CN107425873A - Radio frequency front-end device and the electronic equipment for including it - Google Patents
Radio frequency front-end device and the electronic equipment for including it Download PDFInfo
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- CN107425873A CN107425873A CN201710770962.9A CN201710770962A CN107425873A CN 107425873 A CN107425873 A CN 107425873A CN 201710770962 A CN201710770962 A CN 201710770962A CN 107425873 A CN107425873 A CN 107425873A
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- radio frequency
- coupler
- switch
- end device
- frequency front
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
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Abstract
The present embodiments relate to technical field of communication equipment, discloses a kind of radio frequency front-end device and includes its electronic equipment.In the present invention, radio frequency front-end device includes：Radio frequency substrate, RF switch chip and L RF coupler；Wherein, L is the natural number more than 1；RF coupler includes coupling unit, and coupling unit is formed at radio frequency substrate, and RF switch chip is arranged at radio frequency substrate；L RF switch is integrated with RF switch chip, L RF switch is correspondingly connected to L RF coupler.Embodiment of the present invention is integrated into a RF switch chip by the way that RF coupler is formed on radio frequency substrate and by multiple RF switches, so as to reduce radio frequency front-end device area occupied, reduce cost and the loss of radio frequency Insertion Loss.
Description
Technical field
The present embodiments relate to technical field of communication equipment, more particularly to a kind of radio frequency front-end device and its electricity is included
Sub- equipment.
Background technology
With the fast development of the communication technology, requirement more and more higher of the people to communication speed.Carrier aggregation (Carrier
Aggregation, abbreviation CA) be in LTE (Long Term Evolution, Long Term Evolution, abbreviation LTE) technical extension,
The principle of carrier aggregation is to polymerize the carrier wave of a variety of different frequencies, expands effective transmission bandwidth, realization lifting transmission so as to reach
The purpose of data transfer rate.With communication equipment develop to multimode direction and band support quantitative indicator increase so that before radio frequency
End number of chips constantly increases.
Inventor has found that at least there are the following problems in the prior art：In existing radio-frequency front-end solution, to understand
Certainly multi-frequency receives common hair and detects the purpose of power simultaneously altogether, and mostly RF coupler is integrated into RF switch chip,
The RF switch of different frequency range is realized using different RF switch chips simultaneously.This kind of mode is needing more multi-carrier polymerizing
When, it is necessary to more RF switch chips, not only implementation is excessively complicated, cost is high, and takes a large amount of areas.And
And RF coupler be integrated into brought in RF switch chip radio frequency Insertion Loss loss it is also very high.
The content of the invention
The purpose of embodiment of the present invention is to provide a kind of radio frequency front-end device and includes its electronic equipment, pass through by
RF coupler forms on radio frequency substrate and multiple RF switches is integrated into a RF switch chip, so as to subtract
Few radio frequency front-end device area occupied, reduce cost and the loss of radio frequency Insertion Loss.
In order to solve the above technical problems, embodiments of the present invention provide a kind of radio frequency front-end device, including：Radio frequency base
Plate, RF switch chip and L RF coupler；Wherein, the L is the natural number more than 1；The RF coupler includes
Coupling unit, and the coupling unit is formed at the radio frequency substrate, the RF switch chip is arranged at the radio frequency substrate；
L RF switch is integrated with the RF switch chip, it is individual RF-coupled that the L RF switch is correspondingly connected to the L
Device.
Embodiments of the present invention additionally provide a kind of electronic equipment, including foregoing radio frequency front-end device.
Embodiment of the present invention is in terms of existing technologies, it is contemplated that the coupling of RF coupler especially RF coupler
When unit integrates with RF switch, it is difficult to which multiple RF switches and multiple RF couplers are integrated in into one simultaneously
In RF switch chip, cause to need to use more RF switch chips when realizing carrier aggregation and bring cost height, penetrate
The problem of frequency performance is bad and radio frequency front-end device area occupied is big etc., the RF coupler of RF switch integrated level will be influenceed
Coupling unit be formed directly on radio frequency substrate, so as to which multiple RF switches are integrated in into a RF switch chip
In, and then the integrated level of RF switch chip can be improved, the area that radio frequency front-end device takes is reduced, reduces cost, simultaneously
Also helping reduces the loss of radio frequency Insertion Loss, improves radio-frequency performance.
