CN107503108A - The preparation method and equipment of novel environment friendly is seamless wall cloth - Google Patents

The preparation method and equipment of novel environment friendly is seamless wall cloth Download PDF

Info

Publication number
CN107503108A
CN107503108A CN201610412543.3A CN201610412543A CN107503108A CN 107503108 A CN107503108 A CN 107503108A CN 201610412543 A CN201610412543 A CN 201610412543A CN 107503108 A CN107503108 A CN 107503108A
Authority
CN
China
Prior art keywords
wall cloth
seamless wall
seamless
injection
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610412543.3A
Other languages
Chinese (zh)
Inventor
廖斌
王宇东
于晶晶
姜其立
张旭
吴先映
罗军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Normal University
Original Assignee
Beijing Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Normal University filed Critical Beijing Normal University
Priority to CN201610412543.3A priority Critical patent/CN107503108A/en
Publication of CN107503108A publication Critical patent/CN107503108A/en
Pending legal-status Critical Current

Links

Classifications

    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06MTREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M10/00Physical treatment of fibres, threads, yarns, fabrics, or fibrous goods made from such materials, e.g. ultrasonic, corona discharge, irradiation, electric currents, or magnetic fields; Physical treatment combined with treatment with chemical compounds or elements
    • D06M10/04Physical treatment combined with treatment with chemical compounds or elements
    • D06M10/06Inorganic compounds or elements
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06MTREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M11/00Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising
    • D06M11/32Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with oxygen, ozone, ozonides, oxides, hydroxides or percompounds; Salts derived from anions with an amphoteric element-oxygen bond
    • D06M11/36Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with oxygen, ozone, ozonides, oxides, hydroxides or percompounds; Salts derived from anions with an amphoteric element-oxygen bond with oxides, hydroxides or mixed oxides; with salts derived from anions with an amphoteric element-oxygen bond
    • D06M11/46Oxides or hydroxides of elements of Groups 4 or 14 of the Periodic System; Titanates; Zirconates; Stannates; Plumbates

Abstract

New antistatic seamless wall cloth, automatical cleaning ability and the method and apparatus for possessing the ability of purifying the air of a room are improved based on ion beam technology the invention discloses a kind of, wherein, this method is to utilize metal vacuum steam plasma source method (MEVVA) on seamless wall cloth surface, layer of metal element is injected for its surface, the metallic element of injection is Ti.Equipment includes vacuum system, reel system and ion source system.By implementing the present invention, wall cloth has preferable antistatic effect and good automatical cleaning ability, while TiO caused by injection2Nano microcrystalline can be under sunshine irradiation in decomposition chamber noxious material, play the effect to purify the air of a room.

Description

The preparation method and equipment of novel environment friendly is seamless wall cloth
Technical field
The present invention relates to beam material surface modifying technology field, more particularly to seamless wall cloth surface method for implanting and equipment
Technical background
Seamless wall cloth is one kind of wall paper, also referred to as seamless wall cloth, is a new wall paper product of domestic-developed in recent years, it It is to be designed according to the height of indoor wall, the wall paper that can be integrally pasted by the girth of indoor wall, general breadth is at 2.7 meters Seamless wall cloth is referred to as to 3.10 meters of wall papers." seamless " i.e. integral construction, it can be cut surely according to room girth, wall paper breadth More than or equal to room height, a room is pasted with a piece of cloth, without splicing.It is seamless paste, third dimension is strong, good hand touch, Decorative effect presents, is grease proofing, antifouling, dust-proof, anti-wall splits, and the various functions such as easily arranges.
But although existing seamless wall cloth preceding working procedure is especially added with soil resistant finish technique, but overall anti-static ability or bad, Wall cloth is caused to be contaminated in northern dry weather adsorption micronic dust, and as people increasingly pay attention to home environment, can Possesses the development trend that the product of toxic organic compound function in decomposition chamber turns into now wall cloth.
The content of the invention
In view of this, the first purpose of the embodiment of the present invention is the metal vacuum steam plasma source in coupled ion beam technology (MEVVA) a kind of antistatic seamless wall cloth of brand-new raising, automatical cleaning ability are proposed and possesses the ability of purifying the air of a room Method and apparatus.
The beneficial effects of the invention are as follows:By injecting metal Ti elements on seamless wall cloth surface, its surface be not easy to adhere to microparticle, If any common dust, can be brushed lightly with feather duster can remove;Slight is dirty, is cleaned with white wet towel Remove;Severe it is dirty, be stained with some neutral abluents with white wet towel and clean, it is basic to remove totally, and holding fabric is original State forms anatase TiO simultaneously as injection Ti elements on wall cloth top layer2It is nanocrystalline, can be in the presence of illumination Toxic organic compound in decomposition chamber, plays a part of that purifies the air of a room
In certain embodiments, the seamless wall cloth injection technique includes:Using metal vacuum steam plasma source (MEVVA), Ti is injected to the substrate layer;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, implantation dosage For 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm.
In certain embodiments, described device includes:
Two sets of injection devices, for using metallic vapour ion gun (MEVVA), metal ion to be carried out to the wall cloth basalis Injection;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is 1×1015~5 × 1017/cm2, injection depth is 70~420nm;
Relative to prior art, various embodiments of the present invention have the advantage that:
What the 1st, the embodiment of the present invention proposed improves antistatic seamless wall cloth, automatical cleaning ability based on ion beam technology and possesses clean room The method and apparatus of interior ability of air, injected by the metallic element that high-energy is carried out to wall cloth, make base material sub-surface atom The pinning Rotating fields mixed with injection metal formation metal-matrix atom, " pinning layer " structure and substrate so formed The adhesion of layer is all very good, service life length;
2nd, TiO can be formed in the pinning Rotating fields of the seamless wall cloth of Ti ion implantings2Nanocrystalline, it is good photocatalyst material, Organic matter that can rapidly in decomposition chamber under light conditions, compared to adding photocatalyst material by chemical method now, Its this method is grown in wall cloth body, using effect and life-span can greatly enhance, meanwhile, wall cloth is not influenceed in itself Appearance.
It should be noted that for foregoing embodiment of the method, in order to be briefly described, therefore it is all expressed as to a series of action Combination, but those skilled in the art should know, the present invention is not limited by described sequence of movement, because according to this Invention, some steps can use other orders or carry out simultaneously secondly, and those skilled in the art should also know, explanation Embodiment described in book belongs to preferred embodiment, and involved action is not necessarily necessary.
Brief description of the drawings
Fig. 1 is that the embodiment of the present invention is based on the antistatic seamless wall cloth of ion beam technology raising, automatical cleaning ability and possesses purification The method flow schematic diagram of room air ability;
Fig. 2 is seamless wall cloth structural representation provided in an embodiment of the present invention;
Fig. 3 is the structural representation of MEVVA injected systems provided in an embodiment of the present invention;
Fig. 4 is the comparison of seamless wall cloth surface resistivity before and after the processing;
XRD analysis result after Fig. 5 Ti ion implantings are seamless wall cloth;
Sunshine declines the result of solution methyl orange before and after treatment for Fig. 6 is seamless wall cloth.
Description of reference numerals
200 seamless wall cloth substrates
210 metal pinning layers
301 vacuum chambers
302 bleeding points
303 receive wall cloth rotary shaft
304 vacuum chamber heating rods
305 put wall cloth rotary shaft
306 cooling rotary shafts
307 No. 1 MEVVA ion guns
308 No. 2 MEVVA ion guns
309 MEVVA ion source cathodes
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely retouched State, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on the present invention In embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, Belong to the scope of protection of the invention
It should be noted that in the case where not conflicting, the feature in the embodiment of the present invention and embodiment can be mutually combined.
Below in conjunction with the accompanying drawings, each preferred embodiment of the present invention is described further:
Embodiment of the method
1. early stage is handled:
Seamless wall cloth base material is placed in vacuum drying oven and is heated to 150 DEG C and carries out baking 12h.
2nd, prepared by metal implanted layer:
Seamless wall cloth base material 200 is fixed on circular rotating shaft 305, the other end is fixed on circular rotating shaft 303, and centre is placed in cold But axle 306, open ion gun and injected.The pure Ti that ion gun is purity 99.9% is injected, injection condition is:Vacuum 1 ×10-3~6 × 10-3Pa, inject arc voltage:50~70V.
It is pointed out that in S100, metallic element is using Ti.Injecting voltage is 4~80kV, and beam intensity is 1~80mA (contains end value), and implantation dosage is 1 × 1015~5 × 1017/cm2(containing end value), injection depth are 70~420nm (containing end value), worked simultaneously for two sets of MEVVA systems to ensure the processing height of the seamless wall cloth in longitudinal direction during injection.
Apparatus embodiments
To realize the preparation method of above-mentioned seamless wall cloth, based on the various embodiments described above, the present embodiment proposes a kind of seamless wall cloth of ion Ion implantation device, the equipment include following device:
1st, injection device
Wherein, injection device is used to utilize MEVVA ion guns (two sets of injected systems), injects metal to the wall cloth substrate Element, form pinning layer
It should be noted that MEVVA ion guns mainly produce area by plasma and ion beam draw-out area forms, plasma It is exactly to be carried using caused by MEVVA ion guns to produce area i.e. metal vapor vacuum arc region of discharge .MEVVA ion implantings Can ion beam bombardment material surface, ion implanting is carried out to substrate surface, so as to change the physics of material surface, chemical property Process
B) coiler device, the stainless rotating steel shaft that three root longs are 1.5 meters is configured to, front and rear two rotating shafts drive for motor, and centre is Cooling shaft
Fig. 4, Fig. 5 and Fig. 6 are can refer to here to be illustrated to the antistatic and photo-catalysis capability performance for handling seamless wall cloth What Fig. 4 can will be apparent that sees, the seamless wall cloth surface conductivity after Ion Beam Treatment can strengthen, and this is to seamless wall cloth Antistatic effect has important influence, and it can significantly be weakened to micro- in air by reducing the charge number on seamless wall cloth surface The adsorption capacity of grain, so as to remain the clean and tidy and clean of wall cloth.Fig. 5 is that wall cloth passes through the XRD spectra after ion implanting (5×1016/cm2), significantly there is a small amount of titanium dioxide anatase peak such as (101) and (200) face in spectrogram.Rutile titania The appearance of ore deposit shows the ability that there is seamless wall cloth light to decompose toxic organic compound, and the forbidden band of anatase is 3.2eV, can be absorbed 388nm light produces electronics and hole pair, hole, and there is strong oxidation performance oxidation of organic compounds it is become carbon dioxide and water, It is seamless wall cloth degraded methyl orange solution before and after ion implanting that there is electronics strong reducing property, which can reduce some harmful ions Fig. 6, Empirical curve, it is respectively 0,1 × 10 to list three implantation dosages in figure16And 5 × 1016/cm2, ordinate is methyl orange Absorbance, abscissa be methyl orange degradation time, it is evident that the seamless wall cloth through Ti ion implantings has obvious photooxidation Change ability.It is obvious that seamless wall cloth, after the processing of MEVVA ion implant systems, wall cloth possesses good antistatic effect, It is provided simultaneously with automatical cleaning ability and possesses the ability of purifying the air of a room.

