CN107403712B - A kind of plasma apparatus - Google Patents
A kind of plasma apparatus Download PDFInfo
- Publication number
- CN107403712B CN107403712B CN201710615454.3A CN201710615454A CN107403712B CN 107403712 B CN107403712 B CN 107403712B CN 201710615454 A CN201710615454 A CN 201710615454A CN 107403712 B CN107403712 B CN 107403712B
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- Prior art keywords
- electrode layer
- plasma
- plasma apparatus
- reaction chamber
- source
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of plasma apparatus, including shell, the inside of shell is reaction chamber, the top or lower part of reaction chamber are equipped with the plasma source for being used to carry out material deposition or material etch removal, plasma source is connected with external power source, the lower part or top of reaction chamber are equipped with the workbench for placing workpiece, the inside of workbench is equipped with Temperature-controlled appliance, reaction chamber inside circumference is equipped with an electrode layer, electrode layer and shell insulate, and external power source, Temperature-controlled appliance and electrode layer are electrically connected with a control system.Plasma apparatus disclosed by the invention can enhance the performance of film layer made of particle deposition or enhance the etching performance of particle.
Description
Technical field
It the present invention relates to the use of the technical field that plasma is deposited or etched, more particularly to a kind of plasma
Equipment.
Background technique
Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition,
Abbreviation PECVD) it is to make the gas containing film composed atom by microwave or radio frequency etc., it is being partially formed plasma, and wait
Gas ions chemical activity is very strong, it is easy to react, can go out desired film in deposition on substrate.
Reactive ion etching (Reactive Ions Etch, abbreviation RIE) is made by microwave or radio frequency etc. containing etching
The gas of particle is being partially formed plasma, and plasma chemistry activity is very strong, it is easy to it reacts, it is final to etch
Fall the material on partial substrate.
Conventional plasma apparatus, generally by the indoor pressure of control reaction chamber, gas componant, temperature, etc. from
Daughter source power and time control the thickness and uniformity of the film layer deposited on workpiece or the substrate etched away, and in work
In skill step, then there is this five variables of pressure, gas componant, temperature, plasma source power and time.Due to plasma
The characteristic of itself is not easily controlled in reaction chamber, so that the growth quality of film layer is difficult to control, and the density of film layer and one
Cause property and the uniformity of the substrate etched away are relatively low.Seriously restrict the application of plasma apparatus.
Summary of the invention
The object of the present invention is to provide a kind of plasma apparatus to be made with solving the above-mentioned problems of the prior art
Gas ions movement is more regular controllable, with enhancing film forming or etching effect.
To achieve the above object, the present invention provides following schemes:
The present invention provides a kind of plasma apparatus, including shell, the inside of the shell is reaction chamber, described anti-
The top or lower part for answering chamber are equipped with the plasma source for being used to carry out material deposition or material etch removal, the plasma
Body tied to source has external power source, and the lower part or top of the reaction chamber are equipped with the workbench for placing workpiece, the work
Make platform inside be equipped with Temperature-controlled appliance, the reaction chamber inside circumference be equipped with an electrode layer, the electrode layer with it is described
Shell insulation, the plasma source, the Temperature-controlled appliance and the electrode layer are electrically connected with a control system.
Preferably, the laser caliper sensors for detecting thicknesses of layers, the laser are equipped with inside the reaction chamber
Thickness measurement sensor is electrically connected with the control system, and the control system can join according to the detection of the laser caliper sensors
Number real-time control is applied to the voltage value of the electrode layer.
Preferably, the voltage of the electrode layer is -100VDC~+500VDC.
Preferably, the upper end of the electrode layer is not less than the lower plane of the plasma source, the lower end of the electrode layer
Not higher than the upper plane of the workbench, or, the upper end of the electrode layer is not less than the lower plane of the workbench, the electrode
The lower end of layer is not higher than the upper plane of the plasma source.
Preferably, the horizontal cross-section of the electrode layer is annulus, elliptical ring or polygon ring.
Preferably, the upper part of the housing is equipped with the first air inlet and the second air inlet for being connected to the reaction chamber, described
First air inlet is communicated with the first gas source, and second air inlet is communicated with the second gas source.
Preferably, the lower part of the housing is equipped with the bleeding point for being connected to the reaction chamber, and the bleeding point is communicated with vacuum
Pump, the vacuum pump are electrically connected to the control system.
Preferably, the external power source is microwave generator, radio-frequency signal generator or DC power supply.
Preferably, the workbench is connect with the radio-frequency signal generator or the DC power supply.
Preferably, the Temperature-controlled appliance is resistance heater, infrared heater or fluid heater.
