CN107403833A - A kind of compound semiconductor metal contacts electrode - Google Patents
A kind of compound semiconductor metal contacts electrode Download PDFInfo
- Publication number
- CN107403833A CN107403833A CN201710266352.5A CN201710266352A CN107403833A CN 107403833 A CN107403833 A CN 107403833A CN 201710266352 A CN201710266352 A CN 201710266352A CN 107403833 A CN107403833 A CN 107403833A
- Authority
- CN
- China
- Prior art keywords
- electrode
- metal
- ethylmercurichlorendimides
- compound semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 84
- 239000002184 metal Substances 0.000 title claims abstract description 84
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 150000001875 compounds Chemical class 0.000 title claims abstract description 29
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 42
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 126
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 58
- 239000010931 gold Substances 0.000 abstract description 43
- 239000010949 copper Substances 0.000 abstract description 38
- 239000010936 titanium Substances 0.000 abstract description 37
- 229910045601 alloy Inorganic materials 0.000 abstract description 19
- 239000000956 alloy Substances 0.000 abstract description 19
- 229910052697 platinum Inorganic materials 0.000 abstract description 18
- 229910052737 gold Inorganic materials 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052752 metalloid Inorganic materials 0.000 abstract description 9
- 150000002738 metalloids Chemical class 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 8
- 239000010970 precious metal Substances 0.000 abstract description 5
- 229910052732 germanium Inorganic materials 0.000 abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 25
- 238000012360 testing method Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
Abstract
The invention belongs to technical field of semiconductors.The invention discloses a kind of compound semiconductor metal to contact electrode, platinum Pt in traditional non-alloyed metalloid electrode Ti/Pt/Au, Pt/Ti/Pt/Au and alloy type metal electrode AuGe/Ni/Au and gold germanium AuGe is substituted with palladium Pd or palladium germanium Pd/Ge, and top layer precious metal Au is replaced with copper Cu or silver-colored Ag, obtain comprising metal conducting layer, tack coat and comprising metal conducting layer, diffusion barrier, adhesive linkage two kinds of Metal contact electrodes, wherein metal conducting layer is Cu or Ag layers, diffusion barrier is Pd or Ti/Pd layers, adhesive linkage Ti, Pd or Pd/Ge layer.Compound semiconductor metal contact electrode in the present invention has contact resistance is low, intrinsic conductivity is high, heat endurance is good, is connected with semiconductor bonding force strong and the advantages such as manufacturing cost is low.
Description
Technical field
The present invention relates to technical field of semiconductors, and electrode is contacted more particularly, to a kind of compound semiconductor metal.
Background technology
Smart mobile phone rapidly enters 4G, 5G epoch, and under the drive of Internet of Things industry, III-V compound semiconductor
Multimode multi-frequency microwave radio power device based on GaAs is due to its high electron mobility, high power, high-frequency, low noise
Numerous premium properties such as sound, high-gain, anti-natural radiation rapidly become high-end communication electronics product, illumination, military aviation etc.
The main flow device in field.And the contact resistance and metal electrode of the semiconductor and metal electrode in this kind of high-end electronic device are in itself
Electric conductivity be decision and influence this kind of semiconductor devices can reach the high frequency of its expected design, high speed, high current density,
The key of the excellent performances such as high power requirement.
