CN107453740A - A kind of circuit for improving the distribution of power semiconductor parallel-current - Google Patents
A kind of circuit for improving the distribution of power semiconductor parallel-current Download PDFInfo
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- CN107453740A CN107453740A CN201710914664.2A CN201710914664A CN107453740A CN 107453740 A CN107453740 A CN 107453740A CN 201710914664 A CN201710914664 A CN 201710914664A CN 107453740 A CN107453740 A CN 107453740A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses a kind of circuit for improving the distribution of power semiconductor parallel-current, the circuit is improved on the basis of traditional power semiconductor parallel circuit.Specifically reverse coupled and inductance value identical inductance are added in each power semiconductor source side.When parallel power semiconductor devices is opened, the inductance of two reverse coupleds can induce the approximately uniform voltage drop of size in opposite direction and feed back to driver element, the speed of the faster power semiconductor of switching speed is reduced, accelerates the speed of the slower power semiconductor of switching speed；In addition, inserting a resistance identical resistance also between the source electrode and driver element negative pole of each power semiconductor, voltage drop is avoided to produce too high transient state compensation electric current in source lead.Therefore, circuit provided by the invention, transient current skewness weighing apparatus degree between the power semiconductor of parallel connection can be effectively reduced, avoids power semiconductor from directly being damaged because bearing larger current.
Description
Technical field
The present invention relates to power semiconductor parallel connection field, improves power semiconductor parallel-current more particularly to one kind
The circuit of distribution.
Background technology
In high-power electric and electronic application scenario, the main reason for realizing power demand by parallel way, there is three.The
One, the limitation of current class, power semiconductor (including Metal-Oxide Semiconductor field-effect transistor is (hereinafter referred to as
MOSFET), IGBT etc.) itself current class can not meet the needs of system developer, and in more high current grade device products
In the particular time do not released also, parallel way is the main path for solving this demand.Second, financial cost constraint, even if
The device of more high current initially enters market, but its cost and price is often higher, therefore using the device of middle low power grade
Part parallel connection is relatively inexpensive way.3rd, reliability requirement, the developing history of power semiconductor is made a general survey of, people are always
The device technology of reduced-current grade is grasped at first, in the situation that high current grade device reliability is not proved fully also
Under, the downstream application low current level device parallel way that then preferential application cost is relatively low and reliability is higher come realize power need
Ask, performance requirement and cost control.Therefore, power semiconductor parallel connection is demand in particular time, technology and cost
Between optimal selection caused by game.
At present, because the manufacturing process of power semiconductor material is not mature enough so that power semiconductor parameter
The problem of dispersed is difficult preferably to be solved in a short time, and the parameter differences of power semiconductor can not possibly be complete
Unanimously, cause power semiconductor to be likely to occur under parallel and switch asynchronous, parallel power semiconductor devices
Between the unbalanced problem of CURRENT DISTRIBUTION, it is straight because bearing larger current power semiconductor to be directly resulted under serious conditions
Connect damage.Therefore, how to reduce transient current skewness weighing apparatus degree between parallel power semiconductor devices, be power semiconductor simultaneously
Connection field urgent problem.
The content of the invention
It is an object of the invention to provide a kind of circuit for improving the distribution of power semiconductor parallel-current, can effectively drop
Transient current skewness weighing apparatus degree between low power semiconductor in parallel, avoids power semiconductor because bearing larger electricity
Flow and directly damage.
To achieve the above object, the invention provides following scheme：
A kind of circuit for improving the distribution of power semiconductor parallel-current, the circuit are connected with external circuitses；It is described
Circuit includes：Driver element, the first power semiconductor, second power in parallel with first power semiconductor half
Conductor device, coupling unit, first resistor and second resistance；The coupling unit is the first inductance and second of reverse coupled
Inductance；
The positive pole of the driver element respectively partly lead by the grid with first power semiconductor, second power
The grid connection of body device；
A pair of different name ends being connected with each other in the coupling unit are connected with the negative pole of the external circuitses；The coupling is single
The source electrode with first power semiconductor, second power are partly led respectively at a pair of different name ends not being connected with each other in member
The source electrode connection of body device；
The positive pole of the external circuitses respectively with the draining of first power semiconductor, second power is partly led
The drain electrode connection of body device；
The source electrode of first power semiconductor is connected with one end of the first resistor；Second power is partly led
The source electrode of body device is connected with one end of the second resistance；The negative pole of the driver element is another with the first resistor respectively
One end, the other end connection of the second resistance.