The present invention achieves following technical effect compared with the existing technology: the present invention in reaction chamber by being arranged an electricity
Pole layer, and to application -100VDC~+500VDC voltage on electrode layer, make particle in the space that electrode layer surrounds out to matrix
It is deposited or is etched, the performance of film layer made of particle deposition can be enhanced or enhance the etching performance of plasma, increase base
The density and uniformity of film layer on body reduce color difference, or make that matrix is etched it is more uniform thoroughly, improve the matter of matrix
Amount.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structural schematic diagram of plasma apparatus of the present invention；
Wherein: 1- shell, 2- reaction chamber, 3- plasma source, 4- external power source, 5- workbench, 6- heating equipment,
7- electrode layer, the first air inlet of 8-, the second air inlet of 9-, the first gas source of 10-, the second gas source of 11-, 12- bleeding point, 13- vacuum
Pump, 14- control system, 15- laser caliper sensors.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of plasma apparatus to be made with solving the above-mentioned problems of the prior art
Gas ions movement is more regular controllable, with enhancing film forming or etching effect.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, present embodiments providing a kind of plasma apparatus, including shell 1, the inside of shell 1 is reaction
Chamber 2,1 top of shell are equipped with the first air inlet 8 and the second air inlet 9 of connection reaction chamber 2, and the first air inlet 8 is communicated with
First gas source 10, the second air inlet 9 are communicated with the second gas source 11, the first gas source 10 and the second gas source 11 for each leading into reaction
Gas.1 lower part of shell is equipped with the bleeding point 12 of connection reaction chamber 2, and bleeding point 12 is communicated with vacuum pump 13, vacuum pump 13 and control
System 14 processed is electrically connected.Vacuum pump 13 can under the control of control system 14 by the pressure control in reaction chamber 2 0.1~
1000Pa, preferably 1Pa.The top of reaction chamber 2 is equipped with plasma source 3, and plasma source 3 is connected with external power source 4,
External power source 4 is preferably radio-frequency signal generator, and radio-frequency signal generator can make the gas ionization being passed through by plasma source 3, is generated
Plasma.The lower part of reaction chamber 2 is equipped with the workbench 5 for placing workpiece, and workbench 5 is electrically connected with external power source 4,
The inside of workbench 5 is equipped with heating equipment 6, and heating equipment 6 is preferably resistance heater or fluid heater, and heating equipment 6 can
Temperature in reaction chamber 2 is controlled in 30 DEG C~1000 DEG C, preferably 60 DEG C.2 inside circumference of reaction chamber is equipped with electrode layer
7, electrode layer 7 and shell 1 insulate.The horizontal cross-section of electrode layer 7 is annulus, and the upper end of electrode layer 7 is not less than plasma source 3
Lower plane, the lower end of electrode layer 7 is not higher than the upper plane of workbench 5, to surround all particle and gas ion.Reaction chamber
The laser caliper sensors 15 for detecting thicknesses of layers, 14 electricity of laser caliper sensors 15 and control system are equipped with inside room 2
Connection, control system 14 can be applied to the electrode layer according to the detection parameters real-time control of the laser caliper sensors 15
The voltage of 7 voltage value, electrode layer 7 can be adjusted between -100VDC~+500VDC, preferably
+20VDC。
The working principle of the present embodiment are as follows:
Plasma is the 4th state except the existing way solid of substance, liquids and gases.Plasma itself contains
Electroneutral, the constrained edge effect of the relative amount of charged particle, on boundary is externally macroscopically presented in various charged particles
The electroneutral recombination rate of various particles；In addition a potential difference is presented to external ground in plasma, and the potential difference is by its boundary
Constrain the influence of bulk potential.Based on the above, plasma will be changed when plasma boundary obligatory point connects different potentials
In different charged particles recombination rate, to change in plasma the relative amount of different particles；Work as plasma boundary
When obligatory point connects different potentials, the sheaths current potential (Sheath Voltage) of plasma boundary obligatory point will be changed, from
And change the potential difference (Plasma Voltage) that external ground is presented in plasma.The external world of plasma boundary obligatory point
Current potential changes the self-characteristic of plasma, finally embodies in the process results carried out to utilized plasma, improves
The deposition or etching performance of plasma.
Traditional by this five Variable Control film forming procedures of pressure, gas componant, temperature, external power and time
On the basis of, embodiment adds this control variable of 7 voltage of electrode layer, the density and uniformity of depositional coating to improve
Etc. quality, or improve the uniformity of etachable material result and damaging.
It should be understood that the horizontal cross sectional geometry of electrode layer 7 is not limited to annulus, or straight-flanked ring, square loop,
Elliptical ring or triangular loop are subject to and match with the shape of shell 1.External power source 4 is not limited to radio-frequency signal generator, can also be
Microwave generator or DC power supply can be designed according to the structure of plasma source 3 and be selected.
Apply that a specific example illustrates the principle and implementation of the invention in this specification, above embodiments
Explanation be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art,
According to the thought of the present invention, there will be changes in the specific implementation manner and application range.In conclusion in this specification
Appearance should not be construed as limiting the invention.
Claims (9)
1. a kind of plasma apparatus, it is characterised in that: including shell, the inside of the shell is reaction chamber, the reaction
The top or lower part of chamber are equipped with the plasma source for being used to carry out material deposition or material etch removal, the plasma
Source is connected with external power source, and the lower part or top of the reaction chamber are equipped with the workbench for placing workpiece, the work
The inside of platform is equipped with Temperature-controlled appliance, and the reaction chamber inside circumference is equipped with an electrode layer, the electrode layer and the shell
Body insulation, the voltage of the electrode layer are -100VDC~+500VDC, the external power source, the Temperature-controlled appliance and institute
Electrode layer is stated to be electrically connected with a control system.
2. plasma apparatus according to claim 1, it is characterised in that: be equipped with inside the reaction chamber for detecting
The laser caliper sensors of thicknesses of layers, the laser caliper sensors are electrically connected with the control system, the control system
The voltage value of the electrode layer can be applied to according to the detection parameters real-time control of the laser caliper sensors.
3. plasma apparatus according to claim 1, it is characterised in that: the upper end of the electrode layer is not less than described etc.
The lower plane of plasma source, the lower end of the electrode layer is not higher than the upper plane of the workbench, or, the upper end of the electrode layer
Not less than the lower plane of the workbench, the lower end of the electrode layer is not higher than the upper plane of the plasma source.
4. plasma apparatus according to claim 1, it is characterised in that: the horizontal cross-section of the electrode layer be annulus,
Elliptical ring or polygon ring.
5. plasma apparatus according to claim 1, it is characterised in that: the upper part of the housing, which is equipped with, is connected to the reaction
The first air inlet and the second air inlet of chamber, first air inlet are communicated with the first gas source, the second air inlet connection
There is the second gas source.
6. plasma apparatus according to claim 1, it is characterised in that: the lower part of the housing, which is equipped with, is connected to the reaction
The bleeding point of chamber, the bleeding point are communicated with vacuum pump, and the vacuum pump is electrically connected to the control system.
7. plasma apparatus according to claim 1, it is characterised in that: the external power source be microwave generator,
Radio-frequency signal generator or DC power supply.
8. plasma apparatus according to claim 7, it is characterised in that: the workbench and external power source electricity
Connection.
9. plasma apparatus according to claim 1, it is characterised in that: the Temperature-controlled appliance is resistance heating
Device, infrared heater or fluid heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615454.3A CN107403712B (en) | 2017-07-26 | 2017-07-26 | A kind of plasma apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615454.3A CN107403712B (en) | 2017-07-26 | 2017-07-26 | A kind of plasma apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107403712A CN107403712A (en) | 2017-11-28 |
| CN107403712B true CN107403712B (en) | 2019-01-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710615454.3A Active CN107403712B (en) | 2017-07-26 | 2017-07-26 | A kind of plasma apparatus |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115799061B (en) * | 2023-01-09 | 2023-09-05 | 浙江大学杭州国际科创中心 | SiC wafer dicing sheet processing method and SiC wafer dicing sheet processing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100521103C (en) * | 2004-04-08 | 2009-07-29 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN103476196A (en) * | 2013-09-23 | 2013-12-25 | 中微半导体设备(上海)有限公司 | Plasma treatment device and plasma treatment method |
| CN106367736A (en) * | 2016-11-14 | 2017-02-01 | 张宇顺 | Far-end plasma reinforced chemical vapor deposition device |
| CN106498366A (en) * | 2015-09-03 | 2017-03-15 | 维易科仪器有限公司 | Multicell chemical gas-phase deposition system |
| CN106920726A (en) * | 2015-12-24 | 2017-07-04 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and its cleaning method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206204417U (en) * | 2016-11-14 | 2017-05-31 | 张宇顺 | Chemical vapor deposition unit |
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- 2017-07-26 CN CN201710615454.3A patent/CN107403712B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100521103C (en) * | 2004-04-08 | 2009-07-29 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN103476196A (en) * | 2013-09-23 | 2013-12-25 | 中微半导体设备(上海)有限公司 | Plasma treatment device and plasma treatment method |
| CN106498366A (en) * | 2015-09-03 | 2017-03-15 | 维易科仪器有限公司 | Multicell chemical gas-phase deposition system |
| CN106920726A (en) * | 2015-12-24 | 2017-07-04 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and its cleaning method |
| CN106367736A (en) * | 2016-11-14 | 2017-02-01 | 张宇顺 | Far-end plasma reinforced chemical vapor deposition device |
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| Publication number | Publication date |
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| CN107403712A (en) | 2017-11-28 |
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