It is widely used at present in compound semiconductor device and the metal electrode of Technical comparing maturation has non-alloyed eka-gold
Belong to electrode Ti/Pt/Au, Pt/Ti/Pt/Au and alloy type metal electrode AuGe/Ni/Au.These compound semiconductor metal electrodes
Structure is applied in heterojunction transistor HBT, double heterojunction transistor BiFET, HEMT pHMET, field-effect
Emitter stage, base stage, colelctor electrode, grid, source electrode and the upper semi-conducting material shape with directly contacting of drain electrode in the components such as pipe FET
Reach the amplification and control to various electric signals into electric channel.These usual multilayer metallic electrodes are made up of three metalloids：1)
As conductive with the superiors' low-resistance metal material of extraneous (package module, substrate or other components) directly wire connection
Layer, golden Au are due to its high ductibility, corrosion resistance and inertia and conduction in most of reactions as traditional preferred material
Property；2) when golden Au directly contacts with semiconductor, the easy thermal diffusion of meeting, which enters in semiconductor structure, turns into uncontrollable doped chemical
And component failure is caused, so needing to add diffusion barrier metal layer between semiconductor and golden Au, such as non-alloyed metalloid electricity
The nickel in platinum Pt and alloy type metal electrode in extremely；3) diffusion barrier of platinum Pt and nickel as golden Au, solves gold
The problem of Au spreads into semiconductor, but the bonding force of this metalloid and semi-conducting material is again inadequate, can produce metal-stripping
Phenomenon, so need to be improved using the strong metal of bonding force, such as in the titanium Ti and alloy type metal electrode of non-alloyed class electrode
AuGe.But these structures are except because the manufacturing that the raw material such as precious metal platinum Pt, gold germanium AuGe and golden Au are brought
Outside the high inferior position of cost, the defects of conductive and stability also be present；As although titanium Ti can improve metal and semiconductor
Bonding strength, but Ti and semiconductor contact formed can band potential barrier it is high, it is necessary to highly doped (~1019/cm3) semiconductor
Low-resistance electric channel could be formed, the semiconductor epitaxial interlayer low with adulterating still shows as the characteristic that Schottky is connected, it is impossible to
Thick electrode is connect as preferable ohm；And although the gold germanium AuGe electrodes of alloy type can be in direct contact with it by Technology for Heating Processing
Semiconductor form the extremely low semiconductor-metal transition layer of contact resistance, and due to interpenetrating between semiconductor alloy so viscous
It is very good with joint efforts, but in Technology for Heating Processing compound semiconductor metal layer not only can Longitudinal extending, can also extend laterally, so as to
Cause horizontal sprawling and the obscurity boundary of electrode of contact resistance；In addition, Au-Ge alloy constant phase states limit its heat treatment need to be
Carried out under conditions of higher than 360 DEG C, at this high temperature, effect not ten sub-argument of the nickel as the golden Au barrier layers spread
Think, the problem of may proceed to spread into semiconductor there is also Upper conductive gold Au and cause component failure；Platinum Pt belongs to valuable gold
Category, the principal element that its market price, which turns into limitation as electrode material, to be researched and developed and promote；Further, with compound semiconductor member
The size of device constantly reduces, and electrode size is also required to diminish therewith, is needed plus component in high frequency, at a high speed, high power is high
Electric current etc. further improves, traditional non-alloyed metal electrode Ti/Pt/Au, Pt/Ti/Pt/Au and alloy type metal electrode
AuGe/Ni/Au has had shown that the huge inferior position in obvious deficiency and cost in various functions.
The content of the invention
To solve the above problems, the invention provides a kind of contact resistance is low, intrinsic conductivity is high, heat endurance is good, with
The bonding force of semiconductor connection is strong and the compound semiconductor metal for the advantages such as manufacturing cost is low contacts electrode.
To achieve the above object, the technical solution adopted by the present invention is as follows：
A kind of compound semiconductor metal contacts electrode, and it is at least successively comprising metal conducting layer, tack coat.
Preferably, metal conducting layer is Cu or Ag layers.
Preferably, adhesive linkage is Ti, Pd or Pd/Ge layer.
Preferably, its structure is Pd/Ge/Cu or Pd/Ge/Ag；Each thickness degree be followed successively by 100~200 Ethylmercurichlorendimides, 1300~
1600 Ethylmercurichlorendimides, 2000~5000 Ethylmercurichlorendimides.
Preferably, this kind of compound semiconductor metal contact electrode is additionally provided with expansion between metal conducting layer and tack coat
Dissipate barrier layer.
Preferably, diffusion barrier is Pd or Ti/Pd layers.
Preferably, its structure is Ti/Pd/Cu or Ti/Pd/Ag；Each thickness degree be followed successively by 100~200 Ethylmercurichlorendimides, 450~
550 Ethylmercurichlorendimides, 5000 Ethylmercurichlorendimides.
Preferably, its structure is Pd/Ti/Pd/Cu or Pd/Ti/Pd/Ag；Each thickness degree be followed successively by 50~100 Ethylmercurichlorendimides,
150~250 Ethylmercurichlorendimides, 400~500 Ethylmercurichlorendimides, 5000 Ethylmercurichlorendimides.
Preferably, its structure is Pd/Ge/Ti/Pd/Cu or Pd/Ge/Ti/Pd/Ag；Each thickness degree is followed successively by 100~
200 Ethylmercurichlorendimides, 1300~1600 Ethylmercurichlorendimides, 150~250 Ethylmercurichlorendimides, 400~500 Ethylmercurichlorendimides, 2000~5000 Ethylmercurichlorendimides.