In addition, the RF coupler also includes the load end being connected with the coupling unit；The load end is integrated in
The RF switch chip.So that the integrated level of radio frequency front-end device is higher.
In addition, the RF coupler is integrally formed in the radio frequency substrate.
In addition, the radio frequency front-end device also includes coupler switch element and transceiver；The coupler switch is single
Member is connected between output end and the transceiver of the L RF coupler switch；The coupler switch element integrates
In the RF switch chip.
In addition, the coupler switch element is hilted broadsword L throw switches.So as to conveniently realize only descending carrier polymerization
When power detection signal switching.
In addition, the coupler switch element includes：L hilted broadsword P throw switch, the P are more than 1 and less than or equal to L's
Natural number；The moved end of the hilted broadsword P throw switches is correspondingly connected to the output end of the RF coupler, the hilted broadsword P throw switches
P not moved end does not connect the transceiver respectively.So as to neatly realize that various carrier waves gather by coupler switch element
Power detection under conjunction mode.
In addition, the radio frequency front-end device also includes：Multiplexer；L connection end of the multiplexer is connected respectively
The L RF switch.
Brief description of the drawings
One or more embodiments are illustrative by the picture in corresponding accompanying drawing, these exemplary theorys
The bright restriction not formed to embodiment, the element for having same reference numbers label in accompanying drawing are expressed as similar element, removed
Non- have a special statement, and composition does not limit the figure in accompanying drawing.
Fig. 1 is the structural representation according to first embodiment of the invention radio frequency front-end device；
Fig. 2 is the structural representation according to the coupler switch element of first embodiment of the invention radio frequency front-end device；
Fig. 3 is the structural representation according to second embodiment of the invention radio frequency front-end device；
Fig. 4 is a kind of structural representation according to the coupler switch element of second embodiment of the invention radio frequency front-end device
Figure；
Fig. 5 is shown according to another structure of the coupler switch element of second embodiment of the invention radio frequency front-end device
It is intended to；
Fig. 6 is shown according to the yet another construction of the coupler switch element of second embodiment of the invention radio frequency front-end device
It is intended to.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with accompanying drawing to the present invention
Each embodiment be explained in detail.However, it will be understood by those skilled in the art that in each embodiment party of the present invention
In formula, in order that reader more fully understands the application and proposes many ins and outs.But even if without these ins and outs
With many variations based on following embodiment and modification, the application technical scheme claimed can also be realized.
The first embodiment of the present invention is related to a kind of radio frequency front-end device, and the radio frequency front-end device can possess carrier wave and gather
Conjunction ability, so as to be applied to high-speed mobile communications equipment, whether present embodiment supports carrier aggregation for radio frequency front-end device
It is not specifically limited.The core of present embodiment is：Radio frequency front-end device includes radio frequency substrate, RF switch chip and L
Individual RF coupler.L is the natural number more than 1.RF coupler includes coupling unit, and coupling unit is formed at radio frequency base
Plate, RF switch chip are arranged at radio frequency substrate.L RF switch is integrated with RF switch chip, L RF switch is corresponding
It is connected to L RF coupler.Embodiment of the present invention is in terms of existing technologies, it is contemplated that RF coupler especially radio frequency
When the coupling unit of coupler integrates with RF switch, it is difficult to which multiple RF switches and multiple RF couplers are same
When be integrated in a RF switch chip, cause to need to use more RF switch chips when realizing carrier aggregation and band
The problem of coming that cost is high, radio-frequency performance is bad and radio frequency front-end device area occupied is big etc., will influence RF switch integrated level
The coupling unit of RF coupler be formed directly on radio frequency substrate, penetrated so as to which multiple RF switches are integrated in into one
In frequency switch chip, and then the integrated level of RF switch chip can be improved, reduce the area that radio frequency front-end device takes, reduced
Cost, while the Insertion Loss loss of reduction radio frequency is also helped, improve radio-frequency performance.
Details, which is specifically described, to be realized to the radio frequency front-end device of present embodiment below, herein below is only side
Just understand that what is provided realizes details, not implement the necessary of this programme.
