CN107329635A - Conductive structure and contact panel - Google Patents
Conductive structure and contact panel Download PDFInfo
- Publication number
- CN107329635A CN107329635A CN201610291786.6A CN201610291786A CN107329635A CN 107329635 A CN107329635 A CN 107329635A CN 201610291786 A CN201610291786 A CN 201610291786A CN 107329635 A CN107329635 A CN 107329635A
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- Prior art keywords
- oxide layer
- conductive
- conductive structure
- contact panel
- wire
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 150000004831 organic oxygen compounds Chemical class 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims 1
- -1 silica Compound Chemical class 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 126
- 230000004907 flux Effects 0.000 description 19
- 230000005540 biological transmission Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical class [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 206010057855 Hypotelorism of orbit Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003666 anti-fingerprint Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
Abstract
The present invention provides a kind of conductive structure and the contact panel comprising the conductive structure.A kind of conductive structure includes a conductive oxide layer and a dielectric oxide layer.Dielectric oxide layer is arranged on conductive oxide layer.Conductive oxide layer and the overall sheet resistance R of dielectric oxide layer meet 105 ohm/side≤R≤135 ohm/side.The conductive structure that the present invention is provided can both reduce the coupled capacitor between wire, can also prevent and wire short circuit.
Description
Technical field
The present invention relates to a kind of conductive structure, conductive structure and its application especially with regard to a kind of high resistivity
Contact panel.
Background technology
Typical contact panel includes cover plate, touch-control sensing layer and wire.Touch-control sensing series of strata are arranged at lid
The visible area of plate.Wire system is arranged at the non-visible area of cover plate, and is electrically connected with touch-control sensing layer.It is general next
Say, touch-control sensing layer includes multiple first electrode strings and multiple second electrode strings.First electrode string and second
Electrode array separately and insulate, and the end of both electrode arrays is all connected with wire, will be sensed with profit
Touching signal passes to signal processing unit.
Under the form of some wirings, wire system of the wire of first electrode string with being connected second electrode string is connected
Abreast it is distributed in the non-visible area of cover plate, such wire laying mode easily causes production between both wires
Raw coupled capacitor, and then increase first electrode string and the electric capacity of the intersection of second electrode string, cause this to intersect
The electric capacity at place may not be touched preceding just saturation, and then influence the touch-control sensing function of this intersection.
Therefore, part contact panel can also include metallic ground structure, and this metallic ground structure system is arranged at company
Connect the wire of first electrode string and connect second electrode string wire between, to reduce between both wires
Coupled capacitor, so as to reduce first electrode string and the electric capacity of the intersection of second electrode string.
However, because the resistance of metallic ground structure is too low, therefore when the hypotelorism of metal structure and wire,
Easily with wire short circuit.
The content of the invention
Conductive structure disclosed by the embodiment of the present invention can both reduce the coupled capacitor between wire, may be used also
Prevent and wire short circuit.
According to one of present invention embodiment, a kind of conductive structure includes a conductive oxide layer and a dielectric oxygen
Change layer.Dielectric oxidation series of strata are arranged on conductive oxide layer.The entirety side of conductive oxide layer and dielectric oxide layer
Hinder R and meet 105 ohm/side≤R≤135 ohm/side.
According to the present invention another embodiment, a kind of contact panel comprising an euphotic cover plate, plural number electrode array,
Complex lead and at least one foregoing conductive structure.This little electrode array system is arranged on the euphotic cover plate and phase
Mutually insulation.This little electrode array is electrically connected in this little wire.Foregoing conductive structure and electrode array and wire
Insulation, and conductive structure part system between this little wire or this little electrode array one it is a little with this
Between the one of wire.
In above-mentioned embodiment, the overall sheet resistance R being collectively forming by conductive oxide layer and dielectric oxide layer
105 ohm/side≤R≤135 ohm/side is met, therefore the overall resistivity of conductive structure can be lifted.Due to height
The conductive structure system of resistivity is located between wire or between wire and electrode array, therefore not only can be conductive by it
Property reduces the coupled capacitor between wire or between wire and electrode array, can also be forthright by its high resistance
Matter prevents short circuit.
