CN107419294A - A kind of CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles - Google Patents

A kind of CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles Download PDF

Info

Publication number
CN107419294A
CN107419294A CN201710595922.5A CN201710595922A CN107419294A CN 107419294 A CN107419294 A CN 107419294A CN 201710595922 A CN201710595922 A CN 201710595922A CN 107419294 A CN107419294 A CN 107419294A
Authority
CN
China
Prior art keywords
cds
core shell
shell structure
mos
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710595922.5A
Other languages
Chinese (zh)
Other versions
CN107419294B (en
Inventor
黄柏标
朱相林
王朋
王泽岩
张晓阳
秦晓燕
刘媛媛
张倩倩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong University
Original Assignee
Shandong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong University filed Critical Shandong University
Priority to CN201710595922.5A priority Critical patent/CN107419294B/en
Publication of CN107419294A publication Critical patent/CN107419294A/en
Application granted granted Critical
Publication of CN107419294B publication Critical patent/CN107419294B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/02—Hydrogen or oxygen
    • C25B1/04—Hydrogen or oxygen by electrolysis of water
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight

Abstract

The invention discloses a kind of CdS/MoS2The preparation method of/Mo bilayer core shell structure optoelectronic poles, step are as follows：Using molybdenum net as substrate, using soluble cadmium salt as cadmium source, cadmium metal is deposited on to molybdenum is online, the molybdenum net deposited is placed in hydrogen sulfide atmosphere and vulcanized, that is, obtains CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles.CdS/MoS prepared by the present invention2The electricity conversion of/Mo bilayer core shell structure optoelectronic poles is high, there is larger application prospect.Through experimental studies have found that CdS/MoS2/Mo bilayer core shell structure optoelectronic pole optical electro-chemistry H2-producing capacities, photoelectric current is more than three milliamperes in optical electro-chemistry test, in main absorbance region electricity conversion close to 20%, performance is better than the vulcanization cadmium electrode prepared on traditional FTO glass.