Optionally, the coefficient of coup M of coupling unit scope is 0.98<M<1.
Optionally, first inductance is equal with the inductance value of second inductance；The inductance value of first inductance is
10~50nH.
Optionally, first inductance passes through iron core phase mutual magnetic coupling with second inductance.
Optionally, the first resistor is equal with the resistance of the second resistance；The resistance of the first resistor is 1~10
Ω。
Optionally, the driver element, including drive signal generator, dc source and driving chip, for exporting
Driving voltage is stated, the driving voltage is driven first power semiconductor, the second power semiconductor device
Part turns on.
Optionally, first power semiconductor, second power semiconductor are voltage-controlled type power half
Conductor device.
Optionally, the voltage-controlled type power semiconductor is silicon carbide MOSFET device.
According to specific embodiment provided by the invention, the invention discloses following technique effect：One kind provided by the invention
Improve the circuit of power semiconductor parallel-current distribution, the circuit is in traditional power semiconductor parallel circuit
On the basis of be improved.Wherein, the circuit is included in parallel power semiconductor devices source side and adds reverse coupled and electricity
Inductance value identical inductance, resistance identical electricity is added between parallel power semiconductor devices source electrode and driver element negative pole
Resistance.Size in opposite direction to be induced on the inductance of two reverse coupleds almost identical when parallel power semiconductor devices is opened
Voltage drop, opposite voltage drop can feed back to driver element, and one is formed to the gate-source voltage of parallel power semiconductor devices
The effect of individual negative-feedback so that the faster power semiconductor switching device of switching speed slows, meanwhile, accelerate switching speed
Slower power semiconductor；A resistance is inserted in the source side of each power semiconductor driving simultaneously, avoids electricity
Pressure drop produces too high transient state compensation electric current in source lead.Therefore, circuit provided by the invention, parallel connection can effectively be reduced
Power semiconductor between transient current skewness weighing apparatus degree, avoid power semiconductor straight because bearing larger current
Connect damage.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the structural representation for the circuit that the embodiment of the present invention improves the distribution of power semiconductor parallel-current；
Fig. 2 is that the structure of two silicon carbide MOSFET device parallel-current distribution character test circuits of the embodiment of the present invention is shown
It is intended to.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Compared with prior art, presently mainly by active compensation of delay method come realize parallel power semiconductor devices it
Between transient current it is balanced.Active compensation of delay method, directly obtained by measurement means such as PCB types Rogowski coil, current transformers
Current difference extracts current-unbalance information indirectly by the pressure drop of stray inductance, and feeds back in FPGA or DSP
To adjust gate drive signal, but realize that current balance may need several cycles, and control algolithm is complex, Er Qiecheng
This is higher.Also having passive control method, transient current is balanced between parallel power semiconductor devices to realize, specifically by adopting
The equilibrium of electric current is realized with passive elements such as inductance or resistance, it is not necessary to the situation of voltage-current sensor and backfeed loop
Under, the mismatch of can limitation electric current in a switch periods.Passive control method is mainly utilized in devices in parallel at present
Source side is connected respectively equal-sized larger inductance and then is greatly reduced current-unbalance degree, but uses larger electricity
The defects of there is power semiconductor on/off time length in sense, switching loss is big.
It is therefore an object of the present invention to a kind of circuit for improving the distribution of power semiconductor parallel-current is provided, can
By passive control method, using less inductance, transient current between the power semiconductor of parallel connection just can be effectively reduced
Skewness weighing apparatus degree, avoids power semiconductor from directly being damaged because bearing larger current, and reduces power semiconductor device
The part on/off time, reduce switching loss.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
Fig. 1 is the structural representation for the circuit that the embodiment of the present invention improves the distribution of power semiconductor parallel-current.This
The circuit that invention provides is connected with external circuitses；As shown in figure 1, the circuit includes：Driver element 1, the first power semiconductor
Device 2, second power semiconductor 3 in parallel with first power semiconductor, coupling unit 4, first resistor 5 with
And second resistance 6；The coupling unit 4 is the first inductance 41 and the second inductance 42 of reverse coupled.
The positive pole of the driver element 1 grid 21 with first power semiconductor 2, second power respectively
The grid 31 of semiconductor devices 3 connects.
A pair of different name ends being connected with each other in the coupling unit 4 are connected with the negative pole of the external circuitses；The coupling
A pair of different name ends not being connected with each other in unit 4 source electrode 22 with first power semiconductor 2, second work(respectively
The source electrode 32 of rate semiconductor devices 3 connects.