According to another embodiment of the present invention, a kind of contact panel includes an euphotic cover plate, a touch-control sensing
Layer, ground structure and an external ground structure in one.Touch-control sensing series of strata are arranged on euphotic cover plate.It is inscribed
Ground structure system is arranged on euphotic cover plate, and is insulated around touch-control sensing layer, and with touch-control sensing layer.It is inscribed
The sheet resistance R of ground structure meets 105 ohm/side≤R≤135 ohm/side.External ground structure ring is around interior ground junction
Structure.The resistivity of interior ground structure is higher than the resistivity of external ground structure.
In above-mentioned embodiment, because interior ground structure is compared to the conduction that external ground structure is high resistivity
In the case of structure, identical length and cross-sectional area, interior ground structure has higher resistance, therefore can be beneficial to
Static discharge (ElectroStatic Discharge；ESD) outside external ground structure export contact panel, so as to keep away
Exempt from electrostatic discharge effect wire and touch-control sensing layer.
Brief description of the drawings
Fig. 1 illustrates the top view of the contact panel according to an embodiment of the present invention；
Fig. 2 illustrates profile of Fig. 1 contact panel along 2-2 lines；
Fig. 3 is shown in the X-ray diffraction diagram of the lower indium tin oxide layer formed of different oxygen flux；
Fig. 4 illustrates the top view of the contact panel according to another embodiment of the invention；
Fig. 5 illustrates the top view of the contact panel according to another embodiment of the invention；
Fig. 6 illustrates the top view of the contact panel according to another embodiment of the invention；
Fig. 7 illustrates the top view of the contact panel according to another embodiment of the invention.
Primary symbols explanation：
100：Euphotic cover plate
110：Inner surface
112：Light tight region
114：Transmission region
120：Outer surface
200：Touch-control sensing layer
210：First electrode string
212：First electrode
214：First connecting portion
220：Second electrode string
222：Second electrode
224：Second connecting portion
230：Collets
300：First wire
400：Second wire
500、500a：Conductive structure
510：Conductive oxide layer
520：Dielectric oxide layer
530：Contact interface
600：Insulation system
700：Earth terminal
800：External ground structure
A：Intersection
D1、D2：Length direction
G1、G2：Gap
Embodiment
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.
The plural embodiment of the present invention will be disclosed with schema below, as clearly stated, in many practices
Details will be explained in the following description.However, be familiar with this area technical staff it should be appreciated that
In some embodiments of the present invention, details in these practices not necessarily, therefore is not applied to limit
The present invention.In addition, for the sake of simplifying schema, some known usual structures in the drawings will be with letter with component
The mode of single signal illustrates it.In addition, watched for the ease of reader, in schema the size of each component not according to
Actual ratio is illustrated.
Fig. 1 illustrates the top view of the contact panel according to an embodiment of the present invention.It is tactile that Fig. 2 illustrates Fig. 1
Control profile of the panel along 2-2 lines.As shown in Figures 1 and 2, contact panel comprising euphotic cover plate 100,
The 200, first wire 300 of touch-control sensing layer, the second wire 400 and conductive structure 500.Touch-control sensing layer
200th, the first wire 300, the second wire 400 and conductive structure 500 are the phase for being arranged at euphotic cover plate 100
Homonymy, and can be covered and be protected by euphotic cover plate 100.Touch-control sensing layer 200 includes first electrode string 210
And second electrode string 220.First electrode string 210 and second electrode string 220 are to be arranged at euphotic cover plate 100
On.First electrode string 210 has length direction D1.Second electrode string 220 has length direction D2.The
The length direction D1 of one electrode array 210 intersects with the length direction D2 of second electrode string 220, and the first electricity
Pole string 210 insulate with second electrode string 220, to prevent both short circuits.First wire 300 is electrically connected with the
One electrode array 210.Second wire 400 is electrically connected with second electrode string 220.The conductive structure 500 of at least part
System be located between the first wire 300 and the second wire 400 and with 400 points of the first wire 300 and the second wire
From.In other words, the first wire 300 and partially electronically conductive separated by gap G1 of structure 500, and the second wire 400
With the partially electronically conductive separated by gap G2 of structure 500.
Due to there is conductive structure 500 between the first wire 300 and the second wire 400, therefore conductive structure
500 can avoid the first wire 300 and the second wire 400 from directly producing coupled capacitor, so as to reduce the first electricity
The pole string 210 and intersection A of second electrode string 220 electric capacity.Putting this another way, conductive structure 500
Coupled capacitor C1, conductive structure 500 can be produced between the first wire 300 near conductive structure 500
Coupled capacitor C2 can be produced with the second wire 400 near conductive structure 500.The two coupled capacitors C1
Equivalent series capacitance can be formed with C2, and the value of this equivalent series capacitance isCompared to first
The coupled capacitor that the wire 400 of wire 300 and second is directly formed, what coupled capacitor C1 and C2 was formed etc.