Description

A kind of CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles
Technical field
The present invention relates to PhotoelectrochemicalTechnique Technique field, more particularly to a kind of CdS/MoS2/ Mo bilayer core shell structure photoelectricity Pole and its preparation method and application.
Background technology
The solar energy for the low-density for being difficult to collect can be changed into what high density easily utilized using semiconductor light-catalyst Electric energy and chemical energy turn into recent years one of most active research field in the world.It is especially only in terms of optical electro-chemistry produces hydrogen Special advantage causes the extensive concern of countries in the world scientist, thus it is carried out extensive theoretical and experimental study will have it is non- Often important strategy and realistic meaning.
The general principle of photodissociation aquatic products hydrogen is built upon on the basis of band theory, and its whole process can be divided into three Part：(1) generation of carrier.When incident light photons energy is more than the band gap of semiconductor, electronics will be excited, from valence band Conduction band is transitted to, while a positively charged hole is left in valence band；(2) separation and migration of carrier.Above-mentioned photoproduction Electronics and hole are migrated to catalyst surface from body phase；(3) reaction of the surface carrier with water.When the valence band potential of semiconductor is high In VO2/H2OWater will generate oxygen by Hole oxidation during=1.23V (vs.NHE, pH=7).When the potential of conduction band is less than VH+/H2 During=0V (vs.NHE, pH=7), water will be reduced to hydrogen by light induced electron.The quantum efficiency of photocatalytic water is mainly restricted in light The light abstraction width of catalyst, carrier efficiently separate and three processes such as the redox reaction of surface water.
CdS is visible ray photocatalytic water catalyst the most typical, and its energy gap is 2.4eV, has preferable visible ray Absorbent properties.Meanwhile CdS caused light induced electrons after excited by visible light can be transferred to material surface, there is stronger reduction Ability, it smoothly can reduce hydrogen ion and produce hydrogen, therefore, good effect can be played on solving energy problem.But One pack system CdS quantum efficiency is low, and light induced electron is easily compound with hole, greatly reduces the efficiency of its photocatalysis performance.For Solve these problems, it is many study the preparation that concentrates on CdS materials and it is modified on, include different-shape and crystal formation CdS conjunction Into the modification of material and the system design of photoelectrocatalysiwater water electrolysis, to improve photoelectric catalytically active.At present mainly by with its He optimizes modification at the compound of co-catalyst to one pack system CdS.Transition metal, particularly some noble metals, are used frequently as The co-catalyst of catalysis material.But because noble metal nature reserves are limited, it is expensive, the conjunction of photocatalytic system can be increased Into cost；Also researcher utilizes MoS2As auxiliary agent, CdS/MoS is prepared for by high temperature sintering technique2Compound production hydrogen light is urged Agent, but the preparation method temperature is higher, is unfavorable for the structure regulating of catalyst and the further investigation of its architecture element.
To sum up, in all problems for restricting photocatalysis technology practical application at present, it is most important that improve photochemical catalyst pair The utilization ratio of luminous energy.Wherein how to improve the carrier transport efficiency of photochemical catalyst is a research emphasis, is had critically important Theoretical and practical significance.
The content of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of CdS/MoS2/ Mo bilayer nucleocapsid knots Structure optoelectronic pole and preparation method thereof.The optoelectronic pole of the present invention has special CdS/MoS2/ Mo bilayer core shell structures, and to be formed CdS/MoS2Hetero-junctions, hydrogen is produced available for for efficient optical electro-chemistry.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of the first aspect of the present invention, there is provided CdS/MoS2The preparation method of/Mo bilayer core shell structure optoelectronic poles, step It is as follows：
Using molybdenum net as substrate, using soluble cadmium salt as cadmium source, cadmium metal is deposited on to the molybdenum that molybdenum is online, will deposit Net, which is placed in hydrogen sulfide atmosphere, to be vulcanized, that is, obtains CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles.
In above-mentioned preparation method, molybdenum net is cleaned by ultrasonic with concentrated hydrochloric acid and concentrated alkali solution respectively, then uses deionized water again, Ethanol, acetone are cleaned by ultrasonic.
In above-mentioned preparation method, the soluble cadmium salt is selected from cadmium nitrate, caddy or cadmium acetate.
In above-mentioned preparation method, it is online by way of controlling deposition voltage and sedimentation time cadmium metal to be deposited on into molybdenum.
In above-mentioned preparation method, it is preferred that the deposition voltage is -1.5 to -2.0V, sedimentation time 600-1200s.
In above-mentioned preparation method, the temperature of vulcanization is 300 DEG C -600 DEG C.
The second aspect of the present invention, there is provided above-mentioned CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles are in light hydrolytic hydrogen production Application.
The third aspect of the present invention, there is provided a kind of smooth hydrolytic hydrogen production system, the smooth hydrolytic hydrogen production system is with above-mentioned CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles are used as to electrode, saturation silver/silver chloride electrode as working electrode, platinum electrode As reference electrode.
Further, also included in the smooth hydrolytic hydrogen production system：Electrolyte solution；The electrolyte solution is preferably： 0.25 mol/L vulcanized sodium, 0.35 mol/L sodium sulfite.
Beneficial effects of the present invention：
(1) CdS/MoS of the invention2The preparation method of/Mo bilayer core shell structure optoelectronic poles is simple, and base is used as using molybdenum net Bottom, by controlling deposition voltage and sedimentation time parameter, cadmium metal layer is formed in molybdenum deposited thereon；Then in hydrogen sulfide atmosphere Vulcanized, while CdS is generated, metal Mo is by partial vulcanization into MoS2, ultimately form CdS/MoS2/ Mo bilayer nucleocapsid knots Structure optoelectronic pole, preparation process are reacted without high temperature sintering.
(2) CdS/MoS prepared by the present invention2/ Mo bilayer core shell structure optoelectronic poles have special CdS/MoS2/ Mo is double-deck Core shell structure, and form CdS/MoS2Hetero-junctions promotes carrier separation.
