CN107344328B - Polishing pad, forming method thereof and polishing monitoring method - Google Patents
Polishing pad, forming method thereof and polishing monitoring method Download PDFInfo
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- CN107344328B CN107344328B CN201610297881.7A CN201610297881A CN107344328B CN 107344328 B CN107344328 B CN 107344328B CN 201610297881 A CN201610297881 A CN 201610297881A CN 107344328 B CN107344328 B CN 107344328B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Abstract
A polishing pad, a forming method thereof and a polishing monitoring method are provided, wherein the polishing pad comprises: the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground; a barrier layer embedded within the polishing layer, the barrier layer being spaced from the fourth surface by a distance greater than zero, the barrier layer being adapted to signal replacement of the polishing pad. Since the polishing pad has the barrier layer, the barrier layer is suitable for giving a signal for replacing the polishing pad, so that the effective utilization rate of the polishing pad is maximized.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a polishing pad, a forming method thereof and a polishing monitoring method.
Background
Chemical Mechanical Polishing (CMP) is an important process in the manufacturing process of semiconductor devices, and is performed by a CMP machine, and is mainly used for planarization of the wafer surface. Polishing pads are one of the important tools in chemical mechanical polishing. When the polishing pad is used, it needs to be adhered to a polishing platen of a chemical mechanical polishing machine, and then the polishing head is pressed against a wafer to polish the wafer on the polishing pad.
During polishing, the polishing pad is worn. As the degree of wear of the polishing pad increases, the polishing rate decreases, and thus the polishing pad needs to be frequently replaced to maintain the stability of the polishing rate. Therefore, it is necessary to monitor the wear of the polishing pad, and the monitored signal is used to determine whether the polishing pad needs to be replaced.
However, the prior art monitoring of the wear level of the polishing pad results in a lower effective utilization of the polishing pad.
Disclosure of Invention
The invention provides a grinding pad, a forming method thereof and a grinding monitoring method, which can maximize the effective utilization rate of the grinding pad.
To solve the above problems, the present invention provides a polishing pad comprising: the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground; a barrier layer embedded within the polishing layer, the barrier layer being spaced from the fourth surface by a distance greater than zero, the barrier layer being adapted to signal replacement of the polishing pad.
Optionally, the friction coefficient of the barrier layer relative to the surface to be ground is greater than the friction coefficient of the grinding layer relative to the surface to be ground; or the friction coefficient of the barrier layer relative to the surface to be ground is smaller than that of the grinding layer relative to the surface to be ground; or the reflectivity of the barrier layer is greater than that of the grinding layer; or the reflectivity of the barrier layer is less than that of the grinding layer.
Optionally, the hardness of the barrier layer is less than the hardness of the abrasive layer.
Optionally, the material of the barrier layer is polyoxymethylene.
Optionally, a minimum distance is provided in the distance between the surface of the barrier layer and the fourth surface, and the minimum distance is 0.8um to 1 mm.
Optionally, the polishing layer has grooves therein, and the grooves are distributed between the barrier layers.
Optionally, the distance between the bottom surface and the fourth surface of the groove is greater than the minimum distance.
Optionally, the abrasive layer is composed of a polyurethane resin.
Optionally, the polishing layer has a plurality of holes therein.
Optionally, the substrate layer is provided with a first surface and a second surface which are opposite, and the second surface is contacted with the third surface.
Optionally, the adhesive layer is further included, and the adhesive layer is in contact with the first surface.
The invention also provides a forming method of the grinding pad, which comprises the following steps: forming a grinding layer, wherein the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground; forming a barrier layer during the forming of the abrasive layer, the barrier layer being embedded in the abrasive layer, the barrier layer being at a distance from the fourth surface greater than zero, the barrier layer being adapted to signal a replacement of the abrasive pad.
Optionally, the process for forming the polishing layer and the barrier layer includes: providing a substrate layer; providing a barrier material layer having a plurality of discrete openings therein; placing a layer of barrier material on the substrate layer with the opening facing the substrate layer; after the barrier material layer is arranged on the substrate layer, a second grinding material layer is formed in the opening; removing the blocking material layer higher than the top surface of the second grinding material layer to form a blocking layer; and forming a third grinding material layer on the top surfaces of the second grinding material layer and the barrier layer, wherein the third grinding material layer and the second grinding material layer form a grinding layer, and the fourth surface corresponds to the top surface of the third grinding material layer.
Optionally, the method further includes: forming a first abrasive material layer on the substrate layer; placing a barrier material layer on the base layer and the first abrasive material layer, the opening facing the base layer and the first abrasive material layer; the first polishing material layer, the second polishing material layer and the third polishing material layer constitute a polishing layer.
Optionally, the method further includes: and carrying out surface treatment on the grinding layer to form a plurality of holes in the grinding layer.
Optionally, the method further includes: grooves are formed in the polishing layer, the grooves being located between the barrier layers.
Optionally, the friction coefficient of the barrier layer relative to the surface to be ground is greater than the friction coefficient of the grinding layer relative to the surface to be ground; or the friction coefficient of the barrier layer relative to the surface to be ground is smaller than that of the grinding layer relative to the surface to be ground; or the reflectivity of the barrier layer is greater than that of the grinding layer; or the reflectivity of the barrier layer is less than that of the grinding layer.
The invention also provides a method for monitoring the grinding by adopting the grinding pad, which comprises the following steps: the method comprises the following steps of grinding by adopting a grinding pad, wherein the grinding process comprises a first grinding stage and a second grinding stage which are sequentially carried out, the barrier layer is not exposed in the first grinding stage, and the barrier layer is exposed in the second grinding stage; acquiring characteristic information of the surface of the grinding pad, wherein the characteristic information is suitable for judging whether the grinding process is in a first grinding stage or a second grinding stage; when the variation of the characteristic information is larger than the threshold value, judging that the grinding process enters a second grinding stage from the first grinding stage; after the first polishing stage enters the second polishing stage, polishing is stopped and the polishing pad is replaced.
Optionally, the method for acquiring the feature information includes: the friction coefficient of the surface of the polishing pad is obtained.
Optionally, the method for acquiring the feature information includes: the reflectance of the surface of the polishing pad is obtained.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the invention provides a polishing pad comprising a barrier layer embedded within a polishing layer, the barrier layer being adapted to signal replacement of the polishing pad. Because the characteristic information of the barrier layer and the characteristic information of the grinding layer have difference, the characteristic information of the surface of the grinding pad can be obviously changed when the barrier layer is exposed in the grinding process by using the grinding pad, so that whether the barrier layer is exposed in the grinding process can be identified according to the variation of the characteristic information of the surface of the grinding pad, and the loss degree of the grinding pad can be judged. If the barrier layer is exposed in the grinding process and the loss limit of the grinding pad is reached, the grinding pad needs to be replaced. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
The invention provides a method for forming a grinding pad, which forms a grinding layer and a barrier layer embedded in the grinding layer, wherein the barrier layer is suitable for giving a signal for replacing the grinding pad. Because the characteristic information of the barrier layer and the characteristic information of the grinding layer have difference, the characteristic information of the surface of the grinding pad can be obviously changed when the barrier layer is exposed in the grinding process by using the grinding pad, so that whether the barrier layer is exposed in the grinding process can be identified according to the variation of the characteristic information of the surface of the grinding pad, and the loss degree of the grinding pad can be judged. If the barrier layer is exposed in the grinding process and the loss limit of the grinding pad is reached, the grinding pad needs to be replaced. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
According to the grinding monitoring method provided by the invention, whether the barrier layer is exposed in the grinding process is judged according to the change amount of the characteristic information of the surface of the grinding pad, so that whether the grinding pad needs to be replaced is judged, the grinding pad is utilized to realize self control of the grinding process in the grinding monitoring process, and the service condition of the grinding pad can be accurately monitored. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
Drawings
FIG. 1 is a schematic diagram of an embodiment of a polishing pad;
fig. 2 to 10 are schematic structural views illustrating a polishing pad forming process according to an embodiment of the invention.
Detailed Description
As mentioned in the background, the polishing pad of the prior art has a low effective utilization.
In one embodiment, the degree of wear of the polishing pad is determined according to the following: (1) judging the wear degree of the polishing pad according to the service time of the polishing pad; (2) judging the loss degree of the grinding pad according to the number of the wafers ground by the grinding pad; (3) the degree of wear of the polishing pad is determined based on the time taken to wear the polishing pad and the number of wafers polished by the polishing pad.
Accordingly, the polishing pad, with reference to fig. 1, comprises: a bonding layer 100; a substrate layer 110 on the adhesive layer 100; and a polishing layer 120 on the substrate layer 110.
It was found that the reason why the effective utilization rate of the polishing pad in the above embodiment is low is:
monitoring the wear of the polishing pad depends mainly on monitoring the usage time of the polishing pad, the number of wafers polished by the polishing pad, or the first arrival of the usage time of the polishing pad and the number of wafers polished by the polishing pad. The polishing parameters are different in different polishing processes, so that the polishing pad loss rates of the different polishing processes are different. Therefore, the wear of the polishing pad cannot be accurately reflected by the use time of the polishing pad and the number of wafers polished by the polishing pad, and the polishing pad may be insufficiently used or may be used beyond the use limit of the polishing pad. If the polishing pad is not used sufficiently, the polishing pad is wasted; if the use of the polishing pad exceeds the use limit of the polishing pad, damage to the polished wafer may result. Thereby making the effective utilization of the polishing pad low.
In addition, the monitoring of the wear level of the polishing pad is limited by the structure of the polishing pad, and the usage of the polishing pad cannot be effectively monitored by combining the characteristic information of the polishing pad itself. Specifically, in the polishing process using the polishing layer, the characteristic information of the polishing pad surface is substantially unchanged, and the degree of wear of the polishing layer cannot be identified from the characteristic information of the polishing pad surface. When the grinding layer is consumed, the substrate layer is exposed, the substrate layer can damage the corresponding ground wafer, and the grinding layer can be judged to be consumed after the wafer is damaged.
On the basis, the invention provides a method for forming a polishing pad, which comprises the following steps: forming a grinding layer, wherein the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground; forming a barrier layer during the forming of the abrasive layer, the barrier layer being embedded in the abrasive layer, the barrier layer being at a distance from the fourth surface greater than zero, the barrier layer being adapted to signal a replacement of the abrasive pad. Since the polishing pad has the barrier layer, the barrier layer is suitable for giving a signal for replacing the polishing pad, so that the effective utilization rate of the polishing pad is maximized.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 10 are schematic structural views illustrating a polishing pad forming process according to an embodiment of the invention.
Referring to fig. 2, a substrate layer 201 is provided.
The substrate layer 201 provides support for the subsequent formation of a polishing layer.
The substrate layer 201 has opposing first and second surfaces.
The material of the substrate layer 201 may be PET (polyethylene terephthalate).
In this embodiment, an adhesive layer 200 is further formed, and the adhesive layer 200 is in contact with the first surface.
The bonding layer 200 is adapted to adhere the polishing pad to the polishing platform.
Next, an abrasive layer having third and fourth opposite surfaces for abrading the surface to be abraded and a barrier layer embedded in the abrasive layer adapted to signal replacement of the abrasive pad are formed on the substrate layer 201.
The process of forming the polishing layer and the barrier layer is described in detail below.
Referring to fig. 3, a barrier material layer 210 is provided, the barrier material layer 210 having a plurality of discrete openings 211 therein.
The material of the barrier material layer 210 may be polyoxymethylene.
Since the barrier material layer 210 between the openings 211 subsequently constitutes a barrier layer, the shape of the openings 211 defines the shape of the subsequent barrier layer. In this embodiment, the cross-sectional shape of the opening 211 is illustrated as a rectangle. In other embodiments, the cross-sectional shape of the opening may be irregular.
Referring to fig. 4, a barrier material layer 210 is disposed on the substrate layer 201 with the opening 211 facing the substrate layer 201.
Specifically, barrier material layer 210 is disposed on a second surface of substrate layer 201, with opening 211 facing the second surface.
A layer of bonding material may be applied to a second surface of the substrate layer 201, and then a layer of barrier material 210 may be placed on the second surface of the substrate layer 201 such that the layer of barrier material 210 is secured to the substrate layer 201 such that the layer of barrier material 210 does not move relative to the substrate layer 201 during subsequent formation of the second layer of abrasive material 220.
During the subsequent formation of the second abrasive material layer 220, an external force may also be applied between the substrate layer 201 and the barrier material layer 210, so that the barrier material layer 210 does not move relative to the substrate layer 201.
Referring to fig. 5, after the barrier material layer 210 is disposed on the base layer 201, a second abrasive material layer 220 is formed in the opening 211 (refer to fig. 4).
The material of the second abrasive material layer 220 may be polyurethane resin.
The process of forming the second abrasive material layer 220 is a coating process, specifically, providing a second abrasive starting material, and heating the second abrasive starting material to melt the second abrasive starting material; injecting the melted second grinding initial material into the opening 211 to fill the opening 211; after the opening 211 is filled with the second polishing initiation material, the second polishing initiation material is cured; after the second polishing initiation material is cured, the second polishing initiation material outside the opening 211 is removed, thereby forming a second polishing material layer 220 in the opening 211.
After the melted second grinding initial material is injected into the opening 211, the second grinding initial material is sufficiently contacted with the surface of the substrate layer 201, so that the adhesion between the solidified second grinding initial material and the substrate layer 201 is strong.
Referring to fig. 6, after forming the second polishing material layer 220, the blocking material layer 210 (refer to fig. 5) higher than the top surface of the second polishing material layer 220 is removed to form a blocking layer 212.
The process of removing the barrier material layer 210 higher than the top surface of the second abrasive material layer 220 is a cutting process, or grinding the surfaces of the second abrasive material layer 220 and the barrier layer 212 after cutting the barrier material layer 210 higher than the top surface of the second abrasive material layer 220. The surfaces of the second abrasive material layer 220 and the barrier layer 212 are polished to make the surfaces of the second abrasive material layer 220 and the barrier layer 212 smooth, thereby facilitating the subsequent formation of a third abrasive material layer.
The material of the barrier layer 212 may be polyoxymethylene.
The barrier layer 212 is located in the second abrasive material layer 220.
Referring to fig. 7, a third abrasive material layer 230 is formed on the top surfaces of the second abrasive material layer 220 and the barrier layer 212, the third abrasive material layer 230 and the second abrasive material layer 220 constituting an abrasive layer, and the fourth surface corresponds to the top surface of the third abrasive material layer.
The material of the third abrasive material layer 230 may be polyurethane resin.
The process of forming the third abrasive material layer 230 may be a coating process.
In this embodiment, the method may further include: forming a first layer of abrasive material (not shown) on the substrate layer 201; placing a barrier material layer 210 on the base layer 201 and the first abrasive material layer, the opening 211 facing the base layer 201 and the first abrasive material layer; the first, second and third polishing material layers 220, 230 constitute a polishing layer.
Specifically, a first abrasive material layer is formed on the second surface of the substrate layer 201, and then the barrier material layer 210 is placed on the substrate layer 201 and the first abrasive material layer, with the opening 211 facing the first abrasive material layer and the substrate layer 201; after the third polishing material layer 230 is formed, the first polishing material layer, the second polishing material layer 220 and the third polishing material layer 230 constitute a polishing layer.
When the first polishing material layer is formed, after the melted second polishing starting material is injected into the opening 211, the second polishing starting material is in full contact with the surface of the first polishing material layer, so that the adhesion between the solidified second polishing starting material and the first polishing material layer is strong.
The abrasive layer has opposing third and fourth surfaces.
The third surface is in contact with the second surface.
The fourth surface corresponds to the top surface of the third polishing material layer 230, and the fourth surface is used for polishing the surface to be polished.
When the first grinding material layer is not formed, the third surface corresponds to the bottom surface of the second grinding material layer; when the first polishing material layer is formed, the third surface corresponds to the bottom surface of the first polishing material layer.
It should be noted that the friction coefficient of the barrier layer 212 with respect to the surface to be ground is greater than the friction coefficient of the grinding layer with respect to the surface to be ground; or the friction coefficient of the barrier layer 212 relative to the surface to be ground is smaller than that of the grinding layer; or the reflectivity of the barrier layer 212 is greater than that of the polishing layer; or the barrier layer 212 may have a reflectivity less than the reflectivity of the polishing layer.
The hardness of the barrier layer 212 is less than the hardness of the polishing layer so that when the polishing pad is used to polish until the barrier layer 212 is exposed, the barrier layer 212 does not damage the polished wafer.
The barrier layer 212 has a minimum distance in the distance between the surface and the fourth surface, the minimum distance being 0.8 um-1 mm. The meaning that the range of the minimum distance is selected to be 0.8 um-1 mm is as follows: if the minimum distance is too small, the usable thickness of the polishing layer is small; if the minimum distance is too large, a thick third polishing material layer 230 needs to be formed, and if the third polishing material layer 230 is thick, the time required for polishing by using the polishing pad increases, and as the usage time increases, a large amount of polishing byproducts easily accumulates, thereby causing scratches on the surface of the wafer to be polished.
After the polishing layer is formed, the method may further include: referring to fig. 8, the polishing layer is surface-treated to form a plurality of holes 231 therein.
The surface treatment method is a surface foaming process.
In the present embodiment, a plurality of holes 231 are formed in the third polishing material layer 230. In other embodiments, a plurality of holes may be formed in both the third abrasive material layer and the second abrasive material layer. When the first abrasive material layer is formed, holes may be formed in the third abrasive material layer 230, the second abrasive material layer 220, and the first abrasive material layer.
In other embodiments, the hole in the third polishing material layer may be formed at the same time as the third polishing material layer; forming a hole in the second grinding material layer at the same time of forming the second grinding material layer; the hole in the first polishing material layer is formed at the same time as the first polishing material layer.
The holes 231 function as: the grinding fluid is stored during grinding, and the grinding fluid particles are uniformly dispersed, and meanwhile, the grinding fluid can contain residues removed by grinding and failed grinding slurry.
The larger the holes 231, the more uniformly dispersed the particles in the slurry, the greater the ability to contain the residue removed by polishing and the failed slurry, but the larger the holes 231, the less uniform polishing pressure can be maintained, resulting in a reduced surface flatness of the polishing pad during polishing. Therefore, the size of the hole 231 is 100nm to 0.5 um.
In other embodiments, the hole 231 may not be formed.
After the polishing layer is formed, the method may further include: grooves are formed in the polishing layer between the barrier layers 212.
Referring to fig. 9, fig. 9 is a schematic view of the formation based on fig. 8, after the hole 231 is formed, a groove 240 is formed in the polishing layer, and the groove 240 is located between the barrier layers 212.
Referring to fig. 10, fig. 10 is a top view corresponding to fig. 9, and fig. 10 shows the distribution of grooves 240 in the polishing pad, wherein the grooves 240 are criss-cross. In other embodiments, other arrangements of the grooves 240 may be selected.
The function of the groove 240 is: the grinding fluid container is beneficial to containing more grinding fluid and discharging grinding residual liquid.
The process of forming the groove 240 may be a cutting process.
In the present embodiment, the groove 240 is formed in the third abrasive material layer 230 and a portion of the second abrasive material layer 220 such that a distance between a bottom surface and a fourth surface of the groove 240 is greater than the minimum distance. When the first abrasive material layer is formed, a groove may be formed in the third abrasive material layer 230, the second abrasive material layer 220, and a portion of the first abrasive material layer, at which time, a distance between a bottom surface and a fourth surface of the groove is greater than the minimum distance.
Since the distance between the bottom surface and the fourth surface of the groove 240 is greater than the minimum distance, the groove 240 can receive the polishing slurry and serve as a passage for discharging the polishing slurry from the beginning of polishing using the polishing pad until the barrier layer 212 is exposed.
In other embodiments, the distance between the bottom surface and the fourth surface of the groove 240 may be made smaller than or equal to the minimum distance.
In order to accommodate the application of some process endpoint detection techniques, a window 241 (see also fig. 9 and 10) may also be formed, the window 241 extending through the polishing layer, the substrate layer 201, and the bonding layer 200.
Specifically, a partial area of the polishing pad is cut away to form a window 241 with a suitable size, so that all laser light can be irradiated onto the surface of the wafer to be polished through the window 241.
The window 241 is typically opened near the center of the polishing pad, or the window 241 may be specifically positioned as desired.
In the present embodiment, the opening shape of the window 241 is exemplified as a circle. In other embodiments, the shape of the opening of the window may be rectangular or other shapes.
The size of the window 241 can be set according to the size of the transparent area for emitting laser light on the grinding platform.
Accordingly, the present invention further provides a polishing pad formed by the method for forming a polishing pad provided in the above embodiment, with reference to fig. 9, including: the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground; a barrier layer 212 embedded within the polishing layer, the barrier layer 212 being spaced from the fourth surface by a distance greater than zero, the barrier layer 212 being adapted to signal replacement of the polishing pad.
The friction coefficient of the barrier layer 212 relative to the surface to be ground is larger than that of the grinding layer; or the friction coefficient of the barrier layer 212 relative to the surface to be ground is smaller than that of the grinding layer; or the reflectivity of the barrier layer 212 is greater than that of the polishing layer; or the barrier layer 212 may have a reflectivity less than the reflectivity of the polishing layer.
The barrier layer 212 has a hardness less than the hardness of the abrasive layer.
The material of the barrier layer 212 is polyoxymethylene.
The barrier layer 212 has a minimum distance in the distance between the surface and the fourth surface, the minimum distance being 0.8 um-1 mm.
The polishing pad further comprises a substrate layer 201, wherein the substrate layer 201 is provided with a first surface and a second surface which are opposite, and the second surface is contacted with a third surface.
The polishing layer comprises a second polishing material layer 220 and a third polishing material layer 230 positioned on the surface of the second polishing material layer 220, wherein the second polishing material layer 220 is positioned between the substrate layer 201 and the third polishing material layer 230.
The abrasive layer may also include a first layer of abrasive material. When the polishing layer includes a first polishing material layer, the second polishing material layer is located between the first polishing material layer and a third polishing material layer, and the first polishing material layer is located between the matrix layer 201 and the second polishing material layer.
The fourth surface corresponds to the surface of the third polishing material layer 230 opposite to the substrate layer 201; the third surface corresponds to the surface of the first layer of polishing material opposite the host layer 201 or the surface of the second layer of polishing material 220 opposite the host layer 201.
The polishing layer is made of a polyurethane resin.
The barrier layer 212 is located in the second abrasive material layer 220.
The polishing layer also has grooves 240 therein, and the grooves 240 are distributed between the barrier layers 212.
In this embodiment, the distance between the bottom surface and the fourth surface of the groove 240 is greater than the minimum distance. In other embodiments, the distance from the bottom surface of the groove 240 to the fourth surface is less than or equal to the minimum distance.
In this embodiment, the polishing pad further comprises a bonding layer 200. The adhesive layer 200 is in contact with the first surface.
The polishing pad is further provided with a window 241, and the window 241 penetrates through the polishing layer, the substrate layer 201 and the bonding layer 200.
The polishing layer has a plurality of holes 231 therein.
Correspondingly, the invention further provides a method for monitoring polishing by using the polishing pad provided by the embodiment, which comprises the following steps: grinding by using a grinding pad, wherein the grinding process comprises a first grinding stage and a second grinding stage which are sequentially carried out, the barrier layer 212 is not exposed in the first grinding stage, and the barrier layer 212 is exposed in the second grinding stage; acquiring characteristic information of the surface of the grinding pad, wherein the characteristic information is suitable for judging whether the grinding process is in a first grinding stage or a second grinding stage; when the variation of the characteristic information is larger than the threshold value, judging that the grinding process enters a second grinding stage from the first grinding stage; after the first polishing stage enters the second polishing stage, polishing is stopped and the polishing pad is replaced.
The method for acquiring the characteristic information comprises the following steps: the coefficient of friction of the polishing pad surface or the reflectance of the polishing pad surface is obtained.
In conclusion, the invention has the following beneficial effects:
the invention provides a polishing pad comprising a barrier layer embedded within a polishing layer, the barrier layer being adapted to signal replacement of the polishing pad. Because the characteristic information of the barrier layer and the characteristic information of the grinding layer have difference, the characteristic information of the surface of the grinding pad can be obviously changed when the barrier layer is exposed in the grinding process by using the grinding pad, so that whether the barrier layer is exposed in the grinding process can be identified according to the variation of the characteristic information of the surface of the grinding pad, and the loss degree of the grinding pad can be judged. If the barrier layer is exposed in the grinding process and the loss limit of the grinding pad is reached, the grinding pad needs to be replaced. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
The invention provides a method for forming a grinding pad, which forms a grinding layer and a barrier layer embedded in the grinding layer, wherein the barrier layer is suitable for giving a signal for replacing the grinding pad. Because the characteristic information of the barrier layer and the characteristic information of the grinding layer have difference, the characteristic information of the surface of the grinding pad can be obviously changed when the barrier layer is exposed in the grinding process by using the grinding pad, so that whether the barrier layer is exposed in the grinding process can be identified according to the variation of the characteristic information of the surface of the grinding pad, and the loss degree of the grinding pad can be judged. If the barrier layer is exposed in the grinding process and the loss limit of the grinding pad is reached, the grinding pad needs to be replaced. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
According to the grinding monitoring method provided by the invention, whether the barrier layer is exposed in the grinding process is judged according to the change amount of the characteristic information of the surface of the grinding pad, so that whether the grinding pad needs to be replaced is judged, the grinding pad is utilized to realize self control of the grinding process in the grinding monitoring process, and the service condition of the grinding pad can be accurately monitored. The waste of the grinding pad caused by insufficient use of the grinding pad or the damage to the ground wafer caused by the use of the grinding pad exceeding the use limit is avoided; thereby maximizing the effective utilization rate of the polishing pad.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (4)
1. A method for forming a polishing pad, comprising:
forming a grinding layer, wherein the grinding layer is provided with a third surface and a fourth surface which are opposite, and the fourth surface is used for grinding the surface to be ground;
forming a barrier layer in the process of forming the grinding layer, wherein the barrier layer is embedded in the grinding layer, the distance between the barrier layer and the fourth surface is larger than zero, the friction coefficient of the barrier layer relative to the surface to be ground is larger or smaller than that of the grinding layer relative to the surface to be ground, or the reflectivity of the barrier layer is different from that of the grinding layer, the barrier layer is suitable for giving a signal for replacing the grinding pad according to the difference of the friction coefficients or the difference of the reflectivities between the barrier layer and the grinding layer, and the hardness of the barrier layer is smaller than that of the grinding layer;
the process for forming the grinding layer and the barrier layer comprises the following steps:
providing a substrate layer;
providing a barrier material layer having a plurality of discrete openings therein;
placing a layer of barrier material on the substrate layer with the opening facing the substrate layer;
after the barrier material layer is arranged on the substrate layer, a second grinding material layer is formed in the opening;
removing the blocking material layer higher than the top surface of the second grinding material layer to form a blocking layer;
and forming a third grinding material layer on the top surfaces of the second grinding material layer and the barrier layer, wherein the third grinding material layer and the second grinding material layer form a grinding layer, and the fourth surface corresponds to the top surface of the third grinding material layer.
2. The method of claim 1, further comprising: forming a first abrasive material layer on the substrate layer; placing a barrier material layer on the base layer and the first abrasive material layer, the opening facing the base layer and the first abrasive material layer; the first polishing material layer, the second polishing material layer and the third polishing material layer constitute a polishing layer.
3. The method of claim 1 or 2, further comprising: and carrying out surface treatment on the grinding layer to form a plurality of holes in the grinding layer.
4. The method of claim 1 or 2, further comprising: grooves are formed in the polishing layer, the grooves being located between the barrier layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610297881.7A CN107344328B (en) | 2016-05-06 | 2016-05-06 | Polishing pad, forming method thereof and polishing monitoring method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362105B1 (en) * | 1998-10-27 | 2002-03-26 | Micron Technology, Inc. | Method and apparatus for endpointing planarization of a microelectronic substrate |
| CN103094145A (en) * | 2011-11-07 | 2013-05-08 | 台湾积体电路制造股份有限公司 | End point detection in grinding |
| CN105500183A (en) * | 2015-11-26 | 2016-04-20 | 上海集成电路研发中心有限公司 | Grinding pad and service cycle detecting method thereof |
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| US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
| GB2345657B (en) * | 1999-01-13 | 2001-08-15 | United Microelectronics Corp | Lifetime self-indicated polishing pad |
| KR101383600B1 (en) * | 2010-03-11 | 2014-04-11 | 주식회사 엘지화학 | Apparatus and method for monitoring glass plate polishing state |
| CN106853610B (en) * | 2015-12-08 | 2019-11-01 | 中芯国际集成电路制造(北京)有限公司 | Polishing pad and its monitoring method and monitoring system |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6362105B1 (en) * | 1998-10-27 | 2002-03-26 | Micron Technology, Inc. | Method and apparatus for endpointing planarization of a microelectronic substrate |
| CN103094145A (en) * | 2011-11-07 | 2013-05-08 | 台湾积体电路制造股份有限公司 | End point detection in grinding |
| CN105500183A (en) * | 2015-11-26 | 2016-04-20 | 上海集成电路研发中心有限公司 | Grinding pad and service cycle detecting method thereof |
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