CN107305778A - The pre-charge method of holder circuit and holder circuit - Google Patents
The pre-charge method of holder circuit and holder circuit Download PDFInfo
- Publication number
- CN107305778A CN107305778A CN201610239879.4A CN201610239879A CN107305778A CN 107305778 A CN107305778 A CN 107305778A CN 201610239879 A CN201610239879 A CN 201610239879A CN 107305778 A CN107305778 A CN 107305778A
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- data wire
- switch element
- repository
- circuit
- holder circuit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
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- Engineering & Computer Science (AREA)
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Abstract
The present invention provides the pre-charge method of a kind of holder circuit and holder circuit, and the holder circuit includes one first repository, and one first sensor amplifier is connected by one first data wire；One second repository, one second sensor amplifier is connected by one second data wire；One first switching element, one end of the first switching element connects first data wire, and the other end of the first switching element connects second data wire；And one control circuit, connect the control end of the first switching element, control the conducting and disconnection of the first switching element.The pre-charge method includes setting first switching element, and one end of the first switching element connects first data wire, and the other end of the first switching element connects second data wire；When first repository perform read or write-in pre-charge operation, and second repository is when operating in idle state, by the switching elements conductive.
Description
Technical field
The relevant holder circuit of the present invention, particularly relevant holder circuit is reading, write-in when the circuit that is pre-charged and
Method.
Background technology
Requirement more and more higher of the holder circuit to service speed now, the various actions inside holder circuit are consumed
Among the time taken, the time that holder circuit is pre-charged (pre-charge) after reading or write-in is important design ginseng
Number.General holder circuit is in the operation read or write, it is necessary to first data wire used in reading or write-in
High voltage level is charged in advance, for example, being next exactly that will write institute after holder circuit is performing write activity
The data wire used is charged to high voltage level in advance, then performs the action of next reading or write-in.
And in some cases, if the action of above-mentioned precharge is not performed correctly, in the action of next reading
During execution, it is possible to cause the data read out incorrect；Or when above-mentioned holder circuit is in the continuous reading of processing
Action when because precharge action do not perform correctly, cause used in data wire voltage level it is more next
It is lower, cause the sensor amplifier for the above-mentioned holder circuit for connecting above-mentioned data wire to occur misoperation.
The content of the invention
In view of this, the present invention provides the pre-charge method of a kind of holder circuit and holder circuit, to strengthen storage
The performance of the pre-charge circuit of latch circuit, and then avoid the action of above-mentioned precharge from not being properly executed.
According to one embodiment of the invention, there is provided a kind of holder circuit, including one first repository (memory
Bank), one first sensor amplifier is connected by one first data wire；One second repository, passes through one second data
Line connects one second sensor amplifier；One first switching element, one end of the first switching element connects first data
Line, and the other end of the first switching element connects second data wire；And a control circuit, connect this and first open
The control end of element is closed, the conducting and disconnection of the first switching element is controlled.
According to another embodiment of the present invention, above-mentioned holder circuit, in above-mentioned holder circuit to first storage
When the pre-charge operation and second repository that storehouse performs reading or write operate in idle state, the control circuit should
First switching element is turned on.
According to another embodiment of the present invention there is provided a kind of pre-charge method of holder circuit, the holder circuit
One first repository connects one first sensor amplifier by one first data wire, and the one second of the holder circuit stores up
Warehousing, one second sensor amplifier is connected by one second data wire, and this method includes setting a first switching element,
One end of the first switching element connects first data wire, and the other end of the first switching element connects second number
According to line；And when the pre-charge operation of first repository execution reading or write-in, and second repository operates in the spare time
During configuration state, the first switching element is turned on.
The beneficial effects of the present invention are when repository operation is in idle state, and repository precharge to be performed is dynamic
When making, control circuit is in addition to the action by switching elements conductive to perform precharge, and device of the embodiment of the present invention is more
Extra precharge path can be provided, offer is provided and is more quickly pre-charged speed than common technology, so as to ensure
The incorrect possibility of data is read out in the correct execution of precharge, reduction.
Brief description of the drawings
Figure 1A is the schematic diagram of the holder circuit blocks according to one embodiment of the invention.
Figure 1B is the schematic diagram of the holder circuit blocks according to one embodiment of the invention.
Fig. 2A is the schematic diagram of the holder circuit blocks according to one embodiment of the invention.
Fig. 2 B are the precharge timing diagrams of the holder circuit according to one embodiment of the invention.
Drawing reference numeral：
100A, 100B, 200 holder circuits
101st, 102,201,202 repository
1011st, 1012,2011,2013,2012,2014 data wire
103B shares sensor amplifier
1031st, 1032,2031,2032 sensor amplifier
104th, 204 control circuit
110-130,210-260 switch element
T given times
T1 time points
Vdd voltage sources
Embodiment
For the above objects, features and advantages of the present invention can be become apparent, it is cited below particularly go out the present invention specific reality
Example is applied, and coordinates institute's accompanying drawings, is described in detail below.
Figure 1A is the schematic diagram of the holder circuit 100A according to one embodiment of the invention.Holder circuit 100A
Including a repository (memory bank) 101；One repository 102；One sensor amplifier 1031, passes through a data wire
1011 connection repositories 101；One sensor amplifier 1032, repository 102 is connected by a data wire 1012；One
Switch element 110, one end connection data wire 1011 of switch element 110, and the other end connection of switch element 110
Data wire 1012；One switch element 120, one end connection data wire 1011 of switch element 120, and switch element
120 other end connects a voltage source Vdd；One switch element 130, one end connection data wire of switch element 130
1012, and the other end connection voltage source Vdd of switch element 130；And one control circuit 104, respectively connection open
Close element 110,120,130 control end, and the conducting of unit control switch element 110,120,130 and
Disconnect.
In general, when holder circuit performs reading or write activity to a repository, can be in reading or write activity
After the completion of, the action of a precharge is first carried out, then carry out the action of next reading or write-in.According to conventional holder
The operation of the precharge of circuit, when holder circuit 100A is completed once via data wire 1011 to repository 101
After reading or write activity, control circuit 104 can only turn on switch element 120, and using makes data wire 1011 exist
Before reading next time or write activity, current potential is charged to by a high voltage level by voltage source Vdd in advance and (is e.g., from about equal to
Voltage source Vdd voltage level).In addition, according to the operating and setting of conventional holder circuit, when holder circuit
One repository is operated in idle state, and the data wire that above-mentioned repository is connected to a sensor amplifier can be charged to dimension
Hold in above-mentioned high voltage level, such as when holder circuit 100A repository 101 is operated in idle state, open
Closing element 120 can operate in conducting state, and the current potential of data wire 1011 can maintain above-mentioned high voltage level.
In one embodiment of this invention, when repository 102 is operated in idle state, and repository 101 is intended to perform
When stating the action of precharge, circuit 104 is controlled in addition to switch element 120 to be turned on to the action to perform precharge,
More the switch element 110 set by the present invention can be turned on to provide extra precharge path, use offer than conventional
Technology is more quickly pre-charged speed.More specifically, when repository 102 is operated in idle state, and store
Storehouse 101 complete once to read or write activity after, control circuit 104 can turn on switch element 120, use allowing number
Line precharge is entered by voltage source Vdd according to line 1011, after a given time, control circuit 104 again will switch member
Part 110 is turned on, and data wire 1011 by voltage source Vdd and is maintained the data of above-mentioned high voltage level simultaneously
Line 1012 enters the action of line precharge, and then promotes the ability and speed of holder circuit 100A precharge.
In an alternative embodiment of the invention, when repository 102 is operated in idle state, and repository 101 is completed once
Read or write activity after, control circuit 104 first can also turn on switch element 110, use allowing data wire 1011
First pass through and maintain the data wire 1012 of above-mentioned high voltage level and enter line precharge, and will be opened again after a given time
Close element 120 to turn on, make data wire 1011 while entering line precharge by data wire 1012 and voltage source Vdd.
Now, because the cross-pressure between data wire 1011 and the data wire 1012 for maintaining high levle is larger, therefore more previous reality
Apply for example, can further increase the speed of holder circuit 100A precharge.
In one embodiment, sensor amplifier 1031,1032 can be integrated into one and share sensor amplifier, such as Figure 1B
Shown holder circuit 100B shared sensor amplifier 103B.In one embodiment, when repository 102 is operated
In idle state, and repository 101 is when being intended to perform the action of above-mentioned precharge, and control circuit 104 can first will switch member
Part 120 turns on a given time, then switch element 110 is turned on.In another embodiment, when repository 102 is grasped
Work is when idle state, and repository 101 are intended to perform the action of above-mentioned precharge, and control circuit 104 will first can be switched
Element 110 turns on a given time, then switch element 120 is turned on.In other embodiments, when repository 102
Operation is when idle state, and repository 101 are intended to perform the action of above-mentioned precharge, and control circuit 104 simultaneously can will
Switch element 110,120 is turned on.