The positive pole of the external circuitses drain electrode 23 with first power semiconductor 2, second power respectively
The drain electrode 33 of semiconductor devices 3 connects.
The source electrode 22 of first power semiconductor 2 is connected with one end of the first resistor 5；Second power
The source electrode 32 of semiconductor devices 3 is connected with one end of the second resistance 6；The negative pole of the driver element 1 is respectively with described
The other end of one resistance 5, the other end connection of the second resistance 6.
The coefficient of coup M of the coupling unit 4 scope is 0.98<M<1.
First inductance 41 is equal with the inductance value of second inductance 42；The inductance value of first inductance 41 is 10
~50nH, i.e., the inductance value of described second inductance 42 is 10~50nH.
First inductance 41 is mutually magnetic-coupled by iron core with second inductance 42.
The first resistor 5 is equal with the resistance of the second resistance 6；The resistance of the first resistor 5 is 1~10 Ω,
The resistance of i.e. described second resistance 6 is 1~10 Ω.
The driver element 1, including drive signal generator, dc source and driving chip, for exporting the driving
Voltage, the driving voltage is set to drive first power semiconductor 2, second power semiconductor 3 to lead
It is logical.
Preferential, first power semiconductor 2, second power semiconductor in the embodiment of the present invention
3 be voltage-controlled type power semiconductor.
Preferential, the voltage-controlled type power semiconductor in the embodiment of the present invention is silicon carbide MOSFET device.
The operation principle of circuit provided by the invention is：
Step S101：Driver element 1 sends drive voltage signal, i.e. the first power semiconductor 2, the second power is partly led
The switching signal of body device 3.
Step S102：When causing the first power semiconductor 2, the second power semiconductor 3 to switch by other factors
During speed difference, now the first power semiconductor 2, that the current changing rate of the second power semiconductor 3 will be present is poor
It is different.
Step S103：Different current changing rates will produce respectively on reverse coupled the first inductance 41 and the second inductance 42
Raw different pressure drop.
Step S104：The pressure drop of the first inductance 41 and the second inductance 42 of reverse coupled is on the contrary, reversely the after superposition
One resistance 5 and the partial pressure of second resistance 6, form negative feedback voltage signal.
Step S105：Negative feedback voltage Signal averaging influences the first power half in driver element 1 on driving voltage
The switching speed of conductor device 2, the second power semiconductor 3.
Step S106：First power semiconductor 2, the switching speed of the second power semiconductor 3 are convergent, CURRENT DISTRIBUTION
It is more balanced.
In the embodiment of the present invention when the first power semiconductor 2,3 switching speed difference of the second power semiconductor,
The and of the first inductance 41 of reverse coupled is added by the first power semiconductor 2,3 respective source electrode of the second power semiconductor
Second inductance 42, negative-feedback is carried out to the driving voltage in driver element, and effect is flowed in improvement.
Circuit provided by the invention is improved on the basis of traditional power semiconductor parallel circuit, main
If add a reverse coupled each other in the first power semiconductor 2, the respective source side of the second power semiconductor 3
First inductance 41 and the second inductance 42, and the first inductance 41 and the inductance value very little of the second inductance 42, i.e., in addition inductance value very little
In the case of can produce enough improve flow situation negative feedback voltage；In the first power semiconductor 2, the second power
Resistance identical first resistor 5, a second resistance are each added between the source electrode and the negative pole of driver element 4 of semiconductor devices 3
6, for limit circuit electric current and partial pressure；Open and get negative pressure and driving on the source resistance of faster power semiconductor side
Voltage is superimposed, and speed is opened in reduction；Open and get malleation and driving on slower power semiconductor side source resistance
Voltage is superimposed, increases switching speed, that is, adds susceptibility of the Voltage Feedback amount to current difference, inductance is sealed in not increasing
The unbalanced degree of parallel power semiconductor devices transient current is greatly reduced in can in the case of numerical value, realizes preferably equal
Flow effect.
Two silicon carbide MOSFET device parallel current-sharing characteristics after a preferable addition coupling inductance being provided below
Test circuit illustrates that the circuit of improvement power semiconductor parallel-current distribution provided by the invention can be by passive control
Method processed, using less inductance, transient current skewness weighs between just effectively reducing the power semiconductor of parallel connection
Degree, avoids power semiconductor from directly being damaged because bearing larger current.
