CN107393821A - A kind of manufacture method of the miniature Surface Mount diode of highly reliable glassivation - Google Patents
A kind of manufacture method of the miniature Surface Mount diode of highly reliable glassivation Download PDFInfo
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- CN107393821A CN107393821A CN201710581797.2A CN201710581797A CN107393821A CN 107393821 A CN107393821 A CN 107393821A CN 201710581797 A CN201710581797 A CN 201710581797A CN 107393821 A CN107393821 A CN 107393821A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000007797 corrosion Effects 0.000 claims abstract description 67
- 238000005260 corrosion Methods 0.000 claims abstract description 67
- 239000002253 acid Substances 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 15
- 238000000465 moulding Methods 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000428 dust Substances 0.000 claims abstract description 11
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 239000011787 zinc oxide Substances 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 34
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 16
- 239000003518 caustics Substances 0.000 claims description 15
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 229960000583 acetic acid Drugs 0.000 claims description 12
- 239000012362 glacial acetic acid Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000012459 cleaning agent Substances 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000007710 freezing Methods 0.000 claims description 4
- 230000008014 freezing Effects 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 238000011068 loading method Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 18
- 229910001413 alkali metal ion Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 2
- 230000002779 inactivation Effects 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000047 product Substances 0.000 abstract 4
- 239000006227 byproduct Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000536 complexating effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A kind of manufacture method of highly reliable miniature Surface Mount diode of glassivation provided by the invention, preparation, electrode welding including tube core, processing encapsulation, chip separation forms orthogonal rake using positive blast cutting mode, greatly reduces the surface field of device, improves the stability of chip surface；Chip table damaging layer is removed using acid corrosion in chip corrosion process, etching process is removed in the heavy metal ion for being adhered to chip surface, thermal inactivation mode and alkali metal ion and in the technique of chip surface growth layer of silicon dioxide passivation protection layer; chip surface is cleaning of to greatest extent; reduce the influence of interface charge; make device that there is good reverse performance, lift the reliability of product；Main component is used to realize passivation and encapsulation effect of the glass dust to chip table by high-temperature molding for the passivation glass powder of zinc oxide, diboron trioxide, silica, electrode in product component is suitable with the thermal coefficient of expansion of chip and glass passivation layer, improves the resisting temperature impact capacity of product；Electrode slice and axial product are sintered by product using special solder, realize surface mount packages structure.
Description
Technical field
The present invention relates to a kind of manufacture method of the highly reliable miniature Surface Mount diode of glassivation.
Background technology
As semi-conductor discrete device is to miniaturization, Surface Mount trend development, market is to miniature highly reliable glassivation table
The increase of diode demand is pasted, many complete machine producers are now changing the design of circuit board, by traditional single sided board or dual platen
Multilayer circuit board is changed to, while is just gradually developed from human weld to automatic welding mode, current existing major part is axle
To device, it need on circuit boards be punched when being used, weld and could use, and for multilayer circuit board, punching
Mode can damage the circuit on circuit board, can not meet that user uses, and micro glass passivation Surface Mount diode has size
The features such as small, easy to install, reliability is high, there is higher market popularization value.
The content of the invention
In order to solve the above technical problems, the invention provides a kind of manufacture of the highly reliable miniature Surface Mount diode of glassivation
Method, tube core are used depth-diffusion process, work are bonded using Surface Welding at High Temperature between tube core and electrode using aluminium as solder, chip
Skill, the chip structure reduce surface field, while before glassivation encapsulation is carried out, using acid, caustic corrosion technique and passivation work
Skill is protected to chip table, then high temperature passivation encapsulated moulding is carried out using specific glass powder, after electrode slice and shaping
Axial product welded at high temperature by solder, realize the surface mount packages structure of product.
The present invention is achieved by the following technical programs.
A kind of manufacture method of highly reliable miniature Surface Mount diode of glassivation provided by the invention, include the system of tube core
Standby, electrode welding, processing encapsulation, its concrete technology method are：
A, prepared by tube core：
A-1, PN junction formed on monocrystalline silicon piece by deep diffusion, by electron beam evaporation in the P faces of PN junction and N faces
Prepare metal film layer；
A-2, the monocrystalline silicon piece blast shaping that will be coated with metal film layer is cut by blast；
A-3, corrosion cleaning carried out to the tube core of well cutting using cleaning agent, the tube core after etching is surpassed with acetone
Sound wave cleans, then carries out ultrasonic wave with alcohol and clean, and is then dehydrated, dries；
B, electrode welding：Electrode and metal lead wire are freezed into the contact conductor of an entirety by high-temperature vacuum sintering,
Contact conductor, tube core, contact conductor are vertically stacked in graphite jig successively again, then graphite jig is put into vacuum sintering furnace
Contact conductor and tube core are carried out to 600 DEG C~800 DEG C of Surface Welding at High Temperature to be bonded.