As shown in figure 1, show a kind of radio frequency front-end device for supporting the descending polymerization of dual carrier.The radio frequency front-end device bag
Include：Radio frequency substrate (not shown), transceiver (not shown), multiple power amplifier PA (Power Amplifier, abbreviation PA),
Multiple low-noise amplifier LNA (Low Noise Amplifier, abbreviation LNA), multiple first kind duplexers (such as including
Duplexer Band3, Band8 etc.), RF switch chip 1, RF coupler unit 2 (including two penetrate by RF coupler unit 2
Frequency coupler, such as respectively the first RF coupler 20 and the second RF coupler 21) and a wide-band multiplexer 3
(being, for example, specifically wide-band duplexer).Wherein, two RF switch (the first RF switches are integrated with RF switch chip 1
10 and second RF switch 11).In present embodiment, the duplexer of the first kind passes through power amplifier PA and low noise
Amplifier LNA connection transceivers, the also corresponding connection RF switch of the duplexer of the first kind, such as duplexer Band8 connections the
One RF switch 10, the second RF switch of duplexer Band3 connections 11, RF switch are correspondingly connected to RF coupler (i.e.
One RF switch 10 connects the first RF coupler 20, and the second RF switch 11 connects the second RF coupler 21), it is RF-coupled
The output end connection transceiver of device, each RF switch is all connected with wide-band multiplexer 3, and (i.e. the first RF switch 10 connects wide-band
The low-frequency range connection end of duplexer, the second RF switch 11 connect the high band connection end of wide-band duplexer), wide-band multiplexing
Device 3 is also connected with antenna 4, so as to be penetrated by the duplexer of two first kind (such as Band3, Band8 duplexer), first
Frequency the 10, second RF switch 11 of switch and wide-band duplexer realize that dual carrier polymerize, and can be RF-coupled by first
The RF coupler 21 of device 20 or second detects power.Present embodiment is for first kind duplexer, RF switch, RF-coupled
The number of device is not specifically limited, and its concrete structure is also not specifically limited.Those skilled in the art can use
Well known mode realizes duplexer, RF switch, RF coupler of the first kind etc..
In the prior art because RF coupler and RF switch are integrated in a RF switch chip, so in radio frequency
When multiple RF switches are integrated in switch chip, difficulty is very big.Therefore, present embodiment is intended to break RF switch and radio frequency
The integrated morphology of coupler, by the way that at least part of RF coupler (i.e. coupling unit) is formed on radio frequency substrate, so as to
The coupling unit of RF coupler is departed from away from RF switch chip, and then realizes and multiple RF switches is integrated in one
In RF switch chip.So, because the coupling unit of RF coupler is not in RF switch chip, so different frequency bands
Radiofrequency signal isolation difficulty reduce it is a lot, so as on the premise of performance is not lost easily by multiple RF switches
It is integrated in a RF switch chip.Specifically, RF coupler includes coupling unit and load end.Coupling unit connects
It is connected to load end, the coupling unit of RF coupler correspondingly connects RF switch (such as the coupling unit of the first RF coupler
Connect the first RF switch, the coupling unit of the second RF coupler connects the second RF switch), RF switch and RF-coupled
The specific connected mode of device is well known to those skilled in the art, and here is omitted.Wherein, coupling unit is, for example, to couple electricity
Sense, load end is, for example, resistance.The concrete structure of present embodiment RF coupling device is not limited.The coupling of RF coupler
Unit is formed at radio frequency substrate, such as coupling inductance paster is arranged on radio frequency substrate, because coupling unit is RF-coupled
The main wiring portion of device, so coupling unit is formed in radio frequency substrate, it can avoid arranging in RF switch chip
Coupling unit, so as to avoid taking larger RF switch chip area, and then RF switch chip can be effectively reduced
Size.The load end of RF coupler can also be integrated in RF switch chip.Pass through the resistance and electricity on RF switch chip
The passive devices such as appearance, can conveniently realize linking between RF switch and the load end of RF coupler.In some examples
In, can also be that RF coupler is integrally formed in radio frequency substrate, subelement of the present embodiment for RF coupler with
The integrated relationship of RF switch chip is not specifically limited.In the prior art, because RF coupler and RF switch are integrated in
In one RF switch chip, in order to save the area of RF switch chip, the size of the coupling unit of RF coupler by
Greatly limitation, cause the loss of radio frequency Insertion Loss higher, and coupling unit is formed directly on radio frequency substrate by present embodiment, because
This can suitably increase the size of coupling unit, so as to advantageously reduce the loss of radio frequency Insertion Loss.