It is relatively small to imitate series capacitance.Therefore, configure conductive between the first wire 300 and the second wire 400
Structure 500 may help to reduce the coupled capacitor between the first wire 300 and the second wire 400.
In addition, conductive structure 500 can also be prevented and the first wire 300 and/or the short circuit of the second wire 400.Enter
For one step, as shown in Fig. 2 conductive structure 500 includes conductive oxide layer 510 and dielectric oxide layer 520.
Dielectric oxide layer 520 is to be arranged on conductive oxide layer 510.Conductive oxide layer 510 and dielectric oxide layer 520
Overall resistivity be more than at least twice conductive oxide layer 510 material resistivity, with profit cause conduction
The overall sheet resistance R of oxide layer 510 and dielectric oxide layer 520 meets 105 ohm/side≤R≤135 ohm/side.
In other words, if the entirety for the conductive structure 500 that conductive oxide layer 510 is formed with dielectric oxide layer 520
Resistivity is ρ 1, and the resistivity of the material of conductive oxide layer 510 is ρ 2, then meets the ＞ 2* ρ 2 of ρ 1.
Oxygen of the above-mentioned electrical resistivity property system of conductive structure 500 due to conductive oxide layer 510 when making leads to
Produced by amount.Furthermore, it is understood that in the manufacturing process of conductive structure 500, can first with sputter side
Formula, the conductive material of conductive oxide layer 510 is deposited on euphotic cover plate 100.During sputter,
Oxygen flux can by control between 20sccm (Standard Cubic Centimeter per Minute, it is per minute
Standard milliliters) between 50sccm, preferably 30sccm to 40sccm.After conductive oxide layer 510 is formed,
Dielectric oxide layer 520 can be formed on conductive oxide layer 510, and contacts boundary with the formation of conductive oxide layer 510
Face 530.After conductive oxide layer 510 is formed under such oxygen flux, on conductive oxide layer 510
When forming dielectric oxide layer 520, the overall resistivity of both can significantly surmount (more than twice) conductive oxide layer
510 resistivity of material.By such characteristic, the sheet resistance R of conductive structure 500 can meet 105 ohm/
Side≤R≤135 ohm/side and with high resistivity, and beneficial to preventing with the short circuit of the first wire 300 or with the
The short circuit of two wire 400 is short-circuit with the first wire 300 and the second wire 400.
For example, the material of conductive oxide layer 510 can include zinc oxide (ZnO), tin indium oxide (ITO), oxygen
Change indium zinc (IZO), indium gallium zinc (IGZO), aluminum zinc oxide (AZO), indium oxide aluminium zinc (IAZO) or above-mentioned
It is combined, but the present invention is not limited.The material of dielectric oxide layer 520 can include Si oxide, such as
Silica (SiO2) or organic oxygen compound, but the present invention is not limited.When the conductive oxide layer of above-mentioned material
510 be with high flux (for example：Between 20sccm and 50sccm) oxygen formation when, then arrange in pairs or groups and to be formed
Si oxide thereon, can effectively improve the resistivity of conductive structure 500, and prevent short circuit problem.
Specifically, in some embodiments, the material of conductive oxide layer 510 can be tin indium oxide (ITO),
And the material of dielectric oxide layer 520 can be silica.In other words, conductive oxide layer 510 can be oxidation
Indium tin layer, and dielectric oxide layer 520 can be silicon dioxide layer.Silica series of strata are formed at indium tin oxide layer
On, and formed after indium tin oxide layer so that indium tin oxide layer is contacted with silicon dioxide layer.In indium oxide
In the forming process of tin layers, the flow of oxygen can be between 20sccm and 50sccm.Consequently, it is possible to oxygen
The overall electrical resistance for changing indium tin layer and silicon dioxide layer can reach at least 60 kilohms (thickness of indium tin oxide layer be
60nm), the resistance (about 30 kilohms) of the tin indium oxide more than twice.It follows that working as electric conductive oxidation
Layer 510 be with high flux (for example：Between 20sccm and 50sccm) oxygen formation when, conductive structure
500 can have high resistivity.Following table enumerates the experimental group of conductive structure 500 and the resistance of control group, to assist
Illustrate the conductive oxide layer 510 that high flux oxygen is formed, and combine after silicon dioxide layer, may help to significantly carry
Rise the resistivity of conductive structure 500.