C, processing encapsulation：
C-1, using acid corrosion liquid acid corrosion 30~120s is carried out to the diode after freezing；
C-2, the diode after acid corrosion is put into caustic corrosion liquid and corrodes 60~180s of cleaning；
C-3, use alternately flushing 10 times of hot and cold deionized water；
C-4, using glass powder paste uniformly coat to form uniform spheroid in Diode facets, then 2~3h of low temperature moulding；
C-5, sintered after axial product is loaded onto into solder and electrode slice on lead using 300~400 DEG C of temperature；
C-6, excess lead excision.
The material of metal film layer is aluminium.
The acid corrosion liquid be by mass percentage analytically pure 65%~68% nitric acid, >=40% hydrofluoric acid,
95%~98% sulfuric acid, >=99.5% glacial acetic acid, >=99.5% phosphoric acid by volume 1.2：1：1：2：1 mixing is molten
Liquid.
The caustic corrosion liquid is 3%~6% potassium hydroxide solution, and its caustic corrosion temperature is 58~98 DEG C.
The passivating solution be by mass percentage >=30% hydrogen peroxide, >=85% phosphoric acid and ionized water by 2:2:5 is mixed
The mixed liquor of conjunction.
The predominant amount of the glass dust is silica, zinc oxide, diboron trioxide.
Heating rate 10~15 DEG C/min of the low temperature moulding, 45~65min of heating-up time, sintering temperature 600~680
DEG C, 5~40min of constant temperature time, rate of temperature fall≤5 DEG C/min.
The cleaning agent be by mass percentage 65%~68% nitric acid, >=40% hydrofluoric acid, 95%~98%
Sulfuric acid, >=99.5% glacial acetic acid by volume 8:2:2:5 mixed solution.
The beneficial effects of the present invention are：Chip separation forms orthogonal rake using positive blast cutting mode, greatly reduces
The surface field of device, improve the stability of chip surface；Chip table is removed using acid corrosion in chip corrosion process
Damaging layer, etching process, which remove, to be adhered in the heavy metal ion of chip surface, thermal inactivation mode and alkali metal ion and in core
The technique of piece superficial growth layer of silicon dioxide passivation protection layer, cleaning of chip surface to greatest extent, reduce interface electricity
The influence of lotus, make device that there is good reverse performance, lift the reliability of product；Main component is used as zinc oxide, three oxygen
Change two boron, the passivation glass powder of silica realizes passivation and encapsulation effect of the glass dust to chip table by high-temperature molding,
Electrode in product component is suitable with the thermal coefficient of expansion of chip and glass passivation layer, improves the thermal matching energy of product, together
When low temperature moulding technique is used in the forming process of product glass dust, heating, cooling speed is slower, can preferably discharge glass
Stress in passivation layer, device can work under -65~200 DEG C of temperature conditionss, have higher reliability；Product uses U
Type glassivation surface mount packages structure, reliability is high, and size is small, and Surface Mount structure is easier to install.
Embodiment
Be described further below technical scheme, but claimed scope be not limited to it is described.
Embodiment 1：
A, prepared by tube core：
A-1, PN junction formed on monocrystalline silicon piece by deep diffusion, by electron beam evaporation in the P faces of PN junction and N faces
Prepare metal film layer；
A-2, the monocrystalline silicon piece blast shaping that will be coated with metal film layer is cut by blast；
A-3, corrosion cleaning carried out to the tube core of well cutting using cleaning agent, the tube core after etching is surpassed with acetone
Sound wave cleans, then carries out ultrasonic wave with alcohol and clean, and is then dehydrated, dries；
B, electrode welding：Electrode and metal lead wire are freezed into the contact conductor of an entirety by high-temperature vacuum sintering,
Contact conductor, tube core, contact conductor are vertically stacked in graphite jig successively again, then graphite jig is put into vacuum sintering furnace
Contact conductor and tube core are carried out to 650 DEG C of Surface Welding at High Temperature to be bonded.
