CN107533950B - 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 - Google Patents

用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 Download PDF

Info

Publication number
CN107533950B
CN107533950B CN201680023159.2A CN201680023159A CN107533950B CN 107533950 B CN107533950 B CN 107533950B CN 201680023159 A CN201680023159 A CN 201680023159A CN 107533950 B CN107533950 B CN 107533950B
Authority
CN
China
Prior art keywords
layer
metal
matrix
inorganic
agglomerates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680023159.2A
Other languages
English (en)
Other versions
CN107533950A (zh
Inventor
帕特里克·林德
丹尼尔·林德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dynamic Solar Systems AG
Original Assignee
Dynamic Solar Systems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dynamic Solar Systems AG filed Critical Dynamic Solar Systems AG
Publication of CN107533950A publication Critical patent/CN107533950A/zh
Application granted granted Critical
Publication of CN107533950B publication Critical patent/CN107533950B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2004Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2004Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009Solid electrolytes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02601Nanoparticles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2095Light-sensitive devices comprising a flexible sustrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Nanotechnology (AREA)
  • Sustainable Energy (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Electroluminescent Light Sources (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

根据现有技术的方法总是要求在升高的温度下的烧结步骤,并且这被认为是有问题的。另外,有问题的是柔性薄层(特别是PV层)往往不能经受这样的温度,并且此外不允许利用工业废热和/或长波光子。这个问题可以使用以下方法解决,其中在固化过程中的另外的反应加速并改进固化。在特别有利的实施例中,具有在其中提供有连续金属颗粒和在上层中的碱溶性硅氧烷部分和金属颗粒的塑料基质的双层序列允许通过在碱溶解期间的组合最终固化来生产可以光伏利用工业废热/长波IR辐射的PV层序列。积极开发工业废热/热/体热在许多领域中提供了明显的、经济上可行的优势。

Description

用于生产电工薄层的室温方法及按照所述方法获得的薄层 序列
技术领域
本发明可以总体上被分类在电工薄层领域。该技术领域在涉及诸位发明人的DE10 2015 102 801中有用地概述。可以从本申请和在此引用的现有技术识别出已知的措施、特征和方法。总体而言,已知所讨论的具有微米范围厚度并且可以在可移动的可折叠的并且可弯曲的载体上灵活地携带的类型的层。因此,AT 36002 E(巴斯夫公司(BASF Corp.)的公开号0 119 051 B2)披露了合适的丙烯酸酯基涂层,其可以用作柔性基材的覆盖物。由本文件可辨识出用于生产这些层的典型的成分、特性和措施。
背景技术
本发明涉及用于生产电工薄层、特别是电工PV层序列的方法。
PV层序列长期以来一直是研究和开发的主题。适当焊接包装并且接触并且还安排在用于大面积发电的太阳能工厂户外的单晶和多晶Si电池是相关技术领域中已确立的产品实例。问题是这些传统电池是刚性的,而且相当非柔性的。在面上延伸的板必须始终在水平面中朝向太阳的位置定向,以确保最佳产率。提供从导电层和开关层通过PV层到覆盖层和保护层携带运送电工薄层的柔性薄层***在这里开始起作用。本申请人在该特定领域是活跃的,并且本申请要求一种用于生产此类层和层复合物的方法以及根据该方法获得的层序列。
所讨论类型的层和PV层序列的保护层和导电层自然是导电和/或柔性的。例如在DE 198 15 291 B4和其中引用的现有技术中披露了适当的导电层和保护层。
所建立的PV导电层和用于生产此类PV层复合物的方法在DE 199 46 712 A1中披露。缺点是存在的溶剂和烧结反应性物质要求150℃或更高的温度以便能够在最终的热固结期间被完全去除;在实际的产品实例中,在此最终的热固结是在450℃下进行的。
鉴于这些问题,EP 2 119 747 B1提出了进行可以通过高反应性金属纳米颗粒在约100℃下烧结以提供不间断的导体轨道的银组合物。然而,即使这种措施不能使得可能在基材上生产电工薄层、特别是PV层序列,而无需烧结步骤:始终必需的是将印刷的薄层加热至约100℃(在示例性实施例中130℃)的烧结温度。
因而,通过本发明解决的问题是克服现有技术的缺点并且提供一种方法以及根据该方法的一种电工薄层,该方法尽管工业过程方案和大的表面积制造可以在不加热至烧结温度下提供是固体的、稳定的并且在其电工技术特性上几乎100%可逆的薄层。
该问题的解决方案根据本文所述的特征实现。由以下描述可识别出有利的实施例。
发明内容
根据本发明,用于生产电工的薄层的室温方法(其中以分散体在面上提供导电和/或半导体的无机附聚物并且硬化以提供层)提供了在室温下进行硬化,并且通过暴露于至少一种试剂加速硬化。
一种根据该方法获得并且作为PV层序列获得的电工薄层序列的特征在于,该薄层序列包括玻璃载体,包括施加在该玻璃载体顶上的电极层,包括施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,包括施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机附聚物的至少部分碱溶解的铝颗粒,包括施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
根据本发明,用于生产电工的薄层的室温方法(其中以分散体在面上提供导电和/或半导体的无机附聚物并且硬化以提供一个层)的特征在于在室温下进行硬化,并且通过暴露于至少一种试剂加速硬化。
优选地,该方法的特征在于,形成PV层序列。
优选地,该方法的特征在于,施加作为至少一个基层的包含至少一种金属或金属化合物的层,其中该至少一种金属或其化合物选自下组,该组由以下项组成:钢、锌、锡、银、铜、铝、镍、铅、铁。
优选地,该方法的特征在于,施加并且至少部分硬化作为导电基层的至少一个金属导电和/或半导体层。
优选地,该方法的特征在于,作为载体,使用在面上延伸的材料网,该材料网由至少一种选自以下材料组的材料组成,该组由以下项组成:玻璃、塑料、聚碳酸酯、塑料膜、金属合金、电机块合金、换热器管合金、换热器合金、换热器焊接合金、陶瓷、工业陶瓷、天然石、大理石、粘土陶瓷、屋顶瓦陶瓷、层压木材、地板材料、铝、楼梯铝合金、印刷电路板复合物、集成电路外壳材料、处理器外壳化合物。
优选地,该方法的特征在于,第一层的无机附聚物是分布在塑料基质中的金属或金属化合物,这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
优选地,该方法的特征在于,第二层的无机附聚物是被安排分布在至少部分无机基质中的金属或金属化合物,其中这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆。
优选地,该方法的特征在于,在作为无机基质的层中,使用包含作为该玻璃状氧化基质的至少一种链形成或改性元件的基质,该元件选自下组,该组由以下项组成:硼、磷、硅、砷、硫、硒、碲、无定形形式的碳、石墨改性的碳、碳纳米管形式的碳、多壁碳纳米管形式的碳、巴明敏斯特(Buckminster)富勒烯形式的碳、钙、钠、铝、铅、镁、钡、钾、锰、锌、锡、锑、铈、锆、钛、锶、镧、钍、钇、氟、氯、溴、碘。
优选地,该方法的特征在于
-将导电电极层施加在载体顶上,
-将分布在塑料基质中的金属或金属化合物作为第一层中的无机附聚物施加在电极层顶上,
-将至少部分强碱性或强酸性氧化基质中的无机金属附聚物的第二层施加在第一层顶上,其中
-在施加和硬化期间,这些金属附聚物与该强酸性或碱性基质反应,其中该基质还进而与该第一层的金属附聚物反应,
-在硬化和反应期间,形成光伏活性结,
-该第二层设置有透明覆盖电极和/或接触电极,并且
-适当地接触该光伏活性层序列并且焊接包装为PV层序列。
附图说明
附图参照原则草图展示了:
图1,包含在顶面上的塑料基质的PV双层的SEM平面图,该塑料基质包含硅氧烷部分以及被携带并且部分溶解在其中的Al片,该PV双层被施加并且硬化在包含相同Al片的纯的预硬化的塑料基质的顶上;
图2,根据图1的SEM图像的放大部分;
图3,根据图1和2的PV双层的底面的SEM图像;
图4a,由PV双层测量光伏分接(tappable)电位,其可以仅由围绕PV双层放置的热水产生,作为从46℃降至31℃的水/电池的温度的函数,表明起始值、变化和相应的最终值;
图4b,作为根据所提供的现有技术的波长的函数的在空气中的H2O的光吸收最大值,用于阐明图4a所示的行为。
具体实施方式
在有利的实施例中,通过根据本发明的方法作为PV层序列获得的电工薄层序列的特征在于,该薄层序列
-包括玻璃载体,
-包括施加在该玻璃载体顶上的电极层,该电极层包括银,
-包括施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,
-包括施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机附聚物的至少部分碱溶解的铝颗粒,
-包括施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而
-如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
在另一个有利的实施例中,将用于外部区域的丙烯酸酯基涂漆与铝片(用于具有银外观的涂漆的涂漆工业的颜料添加)混合,均化,并且将第一层沉积在具有约10cm×10cm的面积的玻璃载体上,该载体预先用半透明的导电金属层涂覆。将包含铝片的丙烯酸酯基层在空气中在室温下预硬化5分钟。随后,将相同的丙烯酸酯基涂漆的第二混合物用铝片制备,与二氧化硅溶胶混合,并且在冷却的搅拌器中用氢氧化钠水溶液调节至碱性pH并且均化。将仍反应的混合物作为第二层施加在第一预硬化层顶上,并且均匀且覆盖地分布。其中铝至少部分溶解的平行反应加速了两层的最终硬化。由此获得的层复合物在其顶面上设置有由来自Busch的室温导电银制成的指状电极。如图1所示,在扫描电子显微镜图像(SEM)中,由此获得的其顶面上的层的特征在于其中碱溶解的水玻璃提供硅氧烷部分的塑料基质。在该基质中携带的Al片溶解并且牢固地整合到塑料基质中。如图2所传授的,这些Al片通过塑料层到达表面,并允许由通过接触点和短电解质桥导电地互连的Al片制成的支架的直接电接触。使用手术刀分离塑料双层的柔性部分显示出该双层作为柔性的固体的可去除的复合物存在;通过SEM在其底面上测试所去除的部分。如图3在SEM图像中所示出的,在底面上也存在Al片,并且与半透明电极的相界面面接触并允许电接触。
该双层的顶面设置有由来自Busch的室温导电银制成的指状电极,并且与透明粘附地可结合的ITO膜补充地面接触。随后,将覆盖电极和底面电极接触,并研究电池的PV活性。最初通过具有可见光的冷光LED光源研究该双层的PV活性。光伏电流是弱至不存在的。在1至4秒的短预热阶段后用卤素灯照射时,测量超过100mV的明显的光伏电位差异。有可能使用恒定负载来操作LED自行车灯。该问题产生于这是否可归因于珀尔帖效应。为了测试这一点,整个接触的电池在顶面和底面上设置热电偶,焊接包装在具有实施的接触线的水密真空袋中并完全浸没在10升热水中。在约5分钟的加热时间后,所有热电偶的温度是相同的。在覆盖电极与底面电极之间的光伏电位差是显著的,并且成比例地依赖于现在随着水的温度而缓慢下降的电池温度。在起始值、最终值和测量值之间发生的变化用数字记录并且在图4a的图形中再现。如图4a所示出的,来自PV双层的光伏分接电位的测量显示出对于从46℃至31℃下降的水的温度成比例的依赖性:温度越低,可分接电位越低。然而,周围的水确保在这里不会测量到温度梯度,这在珀尔帖元件中将要求然后可测量的塞贝克效应。完全被均匀加热的水包围的电池的温度不显示梯度。
出人意料地,披萨炉中去除和未包装的电池的验证显示,在电池与披萨炉的热壁的距离处高达50℃下,没有足够的热辐射到达电池。如图4b所示出的,作为波长的函数的空气中H2O的已知光吸收最大值在5至10微米的波长范围内是显著的。
诸位发明人相信,特定地热水相应地在该波长范围内发出,并且因此在所选择的实验装置中以最高的效率提供具有适当能量的光子。测量结果清楚地表明在长波至远IR范围内超过5微米的可用带隙。然而,这也意味着相反地,在高热入射辐射下,足够的热辐射将需要穿透细胞周围的薄空气层并且能够产生电流。这被证实:在热炉石与双层之间具有2cm的空气间隙的在80℃下的披萨炉中,如以上描述的生产和接触的双层清楚并且明显地输送可测量的电流,其在冷却期间再次与温度成比例地下降并且在约60℃下失去控制。目前生产的双层序列使得有可能实现长波至极长波轻光分数直至远IR辐射的有利光伏利用,这种范围在现有技术中是不利地被忽略并且未研究的波长范围。当将上述电池连接到电压表上并用放置在其上的平手加热时,建立与相应的可测量的表面温度成比例的电位差。特别地,工业废热和/或体热可以有用地并且有效地用目前生产的PV层序列利用。
工业实用性
这是根据现有技术的方法的一个问题,这些方法总是需要在高温下的烧结步骤。另一个问题是柔性薄层、特别是PV层经常不能容许此类温度,并且另外不允许利用工业废热和/或长波光子。
这些问题的解决方案可以通过以下方法提供,其中在硬化期间加速另外的反应并且改善硬化。这特别有利地允许包含塑料基质的双层序列,其中遍及金属颗粒并且在顶层中存在碱溶解的硅氧烷部分并且存在金属颗粒,其中通过在碱溶解期间的相互最终硬化使得有可能产生工业废热/长波IR辐射通过光伏手段变得可利用的PV层序列。工业废热/热/体热的有效利用在许多领域提供了明显的经济优势。

