CN107464599B - A kind of graphene doping transparent conductive oxide film of amorphous state-nanocomposite structure and preparation method thereof - Google Patents
A kind of graphene doping transparent conductive oxide film of amorphous state-nanocomposite structure and preparation method thereof Download PDFInfo
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- CN107464599B CN107464599B CN201710744530.0A CN201710744530A CN107464599B CN 107464599 B CN107464599 B CN 107464599B CN 201710744530 A CN201710744530 A CN 201710744530A CN 107464599 B CN107464599 B CN 107464599B
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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Abstract
A kind of graphene doping transparent conductive oxide film of amorphous state-nanocomposite structure and preparation method thereof, belongs to transparent flexible field of display technology.Adjustment average coordination counting method is adulterated and controlled using graphene, the technique for preparing graphene doped indium gallium zinc oxide film by sol-gal process, low in cost, high mobility transparent conductive oxide film is found, monolithic film membrane is prepared as nanocrystalline and amorphous mixing crystalline state.Operation of the present invention is simple, it is not easily introduced impurity, preparation temperature is low, preparation condition is easy to control, the graphene doping indium gallium zinc oxide transparent conductive film mobility of prepared nanocrystalline and amorphous composite construction is high, low in cost, response time is fast, has preferable flexibility and transparency, provides material support and process modification for transparent flexible display device.
Description
Technical field
The invention belongs to transparent flexible field of display technology, and in particular to a kind of stone of amorphous state-nanocomposite structure
Black alkene doping transparent conductive oxide film and preparation method thereof.
Background technique
Full transparent and soft display technology is the trend of the following display industry, in recent years, Taiwan treasured wound science and technology, LG
Display, BOE (BOE) all release full transparent and soft display screen.Transparent flexible display now mostly uses active matrix liquid crystal
(AM-LCD, the active-matrix liquid crystal display) technology of display, i.e., each independent liquid crystal pixel unit
It is driven with a thin film transistor (TFT) (TFT, thin film transistor), opposite traditional passive liquid crystal display significantly improves point
Resolution now occupies flat panel display leading position.Amorphous indium gallium zinc oxygen (a-IGZO, Amorphous In-Ga-Zn-O) TFT
Become research hotspot as the outstanding person in AOS TFT member, be expected to become mainstream core display technology material of new generation,
Amorphous state IGZO film has the advantage that: (1) forbidden bandwidth is larger (3.1e V-3.5e V), in visible light wave
Section is transparent, is suitable as the active layer material of transparent devices.(2) amorphous state lattice structure electron transport when bending curling occurs
Performance influences less, to be suitable as the active layer material of flexible device.(3) carrier mobility is high, determines the big ruler of display
Very little and high-resolution is suitable as the active layer material of large display device.(4) preparation condition is low temperature (< 300 °), even
Room temperature is compatible with the existing equipment of industrial product.
2004, the Xi Yexiuxiong seminar of Tokyo polytechnical university delivered amorphous state IGZO TFT achievement for the first time, satisfied
Reach 9cm with mobility2/ (Vs), threshold voltage 1.6V, switching current ratio are 103, most amorphous IGZO film Halls
Mobility empirical value is close to 15cm2/(V·s).2008, theory found amorphous state IGZO film hall mobility and chemistry
Metering is than related, and numberical range is in 1-39cm2/(V·s).Beijing University of Technology utilizes pulsed laser deposition, by adjusting target
The technological factors such as material sintering, underlayer temperature, atmosphere pressure, doping component and in-situ annealing, by amorphous state IGZO film carrier
Mobility is from 11.7cm2/ (Vs), which is promoted, arrives 32.7cm2/ (Vs), has been approached theoretical upper values.2015, University of Anhui adopted
58.41cm is obtained with 300 DEG C of underlayer temperature radio-frequency sputterings2/ (Vs) hall mobility, this is the holding amorphous state of report
The highest hall mobility of IGZO film.But it is simple to change vacuum evaporation process or materials chemistry metering ratio, improve amorphous state
IGZO film mobility has reached bottleneck.
