CN107492490B

CN107492490B - Film forming method for semiconductor device, film forming method for aluminum nitride, and electronic apparatus

Info

Publication number: CN107492490B
Application number: CN201610407581.XA
Authority: CN
Inventors: 董博宇; 郭冰亮; 王军; 耿玉洁; 马怀超
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2016-06-12
Filing date: 2016-06-12
Publication date: 2020-03-31
Anticipated expiration: 2036-06-12
Also published as: CN107492490A; TW201742936A; TWI626327B

Abstract

The invention discloses a film forming method of a semiconductor device, an aluminum nitride film forming method of a semiconductor device, and an electronic apparatus. The film forming method of a semiconductor device of the present invention includes performing a sputtering process including the steps of: loading the substrate into the chamber and placing the substrate on a bearing base in the chamber; performing a heating process on the chamber in a state where the substrate is loaded into the chamber, and heating a temperature inside the chamber to be higher than or equal to a predetermined temperature; performing main sputtering on the substrate by using a target material arranged in the cavity so as to form a thin film on the substrate; the substrate is carried out of the chamber. The film forming method of the semiconductor equipment, the aluminum nitride film forming method of the semiconductor equipment and the electronic device can improve the quality of the film, have the characteristics of simple manufacturing process, low manufacturing cost and the like, can avoid the problem that particles generated in the process of transferring the substrate to a sputtering chamber after the substrate is heated in other heating chambers fall on the substrate, and achieve the purpose of improving the efficiency of the electronic device.

Description

Film forming method for semiconductor device, film forming method for aluminum nitride, and electronic apparatus

Technical Field

The present invention relates to a semiconductor process and a device manufactured by the process, and more particularly, to a film formation method for a semiconductor device, an aluminum nitride film formation method for a semiconductor device, and an electronic device.

Background

Physical Vapor Deposition (PVD) sputtering process is widely used in semiconductor integrated circuits, Light Emitting Diodes (LEDs), solar cells, displays and the like. In a process chamber of a PVD sputtering apparatus, a high power dc power source is generally connected to a sputtering target, and a working gas in a reaction chamber is excited into a plasma (plasma) by the dc power source and attracts ions in the plasma to bombard the sputtering target, so that a material of the target is sputtered and deposited on a substrate such as a wafer. Different application fields usually have different requirements on process parameters such as sputtering power, sputtering rate, etc., but the efforts to improve the film quality and increase the equipment throughput are basically very clear.

Disclosure of Invention

In order to solve the above-mentioned problems, the present invention provides a film forming method for a semiconductor device, an aluminum nitride film forming method for a semiconductor device, and an electronic apparatus, wherein an aluminum nitride film is formed by sputtering, thereby achieving the purposes of improving the film forming quality of the aluminum nitride film and increasing the productivity.

Some embodiments of the present invention provide a film formation method of a semiconductor device, including the following steps. First, a sputtering process is performed. The sputtering process comprises the following steps: loading the substrate into the chamber and placing the substrate on a bearing base in the chamber; performing a heating process on the chamber in a state where the substrate is loaded into the chamber, and heating a temperature inside the chamber to be higher than or equal to a predetermined temperature; then, performing main sputtering on the substrate by using a target material arranged in the cavity to form a film on the substrate, wherein the preset temperature is the crystallization temperature of the film; thereafter, the substrate is carried out of the chamber.

Some embodiments of the present invention provide an aluminum nitride film forming method of a semiconductor device, including: firstly, a sputtering process is carried out, wherein the sputtering process comprises the following steps: loading the substrate into the chamber and placing the substrate on a bearing base in the chamber; performing a heating process on the chamber in a state where the substrate is loaded into the chamber, and heating a temperature inside the chamber to be higher than or equal to a predetermined temperature; then, introducing nitrogen-containing gas and inert gas into the chamber, and carrying out main sputtering on the substrate by utilizing an aluminum-containing target material arranged in the chamber to form an aluminum nitride film on the substrate, wherein the preset temperature is the crystallization temperature of the aluminum nitride film; thereafter, the substrate is carried out of the chamber.

Some embodiments of the present invention provide an electronic device including a substrate, an aluminum nitride buffer layer, and a gallium nitride layer. The aluminum nitride buffer layer is located on the substrate and obtained by the film forming method of the semiconductor device provided by some embodiments of the invention, and the half-height width of the X-ray diffraction analysis (002) of the aluminum nitride buffer layer is less than or equal to 100 arcsec. The gallium nitride layer is positioned on the aluminum nitride buffer layer.

