CN107389215A - A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film - Google Patents

A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film Download PDF

Info

Publication number
CN107389215A
CN107389215A CN201710471198.5A CN201710471198A CN107389215A CN 107389215 A CN107389215 A CN 107389215A CN 201710471198 A CN201710471198 A CN 201710471198A CN 107389215 A CN107389215 A CN 107389215A
Authority
CN
China
Prior art keywords
superelevation
film
silicon chip
amorphous carbon
linearity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710471198.5A
Other languages
Chinese (zh)
Inventor
张琪
赵玉龙
马鑫
杨雷
王鹏
赵友
赵云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN201710471198.5A priority Critical patent/CN107389215A/en
Publication of CN107389215A publication Critical patent/CN107389215A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements

Abstract

A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film; silicon chip substrate including being coated with silicon nitride layer; silicon chip substrate surface is using ECR sputter equipments deposition superelevation linearity amorphous carbon-film; superelevation linearity amorphous carbon-film surface sputters the first gold electrode; silicon dioxide layer of protection is made in silicon chip substrate surface; silicon dioxide layer etching makes the first gold electrode exposed; silicon chip substrate is fixed on pcb board; the first gold electrode and the second gold electrode are connected using gold wire bonding, circuit is accessed eventually through fairlead；Preparation method of the present invention is simple, and consuming energy is low in preparation process, good in economic efficiency；It can be merged with MEMS technology, design MEMS multifunction integrated sensors；Mechanical performance is superior, has the good characteristic such as low-friction coefficient, corrosion-resistant, wear-resisting.

