CN107402050B - Pressure-resistant and freezing-resistant structure and method for piezoelectric ceramic wafer of ultrasonic sensor - Google Patents
Pressure-resistant and freezing-resistant structure and method for piezoelectric ceramic wafer of ultrasonic sensor Download PDFInfo
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- CN107402050B CN107402050B CN201710556499.8A CN201710556499A CN107402050B CN 107402050 B CN107402050 B CN 107402050B CN 201710556499 A CN201710556499 A CN 201710556499A CN 107402050 B CN107402050 B CN 107402050B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 146
- 238000007710 freezing Methods 0.000 title claims abstract description 31
- 230000008014 freezing Effects 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000006837 decompression Effects 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000006355 external stress Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims 18
- 230000001681 protective effect Effects 0.000 abstract description 36
- 238000005259 measurement Methods 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 238000005266 casting Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/66—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by measuring frequency, phase shift or propagation time of electromagnetic or other waves, e.g. using ultrasonic flowmeters
- G01F1/662—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F15/00—Details of, or accessories for, apparatus of groups G01F1/00 - G01F13/00 insofar as such details or appliances are not adapted to particular types of such apparatus
- G01F15/10—Preventing damage by freezing or excess pressure or insufficient pressure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
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- General Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to a pressure-resistant and freezing-resistant structure and a pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer, and belongs to the technical field of acoustics and sensors. The technical proposal is as follows: the sensor shell or the wafer protective sleeve is provided with a decompression structure (4), the decompression structure (4) changes the leveling form around the contact part of the sensor shell or the wafer protective sleeve and the piezoelectric ceramic wafer (2), releases the deformation stress of the sensor shell or the wafer protective sleeve, reduces the deformation of the contact part of the sensor shell or the wafer protective sleeve and the piezoelectric ceramic wafer (2), and protects the piezoelectric ceramic wafer (2) from being damaged. The invention has the beneficial effects that: the flow measuring device has the characteristics of simple and reasonable structure, high pressure resistance, strong anti-freezing performance, convenient disassembly and assembly and the like, is particularly suitable for being applied to flow measuring working conditions of a measured instrument which is subjected to freezing damage and is easy to occur when a measured medium in a pipeline is in a high pressure condition, and is particularly suitable for being used in anti-freezing water meter measurement.
Description
Technical Field
The invention relates to a pressure-resistant and freezing-resistant structure and a pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer, in particular to a special measuring sensor for a converter for measuring liquid flow or heat in a pipeline by utilizing an ultrasonic detection technology, which is suitable for measuring liquid flow and heat in a small pipe diameter, and belongs to the technical field of acoustics and sensors.
Background
At present, an ultrasonic transducer (also called a sensor) of an ultrasonic flowmeter, a calorimeter and an ultrasonic water meter for a pipeline mainly comprises a sensor shell, a wafer protecting sleeve and a piezoelectric ceramic wafer (the sensor shell and the wafer protecting sleeve are also integrated into a whole), and the ultrasonic sensor directly comprises the sensor shell and the piezoelectric ceramic wafer. Wherein the piezoelectric ceramic wafer is used for transmitting and receiving ultrasonic waves; the wafer protective sleeve is used for protecting the piezoelectric ceramic piece from being scratched and knocked in the use process; the sensor housing is a structural carrier of the entire ultrasonic sensor for connection to a pipe segment or other component. The ultrasonic sensor has the following problems in practical use: under the conditions of high pressure in the pipeline (or negative pressure in the pipeline) or medium icing in the pipeline, the deformation coefficient of the wafer protection sleeve or the sensor shell and the piezoelectric ceramic wafer is different, and the contact part of the wafer protection sleeve or the sensor shell and the piezoelectric ceramic wafer is deformed (tilted), so that the piezoelectric ceramic wafer is broken or a gap is formed between the piezoelectric ceramic wafer and the sensor shell, and the damage or the obvious reduction of the strength performance of the transmitted (received) signal of the ultrasonic sensor is caused, thereby influencing the normal measurement of the instrument.
Disclosure of Invention
The invention aims to provide a pressure-resistant and freezing-resistant structure and a pressure-resistant and freezing-resistant method for a piezoelectric ceramic wafer of an ultrasonic sensor, which can ensure that the piezoelectric ceramic wafer of the ultrasonic sensor is not damaged to influence normal measurement of an instrument when a medium in a pipeline is under high pressure or freezing and icing phenomenon occurs, and solve the problems in the background technology.
