CN107359212A - Electrically conducting transparent substrate, its preparation method and solar cell - Google Patents
Electrically conducting transparent substrate, its preparation method and solar cell Download PDFInfo
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- CN107359212A CN107359212A CN201710384989.4A CN201710384989A CN107359212A CN 107359212 A CN107359212 A CN 107359212A CN 201710384989 A CN201710384989 A CN 201710384989A CN 107359212 A CN107359212 A CN 107359212A
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- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 11
- 238000000608 laser ablation Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 239000000463 material Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Surface Treatment Of Glass (AREA)
Abstract
This application provides a kind of electrically conducting transparent substrate, its preparation method and solar cell.The preparation method includes:Formed in transparent base and have reeded first surface;Conductive material is filled in a groove, forms conductive part in a groove, the surface of the bottom of the remote groove of conductive part and the part surface for not forming groove of first surface are in approximately the same plane.The preparation method of the application causes the upper surface of conductive part and transparent base in one plane, and then avoid and difference in height between transparent base and conductive part be present, and then it ensure that the planarization of whole device, and then it ensure that device has preferable performance, and this kind of method can set the thickness of conductive layer according to actual conditions, without the thickness of conductive layer is arranged into very little so that the electrically conducting transparent substrate has suitable series resistance.
Description
Technical field
The application is related to semiconductor applications, in particular to a kind of electrically conducting transparent substrate, its preparation method and solar energy
Battery.
Background technology
Electrically conducting transparent substrate, as the significant components of photoelectric device, it is directly connected to the photoelectric transformation efficiency or electricity of device
Light conversion efficiency.At present, the mode of generally use vacuum evaporation, vapour deposition or magnetron sputtering is coated with the glass substrate
Bright conductive material tin oxide, tin indium oxide (ITO) or fluorine-doped tin oxide (FTO), form conductive layer on the glass substrate, and then
Electrically conducting transparent substrate is formed, applied in the scenes such as photoelectric device or touch-screen.
In addition, field is researched and developed in the laboratory of field of photoelectric devices, especially film class photoelectric device, to each functional layer
Pattern require very harsh, the thickness and flatness of film are the parameter strictly controlled.
For the electrically conducting transparent substrate of ITO layer/FTO layers of patterning, as shown in figure 1, firstly, it is necessary in glass baseplate 1'
Upper setting conductive material, form conductive layer 2'(ITO layers or FTO layers);Then, as shown in Fig. 2 to the ITO layer on glass baseplate
Or FTO layers perform etching, the conductive part 3' of predetermined pattern is obtained, to build the light of photoelectric device and working region.With calcium titanium
, can be on 15*15mm ito glass base material exemplified by ore deposit solar cell, it is 15 to etch and leave a length, width 2mm
Conductive strips, or length and square that width is 4mm (thickness is identical with the thickness of corresponding conductive layer).
So after patterned process, it may appear that the difference in height between ITO layer or FTO layers and glass baseplate, subsequently exist
When preparing remaining functional layer, this difference in height influences whether the pattern and planarization of whole layer, is prepared in addition in follow-up device
During, it is necessary to carry out surface spin coating in this plane (or as working face), the presence of difference in height, influence the process of spin coating,
The out-of-flatness of spin-coated layer can be caused.The dislocation of layer and layer is resulted even in, ultimately results in device defects or failure.For example, most
The conductive layer of later layer is in a horizontal plane with ITO layer or FTO layers so that whole device is in a short circuit or connect
The state of nearly short circuit.
Therefore, the level height of ITO pattern part is reduced, is an important process.Reduce the conduction of sputtering or deposition
Thickness degree is a method, and still, too small conductive layer thickness can cause the increase of the square resistance of device, so as to increase device
Series resistance increase, and then influence free charge (or exciton) collection, so as to influence the efficiency of battery.
Therefore, need a kind of difference in height that can reduce conductive layer and glass baseplate badly and to ensure that device has simultaneously less
The method of series resistance.
The content of the invention
The main purpose of the application is to provide a kind of electrically conducting transparent substrate, its preparation method and solar cell, with solution
Ensure that device has less series resistance while the difference in height that conductive layer and substrate of glass can not certainly be reduced in the prior art
The problem of.