Description

A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film
Technical field
The present invention relates to temperature sensor chip technical field, more particularly to a kind of superelevation linearity based on amorphous carbon-film Temperature sensor chip.
Background technology
Temperature survey and human being's production life are closely bound up, and temperature sensor is also that with fastest developing speed, application is most wide A kind of sensor.Especially negative temperature coefficient (NTC) thermistor, have small small volume, thermal inertia, high sensitivity, stability it is good, The advantages that lossless, without hysteresis, has obtained the favor of all trades and professions using its temperature sensor as sensing element, is widely used in Electronic apparatus, automobile, the Industry Control even field such as Aero-Space, weapons ship.
Traditional NTC thermistor is usually the oxide or other by magnesium-yttrium-transition metals such as Mn, Fe, Co, Ni, Cu, Mg Compound, according to the difference of performance requirement, carry out different ratio mixing, the heat-sensitive semiconductive ceramic that shaping, sintering form.NTC The relation of thermistor resistance and temperature is non-linear serious, causes the interchangeability of thermistor temperature sensor poor.And traditional NTC Thermistor preparation technology is complicated, it is necessary to completes under the high temperature conditions, energy expenditure is larger.With the integrated difficulty of MEMS sensor Degree is big, for example can not be integrated on the same chip with MEMS pressure or acceleration transducer.Mechanical performance is not good enough, limit its Application under some adverse circumstances, reduce the life-span of sensor.
The content of the invention
The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide a kind of superelevation based on amorphous carbon-film Linearity temperature sensor chip, preparation method is simple, and consuming energy is low in preparation process, good in economic efficiency；Can be with MEMS works Skill merges, and designs MEMS multifunction integrated sensors；Mechanical performance is superior, has low-friction coefficient, corrosion-resistant, wear-resisting etc. excellent Characteristic.
To achieve these goals, the technical solution adopted by the present invention is：
A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film, including it is coated with the silicon chip substrate of silicon nitride layer 4, the surface of silicon chip substrate 4 is using ECR sputter equipments deposition superelevation linearity amorphous carbon-film 1, the surface of superelevation linearity amorphous carbon-film 1 The first gold electrode 2 is sputtered, silicon dioxide layer of protection 3 is made on the surface of silicon chip substrate 4, silicon dioxide layer etching makes the first gold electrode 2 is exposed, and silicon chip substrate 4 is fixed on pcb board 7, is bonded the first gold electrode 2 of connection and the second gold electrode 6 using spun gold 5, most Circuit is accessed by fairlead 8 eventually.
A kind of preparation method of the superelevation linearity temperature sensor chip based on amorphous carbon-film, comprises the following steps：
1) use the silicon chip substrate 4 for being coated with silicon nitride layer to be used as substrate, aluminium masking is made on silicon nitride layer；
2) silicon chip substrate 4 is put into acetone and ethanol in succession, ultrasonic wave, which cleans 5 minutes, to be dried；Then by silicon chip substrate 4 Be put into ECR plasma chamber bodies, fixed clamping carries out vacuum pumping in substrate frame, to cavity, make base pressure be less than 3 × 10-4Pa；
3) argon gas is passed through into chamber, and it is 4 × 10 to control partial pressure of ar gas-2Pa, open microwave power supply and magnetic coil, control The bias of silicon chip substrate 4 is 50eV~100eV, formation carbon source, sedimentation rate 8nm/min, and the superelevation linearity for obtaining 200nm is non- Brilliant carbon film 1；
4) erode aluminium using aluminium corrosive liquid to shelter, making electrode using photoresist shelters, and sputters the first gold electrode afterwards 2, peeled off using acetone；
5) silicon dioxide layer of protection 3 is made on the surface of silicon chip substrate 4 using pecvd process, dioxy is made using photoresist SiClx etching masking, carrying out the etching of silicon dioxide layer afterwards exposes the first gold electrode 2；
6) silicon chip substrate 4 is fixed on pcb board 7, the first gold electrode 2 of connection and the second gold electrode is bonded using spun gold 5 6。
The coefficient of friction of described superelevation linearity amorphous carbon-film 1 is 0.05, uses diamond penetrator, load 0.25N Wear test in, measure wear-out life up to 100,000 circle.
Beneficial effects of the present invention are：
Because present invention employs superelevation linearity amorphous carbon-film 1 so that temperature sensor has the characteristics that：1. superelevation The linearity, it is several after the resistance-temperature characteristics curve least square fitting of the sensing element of superelevation linearity amorphous carbon-film 1 of use It is straight line so that temperature sensor has the extraordinary linearity, it is possible to achieve the interchangeability of sensor；2. prepared Journey is low in energy consumption, and preparation technology is simple, high financial profit；3. can be merged with MEMS technology, the collection of MEMS Multifunction Sensors is realized Into；4. good mechanical property, because superelevation linearity amorphous carbon-film has the features such as low-friction coefficient, wear-resisting, introduce this resistance It can cause sensor that there is the longer life-span, the application being adapted under adverse circumstances.Therefore, the present invention has very big market efficiency And economic value.