Organic Thin Film Transistors research in recent years hot spot is to emerge composite material for what organic polymer and nano material mixed
To change the photoelectricity transport property of organic matter, to solve the problems, such as that amorphous oxide semiconductor film mobility improves bottleneck, mention
New approaches are supplied.Using transparent oxide semiconductor as matrix, nanometer conductive material Uniform Doped is formed one in the oxide
Kind composite material, transports performance to change the photoelectricity of transparent amorphous oxide semiconductor material.This composite material, which can have, to be received
Optical characteristics similar in rice crystal grain, and transparent oxide electric conductivity can be improved, as thin film transistor (TFT) key structure material
Material, is expected to that electronic device performance indicator is substantially improved, more adaptation display device tomorrow requirement.Quantum dot, carbon nanotube, metal
Nano particle, graphene nanometer sheet are that conductive nano filler hot topic selects in composite material, and wherein graphene nano particle has
There is high Bipolar current carrier mobility and to 2.3% low absorptivity of visible light, is suitble to work as transparent flexible film crystal
The conductive nano dopant of pipe, for improving carrier mobility.2012, X.Liu group reported IZO and single-layered carbon nanotube
Transistor based on pipe mixing material shows excellent mechanical flexibility, and 2014, Southeast China University attempted to coat quantum dot
Light modulation thin film transistor (TFT) is made in IGZO film surface, silver nano-grain is coated in IGZO film by J Yu group in 2015
Surface increases film transistor device performance.Graphene is applied in thin film transistor (TFT) mostly as single-layer electrodes or electro-optical modulation layer
Occur, 2010, graphene is coated among ITO electrode and forms separate conductive layer by David Seo group, South Korea, J in 2015
H Zhang group is using graphene as sandwich of layers among semiconductor channel layer, and J.Kim group applies graphene flood within 2015
Semiconductor layer surface is overlayed on, 2015, graphene was coated in entire film crystal pipe surface and is formed by Heejeong group, South Korea
Two-way photoelectric current.
Amorphous state with high mobility-nanocomposite structure doped graphene nano-structured particles IGZO film,
Solid foundation is established for Future Development large scale full transparent and soft flat-panel display device.
Summary of the invention
It is an object of the present invention to provide a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, gained film have preferable electrically conducting transparent characteristic and non-under flexible substrate bending condition
Brilliant-nanocrystalline mixed structure.
A kind of system of the graphene doping indium gallium zinc oxide flexible transparent conductive film of amorphous state-nanocomposite structure
Preparation Method, it is characterised in that: the technique that graphene doped indium gallium zinc oxide film is prepared by sol-gal process improves migration
Rate and the transparency, monolithic film membrane are unified nanocrystalline and amorphous mixing crystalline structure, specifically includes the following steps:
Step 1, graphene oxide water solution Ultrasonic Heating is reduced into graphene nanometer sheet, heating temperature and reducing agent are matched
Than controlling graphene nano chip size, it is centrifuged repeatedly and is washed till neutral aqueous solution, ultrasound is broken up, and is heated to obtaining graphene nano
Particle is spare；
Step 2, by InCl3、Zn(OAC)2、GaCl3Reagent be dissolved in ethylene glycol solution heating stirring to colourless
It is bright, obtain the mixing of indium gallium zinc oxygen colloidal sol；
Step 3, graphene nano particle is mixed with indium gallium zinc oxygen colloidal sol, gained colourless transparent solution is ultrasonic in a water bath
Heating stirring is to sol form；
Step 4, step 3 gained vitreosol is subjected in substrate spin coating by spin coating instrument, then annealed, repeatedly
Multiple spin coating and annealing are carried out, flexible nano grade transparent conductive film is made in substrate.
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: ultrasound described in step 1 restores 60 DEG C -95 DEG C of heating temperature, and the time is
1-3 hours；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: reducing agent described in step 1 is hydrazine hydrate, hydrazine hydrate and graphite oxide
Alkene mass ratio 6:10-8:10；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: the InCl that purity described in step 2 is 99.99%3、Zn(OAC)2、
GaCl3Mixed-powder molar ratio be 0.6-0.9:0.2-0.05:0.2-0.05；InCl3、Zn(OAC)2、GaCl3Purity
It is 99.99%.
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: InCl described in step 23、Zn(OAC)2、GaCl3In ethylene glycol solution
In dissolve stirring when, 20 DEG C -65 DEG C of temperature, mixing time 0.5-2 hours；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: water bath heating temperature described in step 3 is 25 DEG C -80 DEG C, heating time
0.5h-4h；The doping of graphene can be adjusted as needed, and the mass ratio of general graphene nano particle and InCl3 are 1:
100-1:700。
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: Thin-film anneal temperature described in step 4 is 50 DEG C -150 DEG C, when annealing
Between 0.5h-2h, repeat spin coating annealing times 4-18 times or so, PET, FTO, quartz, simple glass, Lan Bao may be selected in base material
Stone glass etc.；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: flexible nano grade transparent conductive film thickness is in 150nm-3000nm.
A kind of graphene of amorphous state-nanocomposite structure provided by the invention adulterates indium gallium zinc oxide electrically conducting transparent
Film and preparation method thereof changes molecular structure based on element doping and functional performance has an important influence on, indium (In)
Element doping, which has, generates crystalline state nanometer and near infrared region light transmittance castering action, and gallium (Ga) element doping is kept with molecule
Non crystalline structure effect, zinc (Zn) element doping keeps nanocrystalline micro-nano covalent structure, to make in film in flexible bending condition
There is down preferable mobility and amorphous-nano-crystalline mixed structure.