The technical scheme of the invention is as follows:
a pressure-resistant and freezing-resistant structure of an ultrasonic sensor piezoelectric ceramic wafer comprises a sensor shell and a piezoelectric ceramic wafer, wherein the piezoelectric ceramic wafer is arranged in the sensor shell; the method is characterized in that: the sensor shell is provided with a pressure reducing structure, the pressure reducing structure is positioned at the contact part of the sensor shell and the piezoelectric ceramic wafer and around the contact part, and the sensor shell and the pressure reducing structure form an integral structure.
The pressure reducing structure changes the leveling form around the contact part of the sensor shell and the piezoelectric ceramic wafer, releases the deformation stress of the sensor shell, reduces the deformation of the contact part of the sensor shell and the piezoelectric ceramic wafer, and protects the piezoelectric ceramic wafer from being damaged.
The number of the pressure reducing structures is one or more, and the pressure reducing structures can be arranged on the inner surface of the sensor shell, the outer surface of the sensor shell or both the inner surface and the outer surface of the sensor shell.
The piezoelectric ceramic wafer is stuck to the inner surface of the sensor shell; a snap ring or threads may also be used to secure to the inner surface of the sensor housing.
The pressure relief structure has a variety of structural configurations including:
1. boss decompression structure: a step boss is arranged around the contact part of the sensor shell and the piezoelectric ceramic wafer, and the outer diameter of the step boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer. The stepped boss may be provided on the inner surface of the sensor housing or on the outer surface of the sensor housing.
The boss decompression structure can be round, rectangular, elliptic and other shapes, but the cross section outline of the boss decompression structure is required to cover the cross section of the piezoelectric ceramic wafer.
2. Annular decompression structure: an annular groove is arranged around the contact part of the sensor shell and the piezoelectric ceramic wafer, and the inner diameter of the annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer. The annular groove may be provided on the inner surface of the sensor housing or on the outer surface of the sensor housing.
The cross section of the annular groove is arbitrary and comprises the shapes of rectangle, semicircle, triangle, trapezoid and the like; one annular groove may be provided, or a plurality of annular grooves may be provided.
The annular grooves may be continuously distributed around the entire sensor housing or may be intermittently distributed on the sensor housing.
The sensor shell can be formed by processing metal bars, can be formed by casting, forging and the like, and can also be formed by injection molding.
The pressure reducing structure can be integrated with the sensor shell into a whole; the pressure reducing structure and the sensor shell can be manufactured separately and respectively, and then the pressure reducing structure and the sensor shell are fixed together in a welding, riveting, threaded connection and other modes.
Because the pressure reducing structure is arranged on the sensor shell, the stress influence on the piezoelectric ceramic wafer caused by high pressure or freezing is effectively buffered, when the ultrasonic sensor is subjected to the high pressure or freezing, the sensor shell deforms at the pressure reducing structure to absorb external stress, the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is reduced, the piezoelectric ceramic wafer and the sensor shell are ensured to be firmly combined all the time, the ultrasonic sensor can not be influenced by the high pressure and the freezing, the ultrasonic sensor can always work stably, and the stable measurement of the instrument is ensured.
A pressure-resistant and freezing-resistant structure of an ultrasonic sensor piezoelectric ceramic wafer comprises a wafer protecting sleeve, a sensor shell and a piezoelectric ceramic wafer, wherein the piezoelectric ceramic wafer is arranged in the wafer protecting sleeve, and the wafer protecting sleeve is fixed on the sensor shell; the method is characterized in that: the wafer protecting sleeve is provided with a decompression structure, the decompression structure is positioned at the contact part of the wafer protecting sleeve and the piezoelectric ceramic wafer and around the contact part, and the wafer protecting sleeve and the decompression structure form an integral structure.
The pressure reducing structure changes the leveling form around the contact part of the wafer protecting sleeve and the piezoelectric ceramic wafer, releases the deformation stress of the sensor shell, reduces the deformation of the contact part of the wafer protecting sleeve and the piezoelectric ceramic wafer, and protects the piezoelectric ceramic wafer from being damaged.
The number of the pressure reducing structures is one or more, and the pressure reducing structures can be arranged on the inner surface of the wafer protective sleeve, the outer surface of the wafer protective sleeve or both the inner surface and the outer surface of the wafer protective sleeve.
