CN107507875B - Electrode encircling staggered structure of back contact solar cell and preparation method - Google Patents
Electrode encircling staggered structure of back contact solar cell and preparation method Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000012216 screening Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000001465 metallisation Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a back contact solar cell electrode surrounding staggered structure and a preparation method thereof, comprising the following steps: a battery sheet, a positive electrode wire, and a negative electrode wire; an N+ electrode and a P+ electrode are arranged on the back surface of the battery piece; the positive electrode wires and the negative electrode wires are respectively wound on the back surface of the battery piece, and the positive electrode wires and the negative electrode wires are mutually staggered; the positive electrode wire is silk-screened on the P+ electrode (11); the negative electrode wire is silk-screened on an N+ electrode (13); and the back of the battery piece is etched with a groove, and one of the P+ electrode (11) or the N+ electrode (13) is positioned in the groove. The invention achieves the purpose of metallization of the back surface of the battery by mutually encircling and staggered arrangement without contact, improves the efficiency of current collection and improves the photoelectric conversion rate to a certain extent. Meanwhile, the technological risk is reduced by the arrangement mode of the grooves, and the production and popularization are facilitated.
Description
Technical Field
The invention relates to the field of photocell preparation, in particular to a back contact solar cell electrode encircling staggered structure and a preparation method thereof.
Background
Solar cells are a type of semiconductor device that converts light energy into electrical energy, and lower production costs and higher energy conversion efficiency have been the targets pursued by the solar cell industry. For the conventional solar cell at present, a positive electrode contact electrode and a negative electrode contact electrode are respectively positioned on the front side and the back side of the cell piece. The back contact solar cell is a cell in which a positive electrode contact electrode and a negative electrode contact electrode are both arranged on the back (non-light-receiving surface) of the cell, and the light-receiving surface of the cell is free of shielding by any metal electrode, so that the short-circuit current of a cell sheet is effectively increased, and the energy conversion efficiency of the cell sheet is improved.
Back contact (Interdigitated Back-contact) solar cells are abbreviated IBC cells. The Sunpower company firstly realizes industrialization, and is characterized in that the front side is not provided with grid-shaped electrodes, and positive and negative electrodes are arranged at the back of the battery in a crossing way, so that the front side shading loss is eliminated, the front side zero shading of the battery is realized, and the effective semiconductor area is increased; the assembly cost of the assembly is reduced, and the appearance is good; the back surface is made into a cross junction with P+ and N+ staggered intervals by using a diffusion method, and the contact between the electrode and the emitter region or the base region is realized by opening a metal contact hole on silicon oxide. The emitter region and the base region electrode which are arranged in a crossed way almost cover most of the back surface, which is very beneficial to leading out current, but the method has complex process, the discharged waste seriously pollutes the environment, and the method is incompatible with the main stream metallization method of the current industrial production, has high process risk, and is more difficult to industrially popularize with low cost.
The Chinese patent with application number 201310093132.9 discloses a staggered back contact IBC solar cell electrode structure, wherein the back of the cell is provided with a positive grid line electrode and a negative grid line electrode which are staggered by fingers; the positive and negative grid line electrodes are insulated by laser etching or insulating glue; all positive and negative grid line electrodes on the back are respectively converged on the strip-shaped or block-shaped positive and negative contact electrodes; the positive and negative contact electrodes are connected through the conductive welding strip, and insulation film is used for isolating and insulating the conductive welding strip and the block positive and negative grid line electrodes. The photoelectric conversion efficiency of the large-size battery piece is improved, the development of the staggered back contact IBC battery piece to the battery piece with the size of 6 inches or more is realized, but the mode is actually the application of a Sunpower company cross junction, the current collection and the process risk are not well improved, and the insulation effect between the positive grid line electrode and the negative grid line electrode is poor.
Disclosure of Invention
In order to solve the problems, the invention provides a back contact solar cell electrode surrounding staggered structure and a preparation method thereof. According to the invention, the antireflection film and the suede are arranged on the front surface of the battery piece, so that the light absorption efficiency is improved, and the metallized patterns on the back surface of the back contact solar battery are designed to be mutually surrounded and staggered in a non-contact arrangement mode, so that the purpose of metallization on the back surface of the battery is achieved, the current collection efficiency is improved, and the photoelectric conversion rate is improved to a certain extent. Meanwhile, the technological risk is reduced by the arrangement mode of the grooves, and the production and popularization are facilitated.