The present invention is directed to the non-alloyed and alloy type electrode commonly used in conventional compounds semiconductor in conductive and stability
Deficiency, manufacturing cost is high, can not meet the lower work(of high-frequency high-power compound semiconductor device more low resistance continued to develop
The present situation of the requirements such as consumption, is considering：1) metal electrode formed is low with semiconductor contact resistance；2) metal electrode is intrinsic
Electrical conductivity is high；3) heat endurance of metal electrode is good；4) bonding force being connected with semiconductor is strong；5) manufacturing cost low grade
Manufacture and design after requiring, it is proposed that substitute the new of platinum Pt, gold germanium AuGe and golden Au comprehensively with palladium Pd, germanium Ge, copper Cu or silver-colored Ag
Non-alloyed metalloid electrode Ti/Pd/Cu (or Ag) and Pd/Ti/Pd/Cu (or Ag) and alloy type metal electrode Pd/Ge/Cu (or
) and Pd/Ge/Ti/Pd/Cu (or Ag) Ag.
Research test data is shown, by traditional non-alloyed metalloid electrode Ti/Pt/Au, Pt/Ti/Pt/Au and alloy type
Platinum Pt and gold germanium AuGe in metal electrode AuGe/Ni/Au are substituted with palladium Pd or palladium germanium Pd/Ge, and by top layer precious metal Au
Non-alloyed metalloid electrode Ti/Pd/Cu (or Ag), Pd/Ti/Pd/Cu (or Ag) and the conjunction to be formed are replaced with copper Cu or silver-colored Ag
Golden metalloid electrode Pd/Ge/Cu (or Ag), Pd/Ge/Ti/Pd/Cu (or Ag) contact resistance and metal electrode conduction in itself
Rate is substantially basically identical even lower with corresponding platiniferous Pt, golden Au and gold germanium AuGe class precious metals metal electrode, palladium
The depth that Pd impermeable surface oxide layers in alloy heat treatment process enter semiconductor is very shallow so that the metal electrode of formation and half
Bond strength between conductor is high, and bonding uniformity is fine, and metallic compound transition zone extends laterally almost 0.Palladium Pd and Ti/
Pd is also highly effective to the directional diffusion barrier between low resistance conductive metallic gold Au, copper Cu, silver-colored Ag and semiconductor.Pd/Ge classes are closed
The advantages of gold electrode had both maintained improved bonding strength, bonded uniformity, and contact resistance is low, overcomes containing golden Au classes material again
Electrode extends laterally the shortcomings that wide, fuzzy, heat endurance difference of electrode interface etc.；That is, the metals of Pd/Ge in the present invention
Contact in electrode, although being sorted out as a tack coat, it not only has good adhesion strength, while it also can
Play a part of diffusion barrier, prevent conductive metal to be diffused to semiconductor devices, ensure the excellent of semiconductor devices
Performance is unaffected.In addition, go out about 40% because palladium Pd is low compared with platinum Pt market price, it is low compared with gold germanium AuGe go out about 30%,
And copper Cu and silver-colored Ag unit price is only the 5% and 20% of golden Au.The market prices of raw materials of dominance cause device to add after replacement
Every substrate raw material manufacturing cost of work can about reduce by 10~15%.
Therefore, the invention has the advantages that：
The contact resistance of Metal contact electrode in the present invention and traditional electrode are basically identical or slightly reduce, device it is various
Characteristic electronic profile any can be influenceed or slightly improve, especially the degree of adhesion of metal electrode, and uniformity is bonded between electrode-semiconductor,
The horizontal homogeneity and stability of electrical property all slightly improve；The metal electrode of the Pd containing palladium is finer and close, and stress is close to 0；Pd containing palladium
Electrode metal processing after the metal semiconductor metal transition zone that is formed it is thinner, it is controllable, evenly, the flatness of surface topography,
Almost do not extend laterally, so the physical geometry shape of electrode is more only controlled by photoetching and evaporation process, be more beneficial for device chi
Very little further diminution；Palladium Pd fusing points are low, and vapour pressure is high and metal evaporation technique is relative is easier to control；The metal of the Pd containing palladium
Electrode device prediction device service life is also slightly above using the device of platiniferous Pt metal electrodes；Palladium Pd, copper Cu, silver-colored Ag with before
Platinum Pt compared with golden Au, there is absolute market prices of raw materials advantage so that device fabrication raw material manufacturing cost
10~15% can about be reduced.
Embodiment
Technical scheme is further described with reference to embodiment.
Obviously, described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.Based on this
Embodiment in invention, all other reality that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example is applied, belongs to the scope of protection of the invention.
Embodiment
Metal contact electrode is prepared with above-mentioned four kinds of structures, that is, prepares Ti/Pd/Cu (or Ag), Pd/Ti/Pd/Cu (or Ag) and closes
Golden metalloid electrode Pd/Ge/Cu (or Ag), the Metal contact electrode of four kinds of structures of Pd/Ge/Ti/Pd/Cu (or Ag) are as implementation
Example group；Metal contact electrode is prepared with three kinds of structures of the prior art, that is, prepares Ti/Pt/Au, Pt/Ti/Pt/Au and AuGe/
The Metal contact electrode of tri- kinds of structures of Ni/Au group as a comparison.
By in doping concentration~1019/cm3Thickness isN-GaAs test pieces on, by photoetching, respectively
The electron beam evaporation plating and organic solvent of kind metal electrode are peeled off to form figure, are obtained using the method for " transmission line measurement " various non-
Alloy type contacts electrode and contacts electrode by the alloy type of alloy heat treatment process (He, 250~400 DEG C, 1~3 minute)
Metal contact resistance, and intrinsic resistance is measured with reference to vanderburg method, specific data see the table below.
Test data display replace contact resistance and metal electrode the conductance in itself of rear electrode substantially with it is corresponding
The metal electrode of platiniferous Pt, golden Au and gold germanium AuGe class precious metals is basically identical or even lower；Ti/Pt/Au metal electrodes
It is middle to substitute platinum Pt with palladium Pd and use the electrode formed after copper Cu and silver-colored Ag instead, although being still limited in and highly doped (~1019cm-3) semiconductor epitaxial layers combination could form low-resistance Ohmic electrode, still, the electrode of the structure is in manufacturing cost
It is with the obvious advantage, and palladium Pd is stronger to the obstructing capacity of the low resistance conductive metal on upper strata so that the reliability of device and high temperatures
It can increase；It is Pd one layer thin of palladium Pd is added in this structure the advantages of to the inevasible oxygen of compound semiconductor surface
Change layer infiltration it is very strong, although with doping concentration lower slightly (~1018cm-3) semiconductor combine when still show Schottky
The characteristic of metal electrode, but the contact resistance of Pd/Ti/Pd/Cu (or Ag) electrode formed is lower, bond strength is high, with reference to
Evenly, high quality, the Ohmic electrode that electrical property is uniform, heat endurance is high can be formed with highly doped semiconductor；To alloy
The AuGe/Ni/Au electrodes of class carry out substituting the modified alloy type electrode Pd/Ge/Cu (or Ag) and Pd/Ge/Ti/ formed comprehensively
Pd/Cu (or Ag), temperature (350 needed for (250~300 DEG C) heat treatment compared to gold-germanium alloy of temperature that alloy heat treatment needs
~400 DEG C) it is lower, this, which to manufacture and design, adulterates higher, thermally sensitive compound devices, plus palladium Pd with
It is very thin that the transition region thickness of formation is blended between semiconductor, it is very controllable so that the Pd/Ge classes alloy electrode of formation, which maintains, to be changed
Kind bonding strength, bonds uniformity, the advantages of contact resistance is low, overcome again containing golden Au classes material electrodes extend laterally it is wide,
The shortcomings that electrode interface is fuzzy, heat endurance difference etc., so as to become application wider (1018~1019cm-3), stability
Higher, the more preferable high quality ohmic contact electrode of electric conductivity；Both palladium germanium Pd/Ge alloy type metal electrode difference are in Pd/Ge/
Ti/Pd/Cu (or Ag) heat endurance is more preferable, and this is attributed to the fact that the Ti/Pd of addition is led to compound semiconductor and upper strata low resistance
Directional diffusion barrier between electric metal is more effective.
In addition, the mechanical stress test data of single-layer metal film and multilayer metallic electrode shows, palladium Pd films are finer and close, stress
Value is significantly reduced by the tensile stress of original platinum Pt film layers, so that finally mechanical in the entirety of the Metal contact electrode of formation
Stress is close to 0 or even slightly shows compression stress；This data further illustrates the Metal contact electrode after substituting platinum Pt
Mechanical strength can be higher, and the electrical property of the semiconductor layer of contact surface is influenceed also decrease by electrode layer stress itself.