The piezoelectric ceramic wafer is stuck on the inner surface of the wafer protective sleeve; a snap ring or threads may also be used to secure the inner surface of the wafer protective sheath.
The pressure relief structure has a variety of structural configurations including:
1. boss decompression structure: and a step boss is arranged around the contact part of the wafer protective sleeve and the piezoelectric ceramic wafer, and the outer diameter of the step boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer. The stepped boss may be provided on the inner surface of the wafer protective sleeve or on the outer surface of the wafer protective sleeve.
The boss decompression structure can be round, rectangular, elliptic and other shapes, but the cross section outline of the boss decompression structure is required to cover the cross section of the piezoelectric ceramic wafer.
The wafer protective sleeve can be formed by processing metal bars, can be formed by casting, forging and the like, and can also be formed by injection molding.
2. Annular decompression structure: an annular groove is arranged around the contact part of the wafer protective sleeve and the piezoelectric ceramic wafer, and the inner diameter of the annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer. The annular groove can be arranged on the inner surface of the wafer protecting sleeve or the outer surface of the wafer protecting sleeve.
The cross section of the annular groove is arbitrary and comprises the shapes of rectangle, semicircle, triangle, trapezoid and the like; one annular groove may be provided, or a plurality of annular grooves may be provided.
The annular grooves can be distributed continuously around the whole wafer protection sleeve or intermittently on the wafer protection sleeve.
The pressure reducing structure can be integrated with the wafer protective sleeve into a whole; or a split structure, the decompression structure and the wafer protection sleeve are manufactured separately, and then the decompression structure and the wafer protection sleeve are fixed together by welding, riveting, threaded connection and the like.
A pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer comprises the following steps:
when an ultrasonic sensor of an ultrasonic flowmeter for a pipeline, a calorimeter and an ultrasonic water meter is installed, a piezoelectric ceramic wafer is arranged in a sensor shell, a pressure reducing structure is arranged on the sensor shell, the pressure reducing structure is positioned at the contact part of the sensor shell and the piezoelectric ceramic wafer and around the contact part, and the sensor shell and the pressure reducing structure form an integral structure; the pressure reducing structure surrounds the periphery of the contact part of the sensor shell and the piezoelectric ceramic wafer to form protection for the piezoelectric ceramic wafer; in the use process of the ultrasonic flow, the calorimeter and the ultrasonic water meter on the pipeline, when the pressure in the pipeline changes or is generated, the pressure reducing structure of the sensor shell is deformed to absorb external stress at first, so that the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is avoided or reduced, the piezoelectric ceramic wafer and the sensor shell are ensured to be firmly combined all the time, the ultrasonic sensor is not influenced by the pressure change and the freezing of the pipeline, and the ultrasonic sensor works stably all the time, and the stable measurement of the instrument is ensured.
A pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer comprises the following steps:
when an ultrasonic sensor of an ultrasonic flowmeter, a calorimeter and an ultrasonic water meter for a pipeline is installed, a piezoelectric ceramic wafer is arranged in a wafer protecting sleeve, and the wafer protecting sleeve is fixed on a sensor shell; the wafer protection sleeve is provided with a decompression structure, the decompression structure is positioned at the contact part of the wafer protection sleeve and the piezoelectric ceramic wafer and around the contact part, and the wafer protection sleeve and the decompression structure form an integral structure; the pressure reducing structure surrounds the periphery of the contact part of the wafer protecting sleeve and the piezoelectric ceramic wafer to form the protection of the piezoelectric ceramic wafer; in the use process of the ultrasonic flow, the calorimeter and the ultrasonic water meter on the pipeline, when the pressure in the pipeline changes or is generated, the pressure reducing structure of the wafer protective sleeve is deformed to absorb external stress at first, so that the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is avoided or reduced, the piezoelectric ceramic wafer and the wafer protective sleeve are ensured to be firmly combined all the time, the ultrasonic sensor is not influenced by the pressure change and the freezing of the pipeline, and the ultrasonic sensor always works stably, and the stable measurement of the instrument is ensured.