In order to achieve the technical purpose, the technical scheme of the invention is as follows: a back contact solar cell electrode encircling staggered structure comprising: a battery sheet, a positive electrode wire, and a negative electrode wire; the back of the battery piece comprises an N+ electrode and a P+ electrode;
the positive electrode wires and the negative electrode wires are respectively wound on the back surface of the battery piece, and the positive electrode wires and the negative electrode wires are mutually staggered, and the mutually-wound staggered arrangement replaces the common staggered finger-fork arrangement, so that the current collection is more convenient;
the positive electrode wire is silk-screened on the P+ electrode; the negative electrode wire is silk-screened on an N+ electrode; and etching a groove on the back of the battery piece, wherein one of the P+ electrode and the N+ electrode is positioned in the groove. The trenches are designed so that the p+ or n+ electrode and the positive and negative electrode lines are insulated from each other.
Further, the battery piece includes from the front to the back in proper order: texturing, front surface field, substrate, back surface field; the back surface field includes a p+ pole formed by B doping and an n+ pole formed by P diffusion.
Further, the anti-reflection coating is covered on the texturing surface, so that light absorption is increased.
Further, the substrate is one of a P-type boron substrate or an N-type silicon substrate.
Further, the positive electrode line includes: positive contact electrode, positive strip contact electrode, positive loop line contact electrode; the positive contact electrode is positioned at one side of the outer edge of the battery piece, the positive contact electrode leads out a positive strip-shaped contact electrode to the central position of the back of the battery piece, and the positive loop line contact electrode is led out from the two sides of the positive contact electrode and the positive strip-shaped contact electrode.
The negative electrode line includes: a negative contact electrode, a negative strip-shaped contact electrode and a negative loop line contact electrode; the negative contact electrode is positioned at one side of the outer edge of the battery piece, the negative strip-shaped contact electrode is led out from the negative contact electrode to the central position of the back of the battery piece, and the negative loop line contact electrode is led out from the negative contact electrode and the two sides of the negative strip-shaped contact electrode.
Further, at least four positive loop line contact electrodes are arranged; the outermost positive loop line contact electrode surrounds one of the negative contact electrode or the negative strip contact electrode along the outer edge of the battery piece, and each positive loop line contact electrode is parallel to each other and is retracted towards the central position of the back of the battery piece;
at least four negative loop line contact electrodes are arranged; the outermost negative loop line contact electrode surrounds one of the positive contact electrode or the positive strip contact electrode along the outer edge of the battery piece, and each negative loop line contact electrode is parallel to each other and is retracted towards the central position of the back of the battery piece;
further, the positive loop line contact electrodes and the negative loop line contact electrodes are arranged in a staggered manner, and the negative loop line contact electrodes encircle the positive loop line contact electrodes to one of the positive contact electrodes or the positive strip contact electrodes.
Further, the positive contact electrode and the negative contact electrode are symmetrical about the cell center axis.
Further, the groove depth ensures that the positive electrode wire and the n+ electrode are not in contact and the negative electrode wire and the p+ electrode are not in contact.
The preparation method of the back contact solar cell electrode surrounding staggered structure comprises the following steps:
s1: selecting a substrate, and soaking and cleaning the substrate by using HF acid and HCl solution;
s2: etching the front surface of the substrate by using low-concentration alkali solution to prepare a suede with a cone; p diffusion is carried out on the texture surface to form a front surface field;
s3: adopting a PECVD (plasma enhanced chemical vapor deposition) process, and covering an anti-reflection coating on the texture surface;
s4: doping B in the doped region B on the back of the substrate to form a P+ electrode; depositing a Si3N4 layer on the back surface of the substrate by adopting a PECVD process; and silk-screen etching the photoresist on the P+ electrode by adopting one of wet etching and dry etching;
s5: etching a P diffusion region groove on the back surface of the substrate by adopting HF acid and HNO3, and introducing P-containing steam to perform diffusion to form an N+ electrode; removing the Si3N4 layer in the step S2 by utilizing BHF, and depositing the Si3N4 layer by adopting a PECVD process again; and silk-screen etching the photoresist on the N+ electrode by adopting one of wet etching and dry etching;
s6: and silk-screening the positive electrode wire on the P+ electrode and sintering, and silk-screening the negative electrode wire on the N+ electrode and sintering.