The radio frequency front-end device of present embodiment also includes：Coupler switch element (not shown).When the radio frequency shown in Fig. 1
Fore device only supports the descending polymerization of dual carrier and in transmitting power signal, only needs a RF coupler job, this
When, an only RF coupler output, therefore, the first RF coupler 20 and the second RF coupler 21 can share one
Individual public output (CPL_Out) is to connect transceiver, in the case of this kind, it is necessary to by coupler switch element by two radio frequencies
The output switching of coupler to RF coupler public output.As shown in Fig. 2 coupler switch element can be a list
Double-pole double throw switch.The moved end of the single-pole double-throw switch (SPDT) correspondingly connects the public output CPL_Out of RF coupler, single-pole double throw
Moved end does not connect the output end O of the first RF coupler 20 to two of switch respectively1And second RF coupler 21 output
Hold O2。
Present embodiment is by the related passive device of multiple RF switches, coupler switch element and RF coupler
(such as load end of RF coupler) is integrated in a RF switch chip, compared with prior art, can significantly be carried
The integrated level of firing frequency switch chip, the area of RF switch chip occupancy is greatly saved so that radio frequency front-end device accounts for
It is smaller with area.And the size design of the coupling unit of RF coupler is more flexible, therefore it is more conducive to reduce radio frequency Insertion Loss.This
Embodiment compared with prior art, by optimizing RF switch chip integration, can reduce cost more than 30%.
Second embodiment of the present invention is related to a kind of radio frequency front-end device.Second embodiment is big with first embodiment
Cause identical, be in place of the main distinction：In the first embodiment, radio frequency front-end device can apply to dual carrier descending carrier
It polymerize radio-frequency front-end.And in second embodiment of the invention, radio frequency front-end device can apply to three carrier waves it is descending and/or on
Row carrier aggregation radio-frequency front-end, further enriches embodiment of the present invention.
As shown in figure 3, show a kind of radio frequency front-end device for supporting three carrier wave descending carriers to polymerize.The radio-frequency front-end fills
Put including：Radio frequency substrate (not shown), transceiver (not shown), RF switch chip 1, RF coupler unit 2 are (RF-coupled
Device unit 2 includes three RF couplers, such as respectively the first RF coupler 20, the second RF coupler 21 and the 3rd
RF coupler 22), multiple first kind duplexers (such as Band8, Band3 and Band7), a wide-band multiplexer 3
(being specially a wide-band triplexer).Wherein, three RF switch (the first RF switches are integrated with RF switch chip
10th, the second RF switch 11 and the 3rd RF switch 12).In present embodiment, the duplexer of the first kind is put by power
Big device PA and low-noise amplifier LNA connection transceivers, the duplexer of the first kind also it is corresponding connect RF switch (such as
The first RF switch of Band8 connections 10, the second RF switch of Band3 connections 11, the RF switch 12 of Band7 connections the 3rd), radio frequency
Switch is correspondingly connected to RF coupler (for example, the first RF switch 10 connects the first RF coupler 20, the second RF switch
11 the second RF couplers 21 of connection, the 3rd RF switch 12 connect the 3rd RF coupler 22), the output end of RF coupler
Connect transceiver, (wide-band multiplexer is specially wide-band triplexer to RF switch connection wide-band multiplexer 3, the first radio frequency
Switch 10 is connected to the low-frequency range connection end of wide-band triplexer, and the second RF switch 11 is connected to the intermediate frequency of wide-band triplexer
Section connection end, the 3rd RF switch 12 are connected to the high band connection end of wide-band multiplexer), wide-band triplexer is also connected with day
Line 4, so as to be realized by the duplexer of multiple first kind, three RF switches and wide-band triplexer under three carrier waves
Row polymerization, and power detection can be carried out by three RF couplers respectively.Present embodiment for first kind duplexer, penetrate
Frequency switch, the number of RF coupler are not specifically limited, and the structure of foregoing various pieces are also not specifically limited,
Those skilled in the art can use well known mode to realize duplexer, RF switch, RF coupler of the first kind etc..
Because RF coupler and RF switch are integrated in a chips, so being integrated in RF switch chip multiple
During the RF switch of frequency band, difficulty is very big.Therefore, present embodiment is intended to break the integrated of RF switch and RF coupler
Structure, by the way that at least part of RF coupler (i.e. coupling unit) is formed on radio frequency substrate, so as at least by radio frequency coupling
The coupling unit of clutch departs from away from RF switch chip, and then realizes that multiple RF switches are integrated in into a radio frequency opens
Close in chip.So, because the coupling unit of RF coupler is not in RF switch chip, so the radio frequency letter of different frequency bands
The difficulty of number isolation reduce it is a lot so that multiple RF switches are integrated in a RF switch chip (such as
Three RF switches are integrated in RF switch chip), with the RF switch of single RF switch core Embedded
Number increases, then the advantage of present embodiment is more obvious.Specifically, RF coupler can include coupling unit and load
End.Coupling unit is connected to load end.Wherein, coupling unit is, for example, coupling inductance, and load end is, for example, resistance.This embodiment party
The concrete structure of formula RF coupling device is not limited.The coupling unit of RF coupler is formed at radio frequency substrate, such as by coupling
Close inductance paster to be arranged on radio frequency substrate, because the main wiring portion of RF coupler is all in radio frequency substrate, so can
The cloth RF coupler in RF switch chip is avoided, so as to be effectively reduced the size of RF switch chip.Radio frequency coupling
The load end of clutch can also be integrated in RF switch chip.Pass through the passive device such as the resistance on RF switch chip and electric capacity
Part, linking between RF switch and the load end of RF coupler can be conveniently realized.In some instances, can also be
RF coupler is integrally formed in radio frequency substrate, subelement of the present embodiment for RF coupler and RF switch chip
Integrated relationship be not specifically limited.In the prior art, because RF coupler and RF switch are integrated in a RF switch
In chip, in order to save the area of RF switch chip, the size of the coupling unit of RF coupler is extremely limited, and
Coupling unit is formed directly on radio frequency substrate by present embodiment, so be advantageous to the size of appropriate increase coupling unit, from
And advantageously reduce the loss of radio frequency Insertion Loss.
The radio frequency front-end device of present embodiment also includes：Coupler switch element.In the radio frequency front-end device shown in Fig. 3
When only supporting the descending polymerization of three carrier waves, in transmission power signal, a RF coupler job, now, only one are only needed
RF coupler exports.The RF coupler of three different frequency bands of radio frequency front-end device can pass through a public output
CPL_Out connection transceivers, so needing the output switching of three RF couplers to radio frequency by coupler switch element
The public output of coupler.As shown in figure 4, coupler switch element can be a SP3T switch.SP3T is opened
The moved end of pass correspondingly connects the public output CPL_Out of RF coupler, three of single-pole double-throw switch (SPDT) not moved end connect respectively
Meet the output end O of the first RF coupler 201, the second RF coupler 21 output end O2And the 3rd RF coupler 22
Output end O3。
In some instances, the radio frequency front-end device shown in Fig. 3 can not only support the descending polymerization of three carrier waves, can also prop up
Hold the up polymerization of dual carrier.Therefore, in transmission power signal, it is necessary to which two RF couplers work simultaneously.Radio-frequency front-end fills
The RF coupler for three different frequency bands put can connect transceiver by two public outputs.Now, the first radio frequency coupling
The output end of clutch 20, the second RF coupler 21 and the 3rd RF coupler 22 can also be connected by coupler switch element
Connect two public outputs.As shown in figure 5, coupler switch element can include three single-pole double-throw switch (SPDT)s.Wherein, each hilted broadsword
Moved end does not connect two public outputs (CPL_Out1 and CPL_Out2) to two of commutator respectively, and each single-pole double throw is opened
The moved end of pass connects the output end (O of RF coupler respectively1、O2、O3)。
In other examples, the radio frequency front-end device shown in Fig. 3 can not only support the descending polymerization of three carrier waves, can also prop up
Hold the up polymerization of three carrier waves.Therefore, in transmission power signal, it is necessary to which three RF couplers work simultaneously.Radio-frequency front-end fills
The RF coupler for three different frequency bands put can connect transceiver by three SP3T switch.As shown in fig. 6, coupling
Device switch element can include three SP3T switch.Wherein, moved end does not connect three to three of each SP3T switch respectively
Individual public output (CPL_Out1, CPL_Out2 and CPL_Out3), the moved end of each SP3T switch connects radio frequency respectively
Output end (the O of coupler1、O2、O3)。
Above it is seen that, when radio frequency front-end device only supports that descending carrier polymerize, the switching of coupler switch element
Number of active lanes can be determined according to the number of RF coupler, and uplink transmission power detection letter is realized using 1 hilted broadsword L throw switch
Number switching.When radio frequency front-end device supports that up, descending carrier polymerize simultaneously, coupler switch element can be by multiple lists
Knife P throw switches are formed, wherein, P is the natural number more than 1 and less than or equal to L, and P number can be according to up-link carrier polymerization
Carrier number determines that the number of switch still can determine according to the number of RF coupler.Wherein, hilted broadsword P throw switches is dynamic
End is correspondingly connected to the output end of RF coupler, and the individual not moved ends of P of hilted broadsword P throw switches connect transceiver respectively.By using
The coupler switch element of present embodiment, drastically increases the flexibility of carrier aggregation.
Present embodiment is by the related passive device of multiple RF switches, coupler switch element and RF coupler
(such as load end of RF coupler) is integrated in a RF switch chip, compared with prior art, can significantly be carried
The integrated level of firing frequency switch chip, the area of RF switch chip occupancy is greatly saved so that radio frequency front-end device accounts for
It is smaller with area.And the size design of the coupling unit of RF coupler is more flexible, therefore it is more conducive to reduce radio frequency Insertion Loss.This
Embodiment compared with prior art, by optimizing RF switch chip integration, can significantly reduce cost.
Third embodiment of the invention is related to a kind of electronic equipment, including penetrating as described in first or second embodiment
Frequency fore device.The electronic equipment of present embodiment can be smart mobile phone, tablet personal computer, vehicle carried video, internet of things equipment with
And wearable device etc..Present embodiment is not particularly limited to electronic equipment.
Compared with prior art, present embodiment electronic equipment is when realizing carrier aggregation radio-frequency front-end, by radio frequency
The mode of integrated RF coupler can effectively reduce the area of RF switch chip in substrate, simultaneously as RF-coupled
Not in RF switch chip, the difficulty of the isolation of different frequency bands radiofrequency signal reduces much device, therefore can be by multiple radio frequencies
Switch is integrated into same RF switch chip, so that cost is greatly reduced.In addition, integrated in RF switch chip
RF coupler can cause the small-sized of RF coupler, so cause the loss of radio frequency Insertion Loss larger, and the present invention can lead to
Cross the size reduction radio frequency loss of increase RF coupler.And present embodiment can also greatly reduce RF switch chip
Size so that radio-frequency front-end layout it is simpler.
It is noted that each module involved in present embodiment is logic module, and in actual applications, one
Individual logic unit can be a part for a physical location or a physical location, can also be with multiple physics lists
The combination of member is realized.In addition, in order to protrude the innovative part of the present invention, will not be with solving institute of the present invention in present embodiment
The unit that the technical problem relation of proposition is less close introduces, but this is not intended that in present embodiment and other lists are not present
Member.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific embodiment of the present invention,
And in actual applications, can to it, various changes can be made in the form and details, without departing from the spirit and scope of the present invention.
Claims (8)
- A kind of 1. radio frequency front-end device, it is characterised in that including：Radio frequency substrate, RF switch chip and L RF-coupled Device；Wherein, the L is the natural number more than 1；The RF coupler includes coupling unit, and the coupling unit is formed at the radio frequency substrate, the RF switch Chip is arranged at the radio frequency substrate；L RF switch is integrated with the RF switch chip, the L RF switch is correspondingly connected to the L radio frequency Coupler.
- 2. radio frequency front-end device according to claim 1, it is characterised in that the RF coupler also includes and the coupling Close the load end of unit connection；The load end is integrated in the RF switch chip.
- 3. radio frequency front-end device according to claim 1, it is characterised in that the RF coupler is integrally formed in described Radio frequency substrate.
- 4. radio frequency front-end device according to claim 1, it is characterised in that the radio frequency front-end device also includes coupler Switch element and transceiver；The coupler switch element is connected between output end and the transceiver of the L RF coupler switch；The coupler switch element is integrated in the RF switch chip.
- 5. radio frequency front-end device according to claim 4, it is characterised in that the coupler switch element is that hilted broadsword L is thrown Switch.