The invention has the beneficial effects that: the ultrasonic sensor has the characteristics of simple and reasonable structure, high pressure resistance, strong freezing resistance, convenient disassembly and assembly and the like, is particularly suitable for being applied to flow measurement working conditions of a measured instrument which is subjected to freezing damage and is easy to occur when a measured medium in a pipeline is in a high pressure condition, can be widely applied to special ultrasonic sensors of ultrasonic flow, a calorimeter and an ultrasonic water meter, and is particularly suitable for the measurement of the freezing-proof water meter.
Drawings
FIG. 1 is a diagram of a background art structure;
FIG. 2 is a schematic diagram of the structure of the present embodiment; (outer boss is arranged on the sensor housing)
FIG. 3 is a schematic diagram of a second embodiment; (inner boss is arranged on the sensor housing)
FIG. 4 is a schematic view of a third structure of the present embodiment; (inner and outer convex tables are arranged on the sensor housing)
Fig. 5 is a schematic diagram of a fourth structure of the present embodiment; (pressure reducing ring is arranged on the sensor housing)
FIG. 6 is a schematic view of a fifth structure of the present embodiment; (the sensor shell is provided with a combination of a decompression ring and a boss)
Fig. 7 is a schematic view of a sixth structure of the present embodiment; (A horizontally arranged pressure reducing ring is arranged on the sensor shell)
Fig. 8 is a schematic diagram of a seventh configuration of the present embodiment; (A screw-shaped pressure-reducing ring is provided on the sensor housing)
Fig. 9 is a schematic view of the eighth structure of the present embodiment; (intermittent distribution pressure reducing rings on sensor housing)
Fig. 10 is a schematic diagram of a ninth structure of the present embodiment; (pressure-reducing Structure and sensor housing Split Structure)
Fig. 11 is a schematic view of a tenth structure of the present embodiment; (outer boss is arranged on the wafer protective sheath)
Fig. 12 is a schematic view of an eleventh structure of the present embodiment; (setting a pressure reducing ring on the wafer protective sheath)
Fig. 13 is a schematic view showing a twelve structures of the present embodiment; (the wafer protective sleeve is provided with a combination of a decompression ring and a boss)
In the figure: sensor housing 1, piezoceramics wafer 2, wafer protective sheath 3, decompression structure 4, welded connection 5.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings.
A pressure-resistant and freezing-resistant structure of an ultrasonic sensor piezoelectric ceramic wafer comprises a sensor shell 1 and a piezoelectric ceramic wafer 2, wherein the piezoelectric ceramic wafer 2 is arranged in the sensor shell 1; the method is characterized in that: the sensor housing 1 is provided with a pressure reducing structure 4, the pressure reducing structure 4 is positioned at and around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, and the sensor housing 1 and the pressure reducing structure 4 form an integral structure.
The pressure reducing structure 4 changes the leveling form around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, releases the deformation stress of the sensor housing 1, reduces the deformation of the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, and protects the piezoelectric ceramic wafer 2 from being damaged.
The number of the pressure reducing structures 4 is more than one, and the pressure reducing structures can be arranged on the inner surface of the sensor housing 1, can be arranged on the outer surface of the sensor housing 1, or are arranged on the inner surface and the outer surface of the sensor housing 1.
The pressure reducing structure 4 can be integrated with the sensor housing 1, and can be fixed together by welding, riveting, threaded connection and the like.
Referring to fig. 2, a pressure reducing structure 4 is a boss pressure reducing structure, and a stepped circular boss is arranged around a contact part of a sensor housing 1 and a piezoelectric ceramic wafer 2, wherein the outer diameter of the stepped circular boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the stepped round boss is arranged on the inner surface of the sensor housing 1.
When the medium in the pipeline is frozen or the pressure is higher, the stress of the sensor housing 1 is released through the boss decompression structure due to the boss decompression structure, so that the contact part of the sensor housing 1 in the boss decompression structure and the piezoelectric ceramic wafer 2 is prevented from deforming (or deformation is small), the contact between the piezoelectric ceramic wafer and the sensor housing 1 is prevented from being influenced, and the piezoelectric ceramic wafer 2 is prevented from being damaged.
In the second embodiment, referring to fig. 3, the pressure reducing structure 4 is a boss pressure reducing structure, and a stepped circular boss is arranged around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, and the outer diameter of the stepped circular boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the echelonment circle boss sets up at the internal surface of sensor housing 1, and piezoceramics wafer 2 sets up at the surface of echelonment circle boss.