To achieve these goals, according to the one side of the application, there is provided a kind of making side of electrically conducting transparent substrate
Method, the preparation method include:Formed in transparent base and have reeded first surface;Conduction material is filled in above-mentioned groove
Material, conductive part, surface and the above-mentioned first surface of the bottom of the remote above-mentioned groove of above-mentioned conductive part are formed in above-mentioned groove
The part surface for not forming above-mentioned groove in approximately the same plane.
Further, conductive material is filled in above-mentioned groove, forming the process of conductive part includes:In above-mentioned transparent base
The first surface with above-mentioned groove on conductive material is set;Above-mentioned the of above-mentioned groove both sides is removed using flatening process
One surface above-mentioned conductive material in the plane, to form above-mentioned conductive part in above-mentioned groove.
Further, above-mentioned groove is formed using laser ablation method or wet etching method.
Further, above-mentioned flatening process includes laser ablation and/or chemical etching.
Further, above-mentioned transparent base is glass baseplate, and preferably above-mentioned conductive material is SnO2, ITO or FTO.
According to the another aspect of the application, there is provided a kind of electrically conducting transparent substrate, the electrically conducting transparent substrate include:Transparent base
Material, including the reeded first surface of tool;Conductive part, it is arranged in above-mentioned groove, and the remote above-mentioned groove of above-mentioned conductive part
Bottom surface and above-mentioned first surface the surface in addition to above-mentioned groove in approximately the same plane.
Further, above-mentioned transparent base is glass baseplate.
Further, above-mentioned conductive part is SnO2Conductive part, ITO conductive parts or FTO conductive parts.
Further, the thickness of above-mentioned transparent base is between 1~3mm, the thickness of preferably above-mentioned conductive part 50~
Between 1000nm.
The another further aspect of the application, there is provided a kind of solar cell, the solar cell include electrically conducting transparent substrate, should
Electrically conducting transparent substrate is any above-mentioned electrically conducting transparent substrate.
Using the technical scheme of the application, a groove is initially formed over the transparent substrate, and then filling is conductive in a groove
Material, conductive part is formed, can so cause the upper surface of conductive part and transparent base in one plane, and then avoid
Difference in height be present between bright base material and conductive part, and then ensure that the planarization of whole device, so ensure that device have compared with
Good performance, and this kind of method can set the thickness of conductive layer according to actual conditions, without the thickness of conductive layer is arranged to
Very little so that the electrically conducting transparent substrate has suitable series resistance.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its illustrate be used for explain the application, do not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation after the conductive layer of setting on the glass substrate of the prior art;
Fig. 2 shows the structural representation for being performed etching to Fig. 1 conductive layer and forming conductive part;
The structural representation formed in transparent base after groove that a kind of embodiment of Fig. 3 the application provides;
Fig. 4 shows the structural representation filled in Fig. 3 groove and formed after conductive material;And
Fig. 5 shows the structural representation to forming conductive part after the conductive layer planarization in Fig. 4.
Wherein, above-mentioned accompanying drawing marks including the following drawings:
1', glass baseplate;2', conductive layer;3', conductive part;1st, transparent base;2nd, groove;3rd, conductive part;03rd, conduction material
Material.
Embodiment
It is noted that described further below is all exemplary, it is intended to provides further instruction to the application.It is unless another
Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
As background technology is introduced, electrically conducting transparent substrate of the prior art, conductive layer and glass base can not be reduced
Ensure that device has less series resistance while the difference in height at bottom, in order to solve technical problem as above, the application proposes
A kind of electrically conducting transparent substrate, its preparation method and solar cell.
In a kind of typical embodiment of the application, there is provided a kind of preparation method of electrically conducting transparent substrate, the making
Method includes:First, the first surface with groove 2 is formed in transparent base 1, as shown in Figure 3;Secondly, in above-mentioned groove 2
Middle filling conductive material 03, as shown in figure 4, conductive part is formed in above-mentioned groove 2, the remote above-mentioned groove 2 of above-mentioned conductive part 3
Bottom surface and above-mentioned first surface the part surface for not forming above-mentioned groove in approximately the same plane, as shown in Figure 5.
In the above-mentioned preparation method of the application, a groove is initially formed over the transparent substrate, and then filling is led in a groove
Electric material, conductive part is formed, can so cause the upper surface of conductive part and transparent base in one plane, and then avoid
Difference in height between transparent base and conductive part be present, and then ensure that the planarization of whole device, it is preferable to ensure that device has
Performance, and this kind of method can set the thickness of conductive layer according to actual conditions, without the thickness of conductive layer is arranged to very
It is small so that the electrically conducting transparent substrate has suitable series resistance.
In a kind of embodiment of the application, conductive material is filled in above-mentioned groove, forming the process of conductive part includes:Such as
Shown in Fig. 4, conductive material 03 is set on the first surface with above-mentioned groove of above-mentioned transparent base;Using flatening process
Remove the above-mentioned first surface of above-mentioned groove both sides above-mentioned conductive material in the plane, to form Fig. 5 in above-mentioned groove
Shown above-mentioned conductive part.Groove is not provided with using what the technique of planarization can be further ensured that conductive part and transparent base
Part surface in approximately the same plane, and then the planarization of the device using the electrically conducting transparent substrate is ensure that, so as to ensure
These devices have a good performance.
In order to more efficient, quick and accurately form above-mentioned groove, in a kind of embodiment of the application, using laser incising
Erosion method or wet etching method form above-mentioned groove.
When a wet etch is used, can etch to form groove using hydrofluoric acid solution, still, in view of the corrosion of hydrofluoric acid
Property is stronger, needs significant care during operation.
Certainly, those skilled in the art can also be formed above-mentioned for security consideration using above-mentioned laser ablation method
Groove.
In addition, those skilled in the art can also form above-mentioned groove using other etching technics of the prior art,
It is not limited to above-mentioned two methods, such as can root with using plasma etching method etc., those skilled in the art
Suitable method is selected to form above-mentioned groove according to actual conditions.
In a kind of embodiment of the application, above-mentioned transparent base is glass baseplate.Glass baseplate cost is low, and materials side
Just, the cost and producing efficiency of electrically conducting transparent substrate can be reduced.
Certainly, however it is not limited to which above-mentioned glass baseplate, those skilled in the art can also select other according to actual conditions
Suitable transparent base material, such as PET, PMMA or PE of the prior art etc. can be used to be used as transparent base.
The conductive material of the application can be any light transmission rate of the prior art it is high and it is conductive can material,
Those skilled in the art can form the above-mentioned conductive part of the application according to the suitable conductive material of actual conditions selection.
In order to be further ensured that the transparency of electrically conducting transparent substrate and electric conductivity, in a kind of embodiment of the application,
Above-mentioned conductive material is SnO2, ITO or FTO.
In the typical embodiment of another kind of the application, there is provided a kind of electrically conducting transparent substrate, as shown in figure 5, this is saturating
Bright conductive substrates include transparent base 1 and conductive part 3, and transparent base 1 includes the first surface with groove 2;Conductive part 3 is set
In above-mentioned groove 2, and the surface of the bottom of the remote above-mentioned groove 2 of above-mentioned conductive part 3 and removing for above-mentioned first surface are above-mentioned
Surface outside groove 2 is in approximately the same plane.
In the electrically conducting transparent substrate of the application, outside the surface of remote bottom portion of groove of conductive part and the groove of transparent base
Part first surface in approximately the same plane, so allowing for the electrically conducting transparent substrate has even curface, when this is transparent
When conductive substrates are applied in other devices, the system of device will not be influenceed due to the difference in height between conductive part and transparent base
The performance of the structure for the device for make technique, ultimately forming and the device ultimately formed, it ensure that using the electrically conducting transparent substrate
Device there is good planarization and good performance.
The glass baseplate of the application can be the transparent base of any insulation of the prior art, such as can be
PET transparent bases, PMMA transparent bases or PE transparent bases, it is suitable that those skilled in the art can select according to actual conditions
Transparent base.
In order to reduce the cost of electrically conducting transparent substrate, and convenient draw materials then improves the producing efficiency of device, the application
A kind of embodiment in, above-mentioned transparent base is glass baseplate.Glass baseplate cost is low, and convenient material drawing.
In another embodiment of the application, above-mentioned conductive part is SnO2Conductive part, ITO conductive parts or FTO conductive parts.This
Two kinds of conductive parts may further ensure that the transparency and electric conductivity of electrically conducting transparent substrate.
Certainly, however it is not limited to which two kinds of above-mentioned conductive parts, those skilled in the art can select existing according to actual conditions
Any light transmission rate in technology it is high and it is conductive can material form the above-mentioned conductive part of the application.
In order to be further ensured that electrically conducting transparent substrate has good insulating properties and preferable light transmittance, also, conveniently
The making of device, in a kind of embodiment of the application, the thickness of above-mentioned transparent base 1 is between 1~3mm.
Certainly, the thickness of the transparent base of the application is not limited to above-mentioned scope, and those skilled in the art can basis
Actual conditions select suitable thickness outside the scope.
In the another embodiment of the application, the thickness of above-mentioned conductive part 3 can so enter one between 50~1000nm
Step ensures that the electrically conducting transparent substrate ensures with preferable electric conductivity and simultaneously it with preferable photopermeability energy, the application
The thickness of middle conductive part is the height equal to groove.
In the typical embodiment of another of the application, there is provided a kind of solar cell, the solar cell include
Electrically conducting transparent substrate, the electrically conducting transparent substrate are any one above-mentioned electrically conducting transparent substrate.
The solar cell is because including above-mentioned electrically conducting transparent substrate, the electrically conducting transparent substrate will not be due to difference in height
Problem influences the making of subsequent device so that the producing efficiency of device is higher, and the electrically conducting transparent substrate causes the solar-electricity
Pond has good planarization, and has good performance.
In order that the technical scheme of the application can clearly be understood by obtaining those skilled in the art, below with reference to tool
The embodiment of body illustrates the technical scheme of the application.
Embodiment 1
The manufacturing process of transparent substrates includes:
The reeded first surface of tool is formed in transparent base using laser ablation method, wherein, transparent base is glass
Base material, thickness 1mm, the height of groove is 100nm.
ITO is deposited in above-mentioned groove using magnetically controlled sputter method, and groove is removed by chemical mechanical milling tech
Conductive material on the first surface of both sides, and then conductive part is formed in above-mentioned groove, above-mentioned conductive part it is remote above-mentioned recessed
The surface of the bottom of groove and the surface for not forming above-mentioned groove of above-mentioned first surface are in approximately the same plane.
By electrically conducting transparent substrate application in solar cells, i.e., the 50nm TiO successively in the electrically conducting transparent substrate2
Electron transfer layer, 250nm perovskite active layer, 40nm Spiro-OMeTAD hole transmission layers and 400nm metal Au electricity
Pole, and ensure that each Rotating fields thickness is homogeneous, pattern is good, and each layer contact is good.
Embodiment 2
Difference with embodiment 1 is:The thickness of glass baseplate is 3mm, and the height of conductive part is 50nm.
Embodiment 3
Difference with embodiment 1 is:The thickness of glass baseplate is 2mm, and the height of conductive part is 400nm.
Embodiment 4
Difference with embodiment 1 is:The thickness of glass baseplate is 4mm.
Embodiment 5
Difference with embodiment 1 is:The height of conductive part is 30nm.
Comparative example 1
Difference with embodiment 1 is that the shape of the electrically conducting transparent substrate in the solar cell is as shown in Figure 2, i.e. leads
Electric portion is arranged on the surface of transparent base.
Comparative example 2
Difference with embodiment 2 is that the shape of the electrically conducting transparent substrate in the solar cell is as shown in Figure 2, i.e. leads
Electric portion is arranged on the surface of transparent base.
Comparative example 3
Difference with embodiment 3 is that the shape of the electrically conducting transparent substrate in the solar cell is as shown in Figure 2, i.e. leads
Electric portion is arranged on the surface of transparent base.
Comparative example 4
Difference with embodiment 1 is that the shape of the electrically conducting transparent substrate in the solar cell is as shown in Figure 2, i.e. leads
Electric portion is arranged on the surface of transparent base.
Using 3A standard AM1.5 solar simulators, IV tests are carried out to the solar cell in embodiment and comparative example,
Electricity conversion is obtained, specific test result is shown in Table 1.
Table 1
The planarization of device not only may insure using the electrically conducting transparent substrate of the application, also, by above-described embodiment with
The comparative result of comparative example is it was unexpectedly observed that the photoelectric conversion that solar cell can also be improved using the electrically conducting transparent substrate is imitated
Rate so that device has better performance.In comparative example 3, because conductive part is thicker, cause the dislocation of layer and layer than more serious,
And last Au electrodes have part in approximately the same plane with ITO conductive layer, so that short circuit occurs for device, fails.
Compared with Example 1, the glass baseplate of embodiment 4 is blocked up so that the electricity conversion of device is relatively low, embodiment 5
Conductive part is relatively thin so that the electricity conversion of device is relatively low.
As can be seen from the above description, the application the above embodiments realize following technique effect:
1), in the above-mentioned preparation method of the application, a groove is initially formed over the transparent substrate, is then filled in a groove
Conductive material, conductive part is formed, can so cause the upper surface of conductive part and transparent base in one plane, and then avoid
Difference in height between transparent base and conductive part be present, and then ensure that the planarization of whole device, ensure that device have compared with
Good performance, and this kind of method can set the thickness of conductive layer according to actual conditions, without the thickness of conductive layer is arranged to
Very little so that the electrically conducting transparent substrate has suitable series resistance.
2), in the electrically conducting transparent substrate of the application, the surface of the remote bottom portion of groove of conductive part and the place of transparent base are recessed
For part first surface outside groove in approximately the same plane, so allowing for the electrically conducting transparent substrate has even curface, when
When the electrically conducting transparent substrate is applied in other devices, device will not be influenceed due to the difference in height between conductive part and transparent base
The performance of the manufacture craft of part, the structure of the device ultimately formed and the device ultimately formed, it ensure that and transparent led using this
The device of electric substrate has good planarization and good performance.
3), the solar cell of the application is due to including above-mentioned electrically conducting transparent substrate, and the electrically conducting transparent substrate will not be by
The making of subsequent device is influenceed in the problem of difference in height so that the producing efficiency of device is higher, and the electrically conducting transparent substrate causes
The solar cell has good planarization, and has good performance.
The preferred embodiment of the application is the foregoing is only, is not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (10)
1. a kind of preparation method of electrically conducting transparent substrate, it is characterised in that the preparation method includes:
Formed in transparent base and have reeded first surface;And
Conductive material is filled in the groove, conductive part, the remote groove of the conductive part are formed in the groove
Bottom surface and the first surface the part surface for not forming the groove in approximately the same plane.
2. preparation method according to claim 1, it is characterised in that conductive material is filled in the groove, formation is led
The process in electric portion includes:
Conductive material is set on the first surface with the groove of the transparent base;And
Removed using flatening process the first surface of the groove both sides the conductive material in the plane, with
The conductive part is formed in the groove.
3. preparation method according to claim 1, it is characterised in that institute is formed using laser ablation method or wet etching method
State groove.
4. preparation method according to claim 2, it is characterised in that the flatening process include laser ablation and/or
Chemical etching.
5. preparation method according to claim 1, it is characterised in that the transparent base is glass baseplate, preferably described
Conductive material is SnO2, ITO or FTO.
6. a kind of electrically conducting transparent substrate, it is characterised in that the electrically conducting transparent substrate includes:
Transparent base (1), including the first surface with groove (2);And
Conductive part (3), it is arranged in the groove (2), and the table of the bottom of the remote groove (2) of the conductive part (3)
Face and the surface in addition to the groove (2) of the first surface are in approximately the same plane.
7. electrically conducting transparent substrate according to claim 6, it is characterised in that the transparent base (1) is glass baseplate.
8. electrically conducting transparent substrate according to claim 6, it is characterised in that the conductive part (3) is SnO2Conductive part, ITO
Conductive part or FTO conductive parts.
9. electrically conducting transparent substrate according to claim 6, it is characterised in that the thickness of the transparent base (1) 1~
Between 3mm, the thickness of preferably described conductive part (3) is between 50~1000nm.
10. a kind of solar cell, including electrically conducting transparent substrate, it is characterised in that the electrically conducting transparent substrate is claim 6
To the electrically conducting transparent substrate described in any one of 9.
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