Fig. 2 is that the structure of two silicon carbide MOSFET device parallel-current distribution character test circuits of the embodiment of the present invention is shown
It is intended to, as shown in Fig. 2 the test circuit includes driver element 1, the first silicon carbide MOSFET device 201, with the described first carbonization
Second silicon carbide MOSFET device 202 in parallel of silicon MOSFET element 201, it is coupling unit 4, first resistor 5, second resistance 6, outer
Connect circuit；The external circuitses include inductance 7, the fly-wheel diode 8 in parallel with the inductance 7, connect with the inductance 7 it is straight
Flow power supply 9, and the electric capacity 10 in parallel with the dc source 9 (according to the actual requirements can simultaneously the multiple electric capacity of parallel connection).Institute
State the first inductance 41 and the second inductance 42 that coupling unit 4 is reverse coupled.
The positive pole of the driver element 1 grid 21 with first silicon carbide MOSFET device 201, described second respectively
The grid 31 of silicon carbide MOSFET device 202 connects.
The drain electrode 23 with first silicon carbide MOSFET device 201, second carbonization respectively of the positive pole of the inductance 7
The drain electrode 33 of silicon MOSFET element 202 connects.The negative pole of the inductance 7 is connected with the positive pole of the dc source 9.
A pair of different name ends being connected with each other in the coupling unit 4 are connected with the negative pole of the dc source 9；The coupling
A pair of different name ends not being connected with each other in unit 4 source electrode 22 with first silicon carbide MOSFET device 201, described respectively
The source electrode 32 of two silicon carbide MOSFET devices 202 connects.
The source electrode 22 of first silicon carbide MOSFET device 201 is connected with one end of the first resistor 5；Described second
The source electrode 32 of silicon carbide MOSFET device 202 is connected with one end of the second resistance 6；The negative pole difference of the driver element 1
The other end of the other end, the second resistance 6 with the first resistor 5 is connected.
Wherein, driver element 1 provides driving voltage to the first silicon carbide MOSFET device 201, the second silicon carbide MOSFET
Device 202, the first silicon carbide MOSFET device 201 of control, the second silicon carbide MOSFET device 202 turn on and off.
Loop of power circuit in Fig. 2 is the first silicon carbide MOSFET device 201,202 works of the second silicon carbide MOSFET device
The major loop of work.
Preferential, the embodiment of the present invention selects one big load of the inductance as external circuitses, and the two of external circuitses
One fly-wheel diode 8 of side parallel connection.
Preferential, in the electric capacity 10 that the dc source 9 is in parallel in the embodiment of the present invention.Due to the voltage stabilizing of bulky capacitor
Effect, after being charged by dc source 9 to electric capacity, in the first silicon carbide MOSFET device 201, the second carborundum
During the switching transients of MOSFET element 202, electric capacity 10 can be regarded as direct voltage source.
First silicon carbide MOSFET device 201, the second silicon carbide MOSFET device 202 are entered by switching to loop of power circuit
Row control.
For convenience of explanation, inductance L is used belowS1Instead of the first inductance 41, with inductance LS2Instead of the second inductance 42；Electricity consumption
Hinder RS1Instead of first resistor 5, with resistance RS2Instead of second resistance 6.
In the additional reverse coupled of the source electrode of the first silicon carbide MOSFET device 201, the second silicon carbide MOSFET device 202
Inductance LS1With inductance LS2Change for induced-current, produce voltage.In inductance LS1, inductance LS2, resistance RS1, resistance RS2Form
In backfeed loop, two reverse coupled inductance LS1With inductance LS2Caused voltage is in resistance RS1With resistance RS2Upper partial pressure, generation are negative
Feedback voltage uR1With voltage uR2。
The first silicon carbide MOSFET device 201, the second silicon carbide MOSFET device 202 opening process in, it is assumed that simultaneously
First silicon carbide MOSFET device 201 of connection, the conducting electric current flowed through in the second silicon carbide MOSFET device 202 are respectively i1With
i2, reverse coupled inductance LS1With inductance LS2Between mutual inductance be M, then have, inductance LS1Upper sensing produces pressure drop uL1For LS1·
di1/dt-M·di2/ dt, inductance is in LS2Pressure drop u caused by upperL2For LS2·di2/dt-M·di1/dt。
Make LS1=LS2=L, and the coefficient of coup is close to 1, then mutual inductance M=L.And then u can be obtainedL1=L (di1/dt-
di2/dt)、uL2=L (di2/dt-di1/ dt) because di1/ dt ＞ di2/ dt, so there is uL1=-uL2＞ 0, two inductance LS1
With inductance LS2The voltage swing sensed is equal, in opposite direction.