In the processing technology feasibility test of the Metal contact electrode to being replaced with palladium Pd, the metal contact electricity of the Pd containing palladium
Pole has also successfully passed through metal and the adhesion strength in semiconductor active area is tested, macroscopical light after metallic film stripping technology
Learn in microscopic examination and microcosmic scanning electron microscope examination without the phenomenon for any metallic film disengaging occur.To having carried out heat
Material between the Metal contact electrode and semiconductor interface contacting surface of annealing process has carried out X ray diffracting spectrum and Auger electronic lights
Spectrum is researched and analysed and indicated, the thickness of diffusion layer of the metal level electrode of the Pd containing palladium at the interface with semiconductor contact is thinner, more controllable,
And its have can penetrate the inevitable oxide layer of semiconductor surface so that milli it is unobstructive formed with following semiconductor it is various
Compound layer, wherein forming the excessive layer of metallic compound with compound semiconductor, it also effectively prevent golden Au, copper Cu, silver-colored Ag etc.
Low-resistance metal material diffuses to the influence to device operation performance in interface layer.In addition device metal electrodes surface shape
Looks light microscope is examined, and more preferably, the physics of electrode after lithography stripping is deposited in the flatness of electrode surface for also showing the Pd containing palladium
For geometry closer to design requirement, corner flatness more preferably also greatly reduces device in reliability testing due to corner heat
Quick performance is degenerated caused by electric stress is concentrated.
Finally the electrical test data of the various test structures of device is shown, platiniferous Pt and Pd containing palladium Metal contact electrode device
Various features unit for electrical property parameters, such as drain-source saturation current Idss, conducting resistance Ro, crest voltage Vp, leakage current Ileak, grid
Drain breakdown voltage BVGD, chip inspection test Die sort test etc. does not have difference, and the Metal contact electrodes of Pd containing palladium under high temperature
Higher device temperature operation lifetime (HTOL) test display device average accelerated service life can be slightly higher than platiniferous Pt gold contact
Electrode device, and temperature cycles (Temperature Cycling) are tested, and scolding tin flows test knots such as (5X Reflow) again
Also more corresponding platiniferous Pt electrodes are essentially the same for fruit, or even have different degrees of raising and improvement.
It should be appreciated that to those skilled in the art, it can according to the above description be improved or be become
Change, and all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Claims (9)
1. a kind of compound semiconductor metal contacts electrode, it is characterised in that：
It is successively comprising metal conducting layer, tack coat.
A kind of 2. compound semiconductor metal contact electrode according to claim 1, it is characterised in that：
Described metal conducting layer is Cu or Ag layers.
A kind of 3. compound semiconductor metal contact electrode according to claim 1, it is characterised in that：
Described adhesive linkage is Ti, Pd or Pd/Ge layer.
A kind of 4. compound semiconductor metal contact electrode according to claim 1,3 or 4, it is characterised in that：
Its structure is Pd/Ge/Cu or Pd/Ge/Ag；
Its each thickness degree is followed successively by 100~200 Ethylmercurichlorendimides, 1300~1600 Ethylmercurichlorendimides, 2000~5000 Ethylmercurichlorendimides.
A kind of 5. compound semiconductor metal contact electrode according to claim 1, it is characterised in that：
It is additionally provided with diffusion barrier between metal conducting layer and tack coat.
A kind of 6. compound semiconductor metal contact electrode according to claim 5, it is characterised in that：
Described diffusion barrier is Pd or Ti/Pd layers.
A kind of 7. compound semiconductor metal contact electrode according to claim 1,2,3,5 or 6, it is characterised in that：
Its structure is Ti/Pd/Cu or Ti/Pd/Ag；
Its each thickness degree is followed successively by 100~200 Ethylmercurichlorendimides, 450~550 Ethylmercurichlorendimides, 5000 Ethylmercurichlorendimides.
A kind of 8. compound semiconductor metal contact electrode according to claim 1,2,3,5 or 6, it is characterised in that：
Its structure is Pd/Ti/Pd/Cu or Pd/Ti/Pd/Ag；
Its each thickness degree is followed successively by 50~100 Ethylmercurichlorendimides, 150~250 Ethylmercurichlorendimides, 400~500 Ethylmercurichlorendimides, 5000 Ethylmercurichlorendimides.
A kind of 9. compound semiconductor metal contact electrode according to claim 1,2,3,5 or 6, it is characterised in that：
Its structure is Pd/Ge/Ti/Pd/Cu or Pd/Ge/Ti/Pd/Ag；
Its each thickness degree be followed successively by 100~200 Ethylmercurichlorendimides, 1300~1600 Ethylmercurichlorendimides, 150~250 Ethylmercurichlorendimides, 400~500 Ethylmercurichlorendimides,
2000~5000 Ethylmercurichlorendimides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710266352.5A CN107403833A (en) | 2017-04-21 | 2017-04-21 | A kind of compound semiconductor metal contacts electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710266352.5A CN107403833A (en) | 2017-04-21 | 2017-04-21 | A kind of compound semiconductor metal contacts electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107403833A true CN107403833A (en) | 2017-11-28 |
Family
ID=60404333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710266352.5A Pending CN107403833A (en) | 2017-04-21 | 2017-04-21 | A kind of compound semiconductor metal contacts electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107403833A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108963008A (en) * | 2018-07-12 | 2018-12-07 | 中山大学 | A kind of chip preparation method of the GaAs substrate of low Temperature Ohmic Contacts |
| CN112885717A (en) * | 2021-01-15 | 2021-06-01 | 广州爱思威科技股份有限公司 | Metal electrode of semiconductor device, method for manufacturing the same, and use thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201232662A (en) * | 2010-12-17 | 2012-08-01 | Skyworks Solutions Inc | Methods for metal plating and related devices |
| CN103258809A (en) * | 2012-02-15 | 2013-08-21 | 稳懋半导体股份有限公司 | Copper metal connection line of three-five compound semiconductor assembly |
| CN106133887A (en) * | 2014-03-27 | 2016-11-16 | 三菱电机株式会社 | Semiconductor device, the manufacture method of semiconductor device |
-
2017
- 2017-04-21 CN CN201710266352.5A patent/CN107403833A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201232662A (en) * | 2010-12-17 | 2012-08-01 | Skyworks Solutions Inc | Methods for metal plating and related devices |
| CN103258809A (en) * | 2012-02-15 | 2013-08-21 | 稳懋半导体股份有限公司 | Copper metal connection line of three-five compound semiconductor assembly |
| CN106133887A (en) * | 2014-03-27 | 2016-11-16 | 三菱电机株式会社 | Semiconductor device, the manufacture method of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108963008A (en) * | 2018-07-12 | 2018-12-07 | 中山大学 | A kind of chip preparation method of the GaAs substrate of low Temperature Ohmic Contacts |
| CN112885717A (en) * | 2021-01-15 | 2021-06-01 | 广州爱思威科技股份有限公司 | Metal electrode of semiconductor device, method for manufacturing the same, and use thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8722487B2 (en) | Semiconductor device with an electrode including an aluminum-silicon film | |
| US20070145582A1 (en) | Vertical Power Semiconductor Component, Semiconductor Device And Methods For The Production Thereof | |
| CN107533984A (en) | The manufacture method of semiconductor device and semiconductor device | |
| JP2009081177A (en) | Field-effect transistor, semiconductor chip, and semiconductor device | |
| US8466555B2 (en) | Gold-free ohmic contacts | |
| CN105977250A (en) | Semiconductor device | |
| US6670687B2 (en) | Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same | |
| US8937317B2 (en) | Method and system for co-packaging gallium nitride electronics | |
| US8735904B2 (en) | Semiconductor device | |
| CN107403833A (en) | A kind of compound semiconductor metal contacts electrode | |
| JP2010098195A (en) | Wiring structure and method for fabricating the same | |
| US20030111739A1 (en) | Semiconductor device and package thereof | |
| DE102013226334B4 (en) | Circuit carrier with a sintered semiconductor device | |
| US7952188B2 (en) | Semiconductor module with a dielectric layer including a fluorocarbon compound on a chip | |
| CN104617142B (en) | Semiconductor devices and the method for producing it | |
| US20200083367A1 (en) | Semiconductor device | |
| KR100849737B1 (en) | Light emitting diode device and manufacturing method thereof | |
| CN102361035A (en) | Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer | |
| US20230047789A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| DE102018121208B4 (en) | Diamond-based heat distribution substrates for integrated circuit dies | |
| CN1207760C (en) | Method of forming conductive coating on semiconductor device | |
| CN109994543A (en) | Semiconductor device | |
| GB2535484B (en) | Wafer metallization of high power semiconductor devices | |
| US11769715B2 (en) | Semiconductor device | |
| JP7410822B2 (en) | Semiconductor power module and method for manufacturing semiconductor power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171128 |