In the film forming method of the semiconductor device and the aluminum nitride film forming method of the semiconductor device provided by the invention, the heating process performed in the chamber for performing the main sputtering can generate an activating and/or degassing (degas) effect on the substrate before the main sputtering, so that the quality of a film formed on the substrate by sputtering in the following process is improved. In addition, because the substrate is subjected to the heating process and the sputtering film formation in the same chamber, a heating chamber does not need to be additionally arranged, so that the volume of the equipment can be reduced, and the related cost can be reduced. On the other hand, the film forming method of the semiconductor device and the aluminum nitride film forming method of the semiconductor device of the invention can also simplify the manufacturing process and avoid the problem that particles generated in the process of transferring the substrate to the sputtering chamber after the substrate is heated in other heating chambers fall on the substrate. Furthermore, the electronic device provided by the invention has the characteristics of simple manufacturing process, low manufacturing cost and the like because the aluminum nitride buffer layer and the gallium nitride layer are formed by adopting the film forming method of the semiconductor device provided by the invention, and the problem of pollution caused by particles falling on the substrate can be avoided.

Drawings

FIG. 1 is a schematic flow chart of a film formation method of a semiconductor apparatus according to some embodiments of the present invention;

FIG. 2A is a schematic view of a film formation method of a semiconductor device according to some embodiments of the present invention;

FIG. 2B is a schematic view of a film formation method of a semiconductor device according to some embodiments of the present invention;

FIG. 2C is a schematic view of a film formation method of a semiconductor device according to some embodiments of the present invention;

FIG. 3 is a schematic view of an electronic device according to some embodiments of the inventions;

FIG. 4 is a schematic diagram showing the comparison of the X-ray diffraction full width at half maximum of a GaN film and the presence of oxygen gas introduced during the formation of an aluminum nitride film according to some embodiments of the present invention;

FIG. 5 is a graph illustrating the relationship between the X-ray diffraction full width at half maximum and the light transmittance of an aluminum nitride film to oxygen introduced during the formation of the aluminum nitride film according to some embodiments of the present invention; and

FIG. 6 is a flow chart illustrating an aluminum nitride film forming method of a semiconductor device according to some embodiments of the present invention.

[ notation ] to show

20 sputtering device

21 chamber

21S inner wall

22 bearing base

23 tray

24 shielding disc

25 shield disc library

26 Heat insulation ring

27 cover ring

28A lower end cover

28B Upper end cover

29 magnetron

30 electronic device

31 base plate

32 aluminum nitride buffer layer

33 gallium nitride layer

33N N type doped gallium nitride layer

33P P type doped gallium nitride layer

34 quantum well layer

100. 200 method

110. 121, 122, 130, 140

210. 220, 230 steps

SR sputtering process

T target material

Detailed Description

In order to make the objects, aspects and advantages of the present invention more apparent, a film forming method for a semiconductor device, an aluminum nitride film forming method for a semiconductor device, and an electronic apparatus according to the present invention will be described below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

The film forming method of the semiconductor device of the invention utilizes the heating process carried out in the chamber for carrying out the main sputtering, the heating process is to heat the temperature in the chamber to a preset temperature, thereby generating the activation and/or exhaust effect on the substrate, wherein the preset temperature is the crystallization temperature of the film formed on the substrate by sputtering, thus being helpful for improving the quality of the film formed on the substrate by sputtering.

In the film forming method of the semiconductor device, the substrate is subjected to the heating process and the sputtering film forming in the same chamber, so that a heating chamber does not need to be additionally arranged, the volume of the device can be further reduced, the related cost can be reduced, and the problem that particles generated in the process of transferring the substrate to the sputtering chamber after the substrate is heated in other heating chambers fall on the substrate can be avoided.

In the film forming method of the semiconductor device, the substrate is loaded into the chamber and the shielding plate is positioned between the substrate and the target when the target is used for pre-sputtering, so that the influence of the pre-sputtering on the substrate can be avoided. In addition, the film forming method of the semiconductor device does not need to open the chamber after the heating process is finished, so that the stability of the environment in the chamber can be improved, and the film forming method has positive help on simplifying the manufacturing process and improving the film forming quality.

In the film forming method of the semiconductor equipment, after the substrate is loaded, the chamber is higher than the crystallization temperature of the film to be formed in the heating process, the pre-sputtering and the main sputtering, so that the effects of activating the substrate, exhausting (degas) the substrate, improving the sputtering film forming quality, prolonging the service life of the target material and the like can be achieved in the same chamber.

