CN107300705A - Laser radar range system and distance-finding method based on carrier modulation - Google Patents
Laser radar range system and distance-finding method based on carrier modulation Download PDFInfo
- Publication number
- CN107300705A CN107300705A CN201710435593.8A CN201710435593A CN107300705A CN 107300705 A CN107300705 A CN 107300705A CN 201710435593 A CN201710435593 A CN 201710435593A CN 107300705 A CN107300705 A CN 107300705A
- Authority
- CN
- China
- Prior art keywords
- signal
- circuit
- row
- light source
- primary processor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
- G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
To solve the problem of existing laser radar range system measurement accuracy is low, anti-interference is poor, the invention provides a kind of measurement accuracy height, anti-interference good laser radar range system and distance-finding method based on carrier modulation.Range-measurement system includes control circuit, light source, detection device, optical system；Circuit is controlled to include primary processor and light source driving circuit；Primary processor is connected with light source driving circuit and the detection device；Primary processor is used to export one group of pseudo-random code sequence；The optical signal that light source driving circuit is sent with pseudo-random code sequence to light source carries out low frequency carrier signal modulation；Optical system is projected in detection device after projecting object to be measured, and the echo-signal convergence that object to be measured is reflected for the optical signal for sending light source；Detection device to receive echo-signal sampled, output digit signals after differential amplification, A/D conversion process；Primary processor calculates phase according to the data signal, obtains object range information to be measured.
Description
Technical field
The present invention relates to a kind of laser radar range system and distance-finding method based on carrier modulation.
Background technology
With the development of laser technology, embedded technology and integrated optics, laser ranging just towards digitlization, automation,
Low cost, the direction of miniaturization are developed.Range laser radar has precision high, and system bulk is small, measures rapid advantage, has
It is widely applied prospect.
How accurately target location is obtained during laser radar range, and this has very for improving image resolution ratio
Important effect, especially for the target vehicle constantly moved, because vehicle interior has electromagnetic interference, easily causes measurement not
Enough accurate the problem of.
In addition, traditional mobile lidar detector majority uses single-spot testing mode, it needs to configure mechanical scanning
Device, sweep speed is slow, and image spatial resolution is low.Need to select focal plane array detector to improve sweep speed,
But it is due to that the existing focal plane array detector chip package process overwhelming majority is by detector array and reading circuit array
It is separated into two layers, detector array is placed in chip bottom, its last layer is the A/D converter and amplifying circuit of reading circuit,
Diode will first pass through the line layer of the reading circuit on diode upper strata when receiving optical signal, during due to light projection to line layer
Easily occur light reflection and cause light loss, reduce the light income of diode.
The content of the invention
Based on background above, to solve the problem of existing laser radar range system measurement accuracy is low, anti-interference is poor, this
It is good based on the laser radar range system of carrier modulation and ranging side that invention provides a kind of measurement accuracy height, anti-interference
Method.
The adopted technical solution is that：
A kind of laser radar range system based on carrier modulation, including control circuit, light source, detection device, optical system
System；Circuit is controlled to include primary processor and light source driving circuit；
It is characterized in that：
Primary processor is connected with light source driving circuit and the detection device；Primary processor is used to export one group of pseudorandom
Code sequence；
The optical signal that light source driving circuit is sent with pseudo-random code sequence to light source carries out low frequency carrier signal modulation；
The optical signal that optical system is used to send the light source projects object to be measured, and object to be measured is anti-
Projected after the echo-signal convergence penetrated in the detection device；
The detection device to receive echo-signal is sampled, numeral is exported after differential amplification, A/D conversion process
Signal；
The primary processor calculates phase according to the data signal, obtains object range information to be measured.
Further, above-mentioned detection device includes detector array, signal acquisition process unit, substrate, interconnection metal, gold
Belong to wiring layer, sequential control circuit and the row modeling block for generating row selects signal；
Photoelectricity of the detector array by multiple independent, the correspondence different spaces angle of visual field settings over the substrate
Diode is constituted；
The signal acquisition process unit includes sample circuit and by row differential amplifier circuit, A/D change-over circuits and data
The process circuit that output module is constituted；Data outputting module includes the column selection module for being used to generate column selection signal；
Sample circuit is corresponded with the photodiode, and each sample circuit is negative with corresponding photodiode
Extremely it is connected and is integrated in and is integrally formed a pixel cell；All pixels unit constitutes a pixel unit array；
Pixel unit array and process circuit are integrated over the substrate, and pixel unit array is by interconnecting metal and metal
Wiring layer is connected, and metal wiring layer is connected by data column line with process circuit；
The quantity of row differential amplifier circuit is equal to the columns of pixel unit array, and a row differential amplifier circuit correspondence one is arranged
Pixel cell；The output end of all sample circuits of each row pixel cell is put with the row difference corresponding to the row pixel cell
The input of big circuit is connected；Input of the output end of all row differential amplifier circuits with the A/D change-over circuits is connected；
The output end of A/D change-over circuits is connected with the input of the data outputting module；A/D change-over circuits are used for will row
The voltage difference si of differential amplifier circuit output is converted to data signal；Sequential control circuit is used to control the row modeling block
With column selection module work；Data outputting module, which is used to export, passes through photoelectricity determined by the row modeling block and column selection module
Being used for corresponding to diode calculates the data signal of phase.
Further, above-mentioned sample circuit includes NMOS tube NM7, switchs S1, S2, S3, S4, S5, S6, electric capacity C1, C2；Open
Close S1~S4 to constitute by a NMOS tube and a PMOS docking, switch S5~S6 is constituted by a PMOS；Switch
S1~S4 NMOS tube is designated as NM1, NM2, NM3 and NM4 respectively, and switch S1~S4 PMOS is designated as PM1, PM2, PM3 respectively
And PM4, switch S5~S6 PMOS be designated as PM5 and PM6 respectively；
The source electrode that NM7 grid meets clamp voltage Vb, NM7 connects the negative pole end of photodiode, NM7 drain electrode simultaneously with
NM1, NM2 drain electrode and PM1, PM2 drain electrode are connected；NM1 and PM1 source electrode meets electric capacity C1 one end, NM2 and PM2 simultaneously
Source electrode connect electric capacity C2 one end simultaneously；Electric capacity C1 and electric capacity the C2 other end are grounded respectively；
NM1 and PM1 source electrode also connects PM5, PM3 and NM3 drain electrode simultaneously；NM1 and PM1 grid connects control signal respectively
Vs1 and Vs2；PM5 source electrode meets reset power Vdd；PM5 grid meets resetting voltage Vrst；PM3 and NM3 source electrode connects work
For one of output end vo ut1 of sample circuit；PM3 and NM3 grid meets control signal Vs3 and Vs4 respectively；
NM2 and PM2 source electrode also connects PM6, PM4 and NM4 drain electrode simultaneously；NM2 and PM2 grid connects control signal respectively
Vs2 and Vs1；PM6 source electrode meets reset power Vdd；PM6 grid meets resetting voltage Vrst；PM4 and NM4 source electrode connects work
For another output end vo ut2 of sample circuit；PM4 and NM4 grid meets control signal Vs3 and Vs4 respectively；
Control signal Vs1 is that pseudo-random code sequence all the way of the feeding signal acquisition process unit that is sent by primary processor
The modulated signal that code is sent, control signal Vs2 is negated by the modulated signal and obtained；
Output end vo ut1 and Vout2 connect two inputs of row differential amplifier circuit respectively.
Further, above-mentioned A/D change-over circuits include ramp generating circuit and multiple comparators, and the quantity of comparator is equal to
The columns of pixel unit array, a comparator one row pixel cell of correspondence；The waveform signal output end of ramp generating circuit with
One of input of each comparator is connected, the voltage signal that all sample circuits of each row pixel cell are exported
Another input of the comparator corresponding to the row pixel cell, all ratios are sent into by corresponding row differential amplifier circuit
Output end compared with device connects the input of data outputting module；
Ramp generating circuit includes load resistance R, integrating capacitor C and operational amplifier；A load resistance R termination voltage
Vin1, load resistance the R other end connect the reverse input end of operational amplifier and integrating capacitor C one end, integrating capacitor C simultaneously
Another termination operational amplifier output end Vramp, integrating capacitor C two ends are also parallel with reset switch RST, operation amplifier
The input termination voltage Vin2 in the same direction of device；Voltage Vin1, Vin2 are used to control the ramp signal produced by ramp generating circuit, its
The bleeder circuit of middle voltage Vin1, Vin2 in detection device is produced；
Data outputting module also includes Nbit counters, output buffer module and multiple memories；Multiple memories it is defeated
Enter end respectively with the output end one-to-one corresponding of the multiple comparator to be connected, Nbit counters and the column selection module are sent respectively
Control signal gives the control end of the multiple memory, the data output end of the multiple memory by data/address bus with it is defeated
The input for going out buffer module is connected, and the data signal for calculating phase is exported by the output end of output buffer module.
Further, the bottom of above-mentioned substrate is provided with the microlens array being made up of multiple Fresnel Lenses；It is each luxuriant and rich with fragrance
Nie Er lens one pixel cell of correspondence, for transmiting echo-signal light and making echo-signal light converge to respective pixel unit
On photodiode.
Further, the modulating frequency of above-mentioned low frequency carrier signal<500MHz.
Further, above-mentioned primary processor be DSP, FPGA programmable gate arrays, special ASIC,
GPU or CPU；The light source is area source, LED/light source or LD light sources.
Invention also provides a kind of method that ranging is carried out using above-mentioned laser radar range system, including following step
Suddenly：
1) primary processor produces one group of pseudo-random code sequence；
2) low frequency carrier signal modulation is carried out to the optical signal of light source output with pseudo-random code sequence；
3) optical signal after modulation is projected on object to be measured；
4) each pixel cell of detection device receives the echo-signal of object reflection to be measured respectively, and it is adopted
Sample, differential amplification, A/D conversion process obtain data signal；
5) primary processor calculates phase according to the data signal, obtains the range information of object to be measured.
Further, above-mentioned steps 2) be specially：The pseudo-random code sequence of primary processor output passes to light source driving electricity
Road, light source driving circuit is modulated by electric current, the pseudo noise code that the intensity of light source is produced with primary processor is synchronously changed.
The present invention has advantages below compared with prior art：
1st, the present invention carries out carrier modulation using low frequency pseudo-random code sequence to light signal, improves the measurement essence of system
Degree and antijamming capability.
2nd, the detection device that uses of the present invention is detector array, it is to avoid range-measurement system to mechanical scanner according to
Rely, while improving the reliability of system.
3rd, the present invention carries out face battle array detection to echo-signal using detector array, and detector array is by multiple independent light
Electric diode is constituted, and each photodiode and coupled sample circuit constitute a pixel cell, each pixel cell
To that should have complete reading circuit, during work, each pixel cell carries out data conversion simultaneously, relative to the detection of traditional single-point
Mode, drastically increase the sweep speed of range-measurement system.
4th, each photodiode of detector array is by the different spatial field of view angle of camera lens correspondence, and image space is differentiated
Rate is high.
5th, each photodiode and sample circuit in detector array are integrated in one, place of the circuit simply to signal
Reason is realized in the chip of a small size.
6th, detection device is designed using back-illuminated type, and its metal wiring layer is arranged on the bottom of photodiode, the pole of photoelectricity two
Pipe can be contacted directly with transparent surface, reduce the loss of intermediate link light, and be effectively reduced chip thickness.
7th, the substrate bottom of detection device is provided with microlens array, and one lenticule of each photodiode correspondence more has
Effect converges in echo-signal light on corresponding photodiode, reduces light interference unnecessary between photodiode.
Brief description of the drawings
Fig. 1 is the principle schematic diagram of range-measurement system of the present invention；
Fig. 2 is the schematic block circuit diagram of the signal acquisition process unit of the present invention；
Fig. 3 is the overall structure diagram of the detection device of the present invention；
Fig. 4 is the composition structural representation of the detection device of the present invention；
Fig. 5 is the side cutaway view of the detection device of the present invention；
Fig. 6 is detection device and its output interface overall system architecture schematic diagram of the invention；
Fig. 7 is the pixel output wiring diagram of the detection device shown in Fig. 6；
Fig. 8 is the overall theory diagram of the detection device of the present invention；
Fig. 9 is ramp generating circuit schematic diagram in Fig. 8；
Figure 10 is sample circuit schematic diagram in Fig. 8；
Figure 11 is the one-dimensional row gating module schematic diagram of the detection device of the present invention；
Figure 12 is the two-dimentional row/column gating module schematic diagram of the detection device of the present invention；
Figure 13 is the SECO figure of the detection device of the present invention；
Figure 14 enables gating switch logical schematic for the addressed row of the detection device of the present invention；
Figure 15 enables gating switch logical schematic for the addressed column of the detection device of the present invention.
Description of reference numerals：
1- controls circuit, 11- primary processors, 12- light source driving circuits, 13- peripheral interface circuits, 2- light sources, 3- detections
Device, 31- signal acquisition process units, 32- detector arrays, 311- sample circuits, 312- process circuits, 3121- row difference
Amplifying circuit, 3122-A/D change-over circuits, 3123- data outputting modules,
301- lenticules, 302- substrates, 303- device active regions (epitaxial layer), 304- metal wiring layers, 305- interconnection gold
Category, 306- pixel unit arrays, 3031- photodiodes, 307- data column lines,
322nd, 324-N types doped layer, 325-P types doped layer, 326- cathode electrodes, 327- anode electrodes, 328-SiO2Every
Absciss layer,
4- optical systems, 5- target objects, 6- peripheral hardwares, 7- rows gating address wire, 8- data/address bus.
Embodiment
Below in conjunction with the accompanying drawings and embodiment elaborates to the present invention.
Referring to Fig. 1-8, laser radar range system provided by the present invention, which mainly includes control circuit 1, light source 2, (can adopt
With area source, LED/light source or LD light sources), optical system 4, be made up of detector array 32 and signal acquisition process unit 31
Detection device 3；
Circuit 1 is controlled mainly to include primary processor 11, light source driving circuit 12 and peripheral interface circuit 13, wherein light source drives
The input of the output termination light source 2 of dynamic circuit 12, the I/O mouths of primary processor 11 connect detection device 3, light source driving circuit respectively
12 and peripheral interface circuit 13；Primary processor 11 can select DSP Digital Signal Processing as the kernel control chip of control circuit
Device selects FPGA programmable gate arrays or special ASIC or GPU or CPU；Peripheral interface circuit 13 can select RS-
422nd, RS-485 or RS-232 interface；
Detector array 32 is used for the echo-signal that receiving optics 4 is returned, and detector array 32 is by multiple independences
Be used for gather the photodiode 3031 of echo-signal light and constitute；Photodiode 3031 is arranged on substrate 302, is distributed in
Device active region (epitaxial layer) 303 between substrate 302 and metal wiring layer 304；
Signal acquisition process unit 31 is used for the output signal for receiving and handling detector array 32, signal acquisition process list
Member 31 is in communication with each other with primary processor 11；Signal acquisition process unit 31 includes sample circuit 311 and by row differential amplifier circuit
3121st, the process circuit 312 that A/D change-over circuits 3122 and data outputting module 3123 are constituted；Sample circuit 311, row difference are put
Big circuit 3121, A/D change-over circuits 3122 and data outputting module 3123 connect successively；Sample circuit 311 is used to complete to picture
The collection of plain signal and charge accumulated, are then exported to row differential amplifier circuit 3121 with two-way voltage signal, row difference are put
The difference signal that big circuit 3121 is obtained is transferred to A/D change-over circuits 3122, by A/D change-over circuits 3122 by analog signalses
The data signal for calculating phase is converted to, the data signal is transferred to primary processor eventually through data outputting module 3123
11；
In detector array 32 negative pole end of each photodiode 3031 be respectively connected with a sample circuit 311 and and its
One pixel cell of the composition that is integrated in one；All pixels unit constitutes a pixel unit array 306；Process circuit 312 is made
For the reading circuit of pixel unit array；
Detection device 3 also includes substrate 302 (material is Si), (the interconnection metal is as contact to realize for interconnection metal 305
The connection of device and Si substrates), metal wiring layer 304, sequential control circuit and the row modeling block for generating row selects signal；Picture
Plain cell array 306, process circuit 312, sequential control circuit and row modeling block are integrated on substrate 302, pixel cell battle array
Row 306 are connected by interconnecting metal 305 with metal wiring layer 304, and metal wiring layer 304 passes through data column line 307 and processing electricity
Road 312 is connected；
Referring to Fig. 4, metal wiring layer 304 is made up of multiple metal line units, and each row metal line unit is right respectively
Ying Yilie pixel cells；Each metal line unit is made up of more metal layers and multilayer dielectricity layer, on every layer of metal level
Tie point is equipped with, multilayer dielectricity layer is separately positioned between adjacent two layers metal level, and dielectric layer is SiO2The insulating barrier of material.
Referring to Fig. 4, the bottom of substrate 302 is additionally provided with the microlens array being integrated in one with substrate 302, microlens array
It is made up of multiple Fresnel Lenses, one pixel cell of each Fresnel Lenses correspondence, for transmiting echo-signal light and making back
Ripple flashlight is converged on the photodiode 3031 of respective pixel unit, is conducive to the pipe of two pole of photoelectricity 306 to absorb optical signal, should
Microlens array effectively increases substrate surface transmissivity.
Referring to Fig. 5, the top of substrate 302, which is set, is provided with SiO2Separation layer 328, in SiO2Separation layer 328 is used for provided with multiple
The hole of embedded cathode electrode 326 and anode electrode 327, cathode electrode 326, which is inlaid at the contact surface in substrate 302, is provided with area
More than the n-type doping layer 324 of the sectional area of cathode electrode 326, it is provided with the contact surface that anode electrode 327 is inlaid into substrate 302
Area is more than the p-type doped layer 325 of the sectional area of anode electrode 327.The bottom of substrate 302 has n-type doping layer 322, lenticule battle array
Row are arranged on the bottom of n-type doping layer 322.
Sample circuit
Referring to Fig. 7 and Fig. 8, sample circuit 311 has multiple, and it is corresponded with photodiode 3031, each photoelectricity two
The negative pole end of pole pipe 3031 is respectively connected with a sample circuit 311 and is integrated in one.