Claims (4)

1.一种用于生产电工薄层的室温方法,其中以分散体平面地提供导电和/或半导体的无机金属附聚物并且将其硬化以提供层,该方法的特征在于
-在室温下进行该硬化并且
-通过暴露于至少一种试剂来加速该硬化,
其中,形成PV层序列,
其中,施加作为至少一个第一层的包含至少一种金属的层,其中该至少一种金属选自下组,该组由以下项组成:钢、锌、锡、银、铜、铝、镍、铅、铁,
其中,施加并且至少部分硬化作为第二层的至少一个金属导电和/或半导体层,
其中,第一层的无机金属附聚物是分布在塑料基质中的金属或金属化合物,这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼、铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆,
其中,第二层的无机金属附聚物是被安排分布在至少部分无机基质中的金属或金属化合物,其中这些金属或金属化合物的金属类型选自下组,该组由以下项组成:铍、硼、铝、镓、铟、硅、锗、锡、铅、砷、锑、硒、碲、铜、银、金、锌、铁、铬、锰、钛、锆,
其中,在第二层中,作为无机基质使用包含作为玻璃状氧化基质的至少一种链形成或改性元素的基质,该元素选自下组,该组由以下项组成:硼、磷、硅、砷、硫、硒、碲、无定形形式的碳、石墨改性的碳、碳纳米管形式的碳、多壁碳纳米管形式的碳、巴明敏斯特富勒烯形式的碳、钙、钠、铝、铅、镁、钡、钾、锰、锌、锡、锑、铈、锆、钛、锶、镧、钍、钇、氟、氯、溴、碘。
2.如权利要求1所述的方法,其特征在于,作为载体,使用平面地延伸的材料网,该材料网由至少一种选自以下材料组的材料组成,该组由以下项组成:玻璃、塑料、聚碳酸酯、塑料膜、金属合金、电机块合金、换热器管合金、换热器合金、换热器焊接合金、陶瓷、工业陶瓷、天然石、大理石、粘土陶瓷、屋顶瓦陶瓷、层压木材、地板材料、铝、楼梯铝合金、铂复合物、集成电路外壳材料、处理器外壳化合物。
3.如权利要求1或2所述的方法,其特征在于
-将导电电极层施加在载体顶上,
-将分布在塑料基质中的金属或金属化合物作为第一层中的无机金属附聚物施加在导电电极层顶上,
-将至少部分强碱性或强酸性氧化基质中的无机金属附聚物的第二层施加在该第一层顶上,其中
-在施加和硬化期间,第二层的无机金属附聚物与该强碱性或强酸性氧化基质反应,其中该强碱性或强酸性氧化基质还进而与该第一层的无机金属附聚物反应,
-在硬化和反应期间,形成光伏活性层序列,
-该第二层设置有透明覆盖电极和/或接触电极,并且
-适当地接触该光伏活性层序列并且焊接包装为PV层序列。
4.一种作为如前述权利要求中任一项所述的PV层序列获得的电工薄层序列,其特征在于,该薄层序列包括
-玻璃载体,
-施加在该玻璃载体顶上的电极层,该电极层包括银,
-施加在该电极层顶上的第一层,该第一层包含塑料基质中的铝颗粒,
-施加在该第一层顶上的第二层,该第二层包含作为至少部分碱性的玻璃状层的在玻璃状网络中的至少硅-氧桥,并且还包含作为无机金属附聚物的至少部分碱溶解的铝颗粒,
-施加在该第二层顶上并具有接触电极的透明覆盖电极,其中进而
-如此制备的PV层序列在长波和极长波长红外范围内表现出光伏效应。
CN201680023159.2A 2015-02-26 2016-02-26 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列 Active CN107533950B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE102015102801 2015-02-26
DE102015102801.8 2015-02-26
DE102015015435.4 2015-12-02
DE102015015435 2015-12-02
DE102015015600 2015-12-06
DE102015015600.4 2015-12-06
PCT/DE2016/100083 WO2016134703A1 (de) 2015-02-26 2016-02-26 Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und verfahrensgemäss erhaltene dünnschichtfolge

Publications (2)

Publication Number Publication Date
CN107533950A CN107533950A (zh) 2018-01-02
CN107533950B true CN107533950B (zh) 2022-02-11

Family

ID=55701647

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201680023159.2A Active CN107533950B (zh) 2015-02-26 2016-02-26 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列
CN201680022156.7A Active CN107466422B (zh) 2015-02-26 2016-02-26 通过室温方法获得pv膜结构以及用于生产pv膜结构的室温方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680022156.7A Active CN107466422B (zh) 2015-02-26 2016-02-26 通过室温方法获得pv膜结构以及用于生产pv膜结构的室温方法

Country Status (8)

Country Link
US (3) US11935976B2 (zh)
EP (2) EP3262673A1 (zh)
JP (5) JP2018509762A (zh)
CN (2) CN107533950B (zh)
BR (1) BR112017018306B1 (zh)
DE (1) DE102016002213A1 (zh)
RU (2) RU2732867C2 (zh)
WO (2) WO2016134704A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016134704A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Pv-schichtfolge erhalten durch ein raumtemperatur-verfahren und raumtemperatur-verfahren zur herstellung einer pv-schichtfolge
DE102017115533A1 (de) 2016-07-12 2018-01-18 Dynamic Solar Systems Ag Raumtemperatur-Druckverfahren zur Herstellung einer PV-Schichtfolge und verfahrensgemäß erhaltene PV-Schichtfolge
DE202017001454U1 (de) 2017-03-19 2017-06-22 Dynamic Solar Systems Ag Geregelte, gedruckte Heizung
DE102017002623A1 (de) 2017-03-20 2018-09-20 Reinhold Gregarek Verbessertes tribostatisches I-I-P-Verfahren, tribostatische Pulverdüse und Verwendung zur Herstellung elektrotechnischer Mehrschichtverbunde
DE202017002209U1 (de) 2017-04-27 2017-06-21 Dynamic Solar Systems Ag Gedruckte Elektrode mit arrangierbaren LED-Komponenten
DE202017002725U1 (de) 2017-05-23 2017-06-13 Dynamic Solar Systems Ag Heizpanel mit gedruckter Heizung
DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
DE102022114036A1 (de) 2022-06-02 2023-12-07 Glasfabrik Lamberts GmbH + Co. KG. Multifunktionale Profilbauglasbahn und diese enthaltende Profilbauglasanordnung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956826A (zh) * 2011-08-29 2013-03-06 海洋王照明科技股份有限公司 聚合物太阳能电池及其制备方法
DE102012022606A1 (de) * 2012-11-19 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Partikuläres Elektrodenmaterial mit einer Beschichtung aus einem kristallinen anorganischen Material und einem anorganisch-organischen Hybridpolymer und Verfahren zu dessen Herstellung

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE266693C (zh)
AT36002B (de) 1906-12-24 1909-01-25 Westinghouse Electric Corp Kollektor.
DE390400C (de) 1921-03-04 1924-02-20 Robert Woolridge Reynolds Verfahren zur Herstellung von elektrischen Heizwiderstaenden aus einer Mischung von Graphit und Wasserglas
DE410375C (de) 1923-02-04 1925-03-05 Robert Woolridge Reynolds Verfahren zur Herstellung einer elektrischen Heizwiderstandsschicht aus Silikatniederschlaegen, Graphit und Alkalisilikaten
DE839396C (de) 1949-04-03 1952-05-19 Heraeus Schott Quarzschmelze Waermestrahler, insbesondere fuer Zwecke der Therapie
DE1446978C3 (de) 1959-10-29 1974-10-31 Bulten-Kanthal Ab, Hallstahammar (Schweden) Warmfester, langgestreckter, stab- oder rohrförmiger Körper mit Siliciumcarbidgerüst und Verfahren zu seiner Herstellung
DE2004076A1 (de) 1970-01-30 1971-08-05 Kieninger & Obergfell Elektronische Uhr geringen Leistungsbedarfes
JPS49379B1 (zh) 1970-07-24 1974-01-07
FR2224790B1 (zh) 1973-04-03 1977-04-29 Cellophane Sa
US4040925A (en) * 1974-05-02 1977-08-09 Scm Corporation Ultraviolet curing of electrocoating compositions
CH627612B (de) 1980-03-07 Bulova Watch Co Inc Elektronisches miniaturgeraet, insbesondere elektronische armbanduhr.
AU575040B2 (en) 1983-03-10 1988-07-21 Basf Corporation Epsilon-caprolactone modified acrylic polymers
DE3675080D1 (de) 1985-05-30 1990-11-29 Matsushita Electric Ind Co Ltd Verfahren zum herstellen von graphitfolien.
US4911992A (en) 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
JPH04249379A (ja) 1991-02-05 1992-09-04 Taiyo Yuden Co Ltd 光起電力装置およびその製法
US5272017A (en) 1992-04-03 1993-12-21 General Motors Corporation Membrane-electrode assemblies for electrochemical cells
DE19647935C5 (de) 1996-11-20 2009-08-20 Ts Thermo Systeme Gmbh Elektrische Innenraumheizung für Wohnwagen
DE19815291B4 (de) 1998-04-06 2006-05-24 Ferro Gmbh Beschichtungszusammensetzung zur Herstellung von elektrisch leitfähigen Schichten
US6416818B1 (en) 1998-08-17 2002-07-09 Nanophase Technologies Corporation Compositions for forming transparent conductive nanoparticle coatings and process of preparation therefor
DE19946712A1 (de) 1999-09-29 2001-04-05 Inst Neue Mat Gemein Gmbh Verfahren und Zusammensetzungen zum Bedrucken von Substraten
EP1244168A1 (en) * 2001-03-20 2002-09-25 Francois Sugnaux Mesoporous network electrode for electrochemical cell
US6689950B2 (en) * 2001-04-27 2004-02-10 The Boeing Company Paint solar cell and its fabrication
US20060159838A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US6814795B2 (en) 2001-11-27 2004-11-09 Ferro Corporation Hot melt conductor paste composition
ES2548627T3 (es) 2003-01-30 2015-10-19 Pst Sensors (Pty) Limited Dispositivo semiconductor de película fina y procedimiento de fabricación de un dispositivo semiconductor de película fina
US7338620B2 (en) * 2004-03-17 2008-03-04 E.I. Du Pont De Nemours And Company Water dispersible polydioxythiophenes with polymeric acid colloids and a water-miscible organic liquid
JP4556232B2 (ja) * 2004-06-30 2010-10-06 日新電機株式会社 色素増感太陽電池及びその製造方法
CN100365828C (zh) * 2005-06-09 2008-01-30 西安交通大学 聚合物太阳能电池的深亚微米三维异质结界面及制备方法
DE102005038392B4 (de) * 2005-08-09 2008-07-10 Atotech Deutschland Gmbh Verfahren zum Herstellen von Muster bildenden Kupferstrukturen auf einem Trägersubstrat
JP5021200B2 (ja) * 2005-11-08 2012-09-05 関西ペイント株式会社 P型半導体分散体、p型半導体層、pn接合体及びエネルギー変換体
DE602007004150D1 (de) * 2006-08-11 2010-02-25 Ricoh Kk Pigmentdispersion, Tintenstrahltinte mit der Pigmentdispersion, Bilderzeugungsverfahren und Bilderzeugungsvorrichtung
KR20080026957A (ko) * 2006-09-22 2008-03-26 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
US20080182011A1 (en) * 2007-01-26 2008-07-31 Ng Hou T Metal and metal oxide circuit element ink formulation and method
DE102007014608B4 (de) 2007-03-23 2017-04-06 Evonik Degussa Gmbh Verfahren zur Herstellung eines porösen halbleitenden Films
US20080245413A1 (en) * 2007-04-04 2008-10-09 Hang Ruan Self assembled photovoltaic devices
US20080295884A1 (en) * 2007-05-29 2008-12-04 Sharma Pramod K Method of making a photovoltaic device or front substrate with barrier layer for use in same and resulting product
US8227691B2 (en) * 2007-10-31 2012-07-24 The Regents Of The University Of California Processing additives for fabricating organic photovoltaic cells
US8017458B2 (en) * 2008-01-31 2011-09-13 Northwestern University Solution-processed high mobility inorganic thin-film transistors
CN101965423B (zh) 2008-02-26 2013-05-29 帝人可多丽株式会社 皮革样片材及其制造方法
RU2391358C2 (ru) * 2008-03-13 2010-06-10 Учреждение Российской Академии Наук Объединенный Институт Высоких Температур Ран (Оивт Ран) Способ получения металлоуглеродных нанопокрытий
DE102008023882A1 (de) 2008-05-16 2009-11-19 Bayer Materialscience Ag Druckbare Zusammensetzung auf Basis von Silberpartikeln zur Erzeugung elektrisch leitfähiger Beschichtungen
KR101111215B1 (ko) * 2008-05-20 2012-03-13 남동희 전자기 방사 변환기 및 배터리
US20110217809A1 (en) * 2008-11-14 2011-09-08 Applied Nanotech Holdings, Inc. Inks and pastes for solar cell fabricaton
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
JP2010129619A (ja) * 2008-11-26 2010-06-10 Kazufumi Ogawa シリコン微粒子を用いた太陽電池および光センサーとそれらの製造方法
EP2438629A4 (en) * 2009-06-01 2015-08-19 Sumitomo Chemical Co FORMULATIONS FOR IMPROVED ELECTRODES FOR ELECTRONIC EQUIPMENT
WO2011021982A1 (en) 2009-08-20 2011-02-24 Nanyang Technological University Integrated electrode architectures for energy generation and storage
US8906548B2 (en) 2009-10-07 2014-12-09 Miltec Corporation Actinic and electron beam radiation curable electrode binders and electrodes incorporating same
JP5727766B2 (ja) * 2009-12-10 2015-06-03 理想科学工業株式会社 導電性エマルジョンインク及びそれを用いた導電性薄膜の形成方法
DE102010030074A1 (de) * 2010-06-15 2011-12-15 Evonik Degussa Gmbh Kunststoff-Photovoltaik-Modul und Verfahren zu seiner Herstellung
WO2012000001A2 (de) 2010-07-01 2012-01-05 Psw Systems Ag Speicher
BR112013003430A2 (pt) 2010-08-17 2016-06-21 Chemetall Gmbh "processo para o cobreamento de substratos metálicos sem corrente elétrica."
US9530925B2 (en) * 2010-10-19 2016-12-27 Air Products And Chemicals, Inc. Conductive composition and method for making conductive features on thin film PV cells
US20140027774A1 (en) * 2011-07-15 2014-01-30 Sionyx, Inc. Laser Processed Photovoltaic Devices and Associated Methods
KR101251841B1 (ko) * 2011-11-28 2013-04-09 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
EP2812923B1 (en) * 2012-02-10 2019-11-27 Lockheed Martin Corporation Photovoltaic cells having electrical contacts formed from metal nanoparticles and methods for production thereof
DE102012107100A1 (de) * 2012-08-02 2014-02-06 Dynamic Solar Systems Inc. Verbesserte Schichtsolarzelle
US20140161972A1 (en) * 2012-12-09 2014-06-12 National Sun Yat-Sen University Method for forming conductive film at room temperature
US9570694B2 (en) * 2013-01-28 2017-02-14 Aneeve Llc All printed and transparent CNT TFT
CN103214340B (zh) 2013-04-24 2015-03-11 南京邮电大学 蝶烯类有机纳米材料及制备方法
US9634161B2 (en) * 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
CN103293600B (zh) 2013-06-26 2015-01-28 南京邮电大学 利用分子链取向形成平面光波导及光耦合器的方法
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
US9761742B2 (en) 2013-12-03 2017-09-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US20150228815A1 (en) * 2014-02-12 2015-08-13 Tsmc Solar Ltd. High efficiency solar cells with micro lenses and method for forming the same
CN103839605B (zh) 2014-02-26 2016-04-13 华中科技大学 一种导电浆料及其制备方法和应用
KR102373812B1 (ko) * 2014-03-12 2022-03-11 메르크 파텐트 게엠베하 유기 전자 조성물 및 이의 장치
US20150287843A1 (en) * 2014-04-03 2015-10-08 Tsmc Solar Ltd. Solar cell with dielectric layer
TW201442271A (zh) 2014-07-08 2014-11-01 Tropica Solar Photovoltaic Company 彩色列印太陽能電池模組封裝結構之製法及其裝置
DE102016103432A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Raumtemperatur-Verfahren zur Herstellung elektrotechnischer Dünnschichten und elektrotechnische Dünnschicht
WO2016134704A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Pv-schichtfolge erhalten durch ein raumtemperatur-verfahren und raumtemperatur-verfahren zur herstellung einer pv-schichtfolge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956826A (zh) * 2011-08-29 2013-03-06 海洋王照明科技股份有限公司 聚合物太阳能电池及其制备方法
DE102012022606A1 (de) * 2012-11-19 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Partikuläres Elektrodenmaterial mit einer Beschichtung aus einem kristallinen anorganischen Material und einem anorganisch-organischen Hybridpolymer und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
RU2732867C2 (ru) 2020-09-24
CN107466422B (zh) 2021-03-19
JP2021177552A (ja) 2021-11-11
EP3262675A1 (de) 2018-01-03
BR112017018306A2 (pt) 2018-04-17
BR112017018306B1 (pt) 2023-01-10
RU2017131189A (ru) 2019-03-28
EP3262673A1 (de) 2018-01-03
RU2017131197A (ru) 2019-03-28
WO2016134703A1 (de) 2016-09-01
CN107533950A (zh) 2018-01-02
US20180040751A1 (en) 2018-02-08
JP2018521443A (ja) 2018-08-02
WO2016134704A1 (de) 2016-09-01
DE102016002213A1 (de) 2016-11-03
JP2021177549A (ja) 2021-11-11
US11935976B2 (en) 2024-03-19
JP2023067932A (ja) 2023-05-16
RU2017131189A3 (zh) 2019-07-17
CN107466422A (zh) 2017-12-12
JP2018509762A (ja) 2018-04-05
US20220052214A1 (en) 2022-02-17
RU2698739C2 (ru) 2019-08-29
US20180040432A1 (en) 2018-02-08
RU2017131197A3 (zh) 2019-06-20

Similar Documents

Publication Publication Date Title
CN107533950B (zh) 用于生产电工薄层的室温方法及按照所述方法获得的薄层序列
An et al. Single‐step selective laser writing of flexible photodetectors for wearable optoelectronics
TWI363378B (zh)
Liu et al. Non-planar vertical photodetectors based on free standing two-dimensional SnS 2 nanosheets
Du et al. CsPbI3 nanotube photodetectors with high detectivity
TWI505523B (zh) Thermoelectric conversion of composite materials, the use of its thermoelectric conversion material slurry, and the use of its thermoelectric conversion module
Cao et al. Ligand modification of Cu 2 ZnSnS 4 nanoparticles boosts the performance of low temperature paintable carbon electrode based perovskite solar cells to 17.71%
TN2009000041A1 (en) Multilayer photovoltaic electric energy generating compound and process for its preparation and application
Wang et al. Liquid-metal-assisted deposition and patterning of molybdenum dioxide at low temperature
Kuddus et al. Synthesis of Si NPs from river sand using the mechanochemical process and its applications in metal oxide heterojunction solar cells
Tseng et al. High-performance graphene-based heaters fabricated using maskless ultraviolet laser patterning
TW201822387A (zh) 可撓熱電結構與其形成方法
Fix et al. Silicon clathrate films for photovoltaic applications
JP2018093222A (ja) 亜鉛金属及び過酸化亜鉛の反応接合により形成される層状の接合構造
Matsushita et al. Influence of semiconductor crystallinity on a β-FeSi2 sensitized thermal cell
Mun et al. Enhanced Photocurrent Performance of Flexible Micro‐Photodetector Based on PN Nanowires Heterojunction using All‐Laser Direct Patterning
TW202018733A (zh) 用於改良金屬粒子層的材料屬性的具有基於金屬的添加劑的印刷漿料
Vishwakarma et al. Laser-assisted graphene growth directly on silicon
Al-Zahranil et al. Study the effect of the heat treatment on the photoelectrochemical performance of binary heterostructured photoanode Ag2S/ZnO nanorod arrays in photoelectrochemical cells
Bian et al. Tunable transformation between SnS and SnOx nanostructures via facile anodization and their photoelectrochemical and photocatalytic performance
JP2022163082A (ja) Pv層シーケンスを作り出すための室温印刷方法およびこの方法を使用して得られるpv層シーケンス
Djellal et al. Bulk p-CuInSe2 photo-electrochemical solar cells
Huang et al. Solution-Processed UV Photodiodes Based on Cs2Ag0. 35Na0. 65InCl6 Perovskite Nanocrystals
Tannarana et al. Transient photoresponse of infrared photodetector based on Sb0. 1Sn0. 9Se2 ternary alloy
Oh et al. High-temperature carbonized ceria thermophotovoltaic emitter beyond tungsten

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant