CN 107562175 A CN107562175 A CN 107562175A CN 201710797139 A CN201710797139 A CN 201710797139A CN 107562175 A CN107562175 A CN 107562175A
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Abstract
A kind of to reduce the method that MOSFET is lost in warm connection function module, by Q1, Q2, Q3, totally 3 road MOSFET paths are lost to reduce MOSFET；Specifically include：In the transient switching Q3MOSFET paths of power-on and power-off, Q1MOSFET paths and Q2MOSFET paths are closed；In normal work, Q3MOSFET paths are closed, turn on Q1MOSFET paths and Q2MOSFET paths.Also include a kind of device for reducing MOSFET losses in warm connection function module.In the case where not influenceing basic warm connection function, reduce hot plug MOSFET losses, and increased MOSFET design cost can be ignored substantially, so as to improve the power consumption performance of server and reduce the cost of server.
Description
Technical field
It is specifically a kind of to reduce in warm connection function module the present invention relates to system power dissipation technical field is reduced
The method and device of MOSFET losses.
Background technology
With raisings of the server CPU to operational performance, its power requirement is also increasing, and what is brought therewith is exactly each
The power of server node is increasing.The server energy consumption of present main flow Purley platform single nodes has been above 800W, and
The power consumption of follow-on server node is greater than 1000W.This for support warm connection function Cabinet-type server and blade
For formula server, MOSFET (the metal oxide layer semiconductcor field effect crystal in the warm connection function module of node input
Pipe) loss to power consumption is increasing.The power loss of warm connection function module mostlys come from its MOSFET conduction loss,
Both the transmission loss that MOSFET Rdson (resistance when being turned between MOSFET drain D and source S between D, S) is brought.
Although selecting the small MOSFET of Rdson as far as possible in MOSFET type selectings, warm connection function module
MOSFET selection when also to pay the utmost attention to its SOA (Services Oriented Achitecture) parameter, otherwise in hot plug electricity and fall
Electric moment, it is possible to cause MOSFET damages or even burns beyond MOSFET SOA curves.And the MOSFET that SOA curves are good
Its Rdson be all difficult accomplish it is too small, as present main flow MOSFET in do not consider SOA curves, its Rdson can accomplish 0.5 milli
Below Europe, and if to take into account good SOA curves, then selectable Rdson is more more than 1.5 milliohms, to the work(of server
Consumption brings huge loss.
Server belongs to high-power, the equipment uninterruptedly used, especially sensitive to system power dissipation, in big server demands
In the bid of business, server energy consumption often increases 1W, and bid price will reduce by more than 100 yuan, and cost is heavy.
The content of the invention
The method and device that MOSFET is lost in warm connection function module is reduced it is an object of the invention to provide a kind of, is used
It is big in solving the problems, such as MOSFET in conductive process and being lost.
The technical scheme adopted by the invention to solve the technical problem is that：One kind reduces MOSFET in warm connection function module
The method of loss, by Q1, Q2, Q3, totally 3 road MOSFET paths are lost to reduce MOSFET；Specifically include：In the wink of power-on and power-off
Between turn on Q3MOSFET paths, close Q1MOSFET paths and Q2MOSFET paths；In normal work, close Q3MOSFET and lead to
Road, turn on Q1MOSFET paths and Q2MOSFET paths.
Further, specifically included in the method for the transient switching Q3MOSFET paths of power-on and power-off：
If the vdd voltage detected is higher than VDD predeterminated voltage, the controller control of warm connection function module
Q3MOSFET paths turn on；
If the VOUT voltages detected are less than VOUT predeterminated voltage, the controller control of warm connection function module
Q3MOSFET paths turn on.
Further, the mode that Q1MOSFET paths and Q2MOSFET paths are turned in normal work specifically includes：
In time rating after the conducting of Q3MOSFET paths, the controller control of warm connection function module is closed
Q3MOSFET paths, turn on Q1MOSFET paths and Q2MOSFET paths.
Further, need to set preset time before Q3MOSFET paths are closed, after preset time terminates,
Q3MOSFET path blockades, simultaneously turn on Q1MOSFET paths and Q2MOSFET paths.
Further, in addition to set Q3 Rdson values be high Rdson values, setting Q1 and Q2 Rdson values be it is low
Rdson values.
A kind of device for reducing MOSFET losses in warm connection function module, including the controller of warm connection function module,
Q1MOSFET, Q2MOSFET, resistance R1, resistance R2；Also include Q3MOSFET；Described Q1MOSFET G poles and Q2MOSFET
G extremely be connected and be connected with the controller GATE2 pins of warm connection function module, Q1MOSFET S poles and Q2MOSFET S poles
It is connected and is connected with the controller VOUT pins of warm connection function module；Q1MOSFET D poles are extremely connected simultaneously with Q2MOSFET D
It is connected with the controller SENSE- pins of warm connection function module；Q1MOSFET D poles are connected with resistance R1 one end,
Q2MOSFET D poles are connected with resistance R2 one end；The resistance R1 other end is connected with the resistance R2 other end and and hot plug
The controller VDD pins of functional module are connected with SENSE+；Q3MOSFET G poles are connected with the GATE1 pins of controller,
Q3MOSFET S poles are extremely connected with Q1MOSFET S, and Q3MOSFET D poles are extremely connected with Q1MOSFET D.
Further, Q1MOSFET and Q2MOSFET Rdson is low Rdson, and Q3MOSFET Rdson is high Rdson.
What the above content of the invention provided is only the statement of the embodiment of the present invention, rather than invention is in itself.
The effect provided in the content of the invention is only the effect of embodiment, rather than whole effects that invention is all, above-mentioned
A technical scheme in technical scheme has the following advantages that or beneficial effect：
In the case where not influenceing basic warm connection function, reduce hot plug MOSFET losses, and increased one
MOSFET design cost can be ignored substantially, so as to improve the power consumption performance of server and reduce server
Cost.
Brief description of the drawings
Fig. 1 is the connection diagram of current warm connection function module；
Fig. 2 is the method flow schematic diagram of the embodiment of the present invention；
Fig. 3 is the structure connection diagram of the embodiment of the present invention.
Embodiment
In order to the technical characterstic of clear explanation this programme, below by embodiment, and its accompanying drawing is combined, to this
Invention is described in detail.Following disclosure provides many different embodiments or example is used for realizing the different knots of the present invention
Structure.In order to simplify disclosure of the invention, hereinafter the part and setting of specific examples are described.In addition, the present invention can be with
Repeat reference numerals and/or letter in different examples.This repetition is that for purposes of simplicity and clarity, itself is not indicated
Relation between various embodiments are discussed and/or set.It should be noted that part illustrated in the accompanying drawings is not necessarily to scale
Draw.Present invention omits the description to known assemblies and treatment technology and process to avoid being unnecessarily limiting the present invention.
It is the description to prior art below to be better understood from the present invention.
The MOSFET selected to take into account hot plug in upper electricity and the SOA demands of power down moment, functional module is led
Logical impedance (Rdson) 1.5m Ω scheme realizes, as shown in Figure 1.
Inputted from VIN, VOUT outputs, the middle monitoring by 0.5m Ω precision resistance realization to hot plug electric current, Q1,
Q2 is MOSFET, and hot-swapping controller is realized to VOUT and its back end of line by controlling the time that MOSFET selection conductings are opened
The protection on road, prevent the generation of hot plug moment big surge current voltage.
By taking server use as an example, in hot plug moment, MOSFET VDS voltages are 12V, and at this time MOSFET is to SOA
Curve requirement must is fulfilled for, and otherwise will result in MOSFET infringement.After MOSFET normallies, VDS voltages close to 0V, this
When SOA curves be not bottleneck, and it is fully on after the conduction loss as caused by Rdson be then a very big loss point.