Brief description of the drawings
Fig. 1 is the schematic elevation view of the present invention.
Fig. 2 is the schematic top plan view of the present invention.
Fig. 3 be argon gas work partial pressure be 4 × 10-2Pa, the bias of silicon chip substrate are the temperature biography under 50eV preparation parameters Sensor resistance-temperature characteristics curve map.
Fig. 4 is that argon gas work partial pressure is 4 × 10-2Pa, the bias of silicon chip substrate are the TEMP under 100eV preparation parameters The resistance-temperature characteristics curve map of device.
Embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Referring to Figures 1 and 2, a kind of superelevation linearity temperature sensor chip based on amorphous carbon-film, including it is coated with nitridation The silicon chip substrate 4 of silicon layer, silicon nitride layer are insulating barrier, prevent the semiconductor silicon of silicon chip substrate 4 and influence superelevation linearity amorphous carbon The resistivity of film 1；The surface of silicon chip substrate 4 deposits one layer of superelevation linearity amorphous carbon-film 1 using ECR sputter equipments, and thickness is 200nm；The surface of superelevation linearity amorphous carbon-film 1 sputters the first gold electrode 2, and silica protection is made on the surface of silicon chip substrate 4 Layer 3, to protect superelevation linearity amorphous carbon-film 1；Silicon dioxide layer etching makes the first gold electrode 2 exposed, and silicon chip substrate 4 is consolidated It is scheduled on pcb board 7 so as to circuit connection, connection the first gold electrode 2 and the second gold electrode 6 is bonded using spun gold 5, eventually through draws String holes 8 accesses circuit.
A kind of preparation method of the superelevation linearity temperature sensor chip based on amorphous carbon-film, comprises the following steps：
1) use the silicon chip substrate 4 for being coated with silicon nitride layer to be used as substrate, aluminium masking is made on silicon nitride layer；
2) silicon chip substrate 4 is put into acetone and ethanol in succession, ultrasonic wave, which cleans 5 minutes, to be dried；Then by silicon chip substrate 4 Be put into ECR plasma chamber bodies, fixed clamping carries out vacuum pumping in substrate frame, to cavity, make base pressure be less than 3 × 10-4Pa；
3) argon gas is passed through into chamber, and it is 4 × 10 to control partial pressure of ar gas-2Pa, open microwave power supply and magnetic coil, control The bias of silicon chip substrate 4 is 50eV~100eV, formation carbon source, sedimentation rate 8nm/min, and the superelevation linearity for obtaining 200nm is non- Brilliant carbon film 1；
4) erode aluminium using aluminium corrosive liquid to shelter, making electrode using photoresist shelters, and sputters the first gold electrode afterwards 2, peeled off using acetone；
5) silicon dioxide layer of protection 3 is made on the surface of silicon chip substrate 4 using pecvd process, dioxy is made using photoresist SiClx etching masking, carrying out the etching of silicon dioxide layer afterwards exposes the first gold electrode 2；
6) silicon chip substrate 4 is fixed on pcb board 7, the first gold electrode 2 of connection and the second gold electrode is bonded using spun gold 5 6。
The coefficient of friction of described superelevation linearity amorphous carbon-film 1 is 0.05, uses diamond penetrator, load 0.25N Wear test in, measure wear-out life up to 100,000 circle.
Temperature sensor is tested, its temperature fluctuation range is ± 0.3 DEG C, and humid test is in program operating mode Lower progress, and slop control has been carried out to temperature rising curve；Using desk-top universal meter, its resistance-temperature characteristics is obtained Curve, and fitting a straight line is carried out to it using least square method.
TCR can be obtained according to the definition of temperature-coefficient of electrical resistance：
R1For the resistance value under initial temperature, R2For the resistance value at a certain temperature, Δ T is temperature difference.
When the bias of silicon chip substrate 4 is 50eV, argon gas work partial pressure is 4 × 10-2Pa, obtained superelevation linearity amorphous For fixed carbon resister-temperature characteristics as shown in figure 3, temperature is increased to 155 DEG C from -75 DEG C, temperature-resistance when obtaining heating is bent Line, as shown in figure orbicular spot-line；To study the repeatability of the temperature-resistance characteristic of superelevation linearity amorphous carbon-film 1, temperature is from 155 DEG C -75 DEG C are dropped to, the temperature resistance curve to be cooled.It can be seen that the linearity of curve is very good, line is entered to curve Property fitting, the goodness of fit R-Sq of heating curve is 0.998, and the R-Sq of temperature lowering curve is 0.997；And two curves almost Overlap, illustrate repeatability very well, according to formula (1), obtain its TCR value as -824.85ppm/ DEG C.
When the bias of silicon chip substrate 4 is 75eV, argon gas work partial pressure is 4 × 10-2Pa, obtained superelevation linearity amorphous The resistance-temperature characteristics curve of carbon film 1 is similar with the resistance-temperature characteristics curve when the bias of silicon chip substrate 4 is 50eV, not There is obvious change.
When the bias of silicon chip substrate 4 is 100eV, argon gas work partial pressure is 4 × 10-2Pa, the obtained superelevation linearity are non- The brilliant resistance-temperature characteristics curve of carbon film 1 is as shown in figure 4, heat with the temperature resistance curve obtained in temperature-fall period at -75 DEG C There is the good linearity, it is 0.996 to obtain goodness of fit R-Sq, and repeatability is very well in the range of~65 DEG C.Pass through formula (1) TCR values, are calculated as -922.42ppm/ DEG C.

