CN107503108A - The preparation method and equipment of novel environment friendly is seamless wall cloth - Google Patents
The preparation method and equipment of novel environment friendly is seamless wall cloth Download PDFInfo
- Publication number
- CN107503108A CN107503108A CN201610412543.3A CN201610412543A CN107503108A CN 107503108 A CN107503108 A CN 107503108A CN 201610412543 A CN201610412543 A CN 201610412543A CN 107503108 A CN107503108 A CN 107503108A
- Authority
- CN
- China
- Prior art keywords
- wall cloth
- seamless wall
- seamless
- injection
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M10/00—Physical treatment of fibres, threads, yarns, fabrics, or fibrous goods made from such materials, e.g. ultrasonic, corona discharge, irradiation, electric currents, or magnetic fields; Physical treatment combined with treatment with chemical compounds or elements
- D06M10/04—Physical treatment combined with treatment with chemical compounds or elements
- D06M10/06—Inorganic compounds or elements
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M11/00—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising
- D06M11/32—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with oxygen, ozone, ozonides, oxides, hydroxides or percompounds; Salts derived from anions with an amphoteric element-oxygen bond
- D06M11/36—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereof; Such treatment combined with mechanical treatment, e.g. mercerising with oxygen, ozone, ozonides, oxides, hydroxides or percompounds; Salts derived from anions with an amphoteric element-oxygen bond with oxides, hydroxides or mixed oxides; with salts derived from anions with an amphoteric element-oxygen bond
- D06M11/46—Oxides or hydroxides of elements of Groups 4 or 14 of the Periodic System; Titanates; Zirconates; Stannates; Plumbates
Abstract
New antistatic seamless wall cloth, automatical cleaning ability and the method and apparatus for possessing the ability of purifying the air of a room are improved based on ion beam technology the invention discloses a kind of, wherein, this method is to utilize metal vacuum steam plasma source method (MEVVA) on seamless wall cloth surface, layer of metal element is injected for its surface, the metallic element of injection is Ti.Equipment includes vacuum system, reel system and ion source system.By implementing the present invention, wall cloth has preferable antistatic effect and good automatical cleaning ability, while TiO caused by injection2Nano microcrystalline can be under sunshine irradiation in decomposition chamber noxious material, play the effect to purify the air of a room.
Description
Technical field
The present invention relates to beam material surface modifying technology field, more particularly to seamless wall cloth surface method for implanting and equipment
Technical background
Seamless wall cloth is one kind of wall paper, also referred to as seamless wall cloth, is a new wall paper product of domestic-developed in recent years, it
It is to be designed according to the height of indoor wall, the wall paper that can be integrally pasted by the girth of indoor wall, general breadth is at 2.7 meters
Seamless wall cloth is referred to as to 3.10 meters of wall papers." seamless " i.e. integral construction, it can be cut surely according to room girth, wall paper breadth
More than or equal to room height, a room is pasted with a piece of cloth, without splicing.It is seamless paste, third dimension is strong, good hand touch,
Decorative effect presents, is grease proofing, antifouling, dust-proof, anti-wall splits, and the various functions such as easily arranges.
But although existing seamless wall cloth preceding working procedure is especially added with soil resistant finish technique, but overall anti-static ability or bad,
Wall cloth is caused to be contaminated in northern dry weather adsorption micronic dust, and as people increasingly pay attention to home environment, can
Possesses the development trend that the product of toxic organic compound function in decomposition chamber turns into now wall cloth.
The content of the invention
In view of this, the first purpose of the embodiment of the present invention is the metal vacuum steam plasma source in coupled ion beam technology
(MEVVA) a kind of antistatic seamless wall cloth of brand-new raising, automatical cleaning ability are proposed and possesses the ability of purifying the air of a room
Method and apparatus.
The beneficial effects of the invention are as follows:By injecting metal Ti elements on seamless wall cloth surface, its surface be not easy to adhere to microparticle,
If any common dust, can be brushed lightly with feather duster can remove;Slight is dirty, is cleaned with white wet towel
Remove;Severe it is dirty, be stained with some neutral abluents with white wet towel and clean, it is basic to remove totally, and holding fabric is original
State forms anatase TiO simultaneously as injection Ti elements on wall cloth top layer2It is nanocrystalline, can be in the presence of illumination
Toxic organic compound in decomposition chamber, plays a part of that purifies the air of a room
In certain embodiments, the seamless wall cloth injection technique includes:Using metal vacuum steam plasma source (MEVVA),
Ti is injected to the substrate layer;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, implantation dosage
For 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm.