In one embodiment, due to the setting of switch element 110, the preliminary filling of repository 101,102 can be increased simultaneously
Power path.Therefore under identical precharge capability, a switch element 110 is set, can reduce by two switches simultaneously
The component size of element 120,130 (switch element for being used for the pre-charge operation of repository 101,102 in the past), enters
And reduce the overall circuit size of holder circuit.And in another embodiment, by the setting of switch element 110,
The precharge speed for increasing holder circuit can more be reached simultaneously and the overall circuit size of holder circuit is reduced
Effect.
Fig. 2A is the schematic diagram of the holder circuit 200 according to one embodiment of the invention.Holder circuit 200 includes
One repository 201；One repository 202；One sensor amplifier 2031, is connected by data wire 2011,2013 and stored up
Warehousing 201；One sensor amplifier 2032, repository 202 is connected by data wire 2012,2014；One switch member
Part 210, one end connection data wire 2011 of switch element 210, and the other end connection data wire of switch element 210
2012；One switch element 220, one end connection data wire 2013 of switch element 220, and switch element 220 is another
One end connects data wire 2014；One switch element 230, one end connection data wire 2011 of switch element 230, and
The other end of switch element 230 connects a voltage source Vdd；One switch element 240, one end of switch element 240 connects
Meet data wire 2012, and the other end connection voltage source Vdd of switch element 240；One switch element 250, switch member
One end connection data wire 2013 of part 250, and the other end connection voltage source Vdd of switch element 250；One switch
Element 260, one end connection data wire 2014 of switch element 260, and the other end connection voltage of switch element 260
Source Vdd；And a control circuit 204, connecting valve element 210,220,230,240,250,260 respectively
Control end (grid), and the conducting of unit control switch element 210,220,230,240,250,260 with
And disconnect.In this embodiment, data wire 2013 is the oppisite phase data for transmitting the data that data wire 2011 is transmitted,
And data wire 2014 is the oppisite phase data for transmitting the data that data wire 2012 is transmitted.In this embodiment, member is switched
Part 210,220,230,240,250,260 is p type field effect transistor.
In this embodiment, repository 202 is operated in idle state, therefore switch element 240,260 has been switched on,
And the current potential of data wire 2012,2014 maintains a high voltage level (the voltage position e.g., from about equal to voltage source Vdd
It is accurate).When repository 201 is intended to perform the action of above-mentioned precharge, control circuit 204 can be by switch element 230,250
Conducting, uses the action for making data wire 2011,2013 enter line precharge by voltage source Vdd respectively, set one
After time, control circuit 204 again turns on switch element 210,220, makes data wire 2011 simultaneously by data wire
2012 and voltage source Vdd enters the action of line precharge；Data wire 2013 passes through data wire 2014 and electricity simultaneously
Potential source Vdd enters the action of line precharge, and then promotes the ability of the precharge of holder circuit 200 and increase storage
The speed of the precharge of latch circuit 200.
In another embodiment, when repository 201 is intended to perform the action of above-mentioned precharge, control circuit 204 can be by
Switch element 210,220 is turned on, and using makes data wire 2011,2013 enter respectively by data wire 2012,2014
The action of line precharge, after a given time, control circuit 204 again turns on switch element 230,250, makes
Data wire 2011 enters the action of line precharge by data wire 2012 and voltage source Vdd simultaneously；Data wire 2013
Enter the action of line precharge by data wire 2014 and voltage source Vdd simultaneously.Now, due to data wire 2011,
2013 and maintain high levle data wire 2012,2014 between cross-pressure it is larger, therefore compared with previous embodiment for,
The speed of the precharge of holder circuit 200 can further be increased.In addition, in other embodiments of the present invention, controller
Also switch element 210,220,230 and 250 can be turned on simultaneously, makes data wire 2011 directly simultaneously by data
Line 2012 and voltage source Vdd enter the action of line precharge；Data wire 2013 directly passes through data wire 2014 simultaneously
And voltage source Vdd enters the action of line precharge.
