CN107389203B - A kind of pixel reading circuit, array reading circuit and pixel read method - Google Patents
A kind of pixel reading circuit, array reading circuit and pixel read method Download PDFInfo
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- CN107389203B CN107389203B CN201710731093.9A CN201710731093A CN107389203B CN 107389203 B CN107389203 B CN 107389203B CN 201710731093 A CN201710731093 A CN 201710731093A CN 107389203 B CN107389203 B CN 107389203B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 21
- 230000005611 electricity Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 239000002096 quantum dot Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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Abstract
The present invention provides a kind of pixel reading circuit, array reading circuit and pixel read method, pixel reading circuit includes the first control module, the second control module and illuminant module；Illuminant module according to scanning signal and with sensitive volume variation first threshold voltage etc. to the second control module output voltage signal；Second control module controls the conducting and disconnection of illuminant module and the first control module according to the second enable signal；First control module exports photoreceptor signal according to the first enable signal；When pixel reading circuit provided by the present application is read for array image, working line and inoperative row can be selected by the first enable signal and the second enable signal, when the illuminant module that the setting of second control module avoids inoperative row is opened, the photoreceptor signal of working line output is raised or drags down, so all pixels reading circuit can share an analog scan signal, reduce the quantity of simulation signal generator, so as to simplify the design of AFE(analog front end), while reducing cost.
Description
Technical field
The present invention relates to technical field of photoelectric detection, more particularly to a kind of pixel reading circuit, array reading circuit and
Pixel read method.
Background technique
There is application in many equipment according to the technology that light distribution obtains respective image, such as infrared thermoviewer is fortune
With the infrared wave segment signal of detecting technique detection object heat radiation, convert the signal into for human vision resolution
Image and figure, and the Temperature Distribution of object can be further calculated out.Infrared imagery technique makes the mankind surmount dysopia,
Thus one can see that the temperature distribution state of body surface.Wherein, the process of image is converted to according to the optical signal of acquisition
It needs to be completed by pixel reading circuit.
The more pixel reading circuit of application includes a light sensing transistor and a transistor at present, as shown in Figure 1,
The grid of light sensing transistor connects scanning signal end Sn, and source electrode connects ground potential, and drain electrode connects the source electrode of transistor, transistor
Source electrode also connects a direct current power source voltage DC by resistance, and the grid of transistor connects enable signal end Mn, the drain electrode of transistor
It is signal output end Nn；When the pixel reading circuit of this structure is read for array image, the scanning signal of each pixel column
It must individually control, just be avoided that between pixel column and interfere with each other, this leads to the AFE(analog front end) complicated design of reading circuit, and
And higher cost.
Summary of the invention
The present invention provides a kind of pixel reading circuit, array reading circuit and pixel read method, to simplify reading circuit
AFE(analog front end) design, while reducing cost.
To solve the above-mentioned problems, the invention discloses a kind of pixel reading circuit, the pixel reading circuit includes the
One control module, the second control module and illuminant module；
First control module is separately connected the first enable signal input terminal, first node and voltage signal output end,
The first node connects first voltage signal input part, and first control module is used for according to the first enable signal and described
The voltage of first node is to the voltage signal output end output voltage signal；
Second control module is separately connected the second enable signal input terminal, the illuminant module and first node, uses
In controlling conducting and disconnection between the illuminant module and first control module according to the second enable signal；
The illuminant module is separately connected scanning signal input terminal and second voltage signal input part, for being believed according to scanning
Number, first threshold voltage and second voltage signal be to the second control module output voltage signal；The first threshold voltage
With the size variation of sensitive volume；
Wherein, first enable signal and second enable signal are for controlling first control module and described
Second control module opens or closes simultaneously；
In reading process, first control module and second control module are opened simultaneously；
The scanning signal changes within a preset range；
When the scanning signal is greater than the first threshold voltage, the illuminant module is opened, and the voltage signal is defeated
Outlet exports the first photoreceptor voltage signal；
When the scanning signal is less than or equal to the first threshold voltage, the illuminant module is closed, the voltage
Signal output end exports the second photoreceptor voltage signal.