It is in parallel using two groups of MOSFET to meet excellent SOA curves and good Rdson requirements, but too much
Parallel connection, the problem of the difference and the Miller effect of the monomer performance for being limited to MOSFET, this problem can not be fully solved, on the contrary
Burning for single MOSFET may be caused.
Two MOSFET parallel connections are existing frequently-used modes, and 2 are exactly the limit.And with 2 MOSFET parallel connections, node power
Exemplified by 840W, input voltage 12V, MOSFET conducting power consumption is 3.675W when can calculate normal work.If the next generation arrives
1200W, then MOSFET conducting power consumption is 7.5W.It can be seen that with the lifting of server power, in hot plug power consumption module
MOSFET loss is increasing.
In order to reduce MOSFET loss, reduce what MOSFET in warm connection function module was lost the invention provides a kind of
Method and device.
It is a kind of to reduce the method that MOSFET is lost in warm connection function module, pass through Q1, Q2, Q3 totally 3 road MOSFET paths
To reduce MOSFET losses；As shown in Fig. 2 specifically include：
Step 1) detection vdd voltage whether be higher than VDD predeterminated voltage, if it is, perform step 2) operation, otherwise after
It is continuous to perform step 1)；
The controller control Q3MOSFET paths conducting of step 2) warm connection function module, control Q1MOSFET paths and
Q2MOSFET path blockades；
Step 3) controller control Q3MOSFET path blockades, controls Q1MOSFET after defined preset time terminates
Path and the conducting of Q2MOSFET paths；
Whether step 4) detection VOUT voltages are less than VOUT predeterminated voltage, if it is, performing step 5) operation, otherwise
Continue executing with step 4)；
The controller control Q3MOSFET paths conducting of step 5) warm connection function module, control Q1MOSFET paths and
Q2MOSFET path blockades；
Step 6) controller control Q3MOSFET path blockades, can continue executing with step after defined preset time terminates
It is rapid 1) to operate.
Q3 Rdson values are high Rdson values, and the Rdson values for setting Q1 and Q2 are low Rdson values.
Above step realizes the transient switching Q3MOSFET paths in power-on and power-off, close Q1MOSFET paths and
Q2MOSFET paths；In normal work, Q3MOSFET paths are closed, turn on Q1MOSFET paths and Q2MOSFET paths.And
Preferentially meet SOA high to MOSFET requirement in power-on and power-off moment, and then preferentially meet in normally low to MOSFET
Rdson requirement, so as to reduce the power consumption penalty of MOSFET in warm connection function module.
As shown in figure 3, a kind of reduce the device that MOSFET is lost in warm connection function module, on the basis designed originally
On, increase a control signal GATE1 in hot-swapping controller and be extremely connected with newly increasing Q3 (Rdson=2m Ω) G.Q3 choosing
Select using SOA as optimal selection key element, do not consider Rdson parameters, it is ensured that Q3 meets that the SOA of whole hot plug power-on and power-off moment will
Ask.
Controller, Q1MOSFET, Q2MOSFET, resistance R1, resistance R2 including warm connection function module；Also include
Q3MOSFET；Described Q1MOSFET G poles be extremely connected with Q2MOSFET G and with the controller of warm connection function module
GATE2 pins are connected, Q1MOSFET S poles be extremely connected with Q2MOSFET S and with the controller VOUT of warm connection function module
Pin is connected；Q1MOSFET D poles be extremely connected with Q2MOSFET D and with the controller SENSE- pins of warm connection function module
It is connected；Q1MOSFET D poles are connected with resistance R1 one end, and Q2MOSFET D poles are connected with resistance R2 one end；Resistance R1's
The other end is connected with the resistance R2 other end and is connected with the controller VDD pins and SENSE+ of warm connection function module；
Q3MOSFET G poles are connected with the GATE1 pins of controller, and Q3MOSFET S poles are extremely connected with Q1MOSFET S,
Q3MOSFET D poles are extremely connected with Q1MOSFET D.