The present invention uses graphene nano structure doping techniques, effectively improves chemical method and prepares flexible and transparent oxidation
The poor problem of object semiconductive thin film electric property.
Detailed description of the invention
Fig. 1 is that amorphous-nano-crystalline composite construction graphene doping indium gallium zinc oxide electrically conducting transparent prepared by embodiment 1 is thin
The X ray diffracting spectrum of film.
The pictorial diagram of Fig. 2 amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide transparent conductive film
Piece.
Specific embodiment
Below with reference to embodiment, the present invention will be further described, but the present invention is not limited to following embodiments.
Embodiment 1
A kind of graphene doping indium gallium zinc oxide transparent conductive film of amorphous state-nanocomposite structure and its preparation
Method, it is characterised in that: nanometer chip size is adulterated and controlled using graphene, graphene doped indium is prepared by sol-gal process
The technique of gallium zinc oxide film prepares monolithic film membrane and is prepared as unified nanocrystalline and amorphous mixing crystalline structure, obtains Gao Qian
Shifting rate and high transparency, specifically includes the following steps:
Step 1, by 2g/ml graphene oxide water solution take 0.2ml ultrasound 0.5 hour, be added hydrazine hydrate 0.3ml, 85 DEG C
Heated in water-bath and be reduced within 1 hour graphene nanometer sheet, heat reduction reaction after, be added ammonium hydroxide clean hydrazine hydrate, then spend from
Sub- water, which is centrifuged repeatedly, is washed till neutral aqueous solution, and ultrasound is broken up and to be heated to graphene powder spare.
Step 2, by 5.865 grams of InCl3, 0.548 gram of Zn (OAC)2, 0.44 gram of GaCl3High purity reagent be dissolved in 10ml second
In glycol solution, 50 DEG C of heating stirrings to colourless transparent solution；
Step 3, graphene nanometer sheet powder is mixed with indium gallium zinc oxygen solution, colourless transparent solution surpasses in 30 DEG C of water-baths
Acoustic heating is stirred to sol form；
Step 4, the spin coating under 3000 revs/min of revolving speed in spin coating instrument by vitreosol is annealed 45 minutes at 100 DEG C,
8 times repeatedly, flexible nano grade transparent conductive film is made in substrate.
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: ultrasound described in step 1 breaks up 60 DEG C of heating temperature, and the time is 1 small
When；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: reducing agent described in step 1 is hydrazine hydrate, 50 μ l of hydrazine hydrate and oxidation
Graphene 0.02mg；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: InCl described in step 23、Zn(OAC)2、GaCl3High-purity mixed powder
The molar ratio at end is 0.6:0.2:0.2；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: InCl described in step 23、Zn(OAC)2、GaCl3High purity reagent exist
When dissolving stirring in ethylene glycol solution, 20 DEG C of temperature, mixing time 1 hour；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: water bath heating temperature described in step 3 is 40 DEG C, heating time 1h；Stone
Black alkene nano particle and InCl3Molar ratio be 1:300.
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: Thin-film anneal temperature described in step 4 is 100 DEG C, annealing time
30min, spin coating 6 times, annealing times 6 times, Choice of substrate materials simple glass；
Further, a kind of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide is transparent
Conductive film and preparation method thereof, it is characterised in that: oxide semiconductor thin-film thickness is in 150nm-3000nm, sheet resistance
It is 32 megohms, than not adding the comparison sheet resistance of graphene to promote one times；Film is to the refractive index of 1550nm laser
2.4。
A kind of graphene of amorphous state-nanocomposite structure provided by the invention adulterates indium gallium zinc oxide electrically conducting transparent
Film and preparation method thereof changes molecular structure based on element doping and functional performance has an important influence on, indium (In)
Element doping, which has, generates crystalline state nanometer and near infrared region light transmittance castering action, and gallium (Ga) element doping is kept with molecule
Non crystalline structure effect, zinc (Zn) element doping keeps nanocrystalline micro-nano covalent structure, to make in film in flexible bending condition
There is down preferable mobility and amorphous-nano-crystalline mixed structure.
The present invention uses graphene nano structure doping techniques, mentions compared under equal conditions undoped with graphene film resistance value
It doubles, effectively improves chemical method and prepare the poor problem of flexible and transparent oxide semiconductor thin-film electric property.