C, processing encapsulation：
C-1, using acid corrosion liquid to after freezing diode carry out acid corrosion:50s；Cleaned by acid corrosion, Neng Gouyou
Effect removes the mechanical damage layer and foreign ion of chip table.In order to avoid acid corrosion liquid is to the excessive corrosion of assembly material,
In the case of ensureing that chip table top etching cleaning performance is guaranteed, the acid corrosion time is advisable in 50s；
C-2, the diode after acid corrosion is put into caustic corrosion liquid and corrodes cleaning 100s, because the solder of assembly material is
Aluminium, aluminium can react with potassium hydroxide solution, and the caustic corrosion time can not be long, and etching time is advisable in 100s；
C-3, replaced using hot and cold deionized water and rinsed 10 times, can be effective by way of hot and cold water alternately cleans
Remove the alkali metal ion on component；
C-4, using glass powder paste uniformly coat to form uniform spheroid in Diode facets, then low temperature moulding 2.4h；
C-5, sintered after axial product is loaded onto into solder and electrode slice on lead using 320 DEG C of temperature；In welding procedure
Middle to use gold germanium solder, because the material of metal film layer be aluminium, the fusing point of aluminium is 660.4 DEG C, at the same glass passivation layer into
Type temperature does not interfere with the shape of electrode using 320 DEG C of sintering temperature more than 600 DEG C, and also glass passivation layer will not be produced
It is raw to influence, while and can enough welds electrode and lead.
C-6, excess lead excision.
Because the firing temperature of product contact conductor is more than 800 DEG C, and glass dust shaping temperature between 640 DEG C,
Therefore 600 DEG C are cannot be below simultaneously not above 800 DEG C as the solder temperature between tube core and contact conductor, metal film layer
Material be aluminium, the fusing point of aluminium is 660.4 DEG C, can effectively take into account the sintering process of contact conductor and the shaping work of glass dust
Skill.
The acid corrosion liquid be by mass percentage analytically pure 66% nitric acid, 45% hydrofluoric acid, 97% sulfuric acid,
99.5% glacial acetic acid, 99.5% phosphoric acid by volume 1.2:1:1:2：1 mixed solution.Because product belongs to micro glass
Device is passivated, corrosion rate of the corrosive liquid to component is must take into consideration when carrying out corrosion cleaning, to wherein nitric acid and hydrofluoric acid pair
Silica has complexing, and silicon constantly dissolves in the presence of oxidation and complexing, and 1.2:1 nitric acid and the ratio of hydrofluoric acid
The corrosion rate of silicon can be made in 70 μm/min or so to be buffer by glacial acetic acid, the corrosion rate of silicon is left for 50 μm/min
The right side, when the ratio of sulfuric acid and nitric acid is 1:The corrosion rate of silicon does not have significant change when 1, but addition sulfuric acid can suppress to corrode very well
Liquid avoids copper lead by excessive corrosion to the corrosiveness of copper lead, but sulfuric acid belongs to strong acid, and sulfuric acid amount, which adds, can excessively make
There is oxidative phenomena in chip table, is used as buffer by adding phosphoric acid, the corrosion rate of mixed acid is more preferably controlled, with nitric acid
For oxidant, hydrofluoric acid is complexing agent, and sulfuric acid is corrosion inhibiter, and phosphoric acid is buffer, and glacial acetic acid is buffer.
The caustic corrosion liquid is 4% potassium hydroxide solution, and its caustic corrosion temperature is 65 DEG C.Potassium hydroxide can go to deacidify
The damage of silicon chip in corrosion.The dye layer of acid corrosion formation is removed simultaneously, is reduced influence of the interfacial effect to device, is formed more clear
Clean, smooth table top moulding, make device that there is more stable reverse performance.
The passivating solution is 35% hydrogen peroxide, 87% phosphoric acid and ionized water by mass percentage by 2:2:5 mixing
Mixed liquor.Reduced using phosphoric acid and finish probability existing for the oxide and alkali metal ion on surface, while one layer of dioxy can be produced
SiClx passivation layer, so as to reduce leakage current.
The predominant amount of the glass dust is silica, zinc oxide, diboron trioxide, its coefficient of expansion and electrode phase
Closely, the thermal matching energy of product is improved.
The heating rate 12 DEG C/min of the low temperature moulding, heating-up time 50min, 630 DEG C of sintering temperature, constant temperature time
10min, 4 DEG C/min of rate of temperature fall.
The cleaning agent be by mass percentage 66% nitric acid, 50% hydrofluoric acid, 96% sulfuric acid, 99.5% ice
Acetic acid by volume 8:2:2:5 mixed solution.