In order to preferentially meet SOA high to MOSFET requirement in power-on and power-off moment, and then preferentially meet in normally
Rdson low to MOSFET requirement, reduces the power consumption penalty of MOSFET in warm connection function module, set Q1MOSFET and
Q2MOSFET Rdson is low Rdson, and Q3MOSFET Rdson is high Rdson.
Simply the preferred embodiment of the present invention described above, for those skilled in the art,
Without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also regarded as this hair
Bright protection domain.
Claims (7)
1. a kind of reduce the method that MOSFET is lost in warm connection function module, it is characterized in that, pass through Q1, Q2, Q3 totally 3 tunnel
MOSFET paths are lost to reduce MOSFET；Specifically include：In the transient switching Q3MOSFET paths of power-on and power-off, close
Q1MOSFET paths and Q2MOSFET paths；In normal work, close Q3MOSFET paths, conducting Q1MOSFET paths and
Q2MOSFET paths.
2. according to the method for claim 1, it is characterized in that, have in the method for the transient switching Q3MOSFET paths of power-on and power-off
Body includes：
If the vdd voltage detected is higher than VDD predeterminated voltage, the controller control Q3MOSFET of warm connection function module
Path turns on；
If the VOUT voltages detected are less than VOUT predeterminated voltage, the controller control of warm connection function module
Q3MOSFET paths turn on.
3. according to the method for claim 1, it is characterized in that, turn on Q1MOSFET paths in normal work and Q2MOSFET leads to
The mode on road specifically includes：
In time rating after the conducting of Q3MOSFET paths, the controller control closing Q3MOSFET of warm connection function module leads to
Road, turn on Q1MOSFET paths and Q2MOSFET paths.
4. according to the method for claim 1, it is characterized in that, need to set preset time before Q3MOSFET paths are closed,
After preset time terminates, Q3MOSFET path blockades, Q1MOSFET paths and Q2MOSFET paths are simultaneously turned on.
5. the method according to claim 11, it is characterized in that, in addition to setting Q3 Rdson values are high Rdson values, are set
Q1 and Q2 Rdson values are low Rdson values.
6. a kind of device for reducing MOSFET losses in warm connection function module, including the controller of warm connection function module,
Q1MOSFET, Q2MOSFET, resistance R1, resistance R2；It is characterized in that in addition to Q3MOSFET；Described Q1MOSFET G poles with
Q2MOSFET G extremely be connected and be connected with the controller GATE2 pins of warm connection function module, Q1MOSFET S poles with
Q2MOSFET S is extremely connected and is connected with the controller VOUT pins of warm connection function module；Q1MOSFET D poles with
Q2MOSFET D is extremely connected and is connected with the controller SENSE- pins of warm connection function module；Q1MOSFET D poles and resistance
R1 one end is connected, and Q2MOSFET D poles are connected with resistance R2 one end；The other end phase of the resistance R1 other end and resistance R2
It is connected even and with the controller VDD pins and SENSE+ of warm connection function module；Q3MOSFET G poles and the GATE1 of controller
Pin is connected, and Q3MOSFET S poles are extremely connected with Q1MOSFET S, and Q3MOSFET D poles are extremely connected with Q1MOSFET D.
7. it is according to claim 6, it is characterized in that, Q1MOSFET and Q2MOSFET Rdson are low Rdson,
Q3MOSFET Rdson is high Rdson.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710797139.7A CN107562175A (en) | 2017-09-06 | 2017-09-06 | It is a kind of to reduce the method and device that MOSFET is lost in warm connection function module |
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| CN201710797139.7A CN107562175A (en) | 2017-09-06 | 2017-09-06 | It is a kind of to reduce the method and device that MOSFET is lost in warm connection function module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111181128A (en) * | 2020-02-16 | 2020-05-19 | 苏州浪潮智能科技有限公司 | Protection circuit based on e-fuse chip |
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