In the third embodiment, referring to fig. 4, the pressure reducing structure 4 is a boss pressure reducing structure, two stepped circular bosses are arranged around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, and the outer diameters of the two stepped circular bosses are larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the first stepped round boss is arranged on the outer surface of the sensor housing 1, and the second stepped round boss is arranged on the inner surface of the sensor housing 1. The piezoelectric ceramic wafer 2 is arranged on the surface of the second stepped circular boss.
The piezoelectric ceramic wafer 2 is doubly protected by two stepped circular bosses.
In the fourth embodiment, referring to fig. 5, the pressure reducing structure 4 is an annular pressure reducing structure, and an annular groove is arranged around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, wherein the inner diameter of the annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the annular groove is arranged on the outer surface of the sensor housing 1, the cross section of the annular groove is rectangular, an annular groove is arranged, and the annular groove is continuously distributed around the whole sensor housing 1.
When the medium in the pipeline is frozen or the pressure is higher, the stress of the sensor housing 1 is released through the annular groove, so that the contact part of the sensor housing 1 in the annular groove and the piezoelectric ceramic wafer 2 is protected from deformation (or deformation is small), the contact between the piezoelectric ceramic wafer and the sensor housing 1 is not influenced, and the piezoelectric ceramic wafer 2 is protected from being damaged.
In the fifth embodiment, referring to fig. 6, there are two pressure reducing structures 4, and the two pressure reducing structures perform double protection on the piezoelectric ceramic wafer 2.
The pressure reducing structure 4 is an annular pressure reducing structure, annular grooves are formed in the periphery of the contact part of the sensor shell 1 and the piezoelectric ceramic wafer 2, and the inner diameter of each annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the annular groove is arranged on the outer surface of the sensor housing 1, the cross section of the annular groove is semicircular, and an annular groove is arranged and is continuously distributed around the whole sensor housing 1.
The other decompression structure 4 is a boss decompression structure, a stepped round boss is arranged around the contact part of the sensor shell 1 and the piezoelectric ceramic wafer 2, and the outer diameter of the stepped round boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the echelonment circle boss sets up at the internal surface of sensor housing 1, and piezoceramics wafer 2 sets up at the surface of echelonment circle boss.
In the sixth embodiment, referring to fig. 7, there are two pressure reducing structures 4, and the two pressure reducing structures 4 perform double protection on the piezoelectric ceramic wafer 2.
The pressure reducing structure 4 is an annular pressure reducing structure, annular grooves are formed in the periphery of the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, the inner diameter of each annular groove is larger than the outer diameter of the piezoelectric ceramic wafer 2, and the outer diameter is the same as the outer diameter of the sensor housing 1; the annular groove is provided on the outer surface of the sensor housing 1, and is an annular groove recessed in the outer surface of the sensor housing 1.
The other decompression structure 4 is a boss decompression structure, a stepped round boss is arranged around the contact part of the sensor shell 1 and the piezoelectric ceramic wafer 2, and the outer diameter of the stepped round boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2 but smaller than the outer diameter of an annular groove of the annular decompression structure; the echelonment circle boss sets up at the internal surface of sensor housing 1, and piezoceramics wafer 2 sets up at the surface of echelonment circle boss.
In a seventh embodiment, referring to fig. 8, the pressure reducing structure 4 is an annular pressure reducing structure, and annular threads are arranged around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, wherein the inner diameter of the annular threads is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the annular threads are provided on the outer surface of the sensor housing 1, and are continuously distributed around the entire sensor housing 1.
In the eighth embodiment, referring to fig. 9, the pressure reducing structure 4 is an intermittent annular pressure reducing structure, intermittent grooves are arranged around the contact part of the sensor housing 1 and the piezoelectric ceramic wafer 2, the grooves are intermittently distributed around the whole sensor housing 1, and the inner diameter of each intermittent groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2.
In the ninth embodiment, referring to fig. 10, a boss decompression structure of a decompression structure 4 is a split structure with a sensor housing 1, and the two are fixed together by a welding connection 5.
