CN107507858B - 一种限流二极管 - Google Patents
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Abstract
本发明属于半导体技术领域,涉及一种限流二极管。本发明提出了一种新型限流二极管,运用薄势垒AlGaN/GaN异质结上生长电荷恢复层调制二维电子气的技术,在实现器件增强型,具有较低开启电压,较大反向耐压的前提下,该结构的优势在于电荷恢复层刻蚀所用的氟基气体对于电荷恢复层下方的势垒层几乎不会造成任何刻蚀效果,最终可以实现自终止在AlGaN界面处以实现对势垒层精确控制的目的。该发明避免对AlGaN层的刻蚀,不会对AlGaN层造成破坏,所以器件具有较大的电流密度,较高的电子迁移率和较低的导通电阻。
Description
技术领域
本发明属于功率半导体技术领域,涉及一种限流二极管。
背景技术
由于具备高的反向击穿电压,较高压电极化效应形成的载流子浓度以及较大的电子迁移率,氮化镓功率器件已经成为下一代高频大功率器件的最佳选择之一。近年来,AlGaN/GaN异质结增强型HEMT器件已经得到广泛的研究。但是,氮化镓异质结材料功率二极管并没有得到足够的关注,尤其是氮化镓限流二极管。
由于LED照明业的空前发展,对于限流二极管(整流器)的需求也日渐增多。限流二极管不仅被用于LED照明的亮度控制,也能用于保护功率器件避免因过流,过载而可能造成的损坏。
限流器的研究已经在碳化硅、硅功率器件中得到了比较成熟的研究,例如垂直耗尽型MOSFET,SiC垂直JFET等。但是鲜有氮化镓功率二极管的报道,结合氮化镓功率器件和InGaN/GaN LEDs的优势,可以进一步提高***的可靠性,减小因互联而带来的寄生效应。
发明内容
针对上述问题,本发明提出了一种新型限流二极管(如图5),薄势垒AlGaN/GaN异质结(如图2)替代传统异质结材料(如图1),运用薄势垒材料上生长电荷恢复层(如图3)调制二维电子沟道的技术,避免了因为刻蚀势垒层而带来的晶格损伤,保证二维电子气的电子迁移率不会因为刻蚀后的缺陷散射而降低,同时实现精确控制势垒层厚度的目的。运用刻蚀阴极电荷恢复层形成阶梯状(8),对阴极附近的电场形成一个有效的调制作用,改变阶梯的长度,宽度和深度,进而实现对阴极下方的二维电子气的调控作用,也进一步实现二极管的整流能力。
本发明提出的一种新型限流二极管工作原理为:源极、漏极与器件有源区表面形成欧姆接触作为电流输入、输出端口。在源极漏极紧靠源极之间,通过局部全刻蚀电荷恢复层形成栅槽,并在此结构上通过肖特基金属短接源极制得器件阳极。源极漏极紧靠漏极之间,刻蚀阴极电荷恢复层形成阶梯状,并在此结构上通过肖特基金属短接漏极形成器件的阴极。当栅极(阳极)不加电压时,由于栅极下方局部2-DEG的局部耗尽形成较高势垒,电子不能通过,源极漏极之间看做不能导通,器件处于关断状态。当给栅极(阳极)施加一足够高的正电压时,势垒降低,栅下二维电子气沟道恢复连通,源极漏极之间便能够导通,器件处于开启状态。同时,阴极的阶梯状场板结构,调节阶梯的长度,宽度和深度,对阴极下方的电场起到明显的调制作用,实现电流的快速饱和而不改变器件的开启电压。
传统槽栅结构的器件(如图4),整个栅极下方的电子被完全耗尽,同时涉及到势垒层的全刻蚀或部分刻蚀,上述过程是难以精确控制的。当采用薄势垒材料的构造来制备器件,通过刻蚀电荷恢复层能够同样实现对二维电子气的耗尽作用,该种做法的优势在于电荷恢复层刻蚀所用的氟基气体对于电荷恢复层下方的势垒层几乎不会造成任何刻蚀效果,最终可以实现自终止在AlGaN界面处以实现对势垒层精确控制的目的,避免刻蚀势垒层造成的晶格损伤,降低了缺陷散射对二维电子气(3)中电子迁移率的不利影响,提高了器件的正向导通特性。
为实现上述目的,本发明采用如下技术方案:
一种新型限流二极管,一种限流二极管,包括衬底1、衬底上方的异质结、异质结上方的电荷恢复层7、栅极、源极、漏极5,所述异质结由GaN层与GaN层上方的AlGaN层形成,所述栅极位于异质结上方且与之形成肖特基接触,所述源极和漏极位于电荷恢复层7上表面两侧,所述源极上表面具有源极金属;所述漏极上表面具有漏极金属;其特征在于:所述AlGaN层为薄势垒层,厚度为3-10nm;所述栅极为通过局部全刻蚀电荷恢复层7形成的凹槽栅9结构,所述栅极与源极相邻,且栅极金属延伸至部分源极金属上表面;所述漏极金属沿电荷恢复层7上表面向靠近源极的方向延伸,且与漏极侧面相连部分的漏极金属向下延伸至电荷恢复层7中,延伸至电荷恢复层7中部分的漏极金属为阶梯状结构,所述漏极金属为由Ni/Pt/Au构成的叠层结构。作为优选方式,所述AlGaN层势垒厚度为5nm。
作为优选方式,所述栅极与槽栅结构之间***电介质层。
作为优选方式,所述电介质层为Al2O3、SiO2、Si3N4、Ta2O5、MgO、Sc2O3、LaLuO3、TiO2其中的一种或多种的复合。