Preferably, first control module includes the first transistor, and second control module includes second transistor,
The illuminant module includes light sensing transistor；
The first transistor includes the first control electrode, first electrode and second electrode；First control electrode connects institute
The first enable signal input terminal is stated, the first electrode connects the first node, and the second electrode connects the voltage letter
Number output end；
The second transistor includes the second control electrode, third electrode and the 4th electrode；Second control electrode connects institute
The second enable signal input terminal is stated, the third electrode connects the illuminant module, and the 4th electrode connects the first segment
Point；
The light sensing transistor includes third control electrode, the 5th electrode and the 6th electrode；The third control electrode connects institute
State scanning signal input terminal, the 5th electrode connects the second voltage signal input part, described in the 6th electrode connection
The third electrode of second transistor.
Preferably, the first transistor is identical as the channel type of the second transistor, first enable signal
It is identical as second enable signal.
Preferably, first voltage signal is high potential, and the second voltage signal is ground potential.
Preferably, the first voltage signal is ground potential, and the second voltage signal is high potential.
Preferably, the pixel reading circuit further includes a resistance, and the first node passes through described in resistance connection
First voltage signal input part.
Preferably, the scanning signal changes within a preset range, comprising:
The scanning signal is the signal in the preset range above and below dark-state threshold voltage from high to low；The dark-state threshold
Threshold voltage is sensitive volume when being zero, the threshold voltage of the illuminant module.
Preferably, the scanning signal changes within a preset range, comprising:
The scanning signal is the signal in the preset range above and below dark-state threshold voltage from low to high；The dark-state threshold
Threshold voltage is sensitive volume when being zero, the threshold voltage of the illuminant module.
To solve the above-mentioned problems, the invention also discloses a kind of array reading circuit, the array reading circuit includes
Multiple any of the above-described pixel reading circuits, multiple pixel reading circuit array arrangements；
The scanning signal input terminal of pixel reading circuit described in each row is connected to total scanning signal input terminal；
The first voltage signal of the first voltage signal input part input of pixel reading circuit described in each row is all the same；
The second voltage signal of the second voltage signal input part input of pixel reading circuit described in each row is all the same；
The the first enable signal input terminal and the second enable signal input terminal of pixel reading circuit described in every row are connected to row
Enable signal input terminal；
The voltage signal output end of pixel reading circuit described in each column is connected to column voltage signal output end.
To solve the above-mentioned problems, the invention also discloses a kind of pixel read methods, applied to any of the above-described described
Pixel reading circuit, which comprises
In the reading stage, controlling first enable signal and second enable signal makes first control module and institute
It states the second control module while opening；
The scanning signal is controlled to change within a preset range；
When the scanning signal is greater than the first threshold voltage, the illuminant module is opened, and the voltage signal is defeated
Outlet exports the first photoreceptor voltage signal；
When the scanning signal is less than or equal to the first threshold voltage, the illuminant module is closed, the voltage
Signal output end exports the second photoreceptor voltage signal.
Compared with prior art, the invention has the following advantages that
The embodiment of the present application provides a kind of pixel reading circuit, including the first control module, the second control module and sense
Optical module；Illuminant module is controlled according to scanning signal, with the first threshold voltage and second voltage signal of sensitive volume variation to second
Molding block output voltage signal；Second control module controls leading for illuminant module and the first control module according to the second enable signal
Through and off are opened；First control module exports the photoreceptor signal changed with scanning signal according to the first enable signal；The application provides
Pixel reading circuit when being read for array image, the first enable signal and the second enable signal can be passed through and select working line
With inoperative row, when the illuminant module that the setting of the second control module avoids inoperative row is opened, working line is exported photosensitive
Signal is raised or drags down, so the scanning signal input terminal of each row pixel reading circuit can connect to a total scanning letter
Number input terminal, i.e. all pixels reading circuit can share an analog scan signal, reduce the quantity of simulation signal generator, from
And it can simplify the design of AFE(analog front end), while reducing cost.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by institute in the description to the embodiment of the present invention
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structural schematic diagram of pixel reading circuit in the prior art；
Fig. 2 is a kind of structural schematic diagram for pixel reading circuit that the embodiment of the present application one provides；
Fig. 3 is a kind of structural schematic diagram for pixel reading circuit that the embodiment of the present application two provides；
Fig. 4 is a kind of structural schematic diagram for array reading circuit that the embodiment of the present application three provides；
Fig. 5 is a kind of signal control sequential figure for array reading circuit that the embodiment of the present application three provides；
Fig. 6 is a kind of step flow chart for pixel read method that the embodiment of the present application four provides.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
Referring to Fig. 2, a kind of structural schematic diagram of pixel reading circuit of the offer of the present embodiment one is shown, the pixel is read
Sense circuit includes: the first control module 01, the second control module 02 and illuminant module 03.