The pressure-resistant and freezing-resistant structure of the piezoelectric ceramic wafer of the ultrasonic sensor comprises a wafer protecting sleeve 3, a sensor shell 1 and a piezoelectric ceramic wafer 2, wherein the piezoelectric ceramic wafer 2 is arranged in the wafer protecting sleeve 3, and the wafer protecting sleeve 3 is fixed on the sensor shell 1; the method is characterized in that: the wafer protecting sleeve 3 is provided with a pressure reducing structure 4, the pressure reducing structure 4 is positioned at the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2 and around the same, and the wafer protecting sleeve 3 and the pressure reducing structure 4 form an integral structure through welding connection 5.
The pressure reducing structure 4 changes the leveling form around the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2, releases the deformation stress of the sensor housing 1, reduces the deformation of the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2, and protects the piezoelectric ceramic wafer 2 from being damaged.
The number of the pressure reducing structures 4 is one or more, and the pressure reducing structures can be arranged on the inner surface of the wafer protective sleeve 3, the outer surface of the wafer protective sleeve 3 or both the inner surface and the outer surface of the wafer protective sleeve 3.
The piezoelectric ceramic wafer 2 is stuck on the inner surface of the wafer protective sleeve 3; a snap ring or screw thread may be used to secure the inner surface of the wafer protective sheath 3.
In the tenth embodiment, referring to fig. 11, the pressing structure 4 is a boss pressure reducing structure, and a stepped circular boss is arranged around the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2, and the outer diameter of the stepped circular boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the stepped circular boss is provided on the outer surface of the wafer protective sheath 3.
In an eleventh embodiment, referring to fig. 12, the pressure reducing structure 4 is an annular pressure reducing structure, and an annular groove is arranged around the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2, wherein the inner diameter of the annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2; the annular groove is arranged on the outer surface of the wafer protective sleeve 3, the cross section of the annular groove is rectangular, a circular annular groove is arranged, and the annular groove is continuously distributed around the whole wafer protective sleeve 3.
In the twelfth embodiment, referring to fig. 13, two pressure reducing structures 4 are provided, and the two pressure reducing structures 4 perform double protection on the piezoelectric ceramic wafer 2.
The pressure reducing structure 4 is an annular pressure reducing structure, annular grooves are formed in the periphery of the contact part of the wafer protecting sleeve 3 and the piezoelectric ceramic wafer 2, the inner diameter of each annular groove is larger than the outer diameter of the piezoelectric ceramic wafer 2, and the outer diameter is the same as the outer diameter of the wafer protecting sleeve 3; the annular groove is provided on the outer surface of the wafer protective sleeve 3, and is a recessed annular groove on the outer surface of the wafer protective sleeve 3.
The other decompression structure 4 is a boss decompression structure, a stepped round boss is arranged around the contact part of the wafer protective sleeve 3 and the piezoelectric ceramic wafer 2, and the outer diameter of the stepped round boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer 2 but smaller than the outer diameter of an annular groove of the annular decompression structure; the stepped circular boss is provided on the outer surface of the wafer protective sheath 3.
A pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer comprises the following steps:
when an ultrasonic sensor of an ultrasonic flowmeter for a pipeline, a calorimeter and an ultrasonic water meter is installed, a piezoelectric ceramic wafer is arranged in a sensor shell, a pressure reducing structure is arranged on the sensor shell, the pressure reducing structure is positioned at the contact part of the sensor shell and the piezoelectric ceramic wafer and around the contact part, and the sensor shell and the pressure reducing structure form an integral structure; the pressure reducing structure surrounds the periphery of the contact part of the sensor shell and the piezoelectric ceramic wafer to form protection for the piezoelectric ceramic wafer; in the use process of the ultrasonic flow, the calorimeter and the ultrasonic water meter on the pipeline, when the pressure in the pipeline changes or is generated, the pressure reducing structure of the sensor shell is deformed to absorb external stress at first, so that the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is avoided or reduced, the piezoelectric ceramic wafer and the sensor shell are ensured to be firmly combined all the time, the ultrasonic sensor is not influenced by the pressure change and the freezing of the pipeline, and the ultrasonic sensor works stably all the time, and the stable measurement of the instrument is ensured.