In certain embodiments, described device includes:
Two sets of injection devices, for using metallic vapour ion gun (MEVVA), metal ion to be carried out to the wall cloth basalis
Injection;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is
1×1015~5 × 1017/cm2, injection depth is 70~420nm;
Relative to prior art, various embodiments of the present invention have the advantage that:
What the 1st, the embodiment of the present invention proposed improves antistatic seamless wall cloth, automatical cleaning ability based on ion beam technology and possesses clean room
The method and apparatus of interior ability of air, injected by the metallic element that high-energy is carried out to wall cloth, make base material sub-surface atom
The pinning Rotating fields mixed with injection metal formation metal-matrix atom, " pinning layer " structure and substrate so formed
The adhesion of layer is all very good, service life length;
2nd, TiO can be formed in the pinning Rotating fields of the seamless wall cloth of Ti ion implantings2Nanocrystalline, it is good photocatalyst material,
Organic matter that can rapidly in decomposition chamber under light conditions, compared to adding photocatalyst material by chemical method now,
Its this method is grown in wall cloth body, using effect and life-span can greatly enhance, meanwhile, wall cloth is not influenceed in itself
Appearance.
It should be noted that for foregoing embodiment of the method, in order to be briefly described, therefore it is all expressed as to a series of action
Combination, but those skilled in the art should know, the present invention is not limited by described sequence of movement, because according to this
Invention, some steps can use other orders or carry out simultaneously secondly, and those skilled in the art should also know, explanation
Embodiment described in book belongs to preferred embodiment, and involved action is not necessarily necessary.
Brief description of the drawings
Fig. 1 is that the embodiment of the present invention is based on the antistatic seamless wall cloth of ion beam technology raising, automatical cleaning ability and possesses purification
The method flow schematic diagram of room air ability;
Fig. 2 is seamless wall cloth structural representation provided in an embodiment of the present invention;
Fig. 3 is the structural representation of MEVVA injected systems provided in an embodiment of the present invention;
Fig. 4 is the comparison of seamless wall cloth surface resistivity before and after the processing;
XRD analysis result after Fig. 5 Ti ion implantings are seamless wall cloth;
Sunshine declines the result of solution methyl orange before and after treatment for Fig. 6 is seamless wall cloth.
Description of reference numerals
200 seamless wall cloth substrates
210 metal pinning layers
301 vacuum chambers
302 bleeding points
303 receive wall cloth rotary shaft
304 vacuum chamber heating rods
305 put wall cloth rotary shaft
306 cooling rotary shafts
307 No. 1 MEVVA ion guns
308 No. 2 MEVVA ion guns
309 MEVVA ion source cathodes
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely retouched
State, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on the present invention
In embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made,
Belong to the scope of protection of the invention
It should be noted that in the case where not conflicting, the feature in the embodiment of the present invention and embodiment can be mutually combined.
Below in conjunction with the accompanying drawings, each preferred embodiment of the present invention is described further:
Embodiment of the method
1. early stage is handled:
Seamless wall cloth base material is placed in vacuum drying oven and is heated to 150 DEG C and carries out baking 12h.
2nd, prepared by metal implanted layer:
Seamless wall cloth base material 200 is fixed on circular rotating shaft 305, the other end is fixed on circular rotating shaft 303, and centre is placed in cold
But axle 306, open ion gun and injected.The pure Ti that ion gun is purity 99.9% is injected, injection condition is:Vacuum 1
×10-3~6 × 10-3Pa, inject arc voltage:50~70V.
It is pointed out that in S100, metallic element is using Ti.Injecting voltage is 4~80kV, and beam intensity is
1~80mA (contains end value), and implantation dosage is 1 × 1015~5 × 1017/cm2(containing end value), injection depth are 70~420nm
(containing end value), worked simultaneously for two sets of MEVVA systems to ensure the processing height of the seamless wall cloth in longitudinal direction during injection.