- 6. radio frequency front-end device according to claim 4, it is characterised in that the coupler switch element includes：L single Knife P throw switches, the P are the natural number more than 1 and less than or equal to L；The moved end of the hilted broadsword P throw switches is correspondingly connected to the output end of the RF coupler, the P of the hilted broadsword P throw switches Individual not moved end connects the transceiver respectively.
- 7. radio frequency front-end device according to claim 1, it is characterised in that the radio frequency front-end device also includes：Wideband Section multiplexer；L connection end of the wide-band multiplexer is connected respectively the L RF switch.
- 8. a kind of electronic equipment, it is characterised in that including the radio frequency front-end device as any one of claim 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710770962.9A CN107425873A (en) | 2017-08-31 | 2017-08-31 | Radio frequency front-end device and the electronic equipment for including it |
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|---|---|---|---|
| CN201710770962.9A CN107425873A (en) | 2017-08-31 | 2017-08-31 | Radio frequency front-end device and the electronic equipment for including it |
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Cited By (8)
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| CN108494432A (en) * | 2018-05-18 | 2018-09-04 | 锐石创芯（深圳）科技有限公司 | Radio frequency front-end with low power consumption and electronic equipment comprising it |
| CN109039350A (en) * | 2018-06-29 | 2018-12-18 | 江苏肯立科技股份有限公司 | A kind of 8 × 8 RF switch matrix of high-isolation |
| CN109347508A (en) * | 2018-10-31 | 2019-02-15 | 维沃移动通信有限公司 | A kind of mobile terminal and power detecting method |
| CN110098840A (en) * | 2019-04-30 | 2019-08-06 | 维沃移动通信有限公司 | A kind of radio-frequency unit and terminal device |
| CN110113063A (en) * | 2019-06-27 | 2019-08-09 | Oppo广东移动通信有限公司 | A kind of RF front-end circuit and terminal device |
| CN111106802A (en) * | 2019-12-17 | 2020-05-05 | 锐石创芯(重庆)科技有限公司 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
| CN113541725A (en) * | 2021-09-14 | 2021-10-22 | 上海豪承信息技术有限公司 | Diversity switch assembly, radio frequency device and communication equipment |
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
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2017
- 2017-08-31 CN CN201710770962.9A patent/CN107425873A/en not_active Withdrawn
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| CN108494432A (en) * | 2018-05-18 | 2018-09-04 | 锐石创芯（深圳）科技有限公司 | Radio frequency front-end with low power consumption and electronic equipment comprising it |
| CN109039350A (en) * | 2018-06-29 | 2018-12-18 | 江苏肯立科技股份有限公司 | A kind of 8 × 8 RF switch matrix of high-isolation |
| CN109039350B (en) * | 2018-06-29 | 2019-05-21 | 江苏肯立科技股份有限公司 | A kind of 8 × 8 RF switch matrix of high-isolation |
| CN109347508A (en) * | 2018-10-31 | 2019-02-15 | 维沃移动通信有限公司 | A kind of mobile terminal and power detecting method |
| CN110098840A (en) * | 2019-04-30 | 2019-08-06 | 维沃移动通信有限公司 | A kind of radio-frequency unit and terminal device |
| CN110113063A (en) * | 2019-06-27 | 2019-08-09 | Oppo广东移动通信有限公司 | A kind of RF front-end circuit and terminal device |
| CN111106802A (en) * | 2019-12-17 | 2020-05-05 | 锐石创芯(重庆)科技有限公司 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
| CN111106802B (en) * | 2019-12-17 | 2021-03-09 | 锐石创芯(重庆)科技有限公司 | 5G radio frequency front end power switching chip compatible with APT and ET modes |
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| CN113541725A (en) * | 2021-09-14 | 2021-10-22 | 上海豪承信息技术有限公司 | Diversity switch assembly, radio frequency device and communication equipment |
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Address after: 518035 Shenzhen International Innovation Center, No. 1006, Shennan Road, Huafu street, Futian District, Shenzhen, Guangdong 203, E 203 Applicant after: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE Address before: 361026 Xiamen City, Xiamen, Fujian, No. 4, No. 45, south two road, No. 02, 800 Applicant before: RADROCK (XIAMEN) TECHNOLOGY CO.,LTD. |
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Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 203, building e, Shenzhen International Innovation Center, No. 1006, Shennan Avenue, Huafu street, Futian District, Shenzhen Applicant before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20171201 |
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| WW01 | Invention patent application withdrawn after publication |