First control module 01 is separately connected the first enable signal input terminal 04, first node 05 and voltage signal output end
07, first node 05 connects first voltage signal input part 06, and the first control module 01 is used for according to the first enable signal and the
The voltage of one node 05 is to 07 output voltage signal of voltage signal output end.
Second control module 02 is separately connected the second enable signal input terminal 08, illuminant module 03 and first node 05, uses
According to the conducting and disconnection between the second enable signal control illuminant module 03 and the first control module 01.
Illuminant module 03 is separately connected scanning signal input terminal 09 and second voltage signal input part 10, for according to scanning
Signal, first threshold voltage and second voltage signal are to 02 output voltage signal of the second control module；First threshold voltage personal comments
The size variation of light quantity.
Specifically, may be implemented there are many structure types of 02 function of the first control module 01 or the second control module, example
Such as, it can be the composite structure of p-type or N-type transistor or several transistors.In practical applications, pass through control first
Enable signal and the second enable signal make the first control module 01 and the second control module 02 while opening or closing.Specific knot
Structure can determine that the application is not construed as limiting this according to practical application.
The structure of illuminant module 03 can also there are many, for example, it may be light sensing transistor, can also be photodiode
Etc. the element that can be converted to electric signal according to sensitive volume.
In practical applications, first voltage signal and second voltage signal can have according to the needs of voltage output signal
Body setting, such as first voltage signal can be high potential, and second voltage signal is ground potential.In another implementation,
First voltage signal can also be ground potential, and second voltage signal is high potential.
Scanning signal input terminal 09 input scanning signal change within a preset range, for example, scanning signal can for
Signal in preset range above and below dark-state threshold voltage from high to low；Dark-state threshold voltage is sensitive volume when being zero, photosensitive mould
The threshold voltage of block.In another implementation, scanning signal can also be the preset range above and below dark-state threshold voltage
Inside signal from low to high.
In reading process, the first control module 01 and the second control module 02 are opened simultaneously.
When scanning signal is greater than first threshold voltage, illuminant module 03 is opened, the output of voltage signal output end 07 first
Photoreceptor voltage signal；
When scanning signal is less than or equal to first threshold voltage, illuminant module 03 is closed, and voltage signal output end 07 is defeated
Second photoreceptor voltage signal out.
In another implementation, which can also include a resistance, and first node 05 passes through resistance
First voltage signal input part 06 is connected, resistance plays the role of shunting here.
Present embodiments provide a kind of pixel reading circuit, including the first control module, the second control module and photosensitive mould
Block；Illuminant module controls mould to second according to scanning signal, with the first threshold voltage and second voltage signal of sensitive volume variation
Block output voltage signal；Second control module according to the second enable signal control the conducting of illuminant module and the first control module with
It disconnects；First control module exports the photoreceptor signal changed with scanning signal according to the first enable signal；Picture provided by the present application
When plain reading circuit is read for array image, working line and non-can be selected by the first enable signal and the second enable signal
Working line, when the illuminant module that the setting of the second control module avoids inoperative row is opened, the photoreceptor signal of working line output
Be raised or drag down, thus the scanning signal input terminal of each row pixel reading circuit can connect it is defeated to a total scanning signal
Entering end, i.e., all pixels reading circuit can share an analog scan signal, reduce the quantity of simulation signal generator, so as to
To simplify the design of AFE(analog front end), while reducing cost.