Claims (6)

1. a kind of improve antistatic seamless wall cloth, automatical cleaning ability and the method for possessing the ability of purifying the air of a room using ion implantation technique.
2. the ion implantation device for seamless wall cloth surface deposited hydrophobic film layer described in right 1.
3. metal injection technique according to claim 1, it is characterised in that:The basalis is seamless wall cloth.
4. metal injection technique according to claim 3, it is characterised in that:The metallic element is Ti, and its injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm.
5. the equipment according to claim 1 that ion implanting is carried out on wall cloth, it is characterised in that including:
A) injection device, it is configured to utilize two sets of metal vapor vacuum arc (MEVVA) systems, cathode size is diameter 100mm, injects metal Ti elements to the wall cloth substrate surface using the MEVVA ion guns, forms metal implanted layer;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm, and beam spot diameter, size is 0.8 meter.
B) coiler device, it is 1.5 meters of stainless rotating steel shaft to be configured to three root longs, and front and rear two rotating shafts are motor driving, a diameter of 0.1 meter, and centre is cooling shaft, a diameter of 0.2 meter.
Improve that seamless wall cloth is antistatic and the method for automatical cleaning ability 6. a kind of, it is characterised in that be provided with using the seamless wall cloth of environment-friendly type for injecting Ti on wall cloth and preparing described in any one of claim 1 to 5.
CN201610412543.3A 2016-06-14 2016-06-14 The preparation method and equipment of novel environment friendly is seamless wall cloth Pending CN107503108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610412543.3A CN107503108A (en) 2016-06-14 2016-06-14 The preparation method and equipment of novel environment friendly is seamless wall cloth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610412543.3A CN107503108A (en) 2016-06-14 2016-06-14 The preparation method and equipment of novel environment friendly is seamless wall cloth