In upper table, the conductive structure of experimental group includes indium tin oxide layer and be formed on indium tin oxide layer two
Silicon oxide layer, and this indium tin oxide layer ties up to high flux oxygen (for example：Between 20sccm and 50sccm)
Lower formation；The conductive structure of control group one is the indium tin oxide layer of equal length and cross-sectional area, control group
One is that the indium tin oxide layer of control group one ties up to small throughput oxygen (such as 2sccm to 3 with the difference of experimental group
Sccm formed under), and silicon dioxide layer is not covered in Zinc oxide/indium oxide tin layers；The conductive structure of control group two
Oxygen in indium tin oxide layer comprising equal length and cross-sectional area, and this tin indium oxide layer formation process leads to
Amount is identical with the oxygen flux of experimental group, and the difference of control group two and experimental group is the indium oxide of control group two
Silicon dioxide layer is not covered with tin layers；The conductive structure of control group three is comprising equal length and cross-sectional area
Indium tin oxide layer and the silicon dioxide layer being formed on indium tin oxide layer, and control group three and the difference of experimental group
It is that the indium tin oxide layer of control group three ties up to what is formed under small throughput oxygen (such as 2sccm to 3sccm).
It can be learnt by the contrast of upper table control group one and control group two, when indium tin oxide layer ties up to shape under high flux oxygen
Cheng Shi, compared with the indium tin oxide layer formed under small throughput oxygen, resistance has small elevation, but changes not
Greatly.It can be learnt by the contrast of upper table control group one and control group three, the tin indium oxide formed under small throughput oxygen
Layer is in conjunction with silicon dioxide layer, and resistance is not also in a substantial change.By upper table experimental group and control group two, three
Contrast can learn, when indium tin oxide layer tie up under high flux oxygen formed when formed simultaneously and silicon dioxide layer
With reference to rear, the resistance value of conductive structure is formed (such as：About between 99.3 kilohms to 113.0 kilohms), greatly
Surmount after indium tin oxide layer ties up to and formed and combined with silicon dioxide layer under small throughput oxygen width, formed
Conductive structure resistance value (such as：About between 20.3 kilohms to 22.0 kilohms).The conductive knot of the present invention
The sheet resistance R of structure meets 105 ohm/side≤R≤135 ohm/side, and routine such as formation under small throughput oxygen
Conductive structure sheet resistance R be 65 ohm/side≤R≤85 ohm/side.Therefore, when tin indium oxide series of strata are with height
During the formation of flux oxygen, and the conductive structure formed after being combined with silicon dioxide layer has larger sheet resistance and electricity
In the case of resistance rate, namely same thickness and cross-sectional area, resistance is larger.
In some embodiments, when conductive oxide layer 510 be with high flux (for example：Between 20sccm with
Between 50sccm) oxygen formation when, crystallinity of the conductive oxide layer 510 on (222) crystallization direction can be more than
70% and less than 100%.For example, when conductive oxide layer 510 is indium tin oxide layer, this tin indium oxide
Crystallinity of the layer on (222) crystallization direction can be more than 70% and less than 100%.Below with X-ray diffraction data
To help to illustrate influence of the oxygen flux to crystallinity, in this, Fig. 3 is see, this figure is shown in different oxygen
The X-ray diffraction diagram (XRD) of the lower indium tin oxide layer formed of flux.Via point of the diffraction data of this figure
Analysis understands that crystallinity of the indium tin oxide layer on (222) crystallization direction can be controlled by oxygen flux, and oxygen
Change crystallinity and oxygen flux system of the indium tin layer on (222) crystallization direction generally positively related.Due to oxygen
Flux and crystallinity system on (222) crystallization direction are generally positively related, and oxygen flux and conductive structure 500
Resistivity be also generally positively related, therefore the overall electricity of conductive structure 500 can be judged by crystallinity
Resistance rate.For example, if crystallinity of the indium tin oxide layer of conductive structure 500 on (222) crystallization direction is big
In 70%, then can determine that the resistivity of conductive structure 500 be high enough to prevent with the first wire 300 and/
Or the short circuit of the second wire 400.It is to be understood that the corresponding crystallinity of crystallization direction specifically described herein is only
To illustrate, the present invention is not limited thereto.
In some embodiments, as shown in Fig. 2 conductive oxide layer 510 is more leaned on than dielectric oxide layer 520
Nearly euphotic cover plate 100.Furthermore, it is understood that being first in high flux oxygen in the manufacturing process of conductive structure 500
Under gas, conductive oxide layer 510 is formed on euphotic cover plate 100, afterwards, then at conductive oxide layer 510
Upper formation dielectric oxide layer 520, therefore conductive oxide layer 510 can be than dielectric oxide layer 520 closer to euphotic cover plate
100.In other words, conductive oxide layer 510 is between dielectric oxide layer 520 and euphotic cover plate 100.
In some embodiments, as shown in Figures 1 and 2, euphotic cover plate 100 comprising inner surface 110 with
And outer surface 120.Inner surface 110 and outer surface 120 be back to.Outer surface 120 can be as user
Touch operation surface.It can be set in some embodiments, on outer surface 120 and prevent dirty, anti-fingerprint, prevent
Scrape or resist the functional layer such as dizzy.Inner surface 110 has light tight region 112 and transmission region 114.It is light tight
Region 112 and transmission region 114 are adjacent.In present embodiment, light tight region 112 is interior table
The exterior lateral area (or neighboring area) in face 110, transmission region 114 for inner surface 110 inside region (or center
Region), and surrounded by light tight region 112.In some embodiments, inner surface 110 and outer surface
120 can be the surface by chemically or physically strengthening, to lift the touch-control sensing layer to the lower section of euphotic cover plate 100
200th, the protecting effect of the first wire 300, the second wire 400 and conductive structure 500.In other words, touch
It is to be arranged at euphotic cover to control inductive layer 200, the first wire 300, the second wire 400 and conductive structure 500
On the inner surface 110 of plate 100, and it can be protected by euphotic cover plate 100.In some embodiments, no
Transmission region 112 can set light shield layer (such as ink) realize by inner surface 110, but the present invention not with
This is limited.
In some embodiments, as shown in Figures 1 and 2, conductive structure 500 is positioned at inner surface 110
Light tight region 112 in.But because the material of the conductive oxide layer 510 of conductive structure 500 can be printing opacity
Conductive material (such as tin indium oxide), and the material of dielectric oxide layer 520 can be photo-imageable dielectric (such as titanium dioxide
Silicon), therefore conductive structure 500 is printing opacity, without covering other assemblies, therefore, in some embodiments
In, conductive structure 500 can be also at least partially situated in the transmission region 114 of inner surface 110, and is helped
Expand the area of transmission region 114, that is, the visible area area of contact panel can be expanded.It is worth explanation
It is that, when conductive structure 500 is located in transmission region 114, at least a portion can position for conductive structure 500
Between the wire 300 of second electrode string 220 and first, to separate the wire 300 of second electrode string 220 and first,
So as to avoid the wire 300 of second electrode string 220 and first from directly producing coupled capacitor.In other words, when
When conductive structure 500 is located in transmission region 114, reduction second electrode string 220 and the first wire can be taken into account
The effect of 300 coupled capacitor and the effect for expanding visible area area.
In some embodiments, as shown in figure 1, the wire 300 of conductive structure 500 and first is in euphotic cover
Projection on the inner surface 110 of plate 100 is intersected, and conductive structure 500 insulate with the first wire 300, with
Exempt to cause touching signal to produce unnecessary outflow.For example, contact panel also includes insulation system 600.
Insulation system 600 is, positioned at the intersection of the wire 300 of conductive structure 500 and first, and to separate conductive structure
500 and first wire 300, so that conductive structure 500 insulate with the first wire 300.In part embodiment party
In formula, conductive structure 500 also insulate with the second wire 400 and touch-control sensing layer 200, in order to avoid so that touching
Signal produces unnecessary outflow.As long as furthermore, it is understood that conductive structure 500 is within euphotic cover plate 100
Projection system and first electrode string 210, second electrode string 220, the first wire 300 or the second on surface 110
Projection of the wire 400 on inner surface 110 intersect, then insulation system 600 can be located at conductive structure 500 with
Between first electrode string 210, second electrode string 220, the first wire 300 or the second wire 400, led with profit
Electric structure 500 and these electrode arrays and wire insulation, in case touching signal produces unnecessary outflow.