Embodiment two
Referring to Fig. 3, a kind of structural schematic diagram of pixel reading circuit of the offer of the present embodiment two is shown, which reads
Circuit includes the first transistor 001, second transistor 002 and light sensing transistor 003.
The first transistor 001 includes the first control electrode, first electrode and second electrode；First control electrode connection first is enabled
Signal input part 04, first electrode connect first node 05, and first node 05 connects first voltage signal input part by resistance
06, second electrode connects voltage signal output end 07.
Second transistor 002 includes the second control electrode, third electrode and the 4th electrode；Second control electrode connection second is enabled
Signal input part 08, third electrode connect light sensing transistor 003, and the 4th electrode connects first node 05.
Light sensing transistor 003 includes third control electrode, the 5th electrode and the 6th electrode；Third control electrode connects scanning signal
Input terminal 09, the 5th electrode connect second voltage signal input part 10, and the 6th electrode connects the third electricity of second transistor 002
Pole.
In the present embodiment, light sensing transistor 003 is by taking quantum dot oxide thin-film transistor device QD-TFT as an example, due to
QD-TFT can be in the drift for causing threshold voltage after illumination, and maximum drift amount can reach 4~8V.Assuming that N-shaped QD-TFT's is dark
State threshold voltage is Vth, and negative direction drift a is generated under certain sensitive volume, wherein different sensitive volumes corresponds to different a values,
Therefore the first threshold voltage after illumination is Vth-a.
In practical applications, by the first enable signal of control and the second enable signal, make the first transistor 001 and second
Transistor 002 opens or closes simultaneously.In the preferred embodiment of the present embodiment, the first transistor 001 and second transistor 002
Channel type can be identical, the first enable signal and the second enable signal can be two voltage signals controlled respectively,
It can be two identical voltage signals or share same voltage signal.When the two is identical voltage signal or is shared same
When one voltage signal, which needs the threshold simultaneously above the first transistor 001 and second transistor 002 in open stage
Threshold voltage needs in closed stage while being lower than the threshold voltage of the first transistor 001 and second transistor 002.Optionally,
One transistor 001 is identical with the threshold voltage of second transistor 002.
In the present embodiment, first voltage signal is high potential, and second voltage signal is ground potential.Scanning signal is dark
Sawtooth wave in preset range above and below state threshold voltage from high to low.
Reading process is introduced below with reference to pixel reading circuit provided in this embodiment:
In reading process, controlling the first enable signal and the second enable signal makes the first transistor 001 and the second crystal
Pipe 002 simultaneously turns on.
Since scanning signal is the sawtooth wave in the preset range above and below dark-state threshold voltage from high to low, when scanning is believed
Number be greater than first threshold voltage Vth-a when, light sensing transistor 003 be connected, due to light sensing transistor the 5th electrode connect second
Voltage signal inputs 10, and second voltage signal is ground potential, so the current potential of voltage signal output end 07 passes through photosensitive crystalline substance
Body pipe is pulled low, that is, exports the first photoreceptor voltage signal.
As the voltage of scanning signal gradually decreases, when the scanning signal is less than or equal to the first threshold voltage
When Vth-a, light sensing transistor 003 is disconnected, and the current potential that voltage signal output end 07 exports no longer passes through light sensing transistor 003 and is connected to
Ground potential is only connected to first voltage signal input part 06 by resistance, and first voltage signal is high potential, so voltage is believed
Number output end 07 exports high potential, i.e. the second photoreceptor voltage signal.
In the present embodiment, when being opened by the illuminant module that the setting of second transistor avoids inoperative row, work
Row output photoreceptor signal be raised or drag down, so the scanning signal input terminal of each row pixel reading circuit can connect to
One total scanning signal input terminal, i.e. all pixels reading circuit can share an analog scan signal, reduce simulation letter
The quantity in number source so as to simplify the design of AFE(analog front end), while reducing cost.
Embodiment three
Referring to Fig. 4, a kind of structural schematic diagram of array reading circuit of the offer of the present embodiment three is shown, which reads
Circuit includes multiple pixel reading circuits as in above-mentioned any embodiment, multiple pixel reading circuit array arrangements.
The scanning signal input terminal of pixel reading circuit described in each row is connected to total scanning signal input terminal S.
The first voltage signal of the first voltage signal input part input of pixel reading circuit described in each row is all the same.
The second voltage signal of the second voltage signal input part input of pixel reading circuit described in each row is all the same.
The the first enable signal input terminal and the second enable signal input terminal of pixel reading circuit described in every row are connected to row
Enable signal input terminal M1, M2 ... Mn.
The voltage signal output end of pixel reading circuit described in each column is connected to column voltage signal output end N1, N2 ... Nn.
In the present embodiment, total scanning signal S is the saw in the preset range above and below dark-state threshold voltage from high to low
Tooth wave, first voltage signal are high potential V, and second voltage signal is ground potential.
In practical applications, when the first row is started to work, M1 makes other two transistor in addition to light sensing transistor
It opens, for signal control sequential figure as shown in figure 5, SYNC is line synchronising signal, CLK is clock signal.At this point, due to scanning signal
For sawtooth wave from high to low, the pixel of first threshold voltage is greater than for scanning signal or grid voltage, corresponding voltage is defeated
The current potential of outlet output is pulled low by light sensing transistor.As the voltage of scanning signal gradually decreases, part picture in the first row
The grid voltage of light sensing transistor in element drops to first threshold voltage hereinafter, closing light sensing transistor, and eventually leads to this
The current potential of the voltage output end output of a little pixels no longer passes through light sensing transistor and is connected to ground potential, but is pulled to height by resistance
Current potential.
Since the sensitive volume of different pixels is different, the threshold voltage shift amount a of each light sensing transistor is also different.With sweeping
Retouch voltage from high to low, the shutdown moment of light sensing transistor is different in each pixel, i.e. the height of voltage signal output end output
Potential duration is different.According to the high potential duration that each pixel exports, just the sensitive volume of each pixel can be carried out
It reads.
Array reading circuit provided in this embodiment, when certain a line pixel operation, since the enable signal of other rows is equal
For low level, so that the first transistor and second transistor in other rows are completely in off state.The first transistor avoids
Voltage signal output end accesses ground potential or high potential by inoperative row.Second transistor avoids the photosensitive of inoperative row
When transistor is opened, the output signal of working line is raised or drags down.The first transistor and second transistor are played working line
The effect being isolated with inoperative allows each row to share the same scanning signal, avoids every row and requires independent scanning letter
Number, simplify the design of AFE(analog front end).
Example IV
Referring to Fig. 6, a kind of pixel read method of the offer of the present embodiment four is shown, is applied in any of the above-described embodiment
Pixel reading circuit, which includes:
Step 401: reading the stage, controlling the first enable signal and the second enable signal controls the first control module and second
Molding block is opened simultaneously.
Step 402: control scanning signal changes within a preset range.
Step 403: when scanning signal is greater than first threshold voltage, illuminant module is opened, voltage signal output end output
First photoreceptor voltage signal.
Step 404: when scanning signal is less than or equal to first threshold voltage, illuminant module is closed, voltage signal output
The second photoreceptor voltage signal of end output.
In practical applications, by taking N-shaped QD-TFT device as an example, it is assumed that dark-state threshold voltage vt h generates negative direction after irradiation
Drift a, wherein different sensitive volumes corresponds to different a values, therefore the first threshold voltage after irradiation is Vth-a.
Firstly, being corrected under dark-state environment, the voltage of scanning signal input terminal input is VH, and wherein VH is greater than dark-state
Threshold voltage vt h, voltage signal output end is low potential at this time；The voltage of scanning signal input terminal input gradually decreases, when small
When Vth, the voltage signal of voltage signal output end is jumped by low potential into high potential, records the corresponding scanning electricity of trip point
Pressure value, i.e. dark-state threshold voltage vt h.
During image reading, the initial voltage of scanning signal input terminal is VH (being greater than Vth), and voltage signal is defeated at this time
It is low potential that outlet, which exports current potential,；Scanning signal input terminal voltage is gradually reduced, when the voltage of input is less than Vth-a, voltage
The current potential of signal output end output is changed to high potential by low potential, records the corresponding scanning voltage value of trip point, i.e., and first
Threshold voltage vt h-a.
Corresponding sensitive volume lower threshold value drift can be calculated according to first threshold voltage Vth-a and dark-state threshold voltage vt h
Shifting amount a can be calculated sensitive volume according to threshold drift amount, and then the corresponding gray value of respective pixel can be calculated.
In array reading circuit, it can be calculated separately to obtain each pixel according to the method for the above pixel reading circuit
Gray value, the duration difference for the voltage signal high potential that can also be exported according to each pixel reading circuit, is calculated phase
To gray value, and then read image.
The embodiment of the present application provides a kind of pixel reading circuit, including the first control module, the second control module and sense
Optical module；Illuminant module is controlled according to scanning signal, with the first threshold voltage and second voltage signal of sensitive volume variation to second
Molding block output voltage signal；Second control module controls leading for illuminant module and the first control module according to the second enable signal
Through and off are opened；First control module exports the photoreceptor signal changed with scanning signal according to the first enable signal；The application provides
Pixel reading circuit when being read for array image, the first enable signal and the second enable signal can be passed through and select working line
With inoperative row, when the illuminant module that the setting of the second control module avoids inoperative row is opened, working line is exported photosensitive
Signal is raised or drags down, so the scanning signal input terminal of each row pixel reading circuit can connect to a total scanning letter
Number input terminal, i.e. all pixels reading circuit can share an analog scan signal, reduce the quantity of simulation signal generator, from
And it can simplify the design of AFE(analog front end), while reducing cost.
For the various method embodiments described above, for simple description, therefore, it is stated as a series of action combinations, but
Be those skilled in the art should understand that, the present invention is not limited by the sequence of acts described because according to the present invention, certain
A little steps can be performed in other orders or simultaneously.
Secondly, those skilled in the art should also know that, the embodiments described in the specification are all preferred embodiments,
It is related that actions and modules are not necessarily necessary for the present invention.
All the embodiments in this specification are described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiments, the same or similar parts between the embodiments can be referred to each other.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, commodity or the equipment that include a series of elements not only include that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, commodity or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in process, method, commodity or the equipment for including the element.
Above to a kind of pixel reading circuit provided by the present invention, array reading circuit and pixel read method, carry out
It is discussed in detail, used herein a specific example illustrates the principle and implementation of the invention, above embodiments
Explanation be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art,
According to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusion in this specification
Appearance should not be construed as limiting the invention.
Claims (10)
1. a kind of pixel reading circuit, which is characterized in that the pixel reading circuit includes the first control module, the second control mould
Block and illuminant module；
First control module is separately connected the first enable signal input terminal, first node and voltage signal output end, described
First node connects first voltage signal input part, and first control module is used for according to the first enable signal and described first
The voltage of node is to the voltage signal output end output voltage signal；
Second control module is separately connected the second enable signal input terminal, the illuminant module and first node, is used for root
The conducting and disconnection between the illuminant module and first control module are controlled according to the second enable signal；
The illuminant module is separately connected scanning signal input terminal and second voltage signal input part, for according to scanning signal,
First threshold voltage and second voltage signal are to the second control module output voltage signal；The first threshold voltage personal comments
The size variation of light quantity；
Wherein, first enable signal and second enable signal are for controlling first control module and described second
Control module opens or closes simultaneously；
In reading process, first control module and second control module are opened simultaneously；
The scanning signal changes within a preset range；
When the scanning signal is greater than the first threshold voltage, the illuminant module is opened, the voltage signal output end
Export the first photoreceptor voltage signal；
When the scanning signal is less than or equal to the first threshold voltage, the illuminant module is closed, the voltage signal
Output end exports the second photoreceptor voltage signal.
2. pixel reading circuit according to claim 1, which is characterized in that first control module includes first crystal
Pipe, second control module includes second transistor, and the illuminant module includes light sensing transistor；
The first transistor includes the first control electrode, first electrode and second electrode；First control electrode connection described the
One enable signal input terminal, the first electrode connect the first node, and it is defeated that the second electrode connects the voltage signal
Outlet；
The second transistor includes the second control electrode, third electrode and the 4th electrode；Second control electrode connection described the
Two enable signal input terminals, the third electrode connect the illuminant module, and the 4th electrode connects the first node；
The light sensing transistor includes third control electrode, the 5th electrode and the 6th electrode；It is swept described in the third control electrode connection
Signal input part is retouched, the 5th electrode connects the second voltage signal input part, the 6th electrode connection described second
The third electrode of transistor.
3. pixel reading circuit according to claim 2, which is characterized in that the first transistor and second crystal
The channel type of pipe is identical, and first enable signal is identical as second enable signal.
4. pixel reading circuit according to claim 1, which is characterized in that first voltage signal is high potential, described the
Two voltage signals are ground potential.
5. pixel reading circuit according to claim 1, which is characterized in that the first voltage signal is ground potential, institute
Stating second voltage signal is high potential.
6. pixel reading circuit according to claim 1, which is characterized in that the pixel reading circuit further includes an electricity
Resistance, the first node connect the first voltage signal input part by the resistance.
7. pixel reading circuit according to any one of claims 1 to 6, which is characterized in that the scanning signal is in default model
Enclose interior variation, comprising:
The scanning signal is the signal in the preset range above and below dark-state threshold voltage from high to low；The dark-state threshold value electricity
Pressure is sensitive volume when being zero, the threshold voltage of the illuminant module.
8. pixel reading circuit according to any one of claims 1 to 6, which is characterized in that the scanning signal is in default model
Enclose interior variation, comprising:
The scanning signal is the signal in the preset range above and below dark-state threshold voltage from low to high；The dark-state threshold value electricity
Pressure is sensitive volume when being zero, the threshold voltage of the illuminant module.
9. a kind of array reading circuit, which is characterized in that the array reading circuit includes multiple as appointed in claim 1 to 8
Pixel reading circuit described in one, multiple pixel reading circuit array arrangements；
The scanning signal input terminal of pixel reading circuit described in each row is connected to total scanning signal input terminal；
The first voltage signal of the first voltage signal input part input of pixel reading circuit described in each row is all the same；
The second voltage signal of the second voltage signal input part input of pixel reading circuit described in each row is all the same；
The the first enable signal input terminal and the second enable signal input terminal of pixel reading circuit described in every row are connected to enforcement energy
Signal input part；
The voltage signal output end of pixel reading circuit described in each column is connected to column voltage signal output end.
10. a kind of pixel read method, applied to the pixel reading circuit as described in any in claim 1 to 8, feature exists
In, which comprises
In the reading stage, controlling first enable signal and second enable signal makes first control module and described the
Two control modules are opened simultaneously；
The scanning signal is controlled to change within a preset range；
When the scanning signal is greater than the first threshold voltage, the illuminant module is opened, the voltage signal output end
Export the first photoreceptor voltage signal；
When the scanning signal is less than or equal to the first threshold voltage, the illuminant module is closed, the voltage signal
Output end exports the second photoreceptor voltage signal.
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| CN201710731093.9A CN107389203B (en) | 2017-08-23 | 2017-08-23 | A kind of pixel reading circuit, array reading circuit and pixel read method |
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| CN107389203B true CN107389203B (en) | 2019-08-02 |
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| JP4234959B2 (en) * | 2002-07-12 | 2009-03-04 | 日本放送協会 | Solid-state imaging device |
| JP2009124514A (en) * | 2007-11-15 | 2009-06-04 | Sony Corp | Solid-state imaging device and camera system |
| JP4943525B2 (en) * | 2010-03-10 | 2012-05-30 | 株式会社半導体エネルギー研究所 | MOS type sensor, module and electronic device |
| CN103354082B (en) * | 2013-06-26 | 2015-09-09 | 京东方科技集团股份有限公司 | A kind of touch driving circuit, liquid crystal panel and driving method thereof |
| CN104134426B (en) * | 2014-07-07 | 2017-02-15 | 京东方科技集团股份有限公司 | Pixel structure and driving method thereof, and display device |
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