The aluminum nitride film formed by the method has better quality, and the epitaxial growth (epitaxiy) quality of a gallium nitride layer formed on the aluminum nitride film subsequently is improved. The aluminum nitride film and the gallium nitride layer can be applied to electronic devices such as light-emitting diode devices, the gallium nitride layer with improved film forming quality can be used for improving the electrical performance of the electronic devices, and the aluminum nitride film with higher light transmittance formed by the method can also be used for improving the light-emitting performance of the light-emitting diode devices.

Fig. 1 is a schematic flow chart of a film formation method of a semiconductor device according to some embodiments of the present invention, and as shown in fig. 1, some embodiments of the present invention provide a film formation method 100 of a semiconductor device, and the method 100 includes a plurality of steps. First, a sputtering process SR is performed, which includes the following

steps

110, 121, 122, 130, and 140. At step 110, a substrate is loaded into a chamber and placed on a load-bearing pedestal within the chamber. At step 121, the chamber is subjected to a heating process to a temperature greater than or equal to a predetermined temperature. At step 122, pre-sputtering is performed with a target disposed within the chamber. At step 130, the substrate is subjected to main sputtering by using a target to form a thin film on the substrate, wherein the predetermined temperature of the heating process is a crystallization temperature of the thin film. At step 140, the substrate with the thin film formed thereon is removed from the chamber. It should be noted that, in some embodiments, the step 122 may also be omitted as needed, that is, the pre-sputtering may be omitted as needed, but not limited thereto.

The method 100 is described as an example, and the present invention is not limited to the method 100, and other required additional steps may be performed before, after and/or in the method 100, and the steps described in the method 100 may be replaced, deleted or changed in order in other embodiments. In addition, the term "step" used in the present specification is not limited to a single action, and the term "step" may include a single action, operation, or technique, or may be a set of multiple actions, operations, and/or techniques.

Fig. 2A to 2C are schematic views illustrating a film formation method of a semiconductor device according to some embodiments of the present invention. As shown in fig. 2A and fig. 1, some embodiments of the present invention provide a film forming method 100 of a semiconductor device, and the method 100 includes a plurality of steps. First, a sputtering apparatus 20 may be provided. The sputtering apparatus 20 includes a chamber 21, a carrying base 22, and a shield disk 24. In some embodiments, the sputtering apparatus 20 may further include a shield disk magazine 25 storing the shield disk 24, an insulating ring 26, a cover ring 27, a lower end cap 28A, an upper end cap 28B, and a magnetron 29, wherein the shield disk magazine 25 penetrates through the inner wall 21S of the chamber 21 to communicate with the internal environment of the chamber 21, but not limited thereto. In other embodiments of the present invention, other desired components may also be provided within and/or outside of the sputtering apparatus 20, as desired. Then, a sputtering process SR is performed, which includes step 110, step 121, step 122, step 130, and step 140. At step 110, the substrate 31 is loaded into the chamber 21 of the sputtering apparatus 20 and placed on the load-bearing pedestal 22 within the chamber 21. In some embodiments, one or more substrates 31 may be placed on a tray 23, and the tray 23 with the substrates 31 placed thereon may be loaded into the chamber 21 and placed on the load-bearing base 22 by, for example, a robot. In other embodiments, the substrate 31 may be placed on the supporting base 22 without passing through the tray 23.

Then, at step 121, the chamber 21 is subjected to a heating process. In some embodiments, the heating process may include heating the environment inside the chamber 21 and the substrate 31 to activate and/or degas (purge) the substrate 31 and/or the tray 23, so that the temperature inside the chamber 21 is preferably higher than or equal to a predetermined temperature, for example, the temperature inside the chamber 21 may be higher than 400 degrees celsius, preferably between 400 degrees celsius and 800 degrees celsius, or more preferably between 500 degrees celsius and 700 degrees celsius, but not limited thereto, so that the substrate 31 may reach the above temperature range after being heated to effectively achieve the desired activation effect. In some embodiments, the heating process is to heat the chamber 21 to a temperature higher than or equal to a predetermined temperature, wherein the predetermined temperature is a crystallization temperature of a film (e.g., an aluminum nitride film) formed by performing the main sputtering, so that the temperature of the substrate 31 and the chamber 21 is higher than the crystallization temperature of the film (e.g., the aluminum nitride film) formed by performing the main sputtering, thereby generating a lattice rearrangement effect on the substrate 31 and improving a lattice arrangement of the film formed by performing the main sputtering, which is helpful for improving the quality of the film formed by performing the main sputtering. For example, the heating process may heat the chamber 21 to a temperature between 400 degrees celsius and 800 degrees celsius, and preferably between 650 degrees celsius and 800 degrees celsius, so as to be higher than the crystallization temperature of the film (e.g., the aluminum nitride film) formed by the main sputtering (the crystallization temperature of the aluminum nitride is about 550 degrees celsius), but not limited thereto. In other words, the atmosphere in the chamber 21 is continuously heated to a temperature higher than or equal to the crystallization temperature of the thin film sputtered by the main sputtering, thereby positively contributing to the film formation quality of the main sputtering.

