CN107340612B - A kind of light-operated Terahertz outside phase-modulator - Google Patents
A kind of light-operated Terahertz outside phase-modulator Download PDFInfo
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- CN107340612B CN107340612B CN201710475724.5A CN201710475724A CN107340612B CN 107340612 B CN107340612 B CN 107340612B CN 201710475724 A CN201710475724 A CN 201710475724A CN 107340612 B CN107340612 B CN 107340612B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
Abstract
The present invention provides a kind of light-operated Terahertz outside phase-modulators, belong to function solenoid device arts.The present invention is made of semiconductor substrate, artificial micro-structure and controlled dynamic switch, by applying external photoinduction, change the conductivity and dielectric constant of switching material, thus change the EMR electromagnetic resonance mode of artificial micro-structure, to realize phase-modulation to THz wave.Phase-modulator provided by the invention can realize 100 degree or more of phase modulation depth and the maximum phase modulation capability more than 150 degree in big bandwidth；It can be realized by micrometer-nanometer processing technology, mature preparation process is reliable；Realize the phased device of dynamic that semiconductor material is combined with artificial micro-structure array, a variety of high-performance semiconductor materials can be selected in its switching material, there are many control methods are optional, in fields such as Terahertz wireless communication, THz wave spectral technology, Terahertz safety check imagings with good practical application value.
Description
Technical field
The invention belongs to function solenoid device arts, while also belonging to including modulator, filter, photoconductive switch etc.
Communication device field inside.
Background technique
THz wave is a kind of electromagnet wave spectrum between photonics and electronics, is often referred to frequency and is located at
Electromagnetic radiation within 0.1THz~10THz.In recent years, have benefited from the rapid development of THz source and detection technique, based on too
The technical fields such as imaging, spectrum analysis, electronic information, the radar fix of Hertz wave show great application prospect.Meanwhile
Important directions one of of the Terahertz wireless communication technique as Terahertz field, have been now subjected to the attention of countries in the world.Terahertz
Hereby wave is as wireless communication carriers, the bandwidth, good penetration capacity (compared to infrared and optic communication) with superelevation with it is superior
Directionality.The bandwidth of superelevation makes THz wave in the following ultra-wideband communications, large capacity wireless data transmission, secret communication etc.
It is civilian to attract attention with national defence.Since THz wave wavelength is between 0.03mm~3mm, thus there is good penetrate
Ability can keep short distance broadband connections under dense smoke, Sand Dust Environment.The angle of divergence of THz wave is relatively small, has superior
Directionality, thus in satellite point-to-point communication, short distance atmospheric communication and ground point-to-point communication have lesser power damage
Consumption is to realize the space point-to-point communication of vast capacity.
As the Terahertz application system with important application prospect, such as Terahertz wireless communication system, Terahertz wave spectrum
Imaging system etc., Terahertz modulation device is undoubtedly one of its key core device, therefore Terahertz modulation device also becomes
Terahertz science and technology field generally acknowledged research emphasis and technological difficulties.Since 2004, in states such as Nature/Science
Natural science top publication in border has published the article of more THz wave external modulators successively, and content includes being based on mixing silicon
Base, GaAs base, phase-change material base and graphene etc. are combined with artificial micro-structure, utilize additional temperature, illumination, electric field etc.
Energisation mode realize Terahertz wave modulation, also partially solve the problems, such as Terahertz amplitude modulation.But Terahertz
Wave modulation also needs to realize phase-modulation other than amplitude is modulated, however related high performance device research is rarely reported how
Realize phase substantially, High Speed Modulation become a Pinch technology of the research field.And the breakthrough of this technology, the device
Successful development will be significantly reduced the spectral interference of the Terahertz wireless communication system based on reactance modulation system, to improve
The purity of frequency spectrum reduces the data processing difficulty of communication receiver, while will also greatly improve sweeping for the phased imaging system of Terahertz
The parameters such as range, scanning accuracy are retouched, the realization and industrialization in Terahertz high performance system would be more advantageous in this.
Summary of the invention
The technical problem to be solved by the invention is to provide one kind to be realized by additional luminance signal to space THz wave
The modulator of quick dynamic phasing regulation effectively can carry out fast phase modulation and phase by the THz wave to designed Frequency point
Position modulation depth reaches 100 degree or more in large bandwidth.