Publications (1)

Publication Number Publication Date
CN107503108A true CN107503108A (en) 2017-12-22

Family

ID=60678439

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610412543.3A Pending CN107503108A (en) 2016-06-14 2016-06-14 The preparation method and equipment of novel environment friendly is seamless wall cloth

Country Status (1)

Country Link
CN (1) CN107503108A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278032A (en) * 1999-06-17 2000-12-27 中国科学院化学研究所 Antistatic fiber fabrics, and the prepn. method and use thereof
CN104372295A (en) * 2014-09-23 2015-02-25 北京师范大学 Making methods and apparatuses of flexible substrate circuit board and metal pinning layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278032A (en) * 1999-06-17 2000-12-27 中国科学院化学研究所 Antistatic fiber fabrics, and the prepn. method and use thereof
CN104372295A (en) * 2014-09-23 2015-02-25 北京师范大学 Making methods and apparatuses of flexible substrate circuit board and metal pinning layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
路艳华、林杰著: "《壳聚糖及纳米材料在榨蚕丝功能改性中的应用》", 31 August 2012, 中国纺织出版社 *

Similar Documents

Publication Publication Date Title
Wang et al. Phosphorous doped carbon nitride nanobelts for photodegradation of emerging contaminants and hydrogen evolution
CN203152561U (en) Sterilization and dust prevention mask
Qu et al. Controllable synthesis of a sponge-like Z-scheme N, S-CQDs/Bi2MoO6@ TiO2 film with enhanced photocatalytic and antimicrobial activity under visible/NIR light irradiation
CN1914131A (en) Method for cleaning a substrate
CN105780084A (en) Preparation method of long-pipe diameter TiO2 nanotube array and application of long-pipe diameter TiO2 nanotube array
Zuo et al. Construction of visible light driven silver sulfide/graphitic carbon nitride pn heterojunction for improving photocatalytic disinfection
Tsai et al. DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application
Naghibi et al. Exploring a new phenomenon in the bactericidal response of TiO2 thin films by Fe doping: Exerting the antimicrobial activity even after stoppage of illumination
US11572285B2 (en) Self-decontaminating antimicrobial compositions, articles, and structures, and methods of making and using the same
Wang et al. Photoelectrocatalytic removal of organic dyes and Cr (VI) ions using Ag3PO4 nanoparticles sensitized TiO2 nanotube arrays
CN106086820A (en) A kind of preparation method of the fluorinated graphene composite being loaded with nanometer silver
CN107503108A (en) The preparation method and equipment of novel environment friendly is seamless wall cloth
KR101350166B1 (en) Apparatus and method for fabricating anti-microbial air filter media and anti-microbial air filter media
KR102581602B1 (en) a air cleaner using low temperature plasma
JP2013530923A (en) Doped material
CN104451955B (en) Metal or metal oxide with hierarchical structure and preparation method of metal or metal oxide
CN107715895B (en) ZnO/Ag/Sb2S3Preparation method of photocatalyst material
Park et al. Comparison of Electrochemical Luminescence Characteristics of Titanium Dioxide Films Prepared by Sputtering and Sol–Gel Combustion Methods
JP2995250B2 (en) A method for plasma spraying titanium oxide powder on a substrate and a product having a plasma sprayed coating.
TW201420182A (en) Transition metal compound-loaded titanium oxide
CN107892380B (en) Device and method for eliminating nitrate in underground water
CN111116054B (en) Red phosphorus/zinc oxide heterojunction film disinfected by screen LED photocatalysis, preparation method and application
CN113903859A (en) Method for preparing perovskite layer by dry method and perovskite type solar device
CN206531169U (en) Wind wheel component, air conditioner room unit and air conditioner
KR20120044691A (en) Method for preparing of tion photocatalyst

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20171222