Due in inductance LS1, inductance LS2, resistance RS1, resistance RS2In the backfeed loop of formation, two inductance LS1And inductance
LS2On total voltage uL=uL1-uL2=2uL1.In the feedback loop, can be by inductance LS1With inductance LS2Entirety regards a voltage as
For uLVoltage source, resistance RS1With resistance RS2External circuitses partial pressure as backfeed loop.
Make RL1=RL2So that voltage uLIn two resistance RS1With resistance RS2On evenly distribute, then have uF1=-uF2=uL/
2=uL1=L (di1/dt-di2/ dt), u hereinF1And uF2Refer to inductance LS1With inductance LS2Voltage is in electricity caused by sensing
Hinder RS1With resistance RS2On the additional feedback voltage got, its feedback voltage direction respectively with resistance RS1With resistance RS2Both ends are true
Real voltage uR1With voltage uR2It is identical.
Because driving circuit has electric current to flow through during normal switch, this electric current is in resistance RS1With resistance RS2Upper production
Raw voltage uE1With voltage uE2, direction respectively with voltage uR1With voltage uR2It is identical, and have uR1=uE1+uF1、uR2=uE2+uF2.Can
To obtain the first silicon carbide MOSFET device 201, the gate-source voltage of the second silicon carbide MOSFET device 202 be respectively ugs1=
udr-uR1=udr-uE1-uF1, ugs2=udr-uR2=udr-uE2-uF2.If it is not added with coupling inductance LS1With inductance LS2, then uF1=
uF2=0, there is ugs1a=udr-uE1, ugs2a=udr-uE2, addition coupling inductance LS1With inductance LS2Afterwards, ugs1b=udr-uE1-L(di1/
dt-di2/dt), ugs2b=udr-uE2+L(di2/dt-di2/dt)。
If the first silicon carbide MOSFET device 201 is opened faster, di1/dt-di2/dt＞ 0, there is ugs1b＜ ugs1a、ugs2b＞
ugs2a, the gate-source voltage of the first silicon carbide MOSFET device 201 is reduced, increases the second silicon carbide MOSFET device 202
Gate-source voltage, and then slow down the speed of opening of the first silicon carbide MOSFET device 201, accelerate the second silicon carbide MOSFET device
Part 202 opens speed so that the switching speed of two devices tends to be identical, improves the equal properties of flow of transient state.
Source electrode and loop of power circuit provided in an embodiment of the present invention in silicon carbide MOSFET in parallel inserts between collecting terminal
The inductance coil of the larger reverse coupled of two coefficients of coup, it can realize when silicon carbide MOSFET device in parallel is opened,
The almost identical voltage drop of size in opposite direction can be induced on the inductance coil of reverse coupled, opposite voltage drop can be fed back to
Driving circuit, the effect of a negative-feedback is formed to silicon carbide MOSFET device gate-source voltage so that switching speed is faster
Silicon carbide MOSFET device switching speed is slack-off, meanwhile, accelerate the slower silicon carbide MOSFET device of switching speed.In addition, it is
Voltage drop is avoided to produce too high transient state compensation electric current in source lead, in the source of each silicon carbide MOSFET device driving
A resistance is inserted to limit the electric current in pole side.Due to the introducing of the reverse coupled inductance so that feedback voltage is to current difference
Sensitivity it is higher, so the reverse coupled inductance value can that need to only insert very little significantly reduces devices in parallel electric current not
Balance, and switching loss and current over pulse influence very little on device.
Therefore, the circuit proposed by the present invention for improving the distribution of power semiconductor parallel-current is advantageous to improve work(in parallel
Transient current skewness problem caused by rate semiconductor device switch speed is inconsistent.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
Specific case used herein is set forth to the principle and embodiment of the present invention, and above example is said
It is bright to be only intended to help the method and its core concept for understanding the present invention；Meanwhile for those of ordinary skill in the art, foundation
The thought of the present invention, in specific embodiments and applications there will be changes.In summary, this specification content is not
It is interpreted as limitation of the present invention.