The present invention solves the technical solution that described problem uses are as follows:
A kind of light-operated Terahertz outside phase-modulator, including semiconductor substrate 1 and artificial micro-structure resonance array
2；The artificial micro-structure resonance array 2 is located at the upper surface of semiconductor substrate 1；The artificial micro-structure resonance array 2 is by week
The dynamic EMR electromagnetic resonance unit composition of phase property distribution, each EMR electromagnetic resonance unit includes that artificial micro-structure 3 and controlled dynamic are opened
Close 4；The artificial micro-structure 3 is overlapped by " work " shape structure and an opening circular ring structure；" work " the shape structure
Two lateral minor matters length it is identical, longitudinal minor matters connect the center of two lateral minor matters；The circular ring structure has left and right two
The identical opening of size, and the center that is open is located on same level straight line with the annulus center of circle；The annulus center of circle and " work "
The center of shape structure longitudinal direction minor matters is overlapped；The controlled dynamic switch 4 is embedded in artificial micro-structure 3；The controlled dynamic is opened
It closes 4 and is nested in metal ring aperture position in artificial micro-structure 3, be mutually connected with metal wire above and below opening.
The side length of the controlled dynamic switch 4 is greater than the line width of artificial micro-structure 3, also greater than the width of opening, switch
Thickness is less than the thickness of 3 metal wire of artificial micro-structure.
The artificial micro-structure resonance array 2 is the M N array being made of multiple resonant elements, wherein M >=4, N >=4；
The lateral minor matters of " work " shape structure of adjacent artificial micro-structure 3 are connected with each other.
The semiconductor substrate 1 selects the material mediums small for THz wave Insertion Loss such as sapphire, quartz, silicon carbide.
The artificial micro-structure 3 is using high conductivity metals materials such as Al, Ag, Au.
High Resistivity Si, GaAs, gallium nitride, indium phosphide, vanadium dioxide (VO can be used in the controlled dynamic switch 42) etc. half
Conductor material and phase-change material.
The beneficial effects of the present invention are:
(1) the artificial electromagnetic resonance structure that the present invention uses is humorous by conventional dipole resonance " work " word structure and tradition L-C
Vibration return openings circular ring structure intercouple, wherein mode of resonance be also by dipole resonance and L-C resonance coupled in common and
At resonant intensity substantially being enhanced, to improve phase-modulation ability；
(2) Terahertz Spatial Phase Modulator of the present invention is using biswitch material system design in parallel, i.e., each
Containing there are two controlled dynamic switch in modulation unit, to improve device itself to the control ability of THz wave, enhance
The resonant intensity of resonance structure, the phase modulation depth to obtain big are laid a good foundation；
(3) structure is complicated for the resonant element that the present invention uses, and switching material is using Nested design and artificial micro-structure gold
Belong to line to combine so that resonance structure under dynamic switch on off operating mode there are a variety of different modes of resonance and
Make to intercouple between different mode, thus significantly improves modulation depth；
(4) control mode of phase-modulator of the present invention is flexible and changeable, additional according to the difference of selected switching material
The light wave that different frequency range may be selected is motivated, therefore the modulator has very strong versatility, the work being suitable under different illumination
Environment；
(5) the modulation unit array to be formed is designed using artificial micro-structure in the present invention is a kind of two-dimension plane structure, can
It is realized by microfabrication means, technical maturity is easy to make, and the design scheme bring for avoiding complicated stereochemical structure is high-leveled and difficult
Degree processing；
(6) phase-modulator of the present invention is the THz wave phase converter of transmission-type, compared to reflective phase converter,
The device operation is simpler, using more convenient, more can effectively play a role especially in Terahertz point-to-point communication；
(7) phase-modulator of the present invention only single layer work when, it is reachable in the bandwidth of operation internal modulation depth of 50GHz
100 to 150 degree, 3 layers of phase converter superposition are controlled using all phase that 2 π can be realized, therefore it has high phase-modulation effect
Rate；
(8) while possessing big modulation bandwidth and modulation depth, which is operable with room temperature, normal pressure, non-real
Under empty condition and it is not necessarily to WAVEGUIDE LOADED, is easy to encapsulate, these make the phase-modulator have good actual application prospect.
Detailed description of the invention
Fig. 1 is the whole design scheme schematic diagram of light-operated Terahertz outside phase-modulator；
Fig. 2 is light-operated Terahertz outside phase modulator modulation unit three-dimensional schematic diagram；
Fig. 3 is the electric field and Surface current distribution ideograph of resonant element when not adding external drive；
Fig. 4 is the electric field and Surface current distribution ideograph of resonant element when adding external drive；
Fig. 5 is that light-operated Terahertz outside phase-modulator transmission curve under the extrinsic motivated of varying strength emulates
Figure；
Fig. 6 is that light-operated Terahertz outside phase-modulator phase change under the extrinsic motivated of varying strength emulates
Figure.
Specific embodiment
With reference to the accompanying drawing with example to the present invention carry out deeper into detailed description.
Present embodiment provides a kind of light-operated Terahertz outside phase-modulator, structural schematic diagram such as Fig. 1
It is shown, including semiconductor substrate 1 and artificial micro-structure resonance array 2；The artificial micro-structure resonance array 2 is by periodic distribution
Dynamic EMR electromagnetic resonance unit composition, cellular construction schematic diagram is as shown in Fig. 2, each resonant element includes 3 He of artificial micro-structure
Controlled dynamic switch 4；The artificial micro-structure resonance array 2 is the array for M × N that multiple resonant elements are constituted, wherein M >=4,
N≥4；The adjacent artificial micro-structure 3 of every row passes through upper and lower two lateral minor matters phase each other in the artificial micro-structure resonance array 2
Even.
The artificial micro-structure 3 is overlapped by " work " shape structure and an opening circular ring structure；" work " shape
The lateral minor matters length of two of structure is identical, and longitudinal minor matters connect the center of two lateral minor matters；The circular ring structure has left and right
The identical opening of two sizes, and the center that is open is located on same level straight line with the annulus center of circle；The annulus center of circle with it is described
The center of " work " shape structure longitudinal direction minor matters is overlapped.
Each resonant element includes two bilateral symmetries and identical controlled dynamic switch 4, the controlled dynamic are opened
4 aperture positions for being embedded in metal ring structure in artificial micro-structure 3 are closed, are mutually connected with metal wire above and below opening；It is described
The side length of controlled dynamic switch 4 is greater than the line width of artificial micro-structure 3, and also greater than the width of opening, the thickness of switch is less than artificial
The thickness of 3 metal wire of micro-structure.
Light-operated Terahertz outside phase-modulator provided by the invention is composition metal-semiconductor structure, above-mentioned skill
In art scheme, the semiconductor substrate 1 can choose the semiconductor materials such as sapphire, quartz, silicon carbide；The controlled dynamic is opened
Closing 4 can choose High Resistivity Si, GaAs, gallium nitride, indium phosphide, vanadium dioxide (VO2) etc. semiconductor materials and phase-change material.Institute
Stating 3 metal wire of artificial micro-structure generally uses Al, Ag, Au etc. to constitute, and other characteristic closes can also be used in above-mentioned metal material
Metal replaces.
The phase modulation mechanism of light-operated Terahertz Spatial Phase Modulator provided by the invention is to shine excitation by applying exterior light,
Change the dielectric constant and conductivity of 4 material of controlled dynamic switch, the variation of 4 material property of controlled dynamic switch controls humorous
The transformation of mode of resonance in vibration unit, the artificial micro-structure resonance array 2 being made of multiple resonant elements is to incident in space
Terahertz wave beam carries out dynamic phase modulation.The frequency range of additional light wave is determined by the material for constituting controlled dynamic switch 4.
Specific modulated process are as follows: when exterior light not being added to shine, the conductivity very little of 4 material of controlled dynamic switch, controllably
Dynamic switch 4 is in an off state, and slave pattern Fig. 3 can see, and electric field is mainly distributed on metal ring opening and up and down cross
To the position of minor matters, LC resonance mode (mode is 3.) and dipole resonance mode (mode 1. and 2.) coexist and Three models coupling each other
It closes, as shown in figure 5, structural resonance frequency is 0.45THz at this time；It, can when application exterior light is shone, and intensity of illumination is gradually increased
The characteristic of control 4 material of dynamic switch also changes therewith, and with gradually increasing for conductivity, controlled dynamic switch 4 is by off state
To connected state gradual change, it is connected to the gap of annulus opening, metal ring is closed by controlled dynamic switch 4,
It can be seen that, electric field is concentrated mainly at the lateral minor matters of resonant element structure, and surface current forms new on slave pattern Fig. 4
The mode of similar dipole 4., and with mode 1. coupling coexistence, as shown in figure 5, structural resonance frequency is 0.51THz at this time.
The Surface current distribution schematic diagram on the left of resonant element is only gived in figure, since resonant element is a kind of bilateral symmetry,
Current distributions and left side on the right side of it are symmetrical.In above-mentioned dynamic changing process, the transformation of mode of resonance leads to resonance frequency
The offset of point, as additional light intensity is gradually increased, the mode of resonance of resonant element is by one mode couple state (1., 2., 3.)
To another Mode Coupling state (1., 4.) gradual change, resonance peak is gradually offset to 0.51THz, the phase of THz wave by 0.45THz
Potential difference value is also gradually increased.The phase converter is set forth outside difference plus under light intensity in Fig. 5 and Fig. 6, and amplitude and phase transmission are bent
The three-dimensional artificial result of line.It will be appreciated from fig. 6 that the phase-modulator can achieve 100 degree or more in the frequency range of 50GHz
Phase modulation depth, and maximum phase modulation depth is up to 150 degree or so.
It should be pointed out that by the structural parameters for changing resonant element, such as annular radii, " work " shape structure minor matters are long
Degree etc., accurately controls the resonance frequency point, bandwidth of operation and phase modulation depth of the phase converter, which can be applied to different work
Frequency range.
In conclusion the Terahertz outside phase-modulator based on controlled dynamic switch 4 is a kind of high practicability
The more regulation and control models for working in THz frequency range, big modulation depth, wide bandwidth phase modulator.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, for those skilled in the art, is not departing from the present invention
Under the premise of principle, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (6)
1. a kind of light-operated Terahertz outside phase-modulator, which is characterized in that including semiconductor substrate (1) and artificial micro- knot
Structure resonance array (2)；The artificial micro-structure resonance array (2) is located at the upper surface of semiconductor substrate (1)；Artificial micro- knot
Structure resonance array (2) is made of the dynamic EMR electromagnetic resonance unit of periodic distribution, each EMR electromagnetic resonance unit includes artificial micro-
Structure (3) and controlled dynamic switch (4)；The artificial micro-structure (3) is by " work " shape structure and an opening circular ring structure
It overlaps；The lateral minor matters length of two of " work " the shape structure is identical, and longitudinal minor matters connect the center of two lateral minor matters；
The circular ring structure has the identical opening of two sizes in left and right, and the center that is open is located on same level straight line with the annulus center of circle；
The annulus center of circle is overlapped with the center of " work " shape structure longitudinal direction minor matters；The controlled dynamic switch (4) is embedded in manually
In micro-structure (3)；The controlled dynamic switch (4) is nested in metal ring aperture position in artificial micro-structure (3), with opening
Upper and lower metal wire is mutually connected.
2. light-operated Terahertz outside phase-modulator according to claim 1, which is characterized in that the controlled dynamic
The side length for switching (4) is greater than the line width of artificial micro-structure (3), and also greater than the width of opening, the thickness of switch is less than artificial micro- knot
The thickness of structure (3) metal wire.
3. light-operated Terahertz outside phase-modulator according to claim 1, which is characterized in that artificial micro- knot
Structure resonance array (2) is the M N array being made of multiple resonant elements, wherein M >=4, N >=4；Adjacent artificial micro-structure (3)
The lateral minor matters of " work " shape structure are connected with each other.
4. light-operated Terahertz outside phase-modulator according to claim 1, which is characterized in that the semiconductor lining
Bottom (1) selects sapphire, quartz or silicon carbide.
5. light-operated Terahertz outside phase-modulator according to claim 1, which is characterized in that artificial micro- knot
Structure (3) uses Al, Ag or Au.
6. light-operated Terahertz outside phase-modulator according to claim 1, which is characterized in that the controlled dynamic
Semiconductor material or phase-change material can be used in switch (4).
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| CN108287418B (en) * | 2018-02-12 | 2019-10-25 | 中国科学技术大学 | A kind of automatically controlled modulator of THz wave |
| CN108596321A (en) * | 2018-04-28 | 2018-09-28 | 兰州大学 | A kind of programmable chipless electronic tag |
| CN111367096B (en) * | 2020-03-05 | 2021-09-24 | 电子科技大学 | Terahertz amplitude modulator based on flexible metamaterial |
| CN112510352A (en) * | 2020-11-04 | 2021-03-16 | 西南科技大学 | Terahertz wave radiation method and system of microstructure photoconductive antenna |
| CN113406815B (en) * | 2021-05-19 | 2022-08-16 | 华南理工大学 | Terahertz active super-surface amplitude type spatial modulator |
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| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| CN105549228A (en) * | 2015-12-21 | 2016-05-04 | 电子科技大学 | Terahertz space phase modulator based on high electron mobility transistor |
| CN105676482A (en) * | 2016-01-11 | 2016-06-15 | 电子科技大学 | Terahertz modulator based on mode coupling |
| WO2017038714A1 (en) * | 2015-08-28 | 2017-03-09 | 国立大学法人大阪大学 | Device for measurement, and measurement apparatus using same |
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| WO2008121159A2 (en) * | 2006-10-19 | 2008-10-09 | Los Alamos National Security Llc | Active terahertz metamaterial devices |
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| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| WO2017038714A1 (en) * | 2015-08-28 | 2017-03-09 | 国立大学法人大阪大学 | Device for measurement, and measurement apparatus using same |
| CN105549228A (en) * | 2015-12-21 | 2016-05-04 | 电子科技大学 | Terahertz space phase modulator based on high electron mobility transistor |
| CN105676482A (en) * | 2016-01-11 | 2016-06-15 | 电子科技大学 | Terahertz modulator based on mode coupling |
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