In some embodiments, the substrate 31 may be a single material substrate or a composite material substrate formed of sapphire, silicon carbide (SiC) or other suitable materials, such as a silicon substrate, a silicon-on-insulator (SOI) substrate, a glass substrate or a ceramic substrate, and the tray 23 is made of a material that can withstand a heating process, such as silicon carbide (SiC) or molybdenum, but not limited thereto. The heating temperature of the heating process may be adjusted according to the material of the substrate 31, and the chamber 21 and the components inside the chamber 21 are preferably made of a material that can withstand the heating process, such as molybdenum metal or other metal or non-metal materials that can withstand the heating process, so that the heating process can be performed without quality change or deformation. The heating process can activate the substrate 31 and exhaust the substrate 31 and/or the tray 23, and the gas generated by exhausting the substrate 31 and/or the tray 23 during the heating process can be exhausted from the chamber 21 before the main sputtering process, so that the gas exhausted from the substrate 31 and/or the tray 23 can be prevented from affecting the main sputtering process. In addition, it is preferable that no gas is introduced into the chamber 21 during the heating process, but the heating process is not limited thereto.

Then, as shown in fig. 2B and fig. 1, at step 122, the pre-sputtering is performed by using the target T disposed in the chamber 21, and the shielding plate 24 in the chamber 21 is located between the target T and the substrate 31 during the pre-sputtering. In some embodiments, the shield disk 24 may be placed in the shield disk magazine 25 before pre-sputtering, the shield disk 24 is moved from the shield disk magazine 25 into the chamber 21 between the target T and the substrate 31 before pre-sputtering, and then pre-sputtering is performed, and the shield disk 24 is also placed between the target T and the substrate 31 during pre-sputtering, thereby preventing material of the target T from being formed on the substrate 31 by pre-sputtering. It should be noted that, in some embodiments, at least a portion of the heating process may be performed simultaneously with the pre-sputtering, so as to achieve the effect of reducing the overall process time, but the invention is not limited thereto. The process time of the heating process may be adjusted as needed, and may be, for example, between 1 minute and 10 minutes, but not limited thereto.

Thereafter, as shown in fig. 2C and fig. 1, at step 130, the shielding plate 24 is removed and the substrate 31 is subjected to main sputtering using the target T to form a thin film on the substrate 31. The process parameters of the pre-sputtering and the main sputtering are at least partially the same, so that the condition in the chamber 21 tends to be stable before the main sputtering is performed, but not limited thereto. For example, the gas introduced into the chamber 21 during the pre-sputtering may be the same as the gas introduced into the chamber 21 during the main sputtering, and the sputtering power applied to the target T during the pre-sputtering may also be the same as the sputtering power applied to the target T during the main sputtering, but not limited thereto. In some embodiments, the substrate 31 is subjected to the heating process and the main sputtering in the same chamber 21 and on the same carrier base 22, but the invention is not limited thereto. In addition, the heating process may start heating the substrate 31 before the pre-sputtering and the main sputtering, and may continue to heat while the main sputtering is performed to maintain a desired main sputtering process temperature. In some embodiments, the temperature of the substrate 31 and the chamber 21 may be maintained between 400 degrees celsius and 800 degrees celsius through a heating process during the whole sputtering process SR, so as to ensure the film formation quality of the main sputtering. For example, before step 110, i.e., before loading the substrate 31 into the chamber 21, the temperature inside the chamber 21 may be maintained at, for example, 500 degrees celsius, and after loading the substrate 31 into the chamber 21, the substrate 31 may be moved to a heating position by the susceptor 22 to perform a heating process, for example, heating at a heating temperature of 650 degrees celsius for several minutes; then, the substrate 31 is moved to the relatively lower position so that the shielding plate 24 can move into the chamber 21 and be located between the target T and the substrate 31 for pre-sputtering (as shown in the situation of fig. 2B); after the pre-sputtering is completed, the shield plate 24 is removed and the substrate 31 is moved to the process position and then the main sputtering is performed (as shown in the state of fig. 2C); the temperature to which the heating assembly heats the chamber 21 during the pre-sputtering and the main sputtering may be maintained at 650 degrees celsius, for example, and the temperature may be lowered to 500 degrees celsius, for example, and the substrate 31 may be unloaded from the chamber 21 after the main sputtering is completed.

In some embodiments, the film formation method 100 of the semiconductor device may be used to form a non-metal film, a metal film, or a metal compound film. For example, when the thin film to be formed on the substrate 31 is aluminum nitride (AlN), the target T may be an aluminum-containing target such as a pure aluminum target or an aluminum nitride target, and the method 100 may be regarded as an aluminum nitride film forming method of a semiconductor device.

When the method 100 is used to form an aluminum nitride film, after the substrate 31 is loaded into the chamber 21, a pre-sputtering is performed (e.g., the situation shown in fig. 2B) using an aluminum-containing target (i.e., the target T) disposed in the chamber 21, wherein the shadow disk 24 is located between the aluminum-containing target (i.e., the target T) and the substrate 31 during the pre-sputtering; after the pre-sputtering, the shadow mask 24 is removed and the substrate 31 is subjected to main sputtering using an aluminum-containing target (i.e., target T) to form an aluminum nitride film on the substrate 31. In addition, in forming the aluminum nitride film, the main sputtering may include introducing a nitrogen-containing gas, an oxygen-containing gas, and an inert gas such as argon (Ar) into the chamber 21, and causing ions (e.g., Ar ions) generated from the inert gas to collide with an aluminum-containing target (i.e., the target T) to form the aluminum nitride film on the substrate 31, wherein the aluminum nitride film includes an oxygen-doped aluminum nitride film. Thus, the pre-sputtering may also include introducing a nitrogen-containing gas, an oxygen-containing gas, and an inert gas such as argon into the chamber 21, and allowing ions generated from the inert gas to impact the aluminum-containing target (i.e., the target T), thereby stabilizing the chamber 21 and cleaning the target T. In some embodiments, the flow rate of the nitrogen-containing gas, such as nitrogen, during the main sputtering and/or the pre-sputtering may range from 30 to 300 standard milliliters per minute (sccm), and preferably may range from 100sccm to 220 sccm; the flow rate of the inert gas such as argon can be between 15sccm and 100sccm, and preferably can be between 20sccm and 70 sccm; the flow rate of the oxygen-containing gas, such as oxygen, can be in the range of 0.5sccm to 10sccm, and preferably can be in the range of 0.5sccm to 5sccm, but is not limited thereto. In addition, the sputtering power applied to the target T during the main sputtering and/or the pre-sputtering may include a pulsed dc power source with a power range of 2500 w to 4000 w, and the power range may preferably be between 2800 w to 3500 w, but is not limited thereto. In some embodiments, the power supply to the target T may be stopped after the pre-sputtering and before the main sputtering, and the power supply to the target T may be started again when the substrate 31 is moved to the process station for the main sputtering, so as to increase the service life of the target T, but not limited thereto. In addition, the oxygen-containing gas may be introduced into the front stage, the middle stage, the rear stage of the main sputtering or the whole course of the main sputtering.

Then, at step 140, the substrate 31 formed with the thin film (e.g., the aluminum nitride thin film) is moved out of the chamber 21, thereby completing the sputtering process SR. In other words, in some embodiments, the one-time sputtering process SR refers to a process of loading the tray 23 on which the one or more substrates 31 are placed into the chamber 21, performing pre-sputtering, performing main sputtering on the one or more substrates 31 on the tray 23 to form a thin film, and then moving the tray 23 out of the chamber 21.

In addition, please refer to fig. 1, fig. 2C and fig. 3, wherein fig. 3 is a schematic view of an electronic device according to some embodiments of the present invention. As shown in fig. 1, 2C and 3, in some embodiments, the aluminum nitride film forming method 100 of the semiconductor apparatus may be used to form an aluminum nitride buffer layer 32 in an electronic device 30, such as a gallium nitride-based light emitting diode device (GaN-based LED). In some embodiments, the electronic device 30 may include a substrate 31, an aluminum nitride buffer layer 32, and a gallium nitride layer 33. An aluminum nitride buffer layer 32 is located on the substrate 31, and a gallium nitride layer 33 is located on the aluminum nitride buffer layer 32. An aluminum nitride buffer layer 32 may be formed on the substrate 31 by the method 100 described above, and a gallium nitride layer 33 may be formed on the aluminum nitride buffer layer 32. Because the lattice mismatch (lattice mismatch) and thermal mismatch (thermal mismatch) between the aluminum nitride buffer layer 32 and the substrate 31 (e.g., sapphire substrate) are relatively small, the aluminum nitride buffer layer 32 can be used to improve the quality of the gallium nitride layer 33 formed on the aluminum nitride buffer layer 32 by epitaxial growth, thereby achieving the effect of improving the performance of the electronic device 30. For example, the electronic device 30 may comprise a light emitting diode device or other suitable semiconductor electronic devices, and when the electronic device 30 is a light emitting diode device, the electronic device 30 may further comprise a quantum well layer 34 formed on the gallium nitride layer 33, in which case the gallium nitride layer 33 may be processed into an N-type doped gallium nitride layer 33N, and a P-type doped gallium nitride layer 33P may be further formed on the quantum well layer 34, but not limited thereto.