Fig. 2 B be according to one embodiment of the invention holder circuit 200 to repository 201 perform read or write when
Precharge timing diagram.With reference to Fig. 2A, in this embodiment, repository 202 is operated in idle state, therefore is opened
Element 240,260 is closed to be switched on, and the current potential of data wire 2012,2014 maintains a high voltage level and (not painted
Show, in this embodiment equal to voltage source Vdd voltage level)；Repository 201 has just performed write activity, and
The voltage of data wire 2011 is a low-voltage level (0V), and the data wire of the oppisite phase data of transmission data wire 2011
2013 voltage is above-mentioned high voltage level.When repository 201 performs the action of above-mentioned precharge in time point t1,
Control circuit 204 first the grid voltage of switch element 210,220 is dragged down, make switch element 210,220 conducting with
Data wire 2011,2013 is set to enter the action of line precharge by data wire 2012,2014 respectively, in a given time
After T, control circuit 204 again drags down the grid voltage of switch element 230,250, makes switch element 230,250
Turn on so that data wire 2011,2013 carries out preliminary filling by data wire 2012,2014 and voltage source Vdd respectively
The action of electricity.
In one embodiment, sensor amplifier 2031,2032 can be integrated into one and share sensor amplifier.Implement one
In example, repository 202 is operated in idle state, therefore switch element 240,260 has been switched on, and data wire 2012,
2014 current potential maintains above-mentioned high voltage level, when repository 201 is intended to perform the action of above-mentioned precharge, control
Switch element 230,250 first can be turned on a given time by circuit 204 processed, then switch element 210,220 is turned on.
In another embodiment, when repository 202 is operated in idle state, and repository 201 is intended to perform above-mentioned precharge
During action, switch element 210,220 also first can be turned on a given time by control circuit 204, then by switch element
230th, 250 conducting.In other embodiments, when repository 202 is operated in idle state, and repository 201 is intended to
When performing the action of above-mentioned precharge, control circuit 104 simultaneously can lead switch element 210,220,230,250
It is logical.
In one embodiment, above-mentioned holder circuit 100A, 100B, 200 can be dynamic random access memory electricity
Road, static random access memory circuit, flash memory circuit or resistive random access holder circuit, but the present invention is simultaneously
It is not only restricted to this.In one embodiment, above-mentioned switch element 110~130,210~260 can be p-type or N-type effect
Transistor unit is answered, but the present invention is not limited to this.
The beneficial effects of the present invention are when repository operation is in idle state, and repository precharge to be performed is dynamic
When making, control circuit more can carry the present invention in addition to the action by switching elements conductive to perform precharge
For extra precharge path, offer is provided and is more quickly pre-charged speed than common technology, so as to ensure precharge
Correct execution, reduction read out the incorrect possibility of data.
Though the present invention is disclosed above with preferred embodiment, so it is not limited to the scope of the present invention, any this area
Person skilled without departing from the spirit and scope of the present invention, when a little change and retouching, therefore this hair can be done
Bright protection domain is worked as to be defined depending on claim.
Claims (11)
1. a kind of holder circuit, it is characterised in that including：
One first repository, one first sensor amplifier is connected by one first data wire；
One second repository, one second sensor amplifier is connected by one second data wire；
One first switching element, one end of the first switching element connects first data wire, and the first switching element
The other end connect second data wire；And
One control circuit, connects the control end of the first switching element, controls the conducting of the first switching element and breaks
Open.
2. holder circuit as claimed in claim 1, it is characterised in that in the holder circuit to first storage
When the pre-charge operation and second repository that storehouse performs reading or write operate in idle state, the control circuit should
First switching element is turned on.
3. holder circuit as claimed in claim 1, it is characterised in that further include：
One the 3rd data wire, connects first repository and first sensor amplifier；
One the 4th data wire, connects second repository and second sensor amplifier；And
One second switch element, one end of the second switch element connects the 3rd data wire, and the second switch element
The other end connect the 4th data wire；
Wherein the 3rd data wire, transmits the oppisite phase data of the data of first data line transfer, and the 4th data wire,
Transmit the oppisite phase data of the data of second data line transfer；
Wherein the control circuit, connects the control end of the second switch element, control the conducting of the second switch element with
And disconnect.
4. holder circuit as claimed in claim 3, it is characterised in that further include：
One the 3rd switch element, one end of the 3rd switch element connects first data wire, and the 3rd switch element
The other end connect a voltage source；
One the 4th switch element, one end of the 4th switch element connects second data wire, and the 4th switch element
The other end connect the voltage source；
One the 5th switch element, one end of the 5th switch element connects the 3rd data wire, and the 5th switch element
The other end connect the voltage source；And
One the 6th switch element, one end of the 6th switch element connects the 4th data wire, and the 6th switch element
The other end connect the voltage source；
Wherein, the control circuit connect respectively this third and fourth, the control end of five, six switch elements, and control electricity
Road can unit control first, second, third and fourth, five, six switch element conducting and disconnection.
5. holder circuit as claimed in claim 4, it is characterised in that when second repository operates in idle shape
During state, the control circuit is by the four, the six switching elements conductives；
Wherein, the pre-charge operation for reading or writing and second storage are performed to first repository in the holder circuit
When warehousing operates in idle state, the control circuit is indivedual by first, second and third, five switching elements conductive.
6. holder circuit as claimed in claim 5, it is characterised in that in the holder circuit to first storage
When the pre-charge operation and second repository that storehouse performs reading or write operate in idle state, the control circuit should
First, second and thirdth, the order of five switching elements conductives, be first by first and second switching elements conductive, then by this
3rd, five switching elements conductive.
7. holder circuit as claimed in claim 1, it is characterised in that the holder circuit is dynamic randon access
Holder circuit, static random access memory circuit, flash memory circuit or resistive random access holder circuit.
8. holder circuit as claimed in claim 1, it is characterised in that first sensor amplifier and this second
Sensor amplifier can be integrated into one and share sensor amplifier.
9. a kind of pre-charge method of holder circuit, it is characterised in that one first repository of the holder circuit leads to
Cross one first data wire and connect one first sensor amplifier, and one second repository of the holder circuit passes through one the
Two data wires connect one second sensor amplifier, and this method includes：
First switching element is set, and one end of the first switching element connects first data wire, and first switch member
The other end of part connects second data wire；And
When the pre-charge operation that first repository execution is read or write, and second repository operates in idle state
When, by the switching elements conductive.
10. the pre-charge method of holder circuit as claimed in claim 9, it is characterised in that further include：
While first repository starts to perform the pre-charge operation for reading or writing, by the switching elements conductive.
11. the pre-charge method of holder circuit as claimed in claim 9, it is characterised in that first sensing is put
Big device and second sensor amplifier can be integrated into one and share sensor amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610239879.4A CN107305778B (en) | 2016-04-18 | 2016-04-18 | Memory circuit and precharge method of memory circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610239879.4A CN107305778B (en) | 2016-04-18 | 2016-04-18 | Memory circuit and precharge method of memory circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107305778A true CN107305778A (en) | 2017-10-31 |
| CN107305778B CN107305778B (en) | 2020-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610239879.4A Active CN107305778B (en) | 2016-04-18 | 2016-04-18 | Memory circuit and precharge method of memory circuit |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101253570A (en) * | 2005-09-01 | 2008-08-27 | 飞思卡尔半导体公司 | Memory with robust data reading and method for reading data |
| US20140036593A1 (en) * | 2010-07-06 | 2014-02-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, memory systems and methods of performing read operations |
| CN104160453A (en) * | 2012-03-27 | 2014-11-19 | 苹果公司 | Memory with redundant sense amplifier |
| CN104616692A (en) * | 2013-11-05 | 2015-05-13 | 旺宏电子股份有限公司 | Integrated circuit of memory, and operating method thereof |
| CN204680377U (en) * | 2015-04-01 | 2015-09-30 | 山东华芯半导体有限公司 | A kind of RRAM sense amplifier |
| US20150301885A1 (en) * | 2014-04-22 | 2015-10-22 | Sandisk Technologies Inc. | Neighboring Word Line Program Disturb Countermeasure For Charge-Trapping Memory |
| CN105469827A (en) * | 2014-09-25 | 2016-04-06 | 旺宏电子股份有限公司 | Sensing method for flash memory and memory element thereof |
-
2016
- 2016-04-18 CN CN201610239879.4A patent/CN107305778B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101253570A (en) * | 2005-09-01 | 2008-08-27 | 飞思卡尔半导体公司 | Memory with robust data reading and method for reading data |
| US20140036593A1 (en) * | 2010-07-06 | 2014-02-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, memory systems and methods of performing read operations |
| CN104160453A (en) * | 2012-03-27 | 2014-11-19 | 苹果公司 | Memory with redundant sense amplifier |
| CN104616692A (en) * | 2013-11-05 | 2015-05-13 | 旺宏电子股份有限公司 | Integrated circuit of memory, and operating method thereof |
| US20150301885A1 (en) * | 2014-04-22 | 2015-10-22 | Sandisk Technologies Inc. | Neighboring Word Line Program Disturb Countermeasure For Charge-Trapping Memory |
| CN105469827A (en) * | 2014-09-25 | 2016-04-06 | 旺宏电子股份有限公司 | Sensing method for flash memory and memory element thereof |
| CN204680377U (en) * | 2015-04-01 | 2015-09-30 | 山东华芯半导体有限公司 | A kind of RRAM sense amplifier |
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| CN107305778B (en) | 2020-05-01 |
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