Embodiment 2：
A, prepared by tube core：
A-1, PN junction formed on monocrystalline silicon piece by deep diffusion, by electron beam evaporation in the P faces of PN junction and N faces
Prepare metal film layer；
A-2, the monocrystalline silicon piece blast shaping that will be coated with metal film layer is cut by blast；
A-3, corrosion cleaning carried out to the tube core of well cutting using cleaning agent, the tube core after etching is surpassed with acetone
Sound wave cleans, then carries out ultrasonic wave with alcohol and clean, and is then dehydrated, dries；
B, electrode welding：Electrode and metal lead wire are freezed into the contact conductor of an entirety by high-temperature vacuum sintering,
Contact conductor, tube core, contact conductor are vertically stacked in graphite jig successively again, then graphite jig is put into vacuum sintering furnace
Contact conductor and tube core are carried out to 680 DEG C of Surface Welding at High Temperature to be bonded.
C, processing encapsulation：
C-1, using acid corrosion liquid acid corrosion 110s is carried out to the diode after freezing；Cleaned by acid corrosion, Neng Gouyou
Effect removes the mechanical damage layer and foreign ion of chip table.In order to avoid acid corrosion liquid is to the excessive corrosion of assembly material,
In the case of ensureing that chip table top etching cleaning performance is guaranteed, the acid corrosion time is advisable in 110s；
C-2, the diode after acid corrosion is put into caustic corrosion liquid and corrodes cleaning 150s, because the solder of assembly material is
Aluminium, aluminium can react with potassium hydroxide solution, and the caustic corrosion time can not be long, and etching time is advisable in 150s；
C-3, replaced using hot and cold deionized water and rinsed 10 times, can be effective by way of hot and cold water alternately cleans
Remove the alkali metal ion on component；
C-4, using glass powder paste uniformly coat to form uniform spheroid in Diode facets, then low temperature moulding 2.8h；
C-5, sintered after axial product is loaded onto into solder and electrode slice on lead using 380 DEG C of temperature；In welding procedure
Middle to use gold germanium solder, because the material of metal film layer be aluminium, the fusing point of aluminium is 660.4 DEG C, at the same glass passivation layer into
Type temperature does not interfere with the shape of electrode using 380 DEG C of sintering temperature more than 600 DEG C, and also glass passivation layer will not be produced
It is raw to influence, while and can enough welds electrode and lead.
C-6, excess lead excision.
Because the firing temperature of product contact conductor is more than 800 DEG C, and glass dust shaping temperature between 675 DEG C,
Therefore 600 DEG C are cannot be below simultaneously not above 800 DEG C as the solder temperature between tube core and contact conductor, metal film layer
Material be aluminium, the fusing point of aluminium is 660.4 DEG C, can effectively take into account the sintering process of contact conductor and the shaping work of glass dust
Skill.
The acid corrosion liquid be by mass percentage analytically pure 67.5% nitric acid, >=40% hydrofluoric acid, 97.8%
Sulfuric acid, 99.5% glacial acetic acid, 99.5% phosphoric acid by volume 1.2:1:1:2：1 mixed solution.Because product belongs to
Micro glass is passivated device, and corrosion rate of the corrosive liquid to component is must take into consideration when carrying out corrosion cleaning, to wherein nitric acid and
Hydrofluoric acid has complexing to silica, and silicon constantly dissolves in the presence of oxidation and complexing, and 1.2:1 nitric acid and hydrogen fluorine
The ratio of acid can make the corrosion rate of silicon in 70 μm/min or so be buffer by glacial acetic acid, and the corrosion rate of silicon is 50
μm/min or so, when the ratio of sulfuric acid and nitric acid is 1:The corrosion rate of silicon does not have significant change when 1, but adds sulfuric acid energy very well
Suppress corrosiveness of the corrosive liquid to copper lead, avoid copper lead by excessive corrosion, but sulfuric acid belongs to strong acid, and sulfuric acid amount adds
It can excessively chip table oxidative phenomena is occurred, be used as buffer by adding phosphoric acid, more preferably control the corrosion speed of mixed acid
Rate, using nitric acid as oxidant, hydrofluoric acid is complexing agent, and sulfuric acid is corrosion inhibiter, and phosphoric acid is buffer, and glacial acetic acid is buffer.
The caustic corrosion liquid is 5.5% potassium hydroxide solution, and its caustic corrosion temperature is 90 DEG C.Potassium hydroxide can remove
The damage of silicon chip in acid corrosion.The dye layer of acid corrosion formation is removed simultaneously, is reduced influence of the interfacial effect to device, is formed more
Cleaning, smooth table top moulding, make device have more stable reverse performance.