In some embodiments, as shown in figure 1, the electricity of the length direction D1 of first electrode string 210 and second
The length direction D2 of pole string 220 can be mutually perpendicular to.Furthermore, it is understood that length direction D1 can be in Fig. 1
X direction, and length direction D2 can be the y direction in Fig. 1.First electrode string 210 can include plural number
First electrode 212 and plural first connecting portion 214.These first electrodes 212 are with first connecting portion 214
Alongst D1 is alternately arranged.Each first connecting portion 214 is connected to phase on length direction D1
Two first electrodes 212 of neighbour.Similarly, second electrode string 220 can include plural second electrode 222 and multiple
Number second connecting portion 224.These second electrodes 222 and second connecting portion 224 are alongst D2
It is alternately arranged.Each second connecting portion 224 is connected to two second electrodes adjacent on length direction D2
222.In some embodiments, touch-control sensing layer 200 also includes collets 230.Collets 230 are position
In the intersection A of first electrode string 210 and second electrode string 220, and separate first electrode string 210 and the
Two electrode arrays 220, so that both mutually insulate.For example, collets 230 can be located at first electrode string
Between 210 first connecting portion 214 and the second connecting portion 224 of second electrode string 220, to separate the first company
Socket part 214 and second connecting portion 224.In some embodiments, first electrode 212, first connecting portion 214,
The material of second electrode 222 and second connecting portion 224 can be tin indium oxide or indium zinc oxide, but the present invention is not
As limit.
In some embodiments, when the material of first electrode string 210 and second electrode string 220 is indium oxide
Tin, and conductive oxide layer 510 material also be tin indium oxide when, both tin indium oxides are in (222) crystallization side
Upward crystallinity is different.Furthermore, it is understood that crystallinity of the conductive oxide layer 510 on (222) crystallization direction
It is higher, and with higher resistivity, short circuit is prevented with profit, and due to the electricity of first electrode string 210 and second
Pole string 220 simultaneously need not deliberately consider the short circuit problem between wire, and can have relatively low resistivity, carry
High touch-control sensitivity, therefore first electrode string 210 and crystallization of the second electrode string 220 on (222) crystallization direction
Degree is low than crystallinity of the conductive oxide layer 510 on (222) crystallization direction.
Fig. 4 illustrates the top view of the contact panel according to another embodiment of the invention.As shown in figure 4, this
Main Differences between embodiment and aforementioned embodiments are：The contact panel of present embodiment is also included
Earth terminal 700.Conductive structure 500 is electrically connected with earth terminal 700.Consequently, it is possible to which conductive structure 500 is not only
It can be used to reduce the coupled capacitor between the first wire 300 and the second wire 400, may further be used to as touch-control
The ground structure of panel.So as to prevent external electrostatic discharges (ESD) from influenceing touch-control sensing layer 200.
Fig. 5 illustrates the top view of the contact panel according to another embodiment of the invention.As shown in figure 5, this
Main Differences between embodiment and Fig. 4 illustrated embodiments are：Conductive structure 500a and aforesaid conductive
The shape of structure 500 is different.Specifically, conductive structure 500a is ring-type, and around touch-control sensing layer
200.Conductive structure 500a is also electrically connected with earth terminal 700, and can as contact panel ground structure.Change
Sentence is talked about, and the annular conductive structure 500a available for ground connection is around first electrode string 210 and second electrode string
220, it so can further prevent ESD from influenceing the touch controllable function of touch-control sensing layer 200.
Fig. 6 illustrates the top view of the contact panel according to another embodiment of the invention.As shown in fig. 6, this
Main Differences between embodiment and Fig. 5 illustrated embodiments are：Conductive structure 500a is not electrically connected with
Earth terminal.That is, the ungrounded purposes of conductive structure 500a loop design, and can mainly play drop
The effect of coupled capacitor between the low wire 400 of first wire 300 and second.
Fig. 7 illustrates the top view of the contact panel according to another embodiment of the invention.As shown in fig. 7, this
Main Differences between embodiment and Fig. 5 illustrated embodiments are：Present embodiment also includes external ground
Structure 800.External ground structure 800 is higher than around conductive structure 500a, and conductive structure 500a resistivity
The resistivity of external ground structure 800, can thereby be beneficial to major part ESD and export touch-control from external ground structure 800
Outside panel, and ESD is avoided to influence touch-control sensing the 200, first wire 300 of layer and the second wire 400.Enter one
For step, conductive structure 500a is all connected with earth terminal 700, and conductive structure 500a with external ground structure 800
System surround by external ground structure 800, and can as contact panel interior ground structure.Due to conductive structure
The circular touch-control sensing layers 200 of 500a, and the circular conductive structure 500a of external ground structure 800, therefore conductive structure
500a than external ground structure 800 closer to touch-control sensing layer 200.However, due to conductive structure 500a electricity
Resistance rate is higher than the resistivity of external ground structure 800, therefore when occurring ESD in contact panel, ESD relatively holds
Easily advance toward the low external ground structure 800 of resistivity, and be less susceptible to toward before the high conductive structure 500a of resistivity
Enter, consequently, it is possible to can prevent ESD from entering conductive structure 500a, and further can prevent ESD from influenceing
Touch-control sensing layer 200 circular conductive structure 500a.
In some embodiments, conductive structure 500a material is different from the material of external ground structure 800.
Furthermore, it is understood that conductive structure 500a can have conductive oxide layer 510 and dielectric such as conductive structure 500
Oxide layer 520 (as shown in Figure 2), external ground structure 800 can be metal, but the present invention is not limited.By
It may be such that conductive structure 500a has than metal in the conductive oxide layer 510 formed under high-throughout oxygen
Higher resistivity, therefore the resistivity for making conductive structure 500a can be beneficial to higher than the resistance of external ground structure 800
Rate, so as to help ESD outside external ground structure 800 export contact panel.
In some embodiments, external ground structure 800 surround the first wire 300 and the second wire 400, with
Prevent ESD from influenceing the first wire 300 and the second wire 400.Specifically, in some embodiments,
First wire 300 and the second wire 400 are to be at least partially situated at conductive structure 500a and external ground structure 800
Between.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in this hair
Within bright spirit and principle, any modification, equivalent substitution and improvements done etc. should be included in this hair
Within the scope of bright protection.
Claims (15)
1. a kind of conductive structure, it is characterised in that include：
One conductive oxide layer；And
One dielectric oxide layer, is arranged on the conductive oxide layer, the conductive oxide layer and the dielectric oxide layer
Overall sheet resistance R meets 105 ohm/side≤R≤135 ohm/side.
2. conductive structure as claimed in claim 1, it is characterised in that the conductive oxide layer is in (222) crystallization side
Upward crystallinity is more than 70% and less than 100%.
3. conductive structure as claimed in claim 1, it is characterised in that the material of the conductive oxide layer is comprising saturating
Bright zinc oxide, tin indium oxide, indium zinc oxide, indium gallium zinc, aluminum zinc oxide, indium oxide aluminium zinc
Or above-mentioned any combination.
4. the conductive structure as described in claim 1 or 3, it is characterised in that the dielectric oxide layer includes silica
Compound or organic oxygen compound.
5. conductive structure as claimed in claim 1, it is characterised in that the conductive oxide layer is a tin indium oxide
Layer, the dielectric oxide layer is a silicon dioxide layer, and the indium tin oxide layer contacts with the silicon dioxide layer.
6. the conductive structure as described in claim 1 or 5, it is characterised in that the conductive oxide layer passes through sputter
Formed, the flow of oxygen is between 20sccm and 50sccm in the sputtering process.
7. a kind of contact panel, it is characterised in that include：
One euphotic cover plate；
Plural electrode array, is arranged on the euphotic cover plate, those electrode array mutually insulateds；
Complex lead, is electrically connected those electrode arrays；And
At least just like the conductive structure any one of claim 1 to 6, the conductive structure and those electricity
Pole is gone here and there and those wire insulations, and the conductive structure at least a portion system between those wires,
Or between the one of those electrode arrays and the one of those wires.
8. contact panel as claimed in claim 7, it is characterised in that the conductive oxide layer is than the dielectric oxidation
Layer is closer to the euphotic cover plate.
9. contact panel as claimed in claim 7, it is characterised in that the conductive structure is ring-type, and ring
Around those electrode arrays.
10. contact panel as claimed in claim 7, it is characterised in that further include an earth terminal, conduction knot
Structure is electrically connected with the earth terminal.
11. contact panel as claimed in claim 7, it is characterised in that further include an external ground structure, surround
The resistivity of the conductive structure, the wherein conductive structure is higher than the resistivity of the external ground structure.
12. contact panel as claimed in claim 7, it is characterised in that the conductive structure is transparent, part
Or it is entirely located in the visible area of the contact panel.
13. a kind of contact panel, it is characterised in that include：
One euphotic cover plate；
One touch-control sensing layer, is arranged on the euphotic cover plate；
Ground structure in one, is arranged on the euphotic cover plate, and around the touch-control sensing layer, and with the touch-control
Inductive layer insulate, and the sheet resistance R of the interior ground structure meets 105 ohm/side≤R≤135 ohm/side；
And
One external ground structure, around the interior ground structure, the wherein resistivity of the interior ground structure is outer higher than this
The resistivity of ground structure.
14. contact panel as claimed in claim 13, it is characterised in that the interior ground structure is conductive comprising one
Oxide layer and a dielectric oxide layer, the dielectric oxidation series of strata are arranged on the conductive oxide layer, wherein
Crystallinity of the conductive oxide layer on (222) crystallization direction is more than 70%.
15. contact panel as claimed in claim 13, it is characterised in that the conductive structure is transparent, portion
Part or the visible area for being entirely located in the contact panel.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610291786.6A CN107329635A (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
| TW105213081U TWM537258U (en) | 2016-04-28 | 2016-08-26 | Conductive structure and touch panel using the same |
| TW105127537A TW201810303A (en) | 2016-04-28 | 2016-08-26 | Conductive structure and applications thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610291786.6A CN107329635A (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107329635A true CN107329635A (en) | 2017-11-07 |
Family
ID=58608098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610291786.6A Pending CN107329635A (en) | 2016-04-28 | 2016-04-28 | Conductive structure and contact panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107329635A (en) |
| TW (2) | TWM537258U (en) |
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| CN1977343A (en) * | 2004-08-17 | 2007-06-06 | 东丽株式会社 | Composite transparent conductive substrate for touch panel and touch panel |
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| CN102985898A (en) * | 2010-07-09 | 2013-03-20 | 捷恩智株式会社 | Transparent conductive film and method for producing same |
| JP2013175240A (en) * | 2008-12-26 | 2013-09-05 | Sumitomo Metal Mining Co Ltd | Capacitance type touch panel and liquid crystal display device provided with touch panel |
| US20140227560A1 (en) * | 2013-02-12 | 2014-08-14 | Lg Chem, Ltd. | Conductive layer and preparation method for conductive layer |
| CN203799347U (en) * | 2014-01-09 | 2014-08-27 | 宸鸿科技(厦门)有限公司 | Touch panel |
| WO2015115237A1 (en) * | 2014-01-28 | 2015-08-06 | 株式会社カネカ | Substrate with transparent electrode and method for producing same |
| CN205721723U (en) * | 2016-04-28 | 2016-11-23 | 宸美（厦门）光电有限公司 | Conductive structure and contact panel |
-
2016
- 2016-04-28 CN CN201610291786.6A patent/CN107329635A/en active Pending
- 2016-08-26 TW TW105213081U patent/TWM537258U/en not_active IP Right Cessation
- 2016-08-26 TW TW105127537A patent/TW201810303A/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1977343A (en) * | 2004-08-17 | 2007-06-06 | 东丽株式会社 | Composite transparent conductive substrate for touch panel and touch panel |
| CN101630082A (en) * | 2008-07-03 | 2010-01-20 | 苹果公司 | Display with dual-function capacitive elements |
| JP2013175240A (en) * | 2008-12-26 | 2013-09-05 | Sumitomo Metal Mining Co Ltd | Capacitance type touch panel and liquid crystal display device provided with touch panel |
| CN102985898A (en) * | 2010-07-09 | 2013-03-20 | 捷恩智株式会社 | Transparent conductive film and method for producing same |
| US20120026128A1 (en) * | 2010-07-30 | 2012-02-02 | Chimei Innolux Corporation | Display system having a capacitive touch panel and manufacturing methods of the same |
| US20140227560A1 (en) * | 2013-02-12 | 2014-08-14 | Lg Chem, Ltd. | Conductive layer and preparation method for conductive layer |
| CN203799347U (en) * | 2014-01-09 | 2014-08-27 | 宸鸿科技(厦门)有限公司 | Touch panel |
| WO2015115237A1 (en) * | 2014-01-28 | 2015-08-06 | 株式会社カネカ | Substrate with transparent electrode and method for producing same |
| CN205721723U (en) * | 2016-04-28 | 2016-11-23 | 宸美（厦门）光电有限公司 | Conductive structure and contact panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201810303A (en) | 2018-03-16 |
| TWM537258U (en) | 2017-02-21 |
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