Please refer to fig. 1, fig. 3 and the following table 1. Table 1 shows the Full Width Half Maximum (FWHM) of the aluminum nitride buffer layer 32 and the gallium nitride layer 33 formed thereon by the above method compared with the FWHM of the aluminum nitride buffer layer and the gallium nitride layer formed thereon by other methods. In table 1, the aluminum nitride buffer layer 32 and the gallium nitride layer 33 thereon are formed in example 1 by the method 100, the aluminum nitride buffer layer and the gallium nitride layer thereon are formed by using mocvd in comparative example 1, and the aluminum nitride buffer layer and the gallium nitride layer thereon are formed by using RPD (Reactive plasma deposition) in comparative example 2. As is clear from table 1, the aluminum nitride buffer layer 32 and the gallium nitride layer 33 thereon having a good film formation quality can be obtained by the method for forming aluminum nitride of the present invention.

TABLE 1

Please refer to fig. 1, fig. 2C, fig. 3, fig. 4 and the following table 2. FIG. 4 is a schematic diagram showing the comparison of the X-ray diffraction full width at half maximum of a GaN film and the presence of oxygen gas introduced during the formation of an aluminum nitride film according to some embodiments of the present invention; table 2 shows the electrical effect of oxygen on the electronic device 30 when the aluminum nitride buffer layer 32 in the electronic device 30 was formed by sputtering. As shown in fig. 1, fig. 2C, fig. 3, fig. 4 and table 2, the introduction of oxygen during the main sputtering for forming the aluminum nitride buffer layer 32 can significantly improve the film formation quality (the X-ray diffraction full width at half maximum) of the gallium nitride layer 33 formed on the aluminum nitride buffer layer 32, and it can be seen from various electrical performances of the electronic device 30 (such as a light emitting diode device) that the introduction of oxygen during the main sputtering for forming the aluminum nitride buffer layer 32 can improve many electrical performances of the electronic device 30.

TABLE 2

Please refer to fig. 1, fig. 2C, fig. 3 and fig. 5. FIG. 5 is a graph illustrating the relationship between the X-ray diffraction full width at half maximum and the light transmittance of an aluminum nitride film to oxygen introduced during the formation of the aluminum nitride film according to some embodiments of the present invention. As shown in fig. 1, fig. 2C, fig. 3 and fig. 5, under the condition that the flow rate of the oxygen gas introduced into the chamber 21 during the main sputtering is about 1sccm, the light transmittance of the aluminum nitride film formed by increasing the time of introducing the oxygen gas is significantly improved, and the higher light transmittance is helpful for the light emitting performance when applied to the light emitting diode device, but on the other hand, the X-ray diffraction half-height width of the aluminum nitride film is increased by introducing too much oxygen gas. Therefore, the time and flow rate of oxygen gas introduced during the main sputtering are controlled to avoid the negative effect on the film-forming quality of the aluminum nitride film. Therefore, in some embodiments of the present invention, when the aluminum nitride buffer layer 32 is formed by the method 100 for forming an aluminum oxide film, the full width at half maximum (FWHM) of the X-ray diffraction analysis (002) of the aluminum nitride film (i.e., the aluminum nitride buffer layer 32) may be less than or equal to 100 arc seconds (arcsec), the full width at half maximum (FWHM) of the X-ray diffraction analysis (102) of the aluminum nitride film (i.e., the aluminum nitride buffer layer 32) may be less than or equal to 230 arc seconds (arcsec), the full width at half maximum (FWHM) of the X-ray diffraction analysis (002) of the gallium nitride layer 33 may be less than or equal to 110 arc seconds, and the full width at half maximum (FWHM) of the X-ray diffraction analysis (102) of the gallium nitride layer 33 may be less than or equal to 160 arc seconds, but not limited thereto.

The following description mainly details the differences between the embodiments, and the descriptions of the same parts are not repeated herein for the sake of simplicity. In addition, the same components in the embodiments of the present invention are denoted by the same reference numerals to facilitate the comparison between the embodiments.