(3) CdS/MoS prepared by the present invention2The electricity conversion of/Mo bilayer core shell structure optoelectronic poles is high, has larger Application prospect.Through experimental studies have found that CdS/MoS2/Mo bilayer core shell structure optoelectronic pole optical electro-chemistry H2-producing capacities, photoelectrochemical Photoelectric current is more than three milliamperes in test, and in main absorbance region electricity conversion close to 20%, performance is better than traditional FTO glass The vulcanization cadmium electrode prepared on glass.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing further understanding of the present application, and the application's shows Meaning property embodiment and its illustrate be used for explain the application, do not form the improper restriction to the application.
Fig. 1 is the X ray picture of optoelectronic pole of the present invention；
Fig. 2 is that the SEM of optoelectronic pole of the present invention schemes；
Fig. 3 is that the XPS of optoelectronic pole of the present invention schemes；In figure, A is the XPS without HCl treatment surface, and B is that HCl treatment is molten Fall the XPS after CdS；
Fig. 4 is photoelectric current comparison diagram of the present invention；
Fig. 5 is light photoelectric transformation efficiency comparison diagram of the present invention.
Embodiment
It is noted that described further below is all exemplary, it is intended to provides further instruction to the application.It is unless another Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
It is most important in all problems for restricting photocatalysis technology practical application at present as background technology is introduced It is to improve utilization ratio of the photochemical catalyst to luminous energy.Based on this, the present invention proposes a kind of CdS/MoS2/ Mo bilayer core shell structures Optoelectronic pole and preparation method thereof.
In a kind of embodiment of the application, there is provided a kind of CdS/MoS2The system of/Mo bilayer core shell structure optoelectronic poles Preparation Method, step are as follows：
(1) molybdenum net is cleaned by ultrasonic 10 hours with concentrated hydrochloric acid and concentrated alkali solution respectively, then with deionized water, ethanol, third The surface-brightening of ketone ultrasonic cleaning；
(2) soluble cadmium salt is dissolved in deionized water；
(3) that cadmium metal is deposited on into molybdenum by way of controlling deposition voltage and sedimentation time is online；
(4) the molybdenum net deposited is placed in hydrogen sulfide atmosphere and can obtain desired photoelectricity in 300 DEG C of -600 DEG C of vulcanizations Pole.
As preferable scheme, the soluble cadmium salt is cadmium nitrate, caddy or cadmium acetate.
As preferable scheme, the deposition voltage is -1.5 to -2.0V, sedimentation time 600-1200s.Deposition voltage Cadmium metal can be influenceed in the online deposition effect of molybdenum with parameters such as sedimentation times, so as to influence the performance of the cadmium sulfide of generation, warp Assay optimization is found, high-sequential, compact structure can be on the net prepared in molybdenum using the deposition voltage and sedimentation time of the application Cadmium sulfide layer.
In order that the technical scheme of the application can clearly be understood by obtaining those skilled in the art, below with reference to tool The embodiment of body describes the technical scheme of the application in detail.
Test material used is the conventional test material in this area in the embodiment of the present invention, can pass through commercial channel It is commercially available.
Embodiment 1：CdS/MoS2The preparation of/Mo bilayer core shell structure optoelectronic poles
(1) molybdenum net is cleaned by ultrasonic 10 hours with concentrated hydrochloric acid and concentrated alkali solution respectively, then with deionized water, ethanol, third The surface-brightening of ketone ultrasonic cleaning；
(2) soluble cadmium salt is dissolved in deionized water；
(3) that cadmium metal is deposited on into molybdenum by way of controlling deposition voltage and sedimentation time is online, deposition voltage for- 1.8V, sedimentation time 1200s；
(4) the molybdenum net deposited is placed in hydrogen sulfide atmosphere and can obtain desired photoelectricity in 300 DEG C of -600 DEG C of vulcanizations Pole.
Structural analysis is carried out to optoelectronic pole manufactured in the present embodiment, as a result respectively as Figure 1-3, wherein, Fig. 1 is this reality The X-ray diffractogram of optoelectronic pole obtained by example is applied, as seen from the figure, there is the cadmium sulfide of generation good crystallinity MoS do not occur2 With other obvious miscellaneous peaks.Fig. 2 is the SEM figures of optoelectronic pole obtained by the present embodiment, and as seen from the figure, electrode surface is by sheet CdS groups Dress parcel shape.Fig. 3 is optoelectronic pole XPS figures obtained by the present embodiment, and Fig. 3 A are the XPS without HCl treatment surface, and Fig. 3 B are hydrochloric acid Processing dissolves away the XPS after CdS.Understand that before processing electrode surface only has CdS layer by XPS results, exposed without Mo substrates.At hydrochloric acid CdS is completely dissolved after reason post processing, surface MoS2, still exposed without Mo substrates.Electricity is can conclude that with reference to SEM and XPS Has CdS/MoS2/ Mo bilayer core shell structures.
Application examples 1：Photoelectric activity is tested：
Using optoelectronic pole prepared by embodiment 1 as working electrode, platinum electrode is used as to electrode, saturation silver/silver chloride electrode As reference electrode, 0.25 mol/L vulcanized sodium, for 0.35 mol/L sodium sulfite as electrolyte solution, light source is 300W xenons Lamp.Photoelectric activity is recorded by three-electrode electro Chemical work station.As a result as shown in Figure 4 and Figure 5.
Photoelectric activity test shows there are the CdS optoelectronic poles prepared on FTO glass relatively, and optoelectronic pole prepared by the present invention has Higher photoelectric transformation efficiency.
Detection and the analysis integrated optoelectronic pole that the present embodiment obtains that demonstrates above is that have efficient opto-electronic conversion Efficiency.And there is application value in terms of optical electro-chemistry produces hydrogen.
Comparative example 1：
50 ml deionized waters, 1 mM of cadmium nitrate, 1 mM of thiocarbamide and 0.5 milli are added in ptfe autoclave Mole glutathione, by clean FTO glass it is conductive be put into down then 180 degrees Celsius under react 10 hours and obtain CdS/ FTO optoelectronic poles.
Investigate the electricity conversion of the material of optoelectronic pole prepared by the embodiment of the present invention 1 and comparative example 1, the results showed that, The CdS/MoS of the present invention2What the electricity conversion of/Mo bilayer core shell structure optoelectronic poles was prepared apparently higher than documents 1 CdS/FTO optoelectronic poles.
The preferred embodiment of the application is the foregoing is only, is not limited to the application, for the skill of this area For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.

Claims (10)

  1. A kind of 1. CdS/MoS2The preparation method of/Mo bilayer core shell structure optoelectronic poles, it is characterised in that step is as follows：
    Using molybdenum net as substrate, using soluble cadmium salt as cadmium source, cadmium metal is deposited on to molybdenum is online, the molybdenum net deposited is put Vulcanized in hydrogen sulfide atmosphere, that is, obtain CdS/MoS2/ Mo bilayer core shell structure optoelectronic poles.
  2. 2. preparation method according to claim 1, it is characterised in that by molybdenum net respectively with concentrated hydrochloric acid and concentrated alkali solution ultrasound Cleaning, then uses deionized water, ethanol again, and acetone is cleaned by ultrasonic.
  3. 3. preparation method according to claim 1, it is characterised in that the soluble cadmium salt is selected from cadmium nitrate, caddy Or cadmium acetate.
  4. 4. preparation method according to claim 1, it is characterised in that by way of controlling deposition voltage and sedimentation time It is online that cadmium metal is deposited on molybdenum.
  5. 5. preparation method according to claim 4, it is characterised in that the deposition voltage is -1.5 to -2.0V, during deposition Between be 600-1200s.
  6. 6. preparation method according to claim 1, it is characterised in that the temperature of vulcanization is 300 DEG C -600 DEG C.
  7. 7. the CdS/MoS that the method described in claim any one of 1-6 is prepared2/ Mo bilayer core shell structure optoelectronic poles.
  8. 8. the CdS/MoS described in claim 72/ Mo bilayer core shell structure optoelectronic poles are in the application in light hydrolytic hydrogen production.
  9. 9. a kind of smooth hydrolytic hydrogen production system, it is characterised in that the smooth hydrolytic hydrogen production system is with the CdS/ described in claim 7 MoS2/ Mo bilayer core shell structure optoelectronic poles are used as to electrode, saturation silver/silver chloride electrode conduct as working electrode, platinum electrode Reference electrode.
  10. 10. light hydrolytic hydrogen production system as claimed in claim 9, it is characterised in that also included in the smooth hydrolytic hydrogen production system： Electrolyte solution；The electrolyte solution is：0.25 mol/L vulcanized sodium, 0.35 mol/L sodium sulfite.
CN201710595922.5A 2017-07-20 2017-07-20 A kind of CdS/MoS2/ Mo bilayer core-shell structure optoelectronic pole Active CN107419294B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710595922.5A CN107419294B (en) 2017-07-20 2017-07-20 A kind of CdS/MoS2/ Mo bilayer core-shell structure optoelectronic pole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710595922.5A CN107419294B (en) 2017-07-20 2017-07-20 A kind of CdS/MoS2/ Mo bilayer core-shell structure optoelectronic pole

Publications (2)

Publication Number Publication Date
CN107419294A true CN107419294A (en) 2017-12-01
CN107419294B CN107419294B (en) 2019-02-19

Family

ID=60429854

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710595922.5A Active CN107419294B (en) 2017-07-20 2017-07-20 A kind of CdS/MoS2/ Mo bilayer core-shell structure optoelectronic pole

Country Status (1)

Country Link
CN (1) CN107419294B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108906080A (en) * 2018-07-11 2018-11-30 中国科学技术大学 A kind of CdS/Cu2S/Co base photoelectrocatalysimaterial material and preparation method thereof
CN112221518A (en) * 2020-10-21 2021-01-15 广东工业大学 CdS/MoSxComposite material and one-step electrochemical deposition preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140045295A1 (en) * 2012-08-09 2014-02-13 International Business Machines Corporation Plasma annealing of thin film solar cells
CN105044180A (en) * 2015-06-29 2015-11-11 江苏大学 Preparation method and application of heterojunction photoelectrode
CN105664977A (en) * 2016-02-03 2016-06-15 中国科学院化学研究所 Molybdenum disulfide-cadmium sulfide nanometer composite material and preparing method and application thereof
CN105688945A (en) * 2016-03-22 2016-06-22 福州大学 Composite photo-catalyst with molybdenum disulfide (MoS2) nanosheet/cadmium sulfide (CdS) nanowire core-shell structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140045295A1 (en) * 2012-08-09 2014-02-13 International Business Machines Corporation Plasma annealing of thin film solar cells
CN105044180A (en) * 2015-06-29 2015-11-11 江苏大学 Preparation method and application of heterojunction photoelectrode
CN105664977A (en) * 2016-02-03 2016-06-15 中国科学院化学研究所 Molybdenum disulfide-cadmium sulfide nanometer composite material and preparing method and application thereof
CN105688945A (en) * 2016-03-22 2016-06-22 福州大学 Composite photo-catalyst with molybdenum disulfide (MoS2) nanosheet/cadmium sulfide (CdS) nanowire core-shell structure

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
WEIXIA GU 等: "Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells", 《NANOSCALE RESEARCH LETTERS》 *
XU ZONG 等: "Photocatalytic H2 Evolution on MoS2/CdS Catalysts under Visible Light Irradiation", 《J. PHYS. CHEM. C》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108906080A (en) * 2018-07-11 2018-11-30 中国科学技术大学 A kind of CdS/Cu2S/Co base photoelectrocatalysimaterial material and preparation method thereof
CN112221518A (en) * 2020-10-21 2021-01-15 广东工业大学 CdS/MoSxComposite material and one-step electrochemical deposition preparation method and application thereof

Also Published As

Publication number Publication date
CN107419294B (en) 2019-02-19

Similar Documents

Publication Publication Date Title
Saraswat et al. Recent advancements in semiconductor materials for photoelectrochemical water splitting for hydrogen production using visible light
Alfaifi et al. Photoelectrochemical solar water splitting: From basic principles to advanced devices
Zhong et al. Photo-assisted electrodeposition of cobalt–phosphate (Co–Pi) catalyst on hematite photoanodes for solar water oxidation
Feng et al. Facile fabrication of sandwich structured WO3 nanoplate arrays for efficient photoelectrochemical water splitting
CN104711627B (en) Method for preparing hydrogen through photoanode-photovoltaic battery coupled dual-illumination fully-photic-driven decomposition of water
Sun et al. Enabling silicon for solar-fuel production
Tsui et al. Modification of TiO2 nanotubes by Cu2O for photoelectrochemical, photocatalytic, and photovoltaic devices
CN106498372B (en) Light deposition prepares Bi/BiVO4The method of composite photoelectric anode material
Shen Toward efficient solar water splitting over hematite photoelectrodes
Jung et al. Effect of the Si/TiO2/BiVO4 heterojunction on the onset potential of photocurrents for solar water oxidation
CN102352524B (en) Metal oxide modified TiO2 nanometer tube array electrode and preparation method thereof
CN104988533B (en) TiO2/BiVO4Light anode material and preparation method thereof
Cheng et al. Strategies for improving photoelectrochemical water splitting performance of Si‐based electrodes
CN106894024B (en) Accumulation energy type tungstic acid/strontium titanates/nano titania composite film photo-anode preparation method
CN103361689A (en) Method for preparing titanium dioxide nanotube array photoelectrode
JPWO2012137240A1 (en) Semiconductor element
Minggu et al. Bilayer n-WO3/p-Cu2O photoelectrode with photocurrent enhancement in aqueous electrolyte photoelectrochemical reaction
Liu et al. Carbon membrane bridged ZnSe and TiO2 nanotube arrays: fabrication and promising application in photoelectrochemical water splitting
CN111359609A (en) Visible light response iron oxide/cuprous oxide photocatalytic film and preparation method thereof
Jin et al. Fabrication of CdSe/ZnIn2S4 modified TiO2 nanotube composite and its application in photoelectrochemical cathodic protection
Dubey et al. Synthesis of self-aligned and vertically oriented carbon incorporated titania nanotube for improved photoelectrochemical hydrogen generation
JP5207104B2 (en) Electrode, method for producing the same, and dye-sensitized solar cell
Ko et al. Simultaneous enhancement in charge separation and interfacial charge transfer of BiVO4 photoanode for photoelectrochemical water oxidation
CN108511198A (en) Ni-doped BiVO4Thin-film photoelectric anode, preparation method and application thereof
CN107419294B (en) A kind of CdS/MoS2/ Mo bilayer core-shell structure optoelectronic pole

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant