CN107304473A - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN107304473A CN107304473A CN201610246619.XA CN201610246619A CN107304473A CN 107304473 A CN107304473 A CN 107304473A CN 201610246619 A CN201610246619 A CN 201610246619A CN 107304473 A CN107304473 A CN 107304473A
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- CN
- China
- Prior art keywords
- pallet
- reaction chamber
- pedestal
- shutter
- chip
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Reaction chamber and semiconductor processing equipment that the present invention is provided, it includes pallet, pedestal shutter and support member, wherein, pallet is used to carry multiple chips.Pedestal is used for bearing tray, and the pedestal is liftable, carries out technique to rise to process station, or drop to the operation that loading position pick and place pallet.Shutter is placed on pallet when pedestal is located at process station, and the multiple chips being provided with shutter on multiple through holes, multiple through holes and pallet are corresponded, and shutter is used for the chip-free region for blocking pallet.Support member is used for when pedestal leaves process station, supports shutter, so that shutter is separated with pallet.The reaction chamber that the present invention is provided, it can be avoided when carrying out prerinse to chip, the contaminated problem of wafer surface.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular it relates to a kind of reaction chamber
And semiconductor processing equipment.
Background technology
Semiconductor processing equipment is the common equipment for processing semiconductor devices, and it is being carried out such as
In the technical process such as etching, sputtering and chemical vapor deposition, in order to improve the quality of product,
Implement before depositing operation, first have to carry out prerinse (Preclean) to chip, to remove crystalline substance
The impurity such as the oxide on piece surface.The general principle of general pre-cleaning cavity is：It will be passed through clear
The purge gas of argon gas, helium or the hydrogen washed in chamber etc. excites to form plasma,
To be chemically reacted to chip and physical bombardment, so as to remove the impurity of wafer surface.
It is general to be supported using pedestal with fixed wafer etc. in addition, during technique is carried out
Workpiece to be machined, and carry it and be processed into reaction chamber.In order to improve plasma
The production efficiency of process equipment, reduces production cost, for 2 cun, 4 cun or 6 cun etc. of processing
Small size chip when, typically multiple chips are also secured on large-sized pallet so that
Realize and technique is carried out simultaneously to workpieces to be machined such as multiple chips.
Fig. 1 is a kind of existing top view for the structure for being used for support and fixed tray.Fig. 2
For the sectional view of structure in Fig. 1.Also referring to Fig. 1 and Fig. 2, the structure include pressure ring 1,
Pallet 2 and pedestal 10, wherein, pedestal 10 is arranged in reaction chamber, for bearing tray
2.Pallet 2 is used to carry multiple chips 3, and circumferencial direction of the multiple chips 3 along pallet 2
It is uniformly distributed.Pressure ring 1 is fixed on pedestal by pushing down the edge of pallet 2 by pallet 2
On 10.
, it is necessary to repeat above-mentioned pallet 2 being transported to reaction chamber during technique is carried out
Interior carry out depositing operation, i.e. after the depositing operation of a collection of chip is completed, by pallet 2
Taken out in autoreaction chamber, and reappose new a collection of chip, be then first put into prerinse chamber
Indoor carry out pre-cleaning processes, are put into reaction chamber and carry out depositing operation afterwards.But,
Carry out depositing operation when, due to the chip-free region A in pallet 2 also can deposited metal film,
When pallet 2 carries next group chip and carries out pre-cleaning processes, the ion of purge gas is not only
Wafer surface can be bombarded, while also bombarding the chip-free region A of pallet 2, causes to be deposited on
Metallic atom on the region is shelled out, and part metals atom may be deposited on chip 3
On, so as to cause wafer surface to be contaminated.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that
A kind of reaction chamber and semiconductor processing equipment, it can avoid carrying out prerinse to chip
When, the contaminated problem of wafer surface.
To realize that the purpose of the present invention provides a kind of reaction chamber, including pallet and pedestal,
The pallet is used to carry multiple chips；The pedestal is used to carry the pallet, and the base
Seat is liftable, carries out technique to rise to process station, or drop to loading position to enter
Row picks and places the operation of the pallet, in addition to shutter and support member, wherein, the shutter
When the pedestal is located at the process station, it is placed on the pallet, and in the shutter
On be provided with multiple through holes, the multiple through hole and a pair of multiple chips 1 on the pallet
Should, the shutter is used for the chip-free region for blocking the pallet；The support member is used for
When the pedestal leaves the process station, support the shutter so that the shutter with
The pallet is separated.
It is preferred that, the pallet is made using carborundum.
It is preferred that, the pallet is made using aluminium alloy.
It is preferred that, surface hard anode oxidation processing is carried out to the pallet.
It is preferred that, the reaction chamber also includes grommet, for protecting the reaction chamber
Inwall；The lower end of the grommet has annular brace portion, and the annular brace portion is used as the branch
Support member.
It is preferred that, in the bottom of the shutter, and it is corresponding with the annular brace portion
Annular groove is provided with position, the annular brace portion leaves the technique position in the pedestal
When putting, in the annular groove.
It is preferred that, the support member includes at least three support columns, and is circumferentially positioned at described
Around pedestal.
It is preferred that, correspond status in the bottom of the shutter, and with each support column
The place of putting is provided with least three grooves, and each described support column leaves the technique in the pedestal
During position, correspondingly in each groove.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, wraps
Pre-cleaning cavity and reaction chamber are included, wherein, the pre-cleaning cavity is used to carry out in advance chip
Cleaning, to remove the impurity of wafer surface；The reaction chamber is used for complete in the chip
Into after the pre-cleaning processes, technique is carried out to the chip, the reaction chamber is employed
The above-mentioned reaction chamber that the present invention is provided.
It is preferred that, the reaction chamber is used for physical vapor deposition chamber or magnetron sputtering chamber
Room.
The invention has the advantages that：
The reaction chamber that the present invention is provided, its pedestal be located at process station when, by by
Shutter blocks the chip-free region of pallet, i.e. multiple through holes are provided with shutter, and
And multiple through holes are corresponded with multiple chips on pallet, deposition work can carried out to chip
During skill, it is to avoid the upper metallic film of chip-free region deposition of pallet.Meanwhile, leave work in pedestal
During skill position, by the way that shutter by supports support shutter, can be made to be separated with pallet,
So that when the pallet for carrying next group chip is transported into pre-cleaning cavity progress prerinse,
Because metallic film is not present in the chip-free region of pallet, wafer surface can be avoided to be contaminated.
The semiconductor processing equipment that the present invention is provided, its by using the present invention provide it is above-mentioned
Reaction chamber, can be avoided when carrying out prerinse to chip, the contaminated problem of wafer surface.
Brief description of the drawings
Fig. 1 is a kind of existing top view for the structure for being used for support and fixed tray；
Fig. 2 is the sectional view of structure in Fig. 1；
Fig. 3 A are the sectional view of reaction chamber provided in an embodiment of the present invention；
Fig. 3 B are the partial sectional view of the reaction chamber when pedestal is located at process station；
Fig. 3 C are the partial sectional view of the reaction chamber when pedestal leaves process station；
Fig. 4 be the embodiment of the present invention in block piece top view.
Embodiment
To make those skilled in the art more fully understand technical scheme, tie below
Accompanying drawing is closed to be described in detail come the reaction chamber and semiconductor processing equipment for providing the present invention.
Fig. 3 A are the sectional view of reaction chamber provided in an embodiment of the present invention.Fig. 3 B are in base
The partial sectional view of reaction chamber when seat is located at process station.Fig. 3 C are to leave technique in pedestal
The partial sectional view of reaction chamber during position.Fig. 4 bows for the block piece in the embodiment of the present invention
View.Also referring to Fig. 3 A- Fig. 4, reaction chamber 100 include pallet 103, pedestal 102,
Pedestal elevating mechanism 101, shutter 104 and support member.Wherein, pallet 103 is used to carry
Multiple chips 108.Pedestal 102 is used for bearing tray 103, and pedestal elevating mechanism 101 is used for
Drive pedestal 102 to rise to process station E and carry out technique, or drop to loading position
Row picks and places the operation of pallet 103.
When pedestal 102 is located at process station E, shutter 104 is placed on pallet 103,
As shown in Figure 3 B.Moreover, multiple through holes are provided with shutter 104, and it is multiple logical
Hole is corresponded with multiple chips 108 on pallet 103, furtherly, the quantity of through hole with
The quantity for being used to place chip on pallet 103 is consistent, and position is corresponded, so as to make
The upper surface of each chip 108 is exposed in process environments.
Shutter 104 is used for the chip-free region B for blocking pallet 103, as shown in Figure 4.
The chip-free region of so-called pallet, refers to that tray upper surface does not carry the region of chip.Pass through
The chip-free region B of pallet 103 is blocked by shutter 104, can be entered to chip 108
During row depositing operation, it is to avoid metallic film in the chip-free region B depositions of pallet 103.
When pedestal 102 leaves process station E, support member 107 is used to support shutter 104,
So that shutter 104 is separated with pallet 103, as shown in Figure 3 C.So, it will carry
When the pallet 103 for having next group chip is transported to pre-cleaning cavity progress prerinse, due to pallet
Chip-free region B be not present metallic film, can avoid wafer surface be contaminated.
In the present embodiment, reaction chamber 100 also includes grommet, for protecting reaction chamber
100 inwall is not by plasma etching.The grommet is by mutually nested upper grommet 105 with
Grommet 106 is constituted, and upper grommet 105 is located at the inner side of lower grommet 106.Wherein, lower grommet
106 lower end has annular brace portion 107, and the annular brace portion 107 is used as support member,
Pedestal 102 supports shutter 104 when leaving process station E.Annular brace portion 107 it is specific
As shown in Figure 3A, it is bent to form " barb to structure from the lower end of lower grommet 106 to its inner side
Shape ".
It is preferred that, in the bottom of shutter 104, and it is corresponding with annular brace portion 107
Annular groove is provided with position, annular brace portion 107 leaves process station E in pedestal 102
When, in the annular groove, so as to realize stably support shutter 104.
It should be noted that Fig. 3 A schematically show only shutter 104, pallet 103
With the structure of pedestal 102, shutter 104, pallet 103 and the institute of pedestal 102 in the present embodiment
Shutter 104, pallet 103 and pedestal 102 of the structure used to be shown in Fig. 3 A- Fig. 3 C
Structure be defined.
In actual applications, pallet 103 can use the higher metal of hardness or nonmetallic system
Make, it is preferred to use carborundum makes.
In actual applications, pallet 103 can be made using the material of aluminium alloy etc..
It is preferred that, surface hard anode oxidation processing is carried out to the chip-free region B of pallet 103,
To improve the anti-etching ability in the region, so that when carrying out pre-cleaning processes to chip, can be with
Ensure that the chip-free region B of Ar ion pairs pallet 103 etch rate is relatively low or even hardly
It is etched, and then chip can be avoided to be contaminated.
It should be noted that the structure of support member is not limited to the lower grommet in the present embodiment
105 annular brace portion 107, in actual applications, support member can also be by least three
Dagger is constituted, and is circumferentially positioned at around pedestal 102, and this equally can be in pedestal 102
When leaving process station E, realize and stably support shutter 104.It is preferred that, in shutter
104 bottom, and it is recessed with being provided with least three at each support column one-to-one corresponding position
Groove, each support column is recessed positioned at each correspondingly when pedestal leaves process station E
In groove, so as to realize stably support shutter 104.
In summary, reaction chamber provided in an embodiment of the present invention, it can be to chip 108
When carrying out depositing operation, it is to avoid metallic film in the chip-free region B depositions of pallet 103.
Meanwhile, when pedestal 102 leaves process station E, by by supports support shutter
104, shutter 104 can be made to be separated with pallet 103, so that next group will carried
When the pallet 103 of chip is transported to pre-cleaning cavity progress prerinse, due to the nothing of pallet 103
Metallic film is not present in wafer area B, and wafer surface can be avoided to be contaminated.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining and set
It is standby, including pre-cleaning cavity and reaction chamber, wherein, pre-cleaning cavity is used to carry out chip
Pre-cleaning processes, to remove the impurity of wafer surface.Reaction chamber is used to complete pre- clear in chip
Wash after technique, technique is carried out to chip.The reaction chamber employs offer of the embodiment of the present invention
Above-mentioned reaction chamber.
In actual applications, above-mentioned reaction chamber can be used for physical vapor deposition chamber progress
Depositing operation or magnetron sputtering chamber carry out sputtering technology.
Semiconductor processing equipment provided in an embodiment of the present invention, it is implemented by using the present invention
The above-mentioned reaction chamber that example is provided, can be avoided when carrying out prerinse to chip, wafer surface
Contaminated problem.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and
The illustrative embodiments of use, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, it can do
Go out all variations and modifications, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of reaction chamber, including pallet and pedestal, the pallet are used to carry multiple crystalline substances
Piece；The pedestal is used to carry the pallet, and the pedestal is liftable, to rise to
Process station carries out technique, or drops to loading position and carry out picking and placeing the operation of the pallet,
Characterized in that, also include shutter and support member, wherein,
The shutter is placed on the pallet when the pedestal is located at the process station,
And be provided with the shutter many on multiple through holes, the multiple through hole and the pallet
Individual chip is corresponded, and the shutter is used for the chip-free region for blocking the pallet；
The support member is used for when the pedestal leaves the process station, supports described hide
Baffle plate, so that the shutter is separated with the pallet.
2. reaction chamber according to claim 1, it is characterised in that the pallet is adopted
Made of carborundum.
3. reaction chamber according to claim 1, it is characterised in that the pallet is adopted
Made of aluminium alloy.
4. reaction chamber according to claim 3, it is characterised in that to the pallet
Carry out surface hard anode oxidation processing.
5. the reaction chamber according to claim 1-4 any one, it is characterised in that
The reaction chamber also includes grommet, the inwall for protecting the reaction chamber；The grommet
Lower end there is annular brace portion, the annular brace portion is used as the support member.
6. reaction chamber according to claim 5, it is characterised in that blocked described
Annular groove is provided with the bottom of plate, and the position corresponding with the annular brace portion, institute
Annular brace portion is stated when the pedestal leaves the process station, positioned at the annular groove
It is interior.
7. the reaction chamber according to claim 1-4 any one, it is characterised in that
The support member includes at least three support columns, and is circumferentially positioned at around the pedestal.
8. reaction chamber according to claim 7, it is characterised in that blocked described
The bottom of plate, and with being provided with least three grooves at each support column one-to-one corresponding position,
Each described support column is when the pedestal leaves the process station, correspondingly positioned at each
In individual groove.
9. a kind of semiconductor processing equipment, including pre-cleaning cavity and reaction chamber, wherein,
The pre-cleaning cavity is used to carry out pre-cleaning processes to chip, to remove the miscellaneous of wafer surface
Matter；The reaction chamber is used for after the chip completes the pre-cleaning processes, to described
Chip carries out technique, it is characterised in that the reaction chamber uses claim 1-8 any one
Described reaction chamber.
10. semiconductor processing equipment according to claim 9, it is characterised in that described
Reaction chamber is used for physical vapor deposition chamber or magnetron sputtering chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610246619.XA CN107304473B (en) | 2016-04-20 | 2016-04-20 | Reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610246619.XA CN107304473B (en) | 2016-04-20 | 2016-04-20 | Reaction chamber and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107304473A true CN107304473A (en) | 2017-10-31 |
| CN107304473B CN107304473B (en) | 2020-08-21 |
Family
ID=60152197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610246619.XA Active CN107304473B (en) | 2016-04-20 | 2016-04-20 | Reaction chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107304473B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108060406A (en) * | 2018-01-29 | 2018-05-22 | 北京北方华创微电子装备有限公司 | Block platen component, semiconductor processing and method |
| CN110828271A (en) * | 2018-08-07 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| TWI772769B (en) * | 2019-03-28 | 2022-08-01 | 日商芝浦機械電子裝置股份有限公司 | Film forming device |
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| CN102714146A (en) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | Shadow ring for modifying wafer edge and bevel deposition |
| US20120256363A1 (en) * | 2005-10-12 | 2012-10-11 | Shogo Okita | Plasma processing apparatus and plasma processing method |
| CN203530421U (en) * | 2013-10-25 | 2014-04-09 | 精曜(苏州)新能源科技有限公司 | Shielding tray for solar cell |
| CN105088167A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device, reaction chamber and semiconductor machining equipment |
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2016
- 2016-04-20 CN CN201610246619.XA patent/CN107304473B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120256363A1 (en) * | 2005-10-12 | 2012-10-11 | Shogo Okita | Plasma processing apparatus and plasma processing method |
| CN102714146A (en) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | Shadow ring for modifying wafer edge and bevel deposition |
| CN203530421U (en) * | 2013-10-25 | 2014-04-09 | 精曜(苏州)新能源科技有限公司 | Shielding tray for solar cell |
| CN105088167A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing device, reaction chamber and semiconductor machining equipment |
| CN105088167B (en) * | 2014-05-20 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Bogey, reaction chamber and semiconductor processing equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108060406A (en) * | 2018-01-29 | 2018-05-22 | 北京北方华创微电子装备有限公司 | Block platen component, semiconductor processing and method |
| CN108060406B (en) * | 2018-01-29 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Shielding platen assembly, semiconductor processing apparatus and method |
| CN110828271A (en) * | 2018-08-07 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| TWI772769B (en) * | 2019-03-28 | 2022-08-01 | 日商芝浦機械電子裝置股份有限公司 | Film forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107304473B (en) | 2020-08-21 |
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