本发明的技术方案对比Zhou C,Chen W,Piner E L,et al.“AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunityand Low On-Resistance[J].”IEEE Electron Device Letters,2010,31(1):5-7.本发明的优势在于不采用离子注入实现增强型的目的,因为在器件的制备过程中会使用退火以及诸如LPCVD(700℃-800℃),PECVD(250-350℃),ALD(200-500℃)等高温工艺生长其他材料,上述高温过程会改变注入离子的空间分布,从而改变器件的性能,影响器件的可靠性、稳定性。对比Lee J G,Park B R,Cho C H,et al.“Low Turn-On Voltage AlGaN/GaN-on-SiRectifier With Gated Ohmic Anode[J].”IEEE Electron Device Letters,2013,34(2):214-216.通过部分刻蚀栅槽以实现增强型;本发明中采用薄势垒的异质结取代传统异质结结构,通过生长10-200nm电荷恢复层来恢复薄势垒异质结中二维电子气,本发明是采用刻蚀电荷恢复层以实现调控栅下二维电子气的目的,避免刻蚀势垒层造成的晶格损伤,降低了晶格损伤造成的缺陷散射对二维电子气(3)迁移率的不利影响;另外,混合阴极特殊的阶梯状场板结构,一方面通过阶梯型电荷恢复层对阴极下方的二维电子分布起到调控作用;另一方面,混合阴极特殊的阶梯状金属板也可以调控阴极下方的电场分布,在上述两方面的作用下,该二极管导通电流能实现快速饱和达到恒流的功能。通过调节混合阴极阶梯深度和长度可以调控恒定电流大小、电流饱和点、恒流范围等。
本发明的有益效果为:本发明提出了一种新型限流二极管,运用薄势垒AlGaN/GaN异质结上生长电荷恢复层调制二维电子气的技术,在实现器件增强型,具有较低开启电压,较大反向耐压的前提下,该结构的优势在于电荷恢复层刻蚀所用的氟基气体对于电荷恢复层下方的势垒层几乎不会造成任何刻蚀效果,最终可以实现自终止在AlGaN界面处以实现对势垒层精确控制的目的。该发明避免对AlGaN层的刻蚀,不会对AlGaN层造成破坏,所以器件具有较大的电流密度,较高的电子迁移率和较低的导通电阻。同时,阴极特殊的阶梯状场板结构,一方面通过阶梯型电荷恢复层对阴极下方的二维电子分布起到调控作用;另一方面,阶梯状的金属场板也对阴极下方的电场分布有明显的调控能力,在上述两方面的作用下,该二极管电流能实现快速饱和而开启电压不发生明显变化,降低了该二极管的电能和功率损耗,增强了该二极管的限流范围。
附图说明
图1是常规势垒材料源极漏极连线方向横截面结构示意图;
图2是薄势垒材料源极漏极连线方向横截面结构示意图;
图3是薄势垒材料表面生长10-200nm电荷恢复层后源极漏极连线方向横截面结构示意图;
图4是常规势垒材料制备限流器源极漏极连线方向横截面结构示意图;
图5是本发明沿源极漏极连线方向横截面结构示意图;
图6是本发明生长肖特基金属前三维立体结构示意图;
其中,1位衬底,2为GaN层,3为2-DEG,4为AlGaN层,5为欧姆金属,6肖特基金属,7为电荷恢复层,8为阶梯状场板凹槽,9位全刻电荷恢复层形成的凹槽栅。
具体实施方式
在发明内容部分已经对本发明进行了详细描述,在此不再赘述。
Claims (4)
1.一种限流二极管,包括衬底(1)、衬底上方的异质结、异质结上方的电荷恢复层(7)、栅极、源极、漏极(5),所述异质结由GaN层与GaN层上方的AlGaN层形成;所述栅极为肖特基金属,位于异质结上方且与AlGaN层接触形成肖特基接触;所述源极和漏极位于电荷恢复层(7)上表面两侧;所述源极为欧姆金属;所述漏极为欧姆金属与肖特基金属组成的阶梯状叠层结构;其特征在于:所述AlGaN层为薄势垒层,厚度为3-10nm;所述栅极为通过局部全刻蚀电荷恢复层(7)形成的凹槽栅(9)结构;所述栅极与源极相邻,且栅极延伸至源极上表面;所述漏极肖特基金属部分位于欧姆金属上方,其余部分沿电荷恢复层(7)上表面向靠近源极的方向延伸,且与漏极欧姆金属侧面相连部分的肖特基金属通过局部不完全刻蚀电荷恢复层(7)形成阶梯状结构(8)。
2.根据权利要求1所述的一种限流二极管,其特征在于:所述电荷恢复层(7)厚度为10-200nm。
3.根据权利要求1所述一种限流二极管,其特征在于:所述栅极与异质结之间具有电介质层。
4.根据权利要求3所述的一种限流二极管,其特征在于:所述电介质层采用的材料为Al2O3、SiO2、Si3N4、Ta2O5、MgO、Sc2O3、LaLuO3、TiO2其中的一种或多种的复合。
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