The invention has the beneficial effects that:
according to the invention, the antireflection film and the suede are arranged on the front surface of the battery piece, so that the light absorption efficiency is improved, and the metallized patterns on the back surface of the back contact solar battery are designed to be mutually surrounded and staggered in a non-contact arrangement mode, so that the purpose of metallization on the back surface of the battery is achieved, the current collection efficiency is improved, and the photoelectric conversion rate is improved to a certain extent. Meanwhile, the technological risk is reduced by the arrangement mode of the grooves, and the production and popularization are facilitated.
Drawings
Fig. 1 is a layout diagram of positive and negative electrode wires on the back of a battery plate according to the invention;
FIG. 2 is a schematic view of the structure of layers from the front side to the back side of the battery sheet according to the invention;
fig. 3 is a schematic structural diagram of the back side etched trench of the battery sheet of the present invention.
In the figure: 1. positive contact electrode, 2, positive strip contact electrode, 3, positive loop line contact electrode, 4, negative contact electrode, 5, negative strip contact electrode, 6, negative loop line contact electrode, 7, anti-reflection film textured surface, 8, front surface field, 9, substrate, 10, back surface field, 11, P+ electrode, 12, si3N4 layer, 13, N+ electrode.
Detailed Description
The technical scheme of the invention will be clearly and completely described below.
As shown in fig. 1, a back contact solar cell electrode encircling staggered structure includes: a battery sheet, a positive electrode wire, and a negative electrode wire; the back of the battery piece comprises an N+ electrode and a P+ electrode;
the positive electrode wires and the negative electrode wires are respectively wound on the back surface of the battery piece, and the positive electrode wires and the negative electrode wires are mutually staggered; the mutual encircling and staggered arrangement replaces the common interdigital staggered arrangement, and is more convenient for collecting current;
as shown in fig. 3, the positive electrode wire is silk-screened on the p+ electrode 11; the negative electrode wire is silk-screened on the N+ electrode 13; and the back of the battery piece is etched with a groove, and one of the P+ electrode 11 or the N+ electrode 13 is positioned in the groove. The trenches are designed so that the p+ electrode 11 or n+ electrode 13 and the positive and negative electrode lines are insulated from each other.
Further, as shown in fig. 2, the battery sheet sequentially includes, from the front side to the back side: a texturing surface 7, a front surface field 8, a substrate 9, a back surface field 10; the back surface field includes a p+ pole 11 formed by B doping and an n+ pole 13 formed by P diffusion. The PN junction is arranged on the back of the battery piece, the battery structure of the front metal grid is removed, the front shading loss is eliminated, the zero shading of the front of the battery is realized, and the effective semiconductor area is increased.
Further, the anti-reflection coating film is covered on the texturing surface 7, so that light absorption is increased, and light conversion efficiency is improved. The light forms diffuse reflection on the suede making surface 7, which is favorable for the secondary absorption of the light.
Further, the substrate 9 is one of a P-type boron substrate or an N-type silicon substrate.
Further, the positive electrode line includes: positive contact electrode 1, positive strip contact electrode 2, positive loop line contact electrode 3; the positive contact electrode 1 is positioned on one side of the outer edge of the battery piece, the positive contact electrode 1 leads out a positive strip-shaped contact electrode 2 to the central position of the back of the battery piece, and the positive loop line contact electrode 3 is led out from two sides of the positive contact electrode 1 and the positive strip-shaped contact electrode 2. The positive loop line contact electrode 3 collects current and is collected on the positive contact electrode 1 and the positive strip contact electrode 2. The positive loop line contact electrode 3 led out from the positive contact electrode 1 is longer, and more current is collected, so that the width of the positive contact electrode 1 is larger than that of the positive strip contact electrode 2; at the same time, the design of the positive contact electrode 1 facilitates the current extraction to the next cell or load.
The negative electrode line includes: a negative contact electrode 4, a negative strip-shaped contact electrode 5, and a negative loop wire contact electrode 6; the negative contact electrode 4 is positioned at one side of the outer edge of the battery piece, the negative contact electrode 4 leads out a negative strip-shaped contact electrode 5 to the central position of the back of the battery piece, and the negative loop line contact electrode 6 is led out from two sides of the negative contact electrode 4 and the negative strip-shaped contact electrode 5. The negative loop wire contact electrode 6 collects current and is collected on the negative contact electrode 4 and the negative strip contact electrode 5. The negative ring line contact electrode 6 led out from the negative contact electrode 4 is longer, and more current is collected, so that the width of the negative contact electrode 4 is larger than that of the negative strip contact electrode 5; while the design of the negative contact electrode 4 facilitates the current extraction to the next battery plate or load.
Further, at least four positive loop line contact electrodes 3 are arranged; the outermost positive-loop line contact electrode 3 surrounds one of the negative contact electrode 4 or the negative-loop line contact electrode 5 along the outer edge of the battery piece, and each positive-loop line contact electrode 3 is parallel to each other and is retracted towards the back center position of the battery piece;
at least four negative loop line contact electrodes 6 are arranged; the outermost negative-loop line contact electrode 6 surrounds one of the positive contact electrode 1 or the positive-loop line contact electrode 2 along the outer edge of the battery piece, and each negative-loop line contact electrode 6 is parallel to each other and is retracted towards the back center position of the battery piece;
further, the positive loop line contact electrodes 3 and the negative loop line contact electrodes 6 are arranged alternately, and the negative loop line contact electrodes 6 surround the positive loop line contact electrodes 3 to one of the positive contact electrodes 1 or the positive strip contact electrodes. The arrangement mode of mutually encircling and staggering without contact achieves the purpose of metallization of the back surface of the battery, improves the efficiency of current collection and improves the photoelectric conversion rate to a certain extent.
Further, the positive contact electrode 1 and the negative contact electrode 4 are symmetrical about the central axis of the battery plate.
Further, the groove depth ensures that the positive electrode wire and the n+ electrode 13 are not in contact, and the negative electrode wire and the p+ electrode 11 are not in contact.
The preparation method of the back contact solar cell electrode surrounding staggered structure comprises the following steps:
s1: selecting a substrate 9, and soaking and cleaning the substrate by using HF acid and HCl solution;
s2: etching the front surface of the substrate 9 by using low-concentration alkali solution to prepare a suede 7 with a cone; and P diffusion is carried out on the texture surface 7 to form a front surface field 8;
s3: adopting a PECVD process, and covering an anti-reflection coating on the texturing surface 7;
s4: doping B in the doped region B on the back surface of the substrate 9 to form a P+ electrode 11; depositing a Si3N4 layer 12 on the back surface of the substrate 9 by adopting a PECVD process; and the photoresist is silk-screen etched on the P+ electrode 11 by adopting one of wet etching and dry etching;
s5: etching a P diffusion region groove on the back surface of the substrate 9 by adopting HF acid and HNO3, introducing P-containing steam, and diffusing to form an N+ electrode 13, wherein the shape of the groove is consistent with that of the negative electrode wire; removing the Si3N4 layer 12 (the old Si3N4 layer is polluted by P) in the step S2 by utilizing BHF, and depositing the Si3N4 layer 12 by adopting a PECVD process again; and performing silk-screen etching on the N+ electrode 13 by adopting one of wet etching and dry etching;
the process of steps S4 and S5 has less processing risk than the existing process.
S6: the positive electrode wires are silk-screened and sintered on the P+ electrode 11, and the negative electrode wires are silk-screened and sintered on the N+ electrode 13.
Note that: the positive and negative electrodes, the N+ electrode and the P+ electrode are not limited to the arrangement mode in the illustration, and the positive and negative electrodes, the N+ electrode and the P+ electrode can be alternately arranged.
It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit of the invention.
Claims (6)
1. A back contact solar cell electrode encircling staggered structure, comprising: a battery sheet, a positive electrode wire, and a negative electrode wire; an N+ electrode (13) and a P+ electrode (11) are arranged on the back surface of the battery piece;
the positive electrode wires and the negative electrode wires are respectively wound on the back surface of the battery piece, and the positive electrode wires and the negative electrode wires are mutually staggered;
the positive electrode wire is silk-screened on the P+ electrode (11); the negative electrode wire is silk-screened on an N+ electrode (13); the back of the battery piece is etched with a groove, and one of the P+ electrode (11) or the N+ electrode (13) is positioned in the groove; wherein,
the positive electrode line includes: a positive contact electrode (1), a positive strip-shaped contact electrode (2) and a positive loop line contact electrode (3); the positive contact electrode (1) is positioned at one side of the outer edge of the battery piece, the positive contact electrode (1) leads out a positive strip-shaped contact electrode (2) to the central position of the back of the battery piece, and the positive loop line contact electrode (3) is led out from the positive contact electrode (1) and two sides of the positive strip-shaped contact electrode (2);
the negative electrode line includes: a negative contact electrode (4), a negative strip-shaped contact electrode (5), a negative loop line contact electrode (6); the negative contact electrode (4) is positioned at one side of the outer edge of the battery piece, the negative contact electrode (4) leads out a negative strip-shaped contact electrode (5) to the central position of the back of the battery piece, and the negative loop line contact electrode (6) is led out from the two sides of the negative contact electrode (4) and the negative strip-shaped contact electrode (5);
at least four positive loop line contact electrodes (3) are arranged; the outermost positive loop line contact electrode (3) surrounds one of the negative contact electrode (4) or the negative strip contact electrode (5) along the outer edge of the battery piece, and each positive loop line contact electrode (3) is parallel to each other and is retracted towards the central position of the back of the battery piece;
at least four negative loop line contact electrodes (6) are arranged; the outermost negative loop line contact electrode (6) surrounds one of the positive contact electrode (1) or the positive strip contact electrode (2) along the outer edge of the battery piece, and each negative loop line contact electrode (6) is parallel to each other and is retracted towards the central position of the back of the battery piece;
the positive loop line contact electrodes (3) and the negative loop line contact electrodes (6) are arranged in a staggered manner, and the negative loop line contact electrodes (6) encircle one of the positive contact electrodes (1) or the positive strip contact electrodes from the positive loop line contact electrodes (3);
the trench depth ensures that the positive electrode line and the n+ electrode (13) are not in contact and the negative electrode line and the p+ electrode (11) are not in contact.
2. The back contact solar cell electrode encircling staggered structure of claim 1, wherein the cells sequentially comprise, from front side to back side: a texturing surface (7), a front surface field (8), a substrate (9) and a back surface field (10); the back surface field includes a p+ pole (11) formed by B doping, an n+ pole (13) formed by P diffusion.
3. The back contact solar cell electrode encircling staggered structure according to claim 2, wherein the textured surface (7) is covered with an anti-reflection coating.
4. A back contact solar cell electrode encircling staggered structure according to claim 2, characterized in that the substrate (9) is one of a P-type boron substrate or an N-type silicon substrate.
5. A back contact solar cell electrode encircling staggered structure according to claim 1, characterized in that the positive contact electrode (1) and the negative contact electrode (4) are symmetrical about the cell central axis.
6. A method for preparing the back contact solar cell electrode encircling staggered structure, which is used for preparing the back contact solar cell electrode encircling staggered structure as claimed in any one of claims 1 to 5, and comprises the following steps:
s1: selecting a substrate (9), and soaking and cleaning the substrate by using HF acid and HCl solution;
s2: etching the front surface of the substrate (9) by using low-concentration alkali solution to prepare a suede (7) with a cone; and P diffusion is carried out on the texture surface (7) to form a front surface field (8);
s3: adopting a PECVD process, and covering an anti-reflection coating on the texturing surface (7);
s4: doping B in a B doped region on the back side of the substrate (9) to form a P+ electrode (11); depositing a Si3N4 layer (12) on the back surface of the substrate (9) by adopting a PECVD process; and performing silk-screen etching on the P+ electrode (11) by adopting one of wet etching and dry etching;
s5: etching a P diffusion region groove on the back surface of the substrate (9) by adopting HF acid and HNO3, and introducing P-containing steam to diffuse to form an N+ electrode (13); removing the Si3N4 layer (12) in the step S2 by utilizing BHF, and depositing the Si3N4 layer (12) by adopting a PECVD process again; and silk-screen etching the photoresist on the N+ electrode (13) by adopting one of wet etching and dry etching;
s6: and (3) silk-screening the positive electrode wire on the P+ electrode (11) and sintering, and silk-screening the negative electrode wire on the N+ electrode (13) and sintering.
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