Referring to Figure 10, sample circuit 311 includes NMOS tube NM7, switch S1, S2, S3, S4, S5, S6 and electric capacity C1, C2；Open
Close S1~S4 to constitute by a NMOS tube and a PMOS docking, switch S5~S6 is constituted by a PMOS；Switch
S1~S4 NMOS tube is designated as NM1, NM2, NM3 and NM4 respectively, and switch S1~S4 PMOS is designated as PM1, PM2, PM3 respectively
And PM4, switch S5~S6 PMOS be designated as PM5 and PM6 respectively；
NM7 source electrode connects the negative pole end of photodiode, NM7 drain electrode and PM1, PM2 for draining simultaneously with NM1, NM2
Drain electrode be connected, NM7 grid meets clamp voltage Vb；NM1 and PM1 source electrode connects electric capacity C1 one end simultaneously, NM2 and PM2's
Source electrode connects electric capacity C2 one end simultaneously；Electric capacity C1 and electric capacity the C2 other end are grounded respectively；
NM1 and PM1 source electrode also connects PM5, PM3 and NM3 drain electrode simultaneously；NM1 and PM1 grid connects control signal respectively
Vs1 and Vs2；PM5 source electrode meets reset power Vdd；PM5 grid meets resetting voltage Vrst；PM3 and NM3 source electrode connects work
For one of output end vo ut1 of sample circuit；PM3 and NM3 grid meets control signal Vs3 and Vs4 respectively；
NM2 and PM2 source electrode also connects PM6, PM4 and NM4 drain electrode simultaneously；NM2 and PM2 grid connects control signal respectively
Vs2 and Vs1；PM6 source electrode meets reset power Vdd；PM6 grid meets resetting voltage Vrst；PM4 and NM4 source electrode connects work
For another output end vo ut2 of sample circuit；PM4 and NM4 grid meets control signal Vs3 and Vs4 respectively；
Control signal Vs1 is that pseudo-random code sequence all the way of the feeding signal acquisition process unit that is sent by primary processor
The modulated signal that code is sent, control signal Vs2 is negated by the modulated signal and obtained；
NM7 is clamp circuit, during for voltage change on electric capacity C1, C2, it is to avoid photodiode both end voltage is sent out
Raw big change；
Output end vo ut1 and Vout2 connect two inputs of row differential amplifier circuit 3121 respectively.
The operation principle of sample circuit shown in Figure 10：
The NMOS tube NM7 being connected with photodiode plays clamping action, and Vb is clamp voltage.
Electric capacity C1, C2 are integrating capacitor in pixel, and switch S1, S2 effect are integral processes in control pixel, switch S1
NMOS tube NM1, switch S2 PMOS PM2 control signal Vs1 and switch S1 PMOS PM1, switch S2 NMOS tube
NM2 control signal Vs2 is the control signal of row modeling block output, Vs1 and Vs2 voltages are opposite；Vs1 be set to high Vs2 be set to it is low,
Then S1 closes S2 and disconnected；Vs1 is set to low Vs2 and is set to height, then S1 disconnects S2 closures.
Switch S3, S4 effect be control pixel in integral voltage output, S3, S4 is respectively by a pair of PMOS and NMOS tube pair
Connect and form, the control signal Vs4 for switching S4 PMOS PM4 control signal Vs3 and switch S3 NMOS tube NM3 is row modeling
The row gating signal of block output, Vs3 is set to high Vs4 and set low, and can disconnect S3 and S4, and Vs3 is set to height by Vs4 is set low, can made
S3 and S4 closures.
Switch S5, S6 effect are the resets for controlling electric capacity in pixel, and the Vrst signals of its control end come from row modeling
Block, Vrst is set to height, can disconnect S5 and S6, and Vrst is set low, and can close S5 and S6.
The course of work of sample circuit shown in Figure 10
In Figure 13, upper figure represents signal cycle of certain a line per frame back and forth, and figure below represents that frame in a line signal is specific
Situation of change, unlike signal controls the keying of different switches, with reference to Figure 10 and 13 and switch working condition explanation
The course of work of sample circuit：
Step one：Switch S3, S4, S5 and S6 are disconnected, switch S1 and S2, light are alternately closed according to control signal Vs1 and Vs2
Source is according to modulated signal transmitting modulation light, and control signal Vs1 is identical with modulated signal, control signal Vs2 just with modulated signal
On the contrary, the electric charge that echo is produced is stored in electric capacity C1 and electric capacity C2.
Step 2：Switch S1 and S2 is disconnected, S5 and S6 still remain off, by row selects signal closure switch S3 and
S4, electric capacity C1 and C2 voltage are transported on two alignments Vout1 and Vout2, is transferred in row differential amplifier circuit, obtains
The difference of voltage on electric capacity C1 and C2, then voltage difference si is transferred in A/D change-over circuits, convert analog signals into numeral
Signal, is transferred to outside detection device eventually through data outputting module.
In this step, electric capacity C1 voltage is A1∫ m (t) m (t-Td) dt, electric capacity C2 voltage is A1∫[1-m(t)]m
(t-Td) dt, A is exported after differential amplifier circuit is handled2∫ [2m (t) -1] m (t-Td) dt=A3·(Tc-Td)；Its
In, A1、A2And A3It is coefficient, and is definite value in the case where the time is approximately constant.
Step 3：After the end of transmission, closure switch S5, S6 disconnect switch S3, S4, and switch S1, S2 are still within disconnecting shape
State, complete paired data alignment and electric capacity C1 and C2 are resetted.
Step 4：Switch S3, S4, S5 and S6 are disconnected, switch S1 and S2, light are alternately closed according to control signal Vs1 and Vs2
Source postpones a chip lengths according to modulated signal transmitting modulation light, control signal Vs1 than modulated signal, and control signal Vs2 is just
Good and control signal Vs1 is on the contrary, the electric charge that echo-signal is produced is stored in electric capacity C1, C2.
Step 5：Switch S1 and S2 is disconnected, S5 and S6 are remained off, and pass through row selects signal closure switch S3
And S4, electric capacity C1 and C2 voltage are transported on two output end vos ut1 and Vout2, are transferred in row differential amplifier circuit
The difference of the upper voltage of electric capacity C1, C2 is obtained, then voltage difference si is transferred in A/D change-over circuits, analog signal is changed
For data signal, it is transferred to eventually through data outputting module outside detection device, after the end of transmission, closure switch S5 and S6,
Electric capacity in pixel cell is resetted.
In this step, electric capacity C1 voltage is A1∫ m (t-Tc) m (t-Td) dt, electric capacity C2 voltage is A1∫[1-m(t-
Tc)] m (t-Td) dt, A is exported after differential amplifier circuit is handled2∫ [2m (t-Tc) -1] m (t-Td) dt=A3·Td。
Step 6：Closure switch S1, S2, S5, S6, disconnect switch S3, S4, photodiode and electric capacity C1, C2 are entered
Row resets.
Step 2 and two data (A of step 5 output3And A (Tc-Td)3Td) it is used to send into primary processor
Row calculates to obtain range information.
It is related to m in C1 and C2 magnitude of voltage, parameter in above-mentioned steps two and step 5 and refers to m-sequence, Tc refers to one
The time span of the time of small-pulse effect, i.e. chip；Td is the time delay returned.
Row differential amplifier circuit
Referring to Fig. 8, the quantity of row differential amplifier circuit 3121 is equal to the columns of pixel unit array, a row differential amplification
Circuit one row pixel cell of correspondence；The output end of all sample circuits of each row pixel cell is right with the row pixel cell institute
The input for the row differential amplifier circuit answered is connected；The output end of all row differential amplifier circuits with A/D change-over circuits 3122
Input be connected.
A/D change-over circuits
Referring to Fig. 8, A/D change-over circuits 3122 include ramp generating circuit and multiple comparators, and the quantity of comparator is equal to
The columns of photodiode 3031, a comparator one row photodiode of correspondence；The waveform signal output of ramp generating circuit
End is connected with one of input of each comparator, the row differential amplification electricity corresponding to each row photodiode 3031
The output end on road 312 is connected with another input of each comparator, and the output end of all comparators connects data output
The input of module.
Referring to Fig. 9, ramp generating circuit includes load resistance R, integrating capacitor C and operational amplifier；The one of load resistance R
Termination voltage Vin1, load resistance the R other end connect the reverse input end of operational amplifier and integrating capacitor C one end simultaneously,
The output end Vramp of integrating capacitor C another termination operational amplifier, integrating capacitor C two ends are also parallel with reset switch
RST, the input termination voltage Vin2 in the same direction of operational amplifier；Voltage Vin1, Vin2 are used for produced by controlling ramp generating circuit
Ramp signal, bleeder circuits of wherein voltage Vin1, the Vin2 in detection device produce.
Data outputting module
Data outputting module 3123 includes Nbit counters, column selection module, output buffer module and multiple memories；It is multiple
The input of memory is corresponded with the output end of multiple comparators in A/D change-over circuits 3122 to be connected, Nbit counters
Control end of the control signal to all memories is sent respectively with column selection module, and the data output end of all memories passes through number
It is connected according to bus with exporting the input of buffer module, the data signal for calculating phase is exported by output buffer module.
Sequential control circuit
Sequential control circuit is used to control the column selection module work in row modeling block and the data outputting module in detection device
Make, sequential control circuit can use existing module.
As shown in figure 14, the row modeling block of detection device enters row decoding by the output to linage-counter, can be gone
Signal is selected, cycle phase of the enable time respectively with row clock signal is same；Wherein Row_clk is row clock signal, 1 in Figure 14,2 points
Biao Shi not row gating switch control signal, Q<1>To Q<n>The output data of 1bit counters, NQ are represented respectively<1>To NQ<n>
Represent the output data of Nbit counters.
As shown in figure 15, the column selection module of detection device enters row decoding by the output to column counter, can be arranged
Signal is selected, cycle phase of the enable time respectively with column clock signal is same；Wherein Col_clk is column clock signal, 1 in Figure 15,2 points
Biao Shi not row gating switch control signal, Q<1>To Q<n>The output data of 1bit counters, NQ are represented respectively<1>To NQ<n>
Represent the output data of Nbit counters.
The operation principle of detection device 3：
As shown in fig. 7, each pixel cell is respectively provided with the row gating address wire being connected with row modeling block, row gating address
Line is connected to control respectively the switch S1-S6 and reset power Vdd of the sample circuit of each pixel cell, wherein switching S1
With S2 by Vs1 and Vs2 to signal, S3 and S4 is switched by Vs3 and Vs4 to signal, wherein switch S5, S6 and reset power Vdd are
By Vrst to signal；Each row pixel cell shares two single data alignments 307, and the output end of data column line 307 is sequentially connected row
Differential amplifier circuit, A/D change-over circuits and data outputting module；As shown in figure 8, after the integration of sample circuit 311 terminates, A/D turns
The ramp generating circuit changed in circuit is started working, and the row selects signal provided by row modeling block is selected certain one-row pixels unit
The data read-out of interior sample circuit；
The output of the differential signal and ramp generating circuit of the corresponding row differential amplifier circuit output of each row pixel cell
Signal is respectively fed to two inputs of the comparator corresponding to each row pixel cell, after the output end upset of comparator,
The count value of current Nbit counters is left in the corresponding memory of the comparator；
After ramp generating circuit work cut-off, the column selection signal provided by the column selection module in data outputting module, control
Data in memory processed are successively read on data/address bus, then by the output buffer module in data outputting module by number
According to reading into outside detection device.
The operation principle and process of range-measurement system：
Primary processor 11 exports two-way pseudo-random code sequence：The light source of light source 2 is believed by light source driving circuit 12 all the way
Number carry out low frequency (modulating frequency<500MHz) carrier modulation obtains a modulated signal；Signal acquisition process unit 31 is sent into all the way
Keying for controlling the switch S1 in sample circuit 311；
The transmitting terminal of light source 2 is by optical system 4 by the light projection transmitted away to target object 5, and it is situated between in air
In the transmitting procedure of matter, the echo letter that the optical signal after effect reflect through target object 5 such as absorbed, scattered by atmospheric medium
Projected number again after the convergence of optical system 4 on detector array 32, signal acquisition process unit 31 is to detector array 32
The echo-signal of absorption is acquired, differential amplification is handled, A/D is converted to digital quantity signal；Primary processor is to the numeral
Amount signal obtained after calculating processing the range information of object to be measured.Obtain range information circular be：Will
A3And A (Tc-Td)3Td makees ratio in FPGA, obtainsIt is i.e. available in the case of known Tc
Td；And due toFor the distance of object to be measured to detector array, c is the light velocity, can be obtained apart from D.
Claims (9)
1. a kind of laser radar range system based on carrier modulation, including control circuit, light source, detection device, optical system；
Circuit is controlled to include primary processor and light source driving circuit；
It is characterized in that：
Primary processor is connected with light source driving circuit and the detection device；Primary processor is used to export one group of pseudo noise code sequence
Row；
The optical signal that light source driving circuit is sent with pseudo-random code sequence to light source carries out low frequency carrier signal modulation；
Optical system is used for the optical signal that sends the light source and projects object to be measured, and object to be measured is reflected
Projected after echo-signal convergence in the detection device；
The detection device to receive echo-signal is sampled, numeral letter is exported after differential amplification, A/D conversion process
Number；
The primary processor calculates phase according to the data signal, obtains object range information to be measured.
2. the laser radar range system according to claim 1 based on carrier modulation, it is characterised in that：The detection dress
Put including detector array, signal acquisition process unit, substrate, interconnection metal, metal wiring layer, sequential control circuit and be used for
Generate the row modeling block of row selects signal；
Photoelectricity two pole of the detector array by multiple independent, the correspondence different spaces angle of visual field settings over the substrate
Pipe is constituted；
The signal acquisition process unit includes sample circuit and by row differential amplifier circuit, A/D change-over circuits and data output
The process circuit of module composition；Data outputting module includes the column selection module for being used to generate column selection signal；
Sample circuit and the photodiode are corresponded, the negative pole end of each sample circuit and corresponding photodiode
It is connected and is integrated in and is integrally formed a pixel cell；All pixels unit constitutes a pixel unit array；
Pixel unit array and process circuit are integrated over the substrate, and pixel unit array is by interconnecting metal and metal line
Layer is connected, and metal wiring layer is connected by data column line with process circuit；
The quantity of row differential amplifier circuit is equal to the columns of pixel unit array, a row differential amplifier circuit one row pixel of correspondence
Unit；The output end of all sample circuits of each row pixel cell with corresponding to the row pixel cell row differential amplification electricity
The input on road is connected；Input of the output end of all row differential amplifier circuits with the A/D change-over circuits is connected；
The output end of A/D change-over circuits is connected with the input of the data outputting module；A/D change-over circuits are used for row difference
The voltage difference si of amplifying circuit output is converted to data signal；Sequential control circuit is used to control the row modeling block and institute
State the work of column selection module；Data outputting module, which is used to export, passes through the pole of photoelectricity two determined by the row modeling block and column selection module
The corresponding data signal for being used to calculate phase of pipe.
3. the laser radar range system according to claim 2 based on carrier modulation, it is characterised in that：The sampling electricity
Road includes NMOS tube NM7, switchs S1, S2, S3, S4, S5, S6, electric capacity C1, C2；S1~S4 is switched by a NMOS tube and one
Individual PMOS docking is constituted, and switch S5~S6 is constituted by a PMOS；Switch S1~S4 NMOS tube be designated as respectively NM1,
NM2, NM3 and NM4, switch S1~S4 PMOS are designated as PM1, PM2, PM3 and PM4, switch S5~S6 PMOS point respectively
PM5 and PM6 are not designated as it；
The source electrode that NM7 grid meets clamp voltage Vb, NM7 connects the negative pole end of photodiode, NM7 drain electrode simultaneously with NM1,
NM2 drain electrode and PM1, PM2 drain electrode are connected；NM1 and PM1 source electrode connects the source of electric capacity C1 one end, NM2 and PM2 simultaneously
Pole connects electric capacity C2 one end simultaneously；Electric capacity C1 and electric capacity the C2 other end are grounded respectively；
NM1 and PM1 source electrode also connects PM5, PM3 and NM3 drain electrode simultaneously；NM1 and PM1 grid meets control signal Vs1 respectively
And Vs2；PM5 source electrode meets reset power Vdd；PM5 grid meets resetting voltage Vrst；PM3 and NM3 source electrode connects as adopting
One of output end vo ut1 of sample circuit；PM3 and NM3 grid meets control signal Vs3 and Vs4 respectively；
NM2 and PM2 source electrode also connects PM6, PM4 and NM4 drain electrode simultaneously；NM2 and PM2 grid meets control signal Vs2 respectively
And Vs1；PM6 source electrode meets reset power Vdd；PM6 grid meets resetting voltage Vrst；PM4 and NM4 source electrode connects as adopting
Another output end vo ut2 of sample circuit；PM4 and NM4 grid meets control signal Vs3 and Vs4 respectively；
Control signal Vs1 is that pseudo-random code sequence code institute all the way of the feeding signal acquisition process unit that is sent by primary processor
The modulated signal sent, control signal Vs2 is negated by the modulated signal and obtained；
Output end vo ut1 and Vout2 connect two inputs of row differential amplifier circuit respectively.
4. the laser radar range system according to claim 3 based on carrier modulation, it is characterised in that：A/D conversion electricity
Road includes ramp generating circuit and multiple comparators, and the quantity of comparator is equal to the columns of pixel unit array, a comparator
One row pixel cell of correspondence；The waveform signal output end of ramp generating circuit and one of input of each comparator are homogeneous
Even, the voltage signal that all sample circuits of each row pixel cell are exported is sent into by corresponding row differential amplifier circuit
Another input of comparator corresponding to the row pixel cell, the output end of all comparators connects data outputting module
Input；
Ramp generating circuit includes load resistance R, integrating capacitor C and operational amplifier；A load resistance R termination voltage
Vin1, load resistance the R other end connect the reverse input end of operational amplifier and integrating capacitor C one end, integrating capacitor C simultaneously
Another termination operational amplifier output end Vramp, integrating capacitor C two ends are also parallel with reset switch RST, operation amplifier
The input termination voltage Vin2 in the same direction of device；Voltage Vin1, Vin2 are used to control the ramp signal produced by ramp generating circuit, its
The bleeder circuit of middle voltage Vin1, Vin2 in detection device is produced；
Data outputting module also includes Nbit counters, output buffer module and multiple memories；The input of multiple memories
Correspond and be connected with the output end of the multiple comparator respectively, Nbit counters and the column selection module send control respectively
Signal gives the control end of the multiple memory, and the data output end of the multiple memory is slow with output by data/address bus
The input of die block is connected, and the data signal for calculating phase is exported by the output end of output buffer module.
5. according to any described laser radar range system based on carrier modulation of claim 2 to 4, it is characterised in that：Institute
The bottom for stating substrate is provided with the microlens array being made up of multiple Fresnel Lenses；One pixel of each Fresnel Lenses correspondence
Unit, for transmiting echo-signal light and making echo-signal light converge to the photodiode of respective pixel unit.
6. according to any described laser radar range system based on carrier modulation of Claims 1-4, it is characterised in that：Institute
State the modulating frequency of low frequency carrier signal<500MHz.
7. according to any described laser radar range system based on carrier modulation of Claims 1-4, it is characterised in that：Institute
Primary processor is stated for DSP, FPGA programmable gate arrays, special ASIC, GPU or CPU；The light source is
Area source, LED/light source or LD light sources.
8. the method for carrying out ranging using any described laser radar range system of claim 1 to 7, it is characterised in that bag
Include following steps：
1) primary processor produces one group of pseudo-random code sequence；
2) low frequency carrier signal modulation is carried out to the optical signal of light source output with pseudo-random code sequence；
3) optical signal after modulation is projected on object to be measured；
4) each pixel cell of detection device receives the echo-signal of object to be measured reflection respectively, and it is sampled, it is poor
Amplification, A/D conversion process is divided to obtain data signal；
5) primary processor calculates phase according to the data signal, obtains the range information of object to be measured.
9. method according to claim 8, it is characterised in that the step 2) be specially：Primary processor output it is pseudo- with
Machine code sequence passes to light source driving circuit, and light source driving circuit is modulated by electric current, makes the intensity of light source with main process task
The pseudo noise code that device is produced synchronously changes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710435593.8A CN107300705B (en) | 2017-06-11 | 2017-06-11 | Laser radar ranging system and method based on carrier modulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710435593.8A CN107300705B (en) | 2017-06-11 | 2017-06-11 | Laser radar ranging system and method based on carrier modulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107300705A true CN107300705A (en) | 2017-10-27 |
| CN107300705B CN107300705B (en) | 2020-04-03 |
Family
ID=60134804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710435593.8A Active CN107300705B (en) | 2017-06-11 | 2017-06-11 | Laser radar ranging system and method based on carrier modulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107300705B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108519604A (en) * | 2018-03-08 | 2018-09-11 | 北京理工大学 | A kind of solid-state face battle array laser radar range method based on pscudo-random codc modulation demodulation |
| CN109884654A (en) * | 2019-03-14 | 2019-06-14 | 清华大学 | Laser ranging system and method based on band spectrum modulation |
| CN110192121A (en) * | 2017-12-22 | 2019-08-30 | 索尼半导体解决方案公司 | Signal generating apparatus |
| WO2019205164A1 (en) * | 2018-04-28 | 2019-10-31 | SZ DJI Technology Co., Ltd. | Light detection and ranging sensors with optics and solid-state detectors, and associated systems and methods |
| CN111123276A (en) * | 2019-12-27 | 2020-05-08 | 宁波飞芯电子科技有限公司 | Coherent detection device and method |
| WO2020142948A1 (en) * | 2019-01-09 | 2020-07-16 | 深圳市大疆创新科技有限公司 | Laser radar device, application-specific integrated circuit, and ranging apparatus |
| WO2020233415A1 (en) * | 2019-05-17 | 2020-11-26 | 深圳市速腾聚创科技有限公司 | Laser radar, and anti-jamming method therefor |
| CN113167870A (en) * | 2020-04-03 | 2021-07-23 | 深圳市速腾聚创科技有限公司 | Laser receiving and transmitting system, laser radar and automatic driving equipment |
| WO2021179583A1 (en) * | 2020-03-10 | 2021-09-16 | 宁波飞芯电子科技有限公司 | Detection method and detection device |
| CN113746565A (en) * | 2021-09-08 | 2021-12-03 | 西安应用光学研究所 | Laser echo signal receiving device and method for linear array anti-sniper detection system |
| WO2024065359A1 (en) * | 2022-09-29 | 2024-04-04 | Intel Corporation | Orthogonal phase modulation lidar |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090146197A1 (en) * | 2007-12-10 | 2009-06-11 | Electronics And Telecommunications Research Institute | Photo-detector array device with roic monolithically integrated for laser-radar image signal and manufacturing method thereof |
| CN101943606A (en) * | 2010-08-20 | 2011-01-12 | 电子科技大学 | Infrared focal plane reading circuit and method thereof |
| CN102928832A (en) * | 2012-11-30 | 2013-02-13 | 中国科学院上海光学精密机械研究所 | Remote laser distance measuring system based on high-speed pseudo-random code modulation and photon counting |
| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN105738913A (en) * | 2016-03-30 | 2016-07-06 | 中国科学院上海光学精密机械研究所 | Distance measurement-communication integrated laser radar |
-
2017
- 2017-06-11 CN CN201710435593.8A patent/CN107300705B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090146197A1 (en) * | 2007-12-10 | 2009-06-11 | Electronics And Telecommunications Research Institute | Photo-detector array device with roic monolithically integrated for laser-radar image signal and manufacturing method thereof |
| CN101943606A (en) * | 2010-08-20 | 2011-01-12 | 电子科技大学 | Infrared focal plane reading circuit and method thereof |
| CN102928832A (en) * | 2012-11-30 | 2013-02-13 | 中国科学院上海光学精密机械研究所 | Remote laser distance measuring system based on high-speed pseudo-random code modulation and photon counting |
| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN105738913A (en) * | 2016-03-30 | 2016-07-06 | 中国科学院上海光学精密机械研究所 | Distance measurement-communication integrated laser radar |
Non-Patent Citations (2)
| Title |
|---|
| 徐恒: ""高速伪随机码调制激光测距雷达电子学***设计"", 《中国优秀硕士学问论文全文数据库信息科技辑》 * |
| 曾义芳: "《DSP开发应用技术》", 31 January 2008, 北京航空航天大学出版社 * |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110192121A (en) * | 2017-12-22 | 2019-08-30 | 索尼半导体解决方案公司 | Signal generating apparatus |
| CN108519604B (en) * | 2018-03-08 | 2021-08-10 | 北京理工大学 | Solid-state area array laser radar ranging method based on pseudo-random code modulation and demodulation |
| CN108519604A (en) * | 2018-03-08 | 2018-09-11 | 北京理工大学 | A kind of solid-state face battle array laser radar range method based on pscudo-random codc modulation demodulation |
| WO2019205164A1 (en) * | 2018-04-28 | 2019-10-31 | SZ DJI Technology Co., Ltd. | Light detection and ranging sensors with optics and solid-state detectors, and associated systems and methods |
| CN112020662A (en) * | 2018-04-28 | 2020-12-01 | 深圳市大疆创新科技有限公司 | Light detection and ranging sensor with optics and solid state detector and associated systems and methods |
| CN111758049A (en) * | 2019-01-09 | 2020-10-09 | 深圳市大疆创新科技有限公司 | Laser radar equipment, special integrated circuit and distance measuring device |
| WO2020142948A1 (en) * | 2019-01-09 | 2020-07-16 | 深圳市大疆创新科技有限公司 | Laser radar device, application-specific integrated circuit, and ranging apparatus |
| CN109884654B (en) * | 2019-03-14 | 2020-10-16 | 清华大学 | Laser ranging system and method based on spread spectrum modulation |
| WO2020182217A1 (en) * | 2019-03-14 | 2020-09-17 | 清华大学 | Spread spectrum modulation-based laser ranging system and method |
| CN109884654A (en) * | 2019-03-14 | 2019-06-14 | 清华大学 | Laser ranging system and method based on band spectrum modulation |
| WO2020233415A1 (en) * | 2019-05-17 | 2020-11-26 | 深圳市速腾聚创科技有限公司 | Laser radar, and anti-jamming method therefor |
| CN111123276A (en) * | 2019-12-27 | 2020-05-08 | 宁波飞芯电子科技有限公司 | Coherent detection device and method |
| WO2021179583A1 (en) * | 2020-03-10 | 2021-09-16 | 宁波飞芯电子科技有限公司 | Detection method and detection device |
| CN113167870A (en) * | 2020-04-03 | 2021-07-23 | 深圳市速腾聚创科技有限公司 | Laser receiving and transmitting system, laser radar and automatic driving equipment |
| WO2021196192A1 (en) * | 2020-04-03 | 2021-10-07 | 深圳市速腾聚创科技有限公司 | Laser transmission and reception system, lidar and self-driving device |
| CN113167870B (en) * | 2020-04-03 | 2023-11-24 | 深圳市速腾聚创科技有限公司 | Laser receiving and transmitting system, laser radar and automatic driving equipment |
| CN113746565A (en) * | 2021-09-08 | 2021-12-03 | 西安应用光学研究所 | Laser echo signal receiving device and method for linear array anti-sniper detection system |
| WO2024065359A1 (en) * | 2022-09-29 | 2024-04-04 | Intel Corporation | Orthogonal phase modulation lidar |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107300705B (en) | 2020-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107300705A (en) | Laser radar range system and distance-finding method based on carrier modulation | |
| CN107247269A (en) | For the detection device of acquisition process laser signal, pixel cell and array | |
| CN107340523A (en) | Test the speed range-measurement system and the distance-finding method that tests the speed based on heterodyne detection of laser | |
| CN108566524B (en) | Pixel unit, image sensor chip, imaging system, pixel unit forming method and depth information measuring and calculating method | |
| EP3164683B1 (en) | Photodetection circuit | |
| TWI524762B (en) | Shared time of flight pixel | |
| CN102891969B (en) | Image sensing apparatus and its method of operation | |
| CN113169243A (en) | High quantum efficiency geiger-mode avalanche diode including high sensitivity photon mixing structures and arrays thereof | |
| CN100394606C (en) | Light detection device, imaging device and distant image acquisition device | |
| US8908063B2 (en) | Method and apparatus for a time-of-flight sensor with charge storage | |
| US20190339392A1 (en) | Image sensor with boosted photodiodes for time of flight measurements | |
| CN208028993U (en) | Pixel unit, image sensor chip and imaging system | |
| CN109814083B (en) | Current-assisted photon demodulation pixel unit, back-illuminated image sensor chip, imaging system, forming method and measuring and calculating method | |
| US20090122148A1 (en) | Disjoint light sensing arrangements and methods therefor | |
| Beraldin et al. | Optimized position sensors for flying-spot active triangulation systems | |
| CN107340508A (en) | Focal plane chip, pixel cell and array for acquisition process laser signal | |
| CN110462436A (en) | Solid-state imaging apparatus | |
| EP1668708A1 (en) | Optoelectronic detector with multiple readout nodes and its use thereof | |
| CN111048540A (en) | Gated pixel unit and 3D image sensor | |
| US11671722B2 (en) | Image sensing device | |
| CN210692538U (en) | Pixel unit having dual charge storage structure, image sensor chip having dual charge storage structure, and imaging system | |
| US11722792B2 (en) | Image sensing device | |
| WO2022001645A1 (en) | Image sensor and detection system using same | |
| US20230118540A1 (en) | Image sensing device | |
| CN217307781U (en) | Time-of-flight image sensor pixel circuit and image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 315500 Room 2212, 389 Yuelindong Road, Fenghua District, Ningbo City, Zhejiang Province Applicant after: XI'AN ABAX SENSING Co.,Ltd. Address before: 710119 No. 60 West Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Applicant before: Xi'an flying arrow Electronic Technology Co., Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |