CN107386540A - A kind of photovoltaic polymetal crust material - Google Patents
A kind of photovoltaic polymetal crust material Download PDFInfo
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- CN107386540A CN107386540A CN201710542015.4A CN201710542015A CN107386540A CN 107386540 A CN107386540 A CN 107386540A CN 201710542015 A CN201710542015 A CN 201710542015A CN 107386540 A CN107386540 A CN 107386540A
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- photovoltaic
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000003292 glue Substances 0.000 claims abstract description 22
- 239000012943 hotmelt Substances 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 6
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 19
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 9
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 9
- 239000004677 Nylon Substances 0.000 claims description 7
- 229920001778 nylon Polymers 0.000 claims description 7
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims description 4
- FHKNFXAIEAYRKQ-UHFFFAOYSA-N [Cu].[Ir] Chemical group [Cu].[Ir] FHKNFXAIEAYRKQ-UHFFFAOYSA-N 0.000 claims description 4
- 235000010354 butylated hydroxytoluene Nutrition 0.000 claims description 4
- YCZJVRCZIPDYHH-UHFFFAOYSA-N ditridecyl benzene-1,2-dicarboxylate Chemical compound CCCCCCCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCCCCCCC YCZJVRCZIPDYHH-UHFFFAOYSA-N 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- -1 ethylhexyl Chemical group 0.000 claims description 4
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims description 4
- 239000004200 microcrystalline wax Substances 0.000 claims description 4
- 239000012188 paraffin wax Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 150000003505 terpenes Chemical class 0.000 claims description 4
- 235000007586 terpenes Nutrition 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 4
- 229920000297 Rayon Polymers 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 53
- 239000010410 layer Substances 0.000 description 41
- 238000005452 bending Methods 0.000 description 5
- 239000002905 metal composite material Substances 0.000 description 5
- 239000004831 Hot glue Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
- E04D5/00—Roof covering by making use of flexible material, e.g. supplied in roll form
- E04D5/10—Roof covering by making use of flexible material, e.g. supplied in roll form by making use of compounded or laminated materials, e.g. metal foils or plastic films coated with bitumen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a kind of photovoltaic polymetal crust material, include metal substrate layer, photovoltaic film superficial layer and fixed for metal substrate layer, the mutual gluing of photovoltaic film superficial layer and the hot melt adhesion oxidant layer of mutually insulated.It is an advantage of the invention that it is compound without later stage viscose glue, and suitable for being directly processed into specific frame shape by clod wash processing technology.
Description
Technical field
The invention belongs to photovoltaic and field of material technology, in particular to a kind of photovoltaic polymetal crust material.
Background technology
With the development of photovoltaic technology, the thin film solar photovoltaic products using copper iridium gallium selenium film as representative continuously emerge.
These photovoltaic products are required for agreing to supporting body to carry out installation generating, are limited to supporting body geometry and installation load-bearing,
Need to take substantial amounts of plane space resource.In addition, in the prior art, the supporting body of photovoltaic cell is all in advance according to installation position
Put and manufactured in advance with purposes, be then again fixed thereon photovoltaic cell by support or fastener.
The metal framework such as still further aspect, door window frame or highway barrier, street lamp in current building occupies
Substantial amounts of light-receiving area, and if these areas can be used to carry out photovoltaic generation, then drastically increase photovoltaic products
The problem of taking extra mounting space.But problems of the prior art are：
（1）Lack a kind of adhesive of stabilization by photovoltaic film Material cladding on metal base；
（2）Photovoltaic film material is fixed on by follow-up viscose glue has been molded into the metal bases such as door window frame or highway barrier
Upper Compound Machining is extremely difficult.
The content of the invention
The invention aims to overcome shortcoming and defect existing for prior art, and one kind is provided without later stage viscose glue
It is compound, and suitable for being directly processed into the photovoltaic polymetal crust material of specific frame shape by clod wash processing technology.
To achieve the above object, the technical scheme is that include metal substrate layer, photovoltaic film superficial layer and
Fixed for metal substrate layer, the mutual gluing of photovoltaic film superficial layer and the hot melt adhesion oxidant layer of mutually insulated.
It is that the photovoltaic polymetal crust material is coiled material further to set.
It is that metal substrate layer is aluminum alloy base material, aluminium base, heat zinc coating plate base material or stainless steel substrate further to set.
It is that described photovoltaic film superficial layer is flexible photovoltaic film further to set.Specially described photovoltaic film surface
Layer is copper iridium gallium selenium photovoltaic film, female cadmium photovoltaic film or amorphous silicon photovoltaic film.
Further set is that the width of described metal substrate layer is more than the width of photovoltaic film superficial layer, described photovoltaic
Film surface layer is centrally located in a side surface of metal substrate layer, and described metal substrate layer is relative to photovoltaic film superficial layer
The region of upper and lower both sides forms clod wash processing district, and the photovoltaic film superficial layer includes length side of the multistage along metal substrate layer
To spaced distribution photovoltaic film disjunction piece form, metal substrate layer relative to two sections of adjacent photovoltaic film disjunction pieces it
Between region form coiled flexural deformation Ying Liang areas, it is that the width of clod wash processing district be at least 5cm further to set, and is bent in rolls
The width for deforming Ying Liang areas is at least 2mm.By this setting, the convenient follow-up progress clod wash processing in clod wash processing district, and it is coiled curved
When song deformation Ying Liang areas then facilitate photovoltaic polymetal crust material wound, there are enough deformation amounts of being full of, prevent metal substrate layer
Between photovoltaic film superficial layer due to a lack of the deformation amount of being full of stress sidesway.
It is that described hot melt adhesion oxidant layer includes following components further to set：Include for being coated on metal base
Layer side metal-to-metal adhesive and for the photovoltaic film glue coated on photovoltaic film superficial layer side, the metal-to-metal adhesive and photovoltaic film glue
Mutually it is adjacent under hot melt state and bonds after the cooling period；
The metal-to-metal adhesive includes following components, in terms of mass fraction：
Nylon type copolyamide 45-50 parts
Ethylene-vinyl acetate copolymer 15-20 parts
Terpene resin 10-15 parts；
C9 Petropols 10-15 parts；
Microwax or paraffin 3-5 parts；
Ditridecyl phthalate fourth 1-2 parts
2,6 di tert butyl 4 methyl phenol 0.5-1.5 parts；
The ethylhexyl of tert-butyl hydroperoxide-2-carbonic ester 0.5-1 parts；
Aerosil 0-1 parts；
The photovoltaic film glue includes following components, in terms of mass fraction：
Ethylene-vinyl acetate copolymer 45-50 parts
Nylon type copolyamide 15-20 parts
Terpene resin 10-15 parts；
C9 Petropols 10-15 parts；
Microwax or paraffin 5-6 parts；
Ditridecyl phthalate fourth 1-2 parts
2,6 di tert butyl 4 methyl phenol 0.5-1.5 parts；
The ethylhexyl of tert-butyl hydroperoxide-2-carbonic ester 0.5-1 parts.
The present invention Innovation Mechanism and advantage be：
（1）Can clod wash：Ply-metal employs the new technology of hot melts agent, and the crucial technology of ply-metal is referred to
Mark-can cold roll forming, toughness is high, bending is indeformable not broken, and two kinds of metals of 180 degree hardness bending are not shifted over peeling off,
With can the special-performance such as punching press, stretching.By cold-bending molding technology the material can be processed into street lamp, door and window, guardrail,
Mansion curtain wall etc., drastically increase the generating area of photovoltaic.Realize construction material or exterior wall with photovoltaic electric power function
Ornament materials, construction is the steel-structure factory building or building with photovoltaic electric power, is all many photovoltaic stereo power stations.
（2）Using special hot melts agent, there is advantages below：
（2.1）The metal-to-metal adhesive and photovoltaic film glue configured using different component, is respectively used to be coated on metal base side and light
Film side is lied prostrate, it is then mutually compound between metal-to-metal adhesive and photovoltaic film glue, it is this to be equipped with, it is contemplated that various metals member
The metal base of element composition and the gluing characteristic on the photovoltaic film surface being made up of various metals and non-metallic substrate, respectively by not
Metal-to-metal adhesive and photovoltaic film glue with component formula carry out matching bonding, then again by the metal-to-metal adhesive in similar compositions system and
The progress of photovoltaic film glue is compound, and so as to drastically increase gluing stability, the peel strength of the hot melts agent is brought up to
Splendid state（150N/CM）, consequently facilitating the finished product holding surface flatness after keeping compound.
（2.2）The EVA components of different component are set in metal-to-metal adhesive and photovoltaic film glue, and the EVA components have outstanding electricity
Insulation and rigidity, wearability, pliability, stress cracking resistance, impact and low temperature adhesion, pass through the EVA components so that this
The hot melt adhesive of invention is inherently into insulating barrier and shock-resistant layer, so as to the production after photovoltaic film and metal composite
Product（Photovoltaic polymetal crust material）When subsequently progress clod wash processing technology is molded, photovoltaic film and metal can be prevented
Between hot melt adhesive layer be broken in bending part, cause failure of insulation, while be also convenient for the material making coiled material.
（2.3）The metal-to-metal adhesive side of the present invention sets 45-50 parts（Largely）The nylon type copolyamide of ratio so that this hair
The bright hot melt adhesive layer formed between photovoltaic film and metal forms the sealant with watertightness in the side of the metal-to-metal adhesive, from
And prevent that hydrone from mutually shifting between metal and photovoltaic film, anti-corrosive properties are drastically increased, and the photovoltaic of opposite side is thin
The nylon type copolyamide that 15-20 parts are set in film glue is compound viscous between photovoltaic film glue in order to ensure between metal-to-metal adhesive
Property intensity.
（3）Material easy processing, its superior application property of photovoltaic multi-metal composite material, only need simple machine tool can be complete
Into cutting, cut, plane side, bend camber, right angle various appearance, can matching design personnel, make various changes, install
Simplicity, fast reduce construction cost.
（4）Fire prevention, thermal and insulating performance are remarkable：Be among photovoltaic multi-metal composite material hot melts agent be resistant to 180 degree,
Subzero 50 degree of low temperature.Therefore, it is a kind of insulation fire safety material, meets fire resisting needs and the environmental protection and energy saving of building laws
Requirement.There is the advantage of uniqueness in terms of photovoltaic multi-metal composite material weatherability simultaneously, it is no matter under the sunlight of sweltering heat or tight
It can all be used throughout one's life without detriment to its beautiful outward appearance in cold wind and snow.
The present invention is described further with reference to specification drawings and specific embodiments.
Brief description of the drawings
Fig. 1 specific embodiment of the invention structural representations；
Fig. 2 specific embodiment of the invention composite construction enlarged diagrams;
Fig. 3 specific embodiment of the invention front schematic views；
Fig. 4 is the enlarged drawing of A in Fig. 3.
Embodiment
The present invention is specifically described below by embodiment, is served only for that the present invention is further described, no
It is understood that for limiting the scope of the present invention, the technician in the field can be according to the content of foregoing invention to the present invention
Make some nonessential modifications and adaptations.
Embodiment of the invention as Figure 1-4, photovoltaic multi-metal composite material, includes metal substrate layer
1st, photovoltaic film superficial layer 2 and fix for metal substrate layer 1,2 mutual gluing of photovoltaic film superficial layer and mutually insulated
Hot melt adhesion oxidant layer 3.The present embodiment photovoltaic polymetal crust material is coiled material.Metal substrate layer 1 is aluminum alloy base material, aluminium base
Material, heat zinc coating plate base material or stainless steel substrate.Described photovoltaic film superficial layer 2 is copper iridium gallium selenium photovoltaic film, female cadmium, non-
The flexible photovoltaic film such as crystal silicon.
The width of metal substrate layer described in the present embodiment is more than the width of photovoltaic film superficial layer, described photovoltaic film
Superficial layer is centrally located in a side surface of metal substrate layer, described metal substrate layer relative to photovoltaic film superficial layer above and below
The region of both sides forms clod wash processing district a, and the photovoltaic film superficial layer includes length direction of the multistage along metal substrate layer
The photovoltaic film disjunction piece 21 of spaced distribution forms, metal substrate layer relative to two sections of adjacent photovoltaic film disjunction pieces it
Between region form coiled flexural deformation Ying Liang areas b, the width of the present embodiment clod wash processing district be at least 5cm, coiled bending change
The width in Xing Yingliang areas is at least 2mm.By this setting, the convenient follow-up progress clod wash processing of clod wash processing district a, and bend in rolls
When deforming Ying Liang area b and then facilitating photovoltaic polymetal crust material wound, there is enough deformation amounts of being full of, prevent metal substrate layer and
Between photovoltaic film superficial layer due to a lack of the deformation amount of being full of stress sidesway.
The special hot melt adhesive of the present invention includes for the metal-to-metal adhesive coated on metal base side and for applying
The photovoltaic film glue of photovoltaic film side is overlying on, the metal-to-metal adhesive and photovoltaic film glue are mutually adjacent to and cooled down under hot melt state
After bond；
The metal-to-metal adhesive includes following components, in terms of mass fraction：
The photovoltaic film glue includes following components, in terms of mass fraction：
The quality of ethylene moiety accounts for whole ethylene-vinyl acetate copolymer in ethylene-vinyl acetate copolymer described in the present embodiment
Mass ratio be 50-55wt%, preferably 50wt%.
The present embodiment nylon type copolyamide softening point 180（℃）：± 5 resistance to low temperature (DEG C)≤- 20 elongation percentage (%)
>=400 temperature in use（℃）：200-230 characteristics：Cohesive is strong, tensile strength is big, low temperature flexibility is good, thermostabilization is good.
The metal-to-metal adhesive and photovoltaic film glue of the present invention is well mixed using by each component input high-speed mixer；Then will
The material mixed is put into double screw extruder, is extruded after melting, produces the metal-to-metal adhesive and photovoltaic film glue, two kinds of hot melts
Glue packing uses.
Claims (8)
- A kind of 1. photovoltaic polymetal crust material, it is characterised in that：Include metal substrate layer, photovoltaic film superficial layer and Fixed for metal substrate layer, the mutual gluing of photovoltaic film superficial layer and the hot melt adhesion oxidant layer of mutually insulated.
- 2. the photovoltaic polymetal crust material according to right 1, it is characterised in that：The photovoltaic polymetal crust material is volume Material.
- 3. the photovoltaic polymetal crust material according to right 1, it is characterised in that：Metal substrate layer is aluminum alloy base material, aluminium Base material, heat zinc coating plate base material or stainless steel substrate.
- 4. the photovoltaic polymetal crust material according to right 1, it is characterised in that：Described photovoltaic film superficial layer is flexibility Photovoltaic film.
- 5. the photovoltaic polymetal crust material according to right 4, it is characterised in that：The photovoltaic film superficial layer is copper iridium gallium Selenium photovoltaic film, female cadmium photovoltaic film or amorphous silicon photovoltaic film.
- 6. the photovoltaic polymetal crust material according to right 2, it is characterised in that：The width of described metal substrate layer is more than The width of photovoltaic film superficial layer, described photovoltaic film superficial layer is centrally located in a side surface of metal substrate layer, described Metal substrate layer form clod wash processing district, and the photovoltaic film surface relative to the region of both sides above and below photovoltaic film superficial layer Layer includes the photovoltaic film disjunction piece composition of the spaced distribution of length direction of the multistage along metal substrate layer, metal substrate layer Coiled flexural deformation Ying Liang areas are formed relative to the region between two sections of adjacent photovoltaic film disjunction pieces.
- 7. the photovoltaic polymetal crust material according to right 6, it is characterised in that：The width of clod wash processing district is at least 5cm, The width in coiled flexural deformation Ying Liang areas is at least 2mm.
- 8. the photovoltaic polymetal crust material according to right 1, it is characterised in that：Described hot melt adhesion oxidant layer include with Lower component：Include for the metal-to-metal adhesive coated on metal substrate layer side and for coated on photovoltaic film superficial layer side Photovoltaic film glue, the metal-to-metal adhesive and photovoltaic film glue are mutually adjacent under hot melt state and bonded after the cooling period；The metal-to-metal adhesive includes following components, in terms of mass fraction：Nylon type copolyamide 45-50 partsEthylene-vinyl acetate copolymer 15-20 partsTerpene resin 10-15 parts；C9 Petropols 10-15 parts；Microwax or paraffin 3-5 parts；Ditridecyl phthalate fourth 1-2 parts2,6 di tert butyl 4 methyl phenol 0.5-1.5 parts；The ethylhexyl of tert-butyl hydroperoxide-2-carbonic ester 0.5-1 parts；Aerosil 0-1 parts；The photovoltaic film glue includes following components, in terms of mass fraction：Ethylene-vinyl acetate copolymer 45-50 partsNylon type copolyamide 15-20 partsTerpene resin 10-15 parts；C9 Petropols 10-15 parts；Microwax or paraffin 5-6 parts；Ditridecyl phthalate fourth 1-2 parts2,6 di tert butyl 4 methyl phenol 0.5-1.5 parts；The ethylhexyl of tert-butyl hydroperoxide-2-carbonic ester 0.5-1 parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542015.4A CN107386540A (en) | 2017-07-05 | 2017-07-05 | A kind of photovoltaic polymetal crust material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542015.4A CN107386540A (en) | 2017-07-05 | 2017-07-05 | A kind of photovoltaic polymetal crust material |
Publications (1)
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|---|---|---|---|---|
| US6215060B1 (en) * | 1997-04-21 | 2001-04-10 | Canon Kabushiki Kaisha | Method for manufacturing a solar cell module |
| WO2001067523A1 (en) * | 2000-03-09 | 2001-09-13 | ISOVOLTA Österreichische Isolierstoffwerke Aktiengesellschaft | Method for producing a photovoltaic thin film module |
| CN102270667A (en) * | 2011-07-27 | 2011-12-07 | 保定天威英利新能源有限公司 | Component for increasing power generation efficiency of N-type monocrystalline silicon photovoltaic cell and manufacturing method thereof |
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