Please refer to fig. 6, fig. 1 and fig. 2A. FIG. 6 is a flow chart illustrating an aluminum nitride film forming method of a semiconductor device according to some embodiments of the present invention. As shown in fig. 6, 1, and 2A, some embodiments of the present invention provide a method 200 for forming a film of a semiconductor device, where the method 200 includes a plurality of steps. At step 210, a coating process is performed, wherein the coating process includes flowing an inert gas such as argon into the chamber 21, applying power to the aluminum-containing target (i.e., the target T), dissociating the inert gas into ions (e.g., Ar ions), and striking the target T with the ions generated by the inert gas, so that the coating process may include cleaning the target T and/or making the thin film on the cover ring 27 and the upper cover 28B less prone to crack. In some embodiments, only argon is introduced during the coating process without introducing other gases, and the time of the coating process may be between 1 minute and 20 minutes, but not limited thereto. In some embodiments, the coating process may be performed at temperatures greater than 400 degrees celsius within the chamber 21, which may allow a relatively low power (e.g., 1000 watts) to be applied to the target T and/or may allow a relatively short coating process time to achieve the above-described results, and may thus extend the lifetime of the target T. It should be noted that, in the conventional film forming method, since the temperature in the chamber is lower than 350 ℃, the crystal grains of the target are small, which increases the probability of generating defects related to particles (particles), and the thin film on the cover ring, the upper cover, and other components is also easily cracked (crack) to increase the particle defects when the chamber is at a temperature lower than 350 ℃. In order to solve the particle problem, the conventional film forming method performs a coating process after continuously repeating a plurality of sputtering processes, and the conventional coating process must use high power for several tens of minutes due to the environment of less than 350 degrees celsius in the chamber, which not only increases the overall process time, but also shortens the service life (i.e., lifetime) of the target. In contrast, in the method of the present embodiment, since the chamber 21 is at a temperature greater than or equal to 400 ℃, crystal grains of the target T may be enlarged to reduce the generation of particle-related defects, and the films on the outer cover ring 27 and the top cover 28B are less prone to crack (crack), which also helps to improve the particle-related defect problem. That is, when the chamber 21 is at a temperature greater than or equal to 400 degrees celsius, the method 200 of the present embodiment not only can reduce the number and frequency of coating processes and shorten the overall process time, but also the coating process of the present embodiment only needs to be performed with low power, which is helpful for the service life of the target T.

Then, at step 220, the chamber 21 is subjected to a nitridation process. The gas introduced into the chamber 21 during the nitridation process may be the same as the gas introduced into the chamber 21 during the main sputtering, that is, the nitridation process may be performed by introducing an oxygen-containing gas, a nitrogen-containing gas, and an inert gas into the chamber 21, thereby stabilizing the gas conditions in the chamber 21 for the subsequent pre-sputtering and main sputtering, but not limited thereto.

After the coating process and the nitridation process, the sputtering process SR is continuously repeated a plurality of times at step 230, and the continuously performed sputtering process SR may constitute a batch sputtering process. The number of sputtering processes SR performed in the batch sputtering process may be between 15 and 30, but not limited thereto. After step 230, i.e., after the batch sputtering process is completed, the

above steps

220 and 230 can be performed. In other words, the coating process and the nitridation process may be performed before and/or after the batch sputtering process, the coating process may remove the products (e.g., aluminum nitride) generated on the surface of the target T after the multiple sputtering processes SR to achieve the effect of cleaning the target T, and the sidewall impedance of the chamber 21 after the multiple sputtering processes SR may be recovered, and the nitridation process may be used to stabilize the condition inside the chamber 21 after the coating process.

In summary, the film forming method of the semiconductor device according to the present invention is to perform a heating process on the substrate in the chamber for performing sputtering, wherein the heating process heats the temperature in the chamber to be higher than or equal to the crystallization temperature of the thin film to be formed, and the preheating chamber and the pre-cleaning chamber can be omitted by the heating process, thereby significantly reducing the cost of the device itself. In addition, the heating process can also improve the film forming quality, for example, when the heating process is used for forming the aluminum nitride film, the film forming quality of the aluminum nitride film can be improved, and the epitaxial growth quality of a gallium nitride layer formed on the aluminum nitride film subsequently is also improved. In addition, the pre-sputtering is performed by using the shielding plate under the condition that the substrate is loaded into the chamber, so that the condition of stable subsequent main sputtering can be achieved, the whole process time can be shortened, the effect of improving the productivity can be achieved, and the film thickness repeatability formed by each sputtering process can be improved due to the pre-sputtering, the coating treatment and/or the nitriding treatment. On the other hand, the high-quality aluminum nitride film formed by the method of the invention can be applied to electronic devices such as light emitting diode devices, the gallium nitride layer with improved film forming quality due to the aluminum nitride film can be used for improving the electrical performance of the electronic devices, and the aluminum nitride film with higher light transmittance formed by the method of the invention can also be used for improving the light emitting performance of the light emitting diode devices.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. A film formation method for a semiconductor device, comprising:

performing a sputtering process, the sputtering process comprising:

loading a substrate into a chamber and placing the substrate on a bearing base in the chamber;

performing a heating process on the chamber to heat a temperature inside the chamber to be higher than or equal to a predetermined temperature in a state where the substrate is loaded into the chamber;

performing main sputtering on the substrate by using a target arranged in the cavity so as to form a thin film on the substrate, wherein the preset temperature is the crystallization temperature of the thin film; and

the substrate is carried out of the chamber.

2. The method of claim 1, wherein the predetermined temperature is between 400 degrees celsius and 800 degrees celsius.

3. The method of claim 2, wherein the predetermined temperature is between 500 degrees celsius and 700 degrees celsius.

4. The method of claim 1, wherein the heating process has a process time of 1 minute to 10 minutes.

5. The method of claim 1, wherein a shadow disk within the chamber is positioned between the target and the substrate while the heating process is performed.

6. The method of claim 1, wherein the sputtering process further comprises:

and carrying out pre-sputtering by using the target before the main sputtering, wherein a shielding disc in the cavity is positioned between the target and the substrate when the pre-sputtering is carried out.

7. The method of claim 6, wherein at least a portion of the heating process is performed simultaneously with the pre-sputtering.

8. The method of claim 6, wherein the pre-sputtering is performed with the same gas being introduced into the chamber as the main sputtering is performed.

9. The method of claim 1, further comprising:

continuously and repeatedly carrying out the sputtering process for a plurality of times, wherein the continuously carried sputtering process forms a batch of sputtering process; and

before and/or after the batch sputtering process, performing a coating process, wherein the coating process comprises:

introducing inert gas into the chamber; and

ions formed from the inert gas strike the target.

10. The method of claim 1, further comprising:

before and/or after the batch sputtering process, a nitridation process is performed.

11. An aluminum nitride film forming method of a semiconductor device, comprising:

performing a sputtering process, the sputtering process comprising:

introducing nitrogen-containing gas and inert gas into the chamber, and performing main sputtering on the substrate by using an aluminum-containing target material arranged in the chamber to form an aluminum nitride film on the substrate, wherein the preset temperature is the crystallization temperature of the aluminum nitride film; and

the substrate is carried out of the chamber.

12. The method of claim 11, wherein the main sputtering comprises:

introducing an oxygen-containing gas into the chamber; and

and forming the aluminum nitride film on the substrate by using the aluminum-containing target, wherein the aluminum nitride film comprises an oxygen-doped aluminum nitride film.

13. The method of claim 12, wherein the oxygen-containing gas is introduced at a flow rate of 0.5 seem to 5 seem.

14. The method of claim 12, wherein the oxygen-containing gas is introduced at a front stage, a middle stage, a rear stage of the main sputtering, or all the way through the main sputtering.

15. The method of claim 11, wherein the predetermined temperature is between 400 degrees celsius and 800 degrees celsius.

16. The method of claim 15, wherein the predetermined temperature is between 500 degrees celsius and 700 degrees celsius.

17. The method of claim 11, wherein the heating process has a process time of 1 minute to 10 minutes.

18. The method of claim 11, wherein the sputtering process further comprises:

and performing pre-sputtering by using the aluminum-containing target before the main sputtering, wherein a shielding disc in the cavity is positioned between the aluminum-containing target and the substrate when the pre-sputtering is performed.

19. The method of claim 18, wherein at least a portion of the heating process is performed simultaneously with the pre-sputtering.

20. The method of claim 18, wherein the pre-sputtering is performed with the same gas being introduced into the chamber as the main sputtering is performed.

21. The method of claim 11, further comprising:

introducing inert gas into the chamber; and

ions generated from the inert gas impact the aluminum-containing target.

22. The method of claim 11, further comprising:

23. The method of claim 22, wherein the nitridation process is performed by flowing an oxygen-containing gas, a nitrogen-containing gas, and an inert gas through the chamber.

24. The method of claim 11 wherein the aluminum nitride film has an X-ray diffraction analysis (002) full width at half maximum of 100 arcsec.

25. An electronic device, comprising:

a substrate;

an aluminum nitride buffer layer which is provided on the substrate and obtained by the film formation method for a semiconductor device according to any one of claims 1 to 10, and has a full width at half maximum of X-ray diffraction analysis (002) of 100 arcsec or less; and

a gallium nitride layer on the aluminum nitride buffer layer.

26. The electronic device of claim 25, wherein the gallium nitride layer has an X-ray diffraction analysis (002) full width at half maximum of less than or equal to 110 arcsec.