CN107340687A - Hard mask composition - Google Patents
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- CN107340687A CN107340687A CN201710220902.XA CN201710220902A CN107340687A CN 107340687 A CN107340687 A CN 107340687A CN 201710220902 A CN201710220902 A CN 201710220902A CN 107340687 A CN107340687 A CN 107340687A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C33/00—Unsaturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C33/26—Polyhydroxylic alcohols containing only six-membered aromatic rings as cyclic part
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
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- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention relates to hard mask composition, more specifically, the hard mask composition can form the lower membrane (hard mask) of excellent heat resistance by containing the compound and solvent of two or more tertiary alcohol base comprising intramolecular.
Description
Technical field
The present invention relates to hard mask composition.
Background technology
The industry such as microelectronics industry and microstructured article (for example, micromechanics, magnetic resistance (magnetoresist) magnetic head etc.)
In field, the lasting size for requiring to reduce planform.In addition, in microelectronics industry, following requirement be present：Reduce microelectronics
The size of equipment, more circuits are provided to specified die size.
In order to reduce shape size, effective photoetching technique is essential.
For typical photo-mask process, first, on subsurface material after painting erosion resistant agent, x ray exposure x is carried out, is formed
Resist layer.Then, resist layer is developed with developer solution and forms the resist layer of patterning, to being present in patterning
Resist layer opening portion in material be etched, pattern is transferred to subsurface material.After transfer terminates, with following mistake
Journey：Photonasty resist is exposed with patterned fashion, form the resist layer of patterning.Then, by making exposed resist
Layer contacts with arbitrary substance (typically water-based alkaline developer), so that image developing.Then, by being present in patterning
Resist layer opening portion in material be etched, pattern is transferred to subsurface material.After transfer terminates, residual is removed
Resist layer.
In order that the minimum reflectivity between resist layer and subsurface material, in most of process of above-mentioned photo-mask process
Use ARC (anti-refractive coating；ARC) resolution ratio is increased.But after patterning, will be anti-
In the process of anti-reflective coating layer etch, resist layer is also largely consumed, it is possible to needs to add pattern in subsequent
Change.
In other words, in the case of a part of lithographic images chemical industry sequence, used resist is sometimes for etching step
Sufficient tolerance without the degree for being enough to make predetermined pattern effectively be transferred to subsurface material.Therefore, for needing
The situation of the ultrathin membrane resist layer of resist material is thinly used, it is right in the case of the substrate for wanting etching process is thick
Specific etchant (etchant) is needed to use in the situation for requiring etch depth depth or for predetermined subsurface material
In situation etc., resist lower membrane has been used.
Resist lower membrane resist layer with can from the resist of patterning by transfer and the subsurface material that patterns
Between play the effect in intermediate layer, the resist lower membrane, which needs to be resistant to from the resist layer of patterning, to be received pattern, makes pattern
It is transferred to etching work procedure required during subsurface material.
In order to form such lower membrane, many materials have been attempted, but still have persistently required the improvement to lower floor's film composition.
In the past, it was difficult to be coated on substrate for forming the material of lower membrane, therefore utilizes and be for example chemically or physically deposited, be special
Different solvent or high temperature are burnt till, but they have the problem of cost is very big.Thus, in recent years, carry out on high temperature need not be implemented
Burn till using rotating coating come the research of lower floor's film composition that is coated with.
In addition, carry out the research on following lower floor's film compositions：Make in the resist layer that can will be formed in top
While being easily selectively etched for mask, particularly in the case where lower floor is metal level, for lower membrane is made
Make etching work procedure required during lower pattern that there is tolerance for mask.
KR published patent the 10-2010-0082844th discloses the skill that composition is formed on resist lower membrane
Art.
Prior art literature
Patent document
KR published patent the 10-2010-0082844th
The content of the invention
Problem to be solved
It is an object of the present invention to provide the hard mask for the resist lower membrane (hard mask) that can form excellent heat resistance
Use composition.
The method for solving problem
1. a kind of hard mask compositions, it includes the compound and solvent that intramolecular contains two or more tertiary alcohol base.
2. the hard mask compositions as described in above-mentioned 1, above-claimed cpd is selected from 1~chemical formula of following chemical formula, 3 table
The compound group shown at least one of group：
[chemical formula 1]
(in formula, n is 1~10,
R1And R2The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar1The arlydene of carbon number 6~20 is each independently,
Ar2And Ar3The aryl of carbon number 6~20 is each independently,
Above-mentioned Ar1、Ar2、Ar3、R1And R2Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, on
State-RaFor the aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20)
[chemical formula 2]
(in formula, n is 2~10,
R3The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar4The aryl for the carbon number 6~20 that can be substituted for n hydrogen atom,
Ar5The aryl of carbon number 6~20 is each independently,
Above-mentioned R3、Ar4And Ar5Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, above-mentioned-RaFor
The aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20)
[chemical formula 3]
(in formula, R4And R5The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar6And Ar7The arlydene of carbon number 6~20 is each independently,
Above-mentioned R4、R5、Ar6And Ar7Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, above-mentioned-
RaFor the aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20.
3. the hard mask compositions as described in above-mentioned 2, above-mentioned Ar1、Ar6And Ar7Be each independently phenylene, naphthalene-diyl,
Anthracene diyl, stilbene diyl or pyrene diyl.
4. the hard mask compositions as described in above-mentioned 2, above-mentioned Ar2、Ar3And Ar5It is each independently phenyl, naphthyl, anthracene
Base, stilbene radicals or pyrenyl.
5. the hard mask compositions as described in above-mentioned 2, above-mentioned Ar4For phenyl, naphthyl, anthryl, stilbene radicals or pyrenyl.
6. the hard mask compositions as described in above-mentioned 2, above-mentioned R1~R5Be each independently methyl, vinyl, pi-allyl or
Phenyl.
7. the hard mask compositions as described in above-mentioned 1, in composition total weight, the weight of above-claimed cpd 10~70 is included
Measure %, the weight % of above-mentioned solvent 30~90.
8. the hard mask compositions as described in above-mentioned 1, it further includes at least one of crosslinking agent and catalyst.
Invention effect
The hard mask of the present invention is excessively carried out with composition by improving bridging property and suppressing cross-linking reaction, can be formed resistance to
Hot excellent resist lower membrane macromolecule.
In addition, hard mask composition according to an embodiment of the invention is by improving the carbon content in compound
(C%) the excellent resist lower membrane macromolecule of etching selectivity can, be formed.
Embodiment
An embodiment of the invention is related to a kind of hard mask composition, and it contains two or more uncle comprising intramolecular
The compound and solvent of alcohol radical, so as to form the resist lower membrane (hard mask) of excellent heat resistance.
Hereinafter, the embodiment of the present invention is illustrated.But this is simply illustrated, and the present invention is not limited thereto.
In the present invention, when the isomers of compound represented by chemical formula or resin be present, represented by corresponding formula
Compound or resin mean that its isomers is also included within interior representative chemical formula.
<Hard mask composition>
The hard mask composition of the present invention includes the compound (A) and solvent that intramolecular contains two or more tertiary alcohol base
(B)。
Compound (A)
The present invention is by that comprising above-claimed cpd (A), can make to be covered firmly by what hard mask composition of the invention was formed
Mould shows excellent heat resistance.
Specifically, compound (A) contains two or more tertiary alcohol base, such tertiary alcohol base and secondary alcohol groups or primary in intramolecular
Alcohol radical is compared, and Sn1 reactions easily occurs, therefore when manufacturing hard mask with composition by hard mask, can improve bridging property, energy
Enough make excellent heat resistance.In addition, the tertiary alcohol suppress cross-linking reaction excessive progress, it is also insensitive to oxidation reaction, thus for
In the case of manufacturing hard mask, the heat resistance of manufactured hard mask is improved.
Moreover, the present invention is by comprising above-claimed cpd (A), due to the reasons such as carbon content (C%) height in compound, energy
Enough elching resistants (etching selectivity) improved to halogen gas.
From the aspect of such, such as above-claimed cpd (A) can be for selected from by the institute of 1~chemical formula of following chemical formula 3
The compound group of expression at least one of group：
[chemical formula 1]
(in formula, n is 1~10,
R1And R2The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar1The arlydene of carbon number 6~20 is each independently,
Ar2And Ar3The aryl of carbon number 6~20 is each independently,
Above-mentioned Ar1、Ar2、Ar3、R1And R2Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, on
State-RaFor the aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20)
[chemical formula 2]
(in formula, n is 2~10,
R3The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar4The aryl for the carbon number 6~20 that can be substituted for n hydrogen atom,
Ar5The aryl of carbon number 6~20 is each independently,
Above-mentioned R3、Ar4And Ar5Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, above-mentioned-RaFor
The aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20)
[chemical formula 3]
(in formula, R4And R5The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar6And Ar7The arlydene of carbon number 6~20 is each independently,
Above-mentioned R4、R5、Ar6And Ar7Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with, above-mentioned-
RaFor the aliphatic alkyl of carbon number 1~6, above-mentioned-AraFor the aryl of carbon number 6~20).
In formula, " independently of one another " even mean in a compound by same-sign represent substituent,
Can also be other substituents if its position is different.For example, in chemical formula 1, if R2Or Ar1In a compound
It is present in different repeat units, then can is substituent different from each other in the range of above-mentioned record.
As previously described, because Ar1~Ar7With aromatic series, it can further improve bridging property, and improve compound
Middle carbon content (C%), so as to form the excellent resist lower membrane macromolecule of etching selectivity.
Can be the alkane of carbon number 1~6 as the preference of the aliphatic alkyl of carbon number 1~6 in the present invention
Base, vinyl or pi-allyl.
In the present invention, preferably Ar1~Ar7And R1~R5Can be as follows.
For example, Ar1、Ar6And Ar7Phenylene, naphthalene-diyl, anthracene diyl, stilbene diyl or pyrene diyl can be each independently,
Ar2、Ar3And Ar5Phenyl, naphthyl, anthryl, stilbene radicals or pyrenyl can be each independently, in addition,
Ar4Can be phenyl, naphthyl, anthryl, stilbene radicals or pyrenyl.
In addition, in the present invention, preferably R1~R5Methyl, vinyl, pi-allyl or phenyl can be each independently, more preferably
Can be vinyl, pi-allyl or phenyl.
In R according to an embodiment of the invention1~R5In the case of being each independently vinyl or pi-allyl, due to
Compound (A) has cross-linking functional group, therefore can further improve heat resistance.
In addition, in R according to an embodiment of the invention1~R5In the case of comprising phenyl, due to significantly improving compound
Middle carbon content (C%), the resist lower membrane macromolecule for further improving etching selectivity can be formed.
It is highly preferred that in hard mask compositions according to an embodiment of the invention, compound (A) can be selected under
State at least one of group of the composition of 11~chemical formula of chemical formula 31：
[chemical formula 11]
[chemical formula 12]
[chemical formula 13]
[chemical formula 14]
[chemical formula 15]
[chemical formula 16]
[chemical formula 17]
[chemical formula 18]
[chemical formula 19]
[chemical formula 20]
[chemical formula 21]
[chemical formula 22]
[chemical formula 23]
[chemical formula 24]
[chemical formula 25]
[chemical formula 26]
[chemical formula 27]
[chemical formula 28]
[chemical formula 29]
[chemical formula 30]
For example, compound (A) according to an embodiment of the invention can be by making the grignard of ketone and grignard reagent reacting
React and manufacture.Therefore, can be stably generated in a mild condition according to the compound (A) of the present embodiment.
Above-claimed cpd (A) according to an embodiment of the invention if content can reach the object of the invention, just do not have
There is special limitation, for example, can be 10~70 weight % in composition total weight, when meeting above range, can make above-mentioned
The effect performance of the present invention is most excellent.
Solvent (B)
As long as solvent according to an embodiment of the invention has sufficiently deliquescent organic to above-claimed cpd (A)
Solvent is just not particularly limited, such as can enumerate propylene glycol methyl ether acetate (propylene glycol monomethyl
ether acetate；PGMEA), propylene glycol monomethyl ether (propylene glycol monomethyl ether；PGME), ring
Hexanone, ethyl lactate, gamma-butyrolacton (γ-butyrolactone；GBL), acetylacetone,2,4-pentanedione (acetyl acetone) etc., preferably
Can be propylene glycol methyl ether acetate (propylene glycol monomethyl ether acetate；PGMEA).
Solvent (B) according to an embodiment of the invention if content can reach the object of the invention and just do not limit especially
System, according to the present invention composition in can be with addition to reacted constituent and other additives including compound (A)
Surplus includes.For example, in the composition be used only compound (A) in the case of, in composition total weight, solvent can be 30~
90 weight %, when meeting above range, it can effectively show the effect of the invention described above.
Crosslinking agent and catalyst
In addition, as needed, hard mask composition according to an embodiment of the invention can be further comprising crosslinking
At least one of agent and catalyst.
Above-mentioned crosslinking agent can make polymer in reaction of the acid catalytic action occurs caused by by heating
Repeat unit crosslinking, as long as can by caused by acid come the hydroxyl in a manner of catalytic action occurs with compound (A)
The crosslinking agent of base reaction, is just not particularly limited.As the typical example of such crosslinking agent, it can use and be selected from by melamine
Any of group that amine, amino resins, glycoluril compounds and diepoxides form.
By further including above-mentioned crosslinking agent, it can more strengthen the curing characteristics of hard mask composition.
As the concrete example of above-mentioned crosslinking agent, the amino resins of etherificate can be included, for example methylated or butylated
Melamine (as concrete example, there is N- methoxies-melamine or N- butoxymethyls-melamine) and methylate
Or butylated urea (urea) resin (as concrete example, there is Cymel U-65 resins or the resins of UFR 80), following chemical formula
Double (hydroxyl first represented by glycolurii derivative (as concrete example, there is Powderlink 1174), chemical formula 42 represented by 41
Base)-paracresol compound) etc..In addition, compound and the institute of following chemical formula 44 of bis-epoxy system represented by following chemical formula 43
The compound of the melamine series of expression is also used as crosslinking agent.
[chemical formula 41]
[chemical formula 42]
[chemical formula 43]
[chemical formula 44]
As above-mentioned catalyst, acid catalyst or base catalyst can be used.
Above-mentioned acid catalyst can use the acid catalyst of thermal activation.As the example of acid catalyst, can use to first
The organic acid of benzene sulfonic acid monohydrate (p-toluene sulfonic acid monohydrate) etc, furthermore, it is possible to enumerate
The compound of TAG (thermal acid generator) system with storage stability.Thermal acid generator discharges when being heat treatment
The acid generator compound of acid, such as p-methyl benzenesulfonic acid pyridine can be usedSalt (pyridinium p-toluene
Sulfonate), 2,4,4,6- tetrabromos cyclohexadienone, benzoin tosylate, 2- nitrobenzyl tosylats, organic
Arrcostab of sulfonic acid etc..
As above-mentioned base catalyst, NH can be used4OH or selected from NR4In ammonium hydroxide represented by OH (R is alkyl)
It is any.
As long as in addition, other known photonasty catalyst also its its with antireflective composition in Resist Technology field
His composition has the use of compatibility can.
In the case of comprising above-mentioned crosslinking agent, relative to the parts by weight of above-claimed cpd (A) 100, the content of crosslinking agent can
Think the parts by weight of 1 parts by weight~30, preferably can be the parts by weight of 5 parts by weight~20, more preferably can be the weight of 5 parts by weight~10
Part.In addition, in the case of comprising above-mentioned catalyst, relative to the parts by weight of above-claimed cpd (A) 100, the content of catalyst can
Think the parts by weight of 0.001 parts by weight~5, preferably can be the parts by weight of 0.1 parts by weight~2, more preferably can be 0.1 parts by weight~
1 parts by weight.
In the case where the content of above-mentioned crosslinking agent is in above range, the optics of formed lower membrane can be made special
While property is constant, appropriate crosslinking feature is obtained.
In addition, in the case where above-mentioned catalyst content is in above range, appropriate crosslinking feature can be obtained, and
The acidity impacted to storage stability can suitably be maintained.
Additive
As needed, hard mask composition of the invention can be further comprising additives such as surfactants.As
Above-mentioned surfactant, alkylbenzenesulfonate, alkyl pyridine can be usedSalt, polyethylene glycols, quaternary ammonium salt etc., but it is and unlimited
In this.Now, relative to the parts by weight of above-claimed cpd (A) 100, the content of surfactant can be the weight of 0.1 parts by weight~10
Measure part.In the case where the content of above-mentioned surfactant is in above range, the optics of formed lower membrane can be made
While characteristic is constant, appropriate crosslinking feature is obtained.
Hereinafter, in order to help to understand the present invention, there is provided preferred embodiment, but these embodiments simply illustrate the present invention,
Appended claims scope is not intended to limit, embodiment can be carried out in the range of scope of the invention and technological thought various
Change and modification, this it will become apparent to those skilled in the art that it is such deformation and modification certainly fall within
Attached right.
Embodiment and comparative example
The hard mask composition of composition and content (weight %) described in manufacture table 1 below and table 2.
[table 1]
[table 2]
A-1：
A-2：
A-3：
A-4：
A-5：
A’-1：
A’-2：
A’-3：
B-1：Propylene glycol methyl ether acetate (propylene glycol monomethyl ether acetate；
PGMEA)
C-1：N- methoxies-melamine
D-1：P-methyl benzenesulfonic acid pyridineSalt
E-1：Triethylene glycol
Experimental example
1. Evaluation of Heat Tolerance
Composition is dried in vacuo and removes solvent, takes a part of sample, under a nitrogen, utilize thermogravimetric analysis
(thermogravimetric analysis, TGA), while 800 DEG C are warming up to, one side quality measurement loss late.
Mass loss rate={ quality of when (initial mass -800 DEG C)/initial mass } x 100%
<Heat-resisting sex determination>
◎：Mass loss rate is less than 10%
○：Mass loss rate is 10% less than 15%
△：Mass loss rate is 15% less than 25%
×：Mass loss rate is more than 25%
2. etching selectivity
Using spin-coating method, the sample solution prepared in embodiment 1~14 and comparative example 1~5 is respectively coated on silicon chip,
Toasted 60 seconds at 200 DEG C, form thicknessFilm.On each film formed, ArF photoresists are coated with, 110
DEG C baking 60 seconds, use ASML (XT:1450G, NA 0.93) company exposure device, after being exposed respectively, utilize TMAH
(the 2.38wt% aqueous solution) is developed respectively, obtains 60nm lines and gap (line and space) pattern.
The test piece of resulting patterning is further solidified 60 seconds at 110 DEG C, uses CHF3/CF4Mixed gas, it will try
Piece carries out dry ecthing in 20 seconds respectively, by FE-SEM, observes each section, determines etching speed, judge to halogen plasma
Elching resistant, i.e. etching selectivity.
<The elching resistant of halogen gas is judged>
◎：Etching speed is less than 10A/Sec
○：Etching speed is 10A/Sec less than 11A/Sec
△：Etching speed is 11A/Sec less than 12A/Sec
×：Etching speed is more than 12A/Sec
[table 3]
It can confirm with reference to table 3, the heat resistance and etching selectivity of embodiment show excellent, the heat resistance of comparative example and erosion
It is bad to carve selectivity.
Claims (8)
1. a kind of hard mask compositions, it includes the compound and solvent that intramolecular contains two or more tertiary alcohol base.
2. hard mask compositions according to claim 1, the compound is selected from by 1~chemical formula of following chemical formula 3
Represented compound group at least one of group：
Chemical formula 1
In formula, n is 1~10,
R1And R2The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar1The arlydene of carbon number 6~20 is each independently,
Ar2And Ar3The aryl of carbon number 6~20 is each independently,
The Ar1、Ar2、Ar3、R1And R2Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with ,-the Ra
For the aliphatic alkyl of carbon number 1~the 6 ,-AraFor the aryl of carbon number 6~20,
Chemical formula 2
In formula, n is 2~10,
R3The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar4The aryl for the carbon number 6~20 that can be substituted for n hydrogen atom,
Ar5The aryl of carbon number 6~20 is each independently,
The R3、Ar4And Ar5Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with ,-the RaIt is former for carbon
The aliphatic alkyl of subnumber 1~the 6 ,-AraFor the aryl of carbon number 6~20,
Chemical formula 3
In formula, R4And R5The aliphatic alkyl of carbon number 1~6 or the aryl of carbon number 6~20 are each independently,
Ar6And Ar7The arlydene of carbon number 6~20 is each independently,
The R4、R5、Ar6And Ar7Can be independently of one another by-OH ,-ORa、-OAra、-Ra、-AraIt is further substituted with ,-the RaFor
The aliphatic alkyl of carbon number 1~the 6 ,-AraFor the aryl of carbon number 6~20.
3. hard mask compositions according to claim 2, the Ar1、Ar6And Ar7It is each independently phenylene, naphthalene two
Base, anthracene diyl, stilbene diyl or pyrene diyl.
4. hard mask compositions according to claim 2, the Ar2、Ar3And Ar5It is each independently phenyl, naphthyl, anthracene
Base, stilbene radicals or pyrenyl.
5. hard mask compositions according to claim 2, the Ar4For phenyl, naphthyl, anthryl, stilbene radicals or pyrenyl.
6. hard mask compositions according to claim 2, the R1~R5It is each independently methyl, vinyl, pi-allyl
Or phenyl.
7. hard mask compositions according to claim 1, in composition total weight, the weight of compound 10~70 is included
Measure %, the weight % of the solvent 30~90.
8. hard mask compositions according to claim 1, it further includes at least one of crosslinking agent and catalyst.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0053110 | 2016-04-29 | ||
| KR1020160053110A KR102539857B1 (en) | 2016-04-29 | 2016-04-29 | Composition for hard mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107340687A true CN107340687A (en) | 2017-11-10 |
| CN107340687B CN107340687B (en) | 2022-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710220902.XA Active CN107340687B (en) | 2016-04-29 | 2017-04-06 | Composition for hard mask |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102539857B1 (en) |
| CN (1) | CN107340687B (en) |
| TW (1) | TWI709821B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111587403A (en) * | 2018-02-21 | 2020-08-25 | 东友精细化工有限公司 | Composition for hard mask |
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| TWI709821B (en) | 2020-11-11 |
| KR20170123881A (en) | 2017-11-09 |
| CN107340687B (en) | 2022-01-25 |
| KR102539857B1 (en) | 2023-06-07 |
| TW201807501A (en) | 2018-03-01 |
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