Claims (8)
1. a kind of circuit for improving the distribution of power semiconductor parallel-current, it is characterised in that the circuit and external circuitses
Connection；The circuit includes：It is driver element, the first power semiconductor, in parallel with first power semiconductor
Second power semiconductor, coupling unit, first resistor and second resistance；The coupling unit is the first of reverse coupled
Inductance and the second inductance；
The positive pole of the driver element grid with first power semiconductor, the second power semiconductor device respectively
The grid connection of part；
A pair of different name ends being connected with each other in the coupling unit are connected with the negative pole of the external circuitses；In the coupling unit
A pair of different name ends not being connected with each other the source electrode with first power semiconductor, the second power semiconductor device respectively
The source electrode connection of part；
The positive pole of the external circuitses respectively with the draining of first power semiconductor, the second power semiconductor device
The drain electrode connection of part；
The source electrode of first power semiconductor is connected with one end of the first resistor；The second power semiconductor device
The source electrode of part is connected with one end of the second resistance；The negative pole of the driver element is another with the first resistor respectively
End, the other end connection of the second resistance.
2. circuit according to claim 1, it is characterised in that the coefficient of coup M of coupling unit scope is 0.98<
M<1。
3. circuit according to claim 1, it is characterised in that the inductance value phase of first inductance and second inductance
Deng；The inductance value of first inductance is 10~50nH.
4. circuit according to claim 1, it is characterised in that first inductance passes through iron core phase with second inductance
Mutual magnetic coupling.
5. circuit according to claim 1, it is characterised in that the resistance phase of the first resistor and the second resistance
Deng；The resistance of the first resistor is 1~10 Ω.
6. circuit according to claim 1, it is characterised in that the driver element, including drive signal generator, direct current
Power supply and driving chip, for exporting the driving voltage, the driving voltage is set to drive first power semiconductor
Device, second power semiconductor conducting.
7. circuit according to claim 1, it is characterised in that first power semiconductor, second power
Semiconductor devices is voltage-controlled type power semiconductor.
8. circuit according to claim 7, it is characterised in that the voltage-controlled type power semiconductor is carborundum
MOSFET element.
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| CN201710914664.2A CN107453740A (en) | 2017-09-30 | 2017-09-30 | A kind of circuit for improving the distribution of power semiconductor parallel-current |
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| CN201710914664.2A CN107453740A (en) | 2017-09-30 | 2017-09-30 | A kind of circuit for improving the distribution of power semiconductor parallel-current |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802590A (en) * | 2018-06-22 | 2018-11-13 | 华北电力大学 | A kind of the power circulation test method and test system of semiconductor devices |
| CN109639121A (en) * | 2019-01-02 | 2019-04-16 | 深圳市禾望电气股份有限公司 | IGBT discrete device parallel connection dynamic flow equalizing circuit structure and electric machine controller |
| CN111224533A (en) * | 2019-12-04 | 2020-06-02 | 石家庄通合电子科技股份有限公司 | Automatic current sharing circuit and method for negative temperature diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2742584A1 (en) * | 2011-09-29 | 2014-06-18 | Siemens Aktiengesellschaft | Power semiconductor switch with a modular design with current balance monitoring for fault detection |
| CN103905018A (en) * | 2012-12-25 | 2014-07-02 | 西安永电电气有限责任公司 | Dynamic current sharing circuit of IGBT module parallel unsymmetrical circuit |
-
2017
- 2017-09-30 CN CN201710914664.2A patent/CN107453740A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2742584A1 (en) * | 2011-09-29 | 2014-06-18 | Siemens Aktiengesellschaft | Power semiconductor switch with a modular design with current balance monitoring for fault detection |
| CN103905018A (en) * | 2012-12-25 | 2014-07-02 | 西安永电电气有限责任公司 | Dynamic current sharing circuit of IGBT module parallel unsymmetrical circuit |
Non-Patent Citations (2)
| Title |
|---|
| GANGYAO WANG, JOHN MOOKKEN, JULIUS RICE, MARCELO SCHUPBACH: "Dynamic and Static Behavior of Packaged Silicon", 《2014 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION - APEC 2014》 * |
| 曾正，邵伟华，胡博容，康升扬，廖兴林，李辉，冉立: "基于耦合电感的SiC MOSFET并联主动均流", 《中国机工程学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802590A (en) * | 2018-06-22 | 2018-11-13 | 华北电力大学 | A kind of the power circulation test method and test system of semiconductor devices |
| CN108802590B (en) * | 2018-06-22 | 2019-09-03 | 华北电力大学 | A kind of the power circulation test method and test macro of semiconductor devices |
| CN109639121A (en) * | 2019-01-02 | 2019-04-16 | 深圳市禾望电气股份有限公司 | IGBT discrete device parallel connection dynamic flow equalizing circuit structure and electric machine controller |
| CN111224533A (en) * | 2019-12-04 | 2020-06-02 | 石家庄通合电子科技股份有限公司 | Automatic current sharing circuit and method for negative temperature diode |
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