Claims (3)

  1. A kind of 1. superelevation linearity temperature sensor chip based on amorphous carbon-film, it is characterised in that：Including being coated with silicon nitride layer Silicon chip substrate (4), silicon chip substrate (4) surface using ECR sputter equipments deposition superelevation linearity amorphous carbon-film (1), superelevation line Property degree amorphous carbon-film (1) surface sputter the first gold electrode (2), silicon chip substrate (4) surface make silicon dioxide layer of protection (3), Silicon dioxide layer etching makes the first gold electrode (2) exposed, and silicon chip substrate (4) is fixed on pcb board (7), uses spun gold (5) key The first gold electrode of connection (2) and the second gold electrode (6) are closed, circuit is accessed eventually through fairlead (8).
  2. A kind of 2. preparation method of the superelevation linearity temperature sensor chip based on amorphous carbon-film, it is characterised in that including with Lower step：
    1) use the silicon chip substrate (4) for being coated with silicon nitride layer to be used as substrate, aluminium masking is made on silicon nitride layer；
    2) silicon chip substrate (4) is put into acetone and ethanol in succession, ultrasonic wave, which cleans 5 minutes, to be dried；Then by silicon chip substrate (4) Be put into ECR plasma chamber bodies, fixed clamping carries out vacuum pumping in substrate frame, to cavity, make base pressure be less than 3 × 10-4Pa；
    3) argon gas is passed through into chamber, and it is 4 × 10 to control partial pressure of ar gas-2Pa, microwave power supply and magnetic coil are opened, control silicon chip The bias of substrate (4) is 50eV~100eV, forms carbon source, sedimentation rate 8nm/min, obtains 200nm superelevation linearity amorphous Carbon film (1)；
    4) aluminium is eroded using aluminium corrosive liquid to shelter, making electrode using photoresist shelters, and sputters the first gold electrode (2) afterwards, Peeled off using acetone；
    5) silicon dioxide layer of protection (3) is made on silicon chip substrate (4) surface using pecvd process, dioxy is made using photoresist SiClx etching masking, carrying out the etching of silicon dioxide layer afterwards exposes the first gold electrode (2)；
    6) silicon chip substrate (4) is fixed on pcb board (7), the first gold electrode of connection (2) and the second gold medal is bonded using spun gold (5) Electrode (6).
  3. A kind of 3. preparation side of superelevation linearity temperature sensor chip based on amorphous carbon-film according to claim 2 Method, it is characterised in that the coefficient of friction of described superelevation linearity amorphous carbon-film 1 is 0.05, and using diamond penetrator, load is In 0.25N wear test, wear-out life is measured up to 100,000 circles.
CN201710471198.5A 2017-06-20 2017-06-20 A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film Pending CN107389215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710471198.5A CN107389215A (en) 2017-06-20 2017-06-20 A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710471198.5A CN107389215A (en) 2017-06-20 2017-06-20 A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film

Publications (1)

Publication Number Publication Date
CN107389215A true CN107389215A (en) 2017-11-24

Family

ID=60333522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710471198.5A Pending CN107389215A (en) 2017-06-20 2017-06-20 A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film

Country Status (1)

Country Link
CN (1) CN107389215A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010015319A1 (en) * 1999-02-09 2001-08-23 Choe Yong Sahm Process for producing thin film gas sensors with dual ion beam sputtering
CN101950643A (en) * 2010-08-06 2011-01-19 电子科技大学 Low resistance high TCR amorphous silicon film resistance and preparation method thereof
CN103572237A (en) * 2013-11-14 2014-02-12 中国科学院宁波材料技术与工程研究所 Preparation method of boron-doped diamond-like carbon film electrode
CN104388902A (en) * 2014-12-03 2015-03-04 中国科学院宁波材料技术与工程研究所 Carbon-based coating having high electrical conductivity on surface of substrate and preparation method of coating
CN104617177A (en) * 2015-01-09 2015-05-13 西安交通大学 Silicon-based nano-structure carbon film photoelectric detector based on ECR electronic irradiation and preparation method thereof
CN105241569A (en) * 2015-09-21 2016-01-13 中国科学院宁波材料技术与工程研究所 Metal-doped amorphous carbon film temperature-sensing element and preparation method therefor
CN105779950A (en) * 2014-12-25 2016-07-20 中国科学院兰州化学物理研究所 Low-temperature vapor deposition method for carbon-based super-lubricating thin film with onion structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010015319A1 (en) * 1999-02-09 2001-08-23 Choe Yong Sahm Process for producing thin film gas sensors with dual ion beam sputtering
CN101950643A (en) * 2010-08-06 2011-01-19 电子科技大学 Low resistance high TCR amorphous silicon film resistance and preparation method thereof
CN103572237A (en) * 2013-11-14 2014-02-12 中国科学院宁波材料技术与工程研究所 Preparation method of boron-doped diamond-like carbon film electrode
CN104388902A (en) * 2014-12-03 2015-03-04 中国科学院宁波材料技术与工程研究所 Carbon-based coating having high electrical conductivity on surface of substrate and preparation method of coating
CN105779950A (en) * 2014-12-25 2016-07-20 中国科学院兰州化学物理研究所 Low-temperature vapor deposition method for carbon-based super-lubricating thin film with onion structure
CN104617177A (en) * 2015-01-09 2015-05-13 西安交通大学 Silicon-based nano-structure carbon film photoelectric detector based on ECR electronic irradiation and preparation method thereof
CN105241569A (en) * 2015-09-21 2016-01-13 中国科学院宁波材料技术与工程研究所 Metal-doped amorphous carbon film temperature-sensing element and preparation method therefor

Similar Documents

Publication Publication Date Title
Dibbern A substrate for thin-film gas sensors in microelectronic technology
JP4873659B2 (en) Method for directly determining the boiling point of a fluid
JP6022881B2 (en) Strain gauge
CN104823031B (en) Temperature sensor
GB2179748A (en) Thermal flow sensor
JP2022009950A (en) Strain resistance film and strain sensor, and manufacturing method of them
CN102826602B (en) Thermistor material, temperature sensor, and manufacturing method thereof
WO2014038719A1 (en) Temperature sensor
WO2013147291A1 (en) Film-type thermistor sensor
WO2007091686A1 (en) Laminate, thin film sensor, thin film sensor module, and method for manufacturing the thin film sensor
CN104170031A (en) Metal nitride film for thermistor, process for producing same, and thermistor sensor of film type
WO2007114143A1 (en) Method for fabricating thin film sensor, thin film sensor and thin film sensor module
CN110132445B (en) Negative temperature coefficient resistance type deep low temperature sensor and preparation method thereof
JP2014182086A (en) Temperature sensor
JP2019192740A (en) Strain resistance film, strain sensor, and manufacturing method thereof
CN107389215A (en) A kind of superelevation linearity temperature sensor chip based on amorphous carbon-film
JP2014145655A (en) Temperature sensor
CN107389217A (en) A kind of temperature sensor chip based on ultra-high resistance temperature coefficient amorphous carbon film
CN107817058A (en) Inductance cantilever beam wireless and passive temperature sensor
Chiou et al. Liquid Phase Deposition Based ${\rm SnO} _ {2} $ Gas Sensor Integrated With TaN Heater on a Micro-Hotplate
CN104755940B (en) Pneumatic sensor
Wang et al. Effect of annealing on the performance of nickel thermistor on polyimide substrate
JP2004037402A (en) Thin film gas sensor
Bethe et al. Thin-film strain-gage transducers
JP2022074104A (en) Strain gauge and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20171124

WD01 Invention patent application deemed withdrawn after publication