The passivating solution is 50% hydrogen peroxide, 90% phosphoric acid and ionized water by mass percentage by 2:2:5 mixing
Mixed liquor.Reduced using phosphoric acid and finish probability existing for the oxide and alkali metal ion on surface, while one layer of dioxy can be produced
SiClx passivation layer, so as to reduce leakage current.
The predominant amount of the glass dust is silica, zinc oxide, diboron trioxide, its coefficient of expansion and electrode phase
Closely, the thermal matching energy of product is improved.
The heating rate 14.5 DEG C/min of the low temperature moulding, heating-up time 63.5min, 650 DEG C of sintering temperature, during constant temperature
Between 38min, 2 DEG C/min of rate of temperature fall.
The cleaning agent be by mass percentage 67.6% nitric acid, 46% hydrofluoric acid, 97.6% sulfuric acid, 99.5%
Glacial acetic acid by volume 8:2:2:5 mixed solution.
Claims (9)
1. a kind of manufacture method of the miniature Surface Mount diode of highly reliable glassivation, includes preparation, electrode welding, the processing of tube core
Encapsulation, its concrete technology method are：
A, prepared by tube core：
A-1, PN junction formed on monocrystalline silicon piece by deep diffusion, prepared by electron beam evaporation in the P faces of PN junction and N faces
Metal film layer；
A-2, the monocrystalline silicon piece blast shaping that will be coated with metal film layer is cut by blast；
A-3, corrosion cleaning carried out to the tube core of well cutting using cleaning agent, the tube core after etching carries out ultrasonic wave with acetone
Cleaning, then carry out ultrasonic wave with alcohol and clean, then it is dehydrated, dries；
B, electrode welding：Electrode and metal lead wire are freezed into the contact conductor of an entirety, then electricity by high-temperature vacuum sintering
Pole lead, tube core, contact conductor are vertically stacked in graphite jig successively, then graphite jig is put into electricity in vacuum sintering furnace
Pole lead and tube core carry out 600 DEG C~800 DEG C of Surface Welding at High Temperature bonding.
C, processing encapsulation：
C-1, using acid corrosion liquid acid corrosion 30~120s is carried out to the diode after freezing；
C-2, the diode after acid corrosion is put into caustic corrosion liquid and corrodes 60~180s of cleaning；
C-3, use alternately flushing 10 times of hot and cold deionized water；
C-4, using glass powder paste uniformly coat to form uniform spheroid in Diode facets, then 2~3h of low temperature moulding；
C-5, sintered after loading onto solder and electrode slice on lead using 300~400 DEG C of temperature；
C-6, excess lead excision.
2. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：Metal
The material of film layer is aluminium.
3. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Acid corrosion liquid is analytically pure 65%~68% nitric acid, >=40% hydrofluoric acid, 95%~98% sulphur by mass percentage
Acid, >=99.5% glacial acetic acid, >=99.5% phosphoric acid by volume 1.2：1：1：2：2 mixed solution.
4. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Caustic corrosion liquid is 3%~6% potassium hydroxide solution, and its caustic corrosion temperature is 58~98 DEG C.
5. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Passivating solution be by mass percentage >=30% hydrogen peroxide, >=85% phosphoric acid and ionized water by 2:2:The mixed liquor of 5 mixing.
6. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
The predominant amount of glass dust is silica, zinc oxide, diboron trioxide.
7. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Heating rate 10~15 DEG C/min of low temperature moulding, 45~65min of heating-up time, 600~680 DEG C of sintering temperature, constant temperature time 5
~40min, rate of temperature fall≤5 DEG C/min.
8. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Cleaning agent be by mass percentage 65%~68% nitric acid, >=40% hydrofluoric acid, 95%~98% sulfuric acid, >=99.5%
Glacial acetic acid by volume 8:2:2:5 mixed solution.
9. the manufacture method of the highly reliable miniature Surface Mount diode of glassivation as claimed in claim 1, it is characterised in that：It is described
Solder is aluminium.
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| CN108155104A (en) * | 2017-12-27 | 2018-06-12 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages fast-recovery commutation silicon stack |
| CN108172514A (en) * | 2017-12-27 | 2018-06-15 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages transient voltage suppressor diode |
| CN108206219A (en) * | 2017-12-29 | 2018-06-26 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of highly reliable glassivation surface mount packages voltage adjustment diode and preparation method thereof |
| CN112570369A (en) * | 2020-11-23 | 2021-03-30 | 景苏鹏 | TO46 packaging process method |
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