A pressure-resistant and freezing-resistant method for an ultrasonic sensor piezoelectric ceramic wafer comprises the following steps:
when an ultrasonic sensor of an ultrasonic flowmeter, a calorimeter and an ultrasonic water meter for a pipeline is installed, a piezoelectric ceramic wafer is arranged in a wafer protecting sleeve, and the wafer protecting sleeve is fixed on a sensor shell; the wafer protection sleeve is provided with a decompression structure, the decompression structure is positioned at the contact part of the wafer protection sleeve and the piezoelectric ceramic wafer and around the contact part, and the wafer protection sleeve and the decompression structure form an integral structure; the pressure reducing structure surrounds the periphery of the contact part of the wafer protecting sleeve and the piezoelectric ceramic wafer to form the protection of the piezoelectric ceramic wafer; in the use process of the ultrasonic flow, the calorimeter and the ultrasonic water meter on the pipeline, when the pressure in the pipeline changes or is generated, the pressure reducing structure of the wafer protective sleeve is deformed to absorb external stress at first, so that the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is avoided or reduced, the piezoelectric ceramic wafer and the wafer protective sleeve are ensured to be firmly combined all the time, the ultrasonic sensor is not influenced by the pressure change and the freezing of the pipeline, and the ultrasonic sensor always works stably, and the stable measurement of the instrument is ensured.
Claims (3)
1. A pressure-resistant and freezing-resistant structure of an ultrasonic sensor piezoelectric ceramic wafer comprises a sensor shell (1) and a piezoelectric ceramic wafer (2), wherein the piezoelectric ceramic wafer is arranged in the sensor shell; the method is characterized in that: the sensor shell is provided with a pressure reducing structure (4), the pressure reducing structure (4) is positioned at the contact part of the sensor shell and the piezoelectric ceramic wafer (2) and around the contact part, and the sensor shell and the pressure reducing structure (4) form an integral structure; the pressure reducing structure (4) changes the leveling form around the contact part of the sensor shell and the piezoelectric ceramic wafer (2); the number of the pressure reducing structures is two, and the piezoelectric ceramic wafers (2) are doubly protected by the two pressure reducing structures; the pressure reducing structure is an annular pressure reducing structure, annular grooves are formed in the periphery of the contact part of the sensor shell and the piezoelectric ceramic wafer (2), and the inner diameter of each annular groove is larger than or equal to the outer diameter of the piezoelectric ceramic wafer; the other decompression structure is a boss decompression structure, a step-shaped boss is arranged around the contact part of the sensor shell and the piezoelectric ceramic wafer, and the outer diameter of the step-shaped boss is larger than or equal to the outer diameter of the piezoelectric ceramic wafer.
2. The pressure-resistant and freeze-resistant structure of an ultrasonic sensor piezoelectric ceramic wafer according to claim 1, wherein: the pressure reducing structure and the sensor shell are integrated into a whole; or a split structure, the pressure reducing structure and the sensor housing are fixed together.
3. A pressure-resistant and freeze-resistant method for an ultrasonic sensor piezoelectric ceramic wafer, characterized by using the pressure-resistant and freeze-resistant structure defined in claim 1, comprising the steps of:
when an ultrasonic sensor of an ultrasonic flowmeter for a pipeline, a calorimeter and an ultrasonic water meter is installed, a piezoelectric ceramic wafer is arranged in a sensor shell, a pressure reducing structure is arranged on the sensor shell, the pressure reducing structure is positioned at the contact part of the sensor shell and the piezoelectric ceramic wafer and around the contact part, and the sensor shell and the pressure reducing structure form an integral structure; the two pressure reducing structures encircle the periphery of the contact part of the sensor shell and the piezoelectric ceramic wafer to form double protection on the piezoelectric ceramic wafer; in the use process of the ultrasonic flow, the calorimeter and the ultrasonic water meter on the pipeline, when the pressure in the pipeline changes or freezes, the pressure reducing structure of the sensor shell firstly deforms to absorb external stress, so that the deformation of the contact part of the piezoelectric ceramic wafer and the sensor shell is avoided or reduced, the piezoelectric ceramic wafer and the sensor shell are ensured to be firmly combined all the time, and the ultrasonic sensor cannot be influenced by the pressure change and the freezing of the pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710556499.8A CN107402050B (en) | 2017-07-10 | 2017-07-10 | Pressure-resistant and freezing-resistant structure and method for piezoelectric ceramic wafer of ultrasonic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710556499.8A CN107402050B (en) | 2017-07-10 | 2017-07-10 | Pressure-resistant and freezing-resistant structure and method for piezoelectric ceramic wafer of ultrasonic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107402050A CN107402050A (en) | 2017-11-28 |
| CN107402050B true CN107402050B (en) | 2024-01-12 |
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