Claims (10)
1. a kind of preparation of amorphous state-nanocomposite structure graphene doping indium gallium zinc oxide flexible transparent conductive film
Method, which comprises the following steps:
Step 1, graphene oxide water solution Ultrasonic Heating is reduced into graphene nanometer sheet, heating temperature and reducing agent proportion control
Graphene nano chip size processed, is centrifuged repeatedly and is washed till neutral aqueous solution, and ultrasound is broken up, and is heated to obtaining graphene nano particle
It is spare；
Step 2, by InCl3、Zn(OAC)2、GaCl3Reagent be dissolved in ethylene glycol solution heating stirring to colorless and transparent, obtain
It is mixed to indium gallium zinc oxygen colloidal sol；
Step 3, graphene nano particle is mixed with indium gallium zinc oxygen colloidal sol, gained colourless transparent solution Ultrasonic Heating in a water bath
It stirs to sol form；
Step 4, step 3 gained vitreosol is subjected in substrate spin coating by spin coating instrument, then anneals, is repeated
Flexible nano grade transparent conductive film is made in multiple spin coating and annealing in substrate.
2. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
Property transparent conductive film preparation method, which is characterized in that ultrasound described in step 1 restore 60 DEG C -95 DEG C of heating temperature, when
Between be 1-3 hours；InCl described in step 23、Zn(OAC)2、GaCl3When dissolving stirring in ethylene glycol solution, temperature 20
DEG C -65 DEG C, mixing time 0.5-2 hours；Water bath heating temperature described in step 3 is 25 DEG C -80 DEG C, heating time 0.5h-
4h。
3. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
The preparation method of property transparent conductive film, which is characterized in that reducing agent described in step 1 is hydrazine hydrate, hydrazine hydrate and oxidation
Graphene mass ratio 6:10-8:10.
4. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
The preparation method of property transparent conductive film, which is characterized in that InCl3、Zn(OAC)2、GaCl3The molar ratio of mixed-powder be
0.6-0.9:0.2-0.05:0.2-0.05。
5. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
The preparation method of property transparent conductive film, which is characterized in that graphene nano particle and InCl3The ratio between the amount of substance be 1:
100-1:700。
6. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
Property transparent conductive film preparation method, which is characterized in that Thin-film anneal temperature described in step 4 be 50 DEG C -150 DEG C, move back
Fiery time 0.5h-2h.
7. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
Property transparent conductive film preparation method, which is characterized in that repeat spin coating annealing times 4-18 times.
8. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
Property transparent conductive film preparation method, which is characterized in that base material be selected from PET, FTO, quartz, simple glass, sapphire
Glass.
9. a kind of graphene doping indium gallium zinc oxide of amorphous state-nanocomposite structure described in accordance with the claim 1 is soft
The preparation method of property transparent conductive film, which is characterized in that flexible nano grade transparent conductive film thickness is in 150nm-3000nm.
10. the amorphous state being prepared according to the described in any item methods of claim 1-9-nanocomposite structure graphene
Adulterate indium gallium zinc oxide flexible transparent conductive film.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102394242A (en) * | 2011-11-29 | 2012-03-28 | 武汉大学 | Amorphous indium zinc oxide/carbon nanotube composite film transistor and preparation method thereof |
| CN103094540A (en) * | 2013-01-06 | 2013-05-08 | 中物院成都科学技术发展中心 | Method for compounding graphene and metallic oxide/metallic compound and composite material thereof |
| CN103199126A (en) * | 2013-03-19 | 2013-07-10 | 上海理工大学 | Graphene-zinc-oxide transparent conducting thin film and preparation method thereof |
| CN103754862A (en) * | 2013-11-14 | 2014-04-30 | 北京邮电大学 | Method for preparing reduced graphene oxide / zinc gallate nanoparticle compound |
| CN105185708A (en) * | 2015-09-21 | 2015-12-23 | 西安交通大学 | Amorphous IGZO transparent oxide thin film by H2 processing and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102394242A (en) * | 2011-11-29 | 2012-03-28 | 武汉大学 | Amorphous indium zinc oxide/carbon nanotube composite film transistor and preparation method thereof |
| CN103094540A (en) * | 2013-01-06 | 2013-05-08 | 中物院成都科学技术发展中心 | Method for compounding graphene and metallic oxide/metallic compound and composite material thereof |
| CN103199126A (en) * | 2013-03-19 | 2013-07-10 | 上海理工大学 | Graphene-zinc-oxide transparent conducting thin film and preparation method thereof |
| CN103754862A (en) * | 2013-11-14 | 2014-04-30 | 北京邮电大学 | Method for preparing reduced graphene oxide / zinc gallate nanoparticle compound |
| CN105185708A (en) * | 2015-09-21 | 2015-12-23 | 西安交通大学 | Amorphous IGZO transparent oxide thin film by H2 processing and preparation method thereof |
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Inventor after: Su Xueqiong Inventor after: Qiu Ju Inventor after: Cui Libin Inventor after: Zhao Yishuo Inventor after: Han Xiaodong Inventor after: Liu Yucai Inventor before: Su Xueqiong Inventor before: Qiu Ju Inventor before: Cui Libin Inventor before: Zhao Yishuo Inventor before: Han Xiaodong Inventor before: Liu Yongcai |