Apparatus embodiments
To realize the preparation method of above-mentioned seamless wall cloth, based on the various embodiments described above, the present embodiment proposes a kind of seamless wall cloth of ion
Ion implantation device, the equipment include following device:
1st, injection device
Wherein, injection device is used to utilize MEVVA ion guns (two sets of injected systems), injects metal to the wall cloth substrate
Element, form pinning layer
It should be noted that MEVVA ion guns mainly produce area by plasma and ion beam draw-out area forms, plasma
It is exactly to be carried using caused by MEVVA ion guns to produce area i.e. metal vapor vacuum arc region of discharge .MEVVA ion implantings
Can ion beam bombardment material surface, ion implanting is carried out to substrate surface, so as to change the physics of material surface, chemical property
Process
B) coiler device, the stainless rotating steel shaft that three root longs are 1.5 meters is configured to, front and rear two rotating shafts drive for motor, and centre is
Cooling shaft
Fig. 4, Fig. 5 and Fig. 6 are can refer to here to be illustrated to the antistatic and photo-catalysis capability performance for handling seamless wall cloth
What Fig. 4 can will be apparent that sees, the seamless wall cloth surface conductivity after Ion Beam Treatment can strengthen, and this is to seamless wall cloth
Antistatic effect has important influence, and it can significantly be weakened to micro- in air by reducing the charge number on seamless wall cloth surface
The adsorption capacity of grain, so as to remain the clean and tidy and clean of wall cloth.Fig. 5 is that wall cloth passes through the XRD spectra after ion implanting
(5×1016/cm2), significantly there is a small amount of titanium dioxide anatase peak such as (101) and (200) face in spectrogram.Rutile titania
The appearance of ore deposit shows the ability that there is seamless wall cloth light to decompose toxic organic compound, and the forbidden band of anatase is 3.2eV, can be absorbed
388nm light produces electronics and hole pair, hole, and there is strong oxidation performance oxidation of organic compounds it is become carbon dioxide and water,
It is seamless wall cloth degraded methyl orange solution before and after ion implanting that there is electronics strong reducing property, which can reduce some harmful ions Fig. 6,
Empirical curve, it is respectively 0,1 × 10 to list three implantation dosages in figure16And 5 × 1016/cm2, ordinate is methyl orange
Absorbance, abscissa be methyl orange degradation time, it is evident that the seamless wall cloth through Ti ion implantings has obvious photooxidation
Change ability.It is obvious that seamless wall cloth, after the processing of MEVVA ion implant systems, wall cloth possesses good antistatic effect,
It is provided simultaneously with automatical cleaning ability and possesses the ability of purifying the air of a room.
Claims (6)
1. a kind of improve antistatic seamless wall cloth, automatical cleaning ability and the method for possessing the ability of purifying the air of a room using ion implantation technique.
2. the ion implantation device for seamless wall cloth surface deposited hydrophobic film layer described in right 1.
3. metal injection technique according to claim 1, it is characterised in that:The basalis is seamless wall cloth.
4. metal injection technique according to claim 3, it is characterised in that:The metallic element is Ti, and its injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm.
5. the equipment according to claim 1 that ion implanting is carried out on wall cloth, it is characterised in that including:
A) injection device, it is configured to utilize two sets of metal vapor vacuum arc (MEVVA) systems, cathode size is diameter 100mm, injects metal Ti elements to the wall cloth substrate surface using the MEVVA ion guns, forms metal implanted layer;Wherein, Ti injecting voltage is 4~80kV, and beam intensity is 1~80mA, and implantation dosage is 1 × 1015~5 × 1017/cm2, injection depth is 70~420nm, and beam spot diameter, size is 0.8 meter.
B) coiler device, it is 1.5 meters of stainless rotating steel shaft to be configured to three root longs, and front and rear two rotating shafts are motor driving, a diameter of 0.1 meter, and centre is cooling shaft, a diameter of 0.2 meter.
Improve that seamless wall cloth is antistatic and the method for automatical cleaning ability 6. a kind of, it is characterised in that be provided with using the seamless wall cloth of environment-friendly type for injecting Ti on wall cloth and preparing described in any one of claim 1 to 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610412543.3A CN107503108A (en) | 2016-06-14 | 2016-06-14 | The preparation method and equipment of novel environment friendly is seamless wall cloth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610412543.3A CN107503108A (en) | 2016-06-14 | 2016-06-14 | The preparation method and equipment of novel environment friendly is seamless wall cloth |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107503108A true CN107503108A (en) | 2017-12-22 |
Family
ID=60678439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610412543.3A Pending CN107503108A (en) | 2016-06-14 | 2016-06-14 | The preparation method and equipment of novel environment friendly is seamless wall cloth |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107503108A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1278032A (en) * | 1999-06-17 | 2000-12-27 | 中国科学院化学研究所 | Antistatic fiber fabrics, and the prepn. method and use thereof |
CN104372295A (en) * | 2014-09-23 | 2015-02-25 | 北京师范大学 | Making methods and apparatuses of flexible substrate circuit board and metal pinning layer |
-
2016
- 2016-06-14 CN CN201610412543.3A patent/CN107503108A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1278032A (en) * | 1999-06-17 | 2000-12-27 | 中国科学院化学研究所 | Antistatic fiber fabrics, and the prepn. method and use thereof |
CN104372295A (en) * | 2014-09-23 | 2015-02-25 | 北京师范大学 | Making methods and apparatuses of flexible substrate circuit board and metal pinning layer |
Non-Patent Citations (1)
Title |
---|
路艳华、林杰著: "《壳聚糖及纳米材料在榨蚕丝功能改性中的应用》", 31 August 2012, 中国纺织出版社 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wang et al. | Phosphorous doped carbon nitride nanobelts for photodegradation of emerging contaminants and hydrogen evolution | |
CN203152561U (en) | Sterilization and dust prevention mask | |
Qu et al. | Controllable synthesis of a sponge-like Z-scheme N, S-CQDs/Bi2MoO6@ TiO2 film with enhanced photocatalytic and antimicrobial activity under visible/NIR light irradiation | |
CN1914131A (en) | Method for cleaning a substrate | |
CN105780084A (en) | Preparation method of long-pipe diameter TiO2 nanotube array and application of long-pipe diameter TiO2 nanotube array | |
Zuo et al. | Construction of visible light driven silver sulfide/graphitic carbon nitride pn heterojunction for improving photocatalytic disinfection | |
Tsai et al. | DC-pulse atmospheric-pressure plasma jet and dielectric barrier discharge surface treatments on fluorine-doped tin oxide for perovskite solar cell application | |
Naghibi et al. | Exploring a new phenomenon in the bactericidal response of TiO2 thin films by Fe doping: Exerting the antimicrobial activity even after stoppage of illumination | |
US11572285B2 (en) | Self-decontaminating antimicrobial compositions, articles, and structures, and methods of making and using the same | |
Wang et al. | Photoelectrocatalytic removal of organic dyes and Cr (VI) ions using Ag3PO4 nanoparticles sensitized TiO2 nanotube arrays | |
CN106086820A (en) | A kind of preparation method of the fluorinated graphene composite being loaded with nanometer silver | |
CN107503108A (en) | The preparation method and equipment of novel environment friendly is seamless wall cloth | |
KR101350166B1 (en) | Apparatus and method for fabricating anti-microbial air filter media and anti-microbial air filter media | |
KR102581602B1 (en) | a air cleaner using low temperature plasma | |
JP2013530923A (en) | Doped material | |
CN104451955B (en) | Metal or metal oxide with hierarchical structure and preparation method of metal or metal oxide | |
CN107715895B (en) | ZnO/Ag/Sb2S3Preparation method of photocatalyst material | |
Park et al. | Comparison of Electrochemical Luminescence Characteristics of Titanium Dioxide Films Prepared by Sputtering and Sol–Gel Combustion Methods | |
JP2995250B2 (en) | A method for plasma spraying titanium oxide powder on a substrate and a product having a plasma sprayed coating. | |
TW201420182A (en) | Transition metal compound-loaded titanium oxide | |
CN107892380B (en) | Device and method for eliminating nitrate in underground water | |
CN111116054B (en) | Red phosphorus/zinc oxide heterojunction film disinfected by screen LED photocatalysis, preparation method and application | |
CN113903859A (en) | Method for preparing perovskite layer by dry method and perovskite type solar device | |
CN206531169U (en) | Wind wheel component, air conditioner room unit and air conditioner | |
KR20120044691A (en) | Method for preparing of tion photocatalyst |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171222 |